CN101582467A - Method for grooving and grid burying of crystalline silicon solar cell - Google Patents
Method for grooving and grid burying of crystalline silicon solar cell Download PDFInfo
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- CN101582467A CN101582467A CNA2009100297106A CN200910029710A CN101582467A CN 101582467 A CN101582467 A CN 101582467A CN A2009100297106 A CNA2009100297106 A CN A2009100297106A CN 200910029710 A CN200910029710 A CN 200910029710A CN 101582467 A CN101582467 A CN 101582467A
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- silicon chip
- grooving
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- silicon nitride
- cutting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a method for grooving and grid burying of a crystalline silicon solar cell, which comprises the following steps: depositing a layer of silicon nitride mask layer on the front of a silicon chip; printing silicon nitride etching slurry on an electrode position of the silicon chip needing grooving, drying the etching slurry, and eating off the silicon nitride film corresponding to the position; putting the eroded silicon chip into a container holing aqueous alkali for grooving, namely generating chemical reaction between the aqueous alkali and the position of the silicon chip needing the grooving to remove products so as to achieve the aim of completing the grooving of the silicon chip; and washing the grooved silicon chip with deionized water, and drying the silicon chip to complete the grooving. The method for grooving cannot cause damage to and defects of the silicon chip so as to have low fragment percent, has convenient operation and can simultaneously perform the grooving on a large scale so as to have high yield, has large-range groove height and groove width to make screen painting or self aligned plating in the following electrode manufacturing become possible, and has simple equipment and low cost.
Description
Technical field
The present invention relates to a kind of method of grooving and grid burying of crystalline silicon solar cell.
Background technology
Photovoltaic generation is a very important field during solar energy utilizes, and the efficient of the existing monocrystalline volume production of domestic major part is sought new technology at 17%-18%, new material, and new technology improves battery conversion efficiency, and reducing cost is a current very urgent task.Grooving and grid burying electrode single crystal silicon solar cell is because of the unique texture of its buried gate electrode, and cell production process has been saved complicated photoetching, and the entire cell manufacture craft is simplified greatly; Burying grid and not only reduced the electrode shaded area, also can reduce ohmic contact resistance, is a kind of high-efficiency battery technology that realizes industrialization.
The method of present existing grooving and grid burying has two kinds, mechanical carving groove and laser grooving.Mechanical carving groove is to adopt diamond cutter to depict groove, and its advantage is: the groove depth-width ratio that carves is big, does not have the problem of carving of laterally crossing substantially.Shortcoming is: the cutting meeting brings damage to silicon chip, causes defective, influences battery sheet efficient; Fragmentation rate height; Can only the monolithic cutting, can not batch machining, yield poorly; Must clean again after the cutting and remove damage; Accuracy of machines requires high, the cost height, and the domestic equipment that carries out this type of processing must rely on import at present.Laser grooving is to move cutting by laser at silicon chip surface, reconciles laser power and time and controls groove depth, and its advantage is: the groove depth-width ratio that carves is big, does not have the problem of carving of laterally crossing substantially.Shortcoming is: the cutting meeting brings damage to silicon chip, causes defective, influences battery sheet efficient; Can only the monolithic cutting, speed is slow, can not batch machining, yield poorly; Must clean again after the cutting and remove damage; Laser precision is required height, and equipment is more expensive.
Summary of the invention
The technical problem to be solved in the present invention is: causes silicon chip damage easily in order to overcome mechanical carving groove and laser grooving, causes defective, and yield poorly, and the equipment requirements height, problems such as cost height provide a kind of method of grooving and grid burying of crystalline silicon solar cell.
The technical solution adopted for the present invention to solve the technical problems is: a kind of method of grooving and grid burying of crystalline silicon solar cell is characterized in that having following steps: at the front of silicon chip deposition one deck silicon nitride mask layer; The silicon nitride etch slurry is printed on the electrode area of required cutting on the silicon chip, and the oven dry etching slurry erodes the electrode area silicon nitride film corresponding that this needs cutting; Silicon chip after the corrosion is put into the container that fills aqueous slkali and carried out cutting,, finish purpose the silicon chip cutting thereby remove product promptly by making aqueous slkali and the silicon chip generation chemical reaction that needs scored position; To the silicon chip washed with de-ionized water after the cutting, after super-dry, finish cutting again.
Described silicon chip is P type or n type single crystal silicon, and the resistivity of silicon chip is 0.2～30 Ω cm, and before deposited silicon nitride, silicon chip will be handled through conventional surface clean and surface-texturing.
Adopt pecvd process at silicon chip front deposited silicon nitride, the temperature during deposition is 200～400 ℃, and the silicon nitride film thickness of deposition is 50～300nm.Adopting pecvd process is chemical vapour deposition technique, and deposition velocity is fast, and quality of forming film is good, is difficult for be full of cracks.
Adopt the mode of silk screen printing that the silicon nitride etch slurry is printed to the electrode area that needs cutting on the silicon chip, the silicon nitride etch slurry is for containing H
3PO
4Complex compound, the thin grid line width 60～140um of printing is at 100～400 ℃ of low temperature oven dry corrosive slurries down; Carry out cutting with the silicon chip of aqueous slkali after to corrosion, the degree of depth of groove is 5～30um, and aqueous slkali is that concentration is that 1%～20% KOH solution or concentration are 1%～20% NaOH solution; In making, follow-up battery electrode select for use the method for silk screen printing to print electrode.
Adopt the mode of silk screen printing that the silicon nitride etch slurry is printed to the electrode area that needs cutting on the silicon chip, the silicon nitride etch slurry is for containing H
3PO
4Complex compound, the thin grid line width 20～140um of printing is at 100～400 ℃ of low temperature oven dry corrosive slurries down; Carry out cutting with the silicon chip of aqueous slkali after to corrosion, the degree of depth of groove is 5～60um, and aqueous slkali is that concentration is that 1%～20% KOH solution or concentration are 1%～20% NaOH solution; In making, follow-up battery electrode selects autoregistration electric plating method depositing electrode for use.
The invention has the beneficial effects as follows: adopt this method cutting can not cause damage and defective to silicon chip, the fragmentation rate is low; Easy to operate, cutting simultaneously in enormous quantities, output capacity height; On a large scale the high and groove width of groove make subsequent electrode make in silk screen printing or autoregistration plating all become possibility; Equipment is simple, and cost is low.
Embodiment
A kind of method of grooving and grid burying of crystalline silicon solar cell is characterized in that having following steps: at the front of silicon chip deposition one deck silicon nitride mask layer; The silicon nitride etch slurry is printed on the electrode area of required cutting on the silicon chip, and the oven dry etching slurry erodes the electrode area silicon nitride film corresponding that this needs cutting; Silicon chip after the corrosion is put into the container that fills aqueous slkali and carried out cutting,, finish purpose the silicon chip cutting thereby remove product promptly by making aqueous slkali and the silicon chip generation chemical reaction that needs scored position; To the silicon chip washed with de-ionized water after the cutting, after super-dry, finish cutting again.
Embodiment 1:
Select the p type single crystal silicon sheet, crystal face (100), doping content 0.5 Ω cm.Silicon chip after the section carries out surface wool manufacturing through conventional cleaning, so that remove the mechanical damage layer of silicon face, removes surface and oil contaminant and metal impurities, forms up-and-down matte, increases the absorption of silicon chip to sunlight.Under 350 ℃ of low temperature, adopting pecvd process is the silicon nitride of chemical vapour deposition technique at the positive deposition of silicon chip 70nm, and reacting gas is SiH
4, NH
3Method by silk screen printing is printed onto silicon chip front surface electrode area to etching slurry, and etching slurry is for containing H
3PO
4Complex compound, under 300 ℃ of low temperature drying conditions, erode silicon nitride, the width of the thin grid line of printing is 50～140um.It is 2% KOH solution 20 minutes that silicon chip after the corrosion is immersed concentration, and aqueous slkali is heated to 60 ℃, allows solution circulated flow or stirs so that reaction is more abundant, takes away the bubble that reaction generates.The etching groove cross 6～10um deeply, utilize deionized water with silicon chip clean surface remaining impurities and alkali lye after cutting is finished, then oven dry.
Other technologies of follow-up battery such as spread afterwards, groove broad is here selected the method for silk screen printing to the manufacture craft of positive electrode, can reduce cost under the situation that guarantees printing quality.
Embodiment 2:
Select the n type single crystal silicon sheet, crystal face (100), doping content 10 Ω cm.Silicon chip after the section carries out surface wool manufacturing through conventional cleaning, so that remove the mechanical damage layer of silicon face, removes surface and oil contaminant and metal impurities, forms up-and-down matte, increases the absorption of silicon chip to sunlight.Under 350 ℃ of low temperature, adopting pecvd process is the silicon nitride of chemical vapour deposition technique at the positive backside deposition 150～200nm of silicon chip, and reacting gas is SiH
4, NH
3Method by silk screen printing is printed onto silicon chip front surface electrode area to etching slurry, and etching slurry is for containing H
3PO
4Complex compound, under 350 ℃ of low temperature drying conditions, erode silicon nitride, the width of the thin grid line of printing is 20～50um.It is 10% KOH solution 30～50 minutes that silicon chip after the corrosion is immersed concentration, and aqueous slkali is heated to 70 ℃, allows solution circulated flow or stirs so that reaction is more abundant, takes away the bubble that reaction generates.The etching groove cross 30～40um deeply, utilize deionized water with silicon chip clean surface remaining impurities and alkali lye after cutting is finished, then oven dry.
Other technologies of follow-up battery such as spread afterwards, groove is narrower here, and the manufacture craft of positive electrode is selected the autoregistration electric plating method, can form good deposition quality, and battery shading area is little, the conversion efficiency height.
Claims (7)
1. the method for a grooving and grid burying of crystalline silicon solar cell is characterized in that having following steps:
(1) at the front of silicon chip deposition one deck silicon nitride mask layer;
(2) the silicon nitride etch slurry is printed on the electrode area of required cutting on the silicon chip, the oven dry etching slurry erodes the electrode area silicon nitride film corresponding that this needs cutting;
(3) silicon chip after the corrosion is put into the container that fills aqueous slkali and carried out cutting,, finish purpose the silicon chip cutting thereby remove product promptly by making aqueous slkali and the silicon chip generation chemical reaction that needs scored position;
(4), after super-dry, finish cutting again to the silicon chip washed with de-ionized water after the cutting.
2. the method for a kind of grooving and grid burying of crystalline silicon solar cell according to claim 1, it is characterized in that: described silicon chip is P type or n type single crystal silicon, the resistivity of silicon chip is 0.2～30 Ω cm, and before deposited silicon nitride, silicon chip will be handled through conventional surface clean and surface-texturing.
3. the method for a kind of grooving and grid burying of crystalline silicon solar cell according to claim 1 is characterized in that: adopt pecvd process at silicon chip front deposited silicon nitride, the temperature during deposition is 200～400 ℃, and the silicon nitride film thickness of deposition is 50～300nm.
4. the method for a kind of grooving and grid burying of crystalline silicon solar cell according to claim 1 is characterized in that: adopt the mode of silk screen printing that the silicon nitride etch slurry is printed to the electrode area that needs cutting on the silicon chip, the silicon nitride etch slurry is for containing H
3PO
4Complex compound, the thin grid line width 60～140um of printing is at 100～400 ℃ of low temperature oven dry corrosive slurries down; Carry out cutting with the silicon chip of aqueous slkali after to corrosion, the degree of depth of groove is 5～30um, and aqueous slkali is that concentration is that 1%～20% KOH solution or concentration are 1%～20% NaOH solution.
5. the method for a kind of grooving and grid burying of crystalline silicon solar cell according to claim 4 is characterized in that: select for use the method for silk screen printing to print electrode in follow-up battery electrode is made.
6. the method for a kind of grooving and grid burying of crystalline silicon solar cell according to claim 1 is characterized in that: adopt the mode of silk screen printing that the silicon nitride etch slurry is printed to the electrode area that needs cutting on the silicon chip, the silicon nitride etch slurry is for containing H
3PO
4Complex compound, the thin grid line width 20～140um of printing is at 100～400 ℃ of low temperature oven dry corrosive slurries down; Carry out cutting with the silicon chip of aqueous slkali after to corrosion, the degree of depth of groove is 5～60um, and aqueous slkali is that concentration is that 1%～20% KOH solution or concentration are 1%～20% NaOH solution.
7. the method for a kind of grooving and grid burying of crystalline silicon solar cell according to claim 6 is characterized in that: select autoregistration electric plating method depositing electrode for use in follow-up battery electrode is made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNA2009100297106A CN101582467A (en) | 2009-04-02 | 2009-04-02 | Method for grooving and grid burying of crystalline silicon solar cell |
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| CNA2009100297106A CN101582467A (en) | 2009-04-02 | 2009-04-02 | Method for grooving and grid burying of crystalline silicon solar cell |
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| CN101582467A true CN101582467A (en) | 2009-11-18 |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101969082A (en) * | 2010-04-20 | 2011-02-09 | 常州天合光能有限公司 | Process for manufacturing solar cell by twice screen printing and grooving |
| CN102082199A (en) * | 2010-11-19 | 2011-06-01 | 山东力诺太阳能电力股份有限公司 | Groove notching and grid burying method for crystalline silicon solar cell |
| CN102130215A (en) * | 2010-12-31 | 2011-07-20 | 常州天合光能有限公司 | Production process of high-efficiency solar cell |
| CN102176491A (en) * | 2011-02-27 | 2011-09-07 | 百力达太阳能股份有限公司 | Process for manufacturing buried solar cell by plasma etching and slotting |
| CN102255000A (en) * | 2011-08-08 | 2011-11-23 | 山东力诺太阳能电力股份有限公司 | Preparing method of solar cell slice with pattern |
| CN102522459A (en) * | 2011-12-29 | 2012-06-27 | 彩虹集团公司 | Grooving and contact burying method for crystalline silicon solar cell |
| CN102544209A (en) * | 2011-12-29 | 2012-07-04 | 彩虹集团公司 | Groove notching method of crystal silicon solar cell |
| CN102527676A (en) * | 2011-12-14 | 2012-07-04 | 青岛吉阳新能源有限公司 | Cleaning process method for etching resistant mask slurry |
| CN102569528A (en) * | 2012-02-23 | 2012-07-11 | 常州天合光能有限公司 | Preparation method of selective-contact solar battery front electrode |
| CN102969390A (en) * | 2012-08-27 | 2013-03-13 | 横店集团东磁股份有限公司 | Windowing process of solar crystalline silicon battery |
-
2009
- 2009-04-02 CN CNA2009100297106A patent/CN101582467A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101969082B (en) * | 2010-04-20 | 2012-07-25 | 常州天合光能有限公司 | Process for manufacturing solar cell by twice screen printing and grooving |
| CN101969082A (en) * | 2010-04-20 | 2011-02-09 | 常州天合光能有限公司 | Process for manufacturing solar cell by twice screen printing and grooving |
| CN102082199A (en) * | 2010-11-19 | 2011-06-01 | 山东力诺太阳能电力股份有限公司 | Groove notching and grid burying method for crystalline silicon solar cell |
| CN102130215A (en) * | 2010-12-31 | 2011-07-20 | 常州天合光能有限公司 | Production process of high-efficiency solar cell |
| CN102176491A (en) * | 2011-02-27 | 2011-09-07 | 百力达太阳能股份有限公司 | Process for manufacturing buried solar cell by plasma etching and slotting |
| CN102255000A (en) * | 2011-08-08 | 2011-11-23 | 山东力诺太阳能电力股份有限公司 | Preparing method of solar cell slice with pattern |
| CN102255000B (en) * | 2011-08-08 | 2014-05-07 | 山东力诺太阳能电力股份有限公司 | Preparing method of solar cell slice with pattern |
| CN102527676A (en) * | 2011-12-14 | 2012-07-04 | 青岛吉阳新能源有限公司 | Cleaning process method for etching resistant mask slurry |
| CN102527676B (en) * | 2011-12-14 | 2013-11-06 | 青岛吉阳新能源有限公司 | Cleaning process method for etching resistant mask slurry |
| CN102522459A (en) * | 2011-12-29 | 2012-06-27 | 彩虹集团公司 | Grooving and contact burying method for crystalline silicon solar cell |
| CN102544209A (en) * | 2011-12-29 | 2012-07-04 | 彩虹集团公司 | Groove notching method of crystal silicon solar cell |
| CN102569528A (en) * | 2012-02-23 | 2012-07-11 | 常州天合光能有限公司 | Preparation method of selective-contact solar battery front electrode |
| CN102969390A (en) * | 2012-08-27 | 2013-03-13 | 横店集团东磁股份有限公司 | Windowing process of solar crystalline silicon battery |
| CN102969390B (en) * | 2012-08-27 | 2015-03-11 | 横店集团东磁股份有限公司 | Windowing process of solar crystalline silicon battery |
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Application publication date: 20091118 |