CN101079452A - N-type underlay single-side extraction electrode crystal silicon cell and its making method - Google Patents
N-type underlay single-side extraction electrode crystal silicon cell and its making method Download PDFInfo
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- CN101079452A CN101079452A CNA2007100236298A CN200710023629A CN101079452A CN 101079452 A CN101079452 A CN 101079452A CN A2007100236298 A CNA2007100236298 A CN A2007100236298A CN 200710023629 A CN200710023629 A CN 200710023629A CN 101079452 A CN101079452 A CN 101079452A
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Abstract
The invention discloses an N type underlay single leading electrode crystalline silicon battery and preparing method. The product is equipped with N+ diffuse layer, the suede surface structure, the silicon nitride film layer from the interior to the exterior on the front of the N type underlay and N+ diffuse layer on the back of the N type underlay, the N+ diffuse layer exterior of the N type underlay back is equipped with sio2 layer, the intermediate between sio2 layer and the N type underlay is equipped with p+ diffuse layer, the exterior of sio2 layer is equipped with the positive electrode and the negative electrode, the positive electrode contracts the P+ diffuse layer by the contract hole in the sio2 layer, the positive electrode contracts the N+ diffuse layer by the contract hole in the sio2 layer. The preparing method comprises the following steps: selecting the material; forming the suede surface; diffusing N+ layer; forming the passive marked sio2 layer; etching; diffusing boron; making hole on the lasing back area; removing sio2 layer on the front of silicon chip; depositing the silicon nitride film; printing positive electrode and negative electrode. The product is provided with the rational structure, the high-effective ratio, the simple process and the simple operation.
Description
Technical field:
The present invention relates to a kind of crystal silicon cell and manufacture method.
Background technology:
Energy and environment are two big basic problems that the 21 century mankind face.Developing pollution-free, reproducible new forms of energy is the only ways that solve this two large problems.Signature in 1997 and Kyoto Protocol require countries in the world to change energy utilization patterns, gradate from coal and oil to be regenerative resource, and the minimizing greenhouse gas emission thoroughly changes the contradiction between human social development and energy shortage, the environmental pollution.
Solar cell can not produce any harmful substance with the conversion of solar energy electric energy when electric power is provided, have characteristics such as system is simple, easy to maintenance simultaneously.Still there are 6,000 ten thousand no electric populations in China at present, mainly is distributed in the area that conventional electrical network is difficult to, covers, and is very urgent to the demand of photovoltaic generation; Simultaneously China also faces increasing ambient pressure, and China's fossil fuel energy stock number is lower than world average, realize sustainable development, just must thoroughly restructure the use of energy, and greatly develops the novel energy that comprises photovoltaic generation.
At present, photovoltaic generation shared proportion in the energy is minimum, and cost is too high to be the major obstacle of restriction photovoltaic generation large-scale application.Development of New Generation high efficiency, solar cell cheaply; make its cost of electricity-generating near in addition be lower than conventional energy resource; can solve energy shortage and environmental protection problem that we face, realize national economy and social sustainable development, be of great immediate significance and far-reaching significance.
Solar cell can be an electric energy with conversion of solar energy, does not produce any harmful substance when electric power is provided, is the effective way that solves the energy and environment problem, realizes sustainable development.
In all kinds of solar cells, silicon solar cell occupies extremely important status.Photovoltaic industry and market develop rapidly with its annual speed more than 30% over past ten years, annual production is near 1000MW, wherein the efficient of crystal-silicon solar cell does not significantly improve, 15%～17% of the single crystal silicon solar cell efficient that industrialization is produced, polycrystal silicon cell will hang down 1～2 percentage point.In the laboratory, the high conversion efficiency of single crystal silicon solar cell has reached 24.7%, but because its structure and technology are too complicated, can't enter practical application.
Conventional monocrystalline silicon or polycrystalline silicon solar cell can not satisfy the have relatively high expectations demand of occasion of efficient, and for example condenser system or space flight and aviation are used.Therefore,, further improve the efficient of silicon solar cell, just have crucial meaning by developing new device architecture and industrialization technology.
Back of the body contact solar cell is with the whole back of the body surfaces of designing at battery of metal electrode and emitter region of solar cell.Be characterized in: 1, front surface does not have grid line, no shading loss; 2, the heavily doped electrode contact zone that will mix moves to the back of the body surface of battery, has avoided the influence of auger recombination to battery efficiency; 3, Zheng Mian silicon dioxide/metal level of knitting structuring back surface forms good sunken light action (calculating shows, can make effective light path improve 5 times).Therefore after adopting back of the body contact structures, the efficient of battery will be significantly improved.
Has only at present the relatively low N type silicon solar cell of two companies energy production cost in the world.One is the Sunpower of the U.S., and they open factory in Philippine recently and produce reduced form N type back side point contact solar cell.Because the diffusion of high performance P district is difficulty very, and make N type battery this P type diffusion technology must be arranged, therefore up to the present, the Sunpower of the U.S. produces high performance N type solar cell.And the solar battery structure of Sunpower be electrode, contacting metal all overleaf.Interconnected for the tiny diffusion region dot matrix of realizing 10 microns at the metal and the back side prevents the short circuit between the back metal again.The battery of Sunpower will be done repeatedly photoetching, oxidation and diffusion.Battery structure after Sunpower simplifies still is suitable complexity.The Sanyo of another family Japan.The performance of battery has improved greatly with the front and rear surfaces of senior amorphous silicon passivation battery in Sanyo.The efficient more than 21% that the battery of this two company all reaches.But their common issue with is the technology more complicated, compares with conventional N type solar cell, and cost is still too high.The production technology of the amorphous silicon passivating technique of Sanyo and the reduced form battery of Sunpower all holds in close confidence.
Summary of the invention:
The object of the present invention is to provide a kind of rational in infrastructure, the single face extraction electrode crystal silicon cell and the manufacture method of efficient height, N type substrate that cost performance is high.
Technical solution of the present invention is:
A kind of single face extraction electrode crystal silicon cell of N type substrate is characterized in that: comprise N type substrate, in the front of N type substrate, set gradually N from inside to outside
+Diffusion layer, suede structure, silicon nitride film layer are provided with N at the reverse side of N type substrate
+Diffusion layer is at the N of N type substrate reverse side
+Diffusion layer arranged outside SiO
2Layer is at SiO
2Between layer and the N type substrate P is set also
+Diffusion layer, SiO
2Layer arranged outside positive and negative electrode, positive electrode passes through SiO
2Contact hole and P in the layer
+The diffusion layer contact, negative electrode passes through SiO
2Contact hole and N in the layer
+The diffusion layer contact.
Positive and negative electrode is the comb electrode form.
A kind of manufacture method of single face extraction electrode crystal silicon cell of N type substrate is characterized in that: comprise the following steps: successively
(1) selecting resistance is the n type single crystal silicon sheet of 0.5～6 Ω cm, is 50～85 ℃ 10～20% sodium hydroxide solution with temperature, removes the affected layer on every limit; Then will be through the front of the n type single crystal silicon sheet of above-mentioned processing corrode with 1.5～2% sodium hydroxide solution and isopropyl alcohol and corrosion inhibiter sodium metasilicate, etching time is 20～40 minutes, and neutralization is cleaned then, forms suede structure;
(2) N
+Layer diffusion: the silicon chip that will handle through step (1) is under 840～900 ℃ in furnace temperature, carries out phosphorous diffusion, and phosphorous diffusion gets square resistance and is controlled at 20～80 Ω/square, all forms N at tow sides
+Diffusion layer;
(3) form the SiO that shelters of passivation
2Layer: will be after step (2) be handled silicon chip is 900～1100 ℃ in furnace temperature and handled 1～5 hour down, feed trichloroethanes simultaneously and mix oxychloride, all form SiO at the positive and negative of silicon chip
2Layer;
(4) etching, boron diffusion: the silicon chip reverse side is carried out laser ablation, and carry out the localization boron diffusion in etch areas, the condition of boron diffusion is: 1000～1100 ℃ of furnace temperature, form P at 1～3 hour time
+Diffusion layer;
(5) laser backside punching: punch SiO at the silicon chip back side with laser
2The contact hole of layer comprises being positioned at N
+The contact hole at diffusion layer position and be positioned at P
+The contact hole at diffusion layer position;
(6) with the SiO in silicon chip front
2Layer is removed;
(7) deposition silicon nitride film: at silicon chip front deposition silicon nitride film;
(8) printing positive and negative electrode: at silicon chip back up positive and negative electrode, oven dry, sintering get product.
The concentration of isopropyl alcohol and corrosion inhibiter sodium metasilicate is 1～3% in the step (1).
Adopt POCl in the step (2)
3Be diffuse source.
Adopting Boron tribromide in the step (4) is diffuse source.
