CN103996761B - Light-emitting component - Google Patents
Light-emitting component Download PDFInfo
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- CN103996761B CN103996761B CN201410046186.4A CN201410046186A CN103996761B CN 103996761 B CN103996761 B CN 103996761B CN 201410046186 A CN201410046186 A CN 201410046186A CN 103996761 B CN103996761 B CN 103996761B
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- bonding layer
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- transparency carrier
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- 239000004065 semiconductor Substances 0.000 claims abstract description 111
- 238000003475 lamination Methods 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims description 41
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims description 5
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 claims 1
- 238000009738 saturating Methods 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910003087 TiOx Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910010092 LiAlO2 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention discloses a kind of light-emitting component, includes a transparency carrier；At least luminous lamination of semiconductor is located on transparency carrier, wherein semiconductor light emitting lamination includes one first semiconductor layer close to transparency carrier, one second semiconductor layer away from transparency carrier, and the luminescent layer between the first semiconductor layer and the second semiconductor layer, wherein luminescent layer can send a light；And one bonding layer between transparency carrier and semiconductor light emitting lamination, the bonding layer includes the first bonding layer close to first semiconductor layer, and wherein first semiconductor layer has first refractive index n1, the transparency carrier has the second refractive index n2, first bonding layer has refractive index nb1, and respectively the refractive index meets relationship below:(n1*n2)1/2+0.3≥nb1≥(n1*n2)1/2‑0.3。
Description
Technical field
The present invention is the light-emitting component for the bonding layer for having graded index on a light-emitting component, especially one.
Background technology
Light emitting diode (LED) is a kind of solid semiconductor element, and light emitting diode (LED) includes a light-emitting component knot
Structure, wherein light emitting element structure comprise at least a p-type semiconductor layer, a n-type semiconductor layer and a luminescent layer, wherein luminescent layer shape
Into between p-type semiconductor layer and n-type semiconductor layer.The structure of light-emitting component includes the compound being made up of III-group Ⅴ element
Semiconductor, such as gallium phosphide (GaP), GaAs (GaAs), gallium nitride (GaN), its principle of luminosity are in a DC Electric Field
Under, the hole that the electronics that is provided using n-type semiconductor layer is provided with p-type semiconductor layer is near the p-n junction of luminescent layer
It is compound, convert electric energy to luminous energy.
Fig. 1 is the profile of an existing light-emitting component 1, as shown in figure 1, light-emitting component 1 includes a transparency carrier 10, one
First semiconductor layer 12 is located on transparency carrier 10, and one second semiconductor layer 16 is located on the first semiconductor layer 12 and a luminescent layer
14 between the first semiconductor layer 12 and the second semiconductor layer 16.The material of first semiconductor layer 12 is partly led comprising III-V race
Body material, between its refractive index is about 3.1~3.5.The material of transparency carrier 10 includes sapphire (sapphire) or glass, its
Between refractive index is about 1.5~1.7.
Because the refractive index difference between the semiconductor layer 12 of transparency carrier 10 and first is big so that transparency carrier 10 and first
Critical angle θ c between semiconductor layer 12 is less than 35 degree.The light that luminescent layer 14 is sent is from the first semiconductor layer 12 toward transparent
When substrate 10 projects, the incidence angle of light will can just project within 35 degree, and light of the incidence angle more than 35 degree can be transparent
Total reflection is formed between the semiconductor layer 12 of substrate 10 and first, therefore light is limited in inside light-emitting component 1, reduce luminous member
The light extraction efficiency of part 1.
Fig. 2 is the distribution of light intensity distribution scenario of existing light-emitting component 1.Due to the semiconductor layer 12 of transparency carrier 10 and first
Between critical angle θ c be less than 35 degree, only light of the incidence angle within 35 degree can just project from transparency carrier 10, thus show
About 117 degree of a far field angle of the light that some light-emitting components 1 are sent under 50% distribution of light intensity.
The content of the invention
The present invention discloses a kind of light-emitting component, includes a transparency carrier；At least luminous lamination of semiconductor is located at transparent base
On plate, wherein semiconductor light emitting lamination includes one first semiconductor layer close to transparency carrier, one second away from transparency carrier
Semiconductor layer, and the luminescent layer between the first semiconductor layer and the second semiconductor layer, wherein luminescent layer can send a light
Line；And one bonding layer between transparency carrier and semiconductor light emitting lamination, the bonding layer is included close to first semiconductor layer
The first bonding layer, wherein first semiconductor layer has first refractive index n1, the transparency carrier has the second refractive index n2, should
First bonding layer has refractive index nb1, and respectively the refractive index meets relationship below:(n1*n2)1/2+0.3≥nb1≥(n1*n2
)1/2-0.3。
Brief description of the drawings
Fig. 1 is the schematic diagram of existing light-emitting component.
Fig. 2 is the schematic diagram of the distribution of light intensity distribution scenario of existing light-emitting component.
Fig. 3 is the schematic diagram of the light-emitting component of one embodiment of the invention.
Fig. 4 is the schematic diagram of the distribution of light intensity distribution scenario of the light-emitting component of one embodiment of the invention.
Fig. 5 is the schematic diagram of the light-emitting component of third embodiment of the invention.
Symbol description
Light-emitting component 1,2,2 '
Transparency carrier 10,20
Bonding layer 21,21 '
First bonding layer 211
Second bonding layer 212
3rd bonding layer 213
Semiconductor light emitting lamination 23
First semiconductor layer 12,22
Luminescent layer 14,24
Second semiconductor layer 16,26
Surface S1
Side wall S2
Embodiment
In order that the present invention narration it is more detailed with it is complete, refer to description below and coordinate Fig. 3 diagram.According to this
The profile of a light-emitting component 2 of an embodiment is invented, as shown in figure 3, light-emitting component 2 includes a transparency carrier 20, half is led
The body lamination 23 that lights be located on transparency carrier 20, and wherein semiconductor light emitting lamination 23 includes the one the first half of close transparency carrier 20
Conductor layer 22, one second semiconductor layer 26 away from transparency carrier 20, and a luminescent layer 24 are located at the first semiconductor layer 22 and the
Between two semiconductor layers 26.
The material of transparency carrier 20 includes inorganic material or III-V race's semi-conducting material.Inorganic material includes carborundum
(SiC), germanium (Ge), sapphire (sapphire), lithium aluminate (LiAlO2), zinc oxide (ZnO), glass or quartz.III-V race half
Conductor material includes indium phosphide (InP), gallium phosphide (GaP), gallium nitride (GaN), aluminium nitride (AlN) material.Transparency carrier 20 can
To carry and/or growing semiconductor light lamination 23.
The material of semiconductor light emitting lamination 23 includes III-V race's semi-conducting material, such as can include more than one element
The group formed selected from gallium (Ga), aluminium (Al), indium (In), phosphorus (P), nitrogen (N), zinc (Zn), cadmium (Cd) and selenium (Se).Yu Ben
In one embodiment of invention, the first semiconductor layer 22 has one first electric conductivity, and the second semiconductor layer 26 has one second conduction
Property, wherein the first electric conductivity is different from the second electric conductivity, such as the first semiconductor layer 22 can be a n-type semiconductor layer, the second half
Conductor layer 26 can be a p-type semiconductor layer.The electronics for coming from n-type semiconductor layer exists with the hole for coming from p-type semiconductor layer
It is compound in luminescent layer 24 under the driving of one impressed current, send a light and projected from transparency carrier 20.First semiconductor layer 22 leans on
One surface S1 of near-transparent substrate 20 can be a mat surface, to reduce the probability that light is totally reflected in surface S1.Form mat surface
Method be not particularly limited, such as can be used etching or mechanical lapping.The method of semiconductor light emitting lamination 23 is formed without spy
Do not limit, except Metalorganic chemical vapor deposition method (MOCVD), molecular beam epitaxy (MBE) also can be used, hydrite vapor phase sinks
Area method (HVPE), vapour deposition method and ion plating method.
The light-emitting component 2 of the present invention is not limited to only include a semiconductor light emitting lamination 23, can also include multiple half
The luminous lamination 23 of conductor is located on transparency carrier 20, can have a conductor structure make between plurality of semiconductor light emitting lamination 23 more
Individual semiconductor light emitting lamination 23 on this transparency carrier 20 in a manner of series, parallel, connection in series-parallel etc. in being electrically connected to each other.
As shown in figure 3, according to one embodiment of the invention, light-emitting component 2 is also located at transparency carrier comprising a bonding layer 21
20 and first between semiconductor layer 22, and wherein bonding layer 21 is a laminated construction, and the engagement number of layers of laminated construction is not limited to
More than 2 layers, or 2 layers.
According to the embodiment shown in Fig. 3, bonding layer 21 include one first bonding layer 211 close to the first semiconductor layer 22 with
One second bonding layer 212 away from the first semiconductor layer 22.According to one embodiment of the invention, the first bonding layer 211 is and the
Semi-conductor layer 22 is adjacent.First bonding layer 211 and the second bonding layer 212 be sequentially formed at the first semiconductor layer 22 on
Form bonding layer 21.In the present embodiment, the thickness of the first bonding layer 211 or the second bonding layer 212 is less than 3 μm, bonding layer 21
Gross thickness be less than 4 μm.The material of bonding layer 21 includes oxide or metal oxide.Metal oxide includes titanium dioxide
(TiO2), tantalum oxide (Ta2O5), tellurium dioxide (TeO2), yittrium oxide (Y2O3), hafnium oxide (HfO2), aluminum oxide (Al2O3), oxygen
Change indium zinc (IZO) or tin indium oxide (ITO).The method for forming bonding layer 21 is not particularly limited, and except rotary coating, also may be used
Use vapour deposition method.
The light that the material of bonding layer 21 and transparency carrier 20 is sent for luminescent layer 24 there is a penetration to be for
More than 60%, preferably more than 70%, more preferably more than 80%, light is projected from transparency carrier 20.
According to one embodiment of the invention, the first bonding layer 211 comprises at least a kind of metal oxide materials and is different from the
The metal oxide materials of two bonding layers 212.Such as first the material of bonding layer 211 can be tellurium dioxide (TeO2), it is rolled over
The rate of penetrating is about 2.26, and the material of the second bonding layer 212 can be hafnium oxide (HfO2), its refractive index is about 2.05.
According to another embodiment of the present invention, the first bonding layer 211 and the second bonding layer 212 aoxidize comprising identical metal
Thing material, wherein the oxygen content of the metal oxide materials of the first bonding layer 211 is different from the metal oxide material of the second bonding layer 212
The oxygen content of material.Such as first the material of bonding layer 211 can be TiOx, the material of the second bonding layer 212 can be TiOy, its
Middle x ≠ y, and TiOx refractive index is more than TiOy.
First semiconductor layer 22 has a first refractive index n1, transparency carrier 20 has one second refractive index n2, wherein first
Refractive index n1More than the second refractive index n2.According to one embodiment of the invention, the first refractive index n of the first semiconductor layer 221Scope
Can be 3.0~3.6 between, the second refractive index n of transparency carrier 202Scope can be 1.4~1.7 between, the second refractive index n2With
One refractive index n1Difference more than 1.
Bonding layer 21 is a structure with graded index, the first bonding layer 211 of close first semiconductor layer 22
Refractive index nb1Different from the refractive index n of the second bonding layer 212 away from the first semiconductor layer 22b2, refractive index nb1With refractive index nb2
Between can be a consecutive variations or a graded.In other words, the first semiconductor layer 22, bonding layer 21 and transparency carrier 20 it
Between, first refractive index n1, refractive index nb1, refractive index nb2, to the second refractive index n2Between be that a consecutive variations or a gradient is presented
Change.
The refractive index n of first bonding layer 211b1Less than the first refractive index n of the first semiconductor layer 221, and it is more than transparent base
Second refractive index n of plate 202.Specifically, the refractive index n of the first bonding layer 211b1Scope can be 2.3~2.9 between.Second
The refractive index n of bonding layer 212b2Less than the refractive index n of the first bonding layer 211b1, and more than the second refractive index of transparency carrier 20
n2.Specifically, the refractive index n of the second bonding layer 212b2Scope can be 1.8~2.2 between.
Because the refractive index of III-V race's semi-conducting material is between 3.0~3.6, the refractive index of the material of transparency carrier 20 exists
Between 1.4~1.7.When light enters directly into transparency carrier 20 from the first semiconductor layer 22, critical angle θ c scope is 22
Between~35 degree, if incidence angle is more than this scope, light can reflex to semiconductor light emitting lamination 23 and be absorbed.The present invention's
One embodiment is made by forming the bonding layer 21 with graded index between transparency carrier 20 and semiconductor light emitting lamination 23
Light on the direct of travel from the directive transparency carrier 20 of luminescent layer 24, light in each bonding layer, such as the first bonding layer 211,
Second bonding layer 212, all it is more than 35 degree with each critical angle θ c of transparency carrier 20, is preferably more than 40 degree, more preferably more than 50 degree.Folding
The probability that light is totally reflected from the direct of travel of the directive transparency carrier 20 of luminescent layer 24, reduction light can be changed by penetrating the change of rate,
Avoid light from being confined to inside light-emitting component 2, thus the brightness of light-emitting component 2 compared to existing light-emitting component 1 brightness about
15% can be increased.
Fig. 4 is light-emitting component 2 its distribution of light intensity distribution scenario disclosed in the embodiment of the present invention.As shown in figure 4, luminous member
The light that part 2 is sent under 50% distribution of light intensity there is a far field angle to be more than 120 degree.One embodiment of the invention by
The bonding layer 21 with graded index is formed between transparency carrier 20 and semiconductor light emitting lamination 23, makes light from luminescent layer
On the direct of travel of 24 directive transparency carriers 20, light in each bonding layer, such as the first bonding layer 211 and the second bonding layer 212,
Become big with the critical angle θ c of the junction of transparency carrier 20, reduce light and reflex to semiconductor light emitting lamination 23 and absorbed, make light
Easily from transparency carrier 20 and the side wall S2 light extractions of bonding layer 21, and the more existing light-emitting component 1 of light type of light-emitting component 2 can be made full
It is full.
The light-emitting component of the second embodiment of the present invention is gone on to say below.This second embodiment is above-mentioned Fig. 3 embodiments
Change type, thus second embodiment implementation, can be to the semiconductor light emitting lamination 23 and transparency carrier in above-mentioned Fig. 3 embodiments
20 engagement, which is done, to be strengthened, therefore is continued and illustrated using Fig. 3.To strengthen connecing for semiconductor light emitting lamination 23 and transparency carrier 20
Close, in the present embodiment, selection forms the second bonding layer 212 with the identical material of transparency carrier 20.For example, in the present embodiment
In, transparency carrier 20 is sapphire (sapphire) substrate, and the material of the second bonding layer 212 then selective oxidation aluminium (Al2O3)。
Described in first embodiment above, because semiconductor light emitting lamination 23 is III-V race's semi-conducting material, its first folding having
Penetrate rate n1About between 3.0~3.6, and transparency carrier 20 selects sapphire (sapphire) substrate, therefore transparency carrier 20 is had
The second refractive index n2About 1.7.And the second bonding layer 212 is because of selection and the identical material of transparency carrier 20, i.e. aluminum oxide
(Al2O3), therefore in the present embodiment, the refractive index n of the second bonding layer 212b2The second refractive index n having with transparency carrier 202Greatly
Cause equal (i.e. nb2=n2), also about 1.7.And as described in above-mentioned first embodiment, due to the second folding of transparency carrier 20
Penetrate rate n2With the first refractive index n of semiconductor light emitting lamination 231Larger (equally differing more than 1 in the present embodiment) is differed, to reduce
The probability of light total reflection, first bonding layer 211 of the present embodiment equally also make bonding layer 21 in semiconductor in material selection
Luminous formation one between lamination 23 and transparency carrier 20 makes the structure of gradually changed refractive index, that is, the refractive index of the first bonding layer 211
nb1Must be between the first refractive index n of semiconductor light emitting lamination 231With the refractive index n of the second bonding layer 212b2Between, so that semiconductor
Luminous lamination 23 forms a consecutive variations or a graded on refractive index with transparency carrier 20 through bonding layer 21.So
In the present embodiment, first refractive index n possessed by the first semiconductor layer 221, the second refractive index possessed by transparency carrier 20
n2, the first bonding layer 211 has a refractive index nb1, and refractive index n possessed by the second bonding layer 212b2, each refractive index meet with
Lower relational expression:n1>nb1>nb2=n2.The material of first bonding layer 211 can include titanium dioxide (TiO2), tantalum oxide (Ta2O5), two
Tellurium oxide (TeO2), yittrium oxide (Y2O3), hafnium oxide (HfO2), aluminum oxide (Al2O3), indium zinc oxide (IZO), tin indium oxide
Or lithium niobate (LiNbO (ITO)3)。
And what deserves to be explained is, when the material selection of the first bonding layer 211 in the present embodiment further makes the first engagement
The refractive index n of layer 211b1, the first refractive index n of the first semiconductor layer 221, and the second refractive index n of transparency carrier 202Meet with
Lower relational expression:(n1*n2)1/2+0.3≥nb1≥(n1*n2)1/2When -0.3, it is possible to find above-mentioned complete to reduce light by gradually changed refractive index
The effect of the probability of reflection is more notable.
Fig. 5 is the light-emitting component of third embodiment of the invention, and this 3rd embodiment is the change type of above-mentioned second embodiment,
Compared to above-mentioned second embodiment, in the present embodiment light-emitting component 2 ' also comprising one the 3rd bonding layer 213 positioned at the second engagement
Between layer 212 and transparency carrier 20, remaining element is then identical with above-mentioned second embodiment, therefore repeats no more.As illustrated, the 3rd
Bonding layer 213 is formed on transparency carrier 20, and its material is identical with the material of the second bonding layer 212.Such as described above
Described in two embodiments, transparency carrier 20 is sapphire (sapphire) substrate, and the material then selective oxidation of the second bonding layer 212
Aluminium (Al2O3), then it is aluminum oxide (Al that material is similarly formed on transparency carrier 202O3) the 3rd bonding layer 213, afterwards by
Three bonding layers 213 engage with the second bonding layer 212.Because the 3rd bonding layer 213 with the second bonding layer 212 is identical material,
Therefore help to increase its engaging force.Can be the chip for including semiconductor light emitting lamination 23 particularly in manufacture craft
(wafer) same manufacture craft board is entered simultaneously with transparency carrier 20 to form the second bonding layer thereon respectively simultaneously
212 with the 3rd bonding layer 213 (such a situation both thickness is roughly the same), then the 3rd bonding layer 213 is connect with second again
Close layer 212 to engage, because both form under identical technological process, be more conducive to the lifting of both adhesive forces.Connect
After conjunction, form one and include the first bonding layer 211, the bonding layer 21 ' of the second bonding layer 212 and the 3rd bonding layer 213 is located at transparent
Between substrate 20 and semiconductor light emitting lamination 23, as it was previously stated, the material phase of the material of the second bonding layer 212 and transparency carrier 20
With and the 3rd bonding layer 213 it is identical with the material of the second bonding layer 212.
To the explanation of 3rd embodiment, being familiar with the personage of this art must select summary first in appropriate material
Under, a light-emitting component is formed, this light-emitting component includes a transparency carrier；The luminous lamination of semiconductor is located on this transparency carrier,
Wherein semiconductor light emitting lamination includes one first semiconductor layer close to transparency carrier, one second semiconductor away from transparency carrier
Layer, and the luminescent layer between the first semiconductor layer and the second semiconductor layer, wherein luminescent layer can send a light；And one
For bonding layer between transparency carrier and semiconductor light emitting lamination, this bonding layer is a laminated construction, comprising being led close to the first half
One first bonding layer of body layer, with one second bonding layer away from the first semiconductor layer.And if the first semiconductor layer has first
Refractive index n1, transparency carrier has the second refractive index n2, the first bonding layer has a refractive index nb1, and the second bonding layer has one
Refractive index nb2, then each refractive index meet relationship below:n1>nb1>nb2≥n2, so except can make semiconductor light emitting lamination with thoroughly
Bright substrate is obtained outside good engagement, more forms a consecutive variations or a graded on refractive index through bonding layer, is made
The light that luminescent layer is sent is on the direct of travel from luminescent layer directive transparency carrier, in each critical of bonding layer and transparency carrier
Angle is all more than 35 degree, promotes light extraction efficiency.In addition, when each refractive index meets (n1*n2)1/2+0.3≥nb1≥(n1*n2)1/2-0.3
Relational expression when, its reduce light total reflection probability effect it is more notable.
Though each schema only corresponds to specific embodiment respectively with explanation more than, however, illustrated by each embodiment or openly
Element, embodiment, design criteria and technical principle except showing mutually conflict, contradiction each other or in addition to being difficult to common implementing,
We when can according to needed for it is any with reference to, exchange, collocation, coordinate or merge.
Although disclosing the present invention with reference to described above, however the scope that it is not intended to limiting the invention, implementation order,
Or the material and manufacture craft used.For the various modifications that the present invention is made and change, spirit of the invention and model are neither taken off
Enclose.
Claims (14)
1. a kind of light-emitting component, Bao Han ︰
Transparency carrier；
At least luminous lamination of semiconductor is located on the transparency carrier, and wherein the semiconductor light emitting lamination is included close to the transparent base
First semiconductor layer of plate, the second semiconductor layer away from the transparency carrier, and positioned at first semiconductor layer and this second half
Luminescent layer between conductor layer, the wherein luminescent layer can send a light；And
Bonding layer, between the transparency carrier and the semiconductor light emitting lamination, the bonding layer is included close to first semiconductor
First bonding layer of layer, wherein first semiconductor layer have first refractive index n1, the transparency carrier has the second refractive index n2,
First bonding layer has refractive index nb1, and respectively the refractive index meets relationship below:(n1*n2)1/2+0.3≥nb1≥(n1*
n2)1/2-0.3。
2. light-emitting component as claimed in claim 1, the wherein bonding layer also include the second bonding layer, second bonding layer has
Second refractive index nb2, and compared with the first bonding layer away from first semiconductor layer.
3. light-emitting component as claimed in claim 2, the wherein bonding layer also include the 3rd bonding layer, positioned at second bonding layer
Between the transparency carrier.
4. light-emitting component as claimed in claim 1, wherein second refractive index n2With first refractive index n1Difference more than 1.
5. the refractive index n of light-emitting component as claimed in claim 2, wherein first bonding layerb1More than second bonding layer
Refractive index nb2And it is less than first refractive index n1, the refractive index n of second bonding layerb2More than second refractive index n2。
6. light-emitting component as claimed in claim 2, wherein first bonding layer include metal oxide with second bonding layer
Material.
A kind of 7. light-emitting component as claimed in claim 6, wherein the first bonding layer at least has metal oxide materials different
In the metal oxide materials of the second bonding layer.
8. light-emitting component as claimed in claim 6, wherein the oxygen that the oxygen content of the first bonding layer is different from the second bonding layer contains
Amount.
9. light-emitting component as claimed in claim 1, wherein first semiconductor layer are one coarse close to the surface of transparency carrier
Face.
10. light-emitting component as claimed in claim 1, wherein comprising multiple semiconductor light emitting laminations, on transparency carrier, lead
Cable architecture make multiple semiconductor light emittings be stacked on this transparency carrier by series, parallel, it is series-parallel in a manner of be electrically connected to each other.
11. light-emitting component as claimed in claim 2, wherein respectively the refractive index meets relationship below:n1>nb1>nb2≥n2。
12. light-emitting component as claimed in claim 2, wherein second refraction of the refractive index of the second bonding layer and transparency carrier
Rate is identical.
13. light-emitting component as claimed in claim 2, the wherein material of second bonding layer include aluminum oxide (Al2O3), this is saturating
Bright substrate is sapphire (sapphire) substrate.
14. light-emitting component as claimed in claim 1, the wherein material of first bonding layer include titanium dioxide (TiO2), oxidation
Tantalum (Ta2O5), tellurium dioxide (TeO2), yittrium oxide (Y2O3), hafnium oxide (HfO2), aluminum oxide (Al2O3), indium zinc oxide
(IZO), tin indium oxide (ITO) or lithium niobate (LiNbO3)。
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| CN201410046186.4A CN103996761B (en) | 2013-02-16 | 2014-02-10 | Light-emitting component |
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| CN2013100512823 | 2013-02-16 | ||
| CN201310051282 | 2013-02-16 | ||
| CN201310051282.3 | 2013-02-16 | ||
| CN201410046186.4A CN103996761B (en) | 2013-02-16 | 2014-02-10 | Light-emitting component |
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