CN105226112B - A kind of preparation method of efficient crystal silicon solar batteries - Google Patents
A kind of preparation method of efficient crystal silicon solar batteries Download PDFInfo
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- CN105226112B CN105226112B CN201510623359.9A CN201510623359A CN105226112B CN 105226112 B CN105226112 B CN 105226112B CN 201510623359 A CN201510623359 A CN 201510623359A CN 105226112 B CN105226112 B CN 105226112B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 112
- 239000010703 silicon Substances 0.000 title claims abstract description 112
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 239000013078 crystal Substances 0.000 title claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000126 substance Substances 0.000 claims abstract description 27
- 238000004140 cleaning Methods 0.000 claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 238000005245 sintering Methods 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 238000001020 plasma etching Methods 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 238000009413 insulation Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 70
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 230000002708 enhancing effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 238000005457 optimization Methods 0.000 claims description 2
- QHMQWEPBXSHHLH-UHFFFAOYSA-N sulfur tetrafluoride Chemical compound FS(F)(F)F QHMQWEPBXSHHLH-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 229910021645 metal ion Inorganic materials 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000000992 sputter etching Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 239000002131 composite material Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 229910000510 noble metal Inorganic materials 0.000 abstract description 4
- 239000003518 caustics Substances 0.000 abstract description 2
- 238000009713 electroplating Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 47
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- 239000012528 membrane Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention discloses a kind of preparation method of efficient crystal silicon solar batteries, comprises the following steps：Wafer Cleaning；It is prepared by micro- compound matte of receiving；It is prepared by emitter stage；Silicon chip edge insulation, polished backside processing；It is prepared by positive silicon dioxide layer；Passivating back film preparation；It is prepared by front antireflection layer；Backside laser is slotted；It is prepared by full Al-BSF；Sintering；It is prepared by tin back electrode；Front lbg；It is prepared by front electrode；Annealing.The present invention is prepared for nano and micron composite structure matte using reactive ion etching or metal assistant chemical caustic solution, and absorbing for light is added comprehensively, conversion efficiency of solar cell can be effectively improved；The present invention prepares solar cell positive electrode using electroplating technology simultaneously, considerably reduces the use of noble metal, reduces production cost.
Description
Technical field
The present invention relates to the crystal silicon solar energy battery technology field in photovoltaic plant field, more particularly to a kind of efficient crystalline substance
Silicon solar cell preparation method.
Background technology
With the development of photovoltaic industry, in cell piece production, the lifting of photoelectric transformation efficiency and battery manufacture cost
Reduction is basic as whole theCourse of PV Industry.
In various solar cells, crystal silicon cell is always in occupation of most important status.In recent years, in the crystalline silicon sun
Battery improves efficiency and achieves great achievement and progress in terms of reducing cost, further increases it in following photovoltaic industry
Superiority.
At present, there are following two problems in the conventional use of technique of crystal silicon solar energy battery：First, by hair for many years
Exhibition, battery efficiency to a bottleneck, optimizes on common process and carries effect low effort；Second, in technical process
The noble metal used is more, causes with high costs.
The content of the invention
Goal of the invention：Present invention aims at there is provided a kind of system of crystal silicon solar batteries in view of the shortcomings of the prior art
Preparation Method, reduces into production cost, improves battery efficiency.
Technical scheme：The preparation method of efficient crystal silicon solar batteries of the present invention, comprises the following steps：
（1）Wafer Cleaning：Cleaning silicon chip, removes damaged layer on surface of silicon slice；
（2）It is prepared by micro- compound matte of receiving：Micron order matte is prepared in front side of silicon wafer first, then using reactive ion etching
Or metal Assisted Chemical Etching Process method prepares nanometer-scale texture, and it is nested on the micron order matte prepared before, is formed
Receive micro- compound matte, then pass through chemical liquid cleaning silicon chip surface, optimization nanometer suede structure, remove the dirty grain of surface residual
Son；
（3）It is prepared by emitter stage：Emitter stage is prepared using diffusion or ion implantation technology；
（4）Silicon chip edge insulation, polished backside processing and removal phosphorosilicate glass：Chemical corrosion method is first used, by silicon chip
Front is protected with moisture film, and the back side is directly contacted with corrosive chemicals, then silicon chip is put into HF solution, silicon chip surface before removal
The phosphorosilicate glass of formation；Chemicals chemically reacts with silicon chip back side and edge, so as to remove the PN junction at edge, the back side is with changing
Product contact is more, and reaction is more fierce, so that the processing being polished；
（5）It is prepared by positive silicon dioxide layer：Layer of silicon dioxide is generated in front side of silicon wafer；
（6）Passivating back film preparation：The composite membrane of one layer of alundum (Al2O3)+silicon nitride is prepared in silicon chip back side；
（7）It is prepared by front antireflection layer：Dual layer nitride silicon layer is deposited in front side of silicon wafer, antireflection layer is used as；
（8）Backside laser is slotted：Slotted by laser in silicon chip back side；
（9）It is prepared by full Al-BSF：Using silk-screen printing technique, full Al-BSF is prepared in silicon chip back side printing aluminium paste；
（10）Sintering：Silicon chip is sintered；
（11）It is prepared by tin back electrode：Using ultrasonic assistant welding manner, tin back electrode is directly welded in Al-BSF；
（12）Front lbg：Slotted by laser in front side of silicon wafer；
（13）It is prepared by front electrode：First nickel coating and layers of copper, then silver coating, are used as front electrode；
（14）Annealing：Silicon chip is annealed.
Further preferably technical scheme is the present invention, step（2）Middle reactive ion etching method prepares nanometer-scale texture
Method be：Nanometer-scale texture is etched in front side of silicon wafer by the plasma of oxygen, chlorine or sulfur tetrafluoride gas formation.
Preferably, step（2）The method that middle metal Assisted Chemical Etching Process method prepares nanometer-scale texture is：Using metal from
Sub- induced chemical corrosion reaction is carried out, so that in front side of silicon wafer formation nanometer-scale texture.
Preferably, step（2）The solution on middle cleaning silicon chip surface is BOE and hydrogen peroxide and DI water mixed solutions.
Preferably, step（6）Described in the preparation method of backside passivation film be：Using plasma strengthens chemical vapor deposition
Alundum (Al2O3)+silicon nitride structure prepared by area method, the wherein thickness of alundum (Al2O3) are 5 ~ 30 nm, and the thickness of silicon nitride is
60~150 nm。
Preferably, step（6）Described in passivating back membrane preparation method be：First three are prepared using atomic layer deposition method to aoxidize
Two aluminium, thickness is 5 ~ 25 nm, then using plasma enhancing chemical vapour deposition technique prepares silicon nitride after process annealing,
And be superimposed upon on alundum (Al2O3), the thickness of silicon nitride is 60 ~ 150 nm.
Preferably, step（5）The preparation method of middle front silica is：Using Ozone oxidation method or thermal oxidation method,
Layer of silicon dioxide is grown in silicon chip surface, its thickness is 2 ~ 10 nm.
Preferably, step（7）Middle front antireflection layer preparation method is：Using plasma strengthens chemical vapour deposition technique
Double-layer silicon nitride is deposited, wherein first layer thickness is 15 ~ 30 nm, and refractive index is 2.15 ~ 2.3；Second layer thickness is 50 ~ 60
Nm, refractive index is 2.0 ~ 2.1.
Preferably, step（8）Middle backside laser fluting is used as light source, fluting number using nanosecond green glow or psec ultraviolet light
It it is 40 ~ 150 μm for 90 ~ 150, groove width.
Preferably, step（12）Middle front lbg is using psec ultraviolet light as light source, and fluting number is 90 ~ 150
Root, 20 ~ 40 μm of groove width.
Preferably, step（3）The square resistance of middle emitter stage is 95 ~ 100 ohm.
Preferably, step（13）The preparation method of middle front electrode is：First chemical nickel plating, nickel layer thickness is 2 ~ 5 μm, so
Photoinduction electro-coppering being used afterwards, copper layer thickness is 15 ~ 25 μm, chemical silvering finally being used again, silver thickness is 3 ~ 6 μm.
Beneficial effect：（1）The present invention is using reactive ion etching or metal assistant chemical caustic solution in micron order matte
On the basis of prepare nanometer-scale texture, so as to form nano and micron composite structure matte, reflectivity is substantially less than the reflection of existing matte
Rate, adds absorbing for light comprehensively, can effectively improve conversion efficiency of solar cell；The present invention uses electroplating technology simultaneously
Solar cell positive electrode is prepared, the use of noble metal is considerably reduced, reduces production cost；
（2）Technique is combined present invention employs edge insulation and polished backside, edge PN junction, anti-leak-stopping can be removed
Electricity, can play the effect of polished backside again, and remove phosphorosilicate glass, improve battery conversion efficiency；
（3）The present invention is in the front generation layer of silicon dioxide layer of silicon chip, and can play effectively prevents power station end potential from luring
Lead decay（PID）The occurrence of, front passivation effect is served again；
（4）The present invention prepares the composite membrane of one layer of alundum (Al2O3)+silicon nitride, fully passivation silicon chip table in silicon chip back side
Face, the energy of sunshine is taken full advantage of from electrical point；
（5）The method that the silicon chip back side electrode of the present invention welds tin using ultrasonic assistant, can reduce cost, reduce
The use of noble metal, can play good electric action again.
Brief description of the drawings
Fig. 1 is the process chart of the preparation method of efficient crystal silicon solar batteries of the present invention.
Embodiment
Technical solution of the present invention is described in detail below by accompanying drawing, but protection scope of the present invention is not limited to
The embodiment.
Silicon chip uses p-type polysilicon piece in following examples.
Embodiment 1：（1）Cleaning silicon chip；（2）Prepared in front side of silicon wafer using reactive ion etching method and receive micro- combination fine hair
Face, reuses BOE and hydrogen peroxide and DI water mixed solution cleaning silicon chips surface；（3）Emitter stage is prepared using diffusion technique, launched
The square resistance of pole is 95 ohm；（4）Front side of silicon wafer is protected with moisture film, and the back side is directly contacted with corrosive chemicals, removes edge
PN junction and surface phosphorosilicate glass, while polished backside, polished backside back reflection rate is controlled 30；（5）Using Ozone oxidation method,
Layer of silicon dioxide is grown in silicon chip surface, thickness is 2nm；（6）Strengthen chemical vapor deposition in silicon chip back side using plasma
Area method（That is PECVD）Alundum (Al2O3)+silicon nitride composite membrane is prepared, the wherein thickness of alundum (Al2O3) is 5 nm, silicon nitride
Thickness is 60 nm；（7）Double-layer silicon nitride is deposited as antireflection layer in front side of silicon wafer using PECVD methods, wherein the first thickness
Spend for 15 nm, refractive index is 2.15；Second layer thickness is 50nm, and refractive index is 2.0；（8）Using nanosecond green glow as light source,
In silicon chip back side fluting, fluting number is 90, groove width is 40 μm；（9）Using silk-screen printing technique, in silicon chip back side printing
Aluminium paste prepares full Al-BSF；（10）Silicon chip is sintered using Fast Sintering stove, peak value furnace temperature is at 600 DEG C, and the time is 1min；
（11）Using ultrasonic assistant welding manner, tin back electrode is directly welded in Al-BSF；（12）Using psec ultraviolet light conduct
Light source is slotted in front side of silicon wafer, and fluting number is 90,20 μm of groove width；（13）In the first chemical nickel plating of front side of silicon wafer, nickel layer thickness
For 2 μm, then using photoinduction electro-coppering, copper layer thickness is 15 μm, and chemical silvering is finally used again, and silver thickness is 3 μm,
It is used as front electrode；（14）Using quick anneal oven to wafer anneal, solar battery sheet sample 1 is obtained.
Embodiment 2：（1）Cleaning silicon chip；（2）Received in front side of silicon wafer using the preparation of metal Assisted Chemical Etching Process method micro- compound
Matte, reuses BOE and hydrogen peroxide and DI water mixed solution cleaning silicon chips surface；（3）Prepared and launched using ion implantation technology
Pole, the square resistance of emitter stage is 100 ohm；（4）Front side of silicon wafer is protected with moisture film, and the back side is directly contacted with corrosive chemicals,
Edge PN junction and surface phosphorosilicate glass are removed, while polished backside, polished backside back reflection rate is controlled 33；（5）Using hot oxygen
Change method, layer of silicon dioxide is grown in silicon chip surface, and thickness is 10 nm；（6）Atomic layer deposition method is first used in silicon chip back side
（That is ALD）Prepare alundum (Al2O3), thickness is 25 nm, then silicon nitride prepared using PECVD methods after process annealing, and
It is superimposed upon on alundum (Al2O3), the thickness of silicon nitride is 150 nm；（7）Double-deck nitrogen is deposited in front side of silicon wafer using PECVD methods
SiClx is 30 nm as antireflection layer, wherein first layer thickness, and refractive index is 2.3；Second layer thickness is 60 nm, and refractive index is
2.1；（8）Using psec ultraviolet light as light source, in silicon chip back side fluting, fluting number is 150, groove width is 150 μm；（9）
Using silk-screen printing technique, full Al-BSF is prepared in silicon chip back side printing aluminium paste；（10）Silicon chip is carried out using Fast Sintering stove
Sintering, peak value furnace temperature is at 900 DEG C, and the time is 1min；（11）Using ultrasonic assistant welding manner, directly welded in Al-BSF
Tin back electrode；（12）Slotted using psec ultraviolet light as light source in front side of silicon wafer, fluting number is 150,40 μm of groove width；
（13）In the first chemical nickel plating of front side of silicon wafer, nickel layer thickness is 5 μm, then using photoinduction electro-coppering, and copper layer thickness is 25 μm,
Chemical silvering is finally used again, and silver thickness is 6 μm, is used as front electrode；（14）Using quick anneal oven to wafer anneal, obtain
To solar battery sheet sample 2.
Embodiment 3：（1）Cleaning silicon chip；（2）Received in front side of silicon wafer using the preparation of metal Assisted Chemical Etching Process method micro- compound
Matte, reuses BOE and hydrogen peroxide and DI water mixed solution cleaning silicon chips surface；（3）Prepared and launched using ion implantation technology
Pole, the square resistance of emitter stage is 95 ohm；（4）Front side of silicon wafer is protected with moisture film, and the back side is directly contacted with corrosive chemicals, is gone
Except edge PN junction and surface phosphorosilicate glass, while polished backside, polished backside back reflection rate is controlled 30；（5）Using thermal oxide
Method, grows layer of silicon dioxide, thickness is 2nm in silicon chip surface；（6）First three are prepared in silicon chip back side using ALD methods to aoxidize
Two aluminium, thickness is 5 nm, then using PECVD methods prepares silicon nitride after process annealing, and is superimposed upon on alundum (Al2O3),
The thickness of silicon nitride is 60 nm；（7）Double-layer silicon nitride is deposited as antireflection layer in front side of silicon wafer using PECVD methods, wherein
First layer thickness is 15 nm, and refractive index is 2.15；Second layer thickness is 50nm, and refractive index is 2.0；（8）Using psec ultraviolet light
As light source, in silicon chip back side fluting, fluting number is 90, groove width is 40 μm；（9）Using silk-screen printing technique, in silicon chip
Back up aluminium paste prepares full Al-BSF；（10）Silicon chip is sintered using Fast Sintering stove, peak value furnace temperature at 600 DEG C, when
Between be 1min；（11）Using ultrasonic assistant welding manner, tin back electrode is directly welded in Al-BSF；（12）It is purple using psec
Outer light is slotted as light source in front side of silicon wafer, and fluting number is 90,20 μm of groove width；（13）In the first chemical nickel plating of front side of silicon wafer,
Nickel layer thickness is 2 μm, then using photoinduction electro-coppering, and copper layer thickness is 15 μm, and chemical silvering is finally used again, and silver layer is thick
Spend for 3 μm, be used as front electrode；（14）Using quick anneal oven to wafer anneal, solar battery sheet sample 3 is obtained.
