CN110878208A - Acidic etching solution for improving silicon nitride etching uniformity - Google Patents
Acidic etching solution for improving silicon nitride etching uniformity Download PDFInfo
- Publication number
- CN110878208A CN110878208A CN201911088498.0A CN201911088498A CN110878208A CN 110878208 A CN110878208 A CN 110878208A CN 201911088498 A CN201911088498 A CN 201911088498A CN 110878208 A CN110878208 A CN 110878208A
- Authority
- CN
- China
- Prior art keywords
- etching solution
- etching
- silicon nitride
- ether
- phosphoric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 83
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 36
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 230000002378 acidificating effect Effects 0.000 title claims abstract description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 34
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000004094 surface-active agent Substances 0.000 claims abstract description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 6
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 12
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 12
- 229910019142 PO4 Inorganic materials 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 8
- 239000010452 phosphate Substances 0.000 claims description 8
- 150000002191 fatty alcohols Chemical class 0.000 claims description 7
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 6
- -1 alcohol ethers Chemical class 0.000 claims description 5
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 4
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 3
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 claims description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 2
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 claims description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 2
- RFVNOJDQRGSOEL-UHFFFAOYSA-N 2-hydroxyethyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCO RFVNOJDQRGSOEL-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 2
- 229940100242 glycol stearate Drugs 0.000 claims description 2
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 239000000654 additive Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 7
- 230000000996 additive effect Effects 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- WOXDLIHICZZCEK-UHFFFAOYSA-N S(=O)(=O)(O)O.C(CCCCCCCCCCC)(=O)C(C[Na])N Chemical compound S(=O)(=O)(O)O.C(CCCCCCCCCCC)(=O)C(C[Na])N WOXDLIHICZZCEK-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- KIAMPLQEZAMORJ-UHFFFAOYSA-N 1-ethoxy-2-[2-(2-ethoxyethoxy)ethoxy]ethane Chemical compound CCOCCOCCOCCOCC KIAMPLQEZAMORJ-UHFFFAOYSA-N 0.000 description 1
- IRHZRYIXJQVXNX-UHFFFAOYSA-N S(=O)(=O)(O)O.C(CCCCCCCCCCC)C(C[Na])N Chemical compound S(=O)(=O)(O)O.C(CCCCCCCCCCC)C(C[Na])N IRHZRYIXJQVXNX-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Abstract
The invention discloses an acidic etching solution for improving silicon nitride etching uniformity, which mainly comprises phosphoric acid accounting for more than or equal to 88 percent of the total weight of the etching solution, alcohol ether accounting for 0.01 to 10 percent of the total weight of the etching solution and surfactant accounting for 0.001 to 2 percent of the total weight of the etching solution. The alcohol ether in the etching solution can improve the wettability of the etching solution, and the surfactant can reduce the surface tension of the etching solution. Compared with the traditional method of only using phosphoric acid as the etching solution, the etching solution has the advantages of excellent wettability, low surface tension and low contact angle to the silicon nitride layer, and can obviously improve the wettability and the etching uniformity of the etching solution to the silicon nitride layer.
Description
Technical Field
The invention relates to an acidic etching solution for improving the etching uniformity of silicon nitride, which improves the wettability and surface tension of phosphoric acid by adding alcohol ether and a surfactant into the phosphoric acid so as to uniformly etch the silicon nitride.
Background
Silicon nitride is an insulating material with high chemical stability, and only hydrofluoric acid and hot phosphoric acid can slowly corrode silicon nitride. In semiconductor manufacturing processes, silicon nitride is typically etched with hot phosphoric acid, and up to 90nm processes also etch silicon nitride with hot phosphoric acid. However, with the rapid development of semiconductor processes, the feature size of devices is smaller and smaller, the integration level is higher and higher, and the requirements on each process node in the manufacturing process are higher and higher, such as the requirements on the uniformity of the etched wafer surface, the etching residue, the selectivity of the lower layer film and the like in the etching process.
