CN102263164A - Manufacturing technology for contact alloying of meal-semiconductor of silicon solar battery - Google Patents
Manufacturing technology for contact alloying of meal-semiconductor of silicon solar battery Download PDFInfo
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- CN102263164A CN102263164A CN2011101882640A CN201110188264A CN102263164A CN 102263164 A CN102263164 A CN 102263164A CN 2011101882640 A CN2011101882640 A CN 2011101882640A CN 201110188264 A CN201110188264 A CN 201110188264A CN 102263164 A CN102263164 A CN 102263164A
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Abstract
The invention relates to a manufacturing technology for contact alloying of a meal-semiconductor of a silicon solar battery, which comprises the following steps of: a. washing a silicon wafer and etching; b. diffusing; c. removing edge junctions and phosphorosilicate glass; d. plating an antireflective coating on the positive surface of the silicon wafer; e. manufacturing a metal electrode on the positive surface of the silicon wafer; f. irradiating the metal electrode from the reverse surface of the silicon wafer by using laser lights; g. manufacturing a back electrode on the reverse surface of the silicon wafer; and h. heating. The invention provides the manufacturing technology for contact alloying of the meal-semiconductor of the silicon solar battery, wherein the meal-semiconductor can effectively decrease an ohmic contact resistance between a silicon wafer and the metal electrode, does not need to be sintered at high temperature, can reduce the series resistor of the battery and improves the photoelectric conversion efficiency of the solar battery.
Description
Technical field
The present invention relates to a kind of silicon solar cell metal semiconductor contact alloy preparation technology, belong to the electrode metal technical field of silicon solar cell.
Background technology
Photovoltaic industry becomes fastest-rising in the world new high-tech industry since entering 21 century.In all kinds of solar cells, crystal silicon solar energy battery occupies extremely important status, has occupied the share of photovoltaic market more than 80% at present.In the field of study, the laboratory efficient of small size monocrystalline silicon and polycrystal silicon cell has reached 25% and 20.4% respectively, but the preparation technology of these high-efficiency batteries is too complicated, can't satisfy the requirement of industrialization.In industrial field, conventional polycrystal silicon cell efficient is 15-17%, and monocrystalline silicon battery efficient is 17-19%.
The preparation method of traditional solar cell and technological process thereof be cleaning and texturing, diffusion, trimming knot, remove PSG, be coated with silicon nitride film, silk screen printing, sintering and test.Traditional high-sintering process has determined solar battery efficiency not improve a lot, maximum temperature is greater than 800 ℃ in the sintering process, time is greater than 1s, pyroprocess is longer, introduce the contamination of impurity, and do not satisfy square resistance greater than 60 Ω/, junction depth demand less than the required low ohm contact resistance of the shallow junction high-efficiency battery of 0.3 μ m.In addition, because the square resistance size of each battery sheet of diffusion back is all variant, and present sintering process is that the battery sheet that square resistance is more or less the same is adopted same sintering temperature, just there is the higher problem of sintering temperature for square resistance the higher or very uneven battery sheet of square resistance, sintering temperature is higher, PN junction will burn electric leakage, if reduction sintering temperature, will exist silicon nitride film not burn, situations such as sintering deficiency, cause series resistance too high, battery efficiency is not high.
Summary of the invention
The objective of the invention is to overcome the defective that prior art exists, a kind of silicon solar cell metal semiconductor contact alloy preparation technology that can effectively reduce the ohmic contact resistance between silicon chip and the metal electrode is provided, it need not high temperature sintering, and can reduce the series resistance of battery, improve the photoelectric conversion efficiency of solar cell.
The technical solution adopted for the present invention to solve the technical problems is: a kind of silicon solar cell metal semiconductor contact alloy preparation technology, and step is as follows: a, with silicon chip cleaning and texturing; B, diffusion; C, trimming knot and dephosphorization silex glass; D, at the positive plating of silicon chip antireflective film; E, at the positive metal electrode of making of silicon chip; F, with laser from silicon chip reverse side irradiation metal electrode; G, make backplate at the silicon chip reverse side; H, make back surface field at the silicon chip reverse side; I, heating.
Laser among the step f can penetrate silicon chip, and its wavelength is more than or equal to 1um, and power is 1～10w, and light pulse power is 0.5～5J/cm
2, frequency is 1～100kHZ or continuity, spot diameter is 50～200 μ m.
Heating-up temperature is 550～650 ℃ in the step I.
Adopt screen printing mode that metal paste is printed on the silicon chip front among the step e, oven dry forms electrode then, and bake out temperature is 150～450 ℃.
Adopt electric plating method to form electrode among the step e at the silicon chip surface plated metal.
Adopt the mode of inkjet printing to form electrode among the step e at the silicon chip surface type metal.
Adopt the mode of plated film to make electrode among the step e, the mode of plated film is vacuum evaporation or sputter or ion film plating.
