CN103762279B - The manufacture method, N-type silicon solar cell and preparation method thereof of the selectivity back surface field of N-type silicon solar cell - Google Patents
The manufacture method, N-type silicon solar cell and preparation method thereof of the selectivity back surface field of N-type silicon solar cell Download PDFInfo
- Publication number
- CN103762279B CN103762279B CN201410046279.7A CN201410046279A CN103762279B CN 103762279 B CN103762279 B CN 103762279B CN 201410046279 A CN201410046279 A CN 201410046279A CN 103762279 B CN103762279 B CN 103762279B
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- phosphorus
- back surface
- manufacture method
- surface field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 127
- 239000010703 silicon Substances 0.000 title claims abstract description 127
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title abstract description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 78
- 239000011574 phosphorus Substances 0.000 claims abstract description 78
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 78
- 238000009792 diffusion process Methods 0.000 claims abstract description 45
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 42
- 230000007480 spreading Effects 0.000 claims abstract description 36
- 238000003892 spreading Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 239000002002 slurry Substances 0.000 claims description 45
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 42
- 229910021529 ammonia Inorganic materials 0.000 claims description 21
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 13
- 239000012670 alkaline solution Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 8
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 claims description 3
- 235000012538 ammonium bicarbonate Nutrition 0.000 claims description 3
- 239000001099 ammonium carbonate Substances 0.000 claims description 3
- 235000012501 ammonium carbonate Nutrition 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract description 5
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 230000007423 decrease Effects 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 229910052709 silver Inorganic materials 0.000 description 11
- 239000004332 silver Substances 0.000 description 11
- 210000002268 wool Anatomy 0.000 description 11
- 238000007650 screen-printing Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 229910019213 POCl3 Inorganic materials 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 235000008216 herbs Nutrition 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 229910002651 NO3 Inorganic materials 0.000 description 4
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000011017 operating method Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of manufacture method of selectivity back surface field of N-type silicon solar cell, N-type silicon solar cell and preparation method thereof.This manufacture method comprises: S1, slot on the precalculated position at the silicon chip substrate back side depositing antireflective coating, to form phosphorus spreading grooves district; And S2, on the described silicon chip substrate back side with phosphorus spreading grooves district, carry out phosphorus diffusion, to form heavy doping in Shi Lin spreading grooves district, thus form described selectivity back surface field.The present invention does not need additionally to make phosphorus diffusion impervious layer, only utilize the antireflective coating that deposition is formed, just phosphorus source can be stoped to not needing heavily doped regional diffusion when the high temperature phosphorous diffusion making selectivity back surface field, only a pyroprocess just can form the different selectivity back surface field of doping content at the back side of N-type silicon chip substrate, avoid the step at high temperature making oxide layer, decrease damage, reduce energy consumption and cost, improve the photoelectric conversion efficiency of battery.
Description
Technical field
The present invention relates to technical field of solar batteries, in particular to a kind of manufacture method, N-type silicon solar cell and preparation method thereof of selectivity back surface field of N-type silicon solar cell.
Background technology
As the new forms of energy of clean environment firendly, the application of solar cell is more and more universal.But because the cost of this battery is higher, limit the universal fast of it.In order to reduce cost of manufacture, improving the conversion efficiency of solar cell, needing constantly to research and develop new technology.
Current most of photovoltaic enterprise all uses P-type silicon manufacture of materials solar cell.The shortcoming of P-type silicon battery is that the efficiency of battery can decay gradually along with the increase of light application time, this mainly to combine with the oxygen atom in substrate produce the right result of boron oxygen owing to mixing boron atom in P-type silicon substrate, boron oxygen is to the effect playing carrier traps, minority carrier lifetime is reduced, thus result in the decay of battery efficiency.And N-type silicon substrate has high minority carrier lifetime and the insensitivity to some metal impurities, so N-type silion cell has the stability that high efficiency is become reconciled.
Selectivity aluminum back surface field realizes one of high efficiency method in P-N junction crystal-silicon solar cell production technology.Selectivity aluminum back surface field has two features: 1) the region that gate electrode line covers and near formation high-doped zone, easily ohmic contact is formed when doing electrode, and the volume resistance in this region is less, thus reduce the series resistance of solar cell, improve the fill factor, curve factor F.F. of battery; 2) chlamydate region (active region) is not had to form doped regions at gate electrode line, good surface passivation can be carried out, reduce the surface recombination probability of minority carrier, thus reduce the reverse saturation current of battery, improve open circuit voltage Voc and the short circuit current Isc of battery.Meanwhile, the horizontal n+/n height knot formed in doped regions and high-doped zone intersection can improve the collection rate of photo-generated carrier, thus improves the short circuit current Isc of battery.In a word, selectivity aluminum back surface field can improve open circuit voltage Voc, short circuit current Isc and the fill factor, curve factor F.F. of solar cell, thus makes battery obtain high photoelectric conversion efficiency.
Current selectivity aluminum back surface field is generally all applied in the manufacturing process of P-type silicon battery, commonly to be produced as follows: oxide mask One Diffusion Process method, after making herbs into wool, by the oxide layer of heat growth method growth layer, then slot in oxide layer according to the figure of silk screen printing front electrode, then clean laser damage layer with weak base.When phosphorus spreads, there is no slot area due to the barrier effect formation doped regions of oxide layer, the formation high-doped zone, region of fluting.The preparation method of above-mentioned selectivity back surface field at high temperature prepares oxide layer due to needs, experience pyroprocess is needed again during phosphorus diffusion afterwards, therefore the mode of above-mentioned employing oxide layer is prepared selectivity back surface field and is made silicon chip experience high-temperature oxydation and high temperature phosphorous to spread twice pyroprocess, especially in high-temperature oxidation process, some impurity defects in silicon chip can be activated, reduce minority carrier life time, require higher to Si wafer quality.
Therefore, how the focus that selectivity back surface field becomes research is at present formed when preparing N-type silicon chip.
Summary of the invention
The present invention aims to provide a kind of manufacture method, N-type silicon solar cell and preparation method thereof of N-type silicon solar cell selectivity back surface field, barrier layer when utilizing antireflective coating to spread as phosphorus in the manufacture method of this selectivity back surface field, simplify technique, improve efficiency.
To achieve these goals, according to an aspect of the present invention, provide a kind of manufacture method of selectivity back surface field of N-type silicon solar cell, comprise the following steps: S1, to slot on the precalculated position at the silicon chip substrate back side depositing antireflective coating, to form phosphorus spreading grooves district; And S2, on the silicon chip substrate back side with phosphorus spreading grooves district, carry out phosphorus diffusion, to form heavy doping in Shi Lin spreading grooves district, thus form selectivity back surface field.
Further, corrosivity slurry is adopted to slot on the precalculated position at the silicon chip substrate back side depositing antireflective coating.
Further, the step adopting corrosivity slurry to carry out slotting comprises: S11, by silk screen print method corrosivity starched predetermined temperature and be incubated; And S13, silicon chip is cleaned, dry, form phosphorus spreading grooves district.
Further, weakly alkaline solution is adopted to clean silicon chip in step S13.
Further, weakly alkaline solution comprise in ammonia spirit, potassium hydroxide solution, ammonium bicarbonate soln and sal volatile one or more, preferably, weakly alkaline solution is ammonia spirit, and the mass concentration of ammonia spirit is 2% ~ 10%.
Further, precalculated position is position corresponding with metal electrode on the silicon chip substrate back side.
Further, in step s 2, POCl is adopted
3carry out phosphorus diffusion as phosphorus source, the temperature of phosphorus diffusion is 810 DEG C ~ 870 DEG C, and the time of diffusion is 5 ~ 20 minutes, POCl
3flow be 200 ~ 800sccm.
Further, adopt laser to slot on the precalculated position of antireflective coating, the power of laser is 0.5 ~ 10W, and pulse duration is 100ps ~ 500ns, and wavelength is 300 ~ 1600nm, and frequency is 100Hz ~ 200KHz, and the diameter of hot spot is 5 ~ 100 μm.
According to a further aspect in the invention, provide a kind of manufacture method of N-type solar cell, be included in deposit antireflective coating the silicon chip substrate back side on form selectivity back surface field, wherein, selectivity back surface field is adopt the manufacture method of the selectivity back surface field of any one N-type silicon solar cell above-mentioned to be made.
According to another aspect of the invention, provide a kind of N-type silicon solar cell, N-type silicon solar cell is adopt any one the manufacture method of N-type solar cell above-mentioned to be made.
Apply technical scheme of the present invention, by slotting on the precalculated position of N-type silicon chip substrate depositing antireflective coating, and carry out heavy doping in phosphorus spreading grooves district, thus define selectivity back surface field.Compared with the barrier layer of preparing in prior art when oxide layer spreads as phosphorus, the present invention does not need additionally to make phosphorus diffusion impervious layer, only utilize the antireflective coating that when making N-type silicon solar cell, deposition is formed, just phosphorus source can be stoped not need heavily doped regional diffusion to other when the high temperature phosphorous diffusion making selectivity back surface field, and then prepared the selectivity back surface field with high-doped zone and doped regions structure, substantially increase the photoelectric conversion efficiency of battery.This manufacture method does not need at high temperature to make oxide layer just can form the different selectivity back surface field of doping content at the back side of N-type substrate silicon chip, and then decreases damage, reduces energy consumption and production cost, improves production efficiency, be suitable for large-scale production.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows according to making the process chart with the N-type silicon solar cell of selectivity back surface field in a kind of exemplary embodiment of the present invention.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the present invention in detail in conjunction with the embodiments.
Need extra making barrier layer when making selectivity back surface field to solve in prior art to such an extent as to adds additional pyroprocess, easily cause the problem that in silicon chip, impurity defect and cost increase, the invention provides a kind of manufacture method of selectivity back surface field of N-type silicon solar cell, comprise the following steps: S1, deposit antireflective coating the precalculated position at the silicon chip substrate back side fluting, to form phosphorus spreading grooves district; And S2, on the silicon chip substrate back side with phosphorus spreading grooves district, carry out phosphorus diffusion, to form heavy doping in Shi Lin spreading grooves district, thus form selectivity back surface field.
Form phosphorus spreading grooves district by carrying out fluting on the precalculated position of N-type silicon chip substrate depositing antireflective coating, and carry out heavy doping in phosphorus spreading grooves district, thus obtain selectivity back surface field.Compared with the barrier layer of preparing in prior art when oxide layer spreads as phosphorus, the present invention does not need additionally to make phosphorus diffusion impervious layer, only utilize the antireflective coating that when making N-type silicon solar cell, deposition is formed, just phosphorus source can be stoped not need heavily doped regional diffusion to other when the high temperature phosphorous diffusion making selectivity back surface field, and then prepared the selectivity back surface field with high-doped zone and doped regions structure, substantially increase the photoelectric conversion efficiency of battery.This manufacture method is without the need to making the pyroprocess of mask specially, just can form the different selectivity back surface field of doping content at the back side of N-type substrate silicon chip, the damage caused when at high temperature making oxide layer when avoiding phosphorus diffusion in prior art, reduce energy consumption, thus production cost is reduced, improve production efficiency, be suitable for large-scale production.
Precalculated position in the present invention refers to the region covered below metal electrode, by carrying out heavy doping below metal electrode, and light dope is carried out in other regions, surface recombination can be reduced, improve the inactivating performance that phosphorus spreads the back surface field formed, thus obtain higher open circuit voltage and short circuit current.
After antireflective coating is set, in order to make phosphorus source can carry out doping diffusion in specific region, region to be adulterated on antireflective coating is needed to slot.The mode of wherein slotting comprises a variety of, a preferred embodiment of the invention, adopts corrosivity slurry to slot in the precalculated position at the silicon chip substrate back side depositing antireflective coating.Employing corrosivity slurry carries out slotting and does not need to use large-scale instrument and equipment, easily integrated compared with the prior art, does not also need to purchase new equipment when printing and chemical cleaning.
Particularly, the step adopting corrosivity slurry to carry out slotting comprises: S11, be printed on the precalculated position of antireflective coating by silk screen print method by corrosivity slurry; S12, the silicon chip being printed with corrosivity slurry is heated to predetermined temperature and is incubated; And S13, silicon chip is cleaned, dry, form phosphorus spreading grooves district.Preferably, predetermined temperature is 200 ~ 350 DEG C, is incubated 1 ~ 5 minute.
First the position of printing electrode is determined, then the antireflective coating accordingly in silicon chip substrate back surface field adopt screen printing technique print one deck corrosivity slurry, wherein the pattern of silk screen is corresponding with silk screen used during type metal slurry in future, better to ensure the selectivity back of the body field structure formed, improve the conversion efficiency of solar cell largely.Antireflective coating generally adopts silicon nitride film, by the silicon chip heating after silk screen printing, makes to be positioned at corrosivity slurry on antireflective coating surface and antireflective coating reacts by heating, and then is eroded by the antireflective coating corresponding to metal grid lines district.Wherein the temperature of heating is controlled to be 200 DEG C ~ 350 DEG C, its objective is the reaction speed accelerating slurry and silicon nitride, enhance productivity, if the temperature of heating is lower than 200 DEG C, then reaction rate can be made comparatively slow, affect output; If the temperature of heating is higher than 350 DEG C, then reaction can be made too violent, or the too fast drying of corrosive slurry and can not fully with silicon nitride reaction.Therefore, through considering, the temperature of heating controls to keep 1 ~ 5 minute within the scope of said temperature by the present invention, can obtain the phosphorus spreading grooves district of the degree of depth and size uniformity.After silicon chip prepares phosphorus spreading grooves district, the silicon chip after drying is placed in diffusion furnace, passes into the diffusion of phosphorus source, form selectivity back surface field.
