CN203690311U - Crystal silicon battery double-film passivation reflection-reduction structure - Google Patents
Crystal silicon battery double-film passivation reflection-reduction structure Download PDFInfo
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- CN203690311U CN203690311U CN201320886856.4U CN201320886856U CN203690311U CN 203690311 U CN203690311 U CN 203690311U CN 201320886856 U CN201320886856 U CN 201320886856U CN 203690311 U CN203690311 U CN 203690311U
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- silicon nitride
- film
- reflection
- passivation
- nitride film
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Abstract
The utility model relates to the technical field of crystal silicon battery double-film passivation reflection reduction and specially relates to a crystal silicon battery double-film passivation reflection-reduction structure. The crystal silicon battery double-film passivation reflection-reduction structure is characterized in that two layers of silicon nitride films are coated on the surface of a crystal silicon cell sheet, a lower silicon nitride thin film is coated above the crystal silicon cell, an upper silicon nitride thin film is coated above the lower silicon nitride thin film, the lower silicon nitride thin film has the thickness of d2 and the refractive rate of n2, the upper silicon nitride thin film has the thickness of d1 and the refractive rate of n1, and d1 >d2, n1 <n2; and the refractive rate of the lower silicon nitride film is relatively big and will absorb a part of short waves because of the big self extinction coefficient, and the structural optical matching of the double layers of silicon nitride films is better than a single layer of silicon nitride film, so that reflection in short wave bands is decreased, the refractive rate of the silicon nitride film is increased along the direction of light injection, density of Si-H bonds in the films has a rise trend, passivation effect is better with the bigger refractive rate, and thus combination of double effect of double-film reflection reduction and passivation is realized.
Description
Technical field
The utility model relates to crystal silicon solar batteries passivated reflection reducing technical field, particularly a kind of crystal silicon battery duplicature passivated reflection reducing structure.
Background technology
The method of what crystal silicon solar batteries in the market generally adopted is coated with antireflection film on crystal-silicon battery slice reduces efficiency, the life-span etc. that battery improves battery to incident reflection of light, passivation cell surface, but the anti-reflection effect of monofilm and passivation effect are not very good, incident light loss is still very large.
Summary of the invention
The utility model, for the problems referred to above, provides a kind of crystal silicon battery dual layer passivation antireflection structure that has good ultra broadband antireflective effect and strengthen passivation effect.
The utility model is achieved by the following technical solution:
A kind of crystal silicon battery dual layer passivation antireflection structure, it is characterized in that: crystal-silicon battery slice surface is coated with two-layer silicon nitride film, the upper silicon nitride film of lower floor's silicon nitride film of crystal silicon battery top and lower floor's silicon nitride film top, the thickness of described lower floor silicon nitride film is d
2, refractive index is n
2, the thickness d of upper silicon nitride film
1, refractive index is n
1, and d
1>d
2, n
1<n
2.
Described n
1, n
2, d
2pass be n
1 2=n
0n
2, wherein n
0for the refractive index of air, n
1d
1=λ
0/ 4, λ
0for lambda1-wavelength.
The crystal silicon battery dual layer passivation antireflection structure that this utility model provides, due to the refractive index n of lower floor's silicon nitride film
2larger, the extinction coefficient of himself is also large, can absorb a part of shortwave, and double-layer silicon nitride film optical match is structurally better than individual layer silicon nitride film simultaneously, thereby has reduced the reflection of short-wave band.
The beneficial effects of the utility model are: along the direction of light incident, the refractive index of silicon nitride film increases, the density of the Si-H key in film is in rising trend, and the content of Si-H key can directly react the passivation effect of silicon nitride film, therefore the passivation effect of silicon nitride film and refractive index have much relations, and refractive index is larger, passivation effect is better, thereby has realized the combination of duplicature anti-reflection, passivation double effects.
Brief description of the drawings
Below in conjunction with accompanying drawing, the utility model is further described.
Accompanying drawing 1 is the schematic diagram of existing individual layer passivated reflection reducing structure.
The schematic diagram of the dual layer passivation antireflection structure that accompanying drawing 2 can provide for the utility model;
The operation principle schematic diagram of the dual layer passivation antireflection structure that accompanying drawing 3 can provide for the utility model;
In figure, 1 crystal-silicon battery slice, 2 lower floor's silicon nitride films, 3 upper silicon nitride films.
Embodiment
Accompanying drawing is a kind of specific embodiment of the present utility model.This crystal silicon battery dual layer passivation antireflection structure, it is characterized in that: crystal-silicon battery slice 1 surface is coated with two-layer silicon nitride film, the upper silicon nitride film 3 of lower floor's silicon nitride film 2 of crystal-silicon battery slice 1 top and lower floor's silicon nitride film 2 tops, the thickness of described lower floor silicon nitride film 3 is d
2, refractive index is n
2, the thickness d of upper silicon nitride film 3
1, refractive index is n
1, and d
1>d
2, n
1<n
2; Described n
1, n
2, d
2pass be n
1 2=n
0n
2, wherein n
0for the refractive index of air, n
1d
1=λ
0/ 4, λ
0for lambda1-wavelength.Because the refractive index of lower floor's silicon nitride film 2 is larger, and the extinction coefficient of self is large, can absorb a part of shortwave, simultaneously because double-layer silicon nitride film optical match is structurally better than individual layer silicon nitride film, thereby reduce the reflection of short-wave band, along with the refractive index n of lower floor's silicon nitride film 2
2increase, the density of the Si-H key in film is in rising trend, and the content of Si-H key can directly react the passivation effect of silicon nitride film, therefore the passivation effect of silicon nitride film and refractive index have much relations, and refractive index is larger, passivation effect is better, thereby has realized the combination of duplicature anti-reflection, passivation double effects.
Claims (2)
1. a crystal silicon battery duplicature passivated reflection reducing structure, it is characterized in that: crystal-silicon battery slice (1) surface is coated with two-layer silicon nitride film, the upper silicon nitride film (3) of lower floor's silicon nitride film (2) of crystal-silicon battery slice (1) top and lower floor's silicon nitride film (2) top, the thickness of described lower floor silicon nitride film (2) is d
2, refractive index is n
2, the thickness d of upper silicon nitride film (3)
1, refractive index is n
1, and d
1>d
2, n
1<n
2.
2. a kind of crystal silicon battery duplicature passivated reflection reducing structure according to claim 1, is characterized in that: described n
1, n
2, d
2pass be n
1 2=n
0n
2, wherein n
0for the refractive index of air, n
1d
1=λ
0/ 4, λ
0for lambda1-wavelength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320886856.4U CN203690311U (en) | 2013-12-31 | 2013-12-31 | Crystal silicon battery double-film passivation reflection-reduction structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320886856.4U CN203690311U (en) | 2013-12-31 | 2013-12-31 | Crystal silicon battery double-film passivation reflection-reduction structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203690311U true CN203690311U (en) | 2014-07-02 |
Family
ID=51012181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320886856.4U Expired - Fee Related CN203690311U (en) | 2013-12-31 | 2013-12-31 | Crystal silicon battery double-film passivation reflection-reduction structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203690311U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103824890A (en) * | 2013-12-31 | 2014-05-28 | 秦广飞 | Crystal silicon cell double-layer passivation anti-reflection structure |
-
2013
- 2013-12-31 CN CN201320886856.4U patent/CN203690311U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103824890A (en) * | 2013-12-31 | 2014-05-28 | 秦广飞 | Crystal silicon cell double-layer passivation anti-reflection structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140702 Termination date: 20181231 |