Beneficial effect of the present invention: the invention solves the defective that exists in the background technology, adopt new type of metal semiconductor contact alloying preparation technology that laser radiation has been replaced the high temperature in the traditional handicraft (＞800 ℃) sintering, making metal molten and silicon form the good metal semiconductor contacts, and realized the ohmic contact of solar cell well, satisfied square resistance greater than 60 Ω/, junction depth is less than the demand of the required low ohm contact resistance of the shallow junction high-efficiency battery of 0.3 μ m, and reduced the series resistance of solar cell, improved conversion efficiency of solar cell.In preparation process, battery sheet integral body is in room temperature, has reduced staining of impurity; Laser irradiation time is less than 1s, and the processing time shortening has prevented that effectively PN junction from burning electric leakage.And the inventive method is simple, be easy to realize, pollution-free, be applicable to industrialized production, can in the crystal silicon solar energy battery of routine is produced, use.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Fig. 1 is preparation technology's flow chart of traditional solar cell;
Fig. 2 is a solar cell metal semiconductor contact alloy preparation technology flow chart of the present invention;
Fig. 3 is the schematic diagram of laser from silicon chip reverse side irradiation metal electrode.
Wherein, 1, silicon chip; 2, antireflective film; 3, metal electrode; 4, laser.
Embodiment
As Fig. 2, a kind of silicon solar cell metal semiconductor contact alloy preparation technology shown in Figure 3, step is as follows: a, with silicon chip 1 cleaning and texturing; B, diffusion; C, trimming knot and phosphorosilicate glass; D, at the positive plating of silicon chip 1 antireflective film 2; E, at the positive metal electrode 3 of making of silicon chip 1; F, usefulness laser 4 are from silicon chip 1 reverse side irradiation metal electrode 3; G, make backplate at silicon chip 1 reverse side; H, make back surface field at silicon chip 1 reverse side; I, heating; J, photovoltaic efficiency test.
Heating-up temperature is 550～650 ℃ in the step I, and heating makes back surface field contact with silicon with backplate.
Adopt method for printing screen that metal paste is printed on silicon chip 1 front among the step e, oven dry then, bake out temperature is 150～450 ℃; Also can adopt electric plating method to form electrode at silicon chip 1 electroplating surface metal; Also can adopt the mode of inkjet printing to form electrode at silicon chip 1 surface printing metal; Also can adopt the mode of plated film to make electrode, the mode of this plated film is vacuum evaporation or sputter or ion plating.
In laser 4 scanning processes, electrode contact with semiconductor the position rapidly fusing and and semiconductor formation good Ohmic contact, from 10 of present standard technology
-2Ω/cm
2Magnitude can be reduced to theoretical value be close 10
-5Ω/cm
2Magnitude or better level, the minimum lifting 0.2% of photoelectric conversion efficiency.
Should be appreciated that specific embodiment described above only is used to explain the present invention, and be not used in qualification the present invention.Conspicuous variation of being extended out by spirit of the present invention or change still are among protection scope of the present invention.
Claims (9)
1. silicon solar cell metal semiconductor contact alloy preparation technology is characterized in that preparation process is as follows: a, with silicon chip (1) cleaning and texturing; B, diffusion; C, trimming knot and dephosphorization silex glass; D, at the positive plating of silicon chip (1) antireflective film (2); E, at the positive metal electrode (3) of making of silicon chip (1); F, usefulness laser (4) are from silicon chip (1) reverse side irradiation metal electrode (3); G, make backplate at silicon chip (1) reverse side; H, make back surface field at silicon chip (1) reverse side; I, heating.
2. silicon solar cell metal semiconductor contact alloy preparation technology according to claim 1, it is characterized in that: the laser among the step f (4) can penetrate silicon chip (1), its wavelength is more than or equal to 1um, and power is 1～10w, and light pulse power is 0.5～5J/cm
2, frequency is 1～100kHZ or continuity, spot diameter is 50～200 μ m.
3. silicon solar cell metal semiconductor contact alloy preparation technology according to claim 1, it is characterized in that: heating-up temperature is 550～650 ℃ in the step I.
4. according to any described silicon solar cell metal semiconductor contact alloy preparation technology among the claim 1-3, it is characterized in that: adopt screen printing mode that metal paste is printed on silicon chip (1) front among the step e, oven dry forms electrode then.
5. silicon solar cell metal semiconductor contact alloy preparation technology according to claim 4, it is characterized in that: described bake out temperature is 150～450 ℃.
6. according to any described silicon solar cell metal semiconductor contact alloy preparation technology among the claim 1-3, it is characterized in that: adopt electric plating method to form electrode among the step e at silicon chip (1) electroplating surface metal.
7. according to any described silicon solar cell metal semiconductor contact alloy preparation technology among the claim 1-3, it is characterized in that: adopt the mode of inkjet printing to form electrode among the step e at silicon chip (1) surface printing metal.