Adopt the corrosive liquid of following weight proportion to remove the SiO in silicon chip front in the step (6)
2Layer: water: sulfuric acid: hydrofluoric acid: ammonium fluoride=1: (0.4～0.5): (0.05～0.10): (0.3～0.45).
The deposition thickness of silicon nitride film is 70～80 μ m in the step (7).
In the step (8), the area ratio of positive and negative electrode is 7: 3, and the extra fine wire bar of negative electrode is 100～200 μ m.
Product structure of the present invention is reasonable, and efficient height, cost performance height can be produced to scale the highest battery of present cost performance.Manufacture method is easy, easy to operate.
Description of drawings:
The utility model is described in further detail below in conjunction with drawings and Examples.
Accompanying drawing is the configuration diagram of an embodiment of the utility model.
Embodiment:
A kind of manufacture method of single face extraction electrode crystal silicon cell of N type substrate comprises the following steps: successively
(1) selecting resistance is the n type single crystal silicon sheet of 0.5～6 Ω cm (example 0.5 Ω cm, 3 Ω cm, 6 Ω cm), with temperature is the sodium hydroxide solution of 10～20% (example 10%, 15%, the 20%) concentration of 50～85 ℃ (50 ℃, 70 ℃, 85 ℃ of examples), removes the affected layer on every limit; To corrode by sodium hydroxide solution and 1～3% (example 1%, 2%, 3%) concentration isopropyl alcohol and 1～3% (example 1%, 2%, 3%) the concentration corrosion inhibiter sodium metasilicate with 1.5～2% (example 1.5%, 1.8%, 2%) concentration through the front of the n type single crystal silicon sheet of above-mentioned processing then, etching time is 20～40 minutes (example 20 minutes, 30 minutes, 40 minutes), neutralization is cleaned then, forms suede structure;
(2) N
+Layer diffusion: the silicon chip that will handle through step (1) is under 840～900 ℃ (840 ℃, 870 ℃, 900 ℃ of examples) in furnace temperature, adopts POCl
3Be diffuse source, carry out phosphorous diffusion, phosphorous diffusion gets square resistance and is controlled at 20～80 Ω/square (example 20 Ω/square, 50 Ω/square, 80 Ω/square), all forms N at tow sides
+Diffusion layer;
(3) form the SiO that shelters of passivation
2Layer: will get silicon chip after step (2) is handled is that 900～1100 ℃ (900 ℃, 1000 ℃, 1100 ℃ of examples) handle 1～5 hour (example 1 hour, 3 hours, 5 hours) down in furnace temperature, feed trichloroethanes simultaneously and mix oxychloride, all form SiO at the positive and negative of silicon chip
2Layer;
(4) etching, boron diffusion: the silicon chip reverse side is carried out laser ablation, and carry out the localization boron diffusion in etch areas, diffuse source adopts Boron tribromide, the condition of boron diffusion is: 1000～1100 ℃ of furnace temperature (1000 ℃, 1050 ℃, 1100 ℃ of examples), 1～3 hour time (example 1 hour, 2 hours, 3 hours), form P
+Diffusion layer;
(5) laser backside punching: punch SiO at the silicon chip back side with laser
2The contact hole of layer comprises being positioned at N
+The contact hole at diffusion layer position and be positioned at P
+The contact hole at diffusion layer position;
(6) adopt the corrosive liquid of following weight proportion to remove the SiO in silicon chip front
2Layer: water: sulfuric acid: hydrofluoric acid: ammonium fluoride=1: (0.4～0.5): (0.05～0.10): (0.3～0.45), (example 1: 0.4: 0.08: 0.45 or 1: 0.45: 0.05: 0.40,1: 0.5: 0.10: 0.3)
(7) deposition silicon nitride film: at silicon chip front deposition silicon nitride film, deposition thickness is 70～80 μ m (example 70 μ m, 75 μ m, 80 μ m);
(8) printing positive and negative electrode: at silicon chip back up positive and negative electrode, the area ratio of positive and negative electrode is 7: 3, and the extra fine wire bar of negative electrode is 100～200 μ m (example 100 μ m, 150 μ m, 200 μ m), and oven dry, sintering get product.
