CN208336240U - Solar battery and solar cell module - Google Patents
Solar battery and solar cell module Download PDFInfo
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- CN208336240U CN208336240U CN201821124764.1U CN201821124764U CN208336240U CN 208336240 U CN208336240 U CN 208336240U CN 201821124764 U CN201821124764 U CN 201821124764U CN 208336240 U CN208336240 U CN 208336240U
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- polysilicon layer
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- tunnel oxide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model is suitable for technical field of photovoltaic power generation, provides a kind of solar battery and solar cell module.Solar battery includes: substrate；The front of the substrate is equipped with front court, and the back side of the substrate is equipped with emitter；The upper surface of the front court is equipped with the first tunnel oxide, and first tunnel oxide and the surface of front gate line corresponding region are equipped with the first polysilicon layer；The surface of first tunnel oxide and extinction area corresponding region is equipped with the first antireflective film, and the surface of first polysilicon layer is equipped with front gate line；The emitter surface is equipped with the second tunnel oxide；The surface of second tunnel oxide is equipped with the second polysilicon layer；The surface of second polysilicon layer is equipped with back side grid line, removes in second polysilicon layer and is equipped with the second antireflective film with the surface of back side grid line corresponding region.The utility model can be improved the efficiency of solar battery.
Description
Technical field
The utility model belongs to technical field of photovoltaic power generation more particularly to a kind of solar battery and solar battery group
Part.
Background technique
Compound solar cell surface is to grow an important factor for restricting solar battery efficiency in solar cell surface
Passivating film is the common method for reducing surface recombination.The material of common passivating film includes but is not limited to silica, silicon nitride
And aluminium oxide, but the electric current generated is collected due to needing to prepare metal electrode on substrate, metal electrode needs and substrate contact
Ohmic contact is formed, causes the passivating film of metal electrode region to be destroyed, the region where metal electrode can generate greatly
Ground surface is compound, reduces the efficiency of solar battery.
Utility model content
In view of this, the utility model embodiment provides a kind of solar battery and solar cell module, to solve
The low problem of solar battery efficiency in the prior art.
The utility model embodiment first aspect provides a kind of solar battery, comprising: substrate；The front of the substrate
Equipped with front court, the back side of the substrate is equipped with emitter；The upper surface of the front court be equipped with the first tunnel oxide, described first
The surface of tunnel oxide and front gate line corresponding region is equipped with the first polysilicon layer；First tunnel oxide and extinction area
The surface of corresponding region is equipped with the first antireflective film, and the surface of first polysilicon layer is equipped with front gate line；The emitter table
Face is equipped with the second tunnel oxide；The surface of second tunnel oxide is equipped with the second polysilicon layer；Second polysilicon
The surface of layer is equipped with back side grid line, removes in second polysilicon layer and is equipped with the second anti-reflection with the surface of back side grid line corresponding region
Film；Wherein, the extinction area is the region in the front of the substrate in addition to the front gate line corresponding region.
Optionally, the substrate is n-type silicon substrate.
Optionally, the material of first tunnel oxide and second tunnel oxide is silica；It is described
The thickness of first tunnel oxide and second tunnel oxide is 1 nanometer to 5 nanometers.
Optionally, the thickness of first polysilicon layer and second polysilicon layer is 100 nanometers to 200 nanometers.
Optionally, the material of first antireflective film and second antireflective film is silicon nitride, first antireflective film
Thickness with second antireflective film is 60 nanometers to 80 nanometers.
Optionally, the sheet resistance range of the emitter is 60~80 Ω/, and the sheet resistance range of the front court is 20~60
Ω/□。
Optionally, the material of the front gate line is silver, and the material of the back side grid line is aerdentalloy.
Optionally, the impurity of the front court and first polysilicon layer is phosphorus impurities；The emitter and described
The impurity of second polysilicon layer is boron impurity.
The utility model embodiment first aspect provides a kind of solar cell module, including as the utility model is implemented
Solar battery described in example first aspect.
