CN107507872A - A kind of high performance solar batteries of two-sided doping and preparation method thereof - Google Patents
A kind of high performance solar batteries of two-sided doping and preparation method thereof Download PDFInfo
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- CN107507872A CN107507872A CN201710690414.5A CN201710690414A CN107507872A CN 107507872 A CN107507872 A CN 107507872A CN 201710690414 A CN201710690414 A CN 201710690414A CN 107507872 A CN107507872 A CN 107507872A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 127
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 127
- 239000010703 silicon Substances 0.000 claims abstract description 127
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000002002 slurry Substances 0.000 claims description 62
- 238000009792 diffusion process Methods 0.000 claims description 31
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 30
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical group BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 28
- 238000007639 printing Methods 0.000 claims description 27
- 238000002679 ablation Methods 0.000 claims description 24
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 229910019213 POCl3 Inorganic materials 0.000 claims description 15
- 229910015845 BBr3 Inorganic materials 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 235000008216 herbs Nutrition 0.000 claims description 12
- 238000001465 metallisation Methods 0.000 claims description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims description 12
- 239000011574 phosphorus Substances 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 210000002268 wool Anatomy 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 6
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000005297 pyrex Substances 0.000 claims description 6
- 238000003631 wet chemical etching Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- AFCIMSXHQSIHQW-UHFFFAOYSA-N [O].[P] Chemical compound [O].[P] AFCIMSXHQSIHQW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 2
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000009466 transformation Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000001172 regenerating effect Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 241001347978 Major minor Species 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a kind of high performance solar batteries of two-sided doping and preparation method thereof, including：Silicon chip (1), silicon chip (1) front set positive gate line electrode (8), and the back side sets back of the body metal electrode (9)；The positive gate line electrode (8) and the back side are set under back of the body metal electrode (9), carry out region doping respectively.The high performance solar batteries of the two-sided doping of the present invention utilize the technique of region doping, substantially increase cell photoelectric transformation efficiency, and positive and negative electrode is set rationally, and electric conductivity is good, and cost is low.
Description
Technical field
The present invention relates to solar cell preparation field, the specially a kind of high performance solar batteries and its system of two-sided doping
Make method.
Background technology
Under the overall background of global warming and fossil energy increasingly depleted, regenerative resource utilization are increasingly subject to
The attention of international community, greatly develop regenerative resource has turned into the common recognition of countries in the world.In various regenerative resources, solar energy
Photovoltaic is one of candidate of future source of energy solution as a kind of of clear energy sources.Solar energy with its cleaning, safely, take no
The significant advantage such as most, nexhaustible, it has also become regenerative resource with fastest developing speed.Predicted according to International Energy Agency (IEA), to 2030
Year global photovoltaic adds up installation amount and is expected to reach 1721GW, 4670GW will be further increased to the year two thousand fifty, development potentiality is huge.
With the fast development of photovoltaic industry, particularly by development in recent years, its application is increasingly extensive, and technique reaches its maturity.Too
Positive energy battery is the energy conversion device based on semi-conducting material, is the core of solar power generation, generate electricity effect to it
Rate requires that more and more higher, processing and fabricating cost require more and more lower, and outdoor service life requirement is increasingly longer.
The efficiency of solar cell can be determined by the design of various layers and electrode.In order that solar cell business
Change, it is necessary to the problem of overcoming inefficient and poor efficiency, therefore, it is necessary to a kind of efficiently solar cell and its manufacture method.
The content of the invention
To solve the above problems, the invention provides a kind of high performance solar batteries of two-sided doping and preparation method thereof；
The high performance solar batteries of the two-sided doping of the present invention utilize the technique of region doping, substantially increase cell photoelectric conversion effect
Rate, and positive and negative electrode is set rationally, electric conductivity is good, and cost is low.
To realize the technical purpose, the technical scheme is that：A kind of high performance solar batteries of two-sided doping, bag
Include：Silicon chip, the front side of silicon wafer set positive gate line electrode, and the back side sets back of the body metal electrode；
The front side of silicon wafer is lightly doped to form plating after pn-junction emitter stage and set front passivated reflection reducing comprehensively penetrates layer, the positive grid line
Correspondence position of the electrode on silicon chip sets front doping slurry area to be penetrated in front passivated reflection reducing on floor, in front doping slurry area
Ablation is slotted to form emitter stage heavily doped region, and the positive gate line electrode is set to repeating transmission emitter-base bandgap grading doped region；
The silicon chip back side is lightly doped comprehensively to be formed plating after lightly doped district and sets passivating back antireflection layer, the back of the body metal electricity
Correspondence position of the pole on silicon chip sets the back side to adulterate slurry area on passivating back antireflection layer, overleaf adulterates slurry area burning
Erosion fluting forms heavily doped region, and the back of the body metal electrode is set to heavily doped region.
Further, the front doping slurry sector width is not less than positive gate line electrode width, shape and the positive grid line electricity
Pole shape is consistent；The back side doping slurry sector width is not less than back of the body metal electrode width, shape and the back of the body metal electrode shape
Shape is consistent.
Further, the front doping slurry area ablation fluting, groove depth at least punch front passivated reflection reducing and penetrate layer；The back of the body
Face doping slurry area ablation fluting, groove depth at least punch passivating back antireflection layer.
Further, the positive gate line electrode can be one kind of 6~200 primary gate electrodes, and the positive gate line electrode and institute
It can be major-minor grid metal domain structure to state back of the body metal electrode figure, one kind of finger-fork type metallization domain structure.
Further, the pn-junction emitter stage doping sheet resistance is 80~120 Ω/；The lightly doped district doping sheet resistance is 70-
120Ω/□；Emitter stage heavily doped region and heavily doped region the doping sheet resistance is 40~80 Ω/.
Further, the silicon chip is N-type silicon chip or one kind of P-type silicon piece.
Further, positive gate line electrode and the back of the body metal electrode is that raw material is electroplated or silk-screen printing using silver paste
It is a kind of.
Further, the pn-junction emitter stage doped source of the N-type silicon chip is POCl3, and lightly doped district doped source is BBr3,
Front doping slurry area's doped source is starched for phosphorus, and the back side is adulterated slurry area's doped source and starched for boron；
The pn-junction emitter stage doped source of the P-type silicon piece is BBr3, and lightly doped district doped source is POCl3, front doping
Slurry area doped source is starched for boron, and the back side is adulterated slurry area's doped source and starched for phosphorus.
A kind of high performance solar batteries preparation method of two-sided doping, the silicon chip are the solar cell system of P-type silicon piece
Comprise the following steps as method：
S1：Alkali making herbs into wool is carried out using sodium hydroxide and flocking additive to p-type front side of silicon wafer；
82：Silicon chip after making herbs into wool in step S1 is diffused in boiler tube to be lightly doped to form pn-junction, doped source is trichlorine
Oxygen phosphorus；
S3：Silicon chip after diffusion pn-junction in step S2 is spread into generation by etching removal back side pn-junction and POCl3
Phosphorosilicate glass, and the lithographic method is HF acid selective wet chemical etchings；Etching is left positive pn-junction emitter stage；
S4：Silicon chip after being etched in step S3 is deposited into SiNx by pecvd process, is plated to follow-up diffusion barrier, and
Coating film thickness is 30-100nm；
S5：Silicon chip after plated film in step S4 is diffused in diffusion furnace tube to be lightly doped to form P+ areas, doped source is
BBr3；
S6：Silicon chip behind diffusion P+ areas in step S5 is cleaned in the mixed solution of hydrofluoric acid and nitric acid, removed
The follow-up diffusion barrier of silicon chip back side Pyrex and front；Back side P+ type lightly doped district is formed after cleaning；
S7：By silicon chip back side deposition of aluminium oxide+silicon nitride stack after being cleaned in step S6 into passivating back antireflection layer,
The redeposited silicon nitride in front penetrates layer into front passivated reflection reducing
S8：Silicon chip electrode zone printing doping slurry after being passivated in step S7；Wherein pn-junction transmitting pole-face printing phosphorus
Dry after slurry, then dried after P+ type lightly doped district face printing boron slurry, printing width is slightly wider than metallization grid line width；And dry
100~200 DEG C of temperature, 1~5min of drying time；
S9：Silicon chip after printing slurry in step S8 is subjected to ablation fluting in printed on both sides area, punches passivated reflection reducing layer,
N+ type emitter stage heavily doped regions are formed in front simultaneously, the back side forms P++ type heavily doped regions；
S10：Silicon chip after ablation fluting in step S9 is printed into back of the body metal electrode using silver paste at silicon chip back side fluting；
Positive gate line electrode, grid line covering front heavily doped region are printed at front side of silicon wafer fluting, and is sintered.
A kind of high performance solar batteries preparation method of two-sided doping, the silicon chip are the solar cell system of N-type silicon chip
Comprise the following steps as method：
The first step：Alkali making herbs into wool is carried out using sodium hydroxide and flocking additive to N-type silicon chip front；
Second step：Silicon chip after making herbs into wool in step S1 is diffused in boiler tube to be lightly doped to form n+ areas, doped source is
POCl3；
3rd step：Silicon chip after diffusion n+ lightly doped districts in step S2 is passed through to etch and removes positive n+ areas and POCl3
The phosphorosilicate glass of generation is spread, and the lithographic method is HF acid selective wet chemical etchings；The remaining back side n+ type lightly doped districts of etching；
4th step：Silicon chip after being etched in step S3 is deposited into SiNx by pecvd process, the back side is plated to and subsequently spreads guarantor
Sheath, and coating film thickness is 30-100nm；
5th step：Silicon chip after plated film in step S4 is diffused in diffusion furnace tube and is lightly doped to form P+ areas, is adulterated
Source is BBr3；
6th step：Silicon chip behind diffusion P+ areas in step S5 is cleaned in the mixed solution of hydrofluoric acid and nitric acid,
Remove front side of silicon wafer Pyrex and the follow-up diffusion barrier in the back side；Positive pn-junction emitter stage is formed after cleaning；
7th step：By silicon chip back side deposition of aluminium oxide+silicon nitride stack after being cleaned in step S6 into passivating back anti-reflection
Layer is penetrated, front cvd silicon oxide+silicon nitride penetrates layer into front passivated reflection reducing；
8th step：Silicon chip electrode zone printing doping slurry after being passivated in step S7；Wherein pn-junction transmitting pole-face print
Dry after brush boron slurry, then dried after n+ type lightly doped districts face printing phosphorus slurry, printing width is slightly wider than metallization grid line width；And
100~200 DEG C of drying temperature, 1~5min of drying time；
9th step：Silicon chip after printing slurry in step S8 is subjected to ablation fluting in printed on both sides area, passivation is punched and subtracts
Anti- layer, while P+ type emitter stage heavily doped region is formed in front, the back side forms n++ type heavily doped regions；
Tenth step：Silicon chip after ablation fluting in step S9 is printed into back of the body metal electricity using silver paste at silicon chip back side fluting
Pole；Positive gate line electrode is printed at front side of silicon wafer fluting, grid line covers positive P+ type heavily doped region, and is sintered.
The beneficial effects of the present invention are：
1) solar energy production technique of the invention is applied to p-type and N-type cell；
2) region doping is carried out in battery front side, reduces surface and meet speed, be advantageous to the collection of carrier, the back side is complete
Face is adulterated, and reduces carrier collection lateral resistance, and back side part heavy doping reduces contact resistance, is just had beneficial to more sub
Collect；
3) front and back carries out silk-screen printing or plating using the low Ag slurries of frit content, and metallize perfect matching
Electroplating technology, chromatography alignment issues are avoided, reduce metal electrode line width, so as to reduce the cost, improve battery efficiency, and be applicable
In double-side cell structure；
4) slotted metalization is applied to more main grid techniques, reduces shading loss, reduces slurry consumption, carrier is effectively collected
Rate is high, and conduction resistance is low.
To sum up, the high performance solar batteries of two-sided doping of the invention utilize the technique of region doping, substantially increase electricity
Pond electricity conversion, and positive and negative electrode is set rationally, electric conductivity is good, and cost is low.
Brief description of the drawings
Fig. 1 is each Rotating fields schematic diagram of the solar panel of the present invention.
Embodiment
Technical scheme will be clearly and completely described below.
As shown in figure 1, a kind of high performance solar batteries of two-sided doping, including：Silicon chip 1, it is characterised in that the silicon chip
1 front sets positive gate line electrode 8, and the back side sets back of the body metal electrode 9；
The front of the silicon chip 1 is lightly doped to form plating after pn-junction emitter stage 2 and set front passivated reflection reducing comprehensively penetrates layer 4, it is described just
Correspondence position of the gate line electrode 8 on silicon chip 1 sets front doping slurry area to be penetrated in front passivated reflection reducing on floor 4, is mixed in front
The ablation of miscellaneous slurry area is slotted to form emitter stage heavily doped region 6, and the positive gate line electrode 8 is set to repeating transmission emitter-base bandgap grading doped region 6；
The back side of silicon chip 1 is lightly doped comprehensively to be formed plating after lightly doped district 3 and sets passivating back antireflection layer 5, the back of the body gold
Belonging to correspondence position of the electrode 9 on silicon chip 1 sets the back side to adulterate slurry area on passivating back antireflection layer 5, overleaf adulterates
The ablation of slurry area is slotted to form heavily doped region 5, and the back of the body metal electrode 9 is set to heavily doped region 7.
Further, the front doping slurry sector width is not less than the positive width of gate line electrode 8, shape and the positive grid line electricity
The shape of pole 8 is consistent；The back side doping slurry sector width is not less than the back of the body width of metal electrode 9, shape and the back of the body metal electrode 9
Shape is consistent, and the mode of this region doping makes metal (electrode) carry out high-concentration dopant with silicon chip contact site, non-contact
Area is lightly doped.The isolating construction of such metallization and non-metallized regions can reduce the compound of surface and emission layer,
Horizontal height knot is formed, is advantageous to the collection of carrier, while reduce the contact resistance of front metal electrode and silicon so that short
Road electric current, open-circuit voltage and fill factor, curve factor are all preferably improved, so as to improve conversion efficiency.
Further, the front doping slurry area ablation fluting, groove depth at least punch front passivated reflection reducing and penetrate layer 4；It is described
Back side doping slurry area ablation fluting, groove depth at least punch passivating back antireflection layer 5.Positive back electrode is printed to groove, is collected
Electric current.
Further, the positive gate line electrode 8 can be one kind of 6~200 primary gate electrodes, and the positive He of gate line electrode 8
The back of the body figure of metal electrode 9 can be major-minor grid metal domain structure, one kind of finger-fork type metallization domain structure.
Further, it is 80~120 Ω/ that the pn-junction emitter stage 2, which adulterates sheet resistance,；The lightly doped district 3 adulterates sheet resistance
70-120Ω/□；Emitter stage heavily doped region 6 and heavily doped region 7 the doping sheet resistance is 40~80 Ω/.
Further, the silicon chip 1 is N-type silicon chip or one kind of P-type silicon piece.
Further, the positive gate line electrode 8 and back of the body metal electrode 9 are using silver paste plating or silk-screen printing.
Further, the doped source of pn-junction emitter stage 2 of the N-type silicon chip is POCl3, and the doped source of lightly doped district 3 is
BBr3, front doping slurry area's doped source are starched for phosphorus, and the back side is adulterated slurry area's doped source and starched for boron；
The doped source of pn-junction emitter stage 2 of the P-type silicon piece is BBr3, and the doped source of lightly doped district 3 is POCl3, and front is mixed
Miscellaneous slurry area doped source is starched for boron, and the back side is adulterated slurry area's doped source and starched for phosphorus.
A kind of high performance solar batteries preparation method of two-sided doping, the silicon chip 1 are the solar cell system of P-type silicon piece
Comprise the following steps as method：
S1：Alkali making herbs into wool is carried out using sodium hydroxide and flocking additive to p-type front side of silicon wafer；
S2：Silicon chip after making herbs into wool in step S1 is diffused in boiler tube to be lightly doped to form pn-junction, doped source is trichlorine
Oxygen phosphorus；
S3：Silicon chip after diffusion pn-junction in step S2 is spread into generation by etching removal back side pn-junction and POCl3
Phosphorosilicate glass, and the lithographic method is HF acid selective wet chemical etchings；Etching is left positive pn-junction emitter stage 2；
S4：Silicon chip after being etched in step S3 is deposited into SiNx by pecvd process, is plated to follow-up diffusion barrier, and
Coating film thickness is 30-100nm；
S5：Silicon chip after plated film in step S4 is diffused in diffusion furnace tube to be lightly doped to form P+ areas, doped source is
BBr3；
S6：Silicon chip behind diffusion P+ areas in step S5 is cleaned in the mixed solution of hydrofluoric acid and nitric acid, removed
The follow-up diffusion barrier of silicon chip back side Pyrex and front, wherein the follow-up diffusion barrier in front is dirty when being spread with BBr3
Dye, therefore need to wash；Back side P+ type lightly doped district 3 is formed after cleaning；
S7：By silicon chip back side deposition of aluminium oxide+silicon nitride stack after being cleaned in step S6 into passivating back antireflection layer
5, the redeposited silicon nitride in front penetrates layer 4 into front passivated reflection reducing；
S8：Silicon chip electrode zone printing doping slurry after being passivated in step S7；The wherein face of pn-junction emitter stage 2 printing phosphorus
Dry after slurry, then dried after the face of P+ type lightly doped district 3 printing boron slurry, printing width is slightly wider than metallization grid line width；And dry
Dry 100~200 DEG C of temperature, 1~5min of drying time；
S9：Silicon chip after printing slurry in step S8 is subjected to ablation fluting in printed on both sides area, punches passivated reflection reducing layer,
N+ type emitter stages heavily doped region 4 is formed in front simultaneously, the back side forms P++ types heavily doped region 5；
S10：Silicon chip after ablation fluting in step S9 is printed into back of the body metal electrode using silver paste at silicon chip back side fluting
9；Positive gate line electrode 8, grid line covering front heavily doped region 4 are printed at front side of silicon wafer fluting, and is sintered.