Embodiment 4：（1）Cleaning silicon chip；（2）Prepared in front side of silicon wafer using reactive ion etching method and receive micro- combination fine hair
Face, reuses BOE and hydrogen peroxide and DI water mixed solution cleaning silicon chips surface；（3）Emitter stage is prepared using diffusion technique, launched
The square resistance of pole is 98 ohm；（4）Front side of silicon wafer is protected with moisture film, and the back side is directly contacted with corrosive chemicals, removes edge
PN junction and surface phosphorosilicate glass, while polished backside, polished backside back reflection rate is controlled 31；（5）Using Ozone oxidation method,
Layer of silicon dioxide is grown in silicon chip surface, thickness is 6 nm；（6）Three oxidations two are prepared using PECVD methods in silicon chip back side
Aluminium+silicon nitride composite membrane, the wherein thickness of alundum (Al2O3) are 15 nm, and the thickness of silicon nitride is 100 nm；（7）Using PECVD
Method is in front side of silicon wafer deposition double-layer silicon nitride as antireflection layer, and wherein first layer thickness is 20 nm, and refractive index is 2.2；The
Two thickness degree are 55 nm, and refractive index is 2.0；（8）Using nanosecond green glow as light source, in silicon chip back side fluting, fluting number is
120, groove width be 100 μm；（9）Using silk-screen printing technique, full Al-BSF is prepared in silicon chip back side printing aluminium paste；（10）Make
Silicon chip is sintered with Fast Sintering stove, peak value furnace temperature is at 750 DEG C, and the time is 1min；（11）Welded using ultrasonic assistant
Mode, directly welds tin back electrode in Al-BSF；（12）Slotted using psec ultraviolet light as light source in front side of silicon wafer, fluting
Number is 120,30 μm of groove width；（13）In the first chemical nickel plating of front side of silicon wafer, nickel layer thickness is 4 μm, then using photoinduction
Electro-coppering, copper layer thickness is 20 μm, and chemical silvering is finally used again, and silver thickness is 5 μm, is used as front electrode；（14）Adopt
With quick anneal oven to wafer anneal, solar battery sheet sample 4 is obtained.
Comparative example：Using existing conventional producing line technology,（1）Cleaning silicon chip, is made in nitric acid, hydrofluoric acid mixed solution
Suede；（2）Emitter stage is prepared using diffusion technique, the square resistance of emitter stage is 90 ohm；（3）Silicon chip removes edge PN junction and table
Face phosphorosilicate glass；（4）Using Ozone oxidation method, layer of silicon dioxide is grown in silicon chip surface；（5）Existed using PECVD methods
Front side of silicon wafer deposition double-layer silicon nitride is used as antireflection layer；（ 6）Using silk-screen printing technique, back electrode, the back of the body of cell piece are prepared
Electric field and positive electrode；（7）Silicon chip is sintered by Fast Sintering technique, solar cell sample 5 is obtained.This sample conduct
Comparative example.
Sample 1,2,3,4 obtained by above-described embodiment is compared with the electrical property of the cell piece sample 5 of prior art,
As a result it is as follows：
| Sample sequence number | Voc/V | Isc/A | FF/% | Eta/% |
| 1 | 0.6605 | 9.278 | 79.48 | 20.02 |
| 2 | 0.6635 | 9.135 | 79.54 | 19.81 |
| 3 | 0.6700 | 8.992 | 79.44 | 19.67 |
| 4 | 0.6691 | 9.182 | 79.55 | 20.08 |
| Prior art | 0.6323 | 8.764 | 78.76 | 18.27 |
As described above, although the present invention has been represented and described with reference to specific preferred embodiment, it must not be explained
For to the limitation of itself of the invention., can be right under the premise of the spirit and scope of the present invention that appended claims are defined are not departed from
Various changes can be made in the form and details for it.
Claims (7)
1. a kind of preparation method of efficient crystal silicon solar batteries, it is characterised in that comprise the following steps：
（1）Wafer Cleaning：Cleaning silicon chip, removes damaged layer on surface of silicon slice；
（2）It is prepared by micro- compound matte of receiving：Micron order matte is prepared in front side of silicon wafer first, then using reactive ion etching or gold
Belong to Assisted Chemical Etching Process method and prepare nanometer-scale texture, and be nested on the micron order matte prepared before, formation is received micro-
Compound matte, then pass through chemical liquid cleaning silicon chip surface, optimization nanometer suede structure, the removal dirty particle of surface residual；
（3）It is prepared by emitter stage：Emitter stage is prepared using diffusion or ion implantation technology；
（4）Silicon chip edge insulation, polished backside processing and removal phosphorosilicate glass：Chemical corrosion method is first used, by front side of silicon wafer
Protected with moisture film, the back side is directly contacted with corrosive chemicals, then silicon chip is put into HF solution, silicon chip surface is formed before removal
Phosphorosilicate glass；
（5）It is prepared by positive silicon dioxide layer：Layer of silicon dioxide is generated in front side of silicon wafer；
（6）Passivating back film preparation：Using plasma enhancing chemical vapour deposition technique prepares alundum (Al2O3)+silicon nitride knot
The thickness of structure, wherein alundum (Al2O3) is 5 ~ 30 nm, and the thickness of silicon nitride is 60 ~ 150 nm；Or first use atomic layer deposition method
Alundum (Al2O3) is prepared, thickness is 5 ~ 25 nm, then using plasma strengthens chemical vapour deposition technique system after process annealing
Standby silicon nitride, and be superimposed upon on alundum (Al2O3), the thickness of silicon nitride is 60 ~ 150 nm；
（7）It is prepared by front antireflection layer：Using plasma strengthens chemical vapor deposition double-layer silicon nitride, wherein first
Thickness degree is 15 ~ 30 nm, and refractive index is 2.15 ~ 2.3；Second layer thickness is 50 ~ 60 nm, and refractive index is 2.0 ~ 2.1；
（8）Backside laser is slotted：Slotted by laser in silicon chip back side；
（9）It is prepared by full Al-BSF：Using silk-screen printing technique, full Al-BSF is prepared in silicon chip back side printing aluminium paste；
（10）Sintering：Silicon chip is sintered；
（11）It is prepared by tin back electrode：Using ultrasonic assistant welding manner, tin back electrode is directly welded in Al-BSF；
（12）Front lbg：Slotted by laser in front side of silicon wafer；
（13）It is prepared by front electrode：First nickel coating and layers of copper, then silver coating, are used as front electrode；
（14）Annealing：Silicon chip is annealed.
2. the preparation method of efficient crystal silicon solar batteries according to claim 1, it is characterised in that step（2）In it is anti-
Answer ion etching process prepare nanometer-scale texture method be：Pass through the plasma of oxygen, chlorine or sulfur tetrafluoride gas formation
Body etches nanometer-scale texture in front side of silicon wafer.
3. the preparation method of efficient crystal silicon solar batteries according to claim 1, it is characterised in that step（2）Middle gold
The method that category Assisted Chemical Etching Process method prepares nanometer-scale texture is：Carried out using the corrosion reaction of metal ion induced chemical, from
And in front side of silicon wafer formation nanometer-scale texture.
4. the preparation method of the efficient crystal silicon solar batteries according to claim 1 ~ 3 any one, it is characterised in that step
Suddenly（2）The chemical solution on middle cleaning silicon chip surface is BOE and hydrogen peroxide and DI water mixed solutions.
5. the preparation method of efficient crystal silicon solar batteries according to claim 1, it is characterised in that step（5）In just
The preparation method of face silica is：Using Ozone oxidation method or thermal oxidation method, layer of silicon dioxide is grown in silicon chip surface,
Its thickness is 2 ~ 10 nm.
6. the preparation method of efficient crystal silicon solar batteries according to claim 1, it is characterised in that step（8）The middle back of the body
Face lbg is using nanosecond green glow or psec ultraviolet light as light source, and fluting number is 90 ~ 150, groove width is 40 ~ 150 μm.
7. the preparation method of efficient crystal silicon solar batteries according to claim 1, it is characterised in that step（12）In just
Face lbg is using psec ultraviolet light as light source, and fluting number is 90 ~ 150,20 ~ 40 μm of groove width.
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