CN103633159A - Method for preparing antireflection film of novel solar cell - Google Patents
Method for preparing antireflection film of novel solar cell Download PDFInfo
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- CN103633159A CN103633159A CN201310694002.0A CN201310694002A CN103633159A CN 103633159 A CN103633159 A CN 103633159A CN 201310694002 A CN201310694002 A CN 201310694002A CN 103633159 A CN103633159 A CN 103633159A
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- silicon nitride
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- 238000000034 method Methods 0.000 title abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 87
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 87
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 239000006117 anti-reflective coating Substances 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 238000002360 preparation method Methods 0.000 claims description 16
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000007812 deficiency Effects 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 10
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for preparing an antireflection film of a novel solar cell. Another special gas NOx is introduced and is not required in the current silicon nitride antireflection film, so as to form another film dielectric, break through the lower range of the refractive index of the current silicon nitride antireflection film and expand the lower range of the refractive index to be about 1.8; the method aims at effectively making up for the deficiency of the range of the refractive index of the silicon nitride antireflection film, expanding the variable range of the refractive index of the sunlight antireflection film, reducing reflection of the solar cell to the sunlight, improving the light utilization rate, increasing the electric current of the solar cell and improving the photoelectric conversion efficiency of the solar cell.
Description
Technical field
This patent relates to a kind of preparation method of novel solar battery antireflective coating, belongs to photovoltaic technology field.
Background technology
In recent years, the solar cell of high-efficiency and low-cost is one of study hotspot of photovoltaic industry.At present, people study solar cell from each application, and wherein the most important target of research is to reduce costs, and raise the efficiency, and for improving battery conversion efficiency, must increase the absorption of sunlight, reduce reflection of light.In recent years, the problem of preparing silicon nitride film by PECVD technology and being applied to solar cell more and more causes people's concern.As a kind of important new function material, silicon nitride film is due to its good optical property, can be used as a kind of good reflection-reducing material, to reduce the loss of incident sunlight, improve the efficiency of battery, therefore silicon nitride film is main flow prepared by current solar cell as crystal silicon solar energy battery antireflective passive film, yet due to the silicon nitride film of preparing with PECVD, in SixNyHz mode, express, x wherein, y, the numerical value of z has directly affected the optical property of film and to the passivation in crystal-silicon solar cell surface and body, because its numerical value is for the refractive index of film, extinction coefficient, compactness has direct impact.
The antireflective principle of solar cell antireflective film is at silicon chip surface deposition refractive index certain thickness film between silicon materials and air refraction, thereby the light that makes to incide film surface be refracted into again light through the secondary reflection of base silicon wafer and reach the condition that optical interference disappears mutually and reach antireflecting object, so the most important thing is to make the thickness of film and refractive index to meet antireflecting optical match condition.Sunlight is as the mixed light of a series of different wave lengths, adopting graded index film is a kind of comparatively desirable method that reduces solar cell surface reflection, and the changeable refractive index scope of tubular type PECVD silicon nitride film is generally 2.0-2.4, when the broader ranges of indices of refraction of needs, carrying out the matching optics condition that disappears mutually and further reduce the reflex time of sunlight, there is larger deficiency in pure silicon nitride film.
Summary of the invention
The preparation method who the object of this invention is to provide a kind of novel solar battery antireflective coating, introduce current main flow silicon nitride anti-reflection film and do not need the another kind of special gas N0x using, be intended to effectively make up the deficiency of silicon nitride film ranges of indices of refraction, widen the changeable refractive index scope of sunlight antireflective film, reduce solar cell to sun reflection of light, increase the utilance of light, promote the electric current of battery, thereby promote the photoelectric conversion efficiency of battery.
The present invention solves by the following technical programs:
First, the silicon nitride film that is 2.3-2.5 in silicon chip surface deposition one deck refractive index; Secondly, adjust x in SixNyHz, the different proportionings of y numerical value deposit the silicon nitride film that one deck refractive index is 2.00-2.08 on high silicon nitride film; Then, introduce another kind of gas N0x, form silicon nitride and silica hybrid films, make this tunic refractive index be reduced to 1.75-1.85; At silicon chip surface, form one deck refractive index eventually and from 2.3-2.5, be progressively transitioned into 1.75-1.85, the novel solar battery antireflective coating of medium from silicon nitride to silica transition.
The preferred technical solution of the present invention is as follows:
First, adopt PECVD filming equipment, the NH passing into
3with SiH
4flow-rate ratio is 3-4:1, deposits 150-170 second in plasma atmosphere, at silicon chip surface, forms one deck refractive index 2.3-2.5, the silicon nitride film of thickness 17-20nm; Afterwards, the NH passing into
3with SiH
4flow-rate ratio is 10.44-10.48:1, deposits 380-410 second in plasma atmosphere, and on ground floor silicon nitride film, continuing to deposit second layer refractive index is 2.00-2.08, the silicon nitride film of thickness 40-45nm; Again, introduce another kind of gas N0x, substitute NH
3, the N0x passing into and SiH
4flow-rate ratio is 20-30:1, in plasma atmosphere, deposit 120-150 time second, in second layer silicon nitride surface, deposit one deck refractive index 1.75-1.85, the silicon nitride of thickness 20-25nm and silica mixing antireflective coating, finally at silicon chip surface, forming one deck total film thickness is 77-90nm, refractive index is progressively transitioned into 1.75-1.85 from 2.3-2.5, composite refractive index 1.99-2.04, the novel solar battery antireflective coating of medium from silicon nitride to silica transition.
Feature of the present invention and progressive being mainly reflected in:
(1) introduce current main flow silicon nitride anti-reflection film and do not need the another kind of special gas N0x using;
(2) form another kind of film medium, break current silicon nitride anti-reflecting film refractive index lower range, make ranges of indices of refraction lower limit widen 1.8 left and right;
(3) this preparation method equipment needed thereby is still current main flow tube-type film coating equipment, only needs to increase the special air pipe in a road and introduces special gas N0x, without dropping into a large amount of equipment costs.
Specific embodiments
Embodiment 1:
A preparation method for novel solar battery antireflective coating, first, adopts PECVD filming equipment, the NH passing into
3with SiH
4flow-rate ratio is 3:1, deposits 150 seconds in plasma atmosphere, at silicon chip surface, forms one deck refractive index 2.3, the silicon nitride film of thickness 17nm; Afterwards, the NH passing into
3with SiH
4flow-rate ratio is 10.44:1, deposits 380 seconds in plasma atmosphere, and on ground floor silicon nitride film, continuing to deposit second layer refractive index is 2.00, the silicon nitride film of thickness 40nm; Again, introduce another kind of gas N0x, substitute NH
3, the N0x passing into and SiH
4flow-rate ratio is 20:1, in plasma atmosphere, deposit 120 second time, in second layer silicon nitride surface, deposit one deck refractive index 1.75, the silicon nitride of thickness 20nm and silica mixing antireflective coating, finally at silicon chip surface, forming one deck total film thickness is 77nm, refractive index is progressively transitioned into 1.75, composite refractive index 1.99-2.04, the novel solar battery antireflective coating of medium from silicon nitride to silica transition from 2.3.
Embodiment 2:
A preparation method for novel solar battery antireflective coating, first, adopts PECVD filming equipment, the NH passing into
3with SiH
4flow-rate ratio is 3.5:1, deposits 160 seconds in plasma atmosphere, at silicon chip surface, forms one deck refractive index 2.4, the silicon nitride film of thickness 18nm; Afterwards, the NH passing into
3with SiH
4flow-rate ratio is 10.46:1, deposits 400 seconds in plasma atmosphere, and on ground floor silicon nitride film, continuing to deposit second layer refractive index is 2.04, the silicon nitride film of thickness 42nm; Again, introduce another kind of gas N0x, substitute NH
3, the N0x passing into and SiH
4flow-rate ratio is 25:1, in plasma atmosphere, deposit 135 second time, in second layer silicon nitride surface, deposit one deck refractive index 1.80, the silicon nitride of thickness 23nm and silica mixing antireflective coating, finally at silicon chip surface, forming one deck total film thickness is 83nm, refractive index is progressively transitioned into 1.80, composite refractive index 1.99-2.04, the novel solar battery antireflective coating of medium from silicon nitride to silica transition from 2.5.
Embodiment 3:
A preparation method for novel solar battery antireflective coating, first, adopts PECVD filming equipment, the NH passing into
3with SiH
4flow-rate ratio is 4:1, deposits 170 seconds in plasma atmosphere, at silicon chip surface, forms one deck refractive index 2.5, the silicon nitride film of thickness 20nm; Afterwards, the NH passing into
3with SiH
4flow-rate ratio is 10.44-10.48:1, deposits 410 seconds in plasma atmosphere, and on ground floor silicon nitride film, continuing to deposit second layer refractive index is 2.08, the silicon nitride film of thickness 45nm; Again, introduce another kind of gas N0x, substitute NH
3, the N0x passing into and SiH
4flow-rate ratio is 30:1, in plasma atmosphere, deposit 150 second time, in second layer silicon nitride surface, deposit one deck refractive index 1.85, the silicon nitride of thickness 25nm and silica mixing antireflective coating, finally at silicon chip surface, forming one deck total film thickness is 90nm, refractive index is progressively transitioned into 1.85, composite refractive index 1.99-2.04, the novel solar battery antireflective coating of medium from silicon nitride to silica transition from 2.5.
Embodiment 4:
A preparation method for novel solar battery antireflective coating, first, adopts PECVD filming equipment, passes into NH
3with SiH
4flow-rate ratio is the gas of 3.7:1, deposits 155 seconds in plasma atmosphere, at silicon chip surface, forms one deck refractive index 2.35, the silicon nitride film of thickness 19nm; Afterwards, the NH passing into
3with SiH
4flow-rate ratio is 10.45:1, deposits 390 seconds in plasma atmosphere, and on ground floor silicon nitride film, continuing to deposit second layer refractive index is 2.02, the silicon nitride film of thickness 41nm; Again, introduce another kind of gas N0x, substitute NH
3, the N0x passing into and SiH
4flow-rate ratio is 24:1, in plasma atmosphere, deposit 125 second time, in second layer silicon nitride surface, deposit one deck refractive index 1.78, the silicon nitride of thickness 24nm and silica mixing antireflective coating, finally at silicon chip surface, forming one deck total film thickness is 84nm, refractive index is progressively transitioned into 1.78, composite refractive index 1.99-2.04, the novel solar battery antireflective coating of medium from silicon nitride to silica transition from 2.35.
Embodiment 5:
A preparation method for novel solar battery antireflective coating, first, adopts PECVD filming equipment, passes into NH
3with SiH
4flow-rate ratio is the gas of 3.2:1, deposits 165 seconds in plasma atmosphere, at silicon chip surface, forms one deck refractive index 2.45, the silicon nitride film of thickness 18nm; Afterwards, the NH passing into
3with SiH
4flow-rate ratio is 10.47:1, deposits 395 seconds in plasma atmosphere, and on ground floor silicon nitride film, continuing to deposit second layer refractive index is 2.07, the silicon nitride film of thickness 44nm; Again, introduce another kind of gas N0x, substitute NH
3, the N0x passing into and SiH
4flow-rate ratio is 27:1, in plasma atmosphere, deposit 145 second time, in second layer silicon nitride surface, deposit one deck refractive index 1.83, the silicon nitride of thickness 22nm and silica mixing antireflective coating, finally at silicon chip surface, forming one deck total film thickness is 84nm, refractive index is progressively transitioned into 1.83, composite refractive index 1.99-2.04, the novel solar battery antireflective coating of medium from silicon nitride to silica transition from 2.45.
Control group 1:
The preparation method of conventional silicon nitride anti-reflection film, first, adopts PECVD filming equipment, the NH passing into
3with SiH
4flow-rate ratio is 3:1, deposits 150 seconds in plasma atmosphere, at silicon chip surface, forms one deck refractive index 2.3, the silicon nitride film of thickness 17nm; Afterwards, the NH passing into
3with SiH
4flow-rate ratio is 10.44:1, deposits 380 seconds in plasma atmosphere, and on ground floor silicon nitride film, continuing to deposit second layer refractive index is 2.00, the silicon nitride film of thickness 40nm.
Control group 2:
The preparation method of conventional silicon nitride anti-reflection film, first, adopts PECVD filming equipment, the NH passing into
3with SiH
4flow-rate ratio is 3.5:1, deposits 160 seconds in plasma atmosphere, at silicon chip surface, forms one deck refractive index 2.4, the silicon nitride film of thickness 18nm; Afterwards, the NH passing into
3with SiH
4flow-rate ratio is 10.46:1, deposits 400 seconds in plasma atmosphere, and on ground floor silicon nitride film, continuing to deposit second layer refractive index is 2.04, the silicon nitride film of thickness 42nm.
Control group 3:
The preparation method of conventional silicon nitride anti-reflection film, first, adopts PECVD filming equipment, the NH passing into
3with SiH
4flow-rate ratio is 4:1, deposits 170 seconds in plasma atmosphere, at silicon chip surface, forms one deck refractive index 2.5, the silicon nitride film of thickness 20nm; Afterwards, the NH passing into
3with SiH
4flow-rate ratio is 10.44-10.48:1, deposits 410 seconds in plasma atmosphere, and on ground floor silicon nitride film, continuing to deposit second layer refractive index is 2.08, the silicon nitride film of thickness 45nm.
Control group 4:
The preparation method of conventional silicon nitride anti-reflection film, first, adopts PECVD filming equipment, passes into NH
3with SiH
4flow-rate ratio is the gas of 3.7:1, deposits 155 seconds in plasma atmosphere, at silicon chip surface, forms one deck refractive index 2.35, the silicon nitride film of thickness 19nm; Afterwards, the NH passing into
3with SiH
4flow-rate ratio is 10.45:1, deposits 390 seconds in plasma atmosphere, and on ground floor silicon nitride film, continuing to deposit second layer refractive index is 2.02, the silicon nitride film of thickness 41nm.
Control group 5:
The preparation method of conventional silicon nitride anti-reflection film, first, adopts PECVD filming equipment, passes into NH
3with SiH
4flow-rate ratio is the gas of 3.2:1, deposits 165 seconds in plasma atmosphere, at silicon chip surface, forms one deck refractive index 2.45, the silicon nitride film of thickness 18nm; Afterwards, the NH passing into
3with SiH
4flow-rate ratio is 10.47:1, deposits 395 seconds in plasma atmosphere, and on ground floor silicon nitride film, continuing to deposit second layer refractive index is 2.07, the silicon nitride film of thickness 44nm.
Such scheme is carried out to experiment show, and multiple authentication data result sees the following form:
Conclusion: (1), through verifying that novel antireflective coating of the present invention can again reduce sun reflection of light on conventional silicon nitride anti-reflection film basis in batches, the reflectivity range of decrease can reach 10-30% compared with the pure silicon nitride film of main flow, the average range of decrease 21.55%;
(2) the novel antireflective coating of the present invention reduces sun reflection of light, increases photo-generated carrier, improves the about 40mA of solar cell short circuit current Isc, thereby promotes cell photoelectric conversion efficiency approximately 0.09%.
Claims (2)
1. a preparation method for novel solar battery antireflective coating, is characterized by:
First, the silicon nitride film that is 2.3-2.5 in silicon chip surface deposition one deck refractive index; Secondly, adjust x in SixNyHz, the different proportionings of y numerical value deposit the silicon nitride film that one deck refractive index is 2.00-2.08 on high silicon nitride film; Then, introduce another kind of gas N0x, form silicon nitride and silica hybrid films, make this tunic refractive index be reduced to 1.75-1.85; At silicon chip surface, form one deck refractive index eventually and from 2.3-2.5, be progressively transitioned into 1.75-1.85, the novel solar battery antireflective coating of medium from silicon nitride to silica transition.
2. a preparation method for novel solar battery antireflective coating, is characterized by:
First, adopt PECVD filming equipment, the NH passing into
3with SiH
4flow-rate ratio is 3-4:1, deposits 150-170 second in plasma atmosphere, at silicon chip surface, forms one deck refractive index 2.3-2.5, the silicon nitride film of thickness 17-20nm; Afterwards, the NH passing into
3with SiH
4flow-rate ratio is 10.44-10.48:1, deposits 380-410 second in plasma atmosphere, and on ground floor silicon nitride film, continuing to deposit second layer refractive index is 2.00-2.08, the silicon nitride film of thickness 40-45nm; Again, introduce another kind of gas N0x, substitute NH
3, the N0x passing into and SiH
4flow-rate ratio is 20-30:1, in plasma atmosphere, deposit 120-150 time second, in second layer silicon nitride surface, deposit one deck refractive index 1.75-1.85, the silicon nitride of thickness 20-25nm and silica mixing antireflective coating, finally at silicon chip surface, forming one deck total film thickness is 77-90nm, refractive index is progressively transitioned into 1.75-1.85 from 2.3-2.5, composite refractive index 1.99-2.04, the novel solar battery antireflective coating of medium from silicon nitride to silica transition.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304740A (en) * | 2015-10-12 | 2016-02-03 | 友达光电股份有限公司 | Photovoltaic conversion module |
| CN105322031A (en) * | 2015-10-08 | 2016-02-10 | 无锡尚德太阳能电力有限公司 | Mixed multilayer film structure of solar cell |
| CN106282965A (en) * | 2016-08-31 | 2017-01-04 | 东方日升新能源股份有限公司 | The plasma reinforced chemical vapour deposition method of silicon chip of solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE4110256A1 (en) * | 1991-03-28 | 1992-10-01 | Telefunken Systemtechnik | Semiconductor basic body for solar cell - has high ohmic emitter, applied covering layer and light-sensitive top surface having several laser-produced notches with second low ohmic emitter diffused only into notch area |
| CN102339872B (en) * | 2011-09-28 | 2013-06-05 | 湖南红太阳新能源科技有限公司 | Multilayer silicon nitride antireflection film of crystalline silicon solar cell and preparation method of multilayer silicon nitride antireflection film |
| CN103296094A (en) * | 2013-05-22 | 2013-09-11 | 吴江市德佐日用化学品有限公司 | Polycrystalline silicon solar cell antireflection film and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322031A (en) * | 2015-10-08 | 2016-02-10 | 无锡尚德太阳能电力有限公司 | Mixed multilayer film structure of solar cell |
| CN105304740A (en) * | 2015-10-12 | 2016-02-03 | 友达光电股份有限公司 | Photovoltaic conversion module |
| CN106282965A (en) * | 2016-08-31 | 2017-01-04 | 东方日升新能源股份有限公司 | The plasma reinforced chemical vapour deposition method of silicon chip of solar cell |
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