The product that obtains is a kind of single face extraction electrode crystal silicon cell of N type substrate, comprises N type substrate 1, and the front at N type substrate 1 sets gradually N from inside to outside
+ Diffusion layer 2, suede structure 3, silicon nitride film layer 4 are provided with N at the reverse side of N type substrate 1
+ Diffusion layer 5, N
+Diffusion layer 5 arranged outside SiO
2Layer 6 is at SiO
2Between layer 6 and the N type substrate 1 P is set also
+Diffusion layer 7, SiO
2Layer 6 arranged outside positive and negative electrode 8,9, positive electrode 8 passes through SiO
2Contact hole 10 and P in the layer 6
+Diffusion layer 7 contacts, negative electrode 9 passes through SiO
2Contact hole 11 and N in the layer 6
+ Diffusion layer 5 contacts.
Claims (9)
1, a kind of single face extraction electrode crystal silicon cell of N type substrate is characterized in that: comprise N type substrate, in the front of N type substrate, set gradually N from inside to outside
+Diffusion layer, suede structure, silicon nitride film layer are provided with N at the reverse side of N type substrate
+Diffusion layer is at the N of N type substrate reverse side
+Diffusion layer arranged outside SiO
2Layer is at SiO
2Between layer and the N type substrate P is set also
+Diffusion layer, SiO
2Layer arranged outside positive and negative electrode, positive electrode passes through SiO
2Contact hole and P in the layer
+The diffusion layer contact, negative electrode passes through SiO
2Contact hole and N in the layer
+The diffusion layer contact.
2, the single face extraction electrode crystal silicon cell of N type substrate according to claim 1, it is characterized in that: positive and negative electrode is the comb electrode form.
3, a kind of manufacture method of single face extraction electrode crystal silicon cell of N type substrate is characterized in that: comprise the following steps: successively
(1) selecting resistance is the n type single crystal silicon sheet of 0.5～6 Ω cm, is 50～85 ℃ 10～20% sodium hydroxide solution with temperature, removes the affected layer on every limit; Then will be through the front of the n type single crystal silicon sheet of above-mentioned processing corrode with 1.5～2% sodium hydroxide solution and isopropyl alcohol and corrosion inhibiter sodium metasilicate, etching time is 20～40 minutes, and neutralization is cleaned then, forms suede structure;
(2) N
+Layer diffusion: the silicon chip that will handle through step (1) is under 840～900 ℃ in furnace temperature, carries out phosphorous diffusion, and phosphorous diffusion gets square resistance and is controlled at 20～80 Ω/square, all forms N at tow sides
+Diffusion layer;
(3) form the SiO that shelters of passivation
2Layer: will be after step (2) be handled silicon chip is 900～1100 ℃ in furnace temperature and handled 1～5 hour down, feed trichloroethanes simultaneously and mix oxychloride, all form SiO at the positive and negative of silicon chip
2Layer;
(4) etching, boron diffusion: the silicon chip reverse side is carried out laser ablation, and carry out the localization boron diffusion in etch areas, the condition of boron diffusion is: 1000～1100 ℃ of furnace temperature, form P at 1～3 hour time
+Diffusion layer;
(5) laser backside punching: punch SiO at the silicon chip back side with laser
2The contact hole of layer comprises being positioned at N
+The contact hole at diffusion layer position and be positioned at P
+The contact hole at diffusion layer position;
(6) with the SiO in silicon chip front
2Layer is removed;
(7) deposition silicon nitride film: at silicon chip front deposition silicon nitride film;
(8) printing positive and negative electrode: at silicon chip back up positive and negative electrode, oven dry, sintering get product.
4, the manufacture method of the single face extraction electrode crystal silicon cell of N type substrate according to claim 3 is characterized in that: the concentration of isopropyl alcohol and corrosion inhibiter sodium metasilicate is 1～3% in the step (1).
5, the manufacture method of the single face extraction electrode crystal silicon cell of N type substrate according to claim 3 is characterized in that: adopt POCl in the step (2)
3Be diffuse source.
6, the manufacture method of the single face extraction electrode crystal silicon cell of N type substrate according to claim 3 is characterized in that: adopting Boron tribromide in the step (4) is diffuse source.
7, the manufacture method of the single face extraction electrode crystal silicon cell of N type substrate according to claim 3 is characterized in that: adopt the corrosive liquid of following weight proportion to remove the SiO in silicon chip front in the step (6)
2Layer: water: sulfuric acid: hydrofluoric acid: ammonium fluoride=1: (0.4～0.5): (0.05～0.10): (0.3～0.45).
8, the manufacture method of the single face extraction electrode crystal silicon cell of N type substrate according to claim 3 is characterized in that: the deposition thickness of silicon nitride film is 70～80 μ m in the step (7).
9, the manufacture method of the single face extraction electrode crystal silicon cell of N type substrate according to claim 3 is characterized in that: in the step (8), the area ratio of positive and negative electrode is 7: 3, and the extra fine wire bar of negative electrode is 100～200 μ m.
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| CN101976701A (en) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | Manufacturing method of back passivation cell |
| CN101976692A (en) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | N type back contact battery |
| CN102097527A (en) * | 2010-10-08 | 2011-06-15 | 常州天合光能有限公司 | Method for preparing N-type solar cells through masked diffusion |
| CN102214728A (en) * | 2010-04-09 | 2011-10-12 | 赵枫 | Technology for processing dead layers on surface of crystalline silicon solar cell |
| CN102339871A (en) * | 2011-07-30 | 2012-02-01 | 常州天合光能有限公司 | Positive dielectric film of sandwich structure suitable for RIE (reactive ion etching) texture and manufacturing method thereof |
| CN102569518A (en) * | 2012-01-17 | 2012-07-11 | 杨正刚 | Production process of N-type back contact solar cell |
| CN102969392A (en) * | 2012-10-17 | 2013-03-13 | 横店集团东磁股份有限公司 | Single-side polishing process of solar monocrystalline silicon battery |
| CN103208556A (en) * | 2012-01-13 | 2013-07-17 | 上海凯世通半导体有限公司 | Solar cell manufacturing method and solar cell |
| CN103858239A (en) * | 2011-11-16 | 2014-06-11 | 天合光能发展有限公司 | All-black-contact solar cell and fabrication method |
| CN107293614A (en) * | 2017-05-10 | 2017-10-24 | 东方环晟光伏（江苏）有限公司 | The method that cell piece generates thermal oxide passivation layer |
| CN107293613A (en) * | 2017-05-10 | 2017-10-24 | 东方环晟光伏（江苏）有限公司 | Realize the method that thermal oxide passivation layer cell piece makes |
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| JPH10117004A (en) * | 1996-10-09 | 1998-05-06 | Toyota Motor Corp | Converging type solar battery element |
| JP2007059644A (en) * | 2005-08-25 | 2007-03-08 | Toyota Motor Corp | Photovoltaic element |
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| CN102214728A (en) * | 2010-04-09 | 2011-10-12 | 赵枫 | Technology for processing dead layers on surface of crystalline silicon solar cell |
| CN101976692B (en) * | 2010-07-28 | 2012-08-08 | 常州天合光能有限公司 | N type back contact battery |
| CN101976701B (en) * | 2010-07-28 | 2012-10-17 | 常州天合光能有限公司 | Manufacturing method of back passivation cell |
| CN101976701A (en) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | Manufacturing method of back passivation cell |
| CN101976692A (en) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | N type back contact battery |
| CN102097527A (en) * | 2010-10-08 | 2011-06-15 | 常州天合光能有限公司 | Method for preparing N-type solar cells through masked diffusion |
| CN102339871A (en) * | 2011-07-30 | 2012-02-01 | 常州天合光能有限公司 | Positive dielectric film of sandwich structure suitable for RIE (reactive ion etching) texture and manufacturing method thereof |
| CN103858239A (en) * | 2011-11-16 | 2014-06-11 | 天合光能发展有限公司 | All-black-contact solar cell and fabrication method |
| CN103208556A (en) * | 2012-01-13 | 2013-07-17 | 上海凯世通半导体有限公司 | Solar cell manufacturing method and solar cell |
| CN102569518A (en) * | 2012-01-17 | 2012-07-11 | 杨正刚 | Production process of N-type back contact solar cell |
| CN102969392A (en) * | 2012-10-17 | 2013-03-13 | 横店集团东磁股份有限公司 | Single-side polishing process of solar monocrystalline silicon battery |
| CN107293614A (en) * | 2017-05-10 | 2017-10-24 | 东方环晟光伏（江苏）有限公司 | The method that cell piece generates thermal oxide passivation layer |
| CN107293613A (en) * | 2017-05-10 | 2017-10-24 | 东方环晟光伏（江苏）有限公司 | Realize the method that thermal oxide passivation layer cell piece makes |
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Address after: 226200 Jiangsu city in Qidong Province Economic Development Zone No. 888 Lin Yang Lu Patentee after: Jiangsu Linyang Solarfun Co., Ltd. Address before: 226200 Jiangsu city in Qidong Province Economic Development Zone No. 666 Lin Yang Lu Patentee before: Linyang New Energy-Source Co., Ltd., Jiangsu |
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Granted publication date: 20090211 Termination date: 20170611 |