8. according to any described silicon solar cell metal semiconductor contact alloy preparation technology among the claim 1-3, it is characterized in that: adopt the mode of plated film to make electrode among the step e.
According to Claim 8 in any described silicon solar cell metal semiconductor contact alloy preparation technology, it is characterized in that: the mode of described plated film is vacuum evaporation or sputter or ion film plating.
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| CN2011101882640A CN102263164A (en) | 2011-07-06 | 2011-07-06 | Manufacturing technology for contact alloying of meal-semiconductor of silicon solar battery |
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| CN2011101882640A CN102263164A (en) | 2011-07-06 | 2011-07-06 | Manufacturing technology for contact alloying of meal-semiconductor of silicon solar battery |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103855252A (en) * | 2014-02-14 | 2014-06-11 | 中国科学院电工研究所 | Manufacturing method for heavy doping emitter region and grid line electrode |
| CN106816483A (en) * | 2015-12-01 | 2017-06-09 | 天津斯沃姆科技发展有限公司 | A kind of contactless preparation system and method for crystal-silicon solar cell grid line |
| CN107863417A (en) * | 2017-10-31 | 2018-03-30 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of n-type solar cell |
| CN107946381A (en) * | 2017-10-31 | 2018-04-20 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of electrode of solar battery |
| CN108039375A (en) * | 2017-10-31 | 2018-05-15 | 泰州隆基乐叶光伏科技有限公司 | Finger-like intersects the preparation method of back contacts solar cell |
| CN108039374A (en) * | 2017-10-31 | 2018-05-15 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of N-shaped double-side solar cell |
| CN108878591A (en) * | 2018-07-02 | 2018-11-23 | 通威太阳能（安徽）有限公司 | A kind of laser sintering processes of crystal silicon solar batteries metal electrode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101053065A (en) * | 2004-07-26 | 2007-10-10 | 于尔根·H·维尔纳 | To processing laser doping with line focus laser beam to solid and to manufacture solar energy battery emitter electrode based on the said method |
| US20100243630A1 (en) * | 2008-03-27 | 2010-09-30 | Walter Psyk | Method for patterning the zinc oxide front electrode layer of a photovoltaic module |
| CN101872808A (en) * | 2010-06-04 | 2010-10-27 | 珈伟太阳能(武汉)有限公司 | Manufacturing method of selective emitter of crystalline silicon solar cell |
| TW201041173A (en) * | 2009-05-10 | 2010-11-16 | Lasfocus Corp | Methods and systems of manufacturing photovoltaic devices |
| CN102113137A (en) * | 2008-10-05 | 2011-06-29 | 常州雷射激光设备有限公司 | Methods and systems of manufacturing photovoltaic devices |
-
2011
- 2011-07-06 CN CN2011101882640A patent/CN102263164A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101053065A (en) * | 2004-07-26 | 2007-10-10 | 于尔根·H·维尔纳 | To processing laser doping with line focus laser beam to solid and to manufacture solar energy battery emitter electrode based on the said method |
| US20100243630A1 (en) * | 2008-03-27 | 2010-09-30 | Walter Psyk | Method for patterning the zinc oxide front electrode layer of a photovoltaic module |
| CN102113137A (en) * | 2008-10-05 | 2011-06-29 | 常州雷射激光设备有限公司 | Methods and systems of manufacturing photovoltaic devices |
| TW201041173A (en) * | 2009-05-10 | 2010-11-16 | Lasfocus Corp | Methods and systems of manufacturing photovoltaic devices |
| CN101872808A (en) * | 2010-06-04 | 2010-10-27 | 珈伟太阳能(武汉)有限公司 | Manufacturing method of selective emitter of crystalline silicon solar cell |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103855252A (en) * | 2014-02-14 | 2014-06-11 | 中国科学院电工研究所 | Manufacturing method for heavy doping emitter region and grid line electrode |
| CN103855252B (en) * | 2014-02-14 | 2016-08-17 | 中国科学院电工研究所 | A kind of Highly doped emitter and the preparation method of gate line electrode |
| CN106816483A (en) * | 2015-12-01 | 2017-06-09 | 天津斯沃姆科技发展有限公司 | A kind of contactless preparation system and method for crystal-silicon solar cell grid line |
| CN107863417A (en) * | 2017-10-31 | 2018-03-30 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of n-type solar cell |
| CN107946381A (en) * | 2017-10-31 | 2018-04-20 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of electrode of solar battery |
| CN108039375A (en) * | 2017-10-31 | 2018-05-15 | 泰州隆基乐叶光伏科技有限公司 | Finger-like intersects the preparation method of back contacts solar cell |
| CN108039374A (en) * | 2017-10-31 | 2018-05-15 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of N-shaped double-side solar cell |
| CN108878591A (en) * | 2018-07-02 | 2018-11-23 | 通威太阳能（安徽）有限公司 | A kind of laser sintering processes of crystal silicon solar batteries metal electrode |
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Application publication date: 20111130 |