CN201717272U - Solar cell silicon chip with one texture-etching side - Google Patents
Solar cell silicon chip with one texture-etching side Download PDFInfo
- Publication number
- CN201717272U CN201717272U CN2010202232462U CN201020223246U CN201717272U CN 201717272 U CN201717272 U CN 201717272U CN 2010202232462 U CN2010202232462 U CN 2010202232462U CN 201020223246 U CN201020223246 U CN 201020223246U CN 201717272 U CN201717272 U CN 201717272U
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- silicon chip
- wool
- making herbs
- texture
- solar cell
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model relates to a solar cell silicon chip with one texture-etching side, which comprises a silicon chip, wherein a texture-etching layer is arranged on the upper surface of the silicon chip, and a layer of silicon nitride film used as a texture-etching blocking layer is arranged on the lower surface of the silicon chip. The traditional acid/alkaline texture-etching method used for single-sided texture-etching of the solar cell silicon chip is possible and cost is saved compared with the RIE texture-etching method and the photoetching method.
Description
Technical field
The utility model relates to crystal silicon solar energy battery, especially a kind of silicon chip of solar cell that is used for single face making herbs into wool.
Background technology
The first step is a cleaning and texturing in preparation technology's flow process of traditional solar cell, and then carries out follow-up technology, and the purpose of making herbs into wool is to reduce battery surface to the reflection of light rate, thereby improves the absorptivity of light.Its traditional etching method comprises alkali making herbs into wool, sour making herbs into wool, and alkali making herbs into wool and sour etching method are two sides making herbs into wool simultaneously, in addition also has the special etching method of other high-efficiency batteries, for example: RIE making herbs into wool, photoetching making herbs into wool etc., these methods can form one side making herbs into wool, but cost is higher relatively.
Alkali making herbs into wool, sour making herbs into wool, RIE making herbs into wool, photoetching making herbs into wool principle is as follows:
Alkali making herbs into wool: the speed difference according to each crystal face corrosion of Si, with aqueous slkali silicon chip surface is eroded away pyramid, the silicon chip tow sides all form pyramid, and are low to the emissivity of light;
Acid making herbs into wool: the solution that is made into according to certain proportioning with nitric acid, hydrofluoric acid comes the corrosion of silicon surface, and the matte of formation is irregular pit, and the silicon chip two sides forms such matte simultaneously, obverse and reverse low to the reflection of light rate;
RIE making herbs into wool: in the sensitive surface of silicon chip reactive ion body etching, form the low matte of reflectivity, the simultaneously making herbs into wool of this method, but cost height, the follow-up affected layer difficulty of going is bigger;
Photoetching making herbs into wool: earlier be about oxide-film about 1um at the silicon chip surface layer thickness of growing, re-use the method making herbs into wool of photoetching, reflectivity is low, the cost height.
The utility model content
The technical problems to be solved in the utility model is: the single face making herbs into wool that provides a kind of silicon chip to be used for solar cell is produced.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of silicon chip of solar cell that is used for single face making herbs into wool, have silicon chip, and the upper surface of silicon chip is the making herbs into wool layer, the lower surface of silicon chip has the silicon nitride film of one deck as the making herbs into wool barrier layer.
The thickness of silicon nitride film is 5nm-200nm.
The beneficial effects of the utility model are, make the single face making herbs into wool of carrying out silicon chip of solar cell by classical acid, alkali etching method become possibility, with respect to RIE making herbs into wool and photoetching making herbs into wool, have saved cost.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Fig. 1 is a structural representation of the present utility model.
Among the figure: 1. silicon chip, 2. making herbs into wool layer, 3. silicon nitride film.
Embodiment
The silicon chip of solar cell that is used for single face making herbs into wool as shown in Figure 1 has silicon chip 1, and the upper surface of silicon chip 1 is a making herbs into wool layer 2, and the lower surface of silicon chip 1 has the silicon nitride film 3 of one deck as the making herbs into wool barrier layer, and the thickness of silicon nitride film 3 is 5nm-200nm.
Silicon chip 1 is put into alkali system solution, according to the speed difference of each crystal face corrosion of silicon, alkali system solution corrodes the surface of silicon chip, and the upper surface of silicon chip 1 erodes away pyramid, because the lower surface at silicon chip 1 has silicon nitride film 3 as the barrier layer, so just formed the silicon chip of single face making herbs into wool.
Silicon chip 1 is put into acid system solution, the surface of silicon chip 1 is corroded according to certain proportioning wiring solution-forming with nitric acid, hydrofluoric acid, upper surface at silicon chip 1 forms irregular pit, because the lower surface at silicon chip 1 has silicon nitride film 3 as the barrier layer, so just formed the silicon chip of single face making herbs into wool.
Silicon chip after the single face making herbs into wool again through conventional diffusion, dephosphorization silex glass and carve the limit, print electrode, steps such as sintering and electric performance test just can form finished product.
Claims (2)
1. a silicon chip of solar cell that is used for single face making herbs into wool has silicon chip (1), it is characterized in that: the upper surface of described silicon chip (1) is making herbs into wool layer (2), and the lower surface of silicon chip (1) has the silicon nitride film (3) of one deck as the making herbs into wool barrier layer.
2. the silicon chip of solar cell that is used for single face making herbs into wool according to claim 1 is characterized in that: the thickness of described silicon nitride film (3) is 5nm-200nm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2010202232462U CN201717272U (en) | 2010-06-10 | 2010-06-10 | Solar cell silicon chip with one texture-etching side |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN2010202232462U CN201717272U (en) | 2010-06-10 | 2010-06-10 | Solar cell silicon chip with one texture-etching side |
Publications (1)
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CN201717272U true CN201717272U (en) | 2011-01-19 |
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Family Applications (1)
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CN2010202232462U Expired - Fee Related CN201717272U (en) | 2010-06-10 | 2010-06-10 | Solar cell silicon chip with one texture-etching side |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102496660A (en) * | 2011-12-30 | 2012-06-13 | 常州亿晶光电科技有限公司 | Acid-base combined monocrystalline silicon solar cell texturing method |
CN102651423A (en) * | 2011-02-25 | 2012-08-29 | 茂迪(苏州)新能源有限公司 | Selective wool fabricating method for solar battery |
CN102779903A (en) * | 2012-08-13 | 2012-11-14 | 苏州盛康光伏科技有限公司 | Method for preparing solar battery |
CN107611185A (en) * | 2017-09-08 | 2018-01-19 | 江苏科来材料科技有限公司 | A kind of BIPV double-side assemblies of p-type double-side cell core and preparation method thereof |
-
2010
- 2010-06-10 CN CN2010202232462U patent/CN201717272U/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102651423A (en) * | 2011-02-25 | 2012-08-29 | 茂迪(苏州)新能源有限公司 | Selective wool fabricating method for solar battery |
CN102496660A (en) * | 2011-12-30 | 2012-06-13 | 常州亿晶光电科技有限公司 | Acid-base combined monocrystalline silicon solar cell texturing method |
CN102779903A (en) * | 2012-08-13 | 2012-11-14 | 苏州盛康光伏科技有限公司 | Method for preparing solar battery |
CN107611185A (en) * | 2017-09-08 | 2018-01-19 | 江苏科来材料科技有限公司 | A kind of BIPV double-side assemblies of p-type double-side cell core and preparation method thereof |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110119 Termination date: 20170610 |