CN104576770A - Passivation and reflection reduction multi-layer film for high-efficiency black crystal silicon battery - Google Patents
Passivation and reflection reduction multi-layer film for high-efficiency black crystal silicon battery Download PDFInfo
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- CN104576770A CN104576770A CN201410852914.0A CN201410852914A CN104576770A CN 104576770 A CN104576770 A CN 104576770A CN 201410852914 A CN201410852914 A CN 201410852914A CN 104576770 A CN104576770 A CN 104576770A
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- layer
- passivation
- refractive index
- reflection reduction
- sinx
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 13
- 239000010703 silicon Substances 0.000 title claims abstract description 13
- 238000002161 passivation Methods 0.000 title abstract description 17
- 230000009467 reduction Effects 0.000 title abstract description 10
- 239000011011 black crystal Substances 0.000 title abstract 3
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 13
- 229910020286 SiOxNy Inorganic materials 0.000 claims abstract description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 9
- 238000002310 reflectometry Methods 0.000 abstract description 8
- 230000004075 alteration Effects 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 13
- 239000006117 anti-reflective coating Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 238000003475 lamination Methods 0.000 description 5
- 238000011031 large-scale manufacturing process Methods 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
Abstract
The invention relates to a passivation and reflection reduction multi-layer film for a high-efficiency black crystal silicon battery. The bottom layer of the passivation and reflection reduction multi-layer film is an SiOx layer, the refractive index of the SiOx layer ranges from 1.48 to 1.8, the thickness of the SiOx layer ranges from 2 nm to 20 nm, an intermediate layer of the passivation and reflection reduction multi-layer film is an SiNx layer, the SiNx layer can be formed by a single SiN layer and can also be formed by multiple SiN layers with different refractive indexes, the refractive index of the SiNx layer ranges from 1.9 to 2.20, the thickness of the SiNx layer ranges from 30 nm to 70 nm, the top layer of the passivation and reflection reduction multi-layer film is an SiOxNy layer, the refractive index of the SiOxNy layer ranges from 1.6 to 1.95, the thickness of the SiOxNy layer ranges from 20 nm to 60 nm, the total thickness of the passivation and reflection reduction multi-layer film ranges from 80 microns to 140 microns, and the refractive index of the passivation and reflection reduction multi-layer film ranges from 1.9 to 2.1. According to the passivation and reflection reduction multi-layer film for the high-efficiency black crystal silicon battery, the interface state of the surface of a battery piece can be reduced, the passivation effect is improved, the reflectivity of the surface of the battery piece can be reduced, short circuit current is increased, the PID attenuation resistance is high, the color of the prepared black battery is dark after laminating, the black battery is uniform, and chromatic aberration is avoided.
Description
Technical field
The present invention relates to area of solar cell, especially a kind of passivated reflection reducing of crystalline silicon high-efficiency black appliances pond penetrates multilayer film.
Background technology
At present, along with environmental problem and energy problem obtain the concern of more and more people, solar cell is as a kind of clean energy resource, and people have entered into new stage to its research and development.
The sunlight projected on solar cell array only has fractional transmission to be converted to electric energy to inside battery, and another part is then by its surface reflection.For this reason, be used to reduce reflectivity to greatest extent at present primarily of two kinds of methods, one is that matte is made in battery surface corrosion, forms multiple reflections, increases the effect number of times of light and silicon chip surface, thus improve battery to the absorption of light on its surface; Two is plate optics antireflective coating at battery surface, usually its optical thickness be wavelength 1/4th or 1/2nd.For single antireflection film, it only has good anti-reflective effect to single wavelength, and double-layer reflection reducing coating system can produce effective anti-reflective effect to sunlight in wide spectral range.At present, antireflective coating conventional in large-scale production mostly is single-layer silicon nitride silicon antireflective coating, has relatively high reflectivity and poor passivation effect.Reflectivity can be reduced and the antireflective coating improving passivation effect is the focus of solar cell research.
On the other hand, the SiNx passivated reflection reducing of traditional solar monocrystalline silicon battery surface penetrate rete nearly all make because refractive index is lower PID decay comparatively serious; Or in order to pursue PID Free, being all improve the refractive index that SiNx passivated reflection reducing penetrates rete, making crystal silicon battery conversion efficiency comparatively common process reduction 1-2%.And in current solar panel preparation process, market is more and more paid attention to cell piece aberration problem after lamination, minority enterprise or scientific research institution release its product of dealing with problems for aberration problem: black appliances pond, but these black appliances ponds otherwise preparation flow loaded down with trivial details, complicated, reduce cell piece conversion efficiency, although in the large-scale production of product line, be reduction of economic benefit.
Summary of the invention
The technical problem to be solved in the present invention is: the passivated reflection reducing proposing a kind of crystalline silicon high-efficiency black appliances pond penetrates multilayer film, this multilayer film can reduce reflectivity, improve passivation effect, improve efficiency of solar cell, there is excellent anti-PID attenuation characteristic, and after cell piece lamination color comparatively dark, evenly, no color differnece.。
The technical solution adopted in the present invention is: a kind of passivated reflection reducing of crystalline silicon high-efficiency black appliances pond penetrates multilayer film, and Direct precipitation ground floor film is on a silicon substrate defined as the bottom by described multilayer film, and away from substrate is then relative upper strata.It is SiO that the passivated reflection reducing of efficient black battery penetrates multilayer film bottom
xlayer, SiO
xlayer refractive index is 1.48-1.8, and thickness is 2-20nm; Multilayer film intermediate layer is single or multiple lift SiN
xlayer, total film thickness is 30 ~ 70nm, and refractive index is 1.9 ~ 2.2; Multilayer film top layer is SiO
xn
ylayer, its refractive index is 1.6-1.95, and thickness is 20-60nm; This multilayer film total film thickness is 80-140nm, and refractive index is 1.9 ~ 2.1.
The antireflective coating of current large-scale production mostly is individual layer or double-layer silicon nitride anti-reflecting film, and its anti-reflective effect and passivation effect are all relative poor.Inventor is finding after research, introduces SiO at bottom
xlayer, due to SiO
xlayer has excellent conductivity compared with SiNx layer, a part of electric charge of enrichment can be led away thus prevent causing because of electric charge accumulation passivated reflection reducing to penetrate film passivation effect and weaken, and effectively reduces the recombination-rate surface of cell piece, improves rete passivation effect, meanwhile, and SiO
xlayer can also improve the open circuit voltage of battery, reduces the overall refractive index that passivated reflection reducing penetrates layer.Middle SiNx layer further can reduce PID decay, and SiNx layer and SiO
xn
ylayer laminate significantly can reduce the reflectivity of cell piece side to light, Si O
xn
ylayer effectively can reduce the reflectivity of intermediate waves wave band, improves the short circuit current of cell piece, and after cell piece lamination, color is comparatively dark, and overall uniform colorless is poor.
The invention has the beneficial effects as follows: the passivated reflection reducing in the present invention's efficient crystal silicon black appliances pond is penetrated multilayer film due to bottom and introduced SiO
xlayer can effectively reduce silicon chip surface interfacial state, improves surface passivation effect, reduces the overall refractive index of antireflective coating simultaneously, increase anti-PID attenuation characteristic; Intermediate layer adopts individual layer or double-deck SiNx effectively can reduce PID decay; Top layer adopts SiO
xn
ylayer, forms lamination with intermediate layer, contrasts with traditional antireflective coating, intermediate waves wave band reflectivity can be reduced, improve the short circuit current of cell piece, and after making cell piece lamination, integral membrane look is black, overall film thickness range no color differnece in 80nm-140nm, is black.The passivated reflection reducing in the present invention's efficient crystal silicon black appliances pond penetrates multilayer film based on traditional monocrystalline silicon battery technique; only change the film quality structure that passivated reflection reducing penetrates film; can be compatible with conventional crystalline silicon battery process; to common PE CVD equipment without particular/special requirement; be easy to realize; be applicable to large-scale production, also can apply to some advanced battery process, as: the back of the body passivation cell, N-type double-side cell, MWT battery etc.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 is the structural representation of the preferred embodiments of the present invention;
In figure: 1.SiOx layer, 2. individual layer or double-deck SiNx layer, 3.SiOxNy layer.
Embodiment
The present invention is further detailed explanation with preferred embodiment by reference to the accompanying drawings now.These accompanying drawings are the schematic diagram of simplification, only basic structure of the present invention are described in a schematic way, and therefore it only shows the formation relevant with the present invention.
Embodiment 1
A kind of high-efficiency solar passivated reflection reducing that the present embodiment provides penetrates multilayer film black appliances pool preparation method, containing following steps:
1). by original silicon chip preliminary treatment, this preliminary treatment comprises making herbs into wool in battery process, the technique such as diffusion and etching;
2). use PECVD device to plate this passivated reflection reducing at diffusingsurface and penetrate multilayer film film, bottom is SiOx layer 1, and refractive index is 1.50, and thicknesses of layers is 2nm; Intermediate layer is individual layer SiN
xlayer 2, refractive index is 2.05, and thicknesses of layers is 60nm; Top layer is SiO
xn
ylayer 3, refractive index is 1.75, and thicknesses of layers is 25nm;
3). use conventional batteries typography printing back electrode, aluminium back surface field, positive grid line and positive electrode, and sinter;
Find through detecting, the photoelectric conversion efficiency of solar battery sheet that the present embodiment obtains and anti-current potential bring out decay PID characteristic and increase, and adopt black backboard be prepared into integral color after assembly comparatively dark, evenly, no color differnece.Concrete data see the following form 1:
The photoelectric conversion efficiency of the solar cell that table 1 the present embodiment obtains and PID
As can be seen from Table 1: laminated antireflection film process efficiency gain 0.2% prepared by the method, mainly due to short-circuit current gain 70 milliamperes; PID (potential induction attenuation) power attenuation simultaneously only has 3.5%, and the black appliances pond color uniform colorless of preparation is poor.
Embodiment 2
A kind of high-efficiency solar passivated reflection reducing that the present embodiment provides penetrates multilayer film black appliances pool preparation method, containing following steps:
1). by original silicon chip preliminary treatment, this preliminary treatment comprises making herbs into wool in battery process, the technique such as diffusion and etching;
2). use PECVD device to plate this passivated reflection reducing at diffusingsurface and penetrate multilayer film film, bottom is SiOx layer 1, and refractive index is 1.65, and thicknesses of layers is 20nm; Intermediate layer is double-deck SiNx layer 2, and bottom SiN refractive index is 2.15, and thicknesses of layers is 10nm, and upper strata SiN refractive index is 2.0, and thicknesses of layers is 50nm; Top layer is SiOxNy layer 3, and refractive index is 1.8, and thicknesses of layers is 50nm;
3). use conventional batteries typography printing back electrode, aluminium back surface field, positive grid line and positive electrode, and sinter;
Find through detecting, the photoelectric conversion efficiency of solar battery sheet that the present embodiment obtains and anti-current potential bring out decay PID characteristic and increase, and adopt black backboard be prepared into integral color after assembly comparatively dark, evenly, no color differnece.Concrete data see the following form 2:
The photoelectric conversion efficiency of the solar cell that table 2 the present embodiment obtains and PID
As can be seen from Table 2: laminated antireflection film process efficiency gain 0.3% prepared by the method, mainly due to short-circuit current gain 120 milliamperes; PID (potential induction attenuation) power attenuation simultaneously only has 3.5%, and the black appliances pond color uniform colorless of preparation is poor.
The just the specific embodiment of the present invention described in above specification, various illustrating is not construed as limiting flesh and blood of the present invention, person of an ordinary skill in the technical field after having read specification can to before described embodiment make an amendment or be out of shape, and do not deviate from the spirit and scope of the invention.
Claims (1)
1. the passivated reflection reducing in crystalline silicon high-efficiency black appliances pond penetrates a multilayer film, it is characterized in that: be included in SiOx layer, individual layer SiNx or double-deck SiNx layer and SiOxNy layer that silicon chip surface deposits successively; The total film thickness of described SiOx layer, individual layer or double-deck SiNx layer and SiOxNy layer is 80 ~ 140nm, and refractive index is 1.9 ~ 2.1;
In described SiOx layer, individual layer or double-deck SiNx layer and SiOxNy layer, SiOx layer is bottom; The thickness of described bottom SiOx layer is 2 ~ 20nm, and refractive index is 1.48 ~ 1.8;
In described SiOx layer, individual layer or double-deck SiNx layer and SiOxNy layer, single or multiple lift SiNx layer is intermediate layer; The total film thickness in described intermediate layer is 30 ~ 70nm, and refractive index is 1.9 ~ 2.2;
In described SiOx layer, individual layer or double-deck SiNx layer and SiOxNy layer, SiOxNy layer is top layer; The thickness of described top layer Si OxNy layer is 20 ~ 60nm, and refractive index is 1.6 ~ 1.95.
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|---|---|---|---|
| CN201410852914.0A CN104576770A (en) | 2014-12-31 | 2014-12-31 | Passivation and reflection reduction multi-layer film for high-efficiency black crystal silicon battery |
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| CN201410852914.0A CN104576770A (en) | 2014-12-31 | 2014-12-31 | Passivation and reflection reduction multi-layer film for high-efficiency black crystal silicon battery |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226112A (en) * | 2015-09-25 | 2016-01-06 | 中节能太阳能科技（镇江）有限公司 | A kind of preparation method of efficient crystal silicon solar batteries |
| CN105826403A (en) * | 2016-03-23 | 2016-08-03 | 江苏顺风光电科技有限公司 | High potential induced degradation (PID) resistance monocrystalline multilayer passivation antireflection film and preparation method thereof |
| CN106409926A (en) * | 2016-11-30 | 2017-02-15 | 庞倩桃 | Multilayer passivation film of crystalline-silicon battery and manufacturing method thereof |
| CN106449783A (en) * | 2016-10-28 | 2017-02-22 | 无锡尚德太阳能电力有限公司 | Polycrystalline silicon solar cell efficient multi-layer anti-reflective film and preparation method thereof |
| CN106558626A (en) * | 2016-11-25 | 2017-04-05 | 罗雷 | Crystal silicon solar energy battery and its manufacture method |
| CN109065642A (en) * | 2018-07-19 | 2018-12-21 | 横店集团东磁股份有限公司 | Photovoltaic polycrystalline battery preparation technique method |
| CN109461776A (en) * | 2018-09-25 | 2019-03-12 | 南昌大学 | A kind of low-cost high-efficiency crystal silicon solar batteries component |
| CN110600555A (en) * | 2019-08-29 | 2019-12-20 | 苏州腾晖光伏技术有限公司 | Antireflection film structure and PERC battery |
| CN111416022A (en) * | 2020-04-09 | 2020-07-14 | 浙江爱旭太阳能科技有限公司 | Preparation method for preparing black component solar cell positive film |
| CN111628010A (en) * | 2020-06-09 | 2020-09-04 | 山西潞安太阳能科技有限责任公司 | Crystalline silicon battery back passivation laminated structure and preparation process |
| WO2023125776A1 (en) * | 2021-12-30 | 2023-07-06 | 天合光能股份有限公司 | Solar cell front passivation film layer |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226112A (en) * | 2015-09-25 | 2016-01-06 | 中节能太阳能科技（镇江）有限公司 | A kind of preparation method of efficient crystal silicon solar batteries |
| CN105226112B (en) * | 2015-09-25 | 2017-09-05 | 中节能太阳能科技（镇江）有限公司 | A kind of preparation method of efficient crystal silicon solar batteries |
| CN105826403A (en) * | 2016-03-23 | 2016-08-03 | 江苏顺风光电科技有限公司 | High potential induced degradation (PID) resistance monocrystalline multilayer passivation antireflection film and preparation method thereof |
| CN106449783A (en) * | 2016-10-28 | 2017-02-22 | 无锡尚德太阳能电力有限公司 | Polycrystalline silicon solar cell efficient multi-layer anti-reflective film and preparation method thereof |
| CN106558626A (en) * | 2016-11-25 | 2017-04-05 | 罗雷 | Crystal silicon solar energy battery and its manufacture method |
| CN106409926A (en) * | 2016-11-30 | 2017-02-15 | 庞倩桃 | Multilayer passivation film of crystalline-silicon battery and manufacturing method thereof |
| CN109065642A (en) * | 2018-07-19 | 2018-12-21 | 横店集团东磁股份有限公司 | Photovoltaic polycrystalline battery preparation technique method |
| CN109461776A (en) * | 2018-09-25 | 2019-03-12 | 南昌大学 | A kind of low-cost high-efficiency crystal silicon solar batteries component |
| CN110600555A (en) * | 2019-08-29 | 2019-12-20 | 苏州腾晖光伏技术有限公司 | Antireflection film structure and PERC battery |
| CN111416022A (en) * | 2020-04-09 | 2020-07-14 | 浙江爱旭太阳能科技有限公司 | Preparation method for preparing black component solar cell positive film |
| CN111628010A (en) * | 2020-06-09 | 2020-09-04 | 山西潞安太阳能科技有限责任公司 | Crystalline silicon battery back passivation laminated structure and preparation process |
| WO2023125776A1 (en) * | 2021-12-30 | 2023-07-06 | 天合光能股份有限公司 | Solar cell front passivation film layer |
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Address after: 213000 No. 99 Yang Hu Road, Wujin hi tech Industrial Development Zone, Jiangsu, Changzhou Applicant after: Jiangsu Shunfeng Photovoltaic Technology Co., Ltd. Address before: 213169, Jiangsu province Changzhou city Wujin District snow town industrial concentration area Applicant before: Jiangsu Shunfeng Photovoltaic Technology Co., Ltd. |
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