CN102496660A - Acid-base combined monocrystalline silicon solar cell texturing method - Google Patents
Acid-base combined monocrystalline silicon solar cell texturing method Download PDFInfo
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- CN102496660A CN102496660A CN2011104537322A CN201110453732A CN102496660A CN 102496660 A CN102496660 A CN 102496660A CN 2011104537322 A CN2011104537322 A CN 2011104537322A CN 201110453732 A CN201110453732 A CN 201110453732A CN 102496660 A CN102496660 A CN 102496660A
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- wool
- making herbs
- solar cell
- silicon solar
- alkali
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a solar cell making field and discloses an acid-base combined monocrystalline silicon solar cell texturing method. The method comprises the following steps: damage removing, alkali texturing, acid texturing, metal ion removing and passivating. According to the invention, an acid texturing technology is added after a current monocrystalline alkali texturing technology so as to form a special surface structure. Recombination centers of a silicon chip surface can be reduced. A recombination rate of a carrier on the silicon chip surface can be effectively reduced. A specific surface area of a PN junction can be reduced. An open-circuit voltage can be obviously increased and photoelectric conversion efficiency of the monocrystalline silicon solar cell can be greatly improved.
Description
Technical field:
The present invention relates to solar cell and make the field, be specifically related to a kind of monocrystaline silicon solar cell etching method.
Background technology:
Solar cell is a kind of novel energy conversion equipment, and wherein, monocrystaline silicon solar cell is high with its conversion efficiency, stable performance and gaining great popularity.For improving the photoelectric conversion efficiency of solar cell; In its manufacturing process; At first need silicon chip is carried out chemical treatment; Form specific anti-reflection structure to increase absorption at silicon chip surface on the one hand, remove silicon chip surface on the other hand because the thick mechanical damage layer of 10-20um that section stays to light.Existing etching method is to go to carry out alkali making herbs into wool after the damage, mainly with the reference of making herbs into wool back reflection rate as the matte quality; Through chemical reaction silicon chip surface is carried out anisotropic etch; Obtain evenly densely covered pyramid surface texture, increased the absorption of light, improved short circuit current.But there is a large amount of complex centres in the surface that obtains through existing alkali process for etching; Be unfavorable for the collection of PN junction to charge carrier; And because the specific area of PN junction is bigger, be unfavorable for the raising of open circuit voltage, the big limitations of this suede structure the lifting of monocrystaline silicon solar cell efficient.For satisfying market to the high-power demand of solar cell; On the basis of existing monocrystalline alkali making herbs into wool, the high-efficiency battery emerge in multitude of technologic improvement, common have secondary printing and a selective emitter battery; Although can promote efficient; But need to introduce expensive equipment and raw material, obviously increase technology duration and processing step, production cost is higher.
For addressing the above problem the monocrystaline silicon solar cell process for etching that the applicant has found a kind of soda acid to combine through prolonged and repeated test.
Summary of the invention:
The purpose of this invention is to provide the monocrystaline silicon solar cell etching method that a kind of soda acid combines; It can reduce the complex centre of silicon chip surface; Effectively reduce the recombination rate of charge carrier at silicon chip surface; Can reduce the specific area of PN junction again, obviously improve open circuit voltage, thereby significantly promote the photoelectric conversion efficiency of monocrystaline silicon solar cell.In addition, this process for etching need not to prolong the process time, only needs existing etching device is simply improved and can be realized.
The technical scheme that the present invention adopted is following:
The monocrystaline silicon solar cell etching method that a kind of soda acid combines; May further comprise the steps: go damage, alkali making herbs into wool, sour making herbs into wool, go metal ion and passivation; It is characterized in that: the used making herbs into wool solution of said alkali making herbs into wool is NaOH or KOH solution; After alkali making herbs into wool, set up sour making herbs into wool, the used making herbs into wool solution of sour making herbs into wool is HF and HNO
3Mixed solution.
Further, when alkali making herbs into wool, the quality percentage composition of said NaOH or KOH solution is 1%～5%.
Further, when alkali making herbs into wool, the temperature of alkali making herbs into wool is 70 ℃～90 ℃.
Further, when alkali making herbs into wool, the corrosion depth of silicon chip is controlled at 1～6um after the alkali making herbs into wool, and the reference time of alkali making herbs into wool is 6-18 minute.
Further, when sour making herbs into wool, used Woolen-making liquid is HF and HNO
3Mixed solution, wherein the concentration of HF is 40%-50%, HNO
3Concentration be 60%-70%.
Further, when sour making herbs into wool, HF and HNO in acid making herbs into wool solution
3Volumn concentration be 50%～80%.
Further, used acid suede liquid is HF and HNO during sour making herbs into wool
3Mixed solution, HF and HNO
3Volume ratio be 1: 2～7.
Further, the temperature when sour making herbs into wool is controlled at 2～16 ℃.
Further, the corrosion depth of controlling sour making herbs into wool is 1～10um, and the reference time of sour making herbs into wool is 10～140 seconds.
