CN106409989A - N-type double-faced solar cell and preparation method thereof - Google Patents
N-type double-faced solar cell and preparation method thereof Download PDFInfo
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- CN106409989A CN106409989A CN201611168036.6A CN201611168036A CN106409989A CN 106409989 A CN106409989 A CN 106409989A CN 201611168036 A CN201611168036 A CN 201611168036A CN 106409989 A CN106409989 A CN 106409989A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 63
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 55
- 239000010703 silicon Substances 0.000 claims abstract description 55
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052796 boron Inorganic materials 0.000 claims abstract description 49
- 238000002161 passivation Methods 0.000 claims abstract description 48
- 238000005530 etching Methods 0.000 claims abstract description 32
- 238000009792 diffusion process Methods 0.000 claims abstract description 29
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 21
- 239000011574 phosphorus Substances 0.000 claims abstract description 21
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000007650 screen-printing Methods 0.000 claims abstract description 5
- 238000005245 sintering Methods 0.000 claims abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 99
- 235000008216 herbs Nutrition 0.000 claims description 12
- 210000002268 wool Anatomy 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 6
- 239000006117 anti-reflective coating Substances 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 3
- -1 and in boiler tube Chemical compound 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000005297 pyrex Substances 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 230000005662 electromechanics Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- General Physics & Mathematics (AREA)
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation method of an N-type double-faced solar cell. The electrode contact resistance is lowered, and the battery efficiency is improved. The invention further discloses the N-type double-faced solar cell. The N-type double-faced solar cell is low in electrode contact resistance and high in cell efficiency. The preparation method of the N-type double-faced solar cell comprises the steps that 1, texture surfaces are made; 2, boron diffusion is performed on the front face of a silicon wafer obtained after texture surface making is performed to form a boron diffusion layer, and phosphorus diffusion is performed on the back face to form a phosphorus diffusion layer; an aluminum oxide layer is deposited on the boron diffusion layer on the front face of the silicon wafer, a silicon nitride layer is deposited on the aluminum oxide layer to form a stacked aluminum oxide/silicon nitride passivation layer, and a silicon nitride passivation antireflection film is deposited on the phosphorus diffusion layer on the back face of the silicon wafer; 3, the aluminum oxide/silicon nitride passivation layer, corresponding to auxiliary grid line electrodes on the front face of the cell, on the front face of the silicon wafer is removed through etching to form etching grooves; 4, silk-screen printing and sintering are performed so as to prepare front face and back electrodes, and the auxiliary grid line electrodes on the front face cover the etching grooves.
Description
Technical field
The invention belongs to area of solar cell, particularly to a kind of N-type double-side solar cell and preparation method thereof.
Background technology
Enter 21st century, with the quickening of social modernization's process, the needs of the energy are consequently increased, the energy is endangered
Machine highlights increasingly.As one of important means alleviating energy problem, photovoltaic power generation technology is developed rapidly in recent years.Wherein
Traditional p-type monocrystalline and polycrystalline silicon solar cell development are particularly rapid, but its cost of electricity-generating is still higher, and serious limits it
Development further.And using N-type silicon as the new PERT solar cell of substrate rely on can generating electricity on two sides, no photo attenuation with
And assembly end suitable environment wider the advantages of, in recent years increasingly favored by people.Space flight electromechanics, Zhong Lai group, English in the industry
Li Deng Photovoltaics Com Inc. is all in the layout carrying out N-type double-side cell.But as N-type double-side cell technological difficulties back surface field prepare when
Diffusion couple front produces the problem compensating and the electrode contact problem of p-type surface passivation layer is never solved well
Certainly.The preparation carrying out in the industry back surface field typically by way of ion implanting is to avoid phosphorus to be diffused into front, but the one-tenth of ion implanting
This is too high, is passivated p-type surface using silicon oxide plus silicon nitride bilayer film, such electrode can burn passivation layer and crystal silicon surface
Form Ohmic contact, its shortcoming is that silicon oxide can be decayed through ultraviolet light post-passivation effect, and preparing of simultaneous oxidation silicon is general
Using thermal oxidation method, therefore preparation process can introduce thermal defect, affect battery efficiency.
The front of N-type cell is that the p-type surface after boron expands adopts conventional silicon nitride passivation effect undesirable, and adopts
SiO2/SiNxPassivating film, due to SiO2Higher with silicon face lattice match, can effectively reduce the surface defect density of states, can
Effectively passivation p-type crystal silicon surface, but silicon oxide typically need to be prepared at high temperature, long preparation period, can introduce certain heat and lack
Fall into, SiO simultaneously2Can be decayed by ultraviolet light passivation effect.
Al2O3Fixed negative charge rich in high concentration, form one layer of silicon oxide with crystal silicon interface after its annealing also has simultaneously
Certain chemical passivation effect, has good field effect passivation to p-type crystal silicon surface, but Al2O3/SiNxPassivating film
Shortcoming be that electrode slurry cannot burn thin film, it cannot form good Ohmic contact with crystal silicon surface, and electric current cannot be linear
Output.
The compound ratio in electrode contact position is more serious, the conversion efficiency of impact battery.
Content of the invention
Present invention aim to address above-mentioned the deficiencies in the prior art and problem are it is proposed that a kind of N-type is two-sided too
The preparation method in positive electricity pond, reduces Electrodes, improves the efficiency of battery；
The invention allows for a kind of N-type double-side solar cell, its Electrodes is relatively low, and battery efficiency is higher.
The technical solution used in the present invention is as follows：
A kind of preparation method of N-type double-side solar cell, including：
S1, making herbs into wool is carried out to n type single crystal silicon piece；
S2, respectively the front of silicon chip after making herbs into wool is carried out boron diffuse to form diffused layer of boron, the back side carry out phosphorus diffuse to form phosphorus diffusion
Layer；Aluminum oxide layer on the diffused layer of boron of front side of silicon wafer, on described alumina layer, deposited silicon nitride layer forms lamination
Aluminium oxide/silicon nitride passivation；In the phosphorus-diffused layer of silicon chip back side, deposited silicon nitride passivated reflection reducing penetrates film；
S3, by front side of silicon wafer corresponding to battery front side each pair gate line electrode at aluminium oxide/silicon nitride passivation pass through etching
Remove and form etching groove；
S4, silk screen printing sintering cover and are formed at each etching to prepare front and back electrode, the secondary gate line electrode in wherein front
At groove.
Preferably, in step S3, by each etching groove to diffused layer of boron selectivity heavily B doped.
Preferably, in step S3, by laser by corresponding to the aluminium oxide/silicon nitride at battery front side each pair gate line electrode
Passivation layer etching removes.
Preferably, step S2 further includes the following steps carrying out successively in order：
S21, the front spin coating boron slurry to silicon chip after making herbs into wool and carry out after annealing process using formed described spray diffusion layer as
Front side emitter pole；
S22, the back side to silicon chip after making herbs into wool carry out phosphorus and diffuse to form described phosphorus-diffused layer；
S23, on the diffused layer of boron of front side of silicon wafer aluminum oxide layer, on described alumina layer deposited silicon nitride layer formed folded
Aluminium oxide/the silicon nitride passivation of layer；In the phosphorus-diffused layer of silicon chip back side, deposited silicon nitride passivated reflection reducing penetrates film.
It is highly preferred that in step S21, annealing atmosphere is the mixed gas of oxygen and nitrogen, and in boiler tube, boron diffusion temperature is
800～1200 DEG C, diffusion time is 30～2h, and described front side emitter pole diffused sheet resistance is 40～80 Ω.
It is highly preferred that in step S22, in boiler tube, phosphorus diffusion temperature is 800～1000 DEG C, diffusion time is 30～2h, institute
After stating phosphorus diffusion, diffused sheet resistance is 20～80 Ω.
It is highly preferred that in step S23, by PECVD or ALD method on the diffused layer of boron of front side of silicon wafer deposition of aluminium oxide
Layer, subsequently forms aluminium oxide/silicon nitride passivation by PECVD method deposited silicon nitride layer on described alumina layer.
It is highly preferred that in step S23,
Described alumina layer thickness is 5～30nm；
And/or,
The thickness of described silicon nitride layer is 60～120nm；
And/or,
The thickness of described silicon nitride passivation antireflection film is 60～120nm.
It is highly preferred that step S2 also includes：
Before carrying out step S23, carry out carving side to the surrounding of silicon chip, and clean the Pyrex removing silicon chip surface and phosphorus silicon
Glass.
Preferably, in step S4, the secondary gate line electrode in front is filled and is covered each etching groove.
The another technical scheme that the present invention adopts is as follows：
A kind of N-type double-sided solar battery, including the silicon nitride layer being cascading, alumina layer, diffused layer of boron, N-type silicon
Substrate, phosphorus-diffused layer and silicon nitride passivation antireflective coating, described silicon nitride layer, alumina layer constitute the aluminium oxide/nitrogen of lamination
SiClx passivation layer, on described aluminium oxide/silicon nitride passivation, etching is formed with the etching groove for corresponding to each pair gate line electrode, secondary
Gate line electrode is filled in described etching groove to form Ohmic contact.
Preferably, the diffused layer of boron at described etching groove passes through select heavily B doped to form boron heavy doping portion.
The present invention adopts above scheme, has the advantage that compared to existing technology：
Passivation effect using the aluminium oxide/silicon nitride passivation of laminated construction is preferable, will not produce ultraviolet light post-passivation
The phenomenon of effect decay；Passivation layer below the pair gate line electrode of front is etched away and solves electrode contact with crystal silicon surface and ask
Topic, improves the efficiency of battery.
Brief description
Accompanying drawing 1 is a kind of flow chart of the preparation method of N-type double-side solar cell of the present invention；
Accompanying drawing 2 is a kind of structural representation of N-type double-side solar cell of the present invention.
In above-mentioned accompanying drawing,
1st, silicon nitride layer；2nd, alumina layer；3rd, diffused layer of boron；4th, N-type silicon base；5th, phosphorus-diffused layer；6th, silicon nitride passivation anti-reflection
Penetrate film；7th, main grid line electrode；8th, secondary gate line electrode；9th, boron heavy doping portion.
Specific embodiment
Below in conjunction with the accompanying drawings presently preferred embodiments of the present invention is described in detail, so that advantages and features of the invention energy
It is easier to be understood by the person skilled in the art.
Referring to the drawings shown in 1, a kind of preparation method of N-type double-side solar cell, include successively：
S1, silicon chip surface is carried out with pretreatment to remove the damage layer on N-type crystal silicon surface, making herbs into wool is carried out to n type single crystal silicon, obtains
There is the pyramid structure of sunken light effect；
S2, respectively the front of silicon chip after making herbs into wool is carried out boron diffuse to form diffused layer of boron, the back side carry out phosphorus diffuse to form phosphorus diffusion
Layer；Aluminum oxide layer on the diffused layer of boron of front side of silicon wafer, on described alumina layer, deposited silicon nitride layer forms lamination
Aluminium oxide/silicon nitride passivation；In the phosphorus-diffused layer of silicon chip back side, deposited silicon nitride passivated reflection reducing penetrates film；
S3, pass through laser（The similar lithographic method such as photoetching, wet etching, plasma etching）By front side of silicon wafer corresponding to battery
Aluminium oxide at each pair gate line electrode of front/silicon nitride passivation etching removes, and forms multiple etching grooves.Etching groove extends to boron
The upper surface of diffusion layer thus exposing the portion of upper surface of diffused layer of boron, and each etching groove location pass through silk screen printing boron starch,
The modes such as ion implanting to diffused layer of boron carry out boron selective heavily doped thus on the diffused layer of boron near etching groove formed boron weight
Doping；
S4, sinter in front aluminium oxide/silicon nitride passivation and silicon nitride passivation antireflective coating silk screen printing to prepare front and back
Electrode, wherein front select the half tone that secondary grid line is mated with laser ablation groove, and the secondary gate line electrode in front is filled and covered formation
At each etching groove.
Above-mentioned step S2 further includes：
S21, the front spin coating boron slurry to silicon chip after making herbs into wool and carry out after annealing process using formed described spray diffusion layer as
Front side emitter pole；Annealing atmosphere is the mixed gas of oxygen and nitrogen, and in boiler tube, boron diffusion temperature is 800～1200 DEG C, diffusion
Time is 30～2h, and described front side emitter pole diffused sheet resistance is 40～80 Ω；
S22, the back side to silicon chip after making herbs into wool carry out phosphorus and diffuse to form described phosphorus-diffused layer；In step S21, boron annealing forms densification
BSG（Pyrex）Mixed to front with stopping that phosphorus is counter, in boiler tube, phosphorus diffusion temperature is 800～1000 DEG C, diffusion time is 30
～2h, after described phosphorus diffusion, diffused sheet resistance is 20～80 Ω；
S24, plasma etching battery surrounding carry out to the surrounding of silicon chip carving side, prevent edge current leakage, and wet-cleaning removes borosilicate
Glass（BSG）, phosphorosilicate glass（PSG）；
S23, on the diffused layer of boron of front side of silicon wafer aluminum oxide layer, on described alumina layer deposited silicon nitride layer formed folded
Aluminium oxide/the silicon nitride passivation of layer；In the phosphorus-diffused layer of silicon chip back side, deposited silicon nitride passivated reflection reducing penetrates film.
The execution sequence of step S2 is S21, S22, S24, S23.
In step S23, PECVD is passed through in front（Plasma Enhanced Chemical Vapor Deposition）Deng
Plasma enhanced chemical vapor deposition or ALD（Atom layer deposition）The methods such as ald are in crystal silicon front surface
Aluminum oxide layer, subsequently on the basis of aluminium oxide PECVD deposited silicon nitride to form aluminium oxide/silicon nitride（Al2O3/SiNx）
Overlayer passivation layer, wherein alumina layer thickness are 5～30nm, and silicon nitride layer THICKNESS CONTROL is in 60～120nm；Backside deposition
Silicon nitride passivation antireflective coating, its thickness is 60～120nm.
Referring to the drawings shown in 2, the N-type double-side solar cell that prepared using above-mentioned preparation method, including stacking gradually
The silicon nitride layer 1 of setting, alumina layer 2, diffused layer of boron 3, N-type silicon base 4, phosphorus-diffused layer 5 and silicon nitride passivation antireflective
Film 6, described silicon nitride layer 1, alumina layer 2 constitute the aluminium oxide/silicon nitride passivation of lamination, and described aluminium oxide/silicon nitride is blunt
Change and the etching groove being formed with for corresponding to each pair gate line electrode 8 is etched on layer, the diffused layer of boron 3 at described etching groove passes through to select
Heavily B doped forms boron heavy doping portion 9, and secondary gate line electrode 8 is filled in described etching groove to form Ohmic contact.Front side of silicon wafer
Boron diffuses to form described diffused layer of boron 3, and silicon chip back side phosphorus diffuses to form described phosphorus-diffused layer 5, and is located at diffused layer of boron 3 He
Part between phosphorus-diffused layer 5 is then N-type silicon base 4.It is formed with also by printing on the aluminium oxide/silicon nitride passivation in front
Main grid line electrode 7, the silicon nitride passivation antireflective coating 6 at the back side is formed with main grid line electrode 7 also by printing.
Passivation effect using the aluminium oxide/silicon nitride passivation of laminated construction is preferable, after will not producing ultraviolet light
The phenomenon of passivation effect decay；Passivation layer below the pair gate line electrode of front is etched away and solves connecing of electrode and crystal silicon surface
Tactile problem, the boron at etching is heavily doped to reduce Electrodes, improves the efficiency of battery.
Above-described embodiment only technology design to illustrate the invention and feature, is a kind of preferred embodiment, its purpose exists
Will appreciate that present disclosure in person skilled in the art and implement according to this, the protection of the present invention can not be limited with this
Scope.Equivalent transformation or modification that all spirit according to the present invention are made, all should cover protection scope of the present invention it
Interior.
Claims (10)
1. a kind of preparation method of N-type double-side solar cell is it is characterised in that include：
S1, making herbs into wool is carried out to n type single crystal silicon piece；
S2, respectively the front of silicon chip after making herbs into wool is carried out boron diffuse to form diffused layer of boron, the back side carry out phosphorus diffuse to form phosphorus diffusion
Layer；Aluminum oxide layer on the diffused layer of boron of front side of silicon wafer, on described alumina layer, deposited silicon nitride layer forms lamination
Aluminium oxide/silicon nitride passivation；In the phosphorus-diffused layer of silicon chip back side, deposited silicon nitride passivated reflection reducing penetrates film；
S3, by front side of silicon wafer corresponding to battery front side each pair gate line electrode at aluminium oxide/silicon nitride passivation pass through etching
Remove and form etching groove；
S4, silk screen printing sintering cover and are formed at each etching to prepare front and back electrode, the secondary gate line electrode in wherein front
At groove.
2. the preparation method of N-type double-side solar cell according to claim 1 is it is characterised in that in step S3, also by
Each etching groove is to diffused layer of boron selectivity heavily B doped.
3. the preparation method of N-type double-side solar cell according to claim 1 is it is characterised in that in step S3, by swashing
Light will remove corresponding to the aluminium oxide/silicon nitride passivation etching at battery front side each pair gate line electrode.
4. the preparation method of N-type double-side solar cell according to claim 1 is it is characterised in that step S2 is wrapped further
Include the following steps carrying out successively in order：
S21, the front spin coating boron slurry to silicon chip after making herbs into wool and carry out after annealing process using formed described spray diffusion layer as
Front side emitter pole；
S22, the back side to silicon chip after making herbs into wool carry out phosphorus and diffuse to form described phosphorus-diffused layer；
S23, on the diffused layer of boron of front side of silicon wafer aluminum oxide layer, on described alumina layer deposited silicon nitride layer formed folded
Aluminium oxide/the silicon nitride passivation of layer；In the phosphorus-diffused layer of silicon chip back side, deposited silicon nitride passivated reflection reducing penetrates film.
5. the preparation method of N-type double-side solar cell according to claim 3 is it is characterised in that in step S21, anneal
Atmosphere is the mixed gas of oxygen and nitrogen, and in boiler tube, boron diffusion temperature is 800～1200 DEG C, and diffusion time is 30～2h, institute
Stating front side emitter pole diffused sheet resistance is 40～80 Ω；
And/or；
In step S22, in boiler tube, phosphorus diffusion temperature is 800～1000 DEG C, and diffusion time is 30～2h, spreads after described phosphorus diffusion
Sheet resistance is 20～80 Ω.
6. the preparation method of N-type double-side solar cell according to claim 3 is it is characterised in that in step S23, pass through
PECVD or ALD method aluminum oxide layer on the diffused layer of boron of front side of silicon wafer, subsequently passes through on described alumina layer
PECVD method deposited silicon nitride layer forms aluminium oxide/silicon nitride passivation.
7. the preparation method of N-type double-side solar cell according to claim 3 is it is characterised in that in step S23,
Described alumina layer thickness is 5～30nm；
And/or,
The thickness of described silicon nitride layer is 60～120nm；
And/or,
The thickness of described silicon nitride passivation antireflection film is 60～120nm.
8. the preparation method of N-type double-side solar cell according to claim 3 is it is characterised in that step S2 also includes：
Before carrying out step S23, carry out carving side to the surrounding of silicon chip, and clean the Pyrex removing silicon chip surface and phosphorus silicon
Glass.
9. a kind of N-type double-sided solar battery, including the silicon nitride layer being cascading, alumina layer, diffused layer of boron, N-type
Silicon base, phosphorus-diffused layer and silicon nitride passivation antireflective coating, described silicon nitride layer, alumina layer constitute lamination aluminium oxide/
Silicon nitride passivation is formed with for corresponding to each pair grid line electricity it is characterised in that etching on described aluminium oxide/silicon nitride passivation
The etching groove of pole, secondary gate line electrode is filled in described etching groove to form Ohmic contact.
10. N-type double-sided solar battery according to claim 9 is it is characterised in that diffused layer of boron at described etching groove
The upper selection heavily B doped that passes through forms boron heavy doping portion.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107507872A (en) * | 2017-08-14 | 2017-12-22 | 江苏科来材料科技有限公司 | A kind of high performance solar batteries of two-sided doping and preparation method thereof |
| CN110246905A (en) * | 2019-05-31 | 2019-09-17 | 苏州腾晖光伏技术有限公司 | A kind of silicon solar cell and preparation method thereof |
| CN110854238A (en) * | 2019-11-26 | 2020-02-28 | 常州时创能源科技有限公司 | Preparation method of monocrystalline silicon small cell |
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| CN112825340A (en) * | 2019-11-15 | 2021-05-21 | 苏州阿特斯阳光电力科技有限公司 | Passivated contact battery and preparation method and application thereof |
| CN113725319A (en) * | 2021-08-27 | 2021-11-30 | 常州时创能源股份有限公司 | N-type solar cell and manufacturing method thereof |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101764179A (en) * | 2009-12-31 | 2010-06-30 | 中山大学 | Manufacture method of selective front surface field N-type solar cell |
| CN101777592A (en) * | 2010-01-19 | 2010-07-14 | 浙江大学 | Heavily-doped UMG silicon epitaxially generated high-low junction-based solar cell and preparation method |
| CN102044574A (en) * | 2010-11-30 | 2011-05-04 | 奥特斯维能源（太仓）有限公司 | N-type single crystal silicon substrate PN junction inversion layer battery and manufacturing method thereof |
| CN102169923A (en) * | 2011-03-05 | 2011-08-31 | 常州天合光能有限公司 | Method for passivating P-type doping layer of N-type silicon solar cell and cell structure |
| CN104538501A (en) * | 2015-01-15 | 2015-04-22 | 中利腾晖光伏科技有限公司 | N-type double-sided battery and manufacturing method thereof |
| CN105118898A (en) * | 2015-09-23 | 2015-12-02 | 中利腾晖光伏科技有限公司 | Silicon chip surface passivation method and manufacturing method of N type double-face cell based thereon |
| CN105489671A (en) * | 2015-12-28 | 2016-04-13 | 苏州中来光伏新材股份有限公司 | N-type double-sided solar cell and preparation method thereof |
| CN105609594A (en) * | 2016-03-22 | 2016-05-25 | 中利腾晖光伏科技有限公司 | Preparation method of N-type double-sided solar cell |
-
2016
- 2016-12-16 CN CN201611168036.6A patent/CN106409989A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101764179A (en) * | 2009-12-31 | 2010-06-30 | 中山大学 | Manufacture method of selective front surface field N-type solar cell |
| CN101777592A (en) * | 2010-01-19 | 2010-07-14 | 浙江大学 | Heavily-doped UMG silicon epitaxially generated high-low junction-based solar cell and preparation method |
| CN102044574A (en) * | 2010-11-30 | 2011-05-04 | 奥特斯维能源（太仓）有限公司 | N-type single crystal silicon substrate PN junction inversion layer battery and manufacturing method thereof |
| CN102169923A (en) * | 2011-03-05 | 2011-08-31 | 常州天合光能有限公司 | Method for passivating P-type doping layer of N-type silicon solar cell and cell structure |
| CN104538501A (en) * | 2015-01-15 | 2015-04-22 | 中利腾晖光伏科技有限公司 | N-type double-sided battery and manufacturing method thereof |
| CN105118898A (en) * | 2015-09-23 | 2015-12-02 | 中利腾晖光伏科技有限公司 | Silicon chip surface passivation method and manufacturing method of N type double-face cell based thereon |
| CN105489671A (en) * | 2015-12-28 | 2016-04-13 | 苏州中来光伏新材股份有限公司 | N-type double-sided solar cell and preparation method thereof |
| CN105609594A (en) * | 2016-03-22 | 2016-05-25 | 中利腾晖光伏科技有限公司 | Preparation method of N-type double-sided solar cell |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107507872A (en) * | 2017-08-14 | 2017-12-22 | 江苏科来材料科技有限公司 | A kind of high performance solar batteries of two-sided doping and preparation method thereof |
| CN110246905A (en) * | 2019-05-31 | 2019-09-17 | 苏州腾晖光伏技术有限公司 | A kind of silicon solar cell and preparation method thereof |
| CN110246905B (en) * | 2019-05-31 | 2024-05-07 | 苏州腾晖光伏技术有限公司 | Silicon solar cell and preparation method thereof |
| CN112825340A (en) * | 2019-11-15 | 2021-05-21 | 苏州阿特斯阳光电力科技有限公司 | Passivated contact battery and preparation method and application thereof |
| CN112825340B (en) * | 2019-11-15 | 2022-08-19 | 苏州阿特斯阳光电力科技有限公司 | Passivated contact battery and preparation method and application thereof |
| CN110854238A (en) * | 2019-11-26 | 2020-02-28 | 常州时创能源科技有限公司 | Preparation method of monocrystalline silicon small cell |
| CN110854238B (en) * | 2019-11-26 | 2022-04-26 | 常州时创能源股份有限公司 | Preparation method of monocrystalline silicon small cell |
| CN111564530A (en) * | 2020-06-09 | 2020-08-21 | 山西潞安太阳能科技有限责任公司 | Novel crystalline silicon PERC battery front oxide layer preparation process |
| CN111564530B (en) * | 2020-06-09 | 2022-07-29 | 山西潞安太阳能科技有限责任公司 | Novel crystalline silicon PERC battery front oxide layer preparation process |
| CN113725319A (en) * | 2021-08-27 | 2021-11-30 | 常州时创能源股份有限公司 | N-type solar cell and manufacturing method thereof |
| CN113964240A (en) * | 2021-10-19 | 2022-01-21 | 通威太阳能(眉山)有限公司 | Preparation method of N-type double-sided solar cell |
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