CN101976701B - Manufacturing method of back passivation cell - Google Patents
Manufacturing method of back passivation cell Download PDFInfo
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- CN101976701B CN101976701B CN201010238244A CN201010238244A CN101976701B CN 101976701 B CN101976701 B CN 101976701B CN 201010238244 A CN201010238244 A CN 201010238244A CN 201010238244 A CN201010238244 A CN 201010238244A CN 101976701 B CN101976701 B CN 101976701B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of solar cell production methods, in particular to a manufacturing method of a back passivation cell. The method comprise the following process steps of: firstly, washing and flocking a P-type monocrystalline silicon piece; carrying out B diffusion; putting into an oxidation furnace for growing wet oxygen; etching the front side of the silicon piece with etching slurry, and then washing the silicon piece with ionized water and ultrasound; carrying out P diffusion on the silicon piece; etching edges with plasmas; washing with a HF solution; putting into the oxidation furnace for growing thin and dry oxygen; depositing silicon nitride on the front side of the silicon piece, and depositing silicon nitride or silicon carbide or sputtering aluminum on the back side of the silicon piece; and finally carrying out electrode printing and sintering. In the invention, laminating passivation is simultaneously applied to the front side and the back side, meanwhile, the B diffusion is applied to the back side, and the cell has excellent properties of front and back passivation, therefore, the cell has favorable photoelectric response in a long-wave band, in addition, the back side subjected to laminating passivation has favorable reflection action so that protons reaching the back side are reflected to a cell piece once again, and thus, the protons can be utilized fully.
Description
Technical field
The present invention relates to manufacture of solar cells method and technology field, especially a kind of manufacturing approach of carrying on the back the passivation battery.
Background technology
Photovoltaic generation is a very important field during solar energy utilizes, and seeks new technology, new material, and new technology improves battery conversion efficiency, and reducing cost is a current very urgent task.
Conversion efficiency and solar cell are closely related in the reflectivity and the photoelectric respone of each wave band.Existing volume production battery is all more superior in the photoelectric respone of visible light wave range, but but very limited to the utilization of long-wave band photon.
Summary of the invention
The technical problem that the present invention will solve is: to utilize limited to the long-wave band photon and cause the technical problem of solar energy converting efficient in order to solve, the present invention provides a kind of manufacturing approach that can effectively utilize the back of the body passivation battery of long-wave band photon.
The technical solution adopted for the present invention to solve the technical problems is: a kind of manufacturing approach of carrying on the back the passivation battery, and its processing step is:
A. with resistivity the p type single crystal silicon sheet of 0.2～10 Ω cm, through carrying out sour making herbs into wool or alkali making herbs into wool after conventional the cleaning;
B. the silicon chip after the making herbs into wool is put into the B anemostat and spread, 870 ℃～970 ℃ of B diffusion, side's resistance is 40～100 Ω;
C. put into oxidation furnace growth wet oxygen, the SiO of heat growth
2Film thickness is 50～200nm, and oxidizing temperature is 850 ℃～1000 ℃;
D. with etching property slurry etching was carried out 5～30 minutes in the silicon chip front, etch away SiO
2And the Si of B diffused junction part, keep back side SiO
2Existence, add the ultrasonic cleaning silicon chip with deionized water then;
E. silicon chip is put into P and spread, the temperature of P diffusion is 800 ℃～900 ℃, and side's resistance is 40～70 Ω;
F. plasma edge etching;
G. using concentration is that 2%～15% HF cleaned 1～10 minute, removes positive PSG and back side SiO
2Part;
H. put into the dried oxygen of oxidation furnace thin, the thin dried oxygen thickness of growth is 5～20nm, and oxidizing temperature is 700～820 ℃;
I. silicon chip front deposited silicon nitride carries out the lamination passivation, and backside deposition silicon nitride or carborundum or sputtered aluminum are carried out the lamination passivation;
J. electrode printing, sintering.
Described etching property slurry main component is NH4HF2, accounts for 5%～35%.
