CN103000705A - Crystalline silicon solar cell antireflection film - Google Patents
Crystalline silicon solar cell antireflection film Download PDFInfo
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- CN103000705A CN103000705A CN 201210401694 CN201210401694A CN103000705A CN 103000705 A CN103000705 A CN 103000705A CN 201210401694 CN201210401694 CN 201210401694 CN 201210401694 A CN201210401694 A CN 201210401694A CN 103000705 A CN103000705 A CN 103000705A
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Abstract
The invention discloses a crystalline silicon solar cell antireflection film which is characterized by comprising a silicon oxynitride film, a titanium dioxide film, a silicon nitride film and a silicon dioxide film sequentially deposited on the surface of a silicon wafer. The refractive index of the four films gradually decreases from the silicon oxynitride film to the silicon dioxide film, and the thickness of the four films gradually increases from the silicon oxynitride film to the silicon dioxide film. The titanium dioxide film has high chemical stability to most chemical substances during production of cells and is high in refractive index and low in absorption rate, the silicon nitride film has good passivating effect on the silicon wafer, the silicon dioxide film has high damage threshold and excellent optical performance, and the silicon oxynitride film has excellent characteristics of silicon nitride and silicon oxide. Consequently, the crystalline silicon solar cell antireflection film can well improve optical conversion efficiency.
Description
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Technical field
The present invention relates to a kind of antireflective coating structure of solar cell, especially laminated antireflection film structure, specifically a kind of crystal silicon solar energy battery antireflective coating.
Background technology
Solar cell is the device that solar energy is changed into electric energy, and the conversion efficiency of solar battery sheet is commonly defined as the ratio of power output with the sunlight gross power that incides the cell piece surface of cell piece.It is that reflection and refraction can occur that solar irradiation is mapped to the cell piece surface, for improving the conversion efficiency of cell piece, then will reduce reflection loss as far as possible.The making of antireflective coating directly affects solar cell to the reflectivity of incident light, and the raising of solar battery efficiency is played very important effect.
At present in the large-scale production of crystal silicon solar energy battery main with the PEVCD method plate individual layer or double-layer silicon nitride film, silicon dioxide film, titanium dioxide film or wherein the combination of two kinds of films reduce the reflection loss of solar cell surface, increase the passivation effect of solar cell, thereby improve the photoelectric conversion efficiency of crystal silicon solar energy battery.But existing individual layer or duplicature, although can play preferably passivation and anti-reflective effect, but its reflectivity is still very high, the reflectivity of monofilm is at 6.5%-7%, the reflectivity of duplicature is at 5.8%-6.1%, still have more reflection loss, the photoelectric conversion efficiency of crystal silicon solar energy battery is still very low.
Summary of the invention
The object of the invention is to for the above-mentioned problems in the prior art, to reflection of light, improve the crystal silicon solar energy battery four antireflection film of the photoelectric conversion efficiency of solar cell by a kind of reduction battery surface.
Purpose of the present invention can be achieved through the following technical solutions:
A kind of crystal silicon solar energy battery antireflective coating is characterized in that being included in silicon chip surface and deposits successively silicon oxynitride rete, titanium oxide film layer, silicon nitride film layer and silica coating.
The thickness of described silicon oxynitride rete is 5-12nm, and refractive index is 2.16-2.35.
The thickness of described silicon oxynitride rete is 8nm.
The thickness of described titanium oxide film layer is 15-20nm, and refractive index is 1.96-2.08.
The thickness of described titanium oxide film layer is 18nm.
The thickness of described silicon nitride film layer is 25-35nm, and refractive index is 1.78-1.92nm.
The thickness of described silicon nitride film layer is 30nm.
The thickness of described silica coating is 40-50nm, and refractive index is 1.44-1.55.
The thickness of described silica coating is 45nm.
The refractive index of described four retes reduces to silica coating successively from the silicon oxynitride rete, and the thickness of described four retes increases to silica coating successively from the silicon oxynitride rete.
Beneficial effect of the present invention: antireflective coating provided by the invention, comprise the silicon oxynitride rete that is deposited on successively on the silicon chip, titanium oxide film layer, silicon nitride film layer and silica coating, wherein titanium oxide film layer has good chemical stability to the most of chemical substances in the cell piece production process, its refractive index is high and absorptivity is low, silicon nitride film layer has good passivation effect to silicon chip, silica coating has high damage threshold and good optical property, silicon oxynitride has the good characteristic of silicon nitride and silica, therefore, can improve well optical conversion efficiencies.
Description of drawings
Fig. 1 is structural representation of the present invention.
Among the figure: 1, silicon chip, 2, the silicon oxynitride rete, 3, titanium oxide film layer, 4, silicon nitride film layer, 5, silica coating.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments.
As shown in Figure 1.A kind of crystal silicon solar energy battery antireflective coating deposits silicon oxynitride rete 2, titanium oxide film layer 3, silicon nitride film layer 4 and silica coating 5 successively on silicon chip of solar cell 1 surface.The thickness of the silicon oxynitride rete 2 that the present invention uses is 8nm, and refractive index is 2.16; The thickness of titanium oxide film layer 3 is 18nm, and refractive index is 2.02; The thickness of silicon nitride film layer 4 is 30nm, and refractive index is 1.85; The thickness of silica coating 5 is 45nm, and refractive index is 1.48.
Claims (10)
1. a crystal silicon solar energy battery antireflective coating is characterized in that being included in silicon chip surface and deposits successively silicon oxynitride rete, titanium oxide film layer, silicon nitride film layer and silica coating.
2. crystal silicon solar energy battery antireflective coating according to claim 1, the thickness that it is characterized in that described silicon oxynitride rete is 5-12nm, refractive index is 2.16-2.35.
3. crystal silicon solar energy battery antireflective coating according to claim 2, the thickness that it is characterized in that described silicon oxynitride rete is 8nm.
4. crystal silicon solar energy battery antireflective coating according to claim 1, the thickness that it is characterized in that described titanium oxide film layer is 15-20nm, refractive index is 1.96-2.08.
5. crystal silicon solar energy battery antireflective coating according to claim 4, the thickness that it is characterized in that described titanium oxide film layer is 18nm.
6. crystal silicon solar energy battery antireflective coating according to claim 1, the thickness that it is characterized in that described silicon nitride film layer is 25-35nm, refractive index is 1.78-1.92nm.
7. crystal silicon solar energy battery antireflective coating according to claim 6, the thickness that it is characterized in that described silicon nitride film layer is 30nm.
8. crystal silicon solar energy battery antireflective coating according to claim 1, the thickness that it is characterized in that described silica coating is 40-50nm, refractive index is 1.44-1.55.
9. crystal silicon solar energy battery antireflective coating according to claim 1, the thickness that it is characterized in that described silica coating is 45nm.
10. crystal silicon solar energy battery antireflective coating according to claim 1, the refractive index that it is characterized in that described four retes reduces to silica coating successively from the silicon oxynitride rete, and the thickness of described four retes increases to silica coating successively from the silicon oxynitride rete.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210401694 CN103000705A (en) | 2012-10-22 | 2012-10-22 | Crystalline silicon solar cell antireflection film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210401694 CN103000705A (en) | 2012-10-22 | 2012-10-22 | Crystalline silicon solar cell antireflection film |
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| CN103000705A true CN103000705A (en) | 2013-03-27 |
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| CN 201210401694 Pending CN103000705A (en) | 2012-10-22 | 2012-10-22 | Crystalline silicon solar cell antireflection film |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097962A (en) * | 2015-08-31 | 2015-11-25 | 无锡市嘉邦电力管道厂 | Solar cell anti-reflection film and preparation method thereof |
| CN107331712A (en) * | 2017-06-27 | 2017-11-07 | 过春明 | A kind of solar cell anti-reflection film |
| CN111416022A (en) * | 2020-04-09 | 2020-07-14 | 浙江爱旭太阳能科技有限公司 | Preparation method for preparing black component solar cell positive film |
-
2012
- 2012-10-22 CN CN 201210401694 patent/CN103000705A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097962A (en) * | 2015-08-31 | 2015-11-25 | 无锡市嘉邦电力管道厂 | Solar cell anti-reflection film and preparation method thereof |
| CN107331712A (en) * | 2017-06-27 | 2017-11-07 | 过春明 | A kind of solar cell anti-reflection film |
| CN111416022A (en) * | 2020-04-09 | 2020-07-14 | 浙江爱旭太阳能科技有限公司 | Preparation method for preparing black component solar cell positive film |
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Application publication date: 20130327 |