A kind of high performance solar batteries preparation method of two-sided doping, the silicon chip 1 are the solar cell system of N-type silicon chip
Comprise the following steps as method：
The first step：Alkali making herbs into wool is carried out using sodium hydroxide and flocking additive to N-type silicon chip front；
Second step：Silicon chip after making herbs into wool in step S1 is diffused in boiler tube to be lightly doped to form n+ areas, doped source is
POCl3；
3rd step：Silicon chip after diffusion n+ lightly doped districts in step S2 is passed through to etch and removes positive n+ areas and POCl3
The phosphorosilicate glass of generation is spread, and the lithographic method is or HF acid selective wet chemical etchings；The remaining back side n+ types of etching are lightly doped
Area 3；
4th step：Silicon chip after being etched in step S3 is deposited into SiNx by pecvd process, the back side is plated to and subsequently spreads guarantor
Sheath, and coating film thickness is 30-100nm；
5th step：Silicon chip after plated film in step S4 is diffused in diffusion furnace tube and is lightly doped to form P+ areas, is adulterated
Source is BBr3；
6th step：Silicon chip behind diffusion P+ areas in step S5 is cleaned in the mixed solution of hydrofluoric acid and nitric acid,
Remove front side of silicon wafer Pyrex and the follow-up diffusion barrier in the back side, the wherein follow-up diffusion barrier in back side quilt when spreading BBr3
Pollution, therefore need to wash；Positive pn-junction emitter stage 2 is formed after cleaning；
7th step：By silicon chip back side deposition of aluminium oxide+silicon nitride stack after being cleaned in step S6 into passivating back anti-reflection
Layer 5 is penetrated, front cvd silicon oxide+silicon nitride penetrates layer 4 into front passivated reflection reducing；
8th step：Silicon chip electrode zone printing doping slurry after being passivated in step S7；Wherein the face of pn-junction emitter stage 2 prints
Dry after brush boron slurry, then dried after the face of n+ types lightly doped district 3 printing phosphorus slurry, printing width is slightly wider than metallization grid line width；
And 100~200 DEG C of drying temperature, 1~5min of drying time；
9th step：Silicon chip after printing slurry in step S8 is subjected to ablation fluting or lbg in printed on both sides area,
Passivated reflection reducing layer is punched, while P+ type emitter stage heavily doped region 4 is formed in front, the back side forms n++ types heavily doped region 5；Ablation
Two-sided dopant residue can be removed after fluting in hydrofluoric acid and nitric acid mixed solution；
Tenth step：Silicon chip after ablation fluting in step S9 is printed into back of the body metal electricity using silver paste at silicon chip back side fluting
Pole 9；Positive gate line electrode 8 is printed at front side of silicon wafer fluting, grid line covers positive P+ type heavily doped region 4, and is sintered.And just
Gate line electrode 8 and back of the body metal electrode 9 can be used as the metallization scheme optimized using plating mode.
For the person of ordinary skill of the art, without departing from the concept of the premise of the invention, can also do
Go out several modifications and improvements, these belong to protection scope of the present invention.
Claims (10)
1. a kind of high performance solar batteries of two-sided doping, including：Silicon chip (1), it is characterised in that silicon chip (1) front is set
Positive gate line electrode (8) is put, the back side sets back of the body metal electrode (9)；
The silicon chip (1) front is lightly doped to form pn-junction emitter stage (2) and plate afterwards and sets front passivated reflection reducing and penetrate layer (4) comprehensively, described
Correspondence position of the positive gate line electrode (8) on silicon chip (1) sets front doping slurry area to be penetrated in front passivated reflection reducing on floor (4),
Slot to form emitter stage heavily doped region (6) in front doping slurry area's ablation, and the positive gate line electrode (8) is set to re-emissioning
On pole doped region (6)；
Silicon chip (1) back side is lightly doped to form lightly doped district (3) and plate afterwards comprehensively sets passivating back antireflection layer (5), the back of the body
Correspondence position of the metal electrode (9) on silicon chip (1) sets the back side to adulterate slurry area on passivating back antireflection layer (5),
Back side doping slurry area's ablation is slotted to form heavily doped region (5), and the back of the body metal electrode (9) is set to heavily doped region (7).
A kind of 2. high performance solar batteries of two-sided doping according to claim 1, it is characterised in that the front doping
Slurry sector width is not less than positive gate line electrode (8) width, and shape is consistent with described positive gate line electrode (8) shape；Mix at the back side
Miscellaneous slurry sector width is consistent with described back of the body metal electrode (9) shape not less than back of the body metal electrode (9) width, shape.
A kind of 3. high performance solar batteries of two-sided doping according to claim 1, it is characterised in that the front doping
Slurry area ablation fluting, groove depth at least punch front passivated reflection reducing and penetrate layer (4)；The back side doping slurry area ablation fluting, groove
It is deep to and punches passivating back antireflection layer (5) less.
A kind of 4. high performance solar batteries of two-sided doping according to claim 1, it is characterised in that the positive grid line electricity
Pole (8) can be one kind of 6~200 primary gate electrodes, and the positive gate line electrode (8) and described back of the body metal electrode (9) figure can
Think primary and secondary gratings metallization domain structure, one kind of finger-fork type metallization domain structure.
A kind of 5. high performance solar batteries of two-sided doping according to claim 1, it is characterised in that the pn-junction transmitting
Pole (2) doping sheet resistance is 80~120 Ω/；Lightly doped district (3) the doping sheet resistance is 70-120 Ω/；The emitter stage weight
Doped region (6) and heavily doped region (7) doping sheet resistance are 40~80 Ω/.
A kind of 6. high performance solar batteries of two-sided doping according to claim 1, it is characterised in that the silicon chip (1)
For N-type silicon chip or one kind of P-type silicon piece.
A kind of 7. high performance solar batteries of two-sided doping according to claim 1, it is characterised in that the positive grid line electricity
Pole (8) and back of the body metal electrode (9) are that raw material is electroplated or one kind of silk-screen printing using silver paste.
A kind of 8. high performance solar batteries of two-sided doping according to any one of claim 1 or 7, it is characterised in that institute
Pn-junction emitter stage (2) doped source for stating N-type silicon chip is POCl3, and lightly doped district (3) doped source is BBr3, front doping slurry
Area's doped source is starched for phosphorus, and the back side is adulterated slurry area's doped source and starched for boron；
Pn-junction emitter stage (2) doped source of the P-type silicon piece is BBr3, and lightly doped district (3) doped source is POCl3, and front is mixed
Miscellaneous slurry area doped source is starched for boron, and the back side is adulterated slurry area's doped source and starched for phosphorus.
Mixed 9. a kind of corresponding one kind of the high performance solar batteries of two-sided doping according to any one of claim 1 to 7 is two-sided
Miscellaneous high performance solar batteries preparation method, it is characterised in that the silicon chip (1) is the solar cell making side of P-type silicon piece
Method comprises the following steps：
S1：Alkali making herbs into wool is carried out using sodium hydroxide and flocking additive to p-type front side of silicon wafer；
S2：Silicon chip after making herbs into wool in step S1 is diffused in boiler tube to be lightly doped to form pn-junction, doped source is POCl3；
S3：Silicon chip after diffusion pn-junction in step S2 is passed through to the phosphorus silicon for etching and removing back side pn-junction and POCl3 diffusion generation
Glass, and the lithographic method is HF acid selective wet chemical etchings；Etching is left positive pn-junction emitter stage (2)；
S4：Silicon chip after being etched in step S3 is deposited into SiNx by pecvd process, is plated to follow-up diffusion barrier, and plated film
Thickness is 30-100nm；
S5：Silicon chip after plated film in step S4 is diffused in diffusion furnace tube and is lightly doped to form P+ areas, doped source BBr3；
S6：Silicon chip behind diffusion P+ areas in step S5 is cleaned in the mixed solution of hydrofluoric acid and nitric acid, removes silicon chip
The follow-up diffusion barrier of back side Pyrex and front；Back side P+ type lightly doped district (3) is formed after cleaning；
S7：By silicon chip back side deposition of aluminium oxide+silicon nitride stack after being cleaned in step S6 into passivating back antireflection layer (5),
The redeposited silicon nitride in front penetrates layer (4) into front passivated reflection reducing
S8：Silicon chip electrode zone printing doping slurry after being passivated in step S7；Wherein pn-junction emitter stage (2) face printing phosphorus slurry
After dry, then P+ type lightly doped district (3) face printing boron slurry after dry, printing width than metallize grid line width it is slightly wide；And dry
Dry 100~200 DEG C of temperature, 1~5min of drying time；
S9：Silicon chip after printing slurry in step S8 is subjected to ablation fluting in printed on both sides area, punches passivated reflection reducing layer, simultaneously
N+ type emitter stage heavily doped regions (4) are formed in front, the back side forms P++ types heavily doped region (5)；
S10：Silicon chip after ablation fluting in step S9 is printed into back of the body metal electrode (9) using silver paste at silicon chip back side fluting；
Positive gate line electrode (8), grid line covering front heavily doped region (4) are printed at front side of silicon wafer fluting, and is sintered.
Mixed 10. a kind of corresponding one kind of the high performance solar batteries of two-sided doping according to any one of claim 1 to 7 is two-sided
Miscellaneous high performance solar batteries preparation method, it is characterised in that the silicon chip (1) is the solar cell making side of N-type silicon chip
Method comprises the following steps：
The first step：Alkali making herbs into wool is carried out using sodium hydroxide and flocking additive to N-type silicon chip front；
Second step：Silicon chip after making herbs into wool in step S1 is diffused in boiler tube and is lightly doped to form n+ areas, doped source is trichlorine
Oxygen phosphorus；
3rd step：Silicon chip after diffusion n+ lightly doped districts in step S2 is passed through to etch and removes positive n+ areas and POCl3 diffusion
The phosphorosilicate glass of generation, and the lithographic method is HF acid selective wet chemical etchings；The remaining back side n+ types lightly doped district (3) of etching；
4th step：Silicon chip after being etched in step S3 is deposited into SiNx by pecvd process, is plated to the follow-up diffusing protection in the back side
Layer, and coating film thickness is 30-100nm；
5th step：Silicon chip after plated film in step S4 is diffused in diffusion furnace tube to be lightly doped to form P+ areas, doped source is
BBr3；
6th step：Silicon chip behind diffusion P+ areas in step S5 is cleaned in the mixed solution of hydrofluoric acid and nitric acid, removed
The follow-up diffusion barrier of front side of silicon wafer Pyrex and the back side；Positive pn-junction emitter stage (2) is formed after cleaning；
7th step：By silicon chip back side deposition of aluminium oxide+silicon nitride stack after being cleaned in step S6 into passivating back antireflection layer
(5), front cvd silicon oxide+silicon nitride penetrates layer (4) into front passivated reflection reducing；
8th step：Silicon chip electrode zone printing doping slurry after being passivated in step S7；Wherein pn-junction emitter stage (2) face is printed
Dry after boron slurry, then dried after n+ types lightly doped district (3) face printing phosphorus slurry, printing width is slightly wider than metallization grid line width；
And 100~200 DEG C of drying temperature, 1~5min of drying time；
9th step：Silicon chip after printing slurry in step S8 is subjected to ablation fluting in printed on both sides area, punches passivated reflection reducing layer,
P+ type emitter stage heavily doped region (4) is formed in front simultaneously, the back side forms n++ types heavily doped region (5)；
Tenth step：Silicon chip after ablation fluting in step S9 is printed into back of the body metal electrode using silver paste at silicon chip back side fluting
(9)；Positive gate line electrode (8) is printed at front side of silicon wafer fluting, grid line covers positive P+ type heavily doped region (4), and is sintered.
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