Existing beneficial effect is the utility model embodiment compared with prior art: the utility model embodiment by
The first tunnel oxide of front setting of substrate, is arranged the second tunnel oxide at the back side of substrate, and in the first tunnel oxide
The first polysilicon layer is set with the surface of front gate line corresponding region in layer, is arranged more than second on the surface of the second tunnel oxide
Crystal silicon layer, the passivating film of the first tunnel oxide and the first polysilicon layer as substrate face, the second tunnel oxide and second
Passivating film of the polysilicon layer as substrate back, the front gate line of preparation and the first polysilicon layer form Ohmic contact, back side grid
Line and the second polysilicon layer form Ohmic contact, since front gate line and back side grid line do not contact directly with substrate, to subtract
Few metal electrode and substrate interface it is compound.Also, since polysilicon layer can absorb incident light, by making the first polysilicon layer only
Region corresponding with front gate line in the first tunnel oxide is covered, region corresponding with extinction area does not cover the first polysilicon
Layer reduces absorption of first polysilicon layer to light, to improve the efficiency of solar battery.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of the technical scheme in the embodiment of the utility model
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only that this is practical new
Some embodiments of type for those of ordinary skill in the art without any creative labor, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the structural schematic diagram for the solar battery that an embodiment of the present invention provides；
Fig. 2 is the cross-sectional view for the solar battery preparation flow that another embodiment of the utility model provides；
Fig. 3 is the cross-sectional view for the solar battery preparation flow that the utility model another embodiment provides.
Specific embodiment
In being described below, for illustration and not for limitation, the tool of such as particular system structure, technology etc is proposed
Body details, to understand thoroughly the utility model embodiment.However, it will be clear to one skilled in the art that there is no these
The utility model also may be implemented in the other embodiments of detail.In other situations, omit to well-known system,
The detailed description of apparatus, circuit and method, in case unnecessary details interferes the description of the utility model.
In order to illustrate technical solution described in the utility model, the following is a description of specific embodiments.
Embodiment one
Referring to FIG. 1, a kind of solar battery, comprising: substrate 11；The front of the substrate 11 is equipped with front court 141, described
The back side of substrate 11 is equipped with emitter 142；The upper surface of the front court 141 is equipped with the first tunnel oxide 121, first tunnel
The surface for wearing oxide layer 121 and 161 corresponding region of front gate line is equipped with the first polysilicon layer 131；First tunnel oxide
121 are equipped with the first antireflective film 151 with the surface of extinction area corresponding region, and the surface of first polysilicon layer 131 is equipped with front
Grid line 161；142 surface of emitter is equipped with the second tunnel oxide 122；The surface of second tunnel oxide 122 is set
There is the second polysilicon layer 132；The surface of second polysilicon layer 132 is equipped with back side grid line 162, second polysilicon layer
The surface in the region in 132 in addition to 162 corresponding region of back side grid line is equipped with the second antireflective film 152；Wherein, the extinction area
For the region in the front of the substrate 11 in addition to 162 corresponding region of front gate line.
In the utility model embodiment, substrate 11 is the common substrate for preparing solar battery, and the utility model is implemented
In example, substrate 11 selects the silicon substrate of n-type doping, prepares N-shaped double-sided solar battery.Making herbs into wool processing is carried out to substrate 11,
11 surface of substrate forms the flannelette of pyramid, and the flannelette height of pyramid is 3 microns to 8 microns, is subtracted by making herbs into wool processing
Light absorption inside few 11 surface reflection of substrate and substrate 11.After making herbs into wool, polished backside processing is carried out to substrate 11, uses corrosion
Property solution corrosion substrate 11 the back side, the range of corrosion depth is 1.5 microns to 4 microns, and being handled by polished backside can mention
The reflectivity at high 11 back side of substrate.
As shown in Fig. 2, substrate 11 prepares the first tunnel oxide after making herbs into wool and polishing treatment, in the front of substrate 11
121, the second tunnel oxide 122 is prepared at the back side of substrate 11.It is molten using Strong oxdiatives such as nitric acid solutions in a kind of implementation
Liquid oxidation substrate 11 forms 121 layers of the first tunnel oxide and the second tunnel oxide 122, in another implementation, passes through height
It warms oxidizing process oxidation substrate 11 and prepares the first tunnel oxide 121 and the second tunnel oxide 122.First tunnel oxide
121 and second tunnel oxide 122 it is very thin, with guarantee realize tunnelling, selective passes through majority carrier, stop
Minority carrier, to further increase the service life of minority carrier.Preferably, the first tunnel oxide 121 and the second tunnelling
The thickness of oxide layer 122 is 1 nanometer to 5 nanometers.
By low-pressure chemical vapor deposition process respectively in the first tunnel oxide 121 with front gate line corresponding region
One polysilicon layer 131 of surface growth regulation, in two polysilicon layer 132 of surface growth regulation of the second tunnel oxide 122, by serving as a contrast
11 front doping phosphorus impurities of bottom form front court 141, and at 11 back side of substrate, doping boron impurity forms emitter 142, in doping process
In, phosphorus impurities can be equally adulterated in the first polysilicon layer 131, can equally adulterate boron impurity in the second polysilicon layer 132.A kind of reality
In existing mode, phosphorus impurities or boron impurity are adulterated by modes such as High temperature diffusion, ion implanting, printing doping slurries, it is another real
In existing mode, in low pressure chemical vapor deposition equipment when one polysilicon layer 131 of growth regulation, it is passed through phosphorus source in a device and carries out phosphorus
Doping in low pressure chemical vapor deposition equipment when two polysilicon layer 132 of growth regulation, is passed through boron source progress boron in a device and mixes
It is miscellaneous.First polysilicon layer 131 of doping can form good Ohmic contact, the second polysilicon layer of doping with front gate line
132 can form good Ohmic contact with back side grid line, also, front gate line and back side grid line do not connect directly with substrate
Touching reduces the compound of metal electrode and substrate interface.
Preferably, the sheet resistance range of the emitter 142 is 60 Ω/ to 80 Ω/, the sheet resistance model of the front court 141
It encloses for 20 Ω/ to 60 Ω/.
In one polysilicon layer 131 of growth regulation, in a kind of implementation, in the first tunnel oxide 121 and extinction area pair
It answers the surface in region to cover and covers plate, the first polysilicon layer of regrowth 131, then the first polysilicon layer 131 is only grown in the first tunnelling
The surface of oxide layer 121 and front gate line corresponding region, wherein extinction area is in 11 front of substrate except corresponding with front gate line 161
Region other than region.In this implementation, the position due to covering plate cannot accurately be controlled, and not be suitable for solar battery
Batch production.
In another implementation, as shown in Figure 3, comprising the following steps:
Step 1, respectively in one polysilicon layer 131 of surface growth regulation of first tunnel oxide 121, described
Two polysilicon layer 132 of surface growth regulation of two tunnel oxides 122, specifically, multiple substrates are put into quartz boat, wherein
In adjacent two panels substrate, substrate face connects with the front face of another substrate or the back side of substrate back and another substrate
Touching.For example, in surface one polysilicon layer 131 of growth regulation of the first tunnel oxide 121, the back side of first substrate and second
The rear-face contact of piece substrate, the rear-face contact at the back side of third piece substrate and the 4th substrate, and so on, make the front of substrate
Exposure, is then put into one polysilicon layer 131 of growth regulation in low pressure chemical vapor deposition equipment for quartz boat.In the second tunnel oxide
When surface two polysilicon layer 132 of growth regulation of layer 122, the positive front face with second substrate of first substrate, third
The front of piece substrate and the front face of the 4th substrate, and so on, make the back side exposure of substrate, is then put into quartz boat
Two polysilicon layer 132 of growth regulation in low pressure chemical vapor deposition equipment.
Step 2, respectively in one mask layer 211 of surface growth regulation of first polysilicon layer 131, more than described second
Two mask layer 212 of surface growth regulation of crystal silicon layer 132.Specifically, the material of the first mask layer 211 and the second mask layer 212 is equal
For silicon nitride, the thickness of the first mask layer 211 and the second mask layer 212 is 20 nanometers to 30 nanometers.Increased by plasma
Strong type chemical deposition process deposits the first mask layer 211 and the second mask layer 212.With one polysilicon layer 131 and second of growth regulation
The mode of polysilicon layer 132 is similar, and multiple substrates are put into quartz boat, in adjacent two panels substrate, substrate face with another
The rear-face contact of the front face or substrate back of substrate and another substrate, then quartz boat is put into plasma-enhanced
One mask layer 211 of growth regulation or the second mask layer 212 in chemical deposition equipment.
Step 3 is covered in first mask layer 211 with the surface of front gate line corresponding region and described second respectively
The anticorrosive slurry 22 of the surface printing of film layer 212, and carry out drying and processing.Anticorrosive slurry 22 is protected by anticorrosive slurry 22
The region of covering is not corroded.Anticorrosive slurry 22 is printed by silk-screen printing technique.
Substrate 11 after drying and processing is carried out the first chemical cleaning processing by step 4 in the first cleaning solution, removal
With the first mask layer 211 of extinction area corresponding region.First cleaning solution is the highly acid that hydrofluoric acid, nitric acid etc. can remove silicon nitride
Solution, it is preferred that the first cleaning solution is the hydrofluoric acid solution that concentration range is 5% to 8%, not by hydrofluoric acid solution removal
The first mask layer 211 covered by anticorrosive slurry 22, i.e. the first mask layer 211 of extinction area corresponding region.
Step 5, by the first chemical cleaning, treated that substrate 11 carries out at the second chemical cleaning in the second cleaning solution
Reason, the first polysilicon layer 131 and the anticorrosive slurry 22 of removal and extinction area corresponding region.Second cleaning solution is hydrogen
The alkaline solutions such as potassium oxide solution, sodium hydroxide solution, ammonium hydroxide, it is preferred that the second cleaning solution be concentration range be 1% to
3% potassium hydroxide solution.Anticorrosive slurry 22 is removed by potassium hydroxide solution, and do not covered by the first mask layer 211
First polysilicon layer 131, i.e., the first polysilicon layer 131 corresponding with extinction area, the first polycrystalline with front gate line corresponding region
Silicon layer 131 and the second polysilicon layer 132 will not be removed due to having the first mask layer 211 and the protection of the second mask layer 212.
Substrate 11 after second chemical cleaning is carried out third chemical cleaning by step 6 in the first cleaning solution again
Processing, the first mask layer 211 and the second mask layer 212 of removal and front gate line corresponding region.
The utility model embodiment removes the first polysilicon layer 131 corresponding with extinction area, technique by selective etch
Simply, it is suitable for mass production.
First antireflective film 151 cover the first polysilicon layer 131 surface and the first tunnel oxide 121 in extinction area pair
Answer the surface in region, wherein extinction area is region of 11 front of substrate in addition to front gate line 161.First antireflective film 151 and
The material of two antireflective films 152 is silicon nitride, with a thickness of 60 nanometers to 80 nanometers, the first antireflective film 151 and the second antireflective film 152
When thickness is greater than 80 nanometers.Subtracted by one antireflective film 151 of plasma enhanced chemical vapor deposition equipment growth regulation and second
Anti- film 152.
Front gate line 161 is formed, in substrate 11 in the front printing silver paste of substrate 11 by silk-screen printing technique
Back up silver aluminum slurry forms back side grid line 162.Then it is sintered, forms double-sided solar battery.The gold of printing
Belonging to slurry is that can penetrate slurry, after sintering processes, can penetrate metal paste and penetrate the first antireflective film 151 and the second antireflective film
152, the front gate line 161 of formation is contacted with the first polysilicon layer 131, forms good Ohmic contact, the back side grid line of formation
162 contact with the second polysilicon layer 132, form good Ohmic contact.
The utility model embodiment is by the first tunnel oxide 121 of front setting in substrate 11, at the back side of substrate
Second tunnel oxide 122 is set, and is arranged first with the surface of front gate line corresponding region in the first tunnel oxide 121
The second polysilicon layer 132,121 He of the first tunnel oxide is arranged on the surface of the second tunnel oxide 122 in polysilicon layer 131
First polysilicon layer 131 is used as the positive passivating film of substrate 11,132 conduct of the second tunnel oxide 122 and the second polysilicon layer
The passivating film of substrate back, the front gate line 161 of preparation and the first polysilicon layer 131 form Ohmic contact, back side grid line 162 with
Second polysilicon layer 152 forms Ohmic contact, since front gate line and 161 back side grid lines 162 do not contact directly with substrate, from
And reduce the compound of metal electrode and 11 interface of substrate.Also, since polysilicon layer can absorb incident light, by making the first polycrystalline
Region corresponding with front gate line in silicon layer 131 the first tunnel oxides 121 of covering, region corresponding with extinction area does not cover
First polysilicon layer 131 reduces the absorption of first 131 pairs of light of polysilicon layer, to improve the efficiency of solar battery.
Embodiment two
A kind of solar cell module including the solar battery as described in the embodiment of the present invention one, and has the present invention
Beneficial effect described in embodiment one.
Embodiment described above is only to illustrate the technical solution of the utility model, rather than its limitations；Although referring to before
Embodiment is stated the utility model is described in detail, those skilled in the art should understand that: it still can be with
It modifies the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；And
These are modified or replaceed, the spirit for various embodiments of the utility model technical solution that it does not separate the essence of the corresponding technical solution
And range, it should be included within the scope of protection of this utility model.
Claims (9)
1. a kind of solar battery characterized by comprising substrate；The front of the substrate is equipped with front court, the back of the substrate
Face is equipped with emitter；The upper surface of the front court is equipped with the first tunnel oxide, first tunnel oxide and front gate line
The surface of corresponding region is equipped with the first polysilicon layer；The surface of first tunnel oxide and extinction area corresponding region is equipped with the
The surface of one antireflective film, first polysilicon layer is equipped with front gate line；The emitter surface is equipped with the second tunnel oxide；
The surface of second tunnel oxide is equipped with the second polysilicon layer；The surface of second polysilicon layer is equipped with back side grid line,
The surface in the region in second polysilicon layer in addition to back side grid line corresponding region is equipped with the second antireflective film；Wherein, institute
State the region in the front that extinction area is the substrate in addition to the front gate line corresponding region.
2. solar battery as described in claim 1, which is characterized in that the substrate is n-type silicon substrate.
3. solar battery as described in claim 1, which is characterized in that first tunnel oxide and second tunnelling
The material of oxide layer is silica；The thickness of first tunnel oxide and second tunnel oxide is 1 to receive
Rice is to 5 nanometers.
4. solar battery as described in claim 1, which is characterized in that first polysilicon layer and second polysilicon
The thickness of layer is 100 nanometers to 200 nanometers.
5. solar battery as described in claim 1, which is characterized in that first antireflective film and second antireflective film
Material is silicon nitride, and the thickness of first antireflective film and second antireflective film is 60 nanometers to 80 nanometers.
6. solar battery as described in claim 1, which is characterized in that the sheet resistance range of the emitter be 60~80 Ω/
, the sheet resistance range of the front court are 20~60 Ω/.
7. solar battery as described in claim 1, which is characterized in that the material of the front gate line is silver, the back side
The material of grid line is aerdentalloy.
8. solar battery as described in claim 1, which is characterized in that the doping of the front court and first polysilicon layer
Impurity is phosphorus impurities；The impurity of the emitter and second polysilicon layer is boron impurity.
9. a kind of solar cell module, which is characterized in that including solar battery as claimed in any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821124764.1U CN208336240U (en) | 2018-07-16 | 2018-07-16 | Solar battery and solar cell module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821124764.1U CN208336240U (en) | 2018-07-16 | 2018-07-16 | Solar battery and solar cell module |
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| Publication Number | Publication Date |
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| CN208336240U true CN208336240U (en) | 2019-01-04 |
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| CN201821124764.1U Active CN208336240U (en) | 2018-07-16 | 2018-07-16 | Solar battery and solar cell module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666393A (en) * | 2018-07-16 | 2018-10-16 | 英利能源（中国）有限公司 | The preparation method and solar cell of solar cell |
| CN110931603A (en) * | 2019-12-11 | 2020-03-27 | 晶澳（扬州）太阳能科技有限公司 | Solar cell and preparation method thereof |
-
2018
- 2018-07-16 CN CN201821124764.1U patent/CN208336240U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666393A (en) * | 2018-07-16 | 2018-10-16 | 英利能源（中国）有限公司 | The preparation method and solar cell of solar cell |
| CN108666393B (en) * | 2018-07-16 | 2024-02-09 | 英利能源（中国）有限公司 | Solar cell and preparation method thereof |
| CN110931603A (en) * | 2019-12-11 | 2020-03-27 | 晶澳（扬州）太阳能科技有限公司 | Solar cell and preparation method thereof |
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