CN101409313A - Method for preparing silicon solar battery pile face in magnetic field - Google Patents
Method for preparing silicon solar battery pile face in magnetic field Download PDFInfo
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- CN101409313A CN101409313A CNA2008102029259A CN200810202925A CN101409313A CN 101409313 A CN101409313 A CN 101409313A CN A2008102029259 A CNA2008102029259 A CN A2008102029259A CN 200810202925 A CN200810202925 A CN 200810202925A CN 101409313 A CN101409313 A CN 101409313A
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Abstract
The invention discloses a method for preparing a texture of a silicon solar cell under a magnetic field. The method comprises the following technological steps: firstly, a polysilicon wafer is put into a texture preparation reactor with prepared acid reaction solution for reaction, and the texture preparation reactor is put in the magnetic field, wherein, the reaction solution is made from 0.05%-15% of nitric acid or chromic acid by mass, 1%-30% of hydrofluoric acid by mass and 1%-30% of phosphoric acid or acetic acid by mass; the temperature of the reaction solution is kept at 0-30 DEG C, and the polysilicon wafer is washed in 0.5%-3% sodium hydroxide solution for 1-5 minutes after reaction in the acid solution; secondly, the magnetic field is applied in the whole course of preparing the texture of the silicon solar cell, the magnetic field strength is kept at 0-10T, and the texture preparation time is 1-45 minutes. A compact and even texture can be grown on the surface of the polysilicon wafer by the method, thus realizing the high-efficiency and even production of the silicon solar cell texture by acid oxidants under the magnetic field.
Description
Technical field:
The present invention relates to prepare in the acid solution under a kind of magnetic field the method for the efficient matte of silicon solar cell, belong to technical field of inorganic material.
Background technology:
Solar energy is a kind of cleaning, pollution-free, inexhaustible natural energy resources, and the natural resources that the mankind depend on for existence almost all is transformed in solar energy, and it is an important technology basis that utilizes solar energy on a large scale that solar energy directly is converted to electric energy.Developing efficient from Bell Laboratory in 1954 is first polycrystalline silicon solar cell of 6%, solar cell market is with the speed increase in every year 35% until now, wherein the market occupancy volume of polycrystalline silicon solar cell is more than 50%, and because polycrystalline silicon solar cell is cheap, its market share is constantly soaring in recent years.In short half a century, solar cell has been finished the research of first generation crystal silicon cell, is in second generation hull cell research peak, and continues towards the effort of third generation high efficiency battery.Along with the exhaustion day by day of traditional energy and the continuous rising of oil price, and people are to the continuous lifting of its own existence environmental requirement, it is very urgent actively to seek new alternative energy source, and as free of contamination clean energy resource, solar cell will be developed rapidly.And as the crystal-silicon solar cell that occupies solar cell overwhelming majority market now, its technology of preparing is being represented the technology of preparing level of whole solar cell industry always.Especially in recent years, no matter be aspect reducing production costs, still aspect the lifting battery conversion efficiency, silicon solar cell preparation technology has obtained progress at full speed.How improving the silicon chip conversion efficiency is one of emphasis problem of solar cell research, the selection of polysilicon is to reduce one of effective means of solar energy power generating cost, is an important method that improves the solar cell conversion efficiency and reduce the reflection loss of sunlight on the polysilicon chip surface effectively.
In order to reduce the reflection of silicon face effectively, improve and fall into light effect, the matte preparation is a very feasible technology, polycrystalline silicon suede had become in recent years the focus of research both at home and abroad.Desirable polycrystalline silicon suede hemispheric for being similar to " depression ", the now existing multiple method for preparing polycrystalline silicon suede comprises the mechanical carving groove method, laser ablation method, reactive ion etching method.Though obtained success, raw material and equipment are all had higher requirements, be not suitable for large-scale industrialization production.Because it is simple that isotropism chemistry etch has technology, cheap price and excellent quality and and existing technology characteristics such as compatibility well, become the focus of people's research in recent years.Isotropism chemistry etch can form irregular " depression " at silicon face, and still the size of " depression " and shape are wayward, makes isotropism chemistry caustic solution be difficult to make high-quality matte.
In recent years, magnetic field intensity has been subjected to people's extensive attention above the application of the superconducting intense magnetic field of 10T.High-intensity magnetic field can suspend in high-intensity magnetic field as water, plastics, timber etc. so that the nonferromagnetic material also can demonstrate intrinsic magnetic properties because of its powerful magnetization.The object that acts on macroscopic view with the general magnetic field is different, and high-intensity magnetic field can be delivered to high-intensity magnetic energy the atomic scale of material, changes the behaviors such as arrangement, coupling and migration of atom, thereby the tissue and the performance of material produced far-reaching influence.In material preparation, form, size, distribution and orientation etc. in the magnetic field energy control material growth course, thus influence the institutional framework of material, the final new material that obtains to have premium properties.The technology not appearance still that in the acidic oxidation agent solution, prepares the efficient matte of polysilicon solar cell by the magnetization effect in magnetic field.
Summary of the invention:
The purpose of this invention is to provide the method for preparing the polysilicon solar cell matte under a kind of magnetic field in the acidic oxidation agent solution, can be by this method at the fine and close matte uniformly of polysilicon chip superficial growth, thus realize that the efficient of polycrystalline silicon solar battery suede evenly produces under the magnetic field.
Technical scheme of the present invention is as follows: a kind of method of preparing silicon solar battery pile face in magnetic field, and acidic oxidation thinner corroding method is at the fine and close matte uniformly of polysilicon chip superficial growth under the employing magnetic field, and this method has following processing step:
A. polysilicon chip is put into the matte preparation feedback device for preparing reactant liquor and made its reaction, simultaneously matte preparation feedback device is positioned in the magnetic field, the proportioning of described reactant liquor is: nitric acid or chromic acid mass percent are 0.05%～15%, the mass percent of hydrofluoric acid is 1%～30%, and the mass percent of phosphoric acid or acetic acid is 1%～30%; The temperature of reactant liquor remains on 0 ℃～30 ℃;
B. after polysilicon chip reacts in acid solution and finishes, in 0.5%～3% sodium hydroxide solution, cleaned 1～5 minute;
C. magnetic field puts on all stage of polysilicon solar cell matte preparation, and magnetic field intensity remains on below the 10T, matte preparation time 1～45 minute.
Further, described reactant liquor proportioning is: nitric acid mass percent 2%, and hydrofluoric acid mass percent 10%, acetic acid mass percent 10%, solution temperature are 20 ℃; NaOH mass percent 1%.
Chemical corrosion reaction mechanism of the present invention is: HNO
3Be a kind of oxidant, provide the hole, break the Si-H key of silicon face, make silicon oxidation become SiO to silicon face
2HF is as complexing agent, and dissolving is also removed SiO
2Layer generates complex compound H
2SiF
6Acetic acid or phosphoric acid are controlled corrosion rate as the catalyst and the buffer of corrosive liquid, do not influence the effect of surface wool manufacturing.Reaction equation is
Si+6HF+HNO
3→H
2SiF
6+HNO
2+H
2O+H
2↑
This reaction is exothermic reaction, and in the corrosion process, silicon chip surface can produce porous silicon layer, although it has low reflectivity, it has high resistance and high surface recombination rate, is not suitable for the production of solar cell, so use the NaOH solution removal.
The present invention is positioned over matte preparation feedback device in the magnetic field, the high purity polycrystalline silicon sheet is dipped in the acidic aqueous solution of pure nitric acid of electronics or chromic acid, accurately control cooler by computer and make solution maintain suitable temperature, because silicon and nitric acid reaction, so silicon chip surface is oxidized; Simultaneously, because the powerful effect in magnetic field, suitable magnetic field intensity can effectively be controlled nitric acid, hole, electronics and the hydrionic direction of motion, make hole, electronics and hydrogen ion move to silicon chip surface rapidly and uniformly, react with silicon chip, the acid solution of low concentration also makes the bubble of silicon chip surface hightail silicon chip simultaneously, thereby has realized that the efficient of polysilicon solar cell matte evenly produces under the magnetic field.
Place high-intensity magnetic field to carry out the preparation process of polysilicon solar cell matte, utilize high-intensity magnetic field to the extremely strong magnetizing force of material, magnetic energy effect and to the Lorentz force of moving charge, the activation and the disassociation of energy intensified response thing, promote the interaction between the reaction particles such as silicon atom, nitric acid, hole, electronics, hydrofluoric acid, moved to silicon chip surface rapidly in nitric acid, hole.In the matte preparation process, " depression " be evenly growth rapidly, the growth course of influence and control polycrystalline silicon solar battery suede.Under the powerful effect in magnetic field, solution has formed desirable non-preferential etch to silicon, has caused the formation of perfect sphere shape etch pit.The polysilicon solar cell matte of preparing under the magnetic field, the quality of matte has obtained obvious improvement, " depression " even compact, surface reflectivity reduces, falling into light effect increases, reduce the growth time of matte, the growth rate of raising matte simultaneously, lower surface reflectivity has effectively improved the conversion efficiency of solar cell.
Description of drawings:
Fig. 1 is a matte preparation feedback device structural representation of the present invention;
The drawing reference numeral explanation:
The 1-texturing slot, 2-sample basket, 3-underframe, 4-thermocouple, 5-control cubicle, 6-texturing slot lid, 7-high-intensity magnetic field device, 8-cooling system.
Embodiment:
The present invention adopts the preparing polysilicon solar battery suede in magnetic field technology, thereby prepares high-quality, uniform matte.Raw material is pure nitric acid of electronics or chromic acid, the hydrofluoric acid that electronics is pure, and phosphoric acid that electronics is pure or acetic acid, polysilicon chip, the NaOH that electronics is pure adopts the band computer accurately to control the texturing slot of cooler.
At first, feed a certain amount of deionized water in the matte preparation feedback device,, add a certain amount of nitric acid or chromic acid, hydrofluoric acid, phosphoric acid or acetic acid then just above the height of silicon chip.Wherein nitric acid or the chromic acid mass percent in reactant liquor remains on 0.05%～15%, and the mass percent of hydrofluoric acid in reactant liquor remains on 1%～30%, and phosphoric acid or the acetic acid mass percent in reactant liquor remains on 1%～30%;
Then polysilicon chip is put into the texturing slot 1 for preparing reactant liquor, again texturing slot 1 is positioned in the magnetic field, under magnetic field condition, magnetic field intensity remains on below the 10T, adopt magnetic field to cool off growth pattern down and prepare solar battery suede, the temperature of solution remains between 0 ℃～30 ℃, matte preparation time 1～45 minute.After reaction finished in acid solution, polysilicon chip cleaned in 0.5%～3% sodium hydroxide solution 1～5 minute.Concrete experimental provision can be referring to accompanying drawing 1.
Characteristics of the present invention are preparation polysilicon solar cell mattes in magnetic field, be raw material with the polysilicon chip in the inventive method, nitric acid that electronics is pure or chromic acid, phosphoric acid or acetic acid that hydrofluoric acid, electronics that electronics is pure are pure are reactant, under the effect in magnetic field, make the polysilicon chip surface in the texturing slot form uniform matte, " depression " of the even compact of promptly growing.
The inventive method can prepare " depression " matte of high-quality, antiradar reflectivity fast, and can in time remove the bubble of silicon chip surface, is fit to fine and close, the evenly making of " depression " matte.Evenly, surface reflectivity is low with the polycrystalline silicon suede of the inventive method preparation is fine and close, and sunken light effect significantly increases, and has effectively improved the electricity conversion of solar cell, can guarantee stablizing of the polysilicon solar cell matte quality for preparing simultaneously.
Now in conjunction with the accompanying drawings embodiment is described further:
After the ultrasonic cleaning of polysilicon chip process deionized water, put into then and carry out the matte preparation on the sample basket 2 of texturing slot shown in Figure 11, simultaneously whole texturing slot device is positioned in the high-intensity magnetic field device 7 and carries out, and sample basket 2 is in the centre position of high-intensity magnetic field device 7, and cryogenic magnetic field is adjustable continuously.As shown in Figure 1, sample basket 2 is positioned on the underframe 3 in the texturing slot 1, and the temperature of solution in the texturing slot 1 can be accurately controlled in cooling system 8 and thermocouple 4 combinations.The employing polysilicon chip is a raw material, and hydrofluoric acid that nitric acid that electronics is pure or chromic acid, electronics are pure and electronics pure phosphoric acid or acetic acid are reactant.The concentration of above-mentioned raw materials in each embodiment is as shown in the table, and thermocouple 4 places underframe 3 belows, by controller 5 solution temperature is controlled.Magnetic field intensity remains on below the 10T, suitably regulates high-intensity magnetic field device 7 and obtains suitable magnetic field intensity, makes the matte preparation of polysilicon in acid solution carry out smoothly.
| Embodiment | Concentration of nitric acid (mass percent) | Chromic acid concentration (mass percent) | Hydrofluoric acid concentration (mass percent) | Phosphoric acid concentration (mass percent) | Acetate concentration (mass percent) | Naoh concentration (mass percent) | Solution temperature (℃) |
| 1 | 0.05％ | 1％ | 1％ | 0.5％ | 25 | ||
| 2 | 2％ | 10％ | 10％ | 1％ | 20 | ||
| 3 | 5％ | 15％ | 15％ | 2％ | 15 | ||
| 4 | 10％ | 20％ | 20％ | 2.5％ | 10 | ||
| 5 | 15％ | 30％ | 30％ | 3％ | 5 | ||
| 6 | 0.05％ | 1％ | 1％ | 0.5％ | 25 | ||
| 7 | 1％ | 10％ | 10％ | 1％ | 20 | ||
| 8 | 5％ | 15％ | 15％ | 2％ | 15 | ||
| 9 | 10％ | 20％ | 20％ | 2.5％ | 10 | ||
| 10 | 15％ | 30％ | 30％ | 3％ | 5 | ||
| 11 | 0.05％ | 1％ | 1％ | 0.5％ | 25 | ||
| 12 | 1％ | 5％ | 5％ | 1％ | 20 | ||
| 13 | 5％ | 15％ | 15％ | 2％ | 15 | ||
| 14 | 10％ | 20％ | 20％ | 2.5％ | 10 | ||
| 15 | 15％ | 30％ | 30％ | 3％ | 5 | ||
| 16 | 0.05％ | 1％ | 1％ | 0.5％ | 25 | ||
| 17 | 1％ | 5％ | 5％ | 1％ | 20 | ||
| 18 | 5％ | 15％ | 15％ | 2％ | 15 | ||
| 19 | 10％ | 20％ | 20％ | 2.5％ | 10 | ||
| 20 | 15％ | 30％ | 30％ | 3％ | 5 |
The polycrystalline silicon suede sample that makes by the various embodiments described above is adopted observation by light microscope, and matte " pyramid " is fine and close and size is even.Carry out the matte albedo measurement by spectrophotometer, its reflectivity is lower than 8%.After making solar cell, meter Mingguang City photoelectric transformation efficiency can improve more than 5%, shows that the polysilicon solar cell matte of this method preparation is high-quality matte.
Claims (2)
1. the method for a preparing silicon solar battery pile face in magnetic field is characterized in that: adopt that acidic oxidation thinner corroding method is at the matte of polysilicon chip superficial growth densification under the magnetic field, this method has following processing step:
A. polysilicon chip is put into the matte preparation feedback device for preparing reactant liquor and made its reaction, simultaneously matte preparation feedback device is positioned in the magnetic field, the proportioning of described reactant liquor is: the mass percent of nitric acid or chromic acid is 0.05%～15%, the mass percent of hydrofluoric acid is 1%～30%, and the mass percent of acetic acid or phosphoric acid is 1%～30%; The temperature of reactant liquor remains on 0 ℃～30 ℃;
B. after polysilicon chip reacts in acid solution and finishes, in 0.5%～3% sodium hydroxide solution, cleaned 1～5 minute;
C. magnetic field puts on all stage of polysilicon solar cell matte preparation, and magnetic field intensity remains on below the 10T, matte preparation time 1～45 minute.
2, the method for preparing silicon solar battery pile face in magnetic field according to claim 1 is characterized in that described reactant liquor proportioning is: nitric acid mass percent 2%, and hydrofluoric acid mass percent 10%, acetic acid mass percent 10%, solution temperature are 20 ℃; NaOH mass fraction 1%.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101866842A (en) * | 2010-05-07 | 2010-10-20 | 武汉理工大学 | Method of performing electrochemical corrosion with the help of silicon-based three-dimensional structure magnetic field |
| CN101931030A (en) * | 2010-07-14 | 2010-12-29 | 江苏林洋太阳能电池及应用工程技术研究中心有限公司 | Preparation technology of nano-modified polysilicon solar cell with high efficiency and low cost |
| CN101976700A (en) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | Post-cleaning technology of silicon wafer |
| CN102157602A (en) * | 2010-02-11 | 2011-08-17 | 上海思恩电子技术有限公司 | Method for carrying out wet-method phosphorous diffusion and texturing on substrate and acid solution for texturing |
| CN102181936A (en) * | 2010-10-26 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method and corrosive liquid for manufacturing multicrystalline silicon texture |
| CN102181937A (en) * | 2010-11-24 | 2011-09-14 | 江阴浚鑫科技有限公司 | Activating method of corrosive liquid for manufacturing solar polycrystalline silicon wool surface |
| CN103205752A (en) * | 2013-04-09 | 2013-07-17 | 中国电子科技集团公司第十一研究所 | Etching solution and etching method |
| CN103451654A (en) * | 2012-05-28 | 2013-12-18 | 河南师范大学 | Method for preparing vertical silicon-based three-dimensional structure |
| CN103633193A (en) * | 2013-11-05 | 2014-03-12 | 上海交通大学 | Microstructure light trapping method for silicon-based thin film solar cell |
| TWI476942B (en) * | 2011-05-31 | 2015-03-11 | Motech Suzhou Renewable Energy Co Ltd | Texturing method for mono-like silicon chip |
| CN106711248A (en) * | 2016-12-03 | 2017-05-24 | 河北工业大学 | Method for reducing surface reflectivity of ingot-cast polycrystalline silicon wafer |
| CN114420774A (en) * | 2021-11-29 | 2022-04-29 | 江苏科来材料科技有限公司 | Texturing process of crystalline silicon battery |
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2008
- 2008-11-19 CN CN200810202925A patent/CN100583465C/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102157602A (en) * | 2010-02-11 | 2011-08-17 | 上海思恩电子技术有限公司 | Method for carrying out wet-method phosphorous diffusion and texturing on substrate and acid solution for texturing |
| CN101866842B (en) * | 2010-05-07 | 2011-12-14 | 武汉理工大学 | Method of performing electrochemical corrosion with the help of silicon-based three-dimensional structure magnetic field |
| CN101866842A (en) * | 2010-05-07 | 2010-10-20 | 武汉理工大学 | Method of performing electrochemical corrosion with the help of silicon-based three-dimensional structure magnetic field |
| CN101931030A (en) * | 2010-07-14 | 2010-12-29 | 江苏林洋太阳能电池及应用工程技术研究中心有限公司 | Preparation technology of nano-modified polysilicon solar cell with high efficiency and low cost |
| CN101976700A (en) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | Post-cleaning technology of silicon wafer |
| CN101976700B (en) * | 2010-07-28 | 2011-12-07 | 常州天合光能有限公司 | Post-cleaning technology of silicon wafer |
| CN102181936A (en) * | 2010-10-26 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method and corrosive liquid for manufacturing multicrystalline silicon texture |
| CN102181937B (en) * | 2010-11-24 | 2012-12-12 | 浚鑫科技股份有限公司 | Activating method of corrosive liquid for manufacturing solar polycrystalline silicon wool surface |
| CN102181937A (en) * | 2010-11-24 | 2011-09-14 | 江阴浚鑫科技有限公司 | Activating method of corrosive liquid for manufacturing solar polycrystalline silicon wool surface |
| TWI476942B (en) * | 2011-05-31 | 2015-03-11 | Motech Suzhou Renewable Energy Co Ltd | Texturing method for mono-like silicon chip |
| CN103451654A (en) * | 2012-05-28 | 2013-12-18 | 河南师范大学 | Method for preparing vertical silicon-based three-dimensional structure |
| CN103205752A (en) * | 2013-04-09 | 2013-07-17 | 中国电子科技集团公司第十一研究所 | Etching solution and etching method |
| CN103205752B (en) * | 2013-04-09 | 2016-07-13 | 中国电子科技集团公司第十一研究所 | A kind of corrosive liquid and caustic solution |
| CN103633193A (en) * | 2013-11-05 | 2014-03-12 | 上海交通大学 | Microstructure light trapping method for silicon-based thin film solar cell |
| CN106711248A (en) * | 2016-12-03 | 2017-05-24 | 河北工业大学 | Method for reducing surface reflectivity of ingot-cast polycrystalline silicon wafer |
| CN106711248B (en) * | 2016-12-03 | 2018-07-24 | 河北工业大学 | A method of reducing ingot casting polysilicon chip surface reflectivity |
| CN114420774A (en) * | 2021-11-29 | 2022-04-29 | 江苏科来材料科技有限公司 | Texturing process of crystalline silicon battery |
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