The invention has the beneficial effects as follows; The present invention carries on the back the manufacturing approach of passivation battery, has adopted positive back laminate passivation simultaneously, and the B diffusion is adopted at the back side simultaneously; Possessed superior positive passivation and passivating back performance; Make battery have good photoelectric respone, and the back laminate passivation has good reflex in long-wave band, can make arrive the back side photon once more reflected back battery sheet utilize more fully.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Fig. 1 is the FB(flow block) of existing production technology.
Fig. 2 is the FB(flow block) of production technology of the present invention.
Embodiment
Combine accompanying drawing that the present invention is done further detailed explanation now.These accompanying drawings are the sketch map of simplification, basic structure of the present invention only is described in a schematic way, so it only show the formation relevant with the present invention.
Embodiment 1
Operating procedure is following:
A. select the p type single crystal silicon sheet, crystal face (100), doping content 0.5 Ω cm carries out routine and cleans surface wool manufacturing after the section;
B. the silicon chip after the making herbs into wool is put into the B anemostat and spread, the temperature of diffusion is 900 ℃, and the resistance of diffusion side is 70 Ω;
C. put into oxidation furnace growth wet oxygen, the SiO of heat growth
2Film thickness is 80nm, and oxidizing temperature is 900 ℃;
D. use main component etching to be carried out 15 minutes in the silicon chip front, etch away SiO as the etching property slurry of NH4HF2
2And the Si of B diffused junction part, keep back side SiO
2Existence, add the ultrasonic cleaning silicon chip with deionized water then;
E. silicon chip is put into P and spread, the temperature of diffusion is 830 ℃, and the resistance of diffusion side is 60 Ω;
F. plasma edge etching;
G. using concentration is that 10% HF cleaned 3 minutes, cleans positive PSG and back side SiO
2Part;
H. put into the dried oxygen of oxidation furnace thin, the thin dried oxygen thickness of growth is 10nm, and oxidizing temperature is 750 ℃;
I. the positive PECVD deposited silicon nitride of silicon chip carries out the lamination passivation, and thickness is 80nm, and back side PECVD deposited silicon nitride carries out the lamination passivation, and thickness is 60nm;
J. carry out electrode printing, battery process such as sintering.
Through test, the spectral response greater than the 1000nm long-wave band has been improved 7%, battery conversion efficiency has improved 2.7%.
Embodiment 2
Operating procedure is following:
A. select the p type single crystal silicon sheet, crystal face (100), doping content 2.5 Ω cm carry out routine and clean surface wool manufacturing after the section;
B. the silicon chip after the making herbs into wool is put into the B anemostat and spread, the temperature of diffusion is 950 ℃, and the resistance of diffusion side is 40 Ω;
C. put into oxidation furnace growth wet oxygen, the SiO of heat growth
2Film thickness is 120nm, and oxidizing temperature is 950 ℃;
D. use main component etching to be carried out 25 minutes in the silicon chip front, etch away the Si of SiO2 and B diffused junction part, keep back side SiO as the etching property slurry of NH4HF2
2Existence, add the ultrasonic cleaning silicon chip with deionized water then;
E. silicon chip is put into P and spread, the temperature of diffusion is 850 ℃, and the resistance of diffusion side is 70 Ω;
F. plasma edge etching;
G. using concentration is that 10% HF cleaned 6 minutes, cleans positive PSG and back side SiO
2Part;
H. put into the dried oxygen of oxidation furnace thin, the thin dried oxygen thickness of growth is 20nm, and oxidizing temperature is 800 ℃;
I. the positive PECVD deposited silicon nitride of silicon chip carries out the lamination passivation, and thickness is 80nm, and back side PECVD deposited silicon nitride carries out the lamination passivation, and thickness is 55nm;
J. carry out electrode printing, battery process such as sintering.
Through test, the spectral response greater than the 1000nm long-wave band has been improved 8%, battery conversion efficiency has improved 3%.
With above-mentioned foundation desirable embodiment of the present invention is enlightenment, and through above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this invention technological thought.The technical scope of this invention is not limited to the content on the specification, must confirm its technical scope according to the claim scope.
Claims (2)
1. manufacturing approach of carrying on the back the passivation battery, it is characterized in that: processing step is:
A. with resistivity the p type single crystal silicon sheet of 0.2～10 Ω cm, through carrying out sour making herbs into wool or alkali making herbs into wool after conventional the cleaning;
B. the silicon chip after the making herbs into wool is put into the B anemostat and spread, the temperature of B diffusion is 870 ℃～970 ℃, and side's resistance is 40～100 Ω;
C. put into oxidation furnace growth wet oxygen, the SiO of heat growth
2Film thickness is 50～200nm, and oxidizing temperature is 850 ℃～1000 ℃;
D. with etching property slurry etching was carried out 5～30 minutes in the silicon chip front, etch away SiO
2And the Si of B diffused junction part, the existence that keeps back side SiO2 adds the ultrasonic cleaning silicon chip with deionized water then;
E. silicon chip is put into P and spread, the temperature of P diffusion is 800 ℃～900 ℃, and side's resistance is 40～70 Ω;
F. plasma edge etching;
G. using concentration is that 2%～15% HF cleaned 1～10 minute, removes positive PSG and back side SiO
2Part;
H. put into the dried oxygen of oxidation furnace thin, the thin dried oxygen thickness of growth is 5～20nm, and oxidizing temperature is 700～820 ℃;
I. silicon chip front deposited silicon nitride carries out the lamination passivation, and backside deposition silicon nitride or carborundum or sputtered aluminum are carried out the lamination passivation;
J. electrode printing, sintering.
2. the manufacturing approach of the back of the body passivation battery described in claim 1, it is characterized in that: described etching property slurry main component is NH4HF2, and NH4HF2 content is 5%～35%.
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| CN201010238244A CN101976701B (en) | 2010-07-28 | 2010-07-28 | Manufacturing method of back passivation cell |
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| CN201010238244A CN101976701B (en) | 2010-07-28 | 2010-07-28 | Manufacturing method of back passivation cell |
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| CN101976701A CN101976701A (en) | 2011-02-16 |
| CN101976701B true CN101976701B (en) | 2012-10-17 |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263159A (en) * | 2011-05-31 | 2011-11-30 | 江阴鑫辉太阳能有限公司 | Process for preparing n-type solar cell by utilizing boron-phosphorus coamplification |
| CN102194897A (en) * | 2011-06-01 | 2011-09-21 | 奥特斯维能源（太仓）有限公司 | Silicon-carbide-doped film induced back surface field double-surface passivation solar battery and preparation method of double-surface passivation solar battery |
| CN103137782A (en) * | 2011-12-01 | 2013-06-05 | 浚鑫科技股份有限公司 | Method for separating P-N junction in monocrystal silicon battery piece and method for manufacturing solar battery |
| CN102709387B (en) * | 2012-05-08 | 2015-06-17 | 常州天合光能有限公司 | Etching process for selective transmission electrode |
| CN102797040B (en) * | 2012-08-22 | 2015-08-12 | 中国科学院电工研究所 | A kind of method of boron (B) diffusing, doping |
| CN103715295A (en) * | 2012-09-29 | 2014-04-09 | 江苏天宇光伏科技有限公司 | Production method of small-fabric surface and high-resistivity solar cell |
| CN102881776B (en) * | 2012-10-15 | 2016-06-01 | 浙江正泰太阳能科技有限公司 | A kind of preparation method and solar cell carrying on the back passivation crystal silicon solar energy battery |
| CN103579379B (en) * | 2013-11-08 | 2016-08-17 | 英利集团有限公司 | Crystal silicon solar batteries and preparation method thereof |
| CN103606597B (en) * | 2013-11-26 | 2016-10-05 | 英利集团有限公司 | Local doping back of the body passivation crystal silicon solar energy battery and preparation method thereof |
| CN105226115A (en) * | 2015-09-07 | 2016-01-06 | 中国东方电气集团有限公司 | A kind of N-type crystal silicon battery and preparation method thereof |
| CN113161230B (en) * | 2020-12-14 | 2022-05-17 | 安徽安芯电子科技股份有限公司 | Diffusion process of phosphorus-boron synchronous one-time diffusion graded junction chip |
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Address after: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee after: TRINA SOLAR Co.,Ltd. Address before: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee before: trina solar Ltd. |
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Address after: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee after: trina solar Ltd. Address before: 213031 Tianhe Road 2, Xinbei Electronic Industrial Park, Changzhou, Jiangsu Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |