CN101533861B - Three-layer antireflective film for solar battery and preparation method thereof - Google Patents
Three-layer antireflective film for solar battery and preparation method thereof Download PDFInfo
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- CN101533861B CN101533861B CN200910019870A CN200910019870A CN101533861B CN 101533861 B CN101533861 B CN 101533861B CN 200910019870 A CN200910019870 A CN 200910019870A CN 200910019870 A CN200910019870 A CN 200910019870A CN 101533861 B CN101533861 B CN 101533861B
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- 230000003667 anti-reflective effect Effects 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 56
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 13
- 239000012788 optical film Substances 0.000 claims abstract description 4
- 239000006117 anti-reflective coating Substances 0.000 claims description 43
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000001771 vacuum deposition Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 2
- 230000026267 regulation of growth Effects 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- 238000002834 transmittance Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 34
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a three-layer antireflective film for a solar battery and a preparation method thereof, which are suitable for an III-V family compound solar battery, in particular a GaInP/GaInAs/Ge multijunction solar battery. Antireflective films are orderly laminated on the GaInP/GaInAs/Ge multijunction solar battery to form a compound optical film; and in three layers of antireflectivefilms, the first layer is a AlGaInP film with the refractive index between 3.15 and 3.45, the second layer is a Ta2O5 film with the refractive index between 2.12 and 2.18, and the third layer is a MgF2 film with the refractive index approximately between 1.37 and 1.39. The three layers of the antireflective films have small absorption in an application wave band range, good optical and chemical stability, good combination and firmness with a base material of the battery, matched refractive indexes, and simple preparation process at the same time; and the mean transmittance of a solar spectrumwith a wave band between 40 and 1,200 nm on the surface of the battery is over 98 percent.
Description
Technical field
The present invention relates to be suitable for the antireflective coating of III-V compounds of group solar cell, specifically is a kind of three-layer antireflective film for solar battery that can be widely used in the GaInP/GaInAs/Ge multijunction solar cell and preparation method thereof.
Background technology
Solar cell is to be transform light energy the opto-electronic device of electric energy, its photoelectric conversion efficiency is defined as gross output and the ratio that incides the sunlight gross power of solar battery surface, in the physical process of relevant light conversion efficiency loss, reflection loss is particularly important, it has reduced the number of photons of solar cell unit are incident, cause the solar cell current density to reduce, thereby influence the energy conversion efficiency of battery.For improving the photoelectric conversion efficiency of battery, should reduce the loss of battery surface reflection of light, increase optical transmission.Therefore the design of antireflective coating directly affects solar cell to the reflection of incident light rate, and the raising of efficiency of solar cell is played important effect.
The solar cell incident light spectrum can be divided into AM0 and two kinds of situations of AM1.5 according to its applied environment, which kind of spectrum no matter, the solar photon Wavelength distribution is mainly at 500～700nm, the central homology wavelength of antireflective coating is chosen in this wavelength band, need take into account the photon transmissivity between 400～1200nm simultaneously.Antireflective coating can be selected the single or multiple lift antireflective coating for use, and antireflecting effect is decided by the refractive index and the thickness of each layer antireflective coating.The individual layer antireflective coating is to utilize light to reach anti-reflective effect subtracting and penetrate the principle of interference that the both sides places reverberation presence bit of film differs, and can utilize Fresnel formula to try to achieve reflectivity; For assembly of thin films, can appoint therein and get one deck, be top each tunic equivalence an interface, is following each tunic also equivalence an interface, then the whole system equivalence is a monofilm, can obtain the equivalent fresnel coefficient of assembly of thin films, thereby obtain reflectivity.
At present, be usually used in antireflecting Coating Materials and mainly contain MgF
2, ZnS, TiO
2, Ta
2O
5, SiO
2And Si
3N
4Deng, the used antireflective coating of solar cell must satisfy following requirement: absorb minimum in the application band scope; Good optical and chemical stability are arranged; Good with the associativity and the firmness of Window layer; Guarantee between the multilayer film, the refractive index between film and the solar cell matrix is complementary; Produce simultaneously and need also to take into account that preparation technology is simple and with low cost waits requirement for industrialization.Single layer anti reflective coating is that the simplest film is, but the anti-reflection ability of monofilm is subjected to the restriction of material itself, can not reach very high, simultaneously, it only has anti-reflection effect preferably to single wavelength, and need in relative broad range, (about 400～1200nm wave band) eliminate residual reflection for solar cell, this just needs the broad-band transparence-increased film of preparation multilayer system.
Summary of the invention
For addressing the above problem, the present invention is intended to propose a kind of three-layer antireflective film for solar battery and preparation method thereof, the antireflective evaporation and move back that membrane process is simple, antireflective coating good stability, 400～1200nm wave band solar spectrum in the battery surface average transmittance greater than 98%.
A kind of three-layer antireflective film for solar battery of the present invention, it is characterized in that: on the GaInP/GaInAs/Ge multijunction solar cell, stack gradually antireflective coating and form complex optical film, the ground floor antireflective coating is that refractive index is 3.15～3.45 AlGaInP film, and second layer antireflective coating is that refractive index is 2.12～2.18 Ta
2O
5Film, the 3rd layer of antireflective coating is that refractive index is 1.37～1.39 MgF
2Film.
In the above-mentioned anti-reflection film, the thickness of ground floor antireflective coating AlGaInP film is 30～40nm; Second layer antireflective coating Ta
2O
5The thickness of film is 60～80nm; The 3rd layer of antireflective coating MgF
2The thickness of film is 90～120nm.
The preparation method of above-mentioned a kind of three-layer antireflective film for solar battery: its step is as follows:
1) in the MOCVD system, grown behind the GaInP top battery emitter in the GaInP/GaInAs/Ge multijunction solar cell, growth regulation one deck antireflective coating AlGaInP film and then, growth temperature is 630～670 ℃, growth rate is 0.3～0.5nm/s, and growth thickness is 30～40nm;
2) in the MOCVD system, one deck GaAs that and then grows block a shot the layer, growth temperature is 630～670 ℃, growth rate is 0.3～0.5nm/s, growth thickness is 400～600nm;
3) carry out battery chip and make electrode evaporation;
4) carry out battery chip and make, the etching electrode pattern also erodes GaAs block layer outside the electrode;
5) in vacuum coating equipment, evaporation second layer antireflective coating Ta
2O
5Film, the growth substrate temperature is 100～140 ℃, background vacuum pressure is greater than 10
-5Torr, growth rate is 0.1～0.3nm/s, growth thickness is 60～80nm;
6) in vacuum coating equipment, the 3rd layer of antireflective coating MgF of evaporation
2Film, the growth substrate temperature is 100～140 ℃, background vacuum pressure is greater than 10
-5Torr, growth rate is 0.3～0.5nm/s, growth thickness is 90～120nm;
7) cover the outer part of electrode with photoresist, the antireflective coating with dense hydrofluoric acid solution etched electrodes top removes photoresist again.
The present invention is suitable for III-V compounds of group solar cell, be applicable to the many solar cells of GaInP/GaInAs/Ge especially, stacking gradually generation ground floor reflectance coating by the GaInP top battery emitter in multijunction solar cell is that AlGaInP film, second layer reflectance coating are Ta
2O
5Film, the 3rd layer of reflectance coating are MgF
2Film, the selected three layers of reflectance coating of the present invention absorb little in the application band scope, good optical and chemical stability are arranged, good with the associativity and the firmness of battery basis material, refractive index is complementary, simultaneously preparation technology is simple, at 400～1200nm wave band solar spectrum in the battery surface average transmittance greater than 98%.
Description of drawings
Fig. 1 is three layers of anti-reflection film of solar cell structural representation of the present invention.
Fig. 2 a to Fig. 2 f is three layers of anti-reflection film of solar cell preparation technology of the present invention general flow chart.
Among the figure:
The 100:GaInP/GaInAs/Ge multijunction solar cell; 110: ground floor antireflective coating AlGaInP film;
120:GaAs block a shot the layer; 130: metal electrode;
200: second layer antireflective coating Ta
2O
5Film; 300: the three layers of antireflective coating MgF
2Film;
Embodiment
The present invention is further described below in conjunction with drawings and Examples.
A kind of three-layer antireflective film for solar battery as shown in Figure 1 stacks gradually antireflective coating and forms complex optical film on GaInP/GaInAs/Ge multijunction solar cell 100, the refractive index of ground floor antireflective coating AlGaInP film 110 is 3.25, thickness is 40nm; Second layer antireflective coating Ta
2O
5The refractive index of film 200 is 2.15, thickness is 70nm; The 3rd layer of antireflective coating MgF
2The refractive index of film 300 is 1.38, thickness is 105nm.
The preparation method of a kind of three-layer antireflective film for solar battery of the present invention, its step is as follows:
In the MOCVD system, growth GaInP/GaInAs/Ge multijunction solar cell is until GaInP top battery emitter 100 earlier; In the MOCVD system, shown in Fig. 2 a, growth AlGaInP film 110 is as the ground floor antireflective coating on GaInP/GaInAs/Ge multijunction solar cell 100, it plays the effect of top battery Window layer simultaneously, growth temperature is 640 ℃, and growth rate is 0.4nm/s, and growth thickness is 40nm.
In the MOCVD system, shown in Fig. 2 b, one deck GaAs block layer 120 of on 110 layers of GaInP/GaInAs/Ge multijunction solar cells, and then growing, growth temperature is 640 ℃, and growth rate is 0.4nm/s, and growth thickness is 500nm.
Shown in Fig. 2 c, carry out battery chip and make electrode evaporation 130.
Shown in Fig. 2 d, erode the GaAs block layer 120 outside the electrode 130.
In vacuum coating equipment, shown in Fig. 2 e, evaporation second layer antireflective coating Ta
2O
5Film 200, the growth substrate temperature is 120 ℃, background vacuum pressure is greater than 10
-5Torr, growth rate is 0.2nm/s, thickness is 70nm.
In vacuum coating equipment, shown in Fig. 2 f, the 3rd layer of antireflective coating MgF of evaporation
2Film 300, growth substrate temperature are 120 ℃, and background vacuum pressure is big by sub 10
-5Torr, growth rate is 0.4nm/s, thickness is 105nm.
Cover the part outside the electrode 130 with photoresist, the antireflective coating with dense hydrofluoric acid solution etched electrodes 130 tops removes photoresist again.
Above embodiment is only for the usefulness that the present invention is described, but not limitation of the present invention, person skilled in the relevant technique under the situation that does not break away from the spirit and scope of the present invention, can also be made various conversion or variation.Therefore, all technical schemes that are equal to also should belong to category of the present invention, should be limited by each claim.
Claims (5)
1. three-layer antireflective film for solar battery, it is characterized in that: on the GaInP/GaInAs/Ge multijunction solar cell, stack gradually antireflective coating and form complex optical film, the ground floor antireflective coating is that refractive index is 3.15～3.45 AlGaInP film, and second layer antireflective coating is that refractive index is 2.12～2.18 Ta
2O
5Film, the 3rd layer of antireflective coating is that refractive index is 1.37～1.39 MgF
2Film.
2. a kind of three-layer antireflective film for solar battery as claimed in claim 1 is characterized in that: the thickness of ground floor antireflective coating AlGaInP film is 30～40nm.
3. a kind of three-layer antireflective film for solar battery as claimed in claim 1 is characterized in that: second layer antireflective coating Ta
2O
5The thickness of film is 60～80nm.
4. a kind of three-layer antireflective film for solar battery as claimed in claim 1 is characterized in that: the 3rd layer of antireflective coating MgF
2The thickness of film is 90～120nm.
5. the preparation method of a three-layer antireflective film for solar battery, its step is as follows:
1) in the MOCVD system, grown behind the GaInP top battery emitter in the GaInP/GaInAs/Ge multijunction solar cell, growth regulation one deck antireflective coating AlGaInP film and then, growth temperature is 630～670 ℃, growth rate is 0.3～0.5nm/s, and growth thickness is 30～40nm;
2) in the MOCVD system, one deck GaAs that and then grows block a shot the layer, growth temperature is 630～670 ℃, growth rate is 0.3～0.5nm/s, growth thickness is 400～600nm;
3) carry out battery chip and make electrode evaporation;
4) carry out battery chip and make, the etching electrode pattern also erodes GaAs block layer outside the electrode;
5) in vacuum coating equipment, evaporation second layer antireflective coating Ta
2O
5Film, the growth substrate temperature is 100～140 ℃, background vacuum pressure is greater than 10
-5Torr, growth rate is 0.1～0.3nm/s, growth thickness is 60～80nm;
6) in vacuum coating equipment, the 3rd layer of antireflective coating MgF of evaporation
2Film, the growth substrate temperature is 100～140 ℃, background vacuum pressure is greater than 10
-5Torr, growth rate is 0.3～0.5nm/s, growth thickness is 90～120nm;
7) cover the outer part of electrode with photoresist, the antireflective coating with dense hydrofluoric acid solution etched electrodes top removes photoresist again.
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|---|---|---|---|
| CN200910019870A CN101533861B (en) | 2009-03-18 | 2009-03-18 | Three-layer antireflective film for solar battery and preparation method thereof |
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| CN200910019870A CN101533861B (en) | 2009-03-18 | 2009-03-18 | Three-layer antireflective film for solar battery and preparation method thereof |
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| CN101533861B true CN101533861B (en) | 2010-05-12 |
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|---|---|---|---|---|
| CN102034888A (en) * | 2010-10-19 | 2011-04-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Thin film solar cell and preparation method thereof |
| CN102683436B (en) * | 2011-03-09 | 2016-03-30 | 常州亚玛顿股份有限公司 | A kind of thin-film solar cells electro-conductive glass and preparation method thereof |
| CN102244151A (en) * | 2011-08-05 | 2011-11-16 | 厦门市三安光电科技有限公司 | Method for manufacturing solar battery |
| CN102496633A (en) * | 2011-12-16 | 2012-06-13 | 中国东方电气集团有限公司 | Multi-layer antireflection film for GaAs solar cell |
| CN103824943A (en) * | 2012-11-19 | 2014-05-28 | 海洋王照明科技股份有限公司 | Solar cell device and preparation method thereof |
| CN102983226A (en) * | 2012-12-14 | 2013-03-20 | 上海空间电源研究所 | Wide spectral antireflective film for multi-junction solar cell and fabrication method of antireflective film |
| CN103996761B (en) * | 2013-02-16 | 2018-04-10 | 晶元光电股份有限公司 | Light-emitting component |
| CN103199149B (en) * | 2013-02-28 | 2015-07-15 | 溧阳市生产力促进中心 | Manufacturing method of four-step cascade photovoltaic cell with antireflection film |
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| CN105280729A (en) * | 2015-03-13 | 2016-01-27 | 常州天合光能有限公司 | Solar cell passivation and antireflection thin film and preparation method thereof |
| CN108333647A (en) * | 2017-12-27 | 2018-07-27 | 中国电子科技集团公司第十八研究所 | A kind of space cover glass graded index anti-reflection film and preparation method thereof |
| CN112558192B (en) * | 2019-09-25 | 2023-06-02 | 深圳市融光纳米科技有限公司 | Optical film, nano-structure color crystal, and mixture and preparation method thereof |
| CN114068730B (en) * | 2021-11-22 | 2024-08-02 | 厦门乾照光电股份有限公司 | Solar cell and manufacturing method thereof |
| CN114725223B (en) * | 2022-03-21 | 2022-12-16 | 中山德华芯片技术有限公司 | Solar cell antireflection film and preparation method and application thereof |
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| CN101022135A (en) * | 2007-02-09 | 2007-08-22 | 江苏艾德太阳能科技有限公司 | Silicon solar battery antireflective thin film |
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| CN101022135A (en) * | 2007-02-09 | 2007-08-22 | 江苏艾德太阳能科技有限公司 | Silicon solar battery antireflective thin film |
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| 史济群 欧海燕 周京英 李宁.钝化硅太阳电池反射膜的研究.华中理工大学学报25 6.1997,25(6),4-7. |
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Effective date of registration: 20231031 Address after: No.20 Haitai South Road, Huayuan Industrial Zone, Xiqing District, Tianjin 300384 Patentee after: Tianjin Sanan Optoelectronics Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |