KR20130100432A - Method and system of manufacturing solar cell - Google Patents

Abstract

PURPOSE: A method and system for manufacturing a solar cell are provided to simplify manufacturing processes by forming first to third uneven parts with a reactive ion etching method. CONSTITUTION: Damage is removed from one side of a substrate. A first uneven part is formed on one side of the substrate. A second uneven part is formed on the surface of the first uneven part by etching one side of the substrate. A damaged layer and a reactant are simultaneously removed from one side of the substrate. The second uneven part is changed into a third uneven part. A first buffer layer, a second semiconductor layer, a first transparent conductive layer, and a first electrode are successively formed on one side of the substrate. A second buffer layer, a third semiconductor layer, a second transparent conductive layer, and a second electrode are successively formed on the other side of the substrate.

Description

Manufacturing method and manufacturing system of solar cell {Method and System of manufacturing Solar Cell}

The present invention relates to a solar cell, and more particularly to a substrate type solar cell.

Solar cells are devices that convert light energy into electrical energy using the properties of semiconductors.

The solar cell has a PN junction structure in which a P (positive) type semiconductor and an N (negative) type semiconductor are bonded to each other. When solar light is incident on a solar cell having such a structure, holes are generated in the semiconductor by the incident solar energy. holes and electrons are generated, and the holes (+) move toward the P-type semiconductor and the electrons (-) move toward the N-type semiconductor due to the electric field generated from the PN junction. This makes it possible to produce power.

Such a solar cell can be classified into a thin film solar cell and a substrate solar cell.

The thin-film solar cell is a solar cell manufactured by forming a semiconductor in the form of a thin film on a substrate such as glass or the like, and the substrate-type solar cell is a solar cell manufactured using a semiconductor material itself such as silicon as a substrate.

The substrate-type solar cell has a disadvantage in that it is thicker and has a higher cost than the thin-film solar cell, but has an advantage of excellent cell efficiency.

Hereinafter, a conventional substrate type solar cell will be described with reference to the drawings.

1 is a schematic cross-sectional view of a conventional substrate-type solar cell.

As can be seen in Figure 1, the conventional substrate-type solar cell is a P-type semiconductor layer 10, N-type semiconductor layer 20, the anti-reflection layer 30, the front electrode 40, P ⁺ type semiconductor layer 50 And a back electrode 60.

The P-type semiconductor layer 10 and the N-type semiconductor layer 20 formed on the P-type semiconductor layer 10 form a PN junction structure of a solar cell.

The antireflection layer 30 is formed on the upper surface of the N-type semiconductor layer 20 to prevent reflection of incident sunlight.

The P ⁺ -type semiconductor layer 50 is formed on the lower surface of the P-type semiconductor layer 10 to prevent the carriers formed by the sunlight from recombining and disappearing.

The front electrode 40 extends from the top of the antireflection layer 30 to the N-type semiconductor layer 20 and the rear electrode 60 is formed on the bottom surface of the P ⁺ -type semiconductor layer 50 .

In the conventional substrate-type solar cell as described above, when sunlight is incident therein, electrons and holes are generated in the PN junction structure, and the generated electrons are formed on the entire surface through the N-type semiconductor layer 20. Moving to the electrode 40, the generated holes are moved to the back electrode 60 through the P ⁺ type semiconductor layer 50 to produce power. Such a conventional substrate-type solar cell is manufactured by the following process.

2A to 2G are cross-sectional views illustrating a manufacturing process of a conventional substrate type solar cell.

First, as shown in FIG. 2A, the P-type semiconductor substrate 10a is prepared.

Next, as shown in FIG. 2B, one surface of the semiconductor substrate 10a is etched to form an uneven structure on one surface of the semiconductor substrate 10a.

Reactive ion etching (RIE) may be used to etch a surface of the semiconductor substrate 10a. The reactive ion etching method is a step of etching using a predetermined reaction gas under a high-pressure plasma state.

Meanwhile, when one surface of the semiconductor substrate 10a is etched by using a reactive ion etching method, a damaged layer 12 is formed on one surface of the semiconductor substrate 10a due to the high pressure plasma. And reactant 14, such as SiOx, remains.

Next, as shown in FIG. 2C, the damage layer 12 and the reactant 14 formed on one surface of the semiconductor substrate 10a are removed.

Removal of the damage layer 12 and the reactant 14 is made through a wet etching process using an etchant.

Next, as shown in FIG. 2D, a PN junction is formed by doping an N-type dopant on one surface of the semiconductor substrate 10a. That is, when the N-type dopant is doped on one surface of the semiconductor substrate 10a, the undoped P-type semiconductor layer 10 and the N-doped semiconductor layer 20 doped with the dopant are sequentially formed, .

Next, as can be seen in Figure 2e, to form an anti-reflection layer 30 on the N-type semiconductor layer (20).

Next, as shown in FIG. 2F, the front electrode material 40a is coated on the top surface of the anti-reflection layer 30, and the back electrode material 60a is coated on the bottom surface of the P-type semiconductor layer 10.

Next, as can be seen in Figure 2g, by performing a heat treatment (firing) at a high temperature, to complete the substrate-type solar cell as shown in FIG.

That is, when the heat treatment is performed at a high temperature, the front electrode material 40a penetrates the N-type semiconductor layer 20 through the antireflection layer 30 to form the front electrode 40, 60a penetrate into the lower surface of the P-type semiconductor layer 10 to form a P ⁺ -type semiconductor layer 50 on the lower surface of the P-type semiconductor layer 10 and a rear electrode 60 thereunder.

Such a conventional substrate type solar cell has a disadvantage in that the manufacturing process is complicated and the manufacturing cost is increased.

In particular, the above-described process of FIG. 2B and FIG. 2C both include an etching process for removing a predetermined region of the semiconductor substrate, wherein FIG. 2B is performed in a vacuum RIE apparatus, and FIG. 2C is performed in a wet etching apparatus under atmospheric pressure. Is performed. Also, the process of FIG. 2D is performed in a vacuum state. Therefore, since the substrate must be moved between a vacuum state and an atmospheric pressure state in order to perform the processes of FIGS. 2B, 2C, and 2D, the process is complicated and the manufacturing cost increases.

The present invention is devised to solve the above disadvantages, and an object of the present invention is to provide a method and a manufacturing system for a solar cell that can reduce the manufacturing cost by simplifying the manufacturing process.

In order to achieve the above object, the present invention provides a first concave-convex structure on one surface of the substrate while removing damage occurring on one surface of the substrate by a process of cutting a semiconductor ingot, and etching one surface of the substrate to form the first concave-convex surface. And a reactive ion etching device for forming a second uneven structure on the surface of the structure, and converting the second uneven structure into a third uneven structure while simultaneously removing a damage layer and a reactant formed on one surface of the substrate. Provided is a battery manufacturing system.

The reactive ion etching equipment, the first reactive ion etching equipment for forming a first uneven structure on one surface of the substrate while removing damage caused on one surface of the substrate by the process of cutting the semiconductor ingot, etching one surface of the substrate A second reactive ion etching apparatus for forming a second uneven structure on the surface of the first uneven structure, and simultaneously removing the damage layer and the reactant formed on one surface of the substrate, thereby removing the second uneven structure from the third uneven structure And third reactive ion etching equipment to deform.

The reactive ion etching apparatus may form a first uneven structure on one surface of the substrate while removing damage occurring on one surface of the substrate by cutting the semiconductor ingot, and etching one surface of the substrate to form the first uneven structure. A first reactive ion etching apparatus for forming a second uneven structure on the surface of the substrate, and a second for transforming the second uneven structure into a third uneven structure while simultaneously removing the damage layer and the reactant formed on one surface of the substrate. Reactive ion etching equipment.

The reactive ion etching equipment is a first reactive ion etching equipment for forming a first uneven structure on one surface of the substrate while removing damage caused on one surface of the substrate by the process of cutting the semiconductor ingot, and one surface of the substrate Etching to form a second concave-convex structure on the surface of the first concave-convex structure and the second concave-convex structure to transform the second concave-convex structure into a third concave-convex structure while simultaneously removing the damage layer and the reactants generated on one surface of the substrate Reactive ion etching equipment.

The reactive ion etching apparatus may form a first uneven structure on one surface of the substrate while removing damage occurring on one surface of the substrate by a process of cutting the semiconductor ingot, and etching one surface of the substrate to form a first uneven structure. It may include a first reactive ion etching equipment for forming a second concave-convex structure on the surface, and transforming the second concave-convex structure into a third concave-convex structure while simultaneously removing the damage layer and the reactant generated on one surface of the substrate have.

The reactive ion etching equipment may be arranged in an inline structure or a cluster structure.

Reactive ion etching equipment for forming the first uneven structure on one surface of the substrate while removing damage caused on one surface of the substrate by the process of cutting the semiconductor ingot, SF ₆ , NF ₃ , or a mixture of these can be used. It may be configured to set the RF power in the range of 15 to 30 kw, and to set the pressure in the chamber in the range of 0.15 to 0.5 torr.

Reactive ion etching equipment for etching the one surface of the substrate to form a second concave-convex structure on the surface of the first concave-convex structure, may use a mixed gas of SF ₆ , O ₂ , and Cl ₂ , 15 ~ 30 kw RF power can be set in the range, and can be configured to set the pressure in the chamber in the range of 0.15 to 0.5 torr.

Reactive ion etching equipment for transforming the second concave-convex structure into a third concave-convex structure while simultaneously removing the damage layer and the reactant may use a mixed gas of SF ₆ and Cl ₂ , and RF power in the range of 7 to 15 kw. It can be set, and can be configured to set the pressure in the chamber in the range 0.2 ~ 0.5 torr.

The solar cell manufacturing system may further include a doping equipment, an anti-reflection layer coating (ARC) equipment, a printing equipment, and a heat treatment equipment, wherein the solar cell manufacturing system is patterned (Patterning) equipment and plating (Plating) equipment may be further included.

The solar cell manufacturing system may further include a first set of thin film deposition equipment and a first electrode forming equipment. In this case, the solar cell manufacturing system may include a second thin film. 2nd thin film deposition equipment set and the second electrode (2nd Electrode) forming equipment may be further included.

The present invention also provides a method for forming a first uneven structure on one surface of a substrate while removing damage occurring on one surface of the substrate by a step of cutting a semiconductor ingot using a reactive ion etching method; Forming a second uneven structure on the surface of the first uneven structure by etching one surface of the substrate using a reactive ion etching method; And transforming the second uneven structure into a third uneven structure by simultaneously removing a damage layer and a reactant formed on one surface of the substrate by using a reactive ion etching method. Provide a method.

The process of forming the first concave-convex structure on one surface of the substrate while removing damage occurring on one surface of the substrate by cutting the semiconductor ingot is performed by a first reactive ion etching apparatus, and etching one surface of the substrate to The process of forming the second concave-convex structure on the surface of the concave-convex structure is performed in a second reactive ion etching apparatus, and the second concave-convex structure is removed by simultaneously removing the damage layer and the reactant formed on one surface of the substrate. The process may be performed in the third reactive ion etching equipment.

Forming a first uneven structure on one surface of the substrate while removing damage occurring on one surface of the substrate by a process of cutting the semiconductor ingot, and etching a surface of the substrate to form a second uneven structure on the surface of the first uneven structure The process of forming a is performed in a continuous process in a first reactive ion etching equipment, and the process of transforming the second concave-convex structure into a third concave-convex structure while simultaneously removing the damage layer and the reactant generated on one surface of the substrate is a second It can be performed in reactive ion etching equipment.

The process of forming the first concave-convex structure on one surface of the substrate while removing damage occurring on one surface of the substrate by cutting the semiconductor ingot is performed by a first reactive ion etching apparatus, and etching one surface of the substrate to The process of forming the second uneven structure on the surface of the uneven structure and the process of deforming the second uneven structure into the third uneven structure while simultaneously removing the damage layer and the reactant formed on one surface of the substrate may include the second reactive ion etching. It can be done in a continuous process on the equipment.

Forming a first uneven structure on one surface of the substrate by removing the damage generated on one surface of the substrate by the step of cutting the semiconductor ingot using the reactive ion etching method, and by using the reactive ion etching method, Forming a second uneven structure on the surface of the first uneven structure by etching one surface thereof, and simultaneously removing the damage layer and the reactant formed on one surface of the substrate by using a reactive ion etching method. May be performed in a continuous process in the first reactive ion etching equipment.

The process of forming the first concave-convex structure on one surface of the substrate while removing the damage generated on one surface of the substrate by the step of cutting the semiconductor ingot may be performed using SF ₆ , NF ₃ , or a mixed gas thereof. With RF power in the kw range, it can be carried out under pressure in the chamber in the range of 0.15 to 0.5 torr.

Etching one surface of the substrate to form a second uneven structure on the surface of the first uneven structure, using a mixed gas of SF ₆ , O ₂ , and Cl ₂ , RF power in the range of 15 ~ 30 kw And pressure in the chamber in the range of 0.15 to 0.5 torr.

The process for deforming the second uneven structure to the third uneven structure while simultaneously removing the damage layer and the reactant formed on one surface of the substrate may be performed using a mixed gas of SF ₆ and Cl ₂ , in a range of 7 to 15 kw. With RF power, it can be carried out under pressure in the chamber in the range of 0.2 to 0.5 torr.

After the process of deforming the second uneven structure to the third uneven structure while simultaneously removing the damage layer and the reactant formed on one surface of the substrate, a dopant is doped on one surface of the substrate to form the first semiconductor layer and the second semiconductor layer. Forming a PN junction layer; Forming an anti-reflection layer on the second semiconductor layer; Coating a first electrode material on the antireflective layer and coating a second electrode material on the first semiconductor layer; And performing a heat treatment on the first electrode material and the second electrode material.

After the process of deforming the second uneven structure to the third uneven structure while simultaneously removing the damage layer and the reactant formed on one surface of the substrate, a dopant is doped on one surface of the substrate to form the first semiconductor layer and the second semiconductor layer. Forming a PN junction layer; Forming an anti-reflection layer on the second semiconductor layer; Coating a second electrode material on the first semiconductor layer; Performing a heat treatment on the second electrode material; Forming a contact portion by removing a predetermined region of the anti-reflection layer; And forming a first electrode connected to the second semiconductor layer through the contact portion.

After the process of deforming the second uneven structure to the third uneven structure while simultaneously removing the damage layer and the reactant formed on one surface of the substrate, the first buffer layer, the second semiconductor layer, the first transparent conductive layer on one surface of the substrate , And a step of sequentially forming a first electrode; And sequentially forming a second buffer layer, a third semiconductor layer, a second transparent conductive layer, and a second electrode on the other surface of the substrate.

According to the present invention as described above, the following effects can be obtained.

According to the present invention, a process of forming a first uneven structure on one surface of the substrate while removing damage caused by a process of cutting a semiconductor ingot (SDR), by etching one surface of the substrate to the surface of the first uneven structure Reactive ion etching for the process of forming the second uneven structure in the process and the process of transforming the second uneven structure into the third uneven structure while removing the damage layer and the reactant formed on one surface of the substrate Since it can be performed using the RIE, the process can be simplified since there is no need to move the substrate between the vacuum state and the atmospheric pressure as in the prior art.

1 is a schematic cross-sectional view of a conventional substrate-type solar cell.
2A to 2G are cross-sectional views illustrating a manufacturing process of a conventional substrate type solar cell.
3A to 3G are cross-sectional views illustrating a manufacturing process of a solar cell according to an embodiment of the present invention.
4 to 8 illustrate a manufacturing system of a solar cell according to various embodiments of the present invention, each of which is a manufacturing system for implementing the manufacturing process according to FIGS. 3A to 3G described above.
9A to 9I are cross-sectional views illustrating a manufacturing process of a solar cell according to another embodiment of the present invention.
10 to 14 illustrate a manufacturing system of a solar cell according to various embodiments of the present invention, each of which is a manufacturing system for implementing the manufacturing process according to FIGS. 9A to 9I described above.
15A to 15G are cross-sectional views illustrating a manufacturing process of a solar cell according to still another embodiment of the present invention.
16 to 20 illustrate a manufacturing system of a solar cell according to various embodiments of the present disclosure, each of which is a manufacturing system for implementing the manufacturing process according to FIGS. 15A to 15G described above.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

3A to 3G are cross-sectional views illustrating a manufacturing process of a solar cell according to an embodiment of the present invention.

First, as shown in FIG. 3A, the semiconductor substrate 100a is prepared.

The semiconductor substrate 100a may use a silicon substrate, for example, a P-type silicon substrate.

As the silicon substrate, monocrystalline silicon or polycrystalline silicon can be used. Since monocrystalline silicon has high purity and low crystal defect density, the efficiency of the solar cell is high, but the price is too high and the economical efficiency is low. Polycrystalline silicon has a relatively high efficiency But because it uses low-cost materials and processes, the production cost is low and it is suitable for mass production.

The step of preparing the semiconductor substrate 100a includes a step of manufacturing a substrate by cutting a semiconductor ingot and a step of removing damage caused by the step of cutting the semiconductor ingot.

At this time, the process of removing the damage caused by the process of cutting the semiconductor ingot (Saw Damage Removal: SDR) uses a reactive ion etching method (RIE).

Such reactive ion etching can be performed using SF ₆ , NF ₃ , or a mixture thereof. In this case, the RF power is preferably in the range of 15 to 30 kw, and the pressure in the chamber is preferably in the range of 0.15 to 0.5 torr.

By such a reactive ion etching method, a first uneven structure is formed on one surface of the semiconductor substrate 100a. Although not shown, the reactive ion etching method may be applied to the other surface of the semiconductor substrate 100a. In this case, the first uneven structure is formed on the other surface of the semiconductor substrate 100a.

Next, as shown in FIG. 3B, one surface of the semiconductor substrate 100a, more specifically, one surface of the semiconductor substrate 100a having the first uneven structure is etched to form second unevenness on the surface of the first uneven structure. To form a structure. The second uneven structure is smaller in size than the first uneven structure.

Although not shown, the other surface of the semiconductor substrate 100a may also be etched together to form the second uneven structure on both one surface and the other surface of the semiconductor substrate 100a.

The etching of one surface of the semiconductor substrate 100a on which the first uneven structure is formed uses Reactive Ion Etching (RIE).

The reactive ion etching method uses Cl ₂ , SF ₆ , NF ₃ , HBr, or a mixture of two or more thereof as a main gas, and Ar, O ₂ , N ₂ , He, or a mixture of two or more thereof as an additive gas. Can be used. In particular, the reactive ion etching method may be performed using a mixed gas of SF ₆ , O ₂ , and Cl ₂ .

When using the reactive ion etching method, the RF power is preferably in the range of 15 to 30 kw, and the pressure in the chamber is preferably in the range of 0.15 to 0.5 torr.

When the RF power is less than 15 kw, etching may not be performed on one surface of the semiconductor substrate 100a. When the RF power is more than 30 kw, the etching may be performed by excessive etching on one surface of the semiconductor substrate 100a. The second uneven structure may not be formed.

If the pressure in the chamber is less than 0.15 torr, there is a problem that the plasma state becomes unstable, and if the pressure in the chamber exceeds 0.5 torr, there is a problem that the etching rate is slow.

In addition, when the reactive ion etching method is performed using the mixed gas of SF ₆ , O ₂ , and Cl ₂ , the composition ratio (sccm) of the gas is SF _6. : O ₂ : Cl ₂ The range of = (0.5-1.5): 1: (0.5-1) is preferable.

The SF ₆ serves as a main etching gas for etching one surface of the semiconductor substrate 100a. When the content of SF ₆ is less than the above range, etching may not be smoothly performed on one surface of the semiconductor substrate 100a, and when the content of SF ₆ exceeds the above range, a desired second uneven structure may not be obtained. Can be.

The O ₂ serves as a mask that prevents etching during the etching process, thereby selectively etching one surface of the semiconductor substrate 100a. When the content of O ₂ is out of the range, it may not be possible to obtain a desired second uneven structure.

The Cl ₂ serves to assist the etching of one surface of the semiconductor substrate 100a. When the Cl ₂ content is less than the above range, the etching progresses slowly, resulting in a second uneven structure having a too sharp shape. When the Cl ₂ content exceeds the above range, the second uneven structure may not be obtained due to excessive etching.

As described above, when one surface of the semiconductor substrate 100a is etched by using a reactive ion etching method, a damage layer 120 is formed on one surface of the semiconductor substrate 100a due to the plasma. O ₂ and Si react to produce a reactant 140 such as SiO x.

When one surface of the semiconductor substrate 100a is etched using the reactive ion etching method under the above reaction conditions, a second uneven structure is formed on one surface of the semiconductor substrate 100a. The peak is formed in a pointed shape, and the width of the second uneven structure may range from about 100 to 500 nm. In addition, the height of the second uneven structure may be a value range of 0.8 to 1.2 times the width (L).

3C, the damage layer 120 and the reactant 140 generated on one surface of the semiconductor substrate 100a are simultaneously removed.

The process of simultaneously removing the damage layer 120 and the reactant 140 generated on one surface of the semiconductor substrate 100a (DRE) uses a reactive ion etching method (RIE) as in FIG. 3B. .

In this case, the reactive ion etching method may be performed using a mixed gas of SF ₆ and Cl ₂ .

In this case, the RF power is preferably in the range of 7 to 15 kw, and the pressure in the chamber is preferably in the range of 0.2 to 0.5 torr.

When the RF power is less than 7 kw, the damage layer 120 and the reactant 140 may not be etched. When the RF power is more than 15 kw, the surface of the semiconductor substrate 100a may not be etched. Excessive etching may occur.

When the pressure in the chamber is less than 0.2 torr, there is a problem that the plasma state becomes unstable, and when the pressure in the chamber exceeds 0.5 torr, there is a problem that the etching speed is slow.

In addition, when the reactive ion etching method is performed using the mixed gas of SF ₆ and Cl ₂ , the composition ratio (sccm) of the gas is SF _6. : Cl ₂ = 3: The range of (1-3) is preferable.

When the content of the SF ₆ is less than the above range, the damage layer 120 and the reactant 140 may not be etched smoothly, and when the content of the SF ₆ exceeds the range, the second unevenness may be formed. The structure can be severely deformed.

When the Cl ₂ content is less than the above range, the etching progress is slowed down, and when the Cl ₂ content exceeds the above range, the desired uneven structure may not be obtained due to excessive etching.

When the damage layer 120 and the reactant 140 are simultaneously removed using the reactive ion etching method under the above reaction conditions, a change occurs in the second uneven structure generated in the above-described process of FIG. The structure is obtained.

That is, the second uneven structure is formed in the cross-sectional shape of the peak is sharp, while the third uneven structure has a cross section of the peak rounded shape. The width L of the third uneven structure finally obtained may range from about 100 to 500 nm, and the height H of the third uneven structure may range from about 50 to 400 nm.

On the other hand, the process of Figures 3a to 3c as described above can perform a continuous process while changing only the process conditions, such as process gas in one RIE equipment. However, the present invention is not necessarily limited thereto, and the process of FIG. 3A may be performed by the first RIE equipment, the process of FIG. 3B may be performed by the second RIE equipment, and the process of FIG. 3C may be performed by the third RIE equipment.

In addition, the process of FIGS. 3A and 3B may be performed in the first RIE equipment and the process of FIG. 3C may be performed in the second RIE equipment, and the process of FIG. 3A may be performed in the first RIE equipment and the process of FIGS. It can also be done in RIE equipment.

As shown in FIG. 3D, a dopant is doped on one surface of the semiconductor substrate 100a to form a PN junction layer including the first semiconductor layer 100 and the second semiconductor layer 200. That is, when a dopant is doped on one surface of the semiconductor substrate 100a, the first semiconductor layer 100 which is not doped by the dopant and the second semiconductor layer 200 which is doped by the dopant are sequentially formed to form a PN junction. do.

For example, when the semiconductor substrate 100a is formed of a P-type semiconductor layer, the semiconductor substrate 100a is doped with an N-type dopant, so that the first semiconductor layer 100 made of the P-type semiconductor layer and one surface of the first semiconductor layer 100 are formed. The second semiconductor layer 200 made of the N-type semiconductor layer may be formed.

One surface of the second semiconductor layer 200, specifically, an upper surface of the second semiconductor layer 200 may have a third uneven structure as described above, and one surface of the first semiconductor layer 100, specifically, As a result, the upper surface of the first semiconductor layer 100 may have a similar uneven structure. However, the upper surface of the first semiconductor layer 100 may have a concave-convex structure different from the third concave-convex structure provided in the second semiconductor layer 200 according to the diffusion degree of the dopant to be doped.

The doping process may be performed using a high temperature diffusion method or a plasma ion doping method.

In the step of doping the N-type dopant by using the high temperature diffusion method, POCl ₃ in the state in which the semiconductor substrate 100a is placed in a high temperature diffusion path of approximately 800 ° C. or more. Alternatively, the N-type dopant may be diffused to the surface of the semiconductor substrate 100a by supplying an N-type dopant gas such as PH ₃ .

In the step of doping the N-type dopant using the plasma ion doping method, POCl ₃ in a state in which the semiconductor substrate 100a is placed in a plasma generating device Alternatively, the plasma may be generated while supplying an N-type dopant gas such as PH ₃ . When the plasma is generated in this way, phosphorus (P) ions in the plasma are accelerated by the RF electric field and incident on one surface of the semiconductor substrate 100a to be ion doped.

After the plasma ion doping process, it is preferable to perform an annealing process for heating to an appropriate temperature. The reason for this is that when the annealing process is not performed, the doped ions can act as simple impurities, but when the annealing process is performed, the doped ions are activated by bonding with Si.

Meanwhile, a process of doping the N-type dopant is performed at a high temperature, and a by-product layer such as Phosphor-Silicate Glass (PSG) may be formed on the second semiconductor layer 200 during the doping process. An etching process such as a wet etching process may be further performed to remove the byproduct layer.

Next, as shown in FIG. 3E, an anti-reflection layer 300 is formed on the second semiconductor layer 200.

As the upper surface of the second semiconductor layer 200 is formed of a third uneven structure, the anti-reflection layer 300 is also formed of a similar uneven structure.

The anti-reflection layer 300 may be formed of silicon nitride or silicon oxide using plasma CVD.

3F, a first electrode material 400a is coated on the antireflection layer 300 and a second electrode material 600a is coated on the first semiconductor layer 100. More specifically, the first electrode material 400a is coated on the upper surface of the anti-reflection layer 300 which is not in contact with the second semiconductor layer 200, and the second semiconductor layer 200 is not in contact with the second semiconductor layer 200. The second electrode material 600a is coated on the bottom surface of the first semiconductor layer 100.

The coating process of the first electrode material 400a and the second electrode material 600a may be performed using Ag, Al, Ti, Mo, Ni, Cu, a mixture of two or more thereof, or two or more alloy pastes thereof. It can be made by a printing process.

Since the first electrode material 400a is formed on the surface where the sunlight is incident, the first electrode material 400a is formed in a predetermined pattern without being formed on the entire surface of the anti-reflection layer 300.

Since the second electrode material 600a is formed on the surface opposite to the surface where the sunlight is incident, the second electrode material 600a may be formed on the entire surface of the first semiconductor layer 100. However, in some cases, the second electrode material 600a may be formed in a predetermined pattern so that the reflected sunlight can be incident into the solar cell.

Next, as can be seen in Figure 3g, by performing a heat treatment (firing) at a high temperature, to complete the production of a solar cell according to an embodiment of the present invention.

When the heat treatment is performed at a high temperature, the first electrode material 400a penetrates the anti-reflection layer 300 and penetrates to the second semiconductor layer 200, thereby contacting the second semiconductor layer 200. The electrode 400 may be formed.

In addition, when the heat treatment is performed at a high temperature, the second electrode material 600a penetrates into the lower surface of the first semiconductor layer 100 to have a dopant concentration higher than the dopant concentration of the first semiconductor layer 100. The third semiconductor layer 500 is formed on the bottom surface of the first semiconductor layer 100, and the second electrode 600 is formed on the bottom surface of the third semiconductor layer 500. For example, when the first semiconductor layer 100 is made of a P-type semiconductor, the third semiconductor layer 500 is made of a P ⁺ type semiconductor layer.

Referring to the manufacturing system for implementing the manufacturing process of the solar cell according to an embodiment of the present invention as follows.

4 to 8 illustrate a manufacturing system of a solar cell according to various embodiments of the present invention, each of which is a manufacturing system for implementing the manufacturing process according to FIGS. 3A to 3G described above.

4 is related to a solar cell manufacturing system according to an embodiment of the present invention, as can be seen in Figure 4, the solar cell manufacturing system according to an embodiment of the present invention, the first reactive ion etching equipment (1st RIE), second reactive ion etching equipment (2nd RIE), third reactive ion etching equipment (3rd RIE), doping equipment, antireflective coating (ARC) equipment, printing equipment, and heat treatment Including equipment.

The first reactive ion etching equipment (1st RIE) is to form a first concave-convex structure on one surface of the substrate while removing (Saw Damage Removal: SDR) generated during the process of FIG. 3A, that is, the process of cutting a semiconductor ingot. Equipment for carrying out the process.

The second reactive ion etching apparatus (2nd RIE) is a process for forming a second concave-convex structure on the surface of the first concave-convex structure by etching the above-described process of Figure 3b, that is, the semiconductor substrate. It is equipment.

The third reactive ion etching equipment (3rd RIE) is a process of transforming the second uneven structure into a third uneven structure while simultaneously removing the damage layer and the reactant (DRE) in FIG. 3C. Equipment to carry out.

Such first to third reactive ion etching (RIE) equipment 710 may use a variety of equipment known in the art that can perform etching using a reaction gas in a plasma atmosphere.

The doping equipment is an apparatus for performing the above-described FIG. 3D process, that is, the dopant doping process. Such doping equipment may use equipment known in the art for doping by supplying dopant gas in a plasma atmosphere, or equipment known in the art for doping by supplying dopant gas to a high temperature diffusion furnace. Can also be used.

The anti-reflective layer coating (ARC) equipment is the above-mentioned FIG. 3E process, that is, the equipment for coating the anti-reflection layer. Such an anti-reflection layer coating (ARC) equipment may use PECVD equipment known in the art.

The printing equipment is a process for printing the electrode material, that is, the above-described FIG. 3F process, that is, various printing equipments known in the art, such as screen printing equipment, may be used.

The heat treatment (Firing) equipment is a device for performing the above-described Figure 3g process, it is possible to use a variety of heat treatment equipment known in the art.

5 is related to a manufacturing system of a solar cell according to another embodiment of the present invention, as can be seen in Figure 5, the manufacturing system of a solar cell according to another embodiment of the present invention, the first reactive ion etching equipment (1st RIE), second reactive ion etching equipment (2nd RIE), doping equipment, antireflective coating (ARC) equipment, printing equipment, and heat treatment equipment.

The first reactive ion etching equipment 1st RIE is a device for performing the above-described process of FIG. 3A and FIG. 3B. The process 3a and FIG. 3b are continuously performed.

The second reactive ion etching equipment 2nd RIE is equipment for performing the aforementioned process of FIG. 3C.

In addition, the doping equipment, the anti-reflection layer coating (ARC) equipment, the printing equipment (Printing), and the heat treatment (Firing) equipment is the same as FIG. 4 described above.

6 is related to a manufacturing system of a solar cell according to another embodiment of the present invention, as can be seen in Figure 6, the manufacturing system of a solar cell according to another embodiment of the present invention, the first reactive ion etching equipment ( 1st RIE), second reactive ion etching equipment (2nd RIE), doping equipment, antireflective coating (ARC) equipment, printing equipment, and heat treatment (Firing) equipment.

The first reactive ion etching equipment 1st RIE is equipment for performing the above-described process of FIG. 3A.

The second reactive ion etching equipment 2nd RIE is a device for performing the above-described process of FIG. 3B and FIG. 3C. The second reactive ion etching equipment 2nd RIE is used to change process conditions such as reaction gas in the second reactive ion etching equipment 2nd RIE. The process 3b and FIG. 3c are performed continuously.

In addition, the doping equipment, the anti-reflection layer coating (ARC) equipment, the printing equipment (Printing), and the heat treatment (Firing) equipment is the same as FIG. 4 described above.

FIG. 7 relates to a manufacturing system of a solar cell according to still another embodiment of the present invention. As can be seen in FIG. 7, the manufacturing system of a solar cell according to another embodiment of the present invention includes first reactive ion etching equipment. (1st RIE), doping equipment, antireflective coating (ARC) equipment, printing equipment, and heat treatment (Firing) equipment.

The first reactive ion etching equipment 1st RIE is a device for performing the above-described processes of FIGS. 3A, 3B, and 3C, and process conditions, such as reaction gas, in the first reactive ion etching equipment 1st RIE. 3a, 3b, and 3c are continuously performed while changing.

In addition, the doping equipment, the anti-reflection layer coating (ARC) equipment, the printing equipment (Printing), and the heat treatment (Firing) equipment is the same as FIG. 4 described above.

4 to 7 as described above relates to a structure in which equipments are arranged in-line, and the manufacturing system according to the present invention is not necessarily limited thereto. Certain devices may be arranged in a cluster structure.

8 is related to a manufacturing system of a solar cell according to another embodiment of the present invention, which is a first reactive ion etching equipment (1st RIE), a second reactive ion etching equipment (2nd RIE), and a third reactive ion etching The same as FIG. 4 described above, except that the equipment 3rd RIE has a cluster structure. In FIG. 8, the LRC is a load lock chamber.

On the other hand, although not shown, in the equipment structure according to FIG. 5 or 6, the first reactive ion etching equipment (1st RIE) and the second reactive ion etching equipment (2nd RIE) may be arranged in a cluster structure, and in FIG. In accordance with the equipment structure, the first reactive ion etching equipment 1st RIE may be arranged in a cluster structure.

9A to 9I are cross-sectional views illustrating a manufacturing process of a solar cell according to another embodiment of the present invention. Hereinafter, repetitive description of the same configuration as the above-described embodiment will be omitted.

First, as shown in FIG. 9A, the semiconductor substrate 100a is prepared.

The step of preparing the semiconductor substrate 100a includes a step of manufacturing a substrate by cutting a semiconductor ingot and a step of removing damage caused by the step of cutting the semiconductor ingot.

At this time, a process for removing damage caused by the process of cutting the semiconductor ingot (Saw Damage Removal: SDR) uses a reactive ion etching (RIE), thereby, one surface of the semiconductor substrate 100a The first uneven structure is formed in the.

Next, as shown in FIG. 9B, one surface of the semiconductor substrate 100a is etched to form a second uneven structure on the surface of the first uneven structure.

The process of etching one surface of the semiconductor substrate 100a is performed by using a reactive ion etching method (RIE) in the same manner as in the above-described embodiment, and thus, a damage layer is formed on one surface of the semiconductor substrate 100a. ) 120 may be formed and reactants 140 such as SiOx may remain.

Next, as can be seen in Figure 9c, while removing the damage layer 120 and the reactant 140 formed on one surface of the semiconductor substrate (100a) at the same time (Damage Removal Etching) as the third concave-convex structure Transform.

Reactive ion etching is also performed in the same manner as in the above-described embodiment to deform the second uneven structure to the third uneven structure while simultaneously removing the damage layer 120 and the reactant 140 formed on one surface of the semiconductor substrate 100a. This is done using RIE.

Next, as shown in FIG. 9D, a dopant is doped on one surface of the semiconductor substrate 100a to form a PN junction layer including the first semiconductor layer 100 and the second semiconductor layer 200.

Next, as shown in FIG. 9E, an antireflection layer 300 is formed on the second semiconductor layer 200.

Next, as shown in FIG. 9F, a second electrode material 600a is coated on the first semiconductor layer 100. More specifically, the second electrode material 600a is coated on the bottom surface of the first semiconductor layer 100 that is not in contact with the second semiconductor layer 200.

The coating process of the second electrode material 600a may include a printing process using Ag, Al, Ti, Mo, Ni, Cu, a mixture of two or more thereof, or two or more alloy pastes thereof.

Since the second electrode material 600a is formed on the surface opposite to the surface where the sunlight is incident, the second electrode material 600a may be formed on the entire surface of the first semiconductor layer 100. However, in some cases, the second electrode material 600a may be formed in a predetermined pattern so that the reflected sunlight can be incident into the solar cell.

Next, as can be seen in Figure 9g, by performing a heat treatment (firing) at a high temperature, to form a third semiconductor layer 500 and the second electrode 600.

When the heat treatment is performed at a high temperature, the second electrode material 600a penetrates into the lower surface of the first semiconductor layer 100 and thus has a third semiconductor having a dopant concentration higher than that of the first semiconductor layer 100. The layer 500 is formed on the bottom surface of the first semiconductor layer 100, and the second electrode 600 is formed on the bottom surface of the third semiconductor layer 500. For example, when the first semiconductor layer 100 is made of a P-type semiconductor, the third semiconductor layer 500 is made of a P ⁺ type semiconductor layer.

Next, as shown in FIG. 9H, the contact portion 350 is formed by removing a predetermined region of the anti-reflection layer 300.

The process of forming the contact portion 350 may be performed by a patterning process known in the art, such as a laser process or a photolithography process.

Next, as shown in FIG. 9I, a first electrode 400 connected to the second semiconductor layer 200 is formed through the contact portion 350.

The process of forming the first electrode 400 may be performed by a plating process such as electrolytic plating or electroless plating.

Referring to the manufacturing system for implementing the manufacturing process of the solar cell according to another embodiment of the present invention as follows.

10 to 14 illustrate a manufacturing system of a solar cell according to various embodiments of the present invention, each of which is a manufacturing system for implementing the manufacturing process according to FIGS. 9A to 9I described above.

FIG. 10 relates to a solar cell manufacturing system according to another embodiment of the present invention. As can be seen in FIG. 10, a solar cell manufacturing system according to an embodiment of the present invention may include first reactive ion etching equipment ( 1st RIE), second reactive ion etching equipment (2nd RIE), third reactive ion etching equipment (3rd RIE), doping equipment, antireflective layer coating (ARC) equipment, printing equipment, and heat treatment A) equipment is made.

The first reactive ion etching equipment 1st RIE is equipment for performing the aforementioned process of FIG. 9A.

The second reactive ion etching equipment 2nd RIE is equipment for performing the aforementioned process of FIG. 9B.

The third reactive ion etching equipment 3rd RIE is equipment for performing the above-described process of FIG. 9C.

The doping equipment is a device for performing the aforementioned process of FIG. 9D, that is, the dopant doping process.

The anti-reflection layer coating (ARC) equipment is the above-described process of FIG. 9E, that is, the equipment for coating the anti-reflection layer.

The printing equipment is the above-described process of FIG. 9F, that is, the printing of the electrode material.

On the other hand, although not shown, it may further include the heat treatment (Firing), patterning (Patterning) equipment, and plating (Plating) equipment.

The heat treatment (Firing) equipment is a device for performing the above-described process of Figure 9g.

The patterning device is a device for performing the aforementioned process of FIG. 9H, and the patterning device may be formed of laser equipment or photolithography equipment known in the art.

The plating equipment is a device for performing the aforementioned process of FIG. 9I, and the plating equipment may be formed of electrolytic or electroless plating equipment known in the art.

11 is related to a solar cell manufacturing system according to another embodiment of the present invention. As can be seen in FIG. 11, a solar cell manufacturing system according to another embodiment of the present invention may include a first reactive ion etching apparatus ( 1st RIE), second reactive ion etching equipment (2nd RIE), doping equipment, antireflective coating (ARC) equipment, and printing equipment.

The first reactive ion etching equipment 1st RIE is a device for performing the above-described process of FIG. 9A and FIG. 9B. Process 9a and FIG. 9b are performed continuously.

The second reactive ion etching equipment 2nd RIE is equipment for performing the above-described process of FIG. 9C.

In addition, the doping equipment, anti-reflective coating (ARC) equipment, printing equipment, heat treatment (Firing) equipment, patterning equipment, and plating equipment is the same as FIG.

In addition, as described above, heat treatment equipment, patterning equipment, and plating equipment may be further included.

12 is related to a manufacturing system of a solar cell according to another embodiment of the present invention, as can be seen in Figure 12, the manufacturing system of a solar cell according to another embodiment of the present invention, the first reactive ion etching equipment ( 1st RIE), second reactive ion etching equipment (2nd RIE), doping equipment, antireflective coating (ARC) equipment, and printing equipment.

The first reactive ion etching equipment 1st RIE is equipment for performing the aforementioned process of FIG. 9A.

The second reactive ion etching equipment 2nd RIE is a device for performing the above-described process of FIG. 9B and FIG. 9C, while changing process conditions such as a reaction gas in the second reactive ion etching equipment 2nd RIE. The process 9b and FIG. 9c are performed continuously.

In addition, the doping equipment, anti-reflective coating (ARC) equipment, printing equipment, heat treatment (Firing) equipment, patterning equipment, and plating equipment is the same as FIG.

In addition, as described above, heat treatment equipment, patterning equipment, and plating equipment may be further included.

FIG. 13 relates to a manufacturing system of a solar cell according to still another embodiment of the present invention. As can be seen from FIG. 13, a manufacturing system of a solar cell according to another embodiment of the present invention includes first reactive ion etching equipment. (1st RIE), doping equipment, anti-reflective coating (ARC) equipment, printing equipment, heat treatment (Firing) equipment, patterning (Patterning) equipment, and plating (Plating) equipment.

The first reactive ion etching equipment 1st RIE is a device for performing the above-described processes of FIGS. 9A, 9B, and 9C, and process conditions, such as a reaction gas, in the first reactive ion etching equipment 1st RIE. 9a, 9b, and 9c are continuously performed while changing.

In addition, the doping equipment, anti-reflective coating (ARC) equipment, printing equipment, heat treatment (Firing) equipment, patterning equipment, and plating equipment is the same as FIG.

In addition, as described above, heat treatment equipment, patterning equipment, and plating equipment may be further included.

10 to 13 as described above relates to a structure in which the equipment is arranged in-line (in-line), the manufacturing system according to the present invention as described below, the predetermined equipment is a cluster (Cluster) structure Can be arranged.

14 is related to a manufacturing system of a solar cell according to another embodiment of the present invention, which is a first reactive ion etching equipment (1st RIE), a second reactive ion etching equipment (2nd RIE), and a third reactive ion etching The same as in FIG. 10 described above, except that the equipment 3rd RIE has a cluster structure. In Figure 14 LRC is a load lock chamber.

Meanwhile, although not shown, in the equipment structure according to FIG. 11 or 12, the first reactive ion etching equipment 1st RIE and the second reactive ion etching equipment 2nd RIE may be arranged in a cluster structure, and FIG. 13. In accordance with the equipment structure, the first reactive ion etching equipment 1st RIE may be arranged in a cluster structure.

In addition, as described above, heat treatment equipment, patterning equipment, and plating equipment may be further included.

15A to 15G are cross-sectional views showing a manufacturing process of a solar cell according to another embodiment of the present invention, which relates to a solar cell having a structure in which a substrate type and a thin film type are combined. Hereinafter, repetitive description of the same configuration as that of the above-described embodiment will be omitted.

First, as shown in FIG. 15A, the semiconductor substrate 100a is prepared.

The step of preparing the semiconductor substrate 100a includes a step of manufacturing a substrate by cutting a semiconductor ingot and a step of removing damage caused by the step of cutting the semiconductor ingot.

At this time, a process for removing damage caused by the process of cutting the semiconductor ingot (Saw Damage Removal: SDR) uses a reactive ion etching (RIE), thereby, one surface of the semiconductor substrate 100a The first uneven structure is formed in the.

Next, as shown in FIG. 15B, one surface of the semiconductor substrate 100a is etched to form a second uneven structure on the surface of the first uneven structure.

The process of etching one surface of the semiconductor substrate 100a is performed by using a reactive ion etching method (RIE) in the same manner as in the above-described embodiment, and thus, a damage layer is formed on one surface of the semiconductor substrate 100a. ) 120 may be formed and reactants 140 such as SiOx may remain.

Next, as shown in FIG. 15C, the second uneven structure is transformed into a third uneven structure while simultaneously removing (DRE) the damage layer 120 and the reactant 140 generated on one surface of the semiconductor substrate 100a. .

Reactive ion etching is also performed in the same manner as in the above-described embodiment to deform the second uneven structure to the third uneven structure while simultaneously removing the damage layer 120 and the reactant 140 formed on one surface of the semiconductor substrate 100a. This is done using RIE.

By removing the damage layer 120 and the reactant 140, the first semiconductor layer 100 having a predetermined polarity is obtained. In particular, one surface of the first semiconductor layer 100 has a third uneven structure having a round peak as described above.

Next, as shown in FIG. 15D, the first buffer layer 150, the second semiconductor layer 200, and the first transparent conductive layer 250 are sequentially formed on one surface of the first semiconductor layer 100.

The first buffer layer 150 is formed in the form of a thin film on the upper surface of the first semiconductor layer 100. The first buffer layer 150 may be formed of an intrinsic semiconductor layer, or may be formed of a semiconductor layer doped with a low concentration of a dopant having the same polarity as that of the second semiconductor layer 200. The first buffer layer 150 may be deposited using a PECVD method.

The second semiconductor layer 200 may be formed in the form of a thin film on the upper surface of the first buffer layer 150, and may be formed as a semiconductor layer having a different polarity from that of the first semiconductor layer 100. For example, when the first semiconductor layer 100 is made of an N-type silicon wafer, the second semiconductor layer 200 is a P-type semiconductor layer, in particular, a P-type doped with a Group III element such as boron (B). It may be made of amorphous silicon. The second semiconductor layer 200 may be deposited by using a PECVD method.

The first transparent conductive layer 250 is formed in the form of a thin film on the upper surface of the second semiconductor layer 200. The first transparent conductive layer 250 collects carriers, for example, holes generated in the first semiconductor layer 100, and moves the collected carriers to the first electrode 400, which will be described later. The first transparent conductive layer 250 may be formed of a transparent conductive material such as indium tin oxide (ITO), ZnOH, ZnO: B, ZnO: Al, SnO ₂ , SnO ₂ : F, or the like by using MOCVD or sputtering. have.

Next, as shown in FIG. 15E, a first electrode 400 is formed on the first transparent conductive layer 250, specifically, on an upper surface of the first transparent conductive layer 250.

The first electrode 400 may be formed in a pattern so that sunlight can be transmitted into the solar cell. The first electrode 400 may be Ag, Al, Ti, Mo, Ni, Cu, a mixture of two or more thereof, or two or more thereof using a sputtering method, a printing method, or a plating method. It can be formed from an alloy.

Although the first electrode 400 may be formed as a single layer, a plurality of layers may be formed by appropriately combining a sputtering method, a printing method, or a plating method.

Next, as shown in FIG. 15F, the second buffer layer 450, the third semiconductor layer 500, and the second transparent conductive layer 550 are sequentially formed on the other surface of the first semiconductor layer 100.

The second buffer layer 450 is formed in the form of a thin film on the lower surface of the first semiconductor layer 100. The second buffer layer 450 may be formed of an intrinsic semiconductor layer, or may be formed of a semiconductor layer doped with a low concentration of a dopant having the same polarity as that of the third semiconductor layer 500. The second buffer layer 450 may be deposited using PECVD.

The third semiconductor layer 500 may be formed in the form of a thin film on the lower surface of the second buffer layer 450, and may be formed as a semiconductor layer having the same polarity as the first semiconductor layer 100. For example, when the first semiconductor layer 100 is made of an N-type silicon wafer, the third semiconductor layer 500 is an N-type semiconductor layer, in particular, an N-type doped with a Group 5 element such as phosphorus (P). It may be made of amorphous silicon. The third semiconductor layer 500 may be deposited by using a PECVD method.

The second transparent conductive layer 550 is formed on the bottom surface of the third semiconductor layer 500 in the form of a thin film. The second transparent conductive layer 550 collects carriers generated by the first semiconductor layer 100, for example, electrons, and moves the collected carriers to the second electrode 600 which will be described later. The second transparent conductive layer 550 may be formed of a transparent conductive material such as indium tin oxide (ITO), ZnOH, ZnO: B, ZnO: Al, SnO ₂ , SnO ₂ : F, or the like by using MOCVD or sputtering. have.

Next, as shown in FIG. 15G, a second electrode 600 is formed on the second transparent conductive layer 550, specifically, on the bottom surface of the second transparent conductive layer 550.

The second electrode 600 may be formed of Ag, Al, Ti, Ni, Cu, a mixture of two or more thereof, or two or more alloys thereof by using a sputtering method, a printing method, or a plating method. Can be formed.

Although the second electrode 600 may be formed as a single layer, a plurality of layers may be formed by appropriately combining a sputtering method, a printing method, or a plating method.

Referring to the manufacturing system for implementing the manufacturing process of the solar cell according to another embodiment of the present invention as follows.

16 to 20 illustrate a manufacturing system of a solar cell according to various embodiments of the present disclosure, each of which is a manufacturing system for implementing the manufacturing process according to FIGS. 15A to 15G described above.

FIG. 16 relates to a solar cell manufacturing system according to still another embodiment of the present invention. As can be seen in FIG. 16, a solar cell manufacturing system according to another embodiment of the present invention may include first reactive ion etching equipment. (1st RIE), second reactive ion etching equipment (2nd RIE), third reactive ion etching equipment (3rd RIE), a first set of thin film deposition (1st Thin film deposition) equipment and the first electrode (1st Electrode) forming equipment It is made to include.

The first reactive ion etching equipment 1st RIE is equipment for performing the aforementioned process of FIG. 15A.

The second reactive ion etching equipment 2nd RIE is equipment for performing the above-described process of FIG. 15B.

The third reactive ion etching equipment 3rd RIE is equipment for performing the above-described process of FIG. 15C.

The first thin film deposition equipment set includes the process of forming the first buffer layer 150, the second semiconductor layer 200, and the first transparent conductive layer 250 described above with reference to FIG. 15D. A set of equipment to perform.

The first thin film deposition equipment set may include first PECVD equipment for forming the first buffer layer 150, second PEVCD equipment for forming the second semiconductor layer 200, and the first PECVD equipment for forming the second semiconductor layer 200. 1 may be formed of a combination of MOCVD or sputtering equipment for forming the transparent conductive layer 250.

Alternatively, the first thin film deposition equipment set may include PEVCD equipment and the first transparent conductive layer 250 for forming the first buffer layer 150 and the second semiconductor layer 200 in a continuous process. It can be made of a combination of MOCVD or sputtering equipment to form a.

The first electrode (1st Electrode) forming equipment is a device for performing the above-described process of FIG. 15E, that is, the process of forming the first electrode 400, may be made of sputtering equipment, printing equipment, or plating equipment.

Although not shown, a second set of 2nd thin film deposition equipment and a second electrode 2nd Electrode forming equipment may be further included.

The second thin film deposition equipment set includes the process of forming the second buffer layer 450, the third semiconductor layer 500, and the second transparent conductive layer 550 described above with reference to FIG. 15F. A set of equipment to perform.

The second thin film deposition equipment set may include a first PECVD device for forming the second buffer layer 450, a second PEVCD device for forming the third semiconductor layer 500, and the second film. 2 may be a combination of MOCVD or sputtering equipment for forming the transparent conductive layer 550.

Alternatively, the second thin film deposition equipment set may include PEVCD equipment and the second transparent conductive layer 550 for forming the second buffer layer 450 and the third semiconductor layer 500 in a continuous process. It can be made of a combination of MOCVD or sputtering equipment to form a.

The second electrode forming equipment is a device for performing the above-described process of FIG. 15F, that is, the process of forming the second electrode 600, and may be formed of a sputtering apparatus, a printing apparatus, or a plating apparatus.

FIG. 17 relates to a solar cell manufacturing system according to another embodiment of the present invention. As can be seen in FIG. 17, a solar cell manufacturing system according to another embodiment of the present invention includes a first reactive ion etching apparatus (1st). RIE), a second reactive ion etching equipment (2nd RIE), a first set of thin film deposition equipment, and a first electrode forming equipment.

The first reactive ion etching equipment 1st RIE is a device for performing the above-described process of FIG. 15A and FIG. 15B, while changing process conditions such as a reaction gas in the first reactive ion etching equipment 1st RIE. The process 15a and FIG. 15b are continuously performed.

The second reactive ion etching equipment 2nd RIE is equipment for performing the above-described process of FIG. 15C.

In addition, the first thin film deposition equipment set and the first electrode formation equipment are the same as in FIG. 16 described above.

In addition, as described above, the second thin film deposition equipment set and the second electrode (2nd Electrode) forming equipment may further include.

FIG. 18 relates to a manufacturing system of a solar cell according to another embodiment of the present invention. As can be seen in FIG. 18, the manufacturing system of a solar cell according to another embodiment of the present invention may include first reactive ion etching equipment. (1st RIE), second reactive ion etching equipment (2nd RIE), first set of 1st thin film deposition equipment, and first electrode (1st Electrode) forming equipment.

The first reactive ion etching equipment 1st RIE is equipment for performing the aforementioned process of FIG. 15A.

The second reactive ion etching equipment 2nd RIE is a device for performing the above-described process of FIG. 15B and FIG. 15C, while changing process conditions such as a reaction gas in the second reactive ion etching equipment 2nd RIE. The process 15b and FIG. 15c are performed continuously.

In addition, the first thin film deposition equipment set and the first electrode forming equipment are the same as in FIG. 16 described above.

In addition, as described above, the second thin film deposition equipment set and the second electrode (2nd Electrode) forming equipment may further include.

19 is related to a manufacturing system of a solar cell according to still another embodiment of the present invention. As can be seen in FIG. 19, a manufacturing system of a solar cell according to another embodiment of the present invention includes first reactive ion etching equipment. (1st RIE), a first set of thin film deposition equipment, and a first electrode forming equipment.

The first reactive ion etching equipment 1st RIE is a device for performing the above-described processes of FIGS. 15A, 15B, and 15C, and process conditions, such as reaction gas, in the first reactive ion etching equipment 1st RIE. 15a, 15b and 15c are continuously performed while changing.

In addition, the first thin film deposition equipment set and the first electrode forming equipment are the same as in FIG. 16 described above.

In addition, as described above, the second thin film deposition equipment set and the second electrode (2nd Electrode) forming equipment may further include.

16 to 19 as described above relates to a structure in which the equipment is arranged in-line (in-line), the manufacturing system according to the present invention as described below, the predetermined equipment is a cluster (Cluster) structure Can be arranged.

20 is related to a manufacturing system of a solar cell according to another embodiment of the present invention, which is the first reactive ion etching equipment (1st RIE), the second reactive ion etching equipment (2nd RIE), and the third reactive ion etching The same as in FIG. 16 described above, except that the equipment 3rd RIE has a cluster structure. In FIG. 20, LRC is a load lock chamber.

Meanwhile, although not shown, in the equipment structure according to FIG. 17 or 18, the first reactive ion etching equipment 1st RIE and the second reactive ion etching equipment 2nd RIE may be arranged in a cluster structure, and in FIG. 19. In accordance with the equipment structure, the first reactive ion etching equipment 1st RIE may be arranged in a cluster structure.

In addition, as described above, the second thin film deposition equipment set and the second electrode (2nd Electrode) forming equipment may further include.

100a: semiconductor substrate 100: first semiconductor layer
120: damage layer 140: reactant
150: first buffer layer 200: second semiconductor layer
250: first transparent conductive layer 300: antireflection layer
350: contact portion 400a, 400: first electrode material, first electrode
450: second buffer layer 500: third semiconductor layer
550: second transparent conductive layer 600a, 600: second electrode material, second electrode

Claims (24)

A first uneven structure is formed on one surface of the substrate while removing damage occurring on one surface of the substrate by a process of cutting a semiconductor ingot, and a second uneven structure is formed on the surface of the first uneven structure by etching one surface of the substrate. And a reactive ion etching device for deforming the second uneven structure to the third uneven structure while simultaneously removing the damage layer and the reactant formed on one surface of the substrate. The method of claim 1,
The reactive ion etching equipment, the first reactive ion etching equipment for forming a first uneven structure on one surface of the substrate while removing damage caused on one surface of the substrate by the process of cutting the semiconductor ingot, etching one surface of the substrate A second reactive ion etching apparatus for forming a second uneven structure on the surface of the first uneven structure, and simultaneously removing the damage layer and the reactant formed on one surface of the substrate, thereby removing the second uneven structure from the third uneven structure Solar cell manufacturing system comprising a third reactive ion etching equipment for transformation into. The method of claim 1,
The reactive ion etching apparatus may form a first uneven structure on one surface of the substrate while removing damage occurring on one surface of the substrate by cutting the semiconductor ingot, and etching one surface of the substrate to form the first uneven structure. A first reactive ion etching apparatus for forming a second uneven structure on the surface of the substrate, and a second for transforming the second uneven structure into a third uneven structure while simultaneously removing the damage layer and the reactant formed on one surface of the substrate. Solar cell manufacturing system comprising a reactive ion etching equipment. The method of claim 1,
The reactive ion etching equipment is a first reactive ion etching equipment for forming a first uneven structure on one surface of the substrate while removing damage caused on one surface of the substrate by the process of cutting the semiconductor ingot, and one surface of the substrate Etching to form a second concave-convex structure on the surface of the first concave-convex structure and the second concave-convex structure to transform the second concave-convex structure into a third concave-convex structure while simultaneously removing the damage layer and the reactants generated on one surface of the substrate Solar cell manufacturing system comprising a reactive ion etching equipment. The method of claim 1,
The reactive ion etching apparatus may form a first uneven structure on one surface of the substrate while removing damage occurring on one surface of the substrate by a process of cutting the semiconductor ingot, and etching one surface of the substrate to form a first uneven structure. And forming a first uneven structure on the surface, and including a first reactive ion etching device for deforming the second uneven structure to the third uneven structure while simultaneously removing the damage layer and the reactant formed on one surface of the substrate. A solar cell manufacturing system characterized by the above-mentioned. The method of claim 1,
The reactive ion etching equipment is a solar cell manufacturing system, characterized in that arranged in an inline structure or cluster structure. The method of claim 1,
Reactive ion etching equipment for forming the first uneven structure on one surface of the substrate while removing damage caused on one surface of the substrate by the process of cutting the semiconductor ingot, SF ₆ , NF ₃ , or a mixture of these can be used. And a power setting within a range of 15 to 30 kw and a pressure within the chamber within a range of 0.15 to 0.5 torr. The method of claim 1,
Reactive ion etching equipment for etching the one surface of the substrate to form a second concave-convex structure on the surface of the first concave-convex structure, may use a mixed gas of SF ₆ , O ₂ , and Cl ₂ , 15 ~ 30 kw RF power can be set in the range, and the solar cell manufacturing system, characterized in that configured to set the pressure in the chamber in the range of 0.15 ~ 0.5 torr. The method of claim 1,
Reactive ion etching equipment for transforming the second concave-convex structure into a third concave-convex structure while simultaneously removing the damage layer and the reactant may use a mixed gas of SF ₆ and Cl ₂ , and RF power in the range of 7 to 15 kw. The solar cell manufacturing system, characterized in that configured to set the pressure in the chamber in the range of 0.2 to 0.5 torr. The method of claim 1,
The solar cell manufacturing system further comprises a doping (Doping) equipment, anti-reflective layer coating (ARC) equipment, printing (Printing), and heat treatment (Firing) equipment further comprises a solar cell manufacturing system. The method of claim 10,
The solar cell manufacturing system further comprises a patterning (Patterning) equipment and plating (Plating) equipment. The method of claim 1,
The solar cell manufacturing system is a solar cell manufacturing system, characterized in that further comprises a first set of thin film deposition (1st Thin film Deposition) equipment and the first electrode (1st Electrode) forming equipment. The method of claim 12,
The solar cell manufacturing system further comprises a 2nd thin film deposition equipment set and a 2nd electrode (2nd Electrode) forming equipment further comprises a solar cell manufacturing system. Forming a first concave-convex structure on one surface of the substrate while removing damage occurring on one surface of the substrate by a process of cutting a semiconductor ingot using a reactive ion etching method;
Forming a second uneven structure on the surface of the first uneven structure by etching one surface of the substrate using a reactive ion etching method; And
A method of manufacturing a solar cell comprising the step of transforming the second uneven structure into a third uneven structure by simultaneously removing a damage layer and a reactant formed on one surface of the substrate by using a reactive ion etching method. . 15. The method of claim 14,
The process of forming the first concave-convex structure on one surface of the substrate while removing damage occurring on one surface of the substrate by cutting the semiconductor ingot is performed by a first reactive ion etching apparatus, and etching one surface of the substrate to The process of forming the second concave-convex structure on the surface of the concave-convex structure is performed in a second reactive ion etching apparatus, and the second concave-convex structure is removed by simultaneously removing the damage layer and the reactant formed on one surface of the substrate. The step of transforming to a solar cell manufacturing method, characterized in that carried out in a third reactive ion etching equipment. 15. The method of claim 14,
Forming a first uneven structure on one surface of the substrate while removing damage occurring on one surface of the substrate by a process of cutting the semiconductor ingot, and etching a surface of the substrate to form a second uneven structure on the surface of the first uneven structure The process of forming a is performed in a continuous process in a first reactive ion etching equipment, and the process of transforming the second concave-convex structure into a third concave-convex structure while simultaneously removing the damage layer and the reactant generated on one surface of the substrate is a second Method for producing a solar cell, characterized in that performed in a reactive ion etching equipment. 15. The method of claim 14,
The process of forming the first concave-convex structure on one surface of the substrate while removing damage occurring on one surface of the substrate by cutting the semiconductor ingot is performed by a first reactive ion etching apparatus, and etching one surface of the substrate to The process of forming the second uneven structure on the surface of the uneven structure and the process of deforming the second uneven structure into the third uneven structure while simultaneously removing the damage layer and the reactant formed on one surface of the substrate may include the second reactive ion etching. Method for producing a solar cell, characterized in that performed in a continuous process in the equipment. 15. The method of claim 14,
Forming a first uneven structure on one surface of the substrate by removing the damage generated on one surface of the substrate by the step of cutting the semiconductor ingot using the reactive ion etching method, and by using the reactive ion etching method, Forming a second uneven structure on the surface of the first uneven structure by etching one surface thereof, and simultaneously removing the damage layer and the reactant formed on one surface of the substrate by using a reactive ion etching method. The process of transforming to the third uneven structure is a solar cell manufacturing method, characterized in that performed in a continuous process in the first reactive ion etching equipment. 15. The method of claim 14,
The process of forming the first concave-convex structure on one surface of the substrate while removing the damage generated on one surface of the substrate by the step of cutting the semiconductor ingot may be performed using SF ₆ , NF ₃ , or a mixed gas thereof. Method for manufacturing a solar cell, characterized in that carried out under a pressure in the chamber of 0.15 ~ 0.5 torr range with RF power in the kw range. 15. The method of claim 14,
Etching one surface of the substrate to form a second uneven structure on the surface of the first uneven structure, using a mixed gas of SF ₆ , O ₂ , and Cl ₂ , RF power in the range of 15 ~ 30 kw , 0.15 to 0.5 torr solar cell manufacturing method characterized in that carried out under pressure in the chamber range. 15. The method of claim 14,
The process for deforming the second uneven structure to the third uneven structure while simultaneously removing the damage layer and the reactant formed on one surface of the substrate may be performed using a mixed gas of SF ₆ and Cl ₂ , in a range of 7 to 15 kw. Method of manufacturing a solar cell, characterized in that carried out under a pressure in the chamber of 0.2 ~ 0.5 torr with RF power. 15. The method of claim 14,
After the process of deforming the second concave-convex structure into a third concave-convex structure while simultaneously removing the damage layer and the reactant generated on one surface of the substrate,
Forming a PN junction layer comprising a first semiconductor layer and a second semiconductor layer by doping a dopant on one surface of the substrate;
Forming an anti-reflection layer on the second semiconductor layer;
Coating a first electrode material on the antireflective layer and coating a second electrode material on the first semiconductor layer; And
The method of manufacturing a solar cell further comprising the step of performing a heat treatment on the first electrode material and the second electrode material. 15. The method of claim 14,
After the process of deforming the second concave-convex structure into a third concave-convex structure while simultaneously removing the damage layer and the reactant generated on one surface of the substrate,
Forming a PN junction layer comprising a first semiconductor layer and a second semiconductor layer by doping a dopant on one surface of the substrate;
Forming an anti-reflection layer on the second semiconductor layer;
Coating a second electrode material on the first semiconductor layer;
Performing a heat treatment on the second electrode material;
Forming a contact portion by removing a predetermined region of the anti-reflection layer; And
And a step of forming a first electrode connected to the second semiconductor layer through the contact portion. 15. The method of claim 14,
After the process of deforming the second concave-convex structure into a third concave-convex structure while simultaneously removing the damage layer and the reactant generated on one surface of the substrate,
Sequentially forming a first buffer layer, a second semiconductor layer, a first transparent conductive layer, and a first electrode on one surface of the substrate; And
And a step of sequentially forming a second buffer layer, a third semiconductor layer, a second transparent conductive layer, and a second electrode on the other surface of the substrate.

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