CN101976700B - Post-cleaning technology of silicon wafer - Google Patents
Post-cleaning technology of silicon wafer Download PDFInfo
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- CN101976700B CN101976700B CN2010102382375A CN201010238237A CN101976700B CN 101976700 B CN101976700 B CN 101976700B CN 2010102382375 A CN2010102382375 A CN 2010102382375A CN 201010238237 A CN201010238237 A CN 201010238237A CN 101976700 B CN101976700 B CN 101976700B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention relates to the technical field of production methods of solar batteries, in particular to a post-cleaning technology of a polysilicon wafer for solar battery. The technology comprises the following steps: a, etching and diffusing a polycrystalline silicon wafer to obtain a uniform diffusion zone with 25-80ohm/Sq; and b, corroding the diffusion zone with acid solution, wherein in the acid solution, the volume concentration of HF is 1.6%-4.5%, the volume concentration of HNO3 is 20%-30%, the volume concentration of CH3COOH is 33%-39%, the balance is H2O, the corrosion time is controlled in 20-180s and the temperature is 15-25 DEG C. In the post-cleaning technology of the silicon wafer, through optimizing the solution proportion, the reaction rate of the solution can be accurately controlled and the reflectivity of the surface of the silicon wafer is not improved, thereby improving the efficiency of the solar battery.
Description
Technical field
The present invention relates to manufacture of solar cells method and technology field, especially a kind of back cleaning of polycrystalline silicon used for solar battery sheet.
Background technology
The efficient of polysilicon solar cell does not have the height of single crystal silicon solar cell generally, this mainly is owing to two reasons, the minority carrier lifetime of polycrystalline silicon material itself does not have the height of monocrystalline silicon on the one hand, and the sunken light effect of present on the other hand acid system making herbs into wool technology does not have the making herbs into wool of monocrystalline alkaline process good.In present traditional handicraft, dwindle the gap on the efficient between polysilicon solar cell and the single crystal silicon solar cell, can the polycrystalline silicon material life-span be improved by gettering on the one hand, the cleaning after the gettering will reduce or not influence reflectivity as much as possible on the other hand.
Present widely used acid etching solution is with HF-HNO
3Be the water solution system on basis,, also add some other chemicals sometimes in order to control the severe degree of chemical reaction.But basic chemical reaction is constant, and etching mechanism roughly is HNO
3(a kind of oxidant) corrosion has formed one deck SiO at silicon chip surface
2, this layer SiO then
2Under the effect of HF acid, remove.Acid is irrelevant to the corrosion rate and the grain orientation of silicon, so acid corrosion is called isotropic etch again.
Summary of the invention
The technical problem to be solved in the present invention is: in order to solve the technical problem that the cleaning afterwards of diffusion gettering does not influence reflectivity, the invention provides a kind of back cleaning of polycrystalline silicon used for solar battery sheet.
The technical solution adopted for the present invention to solve the technical problems is: a kind of back cleaning of polycrystalline silicon used for solar battery sheet, and it has following steps:
A. with polysilicon chip through silicon chip making herbs into wool, diffusion, obtain the even diffusion region of 25～80ohm/Sq;
B. in order to reduce surface concentration and junction depth or to etch away the surface impurity enrichment region, corrode with acid solution, in the acid solution: the HF volumetric concentration accounts for 1.6%～4.5%, HNO again
3Volumetric concentration accounts for 20%～30%, CH
3The COOH volumetric concentration accounts for 33%～39%, and all the other are H
2O is controlled at etching time 20～180 seconds, and temperature is 15～25 ℃, and etch rate is 0.002～0.02um/s, and after the acid solution corrosion, the silicon chip surface reflectivity does not improve.
As preferably: a kind of back cleaning of polycrystalline silicon used for solar battery sheet:
A. with polysilicon chip through silicon chip making herbs into wool, diffusion, obtain the even diffusion region of 45ohm/Sq;
B. corrode with acid solution, in the acid solution: the HF volumetric concentration accounts for 2.3%, HNO again
3Volumetric concentration accounts for 21%, CH
3The COOH volumetric concentration accounts for 33%, and all the other are H
2O, temperature is 18 ℃.
Preferred as another: a kind of back cleaning of polycrystalline silicon used for solar battery sheet:
A. with polysilicon chip through silicon chip making herbs into wool, diffusion, obtain the even diffusion region of 70ohm/Sq;
B. corrode with acid solution, in the acid solution: the HF volumetric concentration accounts for 3.1%, HNO again
3Volumetric concentration accounts for 20.3%, CH
3The COOH volumetric concentration accounts for 38%, and all the other are H
2O, temperature is 18 ℃.
The invention has the beneficial effects as follows that the back cleaning of silicon chip of the present invention by optimizing solution ratio, can accurately control the reaction rate of solution, and the reflectivity of silicon chip surface does not improve.
Embodiment
Embodiment 1
Get P type polysilicon chip, resistivity: 2.5 Ω cm,
Silicon chip is through making herbs into wool, diffusion, and its square resistance is 45ohm/Sq, after to put into volume by volume concentration be HF:2.3%, HNO3:31%, CH3COOH:33%, all the other are H
2In the mixed acid solution of O, solution temperature is controlled at 18 ℃, and then the corrosion rate of solution is 0.0125um/s, and the silicon chip surface reflectivity does not improve.
Embodiment 2:
Get P type polysilicon chip, resistivity: 0.5 Ω cm,
Silicon chip is through making herbs into wool, high low temperature gettering, and its square resistance is 70ohm/Sq, after to put into volume by volume concentration be HF:3.1%, HNO3:20.3%, CH3COOH:38%, all the other are H
2In the mixed acid solution of O, solution temperature is controlled at 18 ℃, and then the corrosion rate of solution is 0.004um/s, and the silicon chip surface reflectivity does not improve.
Claims (3)
1. the back cleaning of a polycrystalline silicon used for solar battery sheet is characterized in that: have following steps:
A. with polysilicon chip through silicon chip making herbs into wool, diffusion, obtain the even diffusion region of 25～80ohm/Sq;
B. corrode with acid solution, in the acid solution: the HF volumetric concentration accounts for 1.6%～4.5%, HNO again
3Volumetric concentration accounts for 20%～30%, CH
3The COOH volumetric concentration accounts for 33%～39%, and all the other are H
2O is controlled at etching time 20～180 seconds, and temperature is 15～25 ℃, and etch rate is 0.002～0.02um/s, and after the acid solution corrosion, the silicon chip surface reflectivity does not improve.
2. the back cleaning of polycrystalline silicon used for solar battery sheet as claimed in claim 1 is characterized in that:
A. with polysilicon chip through silicon chip making herbs into wool, diffusion, obtain the even diffusion region of 45ohm/Sq;
B. corrode with acid solution, in the acid solution: the HF volumetric concentration accounts for 2.3%, HNO again
3Volumetric concentration accounts for 21%, CH
3The COOH volumetric concentration accounts for 33%, and all the other are H
2O, temperature is 18 ℃.
3. the back cleaning of polycrystalline silicon used for solar battery sheet as claimed in claim 1 is characterized in that:
A. with polysilicon chip through silicon chip making herbs into wool, diffusion, obtain the even diffusion region of 70ohm/Sq;
B. corrode with acid solution, in the acid solution: the HF volumetric concentration accounts for 3.1%, HNO again
3Volumetric concentration accounts for 20.3%, CH
3The COOH volumetric concentration accounts for 38%, and all the other are H
2O, temperature is 18 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102382375A CN101976700B (en) | 2010-07-28 | 2010-07-28 | Post-cleaning technology of silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102382375A CN101976700B (en) | 2010-07-28 | 2010-07-28 | Post-cleaning technology of silicon wafer |
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| CN101976700A CN101976700A (en) | 2011-02-16 |
| CN101976700B true CN101976700B (en) | 2011-12-07 |
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| CN2010102382375A Active CN101976700B (en) | 2010-07-28 | 2010-07-28 | Post-cleaning technology of silicon wafer |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586034A (en) * | 2011-12-30 | 2012-07-18 | 常州天合光能有限公司 | Cleaning fluid for adhering crystal bar and process for adhering bar by using cleaning fluid |
| CN102623558B (en) * | 2012-03-27 | 2014-07-16 | 山东力诺太阳能电力股份有限公司 | Process for preparing emitter without dead layer by felting after acid process |
| CN102703903A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Alkali texture making technology |
| CN102776515A (en) * | 2012-08-08 | 2012-11-14 | 泰通(泰州)工业有限公司 | Wet etching process for improving emitter square resistance |
| CN103394484B (en) * | 2013-08-02 | 2016-08-10 | 常州时创能源科技有限公司 | Cleaning after polysilicon solar cell silicon chip processed with acid floss |
| CN107170845A (en) * | 2017-05-12 | 2017-09-15 | 中国科学院宁波材料技术与工程研究所 | A kind of wet method prepares the pyramidal method of corners |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1042275A (en) * | 1984-09-04 | 1990-05-16 | 德克萨斯仪器股份有限公司 | Make the method for solar battery array |
| CN1334312A (en) * | 2000-07-25 | 2002-02-06 | 关东化学株式会社 | Polycrystalline silicon film surface treating solution and method for surface treatment of polycrystalline silicon film in said solution |
| CN101409313A (en) * | 2008-11-19 | 2009-04-15 | 张根发 | Method for preparing silicon solar battery pile face in magnetic field |
| CN101562207A (en) * | 2008-04-14 | 2009-10-21 | 黄麟 | Crystalline silicon solar battery |
-
2010
- 2010-07-28 CN CN2010102382375A patent/CN101976700B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1042275A (en) * | 1984-09-04 | 1990-05-16 | 德克萨斯仪器股份有限公司 | Make the method for solar battery array |
| CN1334312A (en) * | 2000-07-25 | 2002-02-06 | 关东化学株式会社 | Polycrystalline silicon film surface treating solution and method for surface treatment of polycrystalline silicon film in said solution |
| CN101562207A (en) * | 2008-04-14 | 2009-10-21 | 黄麟 | Crystalline silicon solar battery |
| CN101409313A (en) * | 2008-11-19 | 2009-04-15 | 张根发 | Method for preparing silicon solar battery pile face in magnetic field |
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| CN101976700A (en) | 2011-02-16 |
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Address after: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee after: TRINA SOLAR Co.,Ltd. Address before: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee before: trina solar Ltd. |
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Address after: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee after: trina solar Ltd. Address before: 213031 Tianhe Road 2, Xinbei Electronic Industrial Park, Changzhou, Jiangsu Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |