CN101022140A - Method for realizing crystal silicon solar cell selective emitter region - Google Patents
Method for realizing crystal silicon solar cell selective emitter region Download PDFInfo
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- CN101022140A CN101022140A CNA2007100201903A CN200710020190A CN101022140A CN 101022140 A CN101022140 A CN 101022140A CN A2007100201903 A CNA2007100201903 A CN A2007100201903A CN 200710020190 A CN200710020190 A CN 200710020190A CN 101022140 A CN101022140 A CN 101022140A
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Abstract
This invention discloses a method for realizing selectivity emission regions for crystal Si solar cells, which first of all deposits a substance containing phosphor uniformly on a Si plate as the phosphor source, then forms a heavy dopent region on part of the surface of the Si plate by laser selectivity heating and finally heat-processes the plate to form a light diffusing region, which can realize selectivity emission region of solar cells conveniently to increase its performance.
Description
Technical field
The present invention relates to a kind of production of crystalline silicon solar batteries method, especially realize the production method of crystal silicon solar cell selective emitter region.
Background technology
Crystal silicon solar energy battery has occupied the share more than 90% in photovoltaic market, further raises the efficiency, and reducing cost is the elementary object of domestic and international crystal silicon solar energy battery research field.In recent years, in the field of study, the laboratory efficient of small size monocrystalline silicon and polycrystal silicon cell has reached 24.7% and 20.4% respectively.But the preparation technology of these high-efficiency batteries is too complicated, can't satisfy the requirement of industrialization.At industrial field, the efficient of conventional monocrystalline silicon battery is 16～17%, and the efficient of polycrystal silicon cell is 15～16%.
A subject matter of conventional batteries is to be difficult to realize selective emission area.So-called selective emission area is meant that the emitter region of battery is divided into two parts: heavy doping below the battery front surface electrode; Front surface does not have part (the being the light accepting part branch) light dope of electrode.The benefit of doing like this is: the regional diffusion concentration that contacts with metal electrode is very high, and contact resistance is very little; And be subjected to the emitter region sheet resistance of light can be bigger, avoided because the battery current that the emitter region auger recombination causes descends.Generally, the sheet resistance of heavy doping part is 5～20 Ω/, and the sheet resistance of light dope part is 80～300 Ω/.
The method that realizes selective emission area has a variety of, and modal have photoetching, a lbg.But these methods are too complicated for the solar cell manufacturing, can only be applied in laboratory or the small-scale production, are difficult to promote in the industrialization of conventional batteries is produced.In recent years, the method for selective emission area has also appearred realizing with silk screen printing phosphorus slurry, but because the problems such as pollution that silk screen printing brings, this method is not used widely yet.
Therefore, the existing conventional crystal silicon solar energy battery still adopts the method for single diffusion region.The sheet resistance of diffusion region is 30～60 Ω/, can not the too high requirement that doping can not be crossed low two aspects with sensitive surface to take into account the doping of electrode contact zone.But this compromise doped level has obviously limited the raising of solar battery efficiency.
Summary of the invention
The objective of the invention is to provide a kind of method that realizes crystal silicon solar cell selective emitter region, this method can improve the efficient of crystal silicon solar energy battery, is applicable to industrialization production and pollution-free.
The object of the present invention is achieved like this: the uniform deposition phosphorus containg substances forms heavily doped region by the laser selective heating in the silicon chip surface part then as the phosphorus source on silicon chip earlier, at last silicon chip is carried out bulk heat treatmet and forms light diffusion zone.
Also can be earlier on silicon chip the uniform deposition phosphorus containg substances simultaneously silicon chip is carried out bulk heat treatmet and forms light diffusion zone as the phosphorus source, at last by the laser selective heating at the local heavily doped region that forms of silicon chip surface.
Described silicon chip is the P type, and resistivity is 0.2～30 Ω cm, and before the deposition phosphorus containg substances, handle through conventional cleaning and conventional surface-texturing on the surface.
The method of deposition phosphorus containg substances comprises: the surface sprays or prints phosphorous slurry, at the phosphorous diffusion source layer of silicon chip surface pre-deposited.
Form heavily doped zone with laser selective heating silicon chip surface desire.Because the heat effect of laser, the phosphorus in the phosphorus containg substances of this zone inner surface pre-deposition spreads in silicon chip.Parameters such as the power density of control laser, focal length, bundle spot size, wavelength, translational speed can make silicon chip surface partly be reached 900～1400 ℃ temperature by laser radiation, and forming sheet resistance after laser radiation is the heavy diffusion zone of 5～30 Ω/.The part that does not have laser radiation, temperature still remain on 20～800 ℃, do not have the diffusion of phosphorus or diffusing capacity seldom.
The method of silicon chip being carried out bulk heat treatmet is conventional boiler tube heating or chain-conveyer furnace heating, 700～950 ℃ of heating-up temperatures, 2～100 minutes heating times.After the heating, it is 80～300 Ω/ lightly doped region that silicon chip surface forms sheet resistance.
The present invention can realize solar cell selective emitter region easily, improves Solar cell performance.Method is simple, is easy to realize, and is pollution-free.Be applicable to industrialization production, can in the crystal silicon solar energy battery production process of routine, use.
Further set forth the present invention below in conjunction with specific embodiment.
Embodiment
Embodiment 1:
Select the p type single crystal silicon sheet, crystal face (100), doping content 0.2 Ω cm.Silicon chip surface is through conventional surface-texturing and conventional clean process.
Silicon chip surface is sprayed the phosphorus source that main component is a phosphoric acid, dry 200～300 ℃ temperature then.
Form the part of heavy doping contact zone with laser radiation silicon chip surface desire.Parameters such as the power density of control laser, focal length, bundle spot size, wavelength, translational speed make silicon chip surface partly be reached 1300～1400 ℃ temperature by laser radiation, and forming sheet resistance after laser radiation is the heavy diffusion zone of 10 Ω/.
Place chain-type sintering furnace to carry out high-temperature process silicon chip.900 ℃ of heating-up temperatures, 2～5 minutes heating times.After the heat treatment, silicon chip surface forms evenly light diffusion zone, and sheet resistance is 80～100 Ω/.
Remove silicon chip surface remaining phosphorus source and oxide with the method for chemical corrosion then.Method with silk screen printing is weighing the top electrode of diffusion region part printed silver slurry as battery.Other preparation process of battery comprises makes antireflection layer, printing bottom electrode, oven dry and sintering etc.Concrete technological process is:
Silicon chip surface is handled (comprising texturing and cleaning), spraying phosphorus source, oven dry, LASER HEATING forms heavily doped region, high-temperature process forms light doping section, the edge etching, corrosion and cleaning silicon chip surface, deposition antireflection layer, the silk screen printing backplate, oven dry, silk screen printing front electrode (aiming at heavy diffusion zone), sintering.
Embodiment 2:
Select P type polysilicon chip, doping content 5 Ω cm.Silicon chip surface is through conventional surface-texturing and conventional clean process.
Place diffusion furnace to spread silicon chip.820～850 ℃ of temperature, 20～30 minutes time.After diffusion finished, it was the light diffusion zone of 250 Ω/ that silicon chip surface forms sheet resistance.When forming light diffusion zone, surface deposition the very high oxide layer (phosphorosilicate glass) of one deck phosphorus concentration.
Form the part of heavy doping contact zone with laser radiation silicon chip surface desire.Parameters such as the power density of control laser, focal length, bundle spot size, wavelength, translational speed make the illuminated part of silicon chip surface reach 1300～1400 ℃ temperature, and forming sheet resistance after laser radiation is the heavy diffusion zone of 20 Ω/.
Remove silicon chip surface remaining phosphorus source and oxide with the method for chemical corrosion then.Method with silk screen printing is weighing the top electrode of diffusion zone part printed silver slurry as battery.Other preparation process of battery comprises makes antireflection layer, printing bottom electrode, oven dry and sintering etc.Concrete technological process is:
Silicon chip surface is handled (comprising texturing and cleaning), and phosphorous diffusion forms light doping section, and LASER HEATING forms heavily doped region, edge etching, corrosion and cleaning silicon chip surface, deposition antireflection layer, silk screen printing backplate, oven dry, silk screen printing front electrode (aiming at heavy diffusion region), sintering.
Claims (6)
1. method that realizes crystal silicon solar cell selective emitter region, it is characterized in that earlier the uniform deposition phosphorus containg substances is as the phosphorus source on silicon chip, form heavily doped region by the laser selective heating in the silicon chip surface part then, at last silicon chip is carried out bulk heat treatmet and form light diffusion zone.
2. the method for realization crystal silicon solar cell selective emitter region according to claim 1 is characterized in that silicon chip is the P type, and resistivity is 0.2～30 Ω cm, and before the deposition phosphorus containg substances, handle through conventional cleaning and conventional surface-texturing on the surface.
3. the method for realization crystal silicon solar cell selective emitter region according to claim 1 is characterized in that the method that deposits phosphorus containg substances comprises the surface spraying or prints phosphorous slurry, at the phosphorous diffusion source layer of silicon chip surface pre-deposited.
4. the method for realization crystal silicon solar cell selective emitter region according to claim 1, it is characterized in that forming heavily doped zone with laser radiation silicon chip surface desire, make silicon chip surface partly be reached 900～1400 ℃ temperature by laser radiation, forming sheet resistance after laser radiation is the heavy diffusion region of 5～30 Ω/, the part that does not have laser radiation, temperature still remain on 20～800 ℃.
5. the method for realization crystal silicon solar cell selective emitter region according to claim 1, it is characterized in that silicon chip is carried out integral heat-processing method is conventional boiler tube heating or chain-conveyer furnace heating, 700～950 ℃ of heating-up temperatures, 2～100 minutes heating times, after the heating, it is 80～300 Ω/ lightly doped region that silicon chip surface forms sheet resistance.
6. method that realizes crystal silicon solar cell selective emitter region, it is characterized in that earlier the uniform deposition phosphorus containg substances is as the phosphorus source on silicon chip, silicon chip carries out bulk heat treatmet and forms light diffusion zone simultaneously, forms heavily doped region by the laser selective heating in the silicon chip surface part at last.
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Cited By (26)
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| CN101794844A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for realizing selective emitter of solar battery |
| WO2010105382A1 (en) * | 2009-03-17 | 2010-09-23 | Wuxi Suntech Power Co., Ltd. | Irradiating a plate using multiple co-located radiation sources |
| CN101916799A (en) * | 2010-07-22 | 2010-12-15 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing crystalline silicon solar cell selective emitter junction |
| CN101937941A (en) * | 2010-08-26 | 2011-01-05 | 常州天合光能有限公司 | Method for manufacturing crystalline silicon solar cell selective emitter junction |
| CN101997060A (en) * | 2010-10-25 | 2011-03-30 | 山东力诺太阳能电力股份有限公司 | Selective diffusion technology for crystalline silicon solar cell |
| CN102110743A (en) * | 2010-12-01 | 2011-06-29 | 江苏林洋太阳能电池及应用工程技术研究中心有限公司 | Method for manufacturing selective emitter solar cell from local laser melting phosphorosilicate glass |
| CN101656273B (en) * | 2008-08-18 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Selective emitter solar battery unit and manufacturing method thereof |
| CN101740661B (en) * | 2009-12-24 | 2011-09-07 | 浙江向日葵光能科技股份有限公司 | Method for preparing selective emission area of crystalline silicon solar cell |
| CN101728453B (en) * | 2008-10-28 | 2011-10-05 | 昱晶能源科技股份有限公司 | Method for manufacturing solar battery with differential doping |
| CN102222717A (en) * | 2010-04-16 | 2011-10-19 | 益通光能科技股份有限公司 | Method for forming solar cell |
| CN102254859A (en) * | 2010-05-17 | 2011-11-23 | 北大方正集团有限公司 | Method for manufacturing metal oxide semiconductor integrated circuit comprising Zener diode |
| CN102315320A (en) * | 2010-07-05 | 2012-01-11 | Snt能源技术有限公司 | Be used to form the method and apparatus of the selectivity reflector of solar cell |
| CN101800261B (en) * | 2009-02-05 | 2012-04-18 | Snt能源技术有限公司 | Method for forming selective emitter of solar cell and diffusion apparatus for forming the same |
| CN102487102A (en) * | 2010-12-03 | 2012-06-06 | 上海凯世通半导体有限公司 | Solar cell and preparation method thereof |
| CN102569498A (en) * | 2010-12-30 | 2012-07-11 | 上海凯世通半导体有限公司 | Solar battery and manufacture method thereof |
| CN102623548A (en) * | 2011-01-31 | 2012-08-01 | 英稳达科技股份有限公司 | Method for reading and writing identification code on surface of solar cell |
| CN102683493A (en) * | 2012-05-27 | 2012-09-19 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of N-type crystalline silicon double-sided back contact solar cell |
| CN103361733A (en) * | 2013-06-21 | 2013-10-23 | 中山大学 | Light external coaxial ultrasonic spraying laser doping system |
| CN104022188A (en) * | 2014-06-19 | 2014-09-03 | 常州天合光能有限公司 | Solar cell local-area doping method |
| CN105185864A (en) * | 2015-07-18 | 2015-12-23 | 广东爱康太阳能科技有限公司 | Passivated emitter region back surface partial diffused crystalline silicon solar cell preparation method |
| CN105322056A (en) * | 2015-12-07 | 2016-02-10 | 中国科学院半导体研究所 | Preparation method of solar cell of selective structure |
| US9401446B2 (en) | 2008-11-04 | 2016-07-26 | Lg Electronics Inc. | Silicon solar cell and method of manufacturing the same |
| CN107240621A (en) * | 2017-06-02 | 2017-10-10 | 泰州中来光电科技有限公司 | A kind of method for making selective doping structure |
| CN109980051A (en) * | 2019-04-29 | 2019-07-05 | 浙江晶科能源有限公司 | The manufacturing system and method for the full back contacts crystal silicon battery of p-type |
| CN112670367A (en) * | 2019-10-15 | 2021-04-16 | 浙江爱旭太阳能科技有限公司 | PERC solar cell and preparation method thereof |
| CN112701192A (en) * | 2021-01-29 | 2021-04-23 | 泰州中来光电科技有限公司 | Preparation method of selective doping structure of solar cell |
-
2007
- 2007-03-02 CN CNA2007100201903A patent/CN101022140A/en active Pending
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| CN101656273B (en) * | 2008-08-18 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Selective emitter solar battery unit and manufacturing method thereof |
| CN101728453B (en) * | 2008-10-28 | 2011-10-05 | 昱晶能源科技股份有限公司 | Method for manufacturing solar battery with differential doping |
| US9401446B2 (en) | 2008-11-04 | 2016-07-26 | Lg Electronics Inc. | Silicon solar cell and method of manufacturing the same |
| CN101800261B (en) * | 2009-02-05 | 2012-04-18 | Snt能源技术有限公司 | Method for forming selective emitter of solar cell and diffusion apparatus for forming the same |
| WO2010105382A1 (en) * | 2009-03-17 | 2010-09-23 | Wuxi Suntech Power Co., Ltd. | Irradiating a plate using multiple co-located radiation sources |
| CN101970168A (en) * | 2009-03-17 | 2011-02-09 | 无锡尚德太阳能电力有限公司 | Irradiating a plate using multiple co-located radiation sources |
| CN101740661B (en) * | 2009-12-24 | 2011-09-07 | 浙江向日葵光能科技股份有限公司 | Method for preparing selective emission area of crystalline silicon solar cell |
| CN101794844A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for realizing selective emitter of solar battery |
| CN102222717A (en) * | 2010-04-16 | 2011-10-19 | 益通光能科技股份有限公司 | Method for forming solar cell |
| CN102254859A (en) * | 2010-05-17 | 2011-11-23 | 北大方正集团有限公司 | Method for manufacturing metal oxide semiconductor integrated circuit comprising Zener diode |
| CN102315320A (en) * | 2010-07-05 | 2012-01-11 | Snt能源技术有限公司 | Be used to form the method and apparatus of the selectivity reflector of solar cell |
| CN101916799A (en) * | 2010-07-22 | 2010-12-15 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing crystalline silicon solar cell selective emitter junction |
| CN101916799B (en) * | 2010-07-22 | 2012-12-19 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing crystalline silicon solar cell selective emitter junction |
| CN101937941B (en) * | 2010-08-26 | 2012-07-18 | 常州天合光能有限公司 | Method for manufacturing crystalline silicon solar cell selective emitter junction |
| CN101937941A (en) * | 2010-08-26 | 2011-01-05 | 常州天合光能有限公司 | Method for manufacturing crystalline silicon solar cell selective emitter junction |
| CN101997060A (en) * | 2010-10-25 | 2011-03-30 | 山东力诺太阳能电力股份有限公司 | Selective diffusion technology for crystalline silicon solar cell |
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| CN102487102A (en) * | 2010-12-03 | 2012-06-06 | 上海凯世通半导体有限公司 | Solar cell and preparation method thereof |
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| CN102623548B (en) * | 2011-01-31 | 2016-01-06 | 英稳达科技股份有限公司 | Method for reading and writing identification code on surface of solar cell |
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| CN102683493A (en) * | 2012-05-27 | 2012-09-19 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of N-type crystalline silicon double-sided back contact solar cell |
| CN103361733B (en) * | 2013-06-21 | 2016-03-23 | 中山大学 | The outer coaxial ultrasonic atomization laser doping system of a kind of light |
| CN103361733A (en) * | 2013-06-21 | 2013-10-23 | 中山大学 | Light external coaxial ultrasonic spraying laser doping system |
| CN104022188B (en) * | 2014-06-19 | 2016-05-11 | 常州天合光能有限公司 | Solar battery local doping method |
| CN104022188A (en) * | 2014-06-19 | 2014-09-03 | 常州天合光能有限公司 | Solar cell local-area doping method |
| CN105185864A (en) * | 2015-07-18 | 2015-12-23 | 广东爱康太阳能科技有限公司 | Passivated emitter region back surface partial diffused crystalline silicon solar cell preparation method |
| CN105322056A (en) * | 2015-12-07 | 2016-02-10 | 中国科学院半导体研究所 | Preparation method of solar cell of selective structure |
| CN107240621A (en) * | 2017-06-02 | 2017-10-10 | 泰州中来光电科技有限公司 | A kind of method for making selective doping structure |
| CN107240621B (en) * | 2017-06-02 | 2019-06-11 | 泰州中来光电科技有限公司 | A method of making selective doping structure |
| CN109980051A (en) * | 2019-04-29 | 2019-07-05 | 浙江晶科能源有限公司 | The manufacturing system and method for the full back contacts crystal silicon battery of p-type |
| CN112670367A (en) * | 2019-10-15 | 2021-04-16 | 浙江爱旭太阳能科技有限公司 | PERC solar cell and preparation method thereof |
| CN112701192A (en) * | 2021-01-29 | 2021-04-23 | 泰州中来光电科技有限公司 | Preparation method of selective doping structure of solar cell |
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