CN111303883B - Corrosive liquid and preparation method of chip table board - Google Patents
Corrosive liquid and preparation method of chip table board Download PDFInfo
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- CN111303883B CN111303883B CN201911032371.7A CN201911032371A CN111303883B CN 111303883 B CN111303883 B CN 111303883B CN 201911032371 A CN201911032371 A CN 201911032371A CN 111303883 B CN111303883 B CN 111303883B
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- 239000007788 liquid Substances 0.000 title claims abstract description 57
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 53
- 229920002120 photoresistant polymer Polymers 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 42
- 230000007797 corrosion Effects 0.000 claims description 37
- 238000005260 corrosion Methods 0.000 claims description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 claims description 30
- 239000008367 deionised water Substances 0.000 claims description 25
- 229910021641 deionized water Inorganic materials 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 24
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 claims description 19
- 238000001035 drying Methods 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 238000005406 washing Methods 0.000 claims description 16
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims 1
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 abstract description 23
- 239000002253 acid Substances 0.000 abstract description 19
- 239000002904 solvent Substances 0.000 abstract description 17
- 229910052736 halogen Inorganic materials 0.000 abstract description 15
- 150000002367 halogens Chemical class 0.000 abstract description 15
- 238000001312 dry etching Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- 238000004528 spin coating Methods 0.000 description 8
- 238000002156 mixing Methods 0.000 description 7
- 230000003068 static effect Effects 0.000 description 7
- JHWIEAWILPSRMU-UHFFFAOYSA-N 2-methyl-3-pyrimidin-4-ylpropanoic acid Chemical compound OC(=O)C(C)CC1=CC=NC=N1 JHWIEAWILPSRMU-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 150000004820 halides Chemical class 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- JOSWYUNQBRPBDN-UHFFFAOYSA-P ammonium dichromate Chemical compound [NH4+].[NH4+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O JOSWYUNQBRPBDN-UHFFFAOYSA-P 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 229910000039 hydrogen halide Inorganic materials 0.000 description 2
- 239000012433 hydrogen halide Substances 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- 229940071870 hydroiodic acid Drugs 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- CMMUKUYEPRGBFB-UHFFFAOYSA-L dichromic acid Chemical compound O[Cr](=O)(=O)O[Cr](O)(=O)=O CMMUKUYEPRGBFB-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- General Chemical & Material Sciences (AREA)
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- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention provides a corrosive liquid and a preparation method of a chip table board, and relates to the field of semiconductor chip preparation. An etching solution comprising: a solvent and a dichromate and a halogen acid dissolved in the solvent. The etching solution can solve the problems of uneven etching rate, rough etching surface and high etching cost caused by IPC dry etching of the existing chip, so that the etching rate is more uniform, the etching cost is reduced, and the surface etching quality is improved.
Description
Technical Field
The invention relates to the field of semiconductor chip preparation, in particular to a preparation method of a corrosive liquid and a chip table board.
Background
With the rapid development of optical communication technology, the optical communication transmission rate is faster and faster, and the photoelectric detector chip is used as a core chip in an optical communication system, and the requirement on the receiving rate is higher and higher, the chip with the plane type structure of the photoelectric detector adopts mature technology, the production yield is high, and the stability and the reliability are good, but the chip with the plane type structure cannot completely meet the requirement of the high-speed photoelectric detector chip on the broadband performance, and in order to improve the transmission rate, the high-speed photoelectric detector of 10GHz and above adopts a table-board type structure chip. In order to manufacture the mesa structure, the current mainstream method is to use an ICP device for dry etching, however, the ICP dry etching has the disadvantages of non-uniform implantation rate and rough etching surface, and the cost of the etching device is high, which brings cost pressure to enterprise production.
Disclosure of Invention
The first purpose of the invention is to provide a corrosive liquid to solve the problems of uneven etching rate, rough etching surface and high etching cost caused by IPC dry etching of the existing chip.
The second objective of the present invention is to provide a method for manufacturing a chip mesa, so as to solve the problems of the existing chip mesa that the etching rate is not uniform, the etching surface is rough, and the etching cost is high.
In order to achieve the purpose, the invention adopts the following technical scheme:
an etching solution comprising: a solvent and a dichromate and a halogen acid dissolved in the solvent.
Further, the mass of the dichromate added per liter of solvent is 10 to 20 g.
Further, the dichromate salt includes at least one of potassium dichromate, sodium dichromate, or ammonium dichromate.
Further, the dichromic acid is potassium dichromate.
Further, the volume fraction of the hydrogen halide in the halogen acid in the solvent is 8-20%.
Further, the halide acid includes at least one of hydrofluoric acid, hydrochloric acid, hydrobromic acid, or hydroiodic acid.
Further, the halide acid is hydrobromic acid.
Further, the volume concentration of the hydrobromic acid is 30-50%.
Further, the solvent is water.
A method for preparing a chip mesa comprises the steps of placing a substrate etched with photoresist in the etching solution of the invention for etching, and forming the mesa on the surface of the substrate.
Compared with the prior art, the technical scheme provided by the invention has the following advantages:
the corrosion solution provided by the invention comprises dichromate and halogen acid, wherein dichromate in the dichromate has strong corrosivity and plays a main role in corrosion of a chip; the halogen acid and the dichromate act together on the chip to form a non-selective etchant formulation for semiconductor chips, especially for In/InGaAs chips. The etching solution provided by the invention can not generate etching influence on the existing photoresist, so that the mesa structure with good etching surface uniformity and less damage to the surface of a chip can be obtained by etching the semiconductor chip, especially etching the In/InGaAs chip, by using the etching solution provided by the invention. The chip is corroded by the corrosion liquid provided by the invention, which belongs to wet corrosion, and compared with the traditional dry corrosion, the wet corrosion has the advantages of simple and convenient operation, low requirement on equipment and easy realization of large-scale batch production.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
FIG. 1 is a graph of mesa height of In/InGaAs substrate with different etching time In example 1 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In a first aspect, the present invention provides an etching solution comprising: a solvent and a dichromate and a halogen acid dissolved in the solvent.
The corrosion solution provided by the invention comprises dichromate and halogen acid, wherein dichromate in the dichromate has strong corrosivity and plays a main role in corrosion of a chip; the halogen acid and the dichromate act together on the chip to form a non-selective etchant formulation for semiconductor chips, especially for In/InGaAs chips. The etching solution provided by the invention can not generate etching influence on the existing photoresist, so that the mesa structure with good etching surface uniformity and less damage to the surface of a chip can be obtained by etching the semiconductor chip, especially etching the In/InGaAs chip, by using the etching solution provided by the invention. The chip is corroded by the corrosion liquid provided by the invention, which belongs to wet corrosion, and compared with the traditional dry corrosion, the wet corrosion has the advantages of simple and convenient operation, low requirement on equipment and easy realization of large-scale batch production.
The solvent may be selected according to the kinds of dichromate and halogen acid, as long as the dichromate and the halogen acid are dissolved without dissolving the chip and the photoresist.
In the present invention, the solvent is preferably water, and more preferably deionized water.
In some embodiments of the invention, the dichromate is added in a mass of 10-20g per liter of solvent. The amount of dichromate added is 10-20g/L, calculated on the basis of the volume of the solvent. The amount of dichromate added may be, for example, 10g/L or more, further 11g/L or more, further 12g/L or more, and the amount of potassium dichromate added may be, for example, 20g/L or less, further 19g/L or less, further 18g/L or less.
By optimizing the addition amount of the dichromate, the corrosion rate and the corrosion strength of the corrosive liquid can be effectively controlled.
Wherein the dichromate includes, but is not limited to, at least one of potassium dichromate, sodium dichromate, or ammonium dichromate; the dichromate is further preferably potassium dichromate.
The dichromate is selected as the corrosive, and can generate stronger corrosivity after the dichromate is ionized in the solvent to form dichromate radical, but the dichromate radical can not cause the corrosion of the photoresist, so that the needed table-board is obtained on the surface of the chip through corrosion.
In some embodiments of the invention, the hydrogen halide in the halide acid comprises from 8 to 20 volume percent of the solvent. The volume fraction of the halogen acid in the solvent may be, for example, 8% or more, further 9% or more, further 10g/L or more, and possibly, the volume fraction of the halogen acid in the solvent may be, for example, 20% or less, further 19% or less, further 18% or less.
The halogen acid plays a role in assisting corrosion in the corrosion process of the chip, the corrosion speed of the corrosive liquid can be further adjusted by adjusting the addition amount of the halogen acid, and the chip can form a flat corrosion surface.
Wherein the halide acid comprises at least one of hydrofluoric acid, hydrochloric acid, hydrobromic acid, or hydroiodic acid. Further, the halogen acid is preferably hydrobromic acid.
In a further embodiment of the invention, the concentration of hydrobromic acid is 30-50% by volume.
In a second aspect, the present invention provides a method for preparing a mesa of a chip, in which a substrate provided with a photoresist is etched in the etching solution of the first aspect of the present invention, and then a mesa is formed on the surface of the substrate.
It is to be understood that the substrate provided with the photoresist of the present invention is: and sequentially carrying out processes of spin coating, exposure, development, hardening and the like on the cleaned substrate, and forming a pattern on the surface of the substrate to be corroded by adopting the photoresist.
Compared with the dry etching, the wet etching has the following advantages: the method can be completed by only one photoresist protection without growing a dielectric film for blocking etching, the corrosion rate is basically in a linear relation, the repeatability is superior to that of the similar dry etching process, and the method is simple and stable in process, low in cost and suitable for mass production.
The etching solution of the present invention will be described in further detail with reference to specific examples.
Example 1
S10, preparing corrosive liquid
The ratio of each raw material of the corrosive liquid prepared in this example is as follows:
potassium dichromate: hydrobromic acid (40% volume fraction): water ═ 1 g: 20 ml: 60ml, and the preparation method of the corrosive liquid comprises the following steps:
s101, mixing 5g of potassium dichromate with 300ml of deionized water;
s102, adding 100ml of hydrobromic acid into the mixed liquid, and fully stirring to obtain the required corrosive liquid;
s20 chip mesa etching
S201, sequentially carrying out processes of spin coating, exposure, development, hardening and the like on the cleaned In/InGaAs substrate, and forming a pattern on the surface of the substrate to be corroded by adopting photoresist;
s202, placing the substrate with the pattern made of the photoresist into corrosive liquid, and standing and corroding for a certain time;
s203, taking out the substrate after the corrosion is finished, washing the surface with deionized water, and drying the surface with nitrogen;
and S204, removing the photoresist by using a photoresist removing solution, washing the photoresist by using deionized water, drying the photoresist by using nitrogen, and obtaining a table top on the surface of the chip.
Table 1 shows the table height data measured after 30 seconds, 60 seconds, 90 seconds, 120 seconds and 150 seconds of the static corrosion, respectively. FIG. 1 shows the mesa height at different etching times, and it can be seen from FIG. 1 that the etching rate of the etching solution of the present invention to the substrate is substantially linear and uniform, so that the etching height of the mesa can be effectively controlled by using the etching solution of the present invention.
Example 2
S10, preparing corrosive liquid
The ratio of each raw material of the corrosive liquid prepared in this example is as follows:
potassium dichromate: hydrobromic acid (40% volume fraction): water ═ 1.9 g: 45 ml: 100ml, the preparation method of the corrosive liquid comprises the following steps:
s101, mixing 5.7g of potassium dichromate with 300ml of deionized water;
s102, adding 135ml of hydrobromic acid into the mixed liquid, and fully stirring to obtain the required corrosive liquid;
s20 chip mesa etching
S201, sequentially carrying out processes of spin coating, exposure, development, hardening and the like on the cleaned In/InGaAs substrate, and forming a pattern on the surface of the substrate to be corroded by adopting photoresist;
s202, placing the substrate with the pattern made of the photoresist into corrosive liquid, and standing and corroding for a certain time;
s203, taking out the substrate after the corrosion is finished, washing the surface with deionized water, and drying the surface with nitrogen;
and S204, removing the photoresist by using a photoresist removing solution, washing the photoresist by using deionized water, drying the photoresist by using nitrogen, and obtaining a table top on the surface of the chip.
Table 1 shows the table height data measured after 30 seconds, 60 seconds, 90 seconds, 120 seconds and 150 seconds of the static corrosion, respectively.
Example 3
S10, preparing corrosive liquid
The ratio of each raw material of the corrosive liquid prepared in this example is as follows:
potassium dichromate: hydrobromic acid (40% volume fraction): water 3 g: 50 ml: 250ml, and the preparation method of the corrosive liquid comprises the following steps:
s101, mixing 3g of potassium dichromate with 250ml of deionized water;
s102, adding 50ml of hydrobromic acid into the mixed liquid, and fully stirring to obtain the required corrosive liquid;
s20 chip mesa etching
S201, sequentially carrying out processes of spin coating, exposure, development, hardening and the like on the cleaned In/InGaAs substrate, and forming a pattern on the surface of the substrate to be corroded by adopting photoresist;
s202, placing the substrate with the pattern made of the photoresist into corrosive liquid, and standing and corroding for a certain time;
s203, taking out the substrate after the corrosion is finished, washing the surface with deionized water, and drying the surface with nitrogen;
and S204, removing the photoresist by using a photoresist removing solution, washing the photoresist by using deionized water, drying the photoresist by using nitrogen, and obtaining a table top on the surface of the chip.
Table 1 shows the table height data measured after 30 seconds, 60 seconds, 90 seconds, 120 seconds and 150 seconds of the static corrosion, respectively.
Example 4
S10, preparing corrosive liquid
The ratio of each raw material of the corrosive liquid prepared in this example is as follows:
sodium dichromate: hydrobromic acid (40% volume fraction): water ═ 1 g: 20 ml: 60ml, and the preparation method of the corrosive liquid comprises the following steps:
s101, mixing 5g of sodium dichromate with 300ml of deionized water;
s102, adding 100ml of hydrobromic acid into the mixed liquid, and fully stirring to obtain the required corrosive liquid;
s20 chip mesa etching
S201, sequentially carrying out processes of spin coating, exposure, development, hardening and the like on the cleaned In/InGaAs substrate, and forming a pattern on the surface of the substrate to be corroded by adopting photoresist;
s202, placing the substrate with the pattern made of the photoresist into corrosive liquid, and standing and corroding for a certain time;
s203, taking out the substrate after the corrosion is finished, washing the surface with deionized water, and drying the surface with nitrogen;
and S204, removing the photoresist by using a photoresist removing solution, washing the photoresist by using deionized water, drying the photoresist by using nitrogen, and obtaining a table top on the surface of the chip.
Table 1 shows the table height data measured after 30 seconds, 60 seconds, 90 seconds, 120 seconds and 150 seconds of the static corrosion, respectively.
Example 5
S10, preparing corrosive liquid
The ratio of each raw material of the corrosive liquid prepared in this example is as follows:
potassium dichromate: hydrochloric acid (40% volume fraction): water ═ 1 g: 20 ml: 60ml, and the preparation method of the corrosive liquid comprises the following steps:
s101, mixing 5g of potassium dichromate with 300ml of deionized water;
s102, adding 100ml of hydrochloric acid into the mixed liquid, and fully stirring to obtain the required corrosive liquid;
s20 chip mesa etching
S201, sequentially carrying out processes of spin coating, exposure, development, hardening and the like on the cleaned In/InGaAs substrate, and forming a pattern on the surface of the substrate to be corroded by adopting photoresist;
s202, placing the substrate with the pattern made of the photoresist into corrosive liquid, and standing and corroding for a certain time;
s203, taking out the substrate after the corrosion is finished, washing the surface with deionized water, and drying the surface with nitrogen;
and S204, removing the photoresist by using a photoresist removing solution, washing the photoresist by using deionized water, drying the photoresist by using nitrogen, and obtaining a table top on the surface of the chip.
Table 1 shows the table height data measured after 30 seconds, 60 seconds, 90 seconds, 120 seconds and 150 seconds of the static corrosion, respectively.
Example 6
S10, preparing corrosive liquid
The ratio of each raw material of the corrosive liquid prepared in this example is as follows:
sodium dichromate: hydrochloric acid (40% volume fraction): water ═ 1 g: 20 ml: 60ml, and the preparation method of the corrosive liquid comprises the following steps:
s101, mixing 5g of sodium dichromate with 300ml of deionized water;
s102, adding 100ml of hydrochloric acid into the mixed liquid, and fully stirring to obtain the required corrosive liquid;
s20 chip mesa etching
S201, sequentially carrying out processes of spin coating, exposure, development, hardening and the like on the cleaned In/InGaAs substrate, and forming a pattern on the surface of the substrate to be corroded by adopting photoresist;
s202, placing the substrate with the pattern made of the photoresist into corrosive liquid, and standing and corroding for a certain time;
s203, taking out the substrate after the corrosion is finished, washing the surface with deionized water, and drying the surface with nitrogen;
and S204, removing the photoresist by using a photoresist removing solution, washing the photoresist by using deionized water, drying the photoresist by using nitrogen, and obtaining a table top on the surface of the chip.
Table 1 shows the table height data measured after 30 seconds, 60 seconds, 90 seconds, 120 seconds and 150 seconds of the static corrosion, respectively.
Comparative example 1
S10, preparing corrosive liquid
The ratio of each raw material of the corrosive liquid prepared in this example is as follows:
hydrobromic acid (40% volume fraction): water 20 ml: 60ml, and the preparation method of the corrosive liquid comprises the following steps:
mixing 100ml of hydrobromic acid and 300ml of deionized water, and fully stirring to obtain the required corrosive liquid;
s20 chip mesa etching
S201, sequentially carrying out processes of spin coating, exposure, development, hardening and the like on the cleaned In/InGaAs substrate, and forming a pattern on the surface of the substrate to be corroded by adopting photoresist;
s202, placing the substrate with the pattern made of the photoresist into corrosive liquid, and standing and corroding for a certain time;
s203, taking out the substrate after the corrosion is finished, washing the surface with deionized water, and drying the surface with nitrogen;
and S204, removing the photoresist by using a photoresist removing solution, washing the photoresist by using deionized water, drying the photoresist by using nitrogen, and obtaining a table top on the surface of the chip.
Table 1 shows the table height data measured after 30 seconds, 60 seconds, 90 seconds, 120 seconds and 150 seconds of the static corrosion, respectively.
TABLE 1
As can be seen from the data In Table 1, the etching solutions provided In examples 1-6 can effectively etch In/InGaAs substrates, while the etching solution In comparative example 1 has unstable etching rate, inconsistent step shapes obtained by etching, and poor effect.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The foregoing are merely exemplary embodiments of the present invention, which enable those skilled in the art to understand or practice the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (1)
1. A preparation method of a chip table-board is characterized by comprising the following steps:
preparing a corrosive liquid:
the proportion of each raw material of the corrosive liquid is as follows:
potassium dichromate: hydrobromic acid: water =1 g: 20 ml: 60ml, wherein the volume fraction of the hydrobromic acid is 40%; the preparation method of the corrosive liquid comprises the following steps:
5g of potassium dichromate is mixed with 300ml of deionized water;
adding 100ml of hydrobromic acid into the mixed liquid, and stirring to obtain a corrosive liquid;
etching the table top of the chip;
sequentially carrying out glue homogenizing, exposure, development and hardening processes on the cleaned In/InGaAs substrate, and forming a pattern on the surface of the substrate to be corroded by adopting a photoresist;
putting the substrate with the pattern made by the photoresist into corrosive liquid, and standing for corrosion;
taking out the substrate after the corrosion is finished, washing the surface with deionized water, and drying the surface with nitrogen;
and removing the photoresist by using photoresist removing liquid, washing the photoresist by using deionized water, and drying the photoresist by using nitrogen to obtain a table top on the surface of the chip.
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