CN101388421A - Using method of solar cell phosphorus pulp - Google Patents
Using method of solar cell phosphorus pulp Download PDFInfo
- Publication number
- CN101388421A CN101388421A CNA2008101442865A CN200810144286A CN101388421A CN 101388421 A CN101388421 A CN 101388421A CN A2008101442865 A CNA2008101442865 A CN A2008101442865A CN 200810144286 A CN200810144286 A CN 200810144286A CN 101388421 A CN101388421 A CN 101388421A
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- China
- Prior art keywords
- solar cell
- printing
- phosphorus
- slurry
- crystal silicon
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of solar cell production, in particular to a use method of solar cell phosphorous paste, which comprises passing a crystal silicon wafer through the cleaning and wool-making in turn, selectively printing the phosphorous paste on the surface of the crystal silicon wafer according to certain intervals, drying paste, diffusing, removing phosphosilicate glass, engraving edges, plating silicon nitride, reducing a reflection film, printing back electrodes, printing an aluminum back field, and printing front electrodes, thereby making into a solar cell through sintering process, wherein the phosphorus percentage in the phosphorous paste is 1%-3%. The solar cell with selective diffusing structure can be conveniently obtained through the method, and the method is simple, is easy to realize, has less pollution, and is suitable for production in industrialization.
Description
Technical field
The present invention relates to technical field of solar cell production, particularly a kind of using method of solar cell phosphorus pulp.
Background technology
Crystal-silicon solar cell has occupied the share more than 90% in photovoltaic market, how further to raise the efficiency, and reducing cost is the elementary object of domestic and international crystal-silicon solar cell research field.
Realize that on silicon chip selective emitting electrode structure is that the p-n junction crystal-silicon solar cell is realized one of high-efficiency method.So-called selective emitting electrode structure has two features: 1) under gate electrode line and near the highly doped dark diffusion region of formation; 2) form low-doped shallow diffusion region in other zones.The key that realizes selective emitting electrode structure is how to form top said two zones.The method that realizes selective emission area has a variety of, and modal have photoetching, a lbg.But these methods are too complicated for the solar cell manufacturing, can only be applied in laboratory or the small-scale production, are difficult to promote in the industrialization of conventional batteries is produced.In recent years, the method for selective emission area has also appearred realizing with silk screen printing phosphorus slurry, but because the problems such as pollution that silk screen printing brings, this method is not used widely yet.
Summary of the invention
The objective of the invention is to provide a kind of using method of solar cell phosphorus pulp, this method can improve the efficient of diffusion, is used to form more desirable selective emitter, improves the photoelectric efficiency of solar cell.
The technical solution used in the present invention is: a kind of using method of solar cell phosphorus pulp, crystal silicon chip select be printed on crystal silicon chip surface with the phosphorus slurry according to certain intervals successively by cleaning and texturing, the oven dry slurry, diffusion, the dephosphorization silex glass is carved the limit, plating silicon nitride, antireflection film, the printed back electrode, printing aluminium back of the body field, printing front electrode, sintering process is made solar cell, and phosphorous percentage is 1%～30% in the phosphorus slurry.
The phosphorus slurry selects the position of printing identical with the printing position of front electrode according to certain intervals.
The invention has the beneficial effects as follows: the method for this printing phosphorus slurry can form good diffusion in diffusion furnace, utilizes it to form more desirable selectivity diffusion, improves the photoelectric efficiency of solar cell.
Embodiment
A kind of using method of solar cell phosphorus pulp, crystal silicon chip select be printed on crystal silicon chip surface with the phosphorus slurry according to certain intervals successively by cleaning and texturing, the oven dry slurry, diffusion, the dephosphorization silex glass is carved the limit, plating silicon nitride, antireflection film, the printed back electrode, printing aluminium back of the body field, printing front electrode, sintering process is made solar cell, and phosphorous percentage is 1%～30% in the phosphorus slurry.Adopt this phosphorus slurry in diffusion furnace, can form the selectivity diffusion that is suitable for making solar cell.The phosphorus slurry selects the position of printing identical with the printing position of front electrode according to certain intervals.
Claims (2)
1, a kind of using method of solar cell phosphorus pulp, crystal silicon chip selects be printed on crystal silicon chip surface with the phosphorus slurry according to certain intervals successively by cleaning and texturing, the oven dry slurry, diffusion, the dephosphorization silex glass is carved limit, plating silicon nitride, antireflection film, the printed back electrode, printing aluminium back of the body field, the printing front electrode, sintering process is made solar cell, it is characterized in that: phosphorous percentage is 1%～30% in the described phosphorus slurry.
2, the using method of solar cell phosphorus pulp according to claim 1 is characterized in that: described phosphorus slurry selects the position of printing identical with the printing position of front electrode according to certain intervals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101442865A CN101388421A (en) | 2008-07-31 | 2008-07-31 | Using method of solar cell phosphorus pulp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101442865A CN101388421A (en) | 2008-07-31 | 2008-07-31 | Using method of solar cell phosphorus pulp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101388421A true CN101388421A (en) | 2009-03-18 |
Family
ID=40477700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008101442865A Pending CN101388421A (en) | 2008-07-31 | 2008-07-31 | Using method of solar cell phosphorus pulp |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101388421A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097525A (en) * | 2010-09-28 | 2011-06-15 | 常州天合光能有限公司 | Method for preparing N-type solar cell by one-step diffusion |
| CN102148283A (en) * | 2010-09-28 | 2011-08-10 | 常州天合光能有限公司 | Method for preparing N-type solar battery by one-step diffusion |
| CN102255000A (en) * | 2011-08-08 | 2011-11-23 | 山东力诺太阳能电力股份有限公司 | Preparing method of solar cell slice with pattern |
| CN104538498A (en) * | 2014-12-30 | 2015-04-22 | 浙江贝盛光伏股份有限公司 | Crystalline silicon cell and manufacturing method thereof |
-
2008
- 2008-07-31 CN CNA2008101442865A patent/CN101388421A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097525A (en) * | 2010-09-28 | 2011-06-15 | 常州天合光能有限公司 | Method for preparing N-type solar cell by one-step diffusion |
| CN102148283A (en) * | 2010-09-28 | 2011-08-10 | 常州天合光能有限公司 | Method for preparing N-type solar battery by one-step diffusion |
| CN102255000A (en) * | 2011-08-08 | 2011-11-23 | 山东力诺太阳能电力股份有限公司 | Preparing method of solar cell slice with pattern |
| CN104538498A (en) * | 2014-12-30 | 2015-04-22 | 浙江贝盛光伏股份有限公司 | Crystalline silicon cell and manufacturing method thereof |
| CN104538498B (en) * | 2014-12-30 | 2017-02-01 | 浙江贝盛光伏股份有限公司 | Crystalline silicon cell and manufacturing method thereof |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090318 |