Advantage of the present invention is: owing to after alkali making herbs into wool, set up sour making herbs into wool, can the unstable structure of pyramid bottom further be corroded, form narrow groove, make the dispersion that becomes of original densely covered pyramid structure.It can reduce the complex centre of silicon chip surface, effectively reduces the recombination rate of charge carrier at silicon chip surface, can reduce the specific area of PN junction again, obviously improves open circuit voltage, thereby significantly promotes the photoelectric conversion efficiency of monocrystaline silicon solar cell.Adopt the present invention, open circuit voltage can promote 8～15mV, and battery conversion efficiency can promote 0.4～0.6%, is that the monocrystalline of 125-165 is an example with the silicon chip type, adopts the present invention to compare with existing alkali process for etching, and the contrast of gained canonical parameter is like following table:
| Etching method | Pmpp | Uoc | Isc | FF | NCell |
| Prior art (alkali making herbs into wool) | 2.6821 | 0.6139 | 5.6557 | 77.25 | 0.1732 |
| The present invention | 2.7530 | 0.6265 | 5.6674 | 77.54 | 0.1778 |
In addition, existing alkali making herbs into wool required time is about 30 minutes, adopts the present invention, and total making herbs into wool time of alkali making herbs into wool and sour making herbs into wool is merely 26-28 minute; The making herbs into wool time need not to prolong, and can also shorten, and acid making herbs into wool solution composition is confirmed; Preparation technique is ripe, can not be equipped with refrigerator, uses cooling circulating water can satisfy technological requirement; The spent acid that produces in the production can effectively be handled through neutralization reaction, only needs existing etching device is simply improved and can be realized, the making herbs into wool cost does not increase.
Description of drawings:
Fig. 1 is a technological process frame diagram of the present invention.
Embodiment:
Embodiment 1: the p type single crystal silicon sheet is adopted in experiment, and its resistivity is 0.5～3 Ω cm.
The monocrystaline silicon solar cell etching method that a kind of soda acid combines; As shown in Figure 1, it may further comprise the steps: go damage, alkali making herbs into wool, sour making herbs into wool, go metal ion and passivation, wherein the used making herbs into wool solution of alkali making herbs into wool is NaOH or KOH solution; The quality percentage composition of said NaOH or KOH solution is 1%; The temperature of alkali making herbs into wool is 83-85 ℃, and the corrosion depth of silicon chip is controlled at 3um after the alkali making herbs into wool, and the reference time of alkali making herbs into wool is 16 minutes; After alkali making herbs into wool, set up sour making herbs into wool, the used making herbs into wool solution of sour making herbs into wool is HF and HNO
3Mixed solution, wherein the concentration of HF is 49%, HNO
3Concentration be 69%, HF and HNO
3Volume ratio be 1: 7, HF and HNO in acid making herbs into wool solution
3Volumn concentration be 50%, the temperature of sour making herbs into wool is controlled at 14～16 ℃, the corrosion depth of controlling sour making herbs into wool is 1-3um, the reference time of sour making herbs into wool is 140 seconds.
Embodiment 2: the p type single crystal silicon sheet is adopted in experiment, and its resistivity is 0.5～3 Ω cm.
The monocrystaline silicon solar cell etching method that a kind of soda acid combines; As shown in Figure 1; It may further comprise the steps: go damage, alkali making herbs into wool, sour making herbs into wool, go metal ion and passivation; Wherein the used making herbs into wool solution of alkali making herbs into wool is NaOH or KOH solution, and the quality percentage composition of said NaOH or KOH solution is 2.5%.The temperature of alkali making herbs into wool is 78 ℃～80 ℃.The corrosion depth of silicon chip is controlled at 2～5um after the alkali making herbs into wool, and the reference time of alkali making herbs into wool is 12 minutes, after alkali making herbs into wool, sets up sour making herbs into wool, and the used making herbs into wool solution of sour making herbs into wool is HF and HNO
3Mixed solution, wherein the concentration of HF is 49%, HNO
3Concentration be 69%, HF and HNO
3Volume ratio be 1: 5, HF and HNO in acid making herbs into wool solution
3Volumn concentration be 65%, the temperature of sour making herbs into wool is controlled at 10-12 ℃, the corrosion depth of controlling sour making herbs into wool is 1～5um, the reference time of sour making herbs into wool is 80 seconds.
Embodiment 3: the p type single crystal silicon sheet is adopted in experiment, and its resistivity is 0.5～3 Ω cm.
The monocrystaline silicon solar cell etching method that a kind of soda acid combines; As shown in Figure 1; It may further comprise the steps: go damage, alkali making herbs into wool, sour making herbs into wool, go metal ion and passivation; Wherein the used making herbs into wool solution of alkali making herbs into wool is NaOH or KOH solution, and the quality percentage composition of said NaOH or KOH solution is 5%.The temperature of alkali making herbs into wool is 73-75 ℃.The corrosion depth of silicon chip is controlled at 5um after the alkali making herbs into wool, and the reference time of alkali making herbs into wool is 8 minutes, after alkali making herbs into wool, sets up sour making herbs into wool, and the used making herbs into wool solution of sour making herbs into wool is HF and HNO
3Mixed solution, wherein the concentration of HF is 49%, HNO
3Concentration be 69%, HF and HNO
3Volume ratio be 1: 3, HF and HNO in acid making herbs into wool solution
3Volumn concentration be 75%, the temperature of sour making herbs into wool is controlled at 5-8 ℃, the corrosion depth of controlling sour making herbs into wool is 1～8um, the reference time of sour making herbs into wool is 30 seconds.
The foregoing description is a preferred implementation of the present invention; But execution mode of the present invention is not restricted to the described embodiments; Other is any not to deviate from the change done under spirit of the present invention and the principle, modification, is substituting, combination, simplifying; All should be the substitute mode of equivalence, be included in protection scope of the present invention.
Claims (9)
1. the monocrystaline silicon solar cell etching method that combines of a soda acid; May further comprise the steps: go damage, alkali making herbs into wool, sour making herbs into wool, go metal ion and passivation; It is characterized in that: the used making herbs into wool solution of said alkali making herbs into wool is NaOH or KOH solution; After alkali making herbs into wool, set up sour making herbs into wool, the used making herbs into wool solution of sour making herbs into wool is HF and HNO
3Mixed solution.
2. the monocrystaline silicon solar cell etching method that combines according to the said soda acid of claim 1, it is characterized in that: when alkali making herbs into wool, the quality percentage composition of said NaOH or KOH solution is 1%～5%.
3. the monocrystaline silicon solar cell etching method that combines according to the said soda acid of claim 1, it is characterized in that: when alkali making herbs into wool, the temperature of alkali making herbs into wool is 70 ℃～90 ℃.
4. the monocrystaline silicon solar cell etching method that combines according to the said soda acid of claim 1, it is characterized in that: when alkali making herbs into wool, the corrosion depth of silicon chip is controlled at 1～6um after the alkali making herbs into wool.
5. the monocrystaline silicon solar cell etching method that combines according to the said soda acid of claim 1, it is characterized in that: when sour making herbs into wool, used Woolen-making liquid is HF and HNO
3Mixed solution, wherein the concentration of HF is 40%-50%, HNO
3Concentration be 60%-70%.
6. the monocrystaline silicon solar cell etching method that combines according to the said soda acid of claim 1 is characterized in that: when sour making herbs into wool, and HF and HNO in acid making herbs into wool solution
3Volumn concentration be 50%～80%.
7. the monocrystaline silicon solar cell etching method that combines according to the said soda acid of claim 1 is characterized in that: used acid suede liquid is HF and HNO during sour making herbs into wool
3Mixed solution, HF and HNO
3Volume ratio be 1: 2～7.
8. the monocrystaline silicon solar cell etching method that combines according to the said soda acid of claim 1, it is characterized in that: the temperature when sour making herbs into wool is controlled at 2～16 ℃.
9. the monocrystaline silicon solar cell etching method that combines according to the said soda acid of claim 1, it is characterized in that: the corrosion depth of controlling sour making herbs into wool is 1～10um, the reference time of sour making herbs into wool is 10～140 seconds.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103721968A (en) * | 2012-10-15 | 2014-04-16 | 江苏天宇光伏科技有限公司 | Texturing and cleaning method for improving battery conversion efficiency |
| CN103924305A (en) * | 2013-01-14 | 2014-07-16 | 东莞市长安东阳光铝业研发有限公司 | Making method of quasi-monocrystalline silicon wafer suede |
| CN104404627A (en) * | 2014-10-24 | 2015-03-11 | 苏州阿特斯阳光电力科技有限公司 | Surface pretreatment process before crystalline silicon RIE fleece making |
| CN110438571A (en) * | 2019-08-14 | 2019-11-12 | 中节能太阳能科技有限公司 | A kind of efficient monocrystalline process for etching and its equipment |
| CN112436074A (en) * | 2020-11-30 | 2021-03-02 | 中建材浚鑫科技有限公司 | Texturing and cleaning process suitable for double-sided silicon solar cell |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103721968A (en) * | 2012-10-15 | 2014-04-16 | 江苏天宇光伏科技有限公司 | Texturing and cleaning method for improving battery conversion efficiency |
| CN103924305A (en) * | 2013-01-14 | 2014-07-16 | 东莞市长安东阳光铝业研发有限公司 | Making method of quasi-monocrystalline silicon wafer suede |
| CN104404627A (en) * | 2014-10-24 | 2015-03-11 | 苏州阿特斯阳光电力科技有限公司 | Surface pretreatment process before crystalline silicon RIE fleece making |
| CN104404627B (en) * | 2014-10-24 | 2017-07-25 | 苏州阿特斯阳光电力科技有限公司 | A kind of surface pre-treating process before crystalline silicon RIE making herbs into wool |
| CN110438571A (en) * | 2019-08-14 | 2019-11-12 | 中节能太阳能科技有限公司 | A kind of efficient monocrystalline process for etching and its equipment |
| CN112436074A (en) * | 2020-11-30 | 2021-03-02 | 中建材浚鑫科技有限公司 | Texturing and cleaning process suitable for double-sided silicon solar cell |
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Application publication date: 20120613 |