Wherein precalculated position is position corresponding with metal electrode on the silicon chip substrate back side, and shape and the position in the phosphorus spreading grooves district namely formed after printing are consistent with back up metal electrode pattern.Preferably, corrosivity slurry is phosphoric acid slurry, preferably adopts the Smart3000 that German Merck company produces.
After etching, carry out silicon chip cleaning removing corrosive slurry and the reacted product of antireflective coating and after-etching slurry, on silicon chip, just define the phosphorus spreading grooves district for phosphorus diffusion like this.Preferably, weakly alkaline solution is adopted to clean silicon chip in step S13.Weakly alkaline solution is one or more in ammoniacal liquor, KOH solution, ammonium bicarbonate soln and sal volatile, and preferably, weakly alkaline solution is ammonia spirit, and the mass concentration of ammonia spirit is 2% ~ 10%.The present invention preferably adopts ammonia spirit to clean silicon chip, but be not limited thereto, as long as the reactant generated after corrosive slurry and antireflective coating can being reacted and the corrosive slurry remained on silicon chip thoroughly wash, preferred employing ammonia spirit cleaning, mainly to consider in its alkalescent and ammonia spirit not metal ion, be conducive to the removal of corrosive slurry, and other foreign ion can not be introduced, if introduce other foreign ion, the problems such as PID can be caused.
Circulate for the ease of operation and carry out phosphorus diffusion, need the silicon chip after to cleaning to dry, preferably, the bake out temperature in step S13 is 50 ~ 90 DEG C, and the time of oven dry is 10 ~ 60s.Silicon chip after cleaning is placed within the scope of said temperature and dries, avoid antireflective coating and be damaged.
After step to be dried completes, there is the silicon chip of spreading grooves to be placed in diffusion furnace preparation and carry out phosphorus diffusion, a preferred embodiment of the invention, in step s 2, adopt POCl
3carry out phosphorus diffusion as phosphorus source, the temperature of phosphorus diffusion is 810 ~ 870 DEG C, and the time of diffusion is 5 ~ 20 minutes, and the flow of POCl3 is 200 ~ 800sccm.The temperature and time that phosphorus spreads is controlled in above-mentioned scope, can ensure that phosphorus fully spreads in silicon chip inside, form good selectivity back surface field, the damage of silicon chip and antireflective coating can not be caused again.
Except adopting corrosivity slurry and slotting, according to another kind of exemplary embodiment of the present invention, laser is adopted to slot to form phosphorus spreading grooves district on the precalculated position of the antireflective coating of N-type silicon chip.Preferably, the power of laser is 0.5 ~ 10W, and pulse duration is 100ps ~ 500ns, and wavelength is 300 ~ 1600nm, and frequency is 100Hz ~ 200KHz, and the diameter of hot spot is 5 ~ 100 μm.
The shape in the phosphorus spreading grooves district set by the present invention can be circular hole, rectangular or line style, and wherein linear shape can be straight line also can be curve.
According to a further aspect in the invention, provide a kind of manufacture method of N-type solar cell, be included in deposit antireflective coating the silicon chip substrate back side on form selectivity back surface field, wherein, selectivity back surface field is adopt the manufacture method of the selectivity back surface field of any one N-type silicon solar cell above-mentioned to be made.As shown in Figure 1, the method making N-type solar cell generally comprises: make emitter and back surface field after carrying out surface preparation to silicon chip; In back surface field, deposition forms antireflective coating; Antireflective coating makes selectivity back surface field; And print positive and negative electrode and sinter.
When making N-type silicon chip, first surface wool manufacturing being carried out to silicon chip, in order to strengthen passivation effect, chemical etch polishing and cleaning being carried out to the silicon chip after making herbs into wool.The surface area of silicon chip back side can be reduced by polishing, strengthen back reflection rate, improve the effect of passivation preferably.On silicon chip, p-n junction and back surface field is made after polishing, deposited in back surface field by PECVD and form antireflective coating, the major function of antireflective coating is the reverberation reducing or eliminating the optical surfaces such as lens, prism, level crossing, thus increase the light transmission capacity of these elements, reduce or eliminate the stray light of system, the present invention preferably adopts silicon nitride antireflective.After antireflective coating makes selectivity back surface field, the mode of silk screen printing is adopted to make positive electrode and back electrode.
According to another aspect of the invention, additionally provide a kind of N-type silicon solar cell, this N-type silicon solar cell is adopt above-mentioned method to be made.
Advantage of the present invention is further illustrated below in conjunction with specific embodiment:
Embodiment 1
1) by sending into after N-type silicon chip surface cleaning, to be contained with mass percent concentration be in the texturing slot of the potassium hydroxide solution of 1% and the mixed liquor (volume ratio is 1:10) of isopropyl alcohol, 60 DEG C of surface wool manufacturings 20 minutes.To the polished backside in the nitrate acid and hydrofluoric acid mixed liquor of 8 DEG C of the silicon chip after making herbs into wool, potassium hydroxide solution and hydrofluoric acid solution is adopted to clean successively afterwards.Silicon chip surface after cleaning makes emitter and back surface field.
2) adopt silane and ammonia as raw material, adopt PECVD method to deposit on the surface having made emitter and back surface field at 350 DEG C, obtain the silicon nitride layer that thickness is 100nm.
3) the corrosivity slurry Smart3000 adopting silk screen print method German Merck company to be produced is printed on the precalculated position on the silicon nitride anti-reflecting film being positioned at the silicon chip substrate back side, then the silicon chip with corrosivity slurry is put into sintering furnace and be heated to 200 DEG C, keep 5 minutes, then room temperature is cooled to, adopt mass concentration be 2% ammonia spirit silicon chip surface is cleaned, dry 60s at 50 DEG C, obtain a series of linear phosphorus spreading grooves district.The length of straight line is 153mm, and width is 50 μm, is spaced apart 1000 μm between straight line.
4) silicon chip with phosphorus spreading grooves district obtained in step 3) is put into diffusion furnace, pass into POCl3 as phosphorus source (flow of POCl3 is 200sccm), deposit and spread 20 minutes at 810 DEG C, obtains heavily doped selectivity back surface field.
5) after adopt silver content be 75wt% silver slurry at front side of silicon wafer and back up electrode, sinter at afterwards silicon chip being placed at 820 DEG C, obtain the N-type silicon chip with selectivity back surface field.
Embodiment 2
1) by sending into after N-type silicon chip surface cleaning, to be contained with mass percent concentration be in the texturing slot of the potassium hydroxide solution of 1% and the mixed liquor (volume ratio is 1:10) of isopropyl alcohol, 60 DEG C of surface wool manufacturings 20 minutes.To the polished backside in the nitrate acid and hydrofluoric acid mixed liquor of 8 DEG C of the silicon chip after making herbs into wool, potassium hydroxide solution and hydrofluoric acid solution is adopted to clean successively afterwards.Silicon chip surface after cleaning makes emitter and back surface field.
2) adopt silane and ammonia as raw material, adopt PECVD method to deposit on the surface having made emitter and back surface field at 350 DEG C, obtain the silicon nitride layer that thickness is 100nm.
3) the corrosivity slurry Smart3000 adopting silk screen print method German Merck company to be produced is printed on the precalculated position of silicon nitride anti-reflecting film, then the silicon chip with corrosivity slurry is put into sintering furnace and be heated to 350 DEG C, keep 1 minute, then room temperature is cooled to, adopt mass concentration be 2% ammonia spirit silicon chip surface is cleaned, dry 10s at 90 DEG C, obtain a series of linear phosphorus spreading grooves district.The length of straight line is 153mm, and width is 50 μm, is spaced apart 1000 μm between straight line.
4) silicon chip with phosphorus spreading grooves district obtained in step 3) is put into diffusion furnace, pass into POCl
3as phosphorus source (POCl
3flow be 200sccm), deposit and spread 5 minutes at 870 DEG C, obtains heavily doped selectivity back surface field.
5) adopt silver slurry (silver content in silver slurry is 75wt%) to print electrode at front and back after, sinter at afterwards silicon chip being placed in 820 DEG C, obtain the N-type silicon chip with selectivity back surface field.
Embodiment 3
1) by sending into after N-type silicon chip surface cleaning, to be contained with mass percent concentration be in the texturing slot of the potassium hydroxide solution of 1% and the mixed liquor (volume ratio is 1:10) of isopropyl alcohol, 60 DEG C of surface wool manufacturings 20 minutes.To the polished backside in the nitrate acid and hydrofluoric acid mixed liquor of 8 DEG C of the silicon chip after making herbs into wool, potassium hydroxide solution and hydrofluoric acid solution is adopted to clean successively afterwards.Silicon chip surface after cleaning makes emitter and back surface field.
2) adopt silane and ammonia as raw material, adopt PECVD method to deposit on the surface having made emitter and back surface field at 350 DEG C, obtain the silicon nitride layer that thickness is 100nm.
3) the corrosivity slurry Smart3000 adopting silk screen print method German Merck company to be produced is printed on the precalculated position on silicon nitride anti-reflecting film, then the silicon chip with corrosivity slurry is put into sintering furnace and be heated to 280 DEG C, keep 1 minute, then room temperature is cooled to, adopt mass concentration be 10% ammonia spirit silicon chip surface is cleaned, dry 35s at 70 DEG C, obtain a series of linear pattern phosphorus spreading grooves district.The length of straight line is 153mm, and width is 50 μm, is spaced apart 1000 μm between straight line.
