CN101339964A - Selective dispersing method of crystalline silicon solar cell - Google Patents
Selective dispersing method of crystalline silicon solar cell Download PDFInfo
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- CN101339964A CN101339964A CNA2008101442884A CN200810144288A CN101339964A CN 101339964 A CN101339964 A CN 101339964A CN A2008101442884 A CNA2008101442884 A CN A2008101442884A CN 200810144288 A CN200810144288 A CN 200810144288A CN 101339964 A CN101339964 A CN 101339964A
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- silicon solar
- solar cell
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- diffusion
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to the technical field of the production of a crystalline silicon solar cell, in particular to a selective diffusion method of the crystalline silicon solar cell. The method comprises the following steps: firstly, a phosphorous paste is selectively printed on the surface of a crystalline silicon chip at certain interval and is dried, then diffusion is carried out, phosphor silicate glass is removed, and then diffusion is carried out again. A selective emitter structure of the solar cell can be conveniently obtained by the method, and the production method is simple and is easy to realize, has little pollution and is applicable to industrialization.
Description
Technical field
The present invention relates to the selective dispersing method of production of crystalline silicon solar batteries technical field, particularly a kind of crystal silicon solar energy battery.
Background technology
Crystal silicon solar energy battery has occupied the share more than 90% in photovoltaic market, how further to raise the efficiency, and reducing cost is the elementary object of domestic and international crystal silicon solar energy battery research field.
Realize that on silicon chip selective emitting electrode structure is that the p-n junction crystal silicon solar energy battery is realized one of high-efficiency method.So-called selective emitting electrode structure has two features: 1) under gate electrode line and near the highly doped dark diffusion region of formation; 2) form low-doped shallow diffusion region in other zones.The key that realizes selective emitting electrode structure is how to form top said two zones.The method that realizes selective emission area has a variety of, and modal have photoetching, a lbg.But these methods are too complicated for the solar cell manufacturing, can only be applied in laboratory or the small-scale production, are difficult to promote in the industrialization of conventional batteries is produced.
Summary of the invention
The objective of the invention is to provide a kind of method that realizes the crystal silicon solar cell selective diffusion, this method can improve the efficient of crystal silicon solar energy battery, is applicable to industrialization production.
The technical solution used in the present invention is: a kind of selective dispersing method of crystal silicon solar energy battery, at first the phosphorus slurry is selected to be printed on the crystal silicon chip surface according to certain intervals, and the oven dry slurry spreads then, dephosphorization silex glass, diffusion again.
Be diffused as High temperature diffusion.
The phosphorus slurry selects the position of printing identical with the printing position of front electrode according to certain intervals.
The invention has the beneficial effects as follows: can obtain the solar cell selective diffusion structure easily according to the method described above, method is simple, easily realizes, pollutes for a short time, is suitable for industrialization production.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is a selectivity diffusion structure schematic diagram of the present invention.
Fig. 2 is a process chart of the present invention.
Among the figure: 1. silicon chip, 2. high-doped zone, 3. doped regions, 4. phosphorus slurry.
Embodiment
A kind of selective dispersing method of crystal silicon solar energy battery at first selects to be printed on crystal silicon chip 1 surface with phosphorus slurry 4 according to certain intervals as illustrated in fig. 1 and 2, and silicon chip 1 surface has been carried out cleaning and texturing and handled, dry slurry then, once spread dephosphorization silex glass, diffusion again.Be diffused as High temperature diffusion.
The printing position of front electrode and phosphorus slurry 4 selects the printing position identical according to certain intervals, is about to high concentration phosphorus slurry 4 and is printed onto silicon chip 1 surface as the electrode grid wire.Then this silicon chip 1 is put into diffusion furnace and spread, be used for starching 4 Printing Zones and form high-doped zone 2 at phosphorus.In this step diffusion, the zone of printing phosphorus slurry 4 can form the silicon phosphorus glass, and the silicon phosphorus glass can have the effect that slackens to the diffusion of past silicon chip 1 depths of phosphorus atoms, is unfavorable for next step diffusion technology.So after once spreading, need to remove the silicon phosphorus glass that silicon chip 1 surface forms.Removing the silicon phosphorus glass can use chemical corrosion as using hydrofluoric acid.After removing the silicon phosphorus glass, carry out the secondary diffusion, be used for forming doped regions 3 in non-printing.
Silicon chip 1 removes the silicon phosphorus glass after finishing the selectivity diffusion once more, carves the limit then, plating silicon nitride, antireflective coating, and printed back electrode, printing aluminium back of the body field, the printing front electrode, sintering is made the battery finished product.
Claims (3)
1, a kind of selective dispersing method of crystal silicon solar energy battery is characterized in that: at first phosphorus slurry (4) is selected to be printed on crystal silicon chip (1) surface according to certain intervals, the oven dry slurry spreads then, and the dephosphorization silex glass spreads again.
2, the selective dispersing method of crystal silicon solar energy battery according to claim 1 is characterized in that: the described High temperature diffusion that is diffused as.
3, the selective dispersing method of crystal silicon solar energy battery according to claim 1 is characterized in that: described phosphorus slurry (4) selects the position (4) of printing identical with the printing position of front electrode according to certain intervals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101442884A CN101339964A (en) | 2008-07-31 | 2008-07-31 | Selective dispersing method of crystalline silicon solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2008101442884A CN101339964A (en) | 2008-07-31 | 2008-07-31 | Selective dispersing method of crystalline silicon solar cell |
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| CN101339964A true CN101339964A (en) | 2009-01-07 |
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| CNA2008101442884A Pending CN101339964A (en) | 2008-07-31 | 2008-07-31 | Selective dispersing method of crystalline silicon solar cell |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101872808A (en) * | 2010-06-04 | 2010-10-27 | 珈伟太阳能(武汉)有限公司 | Manufacturing method of selective emitter of crystalline silicon solar cell |
| CN102097525A (en) * | 2010-09-28 | 2011-06-15 | 常州天合光能有限公司 | Method for preparing N-type solar cell by one-step diffusion |
| CN102148283A (en) * | 2010-09-28 | 2011-08-10 | 常州天合光能有限公司 | Method for preparing N-type solar battery by one-step diffusion |
| CN102054898B (en) * | 2009-11-06 | 2012-10-31 | 国立清华大学 | Manufacture procedure of selective emitter solar battery |
| CN113571602A (en) * | 2021-07-23 | 2021-10-29 | 横店集团东磁股份有限公司 | Secondary diffusion selective emitter and preparation method and application thereof |
-
2008
- 2008-07-31 CN CNA2008101442884A patent/CN101339964A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102054898B (en) * | 2009-11-06 | 2012-10-31 | 国立清华大学 | Manufacture procedure of selective emitter solar battery |
| CN101872808A (en) * | 2010-06-04 | 2010-10-27 | 珈伟太阳能(武汉)有限公司 | Manufacturing method of selective emitter of crystalline silicon solar cell |
| CN102097525A (en) * | 2010-09-28 | 2011-06-15 | 常州天合光能有限公司 | Method for preparing N-type solar cell by one-step diffusion |
| CN102148283A (en) * | 2010-09-28 | 2011-08-10 | 常州天合光能有限公司 | Method for preparing N-type solar battery by one-step diffusion |
| CN113571602A (en) * | 2021-07-23 | 2021-10-29 | 横店集团东磁股份有限公司 | Secondary diffusion selective emitter and preparation method and application thereof |
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Open date: 20090107 |