CN110148637A - A kind of solar battery antireflective membrane structure - Google Patents
A kind of solar battery antireflective membrane structure Download PDFInfo
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- CN110148637A CN110148637A CN201910475054.6A CN201910475054A CN110148637A CN 110148637 A CN110148637 A CN 110148637A CN 201910475054 A CN201910475054 A CN 201910475054A CN 110148637 A CN110148637 A CN 110148637A
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- membrane structure
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- 239000012528 membrane Substances 0.000 title claims abstract description 31
- 230000003667 anti-reflective effect Effects 0.000 title claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 238000003980 solgel method Methods 0.000 claims description 2
- 239000006117 anti-reflective coating Substances 0.000 abstract description 11
- 239000011248 coating agent Substances 0.000 abstract description 8
- 238000000576 coating method Methods 0.000 abstract description 8
- 230000003595 spectral effect Effects 0.000 abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 210000004027 cell Anatomy 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The present invention provides a kind of solar battery antireflective membrane structure, is related to technical field of solar batteries.The antireflective coating structure includes the first film layer and the second film layer being sequentially formed in the silicon base of solar battery, first film layer is silicon nitride layer, second film layer is silicon oxycarbide layer, and for the thickness of the first film layer in the range of 50nm to 70nm, the thickness of the second film layer is in the range of 10nm to 30nm.The present invention uses the double-layer reflection-decreasing deielectric-coating being made of silicon nitride layer and silicon oxycarbide layer, by optimizing thicknesses of layers, solar battery can be reduced to the reflection of the following incident light of wavelength 500nm and be lifted at the spectral response of 800nm or more long-wave band, to improve battery efficiency.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of solar battery antireflective membrane structure.
Background technique
PERC (Passivated Emitter and Rear Cell, passivation emitter and back side battery) solar battery
As the product of current photovoltaic market most mainstream, make battery that there is height since its backside oxide aluminium provides excellent passivation effect
Efficiency, high power, to have strong competitiveness on the market.This solar battery front side uses selective emitting electrode structure
Battery can be promoted in the spectral response of short-wave band, while the compound of undoped region is reduced by high square resistance diffusion, promote electricity
Pond assivation property effect, and promoted and open pressure.
For the spectral response for further promoting PERC battery, antireflective coating can be used in solar battery front side.At present
For the solar battery front side antireflective coating of industrialization mainly based on silicon nitride (SiNx) film, multilayered structure is can be set in SiNx film
To reduce the reflection to incident light, SiNx film layer structure reflectivity optimal at present can be down to 3~5%.
However, being difficult to further decrease the reflectivity of solar cell surface by the multilayered structure for optimizing SiNx film.
Summary of the invention
It is an object of the present invention in view of the deficiency of the prior art, provide a kind of solar battery antireflective film
Structure, to solve the problems, such as to be difficult to further decrease the reflectivity of solar cell surface.
To achieve the above object, The technical solution adopted by the invention is as follows:
The present invention provides a kind of solar battery antireflective membrane structure, which includes being sequentially formed at solar battery
Silicon base on the first film layer and the second film layer, the first film layer be silicon nitride layer, the second film layer be silicon oxycarbide layer, the first film
For the thickness of layer in the range of 50nm to 70nm, the thickness of the second film layer is in the range of 10nm to 30nm.
Optionally, the first film layer and the second film layer are prepared by plasma enhanced chemical vapor deposition.
Optionally, the first film layer is by using SiH4And NH3Mixed gas prepared as reaction gas.
Optionally, the second film layer is by using SiH4、CH4And N2The mixed gas of O is prepared as reaction gas.
Optionally, the refractive index of the first film layer is in the range of 2.1 to 2.3.
Optionally, the refractive index of the second film layer is in the range of 1.7 to 1.9.
Optionally, third membrane layer is also formed in the second film layer, third membrane layer is porous silica layer.
Optionally, third membrane layer is prepared by using sol-gel method.
Optionally, the thickness of third membrane layer is in the range of 5nm to 20nm.
Optionally, the refractive index of third membrane layer is in the range of 1.1 to 1.38.
The beneficial effect comprise that
Solar battery antireflective membrane structure provided by the invention includes being sequentially formed in the silicon base of solar battery
The first film layer and the second film layer, the first film layer is silicon nitride layer, and the second film layer is silicon oxycarbide layer, and the thickness of the first film layer exists
In the range of 50nm to 70nm, the thickness of the second film layer is in the range of 10nm to 30nm.The present invention use by silicon nitride layer and
The double-layer reflection-decreasing deielectric-coating that silicon oxycarbide layer is constituted can reduce solar battery to wavelength by optimizing thicknesses of layers
The reflection of 500nm or less incident light and the spectral response for being lifted at 800nm or more long-wave band, to improve battery efficiency.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 shows the structural schematic diagram of conventional solar battery antireflective film；
Fig. 2 shows the structural schematic diagrams for the solar battery antireflective film that one embodiment of the invention provides；
Fig. 3 is shown with solar battery antireflective film provided in an embodiment of the present invention and conventional solar battery anti-reflection
The external quantum efficiency of the solar battery of film is penetrated with wavelength change relational graph；
Fig. 4 show another embodiment of the present invention provides solar battery antireflective film structural schematic diagram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
For the solar battery front side antireflective coating of industrialization at present mainly based on silicon nitride (SiNx) film, SiNx film can be with
Multilayered structure is set to reduce the reflection to incident light.Fig. 1 shows the structural schematic diagram of conventional solar battery antireflective film,
As shown in Figure 1, such as two layers of SiNx film can be set on a silicon substrate to realize the purpose of antireflective.However, passing through optimization
The multilayered structure of SiNx film, it is limited for the reducing effect of reflectivity.
Fig. 2 shows the structural schematic diagrams for the solar battery antireflective film that one embodiment of the invention provides, such as Fig. 2 institute
Show, which includes the first film layer and the second film layer being sequentially formed in the silicon base of solar battery, and the first film layer is nitrogen
SiClx (SiNx) layer, the second film layer are silicon oxide carbide (SiOx (C)) layer, the range of the thickness of the first film layer in 50nm to 70nm
Interior, the thickness of the second film layer is in the range of 10nm to 30nm.
Fig. 3 is shown with solar battery antireflective film provided in an embodiment of the present invention and conventional solar battery anti-reflection
The external quantum efficiency (EQE) of the solar battery of film is penetrated with wavelength change relational graph.In Fig. 3, solid line is with of the invention real
The EQE of the solar battery of SiNx/SiOx (C) double-layer structure antireflective coating of example offer is applied with wavelength change curve, dotted line is
The EQE of solar battery with conventional two layers of SiNx antireflective coating is with wavelength change curve, it can be seen that in 500nm or less
Short-wave band and 800nm or more long-wave band have SiNx/SiOx provided in an embodiment of the present invention (C) double-layer structure antireflective coating
The EQE of solar battery be apparently higher than conventional structure, that is to say, that SiNx/SiOx (C) double-layer structure antireflective coating can mention
High battery efficiency.
It is thick by optimization film layer by using the double-layer reflection-decreasing deielectric-coating being made of silicon nitride layer and silicon oxycarbide layer
Degree can reduce solar battery to the reflection of the following incident light of wavelength 500nm and be lifted at the light of 800nm or more long-wave band
Spectrum response, to improve battery efficiency.
In the embodiment of the present invention, the first film layer and the second film layer can pass through plasma enhanced chemical vapor deposition
(PECVD) it prepares.Specifically, the first film layer (i.e. SiNx layer) is by using SiH4And NH3Mixed gas as PECVD's
It is prepared by reaction gas.Second film layer (i.e. SiOx (C) layer) is by using SiH4、CH4And N2The mixed gas of O is as PECVD's
It is prepared by reaction gas.The refractive index of first film layer is in the range of 2.1 to 2.3.The refractive index of second film layer is 1.7 to 1.9
In the range of.
SiOx (C)/SiNx double layer antireflection coating that the present invention is prepared by PECVD can be by the reflection of front deielectric-coating
Rate is reduced to 1%, while can promote the passivation effect to surface, and pressure is opened in promotion.The present invention is prepared by using PECVD
SiNx/SiOx (C) double layer antireflection coating reduces battery and promotes battery current in the reflection of short-wave band, and then promotes battery efficiency.
In addition, adopting the solar battery of SiNx/SiOx provided by the present invention (C) double layer antireflection coating, imitated using identical conversion
The cell piece of rate has preferably encapsulation CTM (Cell To Module, component than conventional SiNx antireflective coating battery in assembly end
The percentage of output power and cell piece power summation), lifting assembly output power 1.0W.Using provided by the present invention
The battery of SiNx/SiOx (C) double-layer reflection-decreasing film preparation more shades than conventional SiNx antireflective coating battery in appearance, also indicates that
The anti-reflective effect of SiNx/SiOx (C) double layer antireflection coating is more excellent than conventional SiNx antireflective coating.In addition, provided by the invention
The method for preparing SiOx (C) layer is readily integrated into current producing line, without increasing additional equipment.
Optionally, as shown in figure 4, can also be formed with third membrane layer in the second film layer, third membrane layer is porous dioxy
SiClx layer.Porous silica layer usually has lower refractive index, by the way that low-refraction is further arranged in SiOx (C) layer
Porous silica layer can further decrease reflectivity.Third membrane layer (i.e. porous silica layer) can be by using molten
It is prepared by glue-gel method.The thickness of third membrane layer is in the range of 5nm to 20nm.The refractive index of third membrane layer is 1.1 to 1.38
In the range of.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow ordinary skill people
Member can understand the contents of the present invention and be implemented, it is not intended to limit the scope of the present invention, it is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the scope of protection of the present invention.
Claims (10)
1. a kind of solar battery antireflective membrane structure, which is characterized in that the silicon base including being sequentially formed at solar battery
On the first film layer and the second film layer, first film layer is silicon nitride layer, and second film layer is silicon oxycarbide layer, described the
For the thickness of one film layer in the range of 50nm to 70nm, the thickness of second film layer is in the range of 10nm to 30nm.
2. solar battery antireflective membrane structure according to claim 1, which is characterized in that first film layer and described
Second film layer is prepared by plasma enhanced chemical vapor deposition.
3. solar battery antireflective membrane structure according to claim 2, which is characterized in that first film layer is by making
Use SiH4And NH3Mixed gas prepared as reaction gas.
4. solar battery antireflective membrane structure according to claim 2, which is characterized in that second film layer is by making
Use SiH4、CH4And N2The mixed gas of O is prepared as reaction gas.
5. solar battery antireflective membrane structure according to claim 3, which is characterized in that the refraction of first film layer
Rate is in the range of 2.1 to 2.3.
6. solar battery antireflective membrane structure according to claim 4, which is characterized in that the refraction of second film layer
Rate is in the range of 1.7 to 1.9.
7. solar battery antireflective membrane structure according to any one of claim 1 to 6, which is characterized in that described
Third membrane layer is also formed in second film layer, the third membrane layer is porous silica layer.
8. solar battery antireflective membrane structure according to claim 7, which is characterized in that the third membrane layer is by adopting
It is prepared with sol-gel method.
9. solar battery antireflective membrane structure according to claim 7, which is characterized in that the thickness of the third membrane layer
In the range of 5nm to 20nm.
10. solar battery antireflective membrane structure according to claim 8, which is characterized in that the folding of the third membrane layer
Rate is penetrated in the range of 1.1 to 1.38.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910475054.6A CN110148637A (en) | 2019-06-02 | 2019-06-02 | A kind of solar battery antireflective membrane structure |
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| CN201910475054.6A CN110148637A (en) | 2019-06-02 | 2019-06-02 | A kind of solar battery antireflective membrane structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110994189A (en) * | 2019-12-24 | 2020-04-10 | 西安工业大学 | Heterogeneous material structured multilayer thin film wave absorber and manufacturing method thereof |
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