CN204857736U - Solar cell subtracts anti - membrane structure - Google Patents
Solar cell subtracts anti - membrane structure Download PDFInfo
- Publication number
- CN204857736U CN204857736U CN201520611478.8U CN201520611478U CN204857736U CN 204857736 U CN204857736 U CN 204857736U CN 201520611478 U CN201520611478 U CN 201520611478U CN 204857736 U CN204857736 U CN 204857736U
- Authority
- CN
- China
- Prior art keywords
- film
- solar cell
- sionx
- sinx
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model discloses a solar cell subtracts anti - membrane structure, by lower supreme P type silicon, projecting pole and the dielectric layer of including in proper order, P type silicon lower surface adheres to there is al back of the body field, the dielectric layer top distributes and has the electrode, and wherein, this dielectric layer includes the siNx membrane and is located the epimembranal side's of siNx siONx membrane, this kind subtracts the reflection passive film, can improve the surface passivation effect effectively, improves solar battery's conversion efficiency, and this structure can reduce the reflectivity that the battery was set a camera effectively, and then promotes solar cell's short -circuit current, improves the electrical property of battery.
Description
Technical field
The utility model relates to the technology preparing semiconductor crystal silicon solar cell, particularly the surperficial antireflective passive film layer of semiconductor crystal silicon solar cell.
Background technology
Crystalline silicon comprises monocrystalline silicon or polysilicon, and the method for traditional mode of production crystal-silicon solar cell is, first to removing the p-type monocrystalline silicon piece after damage layer or polysilicon chip spreads, thus at its Surface Creation p-n junction.The close surface of this p-n junction is referred to as upper surface usually, or emitter.In order to reduce reflectivity, one deck antireflective film can be plated at the upper surface of solar cell.Current crystal silicon solar enterprise many employings PECVD deposited silicon nitride antireflective coating reaches antireflecting object, and is Multilayer silicon nitride antireflection film at the enterprising one-step optimization in the basis of single-layer silicon nitride film.Because the physical characteristic of silicon nitride own determines, optimum reflectivity can accomplish 5.8% at present.In order to the reflectivity reducing rete further needs the material increasing a kind of more low-refraction at outermost layer to fall anti-object to reach anti-reflection; SiNx/SiONx layer can meet above-mentioned requirements; Simultaneously due to the physical characteristic of SiOx, novel antireflective film has more superior anti-PID performance.
Promote the reflectivity that one of method of crystal-silicon solar cell efficiency is the absorption reduction cell piece increasing battery surface light.The light that solar cell absorbs is more, and the number of photons so producing electron hole pair is more, thus efficiency is also higher.
Utility model content
Utility model object: solve problems of the prior art, providing one can reduce battery effectively to light reflectance, and then promotes the short circuit current of solar cell, improves the solar cell antireflective film structure of the electrical property of battery.
Technical scheme: solar cell antireflective film structure described in the utility model, comprises P-type silicon, emitter and dielectric layer from the bottom to top successively, and described P-type silicon lower surface is attached with Al back surface field; Above described dielectric layer, be distributed with electrode, wherein, this dielectric layer comprises SiNx film and is positioned at the SiONx film above described SiNx film.
Particularly, described SiNx film and SiONx film are monofilm or multilayer film.
Particularly, described SiNx film and SiONx film are 1-5 tunic.
Particularly, the thickness of described SiNx film one deck is 5-80nm.
Particularly, the thickness of described SiONx film one deck is 5-50nm.
Particularly, the thicknesses of layers of described SiNx film and SiONx film is 70-90nm.
Beneficial effect: compared with prior art, the utility model has the advantage of: this antireflective film structure, by distributing combination rationally between rete, makes rete reflectivity optimum, thus increases solar cell to the absorption of light, promote the short circuit current of battery, promote the photoelectric properties of battery further; Secondly, due to the physical characteristic of SiOx own, this rete shows superior anti-PID performance; Again, SiOx film itself has superior passivation effect, in conjunction with SiN
xfilm is at lower floor, SiON
xthe superior antireflective property of film this structure on upper strata can derive and be followed successively by SiO from the bottom to top
xfilm, SiN
xthe structure of film, SiON film, can strengthen passivation effect.
Accompanying drawing explanation
Fig. 1 is existing solar cell antireflective film structural representation;
Fig. 2 is structural representation of the present utility model.
Embodiment
Below in conjunction with the drawings and specific embodiments, illustrate the utility model further.
As shown in Figure 2, solar cell antireflective film structure, comprise P-type silicon 2, emitter 3 and dielectric layer from the bottom to top successively, P-type silicon lower surface is attached with Al back surface field 1; Above above-mentioned dielectric layer, be distributed with electrode 6, wherein, this dielectric layer comprises SiNx film 4 and is positioned at the SiONx film 5 above described SiNx film 4.
Wherein, SiNx film 4 and SiONx film 5 are 1-5 tunic; The thickness of SiNx film 4 one deck is 5-80nm; The thickness of SiONx film 5 one deck is 5-50nm; The thicknesses of layers of SiNx film 4 and SiONx film 5 is 70-90nm; Composite refractive index is determined by each layer refractive index and thickness, ranges of indices of refraction 1.6-2.2.
SiN
xfilm 4 is at lower floor, SiON
xthe preparation process of film 5 this structure on upper strata:
Step 1, SiNx film ground floor: use PECVD device plated film, pass into SiH4, NH3 plated film under certain pressure, radio-frequency power simultaneously;
Step 2, the SiH4 film second layer: use PECVD device plated film, pass into SiH4, NH3 plated film under certain pressure, radio-frequency power simultaneously;
Step 3, SiH4 film n-th layer: use PECVD device plated film, pass into SiH4, NH3 plated film under certain pressure, radio-frequency power simultaneously;
Step 4, SiONx film ground floor: use PECVD device plated film, pass into SiH4, NH3, N simultaneously
2o is plated film under certain pressure, radio-frequency power;
Step 5, the SiONx film second layer: use PECVD device plated film, pass into SiH4, NH3, N simultaneously
2o is plated film under certain pressure, radio-frequency power;
Step 6, SiONx film n-th layer: use PECVD device plated film, pass into SiH4, NH3, N simultaneously
2o is plated film under certain pressure, radio-frequency power.
Said process is by introducing N
2o, as reacting gas, SiNx layer grows the SiONx layer that one deck refractive index is lower, and make reflectivity be reduced to about 4.5% by original 5.8%, current boost is about 100mA.
Embodiment 1
Adopt in multi-wafer and be followed successively by SiN from the bottom to top
xfilm ground floor, SiN
xthe film second layer, SiON
xmembrane structure example: SiN
xfilm ground floor THICKNESS CONTROL at 10-20nm, refractive index 2.2-2.3; SiN
xthe film thickness monitoring of the film second layer is at 25-40nm, and refractive index controls at 2.05-2.10; SiON
xfilm thickness monitoring is at 25-40nm, and refractive index controls at 1.5-1.7; Above-mentioned comprehensive film thickness monitoring is at 75-85nm, and refractive index controls at 1.8-2.15.Film back reflection rate by conventional plated film 5.8% by low be 4.5%, the conventional film of experimental cell sheet current ratio promotes about 100mA, improved efficiency about 0.20% absolute value.
Embodiment 2
Adopt in single-chip and be followed successively by SiN from the bottom to top
xfilm ground floor, SiN
xthe film second layer, SiON
xmembrane structure example: SiN
x1st THICKNESS CONTROL is at 10-20nm refractive index 2.2-2.3; SiN
x2
ndfilm thickness monitoring controls at 2.05-2.10 in 25-40nm refractive index; SiON
xfilm thickness monitoring controls at 1.5-1.7 in 25-40nm refractive index; Comprehensive film thickness monitoring is at 75-85nm, and refractive index controls at 1.8-2.15.Film back reflection rate by conventional plated film 2.4% by low be 1.7%, the conventional film of experimental cell sheet current ratio promotes about 70mA, improved efficiency about 0.15% absolute value.
Claims (6)
1. a solar cell antireflective film structure, is characterized in that: comprise P-type silicon (2), emitter (3) and dielectric layer from the bottom to top successively, described P-type silicon lower surface is attached with Al back surface field (1); Above described dielectric layer, be distributed with electrode (6), wherein, this dielectric layer comprises SiNx film (4) and is positioned at the SiONx film (5) of described SiNx film (4) top.
2. solar cell antireflective film structure according to claim 1, is characterized in that: described SiNx film (4) and SiONx(5) film are monofilm or multilayer film.
3. solar cell antireflective film structure according to claim 2, is characterized in that: described SiNx film (4) and SiONx film (5) are 1-5 tunic.
4. solar cell antireflective film structure according to claim 2, is characterized in that: the thickness of described SiNx film (4) one deck is 5-80nm.
5. solar cell antireflective film structure according to claim 2, is characterized in that: the thickness of described SiONx film (5) one deck is 5-50nm.
6. solar cell antireflective film structure according to claim 2, is characterized in that: the thicknesses of layers of described SiNx film (4) and SiONx film (5) is 70-90nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520611478.8U CN204857736U (en) | 2015-08-13 | 2015-08-13 | Solar cell subtracts anti - membrane structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520611478.8U CN204857736U (en) | 2015-08-13 | 2015-08-13 | Solar cell subtracts anti - membrane structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204857736U true CN204857736U (en) | 2015-12-09 |
Family
ID=54748262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520611478.8U Active CN204857736U (en) | 2015-08-13 | 2015-08-13 | Solar cell subtracts anti - membrane structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204857736U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106486567A (en) * | 2016-11-14 | 2017-03-08 | 苏州阿特斯阳光电力科技有限公司 | A kind of antireflective coating of crystal silicon solar energy battery and preparation method thereof |
| CN113474900A (en) * | 2018-07-05 | 2021-10-01 | 新墨西哥大学雨林创新 | Low cost, crack resistant, screen printable metallization to improve component reliability |
| CN114420770A (en) * | 2022-03-30 | 2022-04-29 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module thereof |
-
2015
- 2015-08-13 CN CN201520611478.8U patent/CN204857736U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106486567A (en) * | 2016-11-14 | 2017-03-08 | 苏州阿特斯阳光电力科技有限公司 | A kind of antireflective coating of crystal silicon solar energy battery and preparation method thereof |
| CN113474900A (en) * | 2018-07-05 | 2021-10-01 | 新墨西哥大学雨林创新 | Low cost, crack resistant, screen printable metallization to improve component reliability |
| CN114420770A (en) * | 2022-03-30 | 2022-04-29 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207320169U (en) | A kind of perovskite battery of graded bandgap | |
| CN104733557B (en) | HIT solar energy battery and method for improving short-circuit current density of HIT battery | |
| CN102534547A (en) | Preparation process for gradient antireflection silicon nitride thin film of crystalline silicon solar cell | |
| CN116093192B (en) | High-current-density combined passivation back contact battery and preparation method thereof | |
| CN204857736U (en) | Solar cell subtracts anti - membrane structure | |
| CN104916710A (en) | High-efficiency polycrystalline multilayer passivation anti-reflection film structure with high PID resistance | |
| CN107068798A (en) | Back contacts heterojunction solar battery and preparation method thereof | |
| CN104752526A (en) | Passivating antireflection film of high PID resistance type polycrystalline cell and preparation process thereof | |
| CN202167497U (en) | Crystalline silicon solar cell | |
| CN101640226B (en) | Lamination structure and thin film solar cell with same | |
| CN102034888A (en) | Thin film solar cell and preparation method thereof | |
| CN201956359U (en) | Antireflective passive film of crystalline silicon solar cell | |
| CN201655812U (en) | Three-layered antireflective passivation film for surfaces of solar cells | |
| CN107342331A (en) | A kind of production technology of T-shaped top electrode back reflection thin film solar cell | |
| CN210668401U (en) | Silicon-based laminated double-sided solar cell | |
| CN104576833A (en) | Method adopting PECVD for preparing back passivation film layer of solar back passivation battery | |
| CN108365029A (en) | A kind of multilayer solar battery containing hexagonal column GaAs photonic crystal absorbed layers | |
| CN102244109B (en) | Anti-reflection coating of crystalline silicon solar cell and preparation method thereof | |
| CN202977429U (en) | Solar cell and anti-reflection film | |
| CN109461776A (en) | A kind of low-cost high-efficiency crystal silicon solar batteries component | |
| CN106611803B (en) | A kind of solar battery group of solar battery sheet, preparation method and its composition | |
| CN202189797U (en) | Solar cell having double-layer antireflection film and solar cell panel | |
| CN203850312U (en) | Heterojunction solar cell with selective emitter | |
| CN204732419U (en) | A kind of high-efficiency polycrystalline multilayer passivated reflection reducing of high PID resistance penetrates membrane structure | |
| CN114628543A (en) | Heterojunction solar cell and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No. 12 Xinhua Road, Xinