CN105702749A - Polycrystalline multilayer passivation antireflection film with high PID resistance and preparation method thereof - Google Patents
Polycrystalline multilayer passivation antireflection film with high PID resistance and preparation method thereof Download PDFInfo
- Publication number
- CN105702749A CN105702749A CN201610168721.2A CN201610168721A CN105702749A CN 105702749 A CN105702749 A CN 105702749A CN 201610168721 A CN201610168721 A CN 201610168721A CN 105702749 A CN105702749 A CN 105702749A
- Authority
- CN
- China
- Prior art keywords
- layer
- sin
- optical optimization
- refractive index
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000002161 passivation Methods 0.000 title abstract description 12
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 47
- 230000003287 optical effect Effects 0.000 claims abstract description 29
- 238000005457 optimization Methods 0.000 claims abstract description 28
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 17
- 229910020286 SiOxNy Inorganic materials 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229920005591 polysilicon Polymers 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 94
- 239000002356 single layer Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000001131 transforming effect Effects 0.000 abstract description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 5
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a polycrystalline multilayer passivation antireflection film with high PID resistance and a preparation method thereof. The method comprises the steps as follows: a polycrystalline silicon wafer enters a PECVD furnace body after being etched; oxygen-containing gases of oxygen or air and the like are introduced; multilayer passivation antireflection film layers are deposited; the front surface of a polycrystalline silicon wafer substrate is sequentially provided with a bottom SiNx layer, an intermediate SiNx layer, a single-layer or multi-layer optical optimization SiNx layer and a top optical optimization SiOxNy layer, of which the refractive indexes are reduced progressively, from bottom to top; the total film thickness is 70-135nm; and the total refractive index is 1.95-2.20. Only the preparation method during PECVD and the film structure of the passivation antireflection film are changed on the basis of a traditional polycrystalline silicon battery technology; and the polycrystalline multilayer passivation antireflection film can be compatible with a traditional crystalline silicon battery technology, and can be produced by directly utilizing or slightly transforming ordinary etching equipment and PECVD equipment.
Description
Technical field
The present invention relates to solar energy crystal silicon battery and manufacture field, the polycrystalline multilamellar passivated reflection reducing of especially a kind of high PID resistance penetrates film and preparation method thereof。
Background technology
Along with environmental problem and energy problem obtain the concern of more and more people, solar cell is as a kind of clean energy resource, and its research and development have been had been introduced into a new stage by people。PID (potentialinduceddegradation) effect refers under long-term action of high voltage, assembly exists between glass and encapsulating material leaky, causing surface passivation antireflective coating before this to lose efficacy, then PN junction lost efficacy, and finally made assembly property reduce。All there is certain PID Problem of Failure in the P type solar energy crystal silicon component of traditional handicraft, so research PID phenomenon, develops one of the target that the solar cell of PIDFree is research and development department of vast solar energy manufacturer and part research institutions。More general and stricter is double; two 85PID tests at present, and its test condition is the negative voltage of 1000V, the ambient temperature of 85 DEG C, the humidity of 85%, the testing time of 96h, the final peak power output attenuation ratio of assembly just can determine that less than 5% as PID test passes, i.e. PIDFree。
The SiNx passivated reflection reducing of tradition solar energy polycrystal battery surface is penetrated rete and is nearly all made because refractive index is relatively low PID decay comparatively serious；Existing market is in order to pursue PIDFree, and main method is to improve the refractive index of SiNx rete, but the more conventional technique of battery conversion efficiency reduces 1-2%；Also having method is exactly the ozone O using ultraviolet ionization, high frequency ozone generator to generate3Oxidized silicon chip surface, generates relatively thin SiOxLayer or use laughing gas N2OPECVD method directly deposits one layer of SiO at silicon chip surfacexThin film, makes battery have certain PID resistance。
On the other hand, the antireflective coating that in current large-scale production, polycrystalline battery surface is conventional mostly is two to three layers silicon nitride, generally its optical thickness be specific wavelength 1/4th or 1/2nd。For single-layer silicon nitride silicon antireflective coating, single wavelength is only had good anti-reflective effect by it, has of a relatively high reflectance and poor passivation effect。Reflectance can be reduced and improve the focus that the antireflective coating of passivation effect is solar cell research。
Summary of the invention
The technical problem to be solved in the present invention is: the polycrystalline multilamellar passivated reflection reducing proposing a kind of high PID resistance penetrates film and preparation method thereof, this method need not use ozone devices or additive method silicon chip top layer after etching specially to increase SiOx layer, after directly using common etching apparatus and PECVD device or transforming a little。Passivated reflection reducing prepared by the method penetrates film can reduce reflectance, improves passivation effect, improves efficiency of solar cell, and has very excellent anti-PID attenuation characteristic。
The technical solution adopted in the present invention is: the polycrystalline multilamellar passivated reflection reducing of a kind of high PID resistance penetrates film, including the bottom SiN set gradually from bottom to top at polysilicon chip substrate front surfacexLayer, intermediate layer SiNxLayer, single or multiple lift optical optimization layer SiNxLayer and top layer optical optimization layer SiOxNyLayer；Described bottom SiNxLayer, intermediate layer SiNxLayer, single or multiple lift optical optimization layer SiNxLayer and top layer optical optimization layer SiOxNyThe refractive index of layer is successively decreased；Described bottom SiNxLayer, intermediate layer SiNxLayer, single or multiple lift optical optimization layer SiNxLayer and top layer optical optimization layer SiOxNyThe total film thickness of layer is 70～135nm, and total refractive index is 1.95～2.20。
Further, bottom SiN of the present inventionxLayer, intermediate layer SiNxLayer and single or multiple lift optical optimization layer SiNxLayer all adopts PECVD to prepare；Described bottom SiNxThe refractive index of layer is 2.15～2.35, and thickness is 4～15nm；Described intermediate layer SiNxThe refractive index of layer is 2.10～2.30, and thickness is 10～25nm；Described single or multiple lift optical optimization layer SiNxThe refractive index of layer is 1.95～2.25, and thickness is 20～65nm。
Further say, top layer optical optimization layer SiO of the present inventionxNyLayer adopts PECVD by oxygen-containing gas and SiH4、NH3Deposition forms together；Its thickness is 15～60nm, and refractive index is 1.6～1.95。
Meanwhile, present invention also offers the preparation method that the polycrystalline multilamellar passivated reflection reducing of a kind of high PID resistance penetrates film, comprise the following steps:
1) polysilicon chip common process performs etching after processing；
2) after etching, polysilicon chip, by the PECVD cavity carrier feeding 300 DEG C to 550 DEG C, passes into oxygen-containing gas 3min to 20min；
3) PECVD device plating multilamellar passivated reflection reducing is used to penetrate film；Including the bottom SiN set gradually from bottom to top at polysilicon chip substrate front surfacexLayer, intermediate layer SiNxLayer, single or multiple lift optical optimization layer SiNxLayer and top layer optical optimization layer SiOxNyLayer；
4) use conventional batteries typography printing back electrode, aluminum back surface field, positive grid line and anelectrode, and sinter。
Principles of the invention is: after etching, polysilicon chip enters in the PECVD cavity between 300 DEG C to 550 DEG C, passes into the oxygen-containing gas such as oxygen or air with after certain time, and silicon chip surface grown the hot SiO of thin layer2Layer, this SiOx layer is finer and close, has better passivation effect, can effectively reduce the recombination-rate surface of cell piece；And this densification SiOx layer relatively thin (0.1nm-2nm), the tunneling effect of electronics is clearly, can by battery surface be enriched with a part of electric charge lead away from, prevent the potential induction attenuation (PID) because electric charge accumulation causes at battery surface, make battery have anti-PID attenuation characteristic。
Multilamellar passivated reflection reducing penetrates the SiN of film bottom high index of refractionxThe introducing of layer both can strengthen rete passivation effect, again can the effective free positively charged ion in barrier assembly, be effectively improved the anti-PID attenuation characteristic of battery；Reduce multilamellar SiN according to certain rules successivelyxLayer can also be greatly reduced the reflectance of cell piece side to light while having certain PID resistance, it is possible to effectively reduces the reflectance of intermediate waves wave band, improves the short circuit current of cell piece；SiO in conjunction with top layer low-refractionxNyLayer so that the refractive index of overall rete is lower, continues to increase incident ray ratio, improves short circuit current, and after cell piece lamination, color is dark, and overall uniform colorless is poor。Adopting polycrystalline multilayer film battery PID resistance prepared by the method splendid, the assembly of preparation can pass through the PID test on market under double; two 85 conditions of non-resistance EVA, and battery conversion efficiency is higher than the conventional PECVD coating process of tradition。
The invention has the beneficial effects as follows: based on conventional polysilicon battery process, preparation method when only changing PECVD and passivated reflection reducing penetrate the film quality structure of film, can be compatible with conventional crystalline silicon battery process, can produce after directly using common etching apparatus and PECVD device or transforming a little。The method to equipment and polysilicon chip without particular/special requirement, be easily achieved and owing to passing into the oxygen-containing gas such as oxygen or air before depositional coating; do not have safety problem during vent gas treatment; suitable in large-scale production; also can operate with some advanced battery process, as: the back of the body passivation cell, N-type double-side cell, MWT battery etc.。
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described。
Fig. 1 is the structural representation of the present invention；
In figure: 1, bottom SiNx layer；2, intermediate layer SiNxLayer；3, single or multiple lift optical optimization layer SiNxLayer；4, top layer optical optimization layer SiOxNyLayer。
Detailed description of the invention
Presently in connection with accompanying drawing and preferred embodiment, the present invention is further detailed explanation。These accompanying drawings are the schematic diagram of simplification, and the basic structure of the present invention is only described in a schematic way, and therefore it only shows the composition relevant with the present invention。
The polycrystalline multilamellar passivated reflection reducing of a kind of high PID resistance as shown in Figure 1 penetrates membrane structure, including the bottom SiN set gradually from bottom to top at polysilicon chip substrate front surfacexLayer 1, intermediate layer SiNxLayer 2, single or multiple lift optical optimization layer SiNxLayer 3 and top layer optical optimization layer SiOxNyLayer 4。These retes refractive index from bottom to top is successively decreased, and its total film thickness is 70～135nm, and total refractive index is 1.95～2.20。
It is further described below by two groups of embodiments:
Embodiment 1
1) by original silicon chip pretreatment, this pretreatment includes the techniques such as the making herbs into wool in battery process, diffusion and etching；
2) it is warming up to 500 DEG C after the PECVD device of silicon chip entrance 380 DEG C after etching, first the logical oxygen-containing gas 15min such as oxygen or air in PECVD cavity；It is sequentially depositing the multilamellar SiN that refractive index reduces according to certain rules successively again on polysilicon chip surfacexLayer, wherein bottom SiNxLayer, refractive index is 2.35, and thicknesses of layers is 10nm；Intermediate layer SiNxLayer, refractive index is 2.2, and thicknesses of layers is 20nm；Monolayer SiNxLayer, refractive index is 2.10, and thicknesses of layers is 30nm；Use PECVD device at diffusingsurface plating residue SiOxNyLayer, refractive index is 1.75, and thicknesses of layers is 30nm；
4) use conventional batteries typography printing back electrode, aluminum back surface field, positive grid line and anelectrode, and sinter。
Finding through detection, the photoelectric transformation efficiency of the solar battery sheet that the present embodiment obtains increases and PID resistance has bigger lifting。Concrete data are shown in table 1 below:
The photoelectric transformation efficiency of the solaode that table 1 the present embodiment obtains and PID
As can be seen from Table 1: double-layer reflection reducing coating process efficiency gain 0.11% prepared by the method, mainly due to short-circuit current gain 50 milliamperes, filling FF increases by 0.05；Double; two 85 condition PID (potential induction attenuation) power attenuations in 96 hours simultaneously only have 1.3%, and within 192 hours, PID decays to 2.8%。
Embodiment 2
1) by original silicon chip pretreatment, this pretreatment includes the techniques such as the making herbs into wool in battery process, diffusion and etching；
2) it is warming up to 550 DEG C after the PECVD device of silicon chip entrance 380 DEG C after etching, first the logical oxygen-containing gas 5min such as oxygen or air in PECVD cavity；It is sequentially depositing the multilamellar SiN that refractive index reduces according to certain rules successively again on polysilicon chip surfacexLayer, wherein bottom SiNxLayer, refractive index is 2.4, and thicknesses of layers is 8nm；Intermediate layer SiNxLayer, refractive index is 2.20, and thicknesses of layers is 15nm；Monolayer SiNxLayer, refractive index is 2.05, and thicknesses of layers is 30nm；Use PECVD device at diffusingsurface plating residue SiOxNyLayer, refractive index is 1.75, and thicknesses of layers is 40nm；