4) silicon chip with phosphorus spreading grooves district obtained in step 3) is put into diffusion furnace, pass into POCl3 as phosphorus source (flow of POCl3 is 500sccm), deposit and spread 15 minutes at 850 DEG C, obtains heavily doped selectivity back surface field.
5) adopt silver slurry (silver content in silver slurry is 75wt%) to print electrode at front and back after, sinter at afterwards silicon chip being placed at 820 DEG C, obtain the N-type silicon chip with selectivity back surface field.
Embodiment 4
All identical with method with the operating procedure in embodiment 3, difference does not adopt ammonia spirit to clean after being to print corrosive slurry in embodiment 4, but employing mass concentration is the sodium hydroxide solution cleaning of 15%.
Embodiment 5
1) by sending into after N-type silicon chip surface cleaning, to be contained with mass percent concentration be in the texturing slot of the potassium hydroxide solution of 1% and the mixed liquor (volume ratio is 1:10) of isopropyl alcohol, 60 DEG C of surface wool manufacturings 20 minutes.To the polished backside in the nitrate acid and hydrofluoric acid mixed liquor of 8 DEG C of the silicon chip after making herbs into wool, potassium hydroxide solution and hydrofluoric acid solution is adopted to clean successively afterwards.Silicon chip surface after cleaning makes emitter and back surface field.
2) adopt silane and ammonia as raw material, adopt PECVD method to deposit on the surface having made emitter and back surface field at 350 DEG C, obtain the silicon nitride layer that thickness is 100nm.
3) the corrosivity slurry Smart3000 adopting silk screen print method German Merck company to be produced is printed on silicon nitride anti-reflecting film, then the silicon chip with corrosivity slurry is put into sintering furnace and be heated to 150 DEG C, keep 8 minutes, then room temperature is cooled to, adopt mass concentration be 1% ammonia spirit silicon chip surface is cleaned, dry 5s at 35 DEG C, obtain a series of linear pattern phosphorus spreading grooves district.The length of straight line is 153mm, and width is 50 μm, is spaced apart 1000 μm between straight line.
4) silicon chip with phosphorus spreading grooves district obtained in step 3) is put into diffusion furnace, pass into POCl
3as phosphorus source (flow of POCl3 is 150sccm), deposit and spread 25 minutes at 780 DEG C, obtains heavily doped selectivity back surface field.
5) adopt silver slurry (silver content in silver slurry is 75wt%) to print electrode at front and back after, sinter at afterwards silicon chip being placed at 820 DEG C, obtain the N-type silicon chip with selectivity back surface field.
Embodiment 6
All identical with method with the operating procedure in embodiment 3, difference is the mode not adopting silk screen printing corrosivity slurry in embodiment 6, but adopt laser method on the silicon chip back side with antireflective coating, to offer a series of circular hole as phosphorus spreading grooves district, the diameter of circular hole is 30 μm, is spaced apart 500 μm between circular hole.The power of described laser is 10W, and pulse duration is 500ns, and wavelength is 1600nm, and frequency is 100Hz, and the diameter of hot spot is 100 μm.
Carry out the operations such as encapsulation to the N-type silicon chip of preparation in embodiment 1 to 6 and comparative example 1, obtain solar battery sheet, adopt Halm tester to measure the Uoc of solar battery sheet, Isc, FF, Eff, specific performance data are in table 1.
Table 1
As can be seen from Table 1, adopt technical scheme of the present invention, by slotting on the precalculated position of N-type silicon chip substrate depositing antireflective coating, and cross-notching district carries out the heavy doping of phosphorus source, the region that gate electrode line covers and near the highly doped dark diffusion region of formation, easily form ohmic contact when doing electrode, and the volume resistance in this region is less, thus reduce the series resistance of solar cell, improve the fill factor, curve factor F.F. of battery; Do not have chlamydate region to form low-doped shallow diffusion region at gate electrode line, can good surface passivation be carried out, reduce the surface recombination probability of minority carrier, thus reduce the reverse saturation current of battery, improve open circuit voltage Voc and the short circuit current Isc of battery.
Do not adopt ammonia spirit to clean after the complete corrosivity slurry of silk screen printing in embodiment 4, but employing mass concentration is the sodium hydroxide solution cleaning of 15%.This can introduce other metal ion, and then forms complex centre, thus affects minority carrier life time, reduces the conversion efficiency of battery.
Although also use technical scheme of the present invention in embodiment 5, but in the operation of embodiment 5 when adding hot corrosion to corrosivity slurry and offering phosphorus spreading grooves and phosphorus diffusion, due to the select permeability of the parameter values such as temperature, phosphorus diffusion temperature and phosphorus source flux that silicon chip heats, make the effect of the selectivity back surface field of the N-type silicon chip prepared poor relative to embodiment 3, have impact on the conversion efficiency of battery.
The mode of silk screen printing corrosivity slurry is not adopted in embodiment 6, but adopt laser method on the silicon chip back side with antireflective coating, to offer a series of circular hole as phosphorus spreading grooves district, relative to the mode adopting silk screen printing corrosivity slurry to offer phosphorus diffusion region in embodiment 3, without the need to cleaning step, but there is fire damage, the minority carrier life time of etched area can be affected, increase recombination losses.
Visible, compared with the barrier layer of preparing in prior art when oxide layer spreads as phosphorus, the present invention does not need additionally to make phosphorus diffusion impervious layer, only utilize the antireflective coating that when making N-type silicon solar cell, deposition is formed, just phosphorus source can be stoped not need heavily doped regional diffusion to other when the high temperature phosphorous diffusion making selectivity back surface field, and then prepared the selectivity back surface field with high-doped zone and doped regions structure, improve minority carrier life time and open circuit voltage; The horizontal n+/n height knot formed in doped regions and high-doped zone intersection, can improve the collection rate of photo-generated carrier, thus shorten the short circuit current Isc of battery, also improve the conversion efficiency of fill factor, curve factor and battery simultaneously.Simultaneously because this manufacture method only needs a pyroprocess just can form the different selectivity back surface field of doping content at the back side of N-type substrate silicon chip, the step of oxide layer is at high temperature made when avoiding phosphorus diffusion in prior art, decrease damage, reduce energy consumption and production cost, improve production efficiency, be suitable for large-scale production.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. a manufacture method for the selectivity back surface field of N-type silicon solar cell, is characterized in that, comprise the following steps:
S1, there is antireflective coating at silicon chip substrate backside deposition, slot in the precalculated position of antireflective coating, to form phosphorus spreading grooves district; And
S2, on the described silicon chip substrate back side with described phosphorus spreading grooves district, carry out phosphorus diffusion, to make to form heavy doping in described phosphorus spreading grooves district, thus form described selectivity back surface field.
2. manufacture method according to claim 1, is characterized in that, adopts corrosivity slurry to slot on the described precalculated position at the described silicon chip substrate back side depositing antireflective coating.
3. manufacture method according to claim 2, is characterized in that, the step adopting corrosivity slurry to carry out slotting comprises:
S11, by silk screen print method, described corrosivity slurry is printed on the described precalculated position of described antireflective coating;
S12, the described silicon chip substrate being printed with described corrosivity slurry is heated to predetermined temperature and is incubated; And
S13, described silicon chip substrate is cleaned, dried, form described phosphorus spreading grooves district.
4. manufacture method according to claim 3, is characterized in that, adopts weakly alkaline solution to clean described silicon chip substrate in described step S13.
5. manufacture method according to claim 4, is characterized in that, described weakly alkaline solution comprise in ammonia spirit, potassium hydroxide solution, ammonium bicarbonate soln and sal volatile one or more.
6. manufacture method according to claim 5, is characterized in that, described weakly alkaline solution is ammonia spirit, and the mass concentration of described ammonia spirit is 2% ~ 10%.
7. manufacture method according to claim 1, is characterized in that, described precalculated position is position corresponding with metal electrode on the described silicon chip substrate back side.
8. manufacture method according to claim 1, is characterized in that, in described step S2, adopts POCl
3carry out phosphorus diffusion as phosphorus source, the temperature of described phosphorus diffusion is 810 DEG C ~ 870 DEG C, and the time of diffusion is 5 ~ 20 minutes, described POCl
3flow be 200 ~ 800sccm.
9. manufacture method according to claim 1, it is characterized in that, laser is adopted to slot on the described precalculated position of described antireflective coating, the power of described laser is 0.5 ~ 10W, pulse duration is 100ps ~ 500ns, wavelength is 300 ~ 1600nm, and frequency is 100Hz ~ 200KHz, and the diameter of hot spot is 5 ~ 100 μm.
10. the manufacture method of a N-type solar cell, it is characterized in that, be included in deposit antireflective coating the silicon chip substrate back side on form selectivity back surface field, wherein, the manufacture method of the selectivity back surface field of the N-type silicon solar cell of described selectivity back surface field according to any one of employing claim 1 to 9 is made.
11. 1 kinds of N-type silicon solar cells, is characterized in that, described N-type silicon solar cell is adopt the manufacture method in claim 10 to be made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410046279.7A CN103762279B (en) | 2014-02-10 | 2014-02-10 | The manufacture method, N-type silicon solar cell and preparation method thereof of the selectivity back surface field of N-type silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410046279.7A CN103762279B (en) | 2014-02-10 | 2014-02-10 | The manufacture method, N-type silicon solar cell and preparation method thereof of the selectivity back surface field of N-type silicon solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103762279A CN103762279A (en) | 2014-04-30 |
| CN103762279B true CN103762279B (en) | 2016-04-20 |
Family
ID=50529486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410046279.7A Active CN103762279B (en) | 2014-02-10 | 2014-02-10 | The manufacture method, N-type silicon solar cell and preparation method thereof of the selectivity back surface field of N-type silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103762279B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393110A (en) * | 2014-10-28 | 2015-03-04 | 常州天合光能有限公司 | Technology for simultaneous realization of selective doping on double surfaces of N-type solar cell |
| JP7064823B2 (en) * | 2016-08-31 | 2022-05-11 | 株式会社マテリアル・コンセプト | Solar cells and their manufacturing methods |
| CN106711286B (en) * | 2016-12-28 | 2017-12-15 | 杭州福斯特应用材料股份有限公司 | One kind utilizes photosensitive polyimide patterning crystal silicon battery selectivity back surface field preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853899A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing solar cell by using local area back field |
| CN103077975A (en) * | 2013-01-05 | 2013-05-01 | 中山大学 | Low-cost n-type dual-side solar battery and preparation method thereof |
| CN103227244A (en) * | 2013-05-07 | 2013-07-31 | 英利集团有限公司 | N-type solar cell and preparation method of selective back surface fields of N-type solar cell |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013026344A (en) * | 2011-07-19 | 2013-02-04 | Hitachi Chem Co Ltd | Manufacturing method of n-type diffusion layer, manufacturing method of solar cell element, and solar cell element |
-
2014
- 2014-02-10 CN CN201410046279.7A patent/CN103762279B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853899A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing solar cell by using local area back field |
| CN103077975A (en) * | 2013-01-05 | 2013-05-01 | 中山大学 | Low-cost n-type dual-side solar battery and preparation method thereof |
| CN103227244A (en) * | 2013-05-07 | 2013-07-31 | 英利集团有限公司 | N-type solar cell and preparation method of selective back surface fields of N-type solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103762279A (en) | 2014-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109888061A (en) | Alkali-polished efficient PERC battery and preparation process thereof | |
| CN109166794B (en) | A kind of multiple step format phosphorous doping methods of crystal silicon battery | |
| CN109994553A (en) | Three layers of dielectric passivation film PERC solar cell of one kind and manufacture craft | |
| CN101937940B (en) | Technology for manufacturing selective emitter junction solar cell by printed phosphorous source one-step diffusion method | |
| CN104733555A (en) | Efficient N-type double-sided solar cell and preparation method thereof | |
| EP2782146A1 (en) | Solar cell with reduced potential induced degradation and manufacturing method thereof | |
| CN101587919A (en) | Method for manufacturing selective emitter junction of multricrytalline silicon solar cell | |
| CN101667602A (en) | Polysilicon solar cell and preparation method thereof | |
| CN106653942A (en) | N-type monocrystalline silicon double-sided cell manufacturing method | |
| JP2017531926A (en) | N-type double-sided battery wet etching method | |
| CN110429157A (en) | The preparation method and solar battery of solar battery | |
| CN101950781A (en) | Silicon chip carrier and making process for selective emitter solar cell | |
| CN109616528A (en) | A kind of preparation method of selective emitter of solar battery | |
| CN103456837A (en) | Method for manufacturing solar cell with local back surface field passivation | |
| CN102916087B (en) | Solar cell and manufacturing method thereof | |
| CN102931287A (en) | N-type battery slice and preparation method thereof | |
| CN104157740B (en) | N-type two-side solar cell manufacturing method | |
| CN103477450A (en) | Method of forming P-N junction in solar cell substrate | |
| CN102569502A (en) | Wet method etching process | |
| CN103762279B (en) | The manufacture method, N-type silicon solar cell and preparation method thereof of the selectivity back surface field of N-type silicon solar cell | |
| CN102709389B (en) | Method for preparing double-faced back contact solar cell | |
| KR20090028883A (en) | Solar cell and method for manufacturing the same | |
| CN103606597B (en) | Local doping back of the body passivation crystal silicon solar energy battery and preparation method thereof | |
| CN102306664B (en) | Solar battery with black silicon structure on emitter and preparation method of solar battery | |
| CN102800739B (en) | Manufacturing method of selective emitter monocrystalline silicon solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |