CN110246905B - Silicon solar cell and preparation method thereof - Google Patents
Silicon solar cell and preparation method thereof Download PDFInfo
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- CN110246905B CN110246905B CN201910474255.4A CN201910474255A CN110246905B CN 110246905 B CN110246905 B CN 110246905B CN 201910474255 A CN201910474255 A CN 201910474255A CN 110246905 B CN110246905 B CN 110246905B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 54
- 239000010703 silicon Substances 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 57
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 53
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 53
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000002310 reflectometry Methods 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims description 15
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 9
- 238000006388 chemical passivation reaction Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 25
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a silicon solar cell and a preparation method thereof, and relates to the technical field of solar cells. The solar cell comprises the following components in sequence from bottom to top: the semiconductor device comprises a back electrode, a first silicon nitride layer, an aluminum oxide layer, a first silicon oxide layer, a silicon substrate, an emitter layer, a second silicon oxide layer, a second silicon nitride layer, a third silicon oxide layer and a front electrode. The silicon oxide layer is further added on the silicon nitride layer on the front side of the battery, the reflectivity of the front side film layer can be reduced, the light utilization rate is improved, the effect of negative fixed charges of aluminum oxide is enhanced by adding the silicon oxide layer between the aluminum oxide layer on the back side and the silicon substrate, and the field passivation and chemical passivation effects of aluminum oxide are enhanced, so that the battery efficiency is improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a silicon solar cell and a preparation method thereof.
Background
In recent years, with the progress of solar cell technology and the high demands of development, low cost and high conversion efficiency have become the necessary trend of solar cells. The passivated emitter back contact (PERC) cell adds back passivation aluminum oxide and silicon nitride and laser drilling processes in the conventional single crystal cell fabrication process to achieve improved cell efficiency. PERC batteries are widely popularized due to high conversion efficiency.
At present, the conventional PERC back passivation film layer structure is 3-20 nm of aluminum oxide and 100-130 nm of silicon nitride, the front surface adopts multilayer silicon nitride to carry out passivation anti-reflection film design, and the front surface reflectivity is generally 3-5%.
However, the higher interface state density exists between the back surface of the silicon wafer and the alumina, so that the passivation effect of the passivation film layer is weakened to a certain extent, and in addition, the reflectivity is difficult to be further reduced due to the design of the multilayer silicon nitride anti-reflection film on the front surface, so that the efficiency of the battery is difficult to be further improved.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a silicon solar cell and a preparation method thereof so as to solve the problem that the efficiency of the cell is difficult to further improve.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
In a first aspect, the present invention provides a silicon solar cell comprising, in order from bottom to top: the semiconductor device comprises a back electrode, a first silicon nitride layer, an aluminum oxide layer, a first silicon oxide layer, a silicon substrate, an emitter layer, a second silicon oxide layer, a second silicon nitride layer, a third silicon oxide layer and a front electrode.
Optionally, a fourth silicon oxide layer is further disposed between the back electrode and the first silicon nitride layer.
Alternatively, the thickness of the second silicon oxide layer is in the range of 1nm to 5nm, the thickness of the second silicon nitride layer is in the range of 40nm to 70nm, and the refractive index of the second silicon nitride layer is in the range of 2.08 to 2.15.
Optionally, the thickness of the third silicon oxide layer is in the range of 10nm to 30 nm.
Alternatively, the first silicon oxide layer has a thickness in the range of 1nm to 5nm, the aluminum oxide layer has a thickness in the range of 4nm to 20nm, the first silicon nitride layer has a thickness in the range of 60nm to 90nm, and the first silicon nitride layer has a refractive index in the range of 2.08 to 2.2.
Optionally, the thickness of the fourth silicon oxide layer is in the range of 10nm to 30 nm.
Optionally, the silicon substrate is a P-type monocrystalline silicon substrate.
In a second aspect, the present invention provides a method for manufacturing a silicon solar cell, the method comprising:
a) Providing a P-type monocrystalline silicon piece, and performing double-sided texturing, wherein the size of the textured surface is in the range of 1-3 mu m;
b) Single-sided diffusion is carried out on the front surface of the textured silicon wafer, and the diffusion sheet resistance is in the range of 70 ohms to 100 ohms;
c) Polishing the back surface of the silicon wafer after single-sided diffusion to ensure that the reflectivity of the back surface is more than 35%;
d) Performing single-sided thermal oxidation on the silicon wafer with the polished back, and forming a first silicon oxide layer on the front side of the silicon wafer, wherein the thickness of the first silicon oxide layer is in the range of 1nm to 5 nm;
e) Sequentially and continuously depositing a second silicon dioxide layer, an aluminum oxide layer, a first silicon nitride layer and a third silicon oxide layer on the back of the silicon wafer subjected to single-sided thermal oxidation, wherein the thickness of the second silicon dioxide layer is in the range of 1nm to 5nm, the thickness of the aluminum oxide layer is in the range of 4nm to 20nm, the thickness of the first silicon nitride layer is in the range of 60nm to 90nm, the refractive index of the first silicon nitride layer is in the range of 2.08 to 2.2, and the thickness of the third silicon oxide layer is in the range of 10nm to 30 nm;
f) Sequentially depositing a second silicon nitride layer and a fourth silicon oxide layer on the front surface of the silicon wafer after the back surface deposition, wherein the thickness of the second silicon nitride layer is in the range of 40nm to 70nm, the refractive index of the second silicon nitride layer is in the range of 2.08 to 2.15, and the thickness of the fourth silicon oxide layer is in the range of 10nm to 30 nm;
g) Laser grooving is carried out on the back of the silicon wafer after front deposition so as to expose the area of the surface of the silicon wafer for forming electrode contact;
h) And performing screen printing and sintering on the silicon wafer subjected to laser grooving to form the electrode.
Optionally, the thermal oxidation performed in step d) is performed at a temperature in the range of 600 ℃ to 750 ℃ and with an oxygen flow in the range of 1SLM to 5SLM for a time in the range of 10 minutes to 30 minutes.
Alternatively, the deposition in step e) and step f) is performed using a plasma enhanced chemical vapor deposition method.
The beneficial effects of the invention include:
The solar cell provided by the invention sequentially comprises the following components from bottom to top: the semiconductor device comprises a back electrode, a first silicon nitride layer, an aluminum oxide layer, a first silicon oxide layer, a silicon substrate, an emitter layer, a second silicon oxide layer, a second silicon nitride layer, a third silicon oxide layer and a front electrode. The silicon oxide layer is further added on the silicon nitride layer on the front side of the battery, the reflectivity of the front side film layer can be reduced, the light utilization rate is improved, the effect of negative fixed charges of aluminum oxide is enhanced by adding the silicon oxide layer between the aluminum oxide layer on the back side and the silicon substrate, and the field passivation and chemical passivation effects of aluminum oxide are enhanced, so that the battery efficiency is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 shows a schematic structure of a conventional PERC solar cell;
fig. 2 is a schematic structural diagram of a solar cell according to an embodiment of the present invention;
Fig. 3 is a schematic structural diagram of a solar cell according to another embodiment of the present invention;
Fig. 4 shows a schematic flow chart of a method for manufacturing a solar cell according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Fig. 1 shows a schematic structural diagram of a conventional PERC solar cell, which, as shown in fig. 1, sequentially includes, from bottom to top: a back electrode 101, a first silicon nitride layer 102, an aluminum oxide layer 103, a silicon substrate 104, an emitter layer 105, a silicon oxide layer 106, a second silicon nitride layer 107, and a front electrode 108. In this structure, a higher interface state density exists between the back surface of the silicon substrate 104 and the alumina layer 103, so that the passivation effect of the passivation film layer is weakened to a certain extent, and the antireflection effect of the front silicon oxide layer 106 and the second silicon nitride layer 107 is limited. These all restrict the improvement of the solar cell efficiency.
In order to further improve the efficiency of the solar cell, the embodiment of the invention provides a novel solar cell structure, as shown in fig. 2, the cell sequentially comprises, from bottom to top: a back electrode 201, a first silicon nitride layer 202, an aluminum oxide layer 203, a first silicon oxide layer 204, a silicon substrate 205, an emitter layer 206, a second silicon oxide layer 207, a second silicon nitride layer 208, a third silicon oxide layer 209, and a front electrode 210.
Compared with the conventional technology shown in fig. 1, the reflectivity of the front surface film layer can be reduced by further adding the silicon oxide layer on the silicon nitride layer on the front surface of the battery, the light utilization rate is improved, the effect of negative fixed charges of aluminum oxide is enhanced by adding the silicon oxide layer between the back surface aluminum oxide layer and the silicon substrate, and the field passivation and chemical passivation effects of aluminum oxide are enhanced, so that the battery efficiency is improved. Compared with the solar cell with the conventional structure, the open-circuit voltage of the solar cell provided by the embodiment of the invention is increased by more than 2mV, and the weighted average reflectivity of the anti-reflection film layer can reach 0.5% -2%.
In addition, the preparation of the battery structure is compatible with the existing preparation process, and no additional manufacturing equipment is required.
Optionally, as shown in fig. 3, a fourth silicon oxide layer 211 may be further provided between the back electrode 201 and the first silicon nitride layer 202. And a silicon oxide layer is introduced into the outer layer of the back surface, so that a high-low refractive index film layer can be formed on the back surface of the battery, and the spectral response of the battery to a long wave band is improved.
Alternatively, the thickness of the second silicon oxide layer 207 is in the range of 1nm to 5nm, the thickness of the second silicon nitride layer 208 is in the range of 40nm to 70nm, and the refractive index of the second silicon nitride layer 208 is in the range of 2.08 to 2.15.
Optionally, the thickness of the third silicon oxide layer 209 is in the range of 10nm to 30 nm.
Alternatively, the thickness of the first silicon oxide layer 204 is in the range of 1nm to 5nm, the thickness of the aluminum oxide layer 203 is in the range of 4nm to 20nm, the thickness of the first silicon nitride layer 202 is in the range of 60nm to 90nm, and the refractive index of the first silicon nitride layer 202 is in the range of 2.08 to 2.2.
Alternatively, the thickness of the fourth silicon oxide layer 211 is in the range of 10nm to 30 nm.
Alternatively, the silicon substrate 205 may be a P-type monocrystalline silicon substrate.
The embodiment of the invention also provides a preparation method of the solar cell, and the method can be used for preparing the solar cell provided in the embodiment of the invention. The preparation method is described in detail below with reference to fig. 4. The method comprises the following steps:
a) Providing a P-type monocrystalline silicon piece, and performing double-sided texturing, wherein the size of the textured surface is in the range of 1-3 mu m;
b) Single-sided diffusion is carried out on the front surface of the textured silicon wafer, and the diffusion sheet resistance is in the range of 70 ohms to 100 ohms;
c) Polishing the back surface of the silicon wafer after single-sided diffusion to ensure that the reflectivity of the back surface is more than 35%;
d) Performing single-sided thermal oxidation on the silicon wafer with the polished back, and forming a first silicon oxide layer on the front side of the silicon wafer, wherein the thickness of the first silicon oxide layer is in the range of 1nm to 5 nm; in this step, when the silicon wafers are put into the wafer grooves for thermal oxidation, two silicon wafers may be put back to back in one wafer groove so that the front faces of both silicon wafers are exposed for simultaneous thermal oxidation. Compared with the double-sided thermal oxidation of the silicon wafer, the single-sided thermal oxidation adopted in the step improves the yield by one time;
e) Sequentially and continuously depositing a second silicon dioxide layer, an aluminum oxide layer, a first silicon nitride layer and a third silicon oxide layer on the back of the silicon wafer subjected to single-sided thermal oxidation, wherein the thickness of the second silicon dioxide layer is in the range of 1nm to 5nm, the thickness of the aluminum oxide layer is in the range of 4nm to 20nm, the thickness of the first silicon nitride layer is in the range of 60nm to 90nm, the refractive index of the first silicon nitride layer is in the range of 2.08 to 2.2, and the thickness of the third silicon oxide layer is in the range of 10nm to 30 nm;
f) Sequentially depositing a second silicon nitride layer and a fourth silicon oxide layer on the front surface of the silicon wafer after the back surface deposition, wherein the thickness of the second silicon nitride layer is in the range of 40nm to 70nm, the refractive index of the second silicon nitride layer is in the range of 2.08 to 2.15, and the thickness of the fourth silicon oxide layer is in the range of 10nm to 30 nm;
g) Laser grooving is carried out on the back of the silicon wafer after front deposition so as to expose the area of the surface of the silicon wafer for forming electrode contact;
h) And performing screen printing and sintering on the silicon wafer subjected to laser grooving to form the electrode.
Optionally, the thermal oxidation performed in step d) is performed at a temperature in the range of 600 ℃ to 750 ℃ and with an oxygen flow in the range of 1SLM to 5SLM for a time in the range of 10 minutes to 30 minutes.
Alternatively, the deposition in step e) and step f) is performed using Plasma Enhanced Chemical Vapor Deposition (PECVD).
The above embodiments are only for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the content of the present invention and implement the same, but not limit the scope of the present invention, and all equivalent changes or modifications made according to the spirit of the present invention should be included in the scope of the present invention.
Claims (2)
1. A silicon solar cell, comprising, in order from bottom to top: a back electrode, a first silicon nitride layer, an aluminum oxide layer, a first silicon oxide layer, a silicon substrate, an emitter layer, a second silicon oxide layer, a second silicon nitride layer, a third silicon oxide layer, and a front electrode;
A fourth silicon oxide layer is arranged between the back electrode and the first silicon nitride layer;
The first silicon oxide layer has a thickness in the range of 1 nm to 5 nm, the aluminum oxide layer has a thickness in the range of 4nm to 20 nm, the first silicon nitride layer has a thickness in the range of 60 nm to 90 nm, and the first silicon nitride layer has a refractive index in the range of 2.08 to 2.2;
the fourth silicon oxide layer has a thickness in the range of 10nm to 30 nm;
The thickness of the second silicon oxide layer is in the range of 1 nm to 5 nm, the thickness of the second silicon nitride layer is in the range of 40 nm to 70 nm, and the refractive index of the second silicon nitride layer is in the range of 2.08 to 2.15;
the thickness of the third silicon oxide layer is in the range of 10nm to 30 nm;
the silicon substrate is a P-type monocrystalline silicon substrate.
2. A method of manufacturing a silicon solar cell, comprising:
a) Providing a P-type monocrystalline silicon piece, and performing double-sided texturing, wherein the size of the textured surface is in the range of 1-3 mu m;
b) Single-sided diffusion is carried out on the front surface of the textured silicon wafer, and the diffusion sheet resistance is in the range of 70 ohms to 100 ohms;
c) Polishing the back surface of the silicon wafer after single-sided diffusion to ensure that the reflectivity of the back surface is more than 35%;
d) Performing single-sided thermal oxidation on the silicon wafer with the polished back, and forming a first silicon oxide layer on the front side of the silicon wafer, wherein the thickness of the first silicon oxide layer is in the range of 1 nm-5 nm;
e) Sequentially and continuously depositing a second silicon dioxide layer, an aluminum oxide layer, a first silicon nitride layer and a third silicon oxide layer on the back surface of the silicon wafer after single-sided thermal oxidation, wherein the thickness of the second silicon dioxide layer is in the range of 1nm to 5 nm, the thickness of the aluminum oxide layer is in the range of 4 nm to 20 nm, the thickness of the first silicon nitride layer is in the range of 60 nm to 90 nm, the refractive index of the first silicon nitride layer is in the range of 2.08 to 2.2, and the thickness of the third silicon oxide layer is in the range of 10nm to 30 nm;
f) Sequentially depositing a second silicon nitride layer and a fourth silicon oxide layer on the front surface of the silicon wafer after back surface deposition, wherein the thickness of the second silicon nitride layer is in the range of 40 nm to 70 nm, the refractive index of the second silicon nitride layer is in the range of 2.08 to 2.15, and the thickness of the fourth silicon oxide layer is in the range of 10 nm to 30 nm;
g) Laser grooving is carried out on the back of the silicon wafer after front deposition so as to expose the area of the surface of the silicon wafer for forming electrode contact;
h) Screen printing and sintering the silicon wafer subjected to laser grooving to form an electrode;
the thermal oxidation carried out in step d) is carried out at a temperature in the range 600 ℃ to 750 ℃ and with an oxygen flow in the range 1 SLM to 5 SLM, and for a time in the range 10 minutes to 30 minutes;
the deposition in step e) and step f) is performed by plasma enhanced chemical vapor deposition.
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| CN115172522B (en) * | 2022-07-12 | 2023-07-21 | 浙江晶科能源有限公司 | Solar cell, preparation method and photovoltaic module |
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