4) use conventional batteries typography printing back electrode, aluminum back surface field, positive grid line and anelectrode, and sinter。
Finding through detection, the photoelectric transformation efficiency of the solar battery sheet that the present embodiment obtains increases and PID resistance has bigger lifting。Concrete data are shown in table 2 below:
The photoelectric transformation efficiency of the solaode that table 2 the present embodiment obtains and PID
As can be seen from Table 1: double-layer reflection reducing coating process efficiency gain 0.18% prepared by the method, mainly due to short-circuit current gain 80 milliamperes, filling FF increases by 0.05；PID (potential induction attenuation) power attenuation in 96 hours simultaneously only has 0.7%, and within 192 hours, PID decays to 2.8%, and battery PID pad value is non-normally low。
Simply the specific embodiment of the present invention described in description above, the flesh and blood of the present invention is not construed as limiting by various illustrations, person of an ordinary skill in the technical field after having read description can to before described detailed description of the invention make an amendment or deform, without departing from the spirit and scope of the invention。
Claims (4)
1. the polycrystalline multilamellar passivated reflection reducing of one kind high PID resistance penetrates film, it is characterised in that: include the bottom SiN set gradually from bottom to top at polysilicon chip substrate front surfacexLayer, intermediate layer SiNxLayer, single or multiple lift optical optimization layer SiNxLayer and top layer optical optimization layer SiOxNyLayer；Described bottom SiNxLayer, intermediate layer SiNxLayer, single or multiple lift optical optimization layer SiNxLayer and top layer optical optimization layer SiOxNyThe refractive index of layer is successively decreased；Described bottom SiNxLayer, intermediate layer SiNxLayer, single or multiple lift optical optimization layer SiNxLayer and top layer optical optimization layer SiOxNyThe total film thickness of layer is 70～135nm, and total refractive index is 1.95～2.20。
2. the polycrystalline multilamellar passivated reflection reducing of high PID resistance as claimed in claim 1 penetrates film, it is characterised in that: described bottom SiNxLayer, intermediate layer SiNxLayer and single or multiple lift optical optimization layer SiNxLayer all adopts PECVD to prepare；Described bottom SiNxThe refractive index of layer is 2.15～2.35, and thickness is 4～15nm；Described intermediate layer SiNxThe refractive index of layer is 2.10～2.30, and thickness is 10～25nm；Described single or multiple lift optical optimization layer SiNxThe refractive index of layer is 1.95～2.25, and thickness is 20～65nm。
3. the polycrystalline multilamellar passivated reflection reducing of high PID resistance as claimed in claim 1 penetrates film, it is characterised in that: described top layer optical optimization layer SiOxNyLayer adopts PECVD by oxygen-containing gas and SiH4、NH3Deposition forms together；Its thickness is 15～60nm, and refractive index is 1.6～1.95。
4. the preparation method that the polycrystalline multilamellar passivated reflection reducing of a high PID resistance as claimed in claim 1 penetrates film, it is characterised in that: comprise the following steps:
1) polysilicon chip common process performs etching after processing；
2) after etching, polysilicon chip, by the PECVD cavity carrier feeding 300 DEG C to 550 DEG C, passes into oxygen-containing gas 3min to 20min；
3) PECVD device plating multilamellar passivated reflection reducing is used to penetrate film；Including the bottom SiN set gradually from bottom to top at polysilicon chip substrate front surfacexLayer, intermediate layer SiNxLayer, single or multiple lift optical optimization layer SiNxLayer and top layer optical optimization layer SiOxNyLayer；
4) use conventional batteries typography printing back electrode, aluminum back surface field, positive grid line and anelectrode, and sinter。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610168721.2A CN105702749B (en) | 2016-03-23 | 2016-03-23 | The polycrystalline multilayer passivated reflection reducing of high PID resistances penetrates film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610168721.2A CN105702749B (en) | 2016-03-23 | 2016-03-23 | The polycrystalline multilayer passivated reflection reducing of high PID resistances penetrates film and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105702749A true CN105702749A (en) | 2016-06-22 |
| CN105702749B CN105702749B (en) | 2018-02-09 |
Family
ID=56231683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610168721.2A Active CN105702749B (en) | 2016-03-23 | 2016-03-23 | The polycrystalline multilayer passivated reflection reducing of high PID resistances penetrates film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105702749B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109888060A (en) * | 2019-03-15 | 2019-06-14 | 通威太阳能（合肥）有限公司 | A kind of solar cell and preparation method thereof with three layers of passivation layer structure |
| WO2023125776A1 (en) * | 2021-12-30 | 2023-07-06 | 天合光能股份有限公司 | Solar cell front passivation film layer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903764A (en) * | 2012-09-27 | 2013-01-30 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Three-layered silicon nitride antireflective film of crystalline silicon solar cell and preparation method thereof |
| CN103794658A (en) * | 2014-01-27 | 2014-05-14 | 镇江大全太阳能有限公司 | Composite membrane efficient crystalline silicon solar cell and manufacturing method of composite membrane efficient crystalline silicon solar cell |
| CN104916710A (en) * | 2015-06-30 | 2015-09-16 | 江苏顺风光电科技有限公司 | High-efficiency polycrystalline multilayer passivation anti-reflection film structure with high PID resistance |
-
2016
- 2016-03-23 CN CN201610168721.2A patent/CN105702749B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903764A (en) * | 2012-09-27 | 2013-01-30 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Three-layered silicon nitride antireflective film of crystalline silicon solar cell and preparation method thereof |
| CN103794658A (en) * | 2014-01-27 | 2014-05-14 | 镇江大全太阳能有限公司 | Composite membrane efficient crystalline silicon solar cell and manufacturing method of composite membrane efficient crystalline silicon solar cell |
| CN104916710A (en) * | 2015-06-30 | 2015-09-16 | 江苏顺风光电科技有限公司 | High-efficiency polycrystalline multilayer passivation anti-reflection film structure with high PID resistance |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109888060A (en) * | 2019-03-15 | 2019-06-14 | 通威太阳能（合肥）有限公司 | A kind of solar cell and preparation method thereof with three layers of passivation layer structure |
| WO2023125776A1 (en) * | 2021-12-30 | 2023-07-06 | 天合光能股份有限公司 | Solar cell front passivation film layer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105702749B (en) | 2018-02-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI438904B (en) | Method for obtaining high performance thin film devices deposited on highly textured substrates | |
| TWI463682B (en) | Heterojunction solar cell having intrinsic amorphous silicon film | |
| Li et al. | Realization of colored multicrystalline silicon solar cells with SiO2/SiNx: H double layer antireflection coatings | |
| CN104916710B (en) | A kind of high-efficiency polycrystalline multilayer passivated reflection reducing of high PID resistances penetrates membrane structure | |
| CN106972066B (en) | A kind of PERC cell backside passivation film and the PERC battery preparation method based on ALD technique | |
| CN103943717B (en) | Method for manufacturing solar cell laminated antireflective film through tubular PECVD | |
| CN104576770A (en) | Passivation and reflection reduction multi-layer film for high-efficiency black crystal silicon battery | |
| CN108091724B (en) | A kind of method and its battery improving PERC cell backside interfacial state | |
| CN108172658B (en) | A kind of preparation method of N-type hetero-junctions double-sided solar battery | |
| CN104752526B (en) | Passivating antireflection film of high PID resistance type polycrystalline cell and preparation process thereof | |
| CN104900722A (en) | Crystalline silicon solar cell with three-layer antireflection film and preparation method thereof | |
| CN102424533A (en) | Difunctional coated glass capable of reducing visible light reflection and reflecting near infrared ray and preparation method thereof | |
| CN110534590A (en) | A kind of silicon nitride film and preparation method thereof improving solar cell long-wave response | |
| CN110444634A (en) | A kind of p-type monocrystalline PERC double-side cell and preparation method thereof | |
| CN105702749B (en) | The polycrystalline multilayer passivated reflection reducing of high PID resistances penetrates film and preparation method thereof | |
| CN207967020U (en) | A kind of N-type hetero-junctions double-sided solar battery structure | |
| CN107068774A (en) | Solar cell reduced passivation resisting film and preparation method thereof and solar battery sheet | |
| CN104576833A (en) | Method adopting PECVD for preparing back passivation film layer of solar back passivation battery | |
| CN204732419U (en) | A kind of high-efficiency polycrystalline multilayer passivated reflection reducing of high PID resistance penetrates membrane structure | |
| CN105826403A (en) | High potential induced degradation (PID) resistance monocrystalline multilayer passivation antireflection film and preparation method thereof | |
| CN215771167U (en) | Solar cell and photovoltaic module | |
| CN105405910A (en) | Heterojunction solar cell, preparation method thereof and solar cell module | |
| CN204441294U (en) | A kind of passivated reflection reducing of high PID resistance single crystal battery penetrates film | |
| CN104362188A (en) | Solar cell with potential induction decay resistance and method for manufacturing solar cell | |
| CN104752527B (en) | Passivation antireflection film of high-PID-resistance single crystal battery and preparation process thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |