CN106409926A - Multilayer passivation film of crystalline-silicon battery and manufacturing method thereof - Google Patents
Multilayer passivation film of crystalline-silicon battery and manufacturing method thereof Download PDFInfo
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- 238000002161 passivation Methods 0.000 title abstract description 11
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 41
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 19
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 18
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 11
- 229910000077 silane Inorganic materials 0.000 claims description 11
- 230000002085 persistent effect Effects 0.000 claims description 10
- 235000013842 nitrous oxide Nutrition 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- DUFGEJIQSSMEIU-UHFFFAOYSA-N [N].[Si]=O Chemical compound [N].[Si]=O DUFGEJIQSSMEIU-UHFFFAOYSA-N 0.000 claims 1
- 239000000969 carrier Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 97
- 239000010409 thin film Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 229910003978 SiClx Inorganic materials 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 2
- 241000720974 Protium Species 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- -1 silicon Alkane Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a multilayer passivation film of a crystalline-silicon battery and a manufacturing method thereof. The multilayer passivation film comprises a first silicon oxide film, a silicon nitride film, a second silicon oxide film and a silicon oxynitride film. The silicon nitride film is deposited on the first silicon oxide film; the second silicon oxide film is deposited on the silicon nitride film; and the silicon oxynitride film is deposited on the second silicon oxide film. The thickness of the first silicon oxide film is 5 to 9 nm, the thickness of the silicon nitride film is 60 to 90 nm, the thickness of the second silicon oxide film is 10 to 20nm, and the thickness of the silicon oxynitride film is 15 to 30nm. According to the invention, the probability of total reflection of light is improved substantially and thus more light enters a silicon wafer to generate more carriers, so that the battery efficiency is enhanced.
Description
Technical field
The present invention relates to the technical field of solaode, more particularly to a kind of crystal silicon battery multilamellar passivating film and its system
Make method.
Background technology
At present, increase light frequently with the mode in silicon chip surface depositing antireflection film in solaode large-scale production
Utilization rate, lifted battery conversion efficiency.Common thin film mainly has silicon nitride SiNx and silicon oxide sio x, and two kinds of thin film have
Different characteristics and preparation method.It is prepared by the way of the many depositions using PECVD of silicon nitride SiNx thin film, there is antireflective
Can and body good passivation effect, depositing temperature low, the features such as production capacity is high, but silicon nitride film is high with silicon substrate combination interface state and delustring
Characteristic also limit the lifting further of cell conversion efficiency.It is compared to SiNx, silicon oxide sio x thin film has lower boundary
Face state, lower refractive index are it is provided that good surface passivation effect, but adopt high-temperature thermal oxidation method its preparation method more
Grown, silicon chip is damaged larger, and flow process complexity is relatively costly, is unfavorable for large-scale production.
In addition, the anti-PID characteristic of conventional batteries piece is improved by the refractive index increasing SiNx thin film, the method can be brought
A certain degree of loss in efficiency, and in layer deposition SiOx thin film, it is not result in that efficiency drops while improving anti-PID characteristic
Low.
Content of the invention
Goal of the invention：It is an object of the invention to provide a kind of crystal silicon battery multilamellar passivating film and preparation method thereof.
Technical scheme：For achieving the above object, the invention provides a kind of crystal silicon battery multilamellar passivating film, including the first oxygen
SiClx film, silicon nitride film, the second silicon oxide film and silicon oxynitride film；Silicon nitride film deposition is on the first silicon oxide film；Second
Silicon oxide film is deposited on silicon nitride film, and silicon oxynitride film is deposited on the second silicon oxide film；First silicon oxide film thickness is 5-
9nm, silicon nitride film thickness is 60-90nm, and the thickness of the second silicon oxide film is 10-20nm, and the thickness of silicon oxynitride film is spent for 15-
30nm.
Operation principle：Crystal silicon battery multilamellar passivating film of the present invention improves battery effect by passivation and antireflective two aspect
Rate.Passivation is to reduce silicon chip surface and internal defect, and in order to reduce the introducing of additional energy, the few son of minimizing is compound, improves less
In the sub- life-span, improve battery efficiency；Antireflective is the reflection reducing light by the principle of interference of thin film, and silicon chip can be made to absorb more
Many light, more light will produce more photo-generated carriers, improves battery efficiency.
Preferably, the first silicon oxide film thickness is 6-8nm, the thickness of silicon nitride film is 70-80nm, the second silicon oxide film
Thickness be 12-18nm, the thickness of silicon oxynitride film is 20-25nm.
Preferably, the refractive index of the first silicon oxide film is 1.2-1.5, the refractive index of silicon nitride film is 2.0-2.2, second
The refractive index of silicon oxide film is 1.2-1.5, and the refractive index of silicon oxynitride film is 1.7-1.8.
The preparation method of above-mentioned crystal silicon battery multilamellar passivating film, including following steps connected in order：
A, the first silicon oxide film is made using thermal oxidation method or PECVD；
B, using PECVD, silicon nitride film is made on ground floor silicon oxide film；
C, using PECVD, the second silicon oxide film is made on silicon nitride film；
D, silicon oxynitride film is made on the second silicon oxide film, to complete crystal silicon battery multilamellar passivating film using PECVD
Making.
Preferably, in step A, the first silicon oxide film is made using PECVD, process conditions are：Temperature 350-380
DEG C, laughing gas flow 3-7L/min, silane flow rate 2-4L/min, pressure 2-2.5Torr, radio-frequency power 5-7kW, persistent period 5-
12s.
Preferably, in step B, the process conditions of silicon nitride film are：Temperature 420-550 DEG C, nitrogen flow 20-35L/
Min, ammonia flow 0.6-1.2L/min, silane flow rate 2.5-4L/min, pressure 2-2.5Torr, radio-frequency power 8-10kW, continue
Time 35-55s.
Preferably, in step C, the process conditions of the second silicon oxide film are：Temperature 350-380 DEG C, laughing gas flow 3-7L/
Min, silane flow rate 2-4L/min, pressure 2-2.5Torr, radio-frequency power 5-7kW, persistent period 20-40s.
Preferably, in step D, the process conditions of silicon oxynitride film are：Temperature 400-480 DEG C, nitrogen flow 18-35L/
Min, laughing gas flow 3-7L/min, silane flow rate 2-4L/min, pressure 2-2.5Torr, radio-frequency power 5-7kW, persistent period 20-
40s.
Beneficial effect：In crystal silicon battery multilamellar passivating film of the present invention, ground floor silicon oxide film replaces traditional high index of refraction nitrogen
SiClx film, its oxide film is effectively reduced the silicon chip surface density of states, lifts short wave response, reduces recombination-rate surface；
The relative dielectric constant of its silica membrane is lower, and insulating properties are good, and anti-PID effect is good；Its three silicon oxide films refractive index
Lower, translucidus are more preferable.In the present invention, second layer silicon nitride film is rich in fixed positive charge and protium it is provided that effective field
Passivation and body passivation.Third layer silicon oxide film in the present invention, one translucidus are good, and it two is superimposed with second layer silicon nitride film, by
It is far below second layer silicon nitride film in its refractive index, therefore light occurs the probability of total reflection will improve a lot, that is, have more
Light enters in silicon chip, can produce more carriers, improves battery efficiency.
Brief description
Fig. 1 is the crystal silicon battery multilamellar passivation film structure schematic diagram of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawings and specific embodiment, it is further elucidated with the present invention, the present embodiment is with technical solution of the present invention
Premised under implemented it should be understood that these embodiments are only illustrative of the invention and is not intended to limit the scope of the invention.
A kind of crystal silicon battery multilamellar passivating film as shown in Figure 1, described crystal silicon battery multilamellar passivating film is formed at p-type crystal silicon
On battery 1, it includes the first silicon oxide film 2, silicon nitride film 3, the second silicon oxide film 4 and silicon oxynitride film 5；Silicon nitride 3 film
It is deposited on the first silicon oxide film 2；Second silicon oxide film 4 is deposited on silicon nitride film 3, and silicon oxynitride film 5 is deposited on the second oxygen
On SiClx film 4；First silicon oxide film 2 thickness is 5-9nm, and silicon nitride film 3 thickness is 60-90nm, the thickness of the second silicon oxide film 4
For 10-20nm, the thickness of silicon oxynitride film 5 is 15-30nm.Wherein, preferably, the first silicon oxide film 2 thickness is 6-8nm,
The thickness of silicon nitride film 3 is 70-80nm, and the thickness of the second silicon oxide film 4 is 12-18nm, and the thickness of silicon oxynitride film 5 is 20-
25nm, the refractive index of the first silicon oxide film 2 is 1.2-1.5, and the refractive index of silicon nitride film 3 is 2.0-2.2, the second silicon oxide film 4
Refractive index be 1.2-1.5, the refractive index of silicon oxynitride film 5 is 1.7-1.8.
Its manufacture method is as follows：P-type crystal silicon battery 1 is sequentially passed through following normal process steps：Once clean, spread and secondary
Cleaning, makes ground floor silicon oxide film using PECVD, and process conditions are：First silicon oxide film is made using PECVD, work
Skill condition is：Temperature 350-380 DEG C, laughing gas flow 3-7L/min, silane flow rate 2-4L/min, pressure 2-2.5Torr, radio frequency work(
Rate 5-7kW, persistent period 5-12s, obtaining thickness is 6-8nm, and refractive index is first silicon oxide film 2 of 1.2-1.5；Then use
PECVD makes second layer silicon nitride film 3 on the first silicon oxide film 2, and process conditions are：Temperature 420-550 DEG C, nitrogen flow
20-35L/min, ammonia flow 0.6-1.2L/min, silane flow rate 2.5-4L/min, pressure 2-2.5Torr, radio-frequency power 8-
10kW, persistent period 35-55s, obtain for 70-80nm, and refractive index is the silicon nitride film 3 of 2.0-2.2, reuses PECVD and exists
Silicon nitride film 3 makes third layer the second silicon oxide film 4, and process conditions are：Temperature 350-380 DEG C, laughing gas flow 3-7L/min, silicon
Alkane flow 2-4L/min, pressure 2-2.5Torr, radio-frequency power 5-7kW, persistent period 20-40s, obtaining thickness is 12-18nm,
Refractive index is second silicon oxide film 4 of 1.2-1.5, reuses PECVD and makes the 4th layer of silicon oxynitride in the second silicon oxide film 4
Film 4, process conditions are：Temperature 400-480 DEG C, nitrogen flow 18-35L/min, laughing gas flow 3-7L/min, silane flow rate 2-
4L/min, pressure 2-2.5Torr, radio-frequency power 5-7kW, persistent period 20-40s, obtaining thickness is 20-25nm, and refractive index is
1.7-1.8 silicon oxynitride film 4.
In crystal silicon battery multilamellar passivating film of the present invention, ground floor silicon oxide film replaces traditional high index of refraction silicon nitride film, its
Oxide film is effectively reduced the silicon chip surface density of states, lifts short wave response, reduces recombination-rate surface；Its silicon dioxide
The relative dielectric constant of thin film is lower, and insulating properties are good, and anti-PID effect is good；Its three silicon oxide films refractive index is lower, translucidus
More preferably.In the present invention, second layer silicon nitride film is rich in fixed positive charge and protium it is provided that the passivation of effective field and body are blunt
Change.Third layer silicon oxide film in the present invention, one translucidus are good, and it two is superimposed with second layer silicon nitride film, due to its refractive index
Far below second layer silicon nitride film, therefore light occurs the probability of total reflection will improve a lot, that is, have more light to enter silicon
In piece, more carriers can be produced, improve battery efficiency.
The above is the preferred embodiment of the present invention it is noted that for those skilled in the art
For, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (8)
1. a kind of crystal silicon battery multilamellar passivating film it is characterised in that：Including the first silicon oxide film, silicon nitride film, the second silicon oxide
Film and silicon oxynitride film；Silicon nitride film deposition is on the first silicon oxide film；Second silicon oxide film is deposited on silicon nitride film, nitrogen
Silicon oxide film is deposited on the second silicon oxide film；First silicon oxide film thickness is 5-9nm, and silicon nitride film thickness is 60-90nm, the
The thickness of silicon dioxide film is 10-20nm, and the thickness of silicon oxynitride film is 15-30nm.
2. crystal silicon battery surface passivated membrane as claimed in claim 1 it is characterised in that：First silicon oxide film thickness is 6-8nm,
The thickness of silicon nitride film is 70-80nm, and the thickness of the second silicon oxide film is 12-18nm, and the thickness of silicon oxynitride film is 20-
25nm.
3. crystal silicon battery multilamellar passivating film as claimed in claim 1 or 2 it is characterised in that：The refractive index of the first silicon oxide film
For 1.2-1.5, the refractive index of silicon nitride film is 2.0-2.2, and the refractive index of the second silicon oxide film is 1.2-1.5, silicon oxynitride film
Refractive index be 1.7-1.8.
4. the crystal silicon battery multilamellar passivating film described in claim 1-4 any one preparation method it is characterised in that：Including suitable
The following steps that sequence connects：
A, the first silicon oxide film is made using thermal oxidation method or PECVD；
B, using PECVD, silicon nitride film is made on ground floor silicon oxide film；
C, using PECVD, the second silicon oxide film is made on silicon nitride film；
D, make silicon oxynitride film on the second silicon oxide film, to complete the system of crystal silicon battery multilamellar passivating film using PECVD
Make.
5. method as claimed in claim 4 it is characterised in that：In step A, the first silicon oxide film is made using PECVD, work
Skill condition is：Temperature 350-380 DEG C, laughing gas flow 3-7L/min, silane flow rate 2-4L/min, pressure 2-2.5Torr, radio frequency work(
Rate 5-7kW, persistent period 5-12s.
6. the method as described in claim 4 or 5 it is characterised in that：In step B, the process conditions of silicon nitride film are：Temperature
420-550 DEG C, nitrogen flow 20-35L/min, ammonia flow 0.6-1.2L/min, silane flow rate 2.5-4L/min, pressure 2-
2.5Torr, radio-frequency power 8-10kW, persistent period 35-55s.
7. the method as described in claim 4 or 5 it is characterised in that：In step C, the process conditions of the second silicon oxide film are：Temperature
350-380 DEG C of degree, laughing gas flow 3-7L/min, silane flow rate 2-4L/min, pressure 2-2.5Torr, radio-frequency power 5-7kW, hold
Continuous time 20-40s.
8. the method as described in claim 4 or 5 it is characterised in that：In step D, the process conditions of silicon oxynitride film are：Temperature
400-480 DEG C, nitrogen flow 18-35L/min, laughing gas flow 3-7L/min, silane flow rate 2-4L/min, pressure 2-2.5Torr,
Radio-frequency power 5-7kW, persistent period 20-40s.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107658358A (en) * | 2017-09-21 | 2018-02-02 | 东方环晟光伏（江苏）有限公司 | Solar battery back passivation film structure and its generation method |
| CN110212071A (en) * | 2019-05-22 | 2019-09-06 | 华灿光电（浙江）有限公司 | Light-emitting diode chip for backlight unit and preparation method thereof |
| CN112349813A (en) * | 2020-11-05 | 2021-02-09 | 江苏润阳悦达光伏科技有限公司 | Crystalline silicon solar cell PECVD low-reflectivity film optimization process |
| CN113066893A (en) * | 2019-12-13 | 2021-07-02 | 南通苏民新能源科技有限公司 | Double-sided PERC solar cell and preparation method thereof |
| CN113206002A (en) * | 2021-03-13 | 2021-08-03 | 普乐新能源科技(徐州)有限公司 | Method for preparing high-uniformity ultrathin oxide layer |
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