CN102487091A - Novel back contact solar cell and method for manufacturing the same - Google Patents
Novel back contact solar cell and method for manufacturing the same Download PDFInfo
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- CN102487091A CN102487091A CN2010105682757A CN201010568275A CN102487091A CN 102487091 A CN102487091 A CN 102487091A CN 2010105682757 A CN2010105682757 A CN 2010105682757A CN 201010568275 A CN201010568275 A CN 201010568275A CN 102487091 A CN102487091 A CN 102487091A
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention provides a novel MWT back contact solar cell and a method for manufacturing the same. Holes of 2-5 columns are arranged on a crystalline silicon wafer; and except one column of the holes that are superposed with a central axis of the silicon wafer, the other columns form inclined angles with the central axis. Fine grid lines are printed on the right side of the crystalline silicon wafer as well as are connected with negative electrodes at the back side of the crystalline silicon wafer through silver pastes in the holes; and positive electrodes are at the back side of the crystalline silicon wafer; and the positive electrodes and the negative electrodes are arranged in a trapezoid shape. According to the novel back contact cell provided in the invention, an utilization rate of incident light is improved and the cell has a simple structure; when packaging is carried out, space between cells are small, so that the dimension of an assembly can be reduced and generating efficiency of a unit area assembly is improved; solder strips are interconnected linearly at a same side, thereby reducing the stress on the cell and effectively reducing a fragment rate; besides, the manufacturing method is especially suitable for a high efficient crystalline silicon solar cell and is suitable for manual series welding and interconnection; the manufacturing cost is low; and the novel back contact cell is suitable for large-scale production.
Description
Technical field
The present invention relates to a kind of crystal silicon solar energy battery and manufacturing approach thereof.
Background technology
Back contact solar cell has particular structure; Positive and negative two electrodes that are characterized in battery are all made on the back of the body surface of battery; Compare with traditional solar cell; Significantly reduce the power loss that battery front surface (sensitive surface) causes owing to electrode blocks, improved the utilance of incident sunlight; Second advantage is that positive and negative electrode is all made at cell backside, and the area of electrode is unrestricted, and the battery spacing is little when processing assembly, stress is low, especially is fit to ultra-thin solar cell; The 3rd advantage is that the battery front side outward appearance is more all even attractive in appearance, is particularly suitable for installing and using tool in urban architecture and some specific occasions etc.
At present; Common back of the body contact solar cell mainly contains following several types: 1, back side emitter structure: the back of the body contact battery (IBC battery) with the back side interdigited electrode of the Sunpower company of the U.S. is representative; This battery is high to the quality requirement of silicon chip; The silicon chip that adopts all is semiconductor grade high-purity monocrystalline silicon piece, and minority carrier lifetime is general to be required above 500 μ s; 2, emitter region break-through battery (EWT battery): generally at first in silicon substrate, hole; In front and rear surfaces and hole, diffuse to form emitter then; The electric current that the front emitter produces is guided to backplate by the conductive doped raceway groove in the hole; Because the conductivity of the conductive doped raceway groove in the hole is more much lower than metal material, this battery is general to require very highdensity hole to reduce series resistance; 3, metal piercing twines (MWT) or becket around (MWA) battery: the EWT battery of comparing; This battery is guided to backplate with the electric current that battery front side produces through hole or silicon chips periphery with conductive silver paste; The PUM battery of typical example such as Dutch ECN Research Institute; The electric current that the positive thin grid of battery converge is guided to the back side through the slurry of the silver in the hole, and the conductive metal foil through the battery below when cell package becomes assembly carries out interconnected.Comparatively speaking, it is comparatively simple that metal piercing twines (MWT) battery structure, only needs the laser beam drilling of minority just can meet the demands; But encapsulation technology requires high, need be to accurately aiming at (alignment error is less than 100um) between back side opposing electrode point and the metal forming, and technical difficulty is big; The realization means are complicated; Can't carry out by hand,, become a major reason technical sophistication that limits its development so cost is very high.
Summary of the invention
The present invention aims to provide a kind of new type of metal perforation winding-type back contact solar cell, can process with common polycrystalline or monocrystalline silicon piece, is fit to carry out manual encapsulation, dwindles size of components, reduces the packaging cost of back of the body contact battery, is suitable for large-scale production.
A kind of novel back contact solar cell; 2-5 row hole is arranged on the crystal silicon chip, and described hole is except that row that overlap with the silicon chip axis, and all the other each row have a slanted angle with the axis; The front of crystal silicon chip is printed with thin grid line; Thin grid line links to each other with the negative electrode at the crystal silicon chip back side through the slurry of the silver in the hole, and positive electrode also is positioned at the back side of crystal silicon chip, and positive and negative electrode is trapezoidal and is in tilted layout.
Further, said slanted angle is 1 °-10 °.
The described hole size is 50 μ m～2000 μ m, hole be distributed as 0.1-0.4/cm
2
Further, the number of every row hole is 4-30.
A kind of manufacturing approach of novel back contact solar cell may further comprise the steps:
A. on solar energy rank crystal silicon chip, beat 2-5 row hole with laser; Said each row hole is except that row that overlap with the axis; All the other each row have 1 °-10 ° slanted angle with the axis; Whole trapezoidal being in tilted layout of each row hole, hole is of a size of 50 μ m～2000 μ m, hole be distributed as 0.1-0.4/cm
2
B. the silicon chip after the punching is carried out preceding cleaning and texturing, remove the affected layer in silicon chip surface and the hole, reduce the recombination rate of photo-generated carrier, process matte at the battery front surface simultaneously and reduce reflectivity;
C. in silicon substrate deposit doped source and carry out two-sided diffusion and prepare pn knot;
D. the back is cleaned, and removes the surface of silicon oxide layer that contains diffuse source;
E. the vapor deposition antireflective film in the front of crystal silicon chip;
F. make thin grid, hole in the front of crystal silicon chip, making is trapezoidal positive and negative electrode and back surface field slurry overleaf;
G. sintering or annealing is to form good Ohmic contact;
The electrode of H. isolating opposed polarity.
The said doped source of step C is the compound or the mixture of III families such as phosphorous, boron, aluminium, antimony or gallium or V family dopant; Said deposition process comprises spraying, printing, gas source diffusion and other conventional deposition process.
The said antireflective film of step e is a silicon nitride film.
The method of the thin grid of the described making of step F, hole and backplate and back surface field slurry can be silk screen printing, vacuum evaporation, sputter or plating.
Isolation between the electrode of the said opposed polarity of step H is the method with chemical etching, plasma etching or laser scribing.
The novel back of the body provided by the invention contacts battery, has improved the utilance of incident ray, and simple in structure, the spacing during encapsulation between battery is littler; Can reduce the size of assembly, improve the efficient of unit are assembly generating, welding in the same side straight line interconnected; Reduced stress, can effectively reduce fragment rate, especially be fit to the high-efficiency crystal silicon solar cell of thin silicon sheet battery; Be fit to manual series welding and interconnected, low cost of manufacture is fit to large-scale production.
Description of drawings
Fig. 1 is the front schematic view of battery sheet of the present invention.
Fig. 2 is the schematic rear view of battery sheet of the present invention.
Fig. 3 is two battery sheet series weldings of the present invention sketch mapes together.
Among the figure: 1-hole, the thin grid line of 2-, 3-positive electrode, 4-negative electrode, 5-welding.
Embodiment
A kind of novel back contact solar cell, as shown in Figure 1,2-5 row hole 1 is arranged on the crystal silicon chip, hole 1 is of a size of 50 μ m～2000 μ m, hole 1 be distributed as 0.1-0.4/cm
2The number of every row hole 1 is 4-30, and each row hole 1 is except that row that overlap with the axis, and all the other each row have 1 ° of-10 ° of slanted angle with the axis; The front of crystal silicon chip is printed with thin grid line 2; Thin grid line 2 links to each other with the negative electrode 4 at the crystal silicon chip back side through the slurry of the silver in the hole 1, and positive electrode 3 also is positioned at the back side of crystal silicon chip, and positive and negative electrode is trapezoidal and is in tilted layout.
The laser beam drilling array that the novel back contact solar cell of the present invention is positive and the positive and negative electrode 3,4 at the back side all adopt unique trapezoidal layout of tilting; The positive and negative electrode 3,4 of adjacent cell sheet is on the same straight line; So just can use welding 5 to carry out manual welding easily; And positive and negative electrode 3,4 itself is in the same one side (back side) of battery sheet again, and the spacing between the adjacent cell sheet can be littler, effectively increased the filling rate of battery sheet in the assembly.
A kind of manufacturing approach of novel back contact solar cell may further comprise the steps:
A, go up punching at crystal silicon chip (comprising monocrystalline and polysilicon chip) with laser; Hole 1 shape can be circular, square, rectangle, triangle, prismatic etc.; Size is between 50 μ m～2000 μ m, and the quantity of hole 1 is that average every square centimeter silicon chip has 0.1～0.4 hole, is scattered in the 2-5 row; Hole is except that row that overlap with the silicon chip axis; All the other each row have 1 ° of-10 ° of slanted angle with the axis, and for the silicon chip of 156mm * 156mm, the quantity of hole 1 is greatly between 10～100.
B, clean and making herbs into wool before the silicon chip after the punching carried out, remove the affected layer in silicon chip surface and the hole, reduce the recombination rate of photo-generated carrier, process matte reduction reflectivity at the battery front surface simultaneously;
C, in above-mentioned silicon substrate deposit doped source and carry out two-sided diffusion and prepare pn knot.Said doped source is the compound or the mixture of III families such as phosphorous or boron or aluminium or antimony or gallium or V family dopant.Deposition process comprises spraying, printing, gas source diffusion and other conventional deposition process;
D, back are cleaned, and remove the surface of silicon oxide layer that contains diffuse source;
E, in the front of silicon chip the vapor deposition antireflective film; Preferred silicon nitride film also can use to have big refractive index, has the compatibility handled with silicon and with silicon the other materials of good interface characteristic is arranged; The dielectric material of visible transparent comprises TiO2, Al2O3, SiNxCy or SiNxOy etc.;
F, at positive thin grid 2, the hole 1 made of silicon chip, make overleaf and be trapezoidal positive and negative electrode 3,4 and back surface field slurry, should note the filling of electric conducting material in the hole 1, the preparation of back side opposing electrode.Make and adopt silk screen printing, vacuum evaporation or sputter and electric plating method;
G, sintering or annealing are to form good Ohmic contact;
The electrode of h, isolation opposed polarity comprises the zone that isolates the battery opposed polarity with methods such as chemical etching, plasma etching or laser scribings, prevents short circuit or shunt effect.
Make the embodiment 1 of novel back contact solar cell
(1) selecting thickness for use is that 120～300 μ m, resistivity are that P type monocrystalline or the polysilicon chip of 0.5～5 Ω cm is as substrate;
(2) laser beam drilling on silicon chip, hole 1 be shaped as circle, diameter is at 100～1000 μ m; Hole 1 quantity is every square centimeter 0.1～0.4 of silicon chip, and about 10～100, hole 1 is trapezoidal layout, and is as shown in Figure 1;
(3) use conventional chemical cleaning and texturing method to clean and texturing;
(4) use POCl3 diffuse source to carry out High temperature diffusion, the resistance of diffusion side is controlled at 40～100 Ω/;
(5) use HF/HCl solution to carry out the chemistry back and clean, remove the phosphorosilicate glass that diffusion back surface of silicon forms;
(6) with PECVD equipment vapor deposition SiNx antireflective film, refractive index is between 1.9～2.1, and thickness is at 70～90nm;
(7) silicon chip back side positive and negative electrode (main grid) 3,4 usefulness silk screen printings silver slurry makes positive and negative electrode be trapezoidal, and is as shown in Figure 2, prints aluminium back of the body field after the oven dry again, prints thin grid line 2 at last in the front;
(8) in chain-conveyer furnace, carry out sintering, make the front and back electrode all form good Ohmic contact;
(9) carry out laser scribing in the battery front side outer rim and isolate, carry out the peripheral laser scribing of main grid line of negative pole overleaf and isolate.
(10) carry out manual, semi-automatic or automatic series welding and interconnected with the above-mentioned battery sheet of making, shown in Figure 3 be two battery sheet series weldings together, be packaged into assembly.
Make the embodiment 2 of novel back contact solar cell
(1) adopting thickness is that 120～300 μ m, resistivity are that N type monocrystalline or the polysilicon chip of 0.5～30 Ω cm is as substrate;
(2) on silicon chip, carry out laser beam drilling, hole 1 be shaped as circle, diameter is at 100～1000 μ m, hole 1 quantity is 0.1～0.4 of every square centimeter of silicon chip, hole 1 is trapezoidal layout, and is as shown in Figure 1;
(3) use conventional chemical cleaning and texturing method to clean and texturing;
(4) use BBr3 diffuse source to carry out High temperature diffusion, the resistance of diffusion side is controlled at 40～100 Ω/;
(5) use HF/HCl solution to carry out the chemistry back and clean, remove the Pyrex that diffusion back surface of silicon forms;
(6) with ALD equipment evaporating Al
2O
3Antireflective film;
(7) silicon chip back side positive and negative electrode (main grid) 3,4 usefulness silk screen printings silver slurry makes positive and negative electrode be trapezoidal layout, and is as shown in Figure 2, makes passivation layer in electrodeless zone again after the oven dry, prints thin grid line 2 at last in the front;
(8) in chain-conveyer furnace, carry out sintering, make the front and back electrode all form good Ohmic contact;
(9) carry out laser scribing in the battery front side outer rim and isolate, carry out the peripheral laser scribing of anodal main grid line overleaf and isolate;
(10) carry out manual, semi-automatic or automatic series welding and interconnected with the above-mentioned battery sheet of making, shown in Figure 3 be two battery sheet series weldings together, be packaged into assembly.
Certainly; The present invention also can have other various embodiments; Under the situation that does not deviate from spirit of the present invention and essence thereof; Those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of invention.
Claims (9)
1. novel back contact solar cell; It is characterized in that: 2-5 row hole (1) is arranged on the crystal silicon chip, described hole (1) except that with row that the silicon chip axis overlaps, all the other each row have a slanted angle with the axis; The front of crystal silicon chip is printed with thin grid line (2); Thin grid line (2) links to each other with the negative electrode (4) at the crystal silicon chip back side through the slurry of the silver in the hole (1), and positive electrode (3) also is positioned at the back side of crystal silicon chip, and positive and negative electrode (3,4) is trapezoidal and is in tilted layout.
2. novel back contact solar cell according to claim 1 is characterized in that: said slanted angle is 1 °-10 °.
3. novel back contact solar cell according to claim 2 is characterized in that: described hole (1) size is 50 μ m～2000 μ m, hole (1) be distributed as 0.1-0.4/cm
2
4. novel back contact solar cell according to claim 3 is characterized in that: the number of every row hole (1) is 4-30.
5. the manufacture method of novel back contact solar cell according to claim 1: it is characterized in that: may further comprise the steps:
A. on solar energy rank crystal silicon chip, beat 2-5 row hole (1) with laser; Said each row hole (1) is except that row that overlap with the axis; All the other each row have 1 °-10 ° slanted angle with the axis; Each row hole (1) integral body is trapezoidal and is in tilted layout, and the size of hole (1) is 50 μ m～2000 μ m, hole (1) be distributed as 0.1-0.4/cm
2
B. the silicon chip after the punching is carried out preceding cleaning and texturing, remove the affected layer in silicon chip surface and the hole (1), reduce the recombination rate of photo-generated carrier, process matte at the battery front surface simultaneously and reduce reflectivity;
C. in silicon substrate deposit doped source and carry out two-sided diffusion and prepare pn knot;
D. the back is cleaned, and removes the surface of silicon oxide layer that contains diffuse source;
E. the vapor deposition antireflective film in the front of crystal silicon chip;
F. make thin grid, hole in the front of crystal silicon chip, make positive and negative electrode (3,4) and the back surface field slurry that is trapezoidal inclination overleaf;
G. sintering or annealing is to form good Ohmic contact;
The electrode of H. isolating opposed polarity.
6. the manufacture method of novel back contact solar cell according to claim 5: it is characterized in that: the said doped source of step C is the compound or the mixture of III families such as phosphorous, boron, aluminium, antimony or gallium or V family dopant; Said deposit comprises spraying, printing, gas source diffusion and other conventional deposition process.
7. the manufacture method of novel back contact solar cell according to claim 5: it is characterized in that: the said antireflective film of step e is a silicon nitride film.
8. the manufacture method of novel back contact solar cell according to claim 5: it is characterized in that: the method for the thin grid of the described making of step F, hole and backplate and back surface field slurry is silk screen printing, vacuum evaporation, sputter or plating.
9. the manufacture method of novel back contact solar cell according to claim 5: it is characterized in that: the isolation between the electrode of the said opposed polarity of step H is the method with chemical etching, plasma etching or laser scribing.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544129A (en) * | 2012-01-18 | 2012-07-04 | 四川钟顺太阳能开发有限公司 | Solar battery |
| CN102800762A (en) * | 2012-08-31 | 2012-11-28 | 英利能源（中国）有限公司 | Making method of MWT (Metal Wrap Through) silicon solar cell |
| CN103762083A (en) * | 2013-12-25 | 2014-04-30 | 中国科学院等离子体物理研究所 | Dye-sensitized solar cell for collecting electrons in back contact mode |
| CN104183660A (en) * | 2013-05-28 | 2014-12-03 | 苏州宇邦新型材料有限公司 | Concave-convex welding strip for solar assembly |
| CN107749405A (en) * | 2017-10-25 | 2018-03-02 | 无锡琨圣科技有限公司 | A kind of texturing device mechanical arm |
| CN108598187A (en) * | 2018-04-27 | 2018-09-28 | 苏州浩顺光伏材料有限公司 | A kind of simple solar battery sheet of welding method |
| CN112018207A (en) * | 2020-08-14 | 2020-12-01 | 隆基绿能科技股份有限公司 | Light-transmitting composite layer, laminated solar cell and preparation method thereof |
| WO2021243794A1 (en) * | 2020-06-03 | 2021-12-09 | 东方日升新能源股份有限公司 | Solar cell having decorative function, and preparation method and cell assembly |
| CN114122167A (en) * | 2021-12-14 | 2022-03-01 | 苏州腾晖光伏技术有限公司 | MWT battery positive pole structure |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544129A (en) * | 2012-01-18 | 2012-07-04 | 四川钟顺太阳能开发有限公司 | Solar battery |
| CN102800762A (en) * | 2012-08-31 | 2012-11-28 | 英利能源（中国）有限公司 | Making method of MWT (Metal Wrap Through) silicon solar cell |
| CN102800762B (en) * | 2012-08-31 | 2016-04-06 | 英利能源（中国）有限公司 | A kind of manufacture method of MWT solar cell |
| CN104183660A (en) * | 2013-05-28 | 2014-12-03 | 苏州宇邦新型材料有限公司 | Concave-convex welding strip for solar assembly |
| CN104183660B (en) * | 2013-05-28 | 2017-10-24 | 苏州宇邦新型材料股份有限公司 | A kind of solar components bumps welding |
| CN103762083A (en) * | 2013-12-25 | 2014-04-30 | 中国科学院等离子体物理研究所 | Dye-sensitized solar cell for collecting electrons in back contact mode |
| CN107749405A (en) * | 2017-10-25 | 2018-03-02 | 无锡琨圣科技有限公司 | A kind of texturing device mechanical arm |
| CN107749405B (en) * | 2017-10-25 | 2020-05-05 | 无锡琨圣科技有限公司 | Mechanical arm of texturing machine |
| CN108598187A (en) * | 2018-04-27 | 2018-09-28 | 苏州浩顺光伏材料有限公司 | A kind of simple solar battery sheet of welding method |
| WO2021243794A1 (en) * | 2020-06-03 | 2021-12-09 | 东方日升新能源股份有限公司 | Solar cell having decorative function, and preparation method and cell assembly |
| CN112018207A (en) * | 2020-08-14 | 2020-12-01 | 隆基绿能科技股份有限公司 | Light-transmitting composite layer, laminated solar cell and preparation method thereof |
| CN114122167A (en) * | 2021-12-14 | 2022-03-01 | 苏州腾晖光伏技术有限公司 | MWT battery positive pole structure |
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