CN202150463U - Polysilicon thin film solar cell - Google Patents
Polysilicon thin film solar cell Download PDFInfo
- Publication number
- CN202150463U CN202150463U CN 201120288448 CN201120288448U CN202150463U CN 202150463 U CN202150463 U CN 202150463U CN 201120288448 CN201120288448 CN 201120288448 CN 201120288448 U CN201120288448 U CN 201120288448U CN 202150463 U CN202150463 U CN 202150463U
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- China
- Prior art keywords
- wool
- texture
- silicon chip
- nitride film
- making herbs
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a polysilicon thin film solar cell including a silicon chip. The silicon chip is formed by a texture-etched layer and a silicon nitride film in a combined manner. The silicon nitride film has a texture-etching barrier layer. The thickness of the silicon nitride film is 5 nm to 200 nm. In the utility model, single side texture-etching of the silicon chip of the solar cell becomes possible by adopting a traditional acid and alkaili texture-etching method. Compared with an RIE texture-etching method and a photoetching texture-etching method, the traditional acid and alkaili texture-etching method has a lower cost.
Description
Technical field
The utility model relates to solar cell, especially a kind of multi-crystal silicon film solar battery.
Background technology
The first step is a cleaning and texturing in preparation technology's flow process of common solar cell, and then carries out follow-up technology, and the purpose of making herbs into wool is to reduce battery surface to the reflection of light rate, thereby improves the absorptivity of light.Its traditional etching method comprises alkali making herbs into wool, sour making herbs into wool, and alkali making herbs into wool and sour etching method are two sides making herbs into wool simultaneously, in addition also has the special etching method of other high-efficiency batteries; For example: RIE making herbs into wool; Photoetching making herbs into wool etc., these methods can form one side making herbs into wool, but cost is higher relatively.Alkali making herbs into wool, sour making herbs into wool, RIE making herbs into wool, photoetching making herbs into wool principle is following:
Alkali making herbs into wool: the speed according to each crystal face corrosion of Si is different, with aqueous slkali silicon chip surface is eroded away pyramid, and the silicon chip tow sides all form pyramid, and are low to the emissivity of light;
Acid making herbs into wool: the solution that is made into according to certain proportioning with nitric acid, hydrofluoric acid comes corrosion of silicon surperficial, and the matte of formation is irregular pit, and the silicon chip two sides forms such matte simultaneously, obverse and reverse low to the reflection of light rate;
RIE making herbs into wool: with reactive ion body etching, form the low matte of reflectivity at the sensitive surface of silicon chip, this method can one side making herbs into wool, but cost is high, and the follow-up affected layer difficulty of going is bigger;
Photoetching making herbs into wool: earlier be about the oxide-film about 1um at the silicon chip surface layer thickness of growing, re-use the method making herbs into wool of photoetching, reflectivity is low, and cost is high.
Summary of the invention
The utility model provides a kind of novel multi-crystal silicon film solar battery for the technical solution problem.
To achieve these goals, the utility model solution technical scheme that its technical problem adopted is:
Multi-crystal silicon film solar battery comprises silicon chip, and described silicon chip is to be composited by making herbs into wool layer and silicon nitride film, and described silicon nitride film is to have the silicon nitride film of one deck as the making herbs into wool barrier layer.
The thickness of described silicon nitride film is 5nm-200nm.
The beneficial effect of the utility model is: make the single face making herbs into wool of carrying out silicon chip of solar cell through classical acid, alkali etching method become possibility, with respect to RIE making herbs into wool and photoetching making herbs into wool, practiced thrift cost.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Embodiment
As shown in the figure; Multi-crystal silicon film solar battery comprises silicon chip 1, and described silicon chip 1 is to be composited by making herbs into wool layer 2 and silicon nitride film 3; Described silicon nitride film 3 is to have the silicon nitride film 3 of one deck as the making herbs into wool barrier layer, and the thickness of described silicon nitride film 3 is 5nm-200nm.
Implement 1:
Silicon chip 1 is put into alkali system solution; Speed according to each crystal face corrosion of silicon is different, and alkali system solution corrodes the surface of silicon chip, and the upper surface of silicon chip 1 erodes away pyramid; Because the lower surface at silicon chip 1 has silicon nitride film 3 as the barrier layer, so just formed the silicon chip of single face making herbs into wool.
Implement 2
Silicon chip 1 is put into acid system solution; The surface of silicon chip 1 is corroded according to certain proportioning wiring solution-forming with nitric acid, hydrofluoric acid; Upper surface at silicon chip 1 forms irregular pit; Because the lower surface at silicon chip 1 has silicon nitride film 3 as the barrier layer, so just formed the silicon chip of single face making herbs into wool.
Silicon chip after the single face making herbs into wool again through conventional diffusion, dephosphorization silex glass and carve the limit, print electrode, steps such as sintering and electric performance test just can form finished product.
Claims (2)
1. multi-crystal silicon film solar battery comprises silicon chip (1), it is characterized in that: described silicon chip (1) is to be composited by making herbs into wool layer (2) and silicon nitride film (3), and described silicon nitride film (3) is to have the silicon nitride film (3) of one deck as the making herbs into wool barrier layer.
2. multi-crystal silicon film solar battery according to claim 1 is characterized in that: the thickness of described silicon nitride film (3) is 5nm-200nm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201120288448 CN202150463U (en) | 2011-08-10 | 2011-08-10 | Polysilicon thin film solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201120288448 CN202150463U (en) | 2011-08-10 | 2011-08-10 | Polysilicon thin film solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202150463U true CN202150463U (en) | 2012-02-22 |
Family
ID=45591515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 201120288448 Expired - Fee Related CN202150463U (en) | 2011-08-10 | 2011-08-10 | Polysilicon thin film solar cell |
Country Status (1)
Country | Link |
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CN (1) | CN202150463U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104701407A (en) * | 2013-12-05 | 2015-06-10 | 骆志炯 | Surface texturing method of solar battery and of great-wall solar battery substrate |
-
2011
- 2011-08-10 CN CN 201120288448 patent/CN202150463U/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104701407A (en) * | 2013-12-05 | 2015-06-10 | 骆志炯 | Surface texturing method of solar battery and of great-wall solar battery substrate |
WO2015081876A1 (en) * | 2013-12-05 | 2015-06-11 | 骆志炯 | Solar battery surface texturing processing method |
CN104701407B (en) * | 2013-12-05 | 2017-09-01 | 骆志炯 | The surface wool manufacturing processing method of solar cell |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120222 Termination date: 20140810 |
|
EXPY | Termination of patent right or utility model |