CN202004002U - Laminated antireflection film for monocrystal silicon solar cell - Google Patents

Laminated antireflection film for monocrystal silicon solar cell Download PDF

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Publication number
CN202004002U
CN202004002U CN 201120024435 CN201120024435U CN202004002U CN 202004002 U CN202004002 U CN 202004002U CN 201120024435 CN201120024435 CN 201120024435 CN 201120024435 U CN201120024435 U CN 201120024435U CN 202004002 U CN202004002 U CN 202004002U
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CN
China
Prior art keywords
film
solar cell
silicon
silicon solar
silicon nitride
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Expired - Fee Related
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CN 201120024435
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Chinese (zh)
Inventor
程鹏飞
黄仑
龚双龙
全余生
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YIXING MAGI SOLAR TECHNOLOGY Co Ltd DONGFANG ELECTRIC Corp
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YIXING MAGI SOLAR TECHNOLOGY Co Ltd DONGFANG ELECTRIC Corp
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Priority to CN 201120024435 priority Critical patent/CN202004002U/en
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Publication of CN202004002U publication Critical patent/CN202004002U/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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Abstract

The utility model discloses a laminated antireflection film for a monocrystal silicon solar cell, wherein a titanium dioxide (TiO2) film (2) and a silicon nitride film (1) are sequentially arranged from the inside to the outside on the front surface of a monocrystaline silicon piece (3) of a solar cell; the thickness of the TiO2 film (2) is 30-40nm; and the thickness of the silicon nitride film (1) is 40-50nm. The reflective index of the TiO2 film which is used by the laminated antireflection film for the monocrystal silicon solar cell is 2.3, the reflective index of the silicon nitride film is 1.4-1.7, compared with a monofilm, the laminated film has better optical match properties, not only has excellent antireflection effect of the 550nm light which is responded by the main spectrum of the silicon, but also has good conditioned reflection effect to the lights with the wavelengths within 350-1100nm, and accordingly, the conversion efficiency of the monocrystal silicon solar cell is improved.

Description

Monocrystaline silicon solar cell lamination antireflective coating
Technical field
The utility model relates to a kind of antireflective coating structure of solar cell, lamination antireflective coating structure especially, specifically a kind of monocrystaline silicon solar cell lamination antireflective coating.
Background technology
Solar cell is the device that solar energy luminous energy is converted to electric energy, and the conversion efficiency of solar battery sheet is commonly defined as the ratio of power output with the sunlight gross power that incides battery sheet surface of battery sheet.It is that reflection and refraction can take place that solar irradiation is mapped to battery sheet surface, for improving the conversion efficiency of battery sheet, then will reduce reflection loss as far as possible.Reducing reflection has two kinds of methods at present, the one, matte is made on the surface of battery sheet, another kind then is to plate antireflective coating on battery sheet surface, along with the development of heliotechnics, multiple reflectance coating occurred, have individual layer, double-deck, multilayer is also arranged.The quality of antireflective coating performance depend on film material itself character and with the optical match of silicon chip, it is generally acknowledged that the refractive index of layers of material should satisfy n a<n 1<n 2<...<n i<n Si(n wherein aBe the refractive index of air, n SiBe the refractive index of silicon, n 1n 2N iBe respectively the refractive index of each film material).Film material at present commonly used has SiO 2, SiNx, Al 2O 3, TiO 2, MgF etc., single layers of material is difficult to obtain desirable anti-reflective effect, existing multilayer film just has anti-reflective effect preferably to wavelength light about 550nm, and limited to the anti-reflective effect of the sunlight of other wavelength.
Summary of the invention
The purpose of this utility model is that the antireflective coating at present simple layer is difficult to obtain desirable anti-reflective effect, multilayer film just has anti-reflective effect preferably to wavelength light about 550nm, and to the limited problem of anti-reflective effect of the sunlight of other wavelength, proposing a kind of monocrystaline silicon solar cell lamination antireflective coating, is the reflecting film structure of a kind of quality height, function admirable.
The technical solution of the utility model is:
A kind of monocrystaline silicon solar cell lamination antireflective coating at the front surface of solar battery mono-crystal silicon substrate, is provided with TiO from the inside to the outside successively 2Film and silicon nitride film.
TiO of the present utility model 2The thickness of film is 30 ~ 40nm.
The thickness of silicon nitride film of the present utility model is 40 ~ 50nm.
The beneficial effects of the utility model:
The TiO that the utility model is used 2Film refractive index is 2.3, the refractive index of silicon nitride film is 1.4 ~ 1.7, this stack membrane is compared with monofilm has better optical match characteristic, not only the light at the 550nm of the principal spectrum of silicon response there is excellent anti-reflective effect, and the light of wavelength in 350 ~ 1100nm scope all there is good part reflecting effect, thereby improve the conversion efficiency of monocrystaline silicon solar cell, after adopting this structure, the conversion efficiency of the monocrystaline silicon solar cell of my company's suitability for industrialized production surpasses 18.5%, is the our times highest level.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
1, silicon nitride film; 2, TiO 2Film; 3, single crystal silicon substrate.
Embodiment
Below in conjunction with drawings and Examples the utility model is further described.
As shown in Figure 1, a kind of monocrystaline silicon solar cell lamination antireflective coating at the front surface of solar battery mono-crystal silicon substrate 3, is provided with TiO from the inside to the outside successively 2 Film 2 and silicon nitride film 1.
TiO of the present utility model 2The thickness of film 2 is 30 ~ 40nm; The thickness of silicon nitride film 1 is 40 ~ 50nm.
The TiO that the utility model is used 2Film refractive index is 2.3, the refractive index of silicon nitride film is 1.4 ~ 1.7, this stack membrane is compared with monofilm has better optical match characteristic, not only the light at the 550nm of the principal spectrum of silicon response there is excellent anti-reflective effect, and the light of wavelength in 350 ~ 1100nm scope all there is good part reflecting effect, thereby improve the conversion efficiency of monocrystaline silicon solar cell, after adopting this structure, the conversion efficiency of the monocrystaline silicon solar cell of my company's suitability for industrialized production surpasses 18.5%, is the our times highest level.
The utility model does not relate to the part prior art that maybe can adopt all same as the prior art to be realized.

Claims (3)

1. a monocrystaline silicon solar cell lamination antireflective coating is characterized in that the front surface in solar battery mono-crystal silicon substrate (3), is provided with TiO from the inside to the outside successively 2Film (2) and silicon nitride film (1).
2. monocrystaline silicon solar cell lamination antireflective coating according to claim 1 is characterized in that described TiO 2The thickness of film (2) is 30 ~ 40nm.
3. monocrystaline silicon solar cell lamination antireflective coating according to claim 1, the thickness that it is characterized in that described silicon nitride film (1) is 40 ~ 50nm.
CN 201120024435 2011-01-25 2011-01-25 Laminated antireflection film for monocrystal silicon solar cell Expired - Fee Related CN202004002U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201120024435 CN202004002U (en) 2011-01-25 2011-01-25 Laminated antireflection film for monocrystal silicon solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201120024435 CN202004002U (en) 2011-01-25 2011-01-25 Laminated antireflection film for monocrystal silicon solar cell

Publications (1)

Publication Number Publication Date
CN202004002U true CN202004002U (en) 2011-10-05

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CN 201120024435 Expired - Fee Related CN202004002U (en) 2011-01-25 2011-01-25 Laminated antireflection film for monocrystal silicon solar cell

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CN (1) CN202004002U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102610663A (en) * 2011-01-25 2012-07-25 东方电气集团(宜兴)迈吉太阳能科技有限公司 Laminated anti-reflective film for monocrystalline silicon solar cells
CN102738284A (en) * 2012-07-17 2012-10-17 东方电气集团(宜兴)迈吉太阳能科技有限公司 Novel solar photovoltaic module
WO2014032457A1 (en) * 2012-09-03 2014-03-06 东方电气集团(宜兴)迈吉太阳能科技有限公司 Preparing method of anti-reflection film having anti-pid effect

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102610663A (en) * 2011-01-25 2012-07-25 东方电气集团(宜兴)迈吉太阳能科技有限公司 Laminated anti-reflective film for monocrystalline silicon solar cells
CN102738284A (en) * 2012-07-17 2012-10-17 东方电气集团(宜兴)迈吉太阳能科技有限公司 Novel solar photovoltaic module
WO2014032457A1 (en) * 2012-09-03 2014-03-06 东方电气集团(宜兴)迈吉太阳能科技有限公司 Preparing method of anti-reflection film having anti-pid effect
US9548404B2 (en) 2012-09-03 2017-01-17 Dongfang Electric (Yixing) Magi Solar Power Technology Co., Ltd Method for fabricating anti-reflection film with anti-PID effect

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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111005

Termination date: 20170125

CF01 Termination of patent right due to non-payment of annual fee