CN110047950A - A kind of solar cell and preparation method thereof with passivation layer structure - Google Patents
A kind of solar cell and preparation method thereof with passivation layer structure Download PDFInfo
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- CN110047950A CN110047950A CN201910428505.0A CN201910428505A CN110047950A CN 110047950 A CN110047950 A CN 110047950A CN 201910428505 A CN201910428505 A CN 201910428505A CN 110047950 A CN110047950 A CN 110047950A
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- 238000002161 passivation Methods 0.000 title claims abstract description 99
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 49
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 19
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 210000002268 wool Anatomy 0.000 claims abstract description 7
- 235000008216 herbs Nutrition 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 132
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 235000013842 nitrous oxide Nutrition 0.000 claims description 3
- 238000006385 ozonation reaction Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of solar cell with passivation layer structure, positive outer passivation protection layer is set as silicon nitride film layer, and the outer passivation protection layer at the back side is set as silicon oxynitride film or titanium oxide film layer.The invention also discloses a kind of preparation methods of solar cell with passivation layer structure, comprising the following steps: step S01, making herbs into wool；Step S02, it spreads；Step S03, it etches；Step S04, passivation layer in growth；Step S05, passivation layer in growth；Step S06, outer passivation protection layer is grown, the positive outer passivation protection layer is set as silicon nitride film layer, and the outer passivation protection layer at the back side is set as silicon oxynitride film or titanium oxide film layer；Step S07, laser slotting；Step S08, silk-screen printing；Step S09, LID；Step S10, sorted and packaged.The different outer passivation protection layer in front and back of the present invention can preferably enhance the anti-PID performance of cell piece, and can significantly more efficient promotion cell photoelectric transfer efficiency.
Description
Technical field
The present invention relates to photovoltaic cell technical field, specially a kind of solar cell and its preparation with passivation layer structure
Method.
Background technique
In the prior art, there is surface-passivating dielectric double layer too for manufacturing application No. is " 200880124779.0 "
The method of positive energy battery and corresponding solar battery and remaining solar battery generally used.
The solar cell being commonly used is in use: never have silicon substrate front and back and meanwhile growth it is heavy
The structure of product silica coating, so that the anti-PID ability in the PERC double-side cell back side produced is poor, also, has no precedent
Growth deposits the passivation protection layer of two kinds of unlike materials respectively in the aluminum oxide film layer of silicon substrate front and back, causes
Existing passivation protection effect is excessively poor, and battery efficiency is low, and urgent need will improve.
Summary of the invention
The purpose of the present invention is to provide a kind of solar cell and preparation method thereof with passivation layer structure, on solving
State the problem of proposing in background technique.
To achieve the above object, the invention provides the following technical scheme:
A kind of solar cell with passivation layer structure, including silicon substrate, the silicon substrate front and back successively sink
Product has interior passivation layer, middle passivation layer and outer passivation protection layer, and positive outer passivation protection layer is set as silicon nitride film layer, the back side
Outer passivation protection layer is set as silicon oxynitride film or titanium oxide film layer；
Al-BSF, the aluminium back are printed on the silicon oxynitride film at the silicon substrate back side or titanium oxide film layer
Field forms Ohmic contact with silicon substrate by laser grooving and connect, and the Al-BSF back side is provided with back electrode；
Positive electrode is provided on the positive silicon nitride film layer of the silicon substrate, the positive electrode is connect with silicon substrate.
A kind of preparation method of the solar cell with passivation layer structure, comprising the following steps:
Step S01, suede structure making herbs into wool: is obtained by surface wool manufacturing using monocrystalline silicon piece；
Step S02, it spreads: being passed through phosphorus oxychloride and silicon wafer is reacted, realize diffusion；
Step S03, it etches: edge PN junction being etched using plasma etching and is removed, and carries out anneal oxidation；
Step S04, passivation layer in growth: passivation layer in one layer of deposition, the interior passivation are grown in silicon substrate front and back
Layer is using thermal oxidation method or laughing gas oxidation or ozonisation or nitric acid solution chemical method deposition, and interior passivation layer is set as silica
Film layer；
Step S05, passivation layer in growth: on the interior passivation layer of front and back growth deposition one layer in passivation layer, it is described in
Passivation layer is deposited using PECVD or ALD or solid target through PVD method, and middle passivation layer be set as aluminum oxide film layer or
Film layer containing aluminum oxide；
Step S06, outer passivation protection layer is grown: one layer of the growth deposition passivation outside respectively on the middle passivation layer of front and back
Protective layer, the outer passivation protection layer are deposited using PVD, CVD or ALD method；
Step S07, laser slotting: to the silicon chip back side laser slotting after plated film；
Step S08, silk-screen printing: completing the back side and positive printing by silk-screen printing, formed Al-BSF, back electrode and
Then positive electrode 0 is sintered；
Step S09, LID: pass through light decay furnace or electrical pumping furnace；
Step S10, battery testing stepping finally sorted and packaged: is carried out to cell piece；
The positive outer passivation protection layer is set as silicon nitride film layer, and the outer passivation protection layer at the back side is set as nitrogen
Membranous layer of silicon oxide or titanium oxide film layer.
Preferably, in step S02, after diffusion, selective doping is carried out by laser.
Preferably, it in step S03, can also be performed etching using wet process.
Compared with prior art, the beneficial effects of the present invention are:
The present invention is respectively grown by the front, rear surface in silicon substrate deposited passivation layer in layer of silicon dioxide, have
High damage threshold and excellent optical property, are combined with the passivation layer in aluminum oxide, enhance the passivation at the positive back side well
Effect, and the deposited silicon nitride film layer on positive middle passivation layer, depositing silicon oxynitride silicon film on middle passivation layer overleaf
Or titanium oxide film layer, silicon nitride film layer have good passivation effect to silicon wafer, silicon oxynitride film has silicon nitride and oxygen
The good characteristic of SiClx, titanium oxide film layer have the most of chemical substances in cell piece production process chemical steady well
Qualitative, refractive index height and absorptivity are low, and the outer passivation protection layer that front and back is different, can preferably enhance battery
The anti-PID performance of piece, and can significantly more efficient promotion cell photoelectric transfer efficiency.
Detailed description of the invention
Fig. 1 is the battery structure schematic diagram that outer passivation protection layer of the invention is set as silicon oxynitride film；
Fig. 2 is the battery structure schematic diagram that outer passivation protection layer of the invention is set as titanium oxide film layer；
Fig. 3 is preparation method flow diagram of the invention；
Fig. 4 is a preferred preparation method flow diagram of the invention.
In figure: 1 silicon substrate, passivation layer in 2, passivation layer, 4 outer passivation protection layers, 41 silicon nitride film layers, 42 nitrogen oxidations in 3
Silicon film, 43 titanium oxide film layers, 5 Al-BSFs, 6 back electrodes, 7 positive electrodes.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Fig. 1 to 4 is please referred to, the present invention provides a kind of technical solution:
A kind of preparation method of the solar cell with passivation layer structure, comprising the following steps:
Step S01, suede structure making herbs into wool: is obtained by surface wool manufacturing using monocrystalline silicon piece；
Step S02, it spreads: being passed through phosphorus oxychloride and silicon wafer is reacted, realize diffusion, preferably as one,
After diffusion, selective doping is carried out by laser；
Step S03, it etches: edge PN junction being etched using plasma etching and is removed, and carries out anneal oxidation, anneal oxidation
Silica coating can be preferably prepared, preferably as one, plasma etching can be replaced using wet etching；
Step S04, passivation layer 2 in growth: passivation layer 2 in one layer of deposition, interior passivation are grown in 1 front and back of silicon substrate
Layer 2 is using thermal oxidation method or laughing gas oxidation or ozonisation or nitric acid solution chemical method deposition, and interior passivation layer 2 is set as titanium dioxide
Silicon film, interior passivation layer 2 can be passivated the dangling bonds of surface of crystalline silicon；
Step S05, passivation layer 3 in growth: the passivation layer 3 in one layer of growth deposition on the interior passivation layer 2 of front and back, in
Passivation layer 3 is deposited using PECVD or ALD or solid target through PVD method, and middle passivation layer 3 is set as aluminum oxide film layer
Or the film layer containing aluminum oxide, middle passivation layer 3 can prevent the mobile ion in passivation layer from making in external electric field and temperature
Movement under；
Step S06, it grows outer passivation protection layer 4: being grown respectively on the middle passivation layer 3 of front and back blunt outside one layer of deposition
Change protective layer 4, outer passivation protection layer 4 can be used as capping layer and optics antireflective functional layer, outer passivation protection layer 4 using PVD,
CVD ALD method deposition, positive outer passivation protection layer 4 are set as silicon nitride film layer 41, and silicon nitride film layer 41 can be to silicon
Piece front has good passivation effect, and the outer passivation protection layer 4 at the back side is set as silicon oxynitride film 42 or titanium dioxide film
Layer 43, silicon oxynitride film 42 have the good characteristic of good silicon nitride and silica, match with front side silicon nitride film layer 41
It closes, preferably enhances photoelectric conversion efficiency, its refractive index height of titanium oxide film layer 43 and absorptivity are low, can also preferably and just
Face silicon nitride film layer 41 is cooperated, and the anti-PID performance of cell piece is enhanced；
Step S07, laser slotting: to the silicon chip back side laser slotting after plated film；
Step S08, silk-screen printing: the back side and positive printing are completed by silk-screen printing, form Al-BSF 5, back electrode 6
With positive electrode 7, then it is sintered；
Step S09, LID: pass through light decay furnace or electrical pumping furnace；
Step S10, battery testing stepping finally sorted and packaged: is carried out to cell piece.
A kind of solar cell with passivation layer structure, including silicon substrate 1,1 front and back of silicon substrate are sequentially depositing
There are interior passivation layer 2, middle passivation layer 3 and outer passivation protection layer 4, positive outer passivation protection layer 4 is set as silicon nitride film layer 41, back
The outer passivation protection layer 4 in face is set as silicon oxynitride film 42 or titanium oxide film layer 43；
Al-BSF 5, Al-BSF are printed on the silicon oxynitride film 42 at 1 back side of silicon substrate or titanium oxide film layer 43
5, which form Ohmic contact with silicon substrate 1 by laser grooving, connect, and 5 back side of Al-BSF is provided with back electrode 6；
It is provided with positive electrode 7 on the positive silicon nitride film layer 41 of silicon substrate 1, positive electrode 7 is connect with silicon substrate 1.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (4)
1. a kind of solar cell with passivation layer structure, including silicon substrate (1), it is characterised in that: silicon substrate (1) front
Interior passivation layer (2), middle passivation layer (3) and outer passivation protection layer (4), positive outer passivation protection layer have been sequentially depositing with the back side
(4) it is set as silicon nitride film layer (41), the outer passivation protection layer (4) at the back side is set as silicon oxynitride film (42) or titanium dioxide
Film layer (43)；
Al-BSF is printed on the silicon oxynitride film (42) at the silicon substrate (1) back side or titanium oxide film layer (43)
(5), the Al-BSF (5) forms Ohmic contact with silicon substrate (1) by laser grooving and connect, and Al-BSF (5) back side is provided with
Back electrode (6)；
It is provided on the silicon substrate (1) positive silicon nitride film layer (41) positive electrode (7), the positive electrode (7) and silicon
Substrate (1) connection.
2. a kind of preparation method of the solar cell with passivation layer structure, comprising the following steps:
Step S01, suede structure making herbs into wool: is obtained by surface wool manufacturing using monocrystalline silicon piece；
Step S02, it spreads: being passed through phosphorus oxychloride and silicon wafer is reacted, realize diffusion；
Step S03, it etches: edge PN junction being etched using plasma etching and is removed, and carries out anneal oxidation；
Step S04, passivation layer (2) in growth: growing passivation layer (2) in one layer of deposition in silicon substrate (1) front and back, described
Interior passivation layer (2) is using thermal oxidation method or laughing gas oxidation or ozonisation or nitric acid solution chemical method deposition, and interior passivation layer (2) is set
It is set to silica coating；
Step S05, passivation layer (3) in growth: the passivation layer (3) in one layer of growth deposition on the interior passivation layer (2) of front and back,
The middle passivation layer (3) is deposited using PECVD or ALD or solid target through PVD method, and middle passivation layer (3) is set as three oxygen
Change two aluminum membranous layers or the film layer containing aluminum oxide；
Step S06, it grows outer passivation protection layer (4): being grown respectively on the middle passivation layer (3) of front and back blunt outside one layer of deposition
Change protective layer (4), the outer passivation protection layer (4) is deposited using PVD, CVD or ALD method；
Step S07, laser slotting: to the silicon chip back side laser slotting after plated film；
Step S08, silk-screen printing: the back side and positive printing are completed by silk-screen printing, form Al-BSF (5), back electrode (6)
With positive electrode (7), then it is sintered；
Step S09, LID: pass through light decay furnace or electrical pumping furnace；
Step S10, battery testing stepping finally sorted and packaged: is carried out to cell piece；
It is characterized by: the positive outer passivation protection layer (4) is set as silicon nitride film layer (41), the outer passivation at the back side
Protective layer (4) is set as silicon oxynitride film (42) or titanium oxide film layer (43).
3. a kind of preparation method of solar cell with passivation layer structure according to claim 2, it is characterised in that: step
In rapid S02, after diffusion, selective doping is carried out by laser.
4. a kind of preparation method of solar cell with passivation layer structure according to claim 2, it is characterised in that: step
In rapid S03, it can also be performed etching using wet process.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111916528A (en) * | 2020-06-29 | 2020-11-10 | 苏州腾晖光伏技术有限公司 | Preparation method of P-type crystalline silicon solar cell capable of reducing LETID |
| CN113745173A (en) * | 2021-09-14 | 2021-12-03 | 济南市半导体元件实验所 | Photoresist GPP chip with composite passivation film structure, preparation method and electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111916528A (en) * | 2020-06-29 | 2020-11-10 | 苏州腾晖光伏技术有限公司 | Preparation method of P-type crystalline silicon solar cell capable of reducing LETID |
| CN113745173A (en) * | 2021-09-14 | 2021-12-03 | 济南市半导体元件实验所 | Photoresist GPP chip with composite passivation film structure, preparation method and electronic device |
| CN113745173B (en) * | 2021-09-14 | 2024-10-18 | 济南晶恒电子有限责任公司 | Photoresist GPP chip with composite passivation film structure, preparation method and electronic device |
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