When silicon nitride is etched only by using hot phosphoric acid, the phenomenon of unevenness appears on the surface of the wafer, which is reflected in that when thickness measurement of taking points at the same position is carried out before and after etching, the difference of the thickness before and after etching between detection points is obviously different. In order to solve the problem of non-uniform etching of silicon nitride, uniform etching of a silicon nitride layer can be achieved by adding alcohol ethers and surfactants to phosphoric acid.
Disclosure of Invention
The invention aims to provide an etching solution capable of uniformly etching a silicon nitride layer.
The invention relates to an acidic etching solution for improving the etching uniformity of silicon nitride, which comprises the following components: phosphoric acid accounting for more than or equal to 88 percent of the total weight of the etching solution, alcohol ether accounting for 0.01 to 10 percent of the total weight of the etching solution and surfactant accounting for 0.001 to 2 percent of the total weight of the etching solution.
Furthermore, the invention relates to the etching solution, wherein the concentration of the phosphoric acid is 82-87%.
Further, the present invention relates to the etching solution, wherein the content of alcohol ethers is preferably 0.01 to 2%.
Further, the present invention relates to the etching solution, wherein the content of the surfactant is preferably 0.001 to 0.5%.
Further, the present invention relates to the etching solution, wherein the alcohol ether is at least one selected from the group consisting of diethylene glycol monomethyl ether, propylene glycol butyl ether, dipropylene glycol methyl ether, diethylene glycol butyl ether, triethylene glycol ethyl ether, tripropylene glycol monomethyl ether, triethylene glycol monobutyl ether, and the like; the surfactant is at least one selected from fatty alcohol polyoxyethylene ether phosphate MOA-7P, nonylphenol polyoxyethylene ether NP-10, polyethylene glycol stearate EGMS, sodium alkylphenol polyoxyethylene ether sulfate, sodium lauroyl aminoethyl sulfate, alcohol ether carboxylate, etc.
Furthermore, when the etching solution of the invention is used for etching a silicon nitride layer, the etching temperature is 152-165 ℃, and the etching time is 5-60 min. By adding alcohol ether and surfactant into phosphoric acid, the wettability and surface tension of phosphoric acid are improved, and the wetting and etching uniformity of the etching solution on the silicon nitride layer are obviously improved.
In order to verify the etching uniformity of the silicon nitride film layer, the invention uses a wafer sample (with an initial thickness of about) only deposited with the silicon nitride film layer
). After the preparation of the etching solution is finished, firstly, detecting the surface tension of the etching solution by using a surface tension meter; and then cutting the silicon nitride wafer into small sample wafers of 1cm x 3cm, cleaning with ultrapure water and drying with nitrogen, and detecting the contact angle of the etching solution to the silicon nitride layer by using a contact angle measuring instrument. Before etching, using an elliptical polarization spectrometer to measure the thickness of the silicon nitride sample wafer at 6 points in different positions; then, putting the quartz flask filled with the etching solution into a heating jacket for heating, and after heating to a determined temperature, putting a silicon nitride sample wafer for etching; after etching, taking out the sample wafer, cleaning with hot ultrapure water and drying with nitrogen, measuring the thickness of 6 points at the position obtained before etching by using an elliptical polarization spectrometer, calculating the thickness difference of the 6 points before and after etching, and comparing the difference of the thickness difference of the 6 points.
Compared with the prior art that only phosphoric acid is used as the etching solution, the invention has the beneficial effects that:
the addition of alcohol ether and surfactant can obviously improve the wettability of phosphoric acid solution and reduce the surface tension of phosphoric acid solution, and effectively improve the wettability and etching uniformity of etching solution to silicon nitride layer.
Detailed Description
The present invention will be further illustrated with reference to the following specific examples, but the present invention is not limited to these examples.
The concentration of phosphoric acid selected when the etching solution is prepared is 85%, the etching temperature is 160 ℃, and the etching time is 10 min. Firstly, detecting the surface tension of the prepared etching solution, then cleaning a silicon nitride sample wafer by using ultrapure water and drying the silicon nitride sample wafer by using nitrogen, and then measuring a contact angle; after a silicon nitride sample wafer is cleaned by ultrapure water and dried by nitrogen before etching, 6 points at different positions on the silicon nitride sample wafer are taken for measuring the thickness of the silicon nitride sample wafer; after the etching was completed, the silicon nitride sample wafer was cleaned with hot ultrapure water and blow-dried with nitrogen, and then 6 points at the same positions as before the etching were taken for thickness measurement.
Example 1
The etching solution is prepared according to the total weight of 400g in the embodiment of the invention, phosphoric acid with the concentration of 85% is weighed firstly, then the additive is weighed and added into the phosphoric acid, and the components contained in the embodiment and the weighed mass of each component are shown in table 1.
The additives are propylene glycol butyl ether and fatty alcohol polyoxyethylene ether phosphate MOA-7P, and the addition amounts are 0.3% and 0.001% of the total mass respectively.
Example 2
The etching solution is prepared according to the total weight of 400g in the embodiment of the invention, phosphoric acid with the concentration of 85% is weighed firstly, then the additive is weighed and added into the phosphoric acid, and the components contained in the embodiment and the weighed mass of each component are shown in table 1.
The additives are triethylene glycol ethyl ether and lauroyl aminoethyl sodium sulfate, and the addition amounts of the additives are 0.25 percent and 0.002 percent of the total mass respectively.
Example 3
The etching solution is prepared according to the total weight of 400g in the embodiment of the invention, phosphoric acid with the concentration of 85% is weighed firstly, then the additive is weighed and added into the phosphoric acid, and the components contained in the embodiment and the weighed mass of each component are shown in table 1.
The additives are triethylene glycol monobutyl ether and lauryl aminoethyl sodium sulfate, and the addition amounts of the additives are 0.2% and 0.003% of the total mass respectively.
Example 4
The etching solution is prepared according to the total weight of 400g in the embodiment of the invention, phosphoric acid with the concentration of 85% is weighed firstly, then the additive is weighed and added into the phosphoric acid, and the components contained in the embodiment and the weighed mass of each component are shown in table 1.
The additives are diethylene glycol monomethyl ether and fatty alcohol-polyoxyethylene ether phosphate MOA-7P, and the addition amounts are 0.5% and 0.002% of the total mass respectively.
Example 5
The etching solution is prepared according to the total weight of 400g in the embodiment of the invention, phosphoric acid with the concentration of 85% is weighed firstly, then the additive is weighed and added into the phosphoric acid, and the components contained in the embodiment and the weighed mass of each component are shown in table 1.
The additives are diethylene glycol monomethyl ether, triethylene glycol diethyl ether and fatty alcohol polyoxyethylene ether phosphate MOA-7P, and the addition amounts are 0.3%, 0.1% and 0.001%, respectively.
Example 6
The etching solution is prepared according to the total weight of 400g in the embodiment of the invention, phosphoric acid with the concentration of 85% is weighed firstly, then the additive is weighed and added into the phosphoric acid, and the components contained in the embodiment and the weighed mass of each component are shown in table 1.
The additives are propylene glycol monobutyl ether, fatty alcohol polyoxyethylene ether phosphate MOA-7P and lauroyl aminoethyl sodium sulfate, and the addition amounts of the additives are 0.4%, 0.002% and 0.001% of the total mass respectively.
Comparative example
The ingredients contained in the comparative example are shown in Table 1, and the same treatment as in the example was carried out.
Comparative example 1 was pure phosphoric acid, and the total mass was 400 g.
Comparative example 2 was phosphoric acid, propylene glycol butyl ether, wherein the amount of propylene glycol butyl ether added was 0.5% of the total mass.
Comparative example 3 is phosphoric acid, fatty alcohol polyoxyethylene ether phosphate MOA-7P, wherein the addition amount of the fatty alcohol polyoxyethylene ether phosphate MOA-7P is 0.002% of the total mass.
As shown in Table 2, the etching solutions of examples had lower surface tension and contact angle than those of the etching solutions of comparative examples, and showed good uniformity of the silicon nitride layer after etching.
TABLE 1
TABLE 2
It is apparent that the above examples and comparative examples are only examples for clearly illustrating the present invention and are not to be construed as limiting the embodiments. It will be apparent to those skilled in the art that other variations and modifications may be made in the foregoing description, and it is not necessary or necessary to exhaustively enumerate all embodiments herein. And obvious variations or modifications are therefore intended to be included within the scope of the invention as claimed.
Claims (4)
1. An acidic etching solution for improving the etching uniformity of silicon nitride is characterized in that the components of the etching solution in the method comprise phosphoric acid which accounts for more than or equal to 88 percent of the total weight of the etching solution, 0.01 to 10 percent of alcohol ether and 0.001 to 2 percent of surfactant.
2. The acidic etching solution for improving etching uniformity of silicon nitride according to claim 1, wherein the concentration of phosphoric acid in the etching solution is 82-87%.
3. The acidic etching solution for improving etching uniformity of silicon nitride according to claim 1, wherein the alcohol ethers in the etching solution comprise at least one of diethylene glycol monomethyl ether, propylene glycol butyl ether, dipropylene glycol methyl ether, diethylene glycol butyl ether, triethylene glycol ethyl ether, tripropylene glycol monomethyl ether, and triethylene glycol monobutyl ether.
4. The acidic etching solution for improving etching uniformity of silicon nitride according to claim 1, wherein the surfactant in the etching solution comprises at least one of fatty alcohol polyoxyethylene ether phosphate MOA-7P, nonylphenol polyoxyethylene ether NP-10, polyethylene glycol stearate EGMS, sodium alkylphenol polyoxyethylene ether sulfate, sodium lauroyl aminoethyl sulfate, and alcohol ether carboxylate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911088498.0A CN110878208A (en) | 2019-11-08 | 2019-11-08 | Acidic etching solution for improving silicon nitride etching uniformity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911088498.0A CN110878208A (en) | 2019-11-08 | 2019-11-08 | Acidic etching solution for improving silicon nitride etching uniformity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110878208A true CN110878208A (en) | 2020-03-13 |
Family
ID=69729207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911088498.0A Pending CN110878208A (en) | 2019-11-08 | 2019-11-08 | Acidic etching solution for improving silicon nitride etching uniformity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110878208A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116023946A (en) * | 2022-12-28 | 2023-04-28 | 浙江奥首材料科技有限公司 | Silicon nitride mask layer etching solution, preparation method, application and etching method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130157427A1 (en) * | 2011-12-16 | 2013-06-20 | Soulbrain Co., Ltd. | Etching composition and method for fabricating semiconductor device using the same |
| KR20160028152A (en) * | 2014-09-03 | 2016-03-11 | 주식회사 이엔에프테크놀로지 | Etching composition for silicon oxide and silicon nitride |
| CN107573940A (en) * | 2016-07-04 | 2018-01-12 | Oci有限公司 | Silicon nitride film etching solution |
| US20180346811A1 (en) * | 2017-06-05 | 2018-12-06 | Versum Marerials US, LLC | Etching Solution For Selectively Removing Silicon Nitride During Manufacture Of A Semiconductor Device |
| CN109135752A (en) * | 2018-09-21 | 2019-01-04 | 湖北兴福电子材料有限公司 | A kind of phosphate etching solution and its preparation method |
| CN109478509A (en) * | 2017-03-15 | 2019-03-15 | 株式会社东芝 | The manufacturing method of etching solution, engraving method and electronic component |
-
2019
- 2019-11-08 CN CN201911088498.0A patent/CN110878208A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130157427A1 (en) * | 2011-12-16 | 2013-06-20 | Soulbrain Co., Ltd. | Etching composition and method for fabricating semiconductor device using the same |
| KR20160028152A (en) * | 2014-09-03 | 2016-03-11 | 주식회사 이엔에프테크놀로지 | Etching composition for silicon oxide and silicon nitride |
| CN107573940A (en) * | 2016-07-04 | 2018-01-12 | Oci有限公司 | Silicon nitride film etching solution |
| CN109478509A (en) * | 2017-03-15 | 2019-03-15 | 株式会社东芝 | The manufacturing method of etching solution, engraving method and electronic component |
| US20180346811A1 (en) * | 2017-06-05 | 2018-12-06 | Versum Marerials US, LLC | Etching Solution For Selectively Removing Silicon Nitride During Manufacture Of A Semiconductor Device |
| CN109054838A (en) * | 2017-06-05 | 2018-12-21 | 弗萨姆材料美国有限责任公司 | Etching solution for selectively removing silicon nitride in the manufacture of semiconductor devices |
| CN109135752A (en) * | 2018-09-21 | 2019-01-04 | 湖北兴福电子材料有限公司 | A kind of phosphate etching solution and its preparation method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116023946A (en) * | 2022-12-28 | 2023-04-28 | 浙江奥首材料科技有限公司 | Silicon nitride mask layer etching solution, preparation method, application and etching method |
| CN116023946B (en) * | 2022-12-28 | 2024-06-07 | 浙江奥首材料科技有限公司 | Silicon nitride mask layer etching solution, preparation method, application and etching method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7026782B2 (en) | Compositions and Methods for Etching Silicon Nitride-Containing Substrates | |
| US6383410B1 (en) | Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent | |
| KR101380487B1 (en) | Etching solution for silicon nitride layer | |
| KR101391605B1 (en) | A Composition for wet etching of silicon nitride or silicon oxide | |
| KR101279293B1 (en) | Etching liquid | |
| KR101169129B1 (en) | Etching solution | |
| TWI738244B (en) | Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device | |
| KR102006323B1 (en) | Etching solution composition and method of wet etching with the same | |
| CN114891509B (en) | High-selectivity buffer oxide etching solution | |
| CN110878208A (en) | Acidic etching solution for improving silicon nitride etching uniformity | |
| CN112410036B (en) | Low-selectivity etching solution for BPSG (boron-doped barium SG) and PETEOS (polyethylene terephthalate-ethylene-oxide-styrene) thin films | |
| WO2021067150A1 (en) | Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device | |
| CN115287071B (en) | C-free high-selectivity silicon nitride etching solution | |
| KR20150088356A (en) | Etching composition for silicon-based compound layer | |
| CN114351143B (en) | Germanium etching solution with controllable side etching amount | |
| CN116333744A (en) | Semiconductor silicon wafer etching solution, and preparation method and application thereof | |
| CN110095952A (en) | A kind of composition removing titanium nitride hard mask and/or etch residues for selectivity | |
| US20220228062A1 (en) | Etching Composition And Method For Selectively Removing Silicon Nitride During Manufacture Of A Semiconductor Device | |
| CN111303883B (en) | Corrosive liquid and preparation method of chip table board | |
| CN115287070B (en) | Inorganic high selectivity etching solution for stabilizing silicon nitride etching rate | |
| US20230357635A1 (en) | Silicon etchant and silicon etching method | |
| KR102457243B1 (en) | Etching composition for silicon nitride layer | |
| CN105543008A (en) | Detergent composition for cleaning treatment of low-K dielectric material | |
| KR102488515B1 (en) | Silicon nitride film etching method and manufacturing method of semiconductor device using the same | |
| CN114507527A (en) | ITO etching solution and preparation method and application method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200313 |
|
| RJ01 | Rejection of invention patent application after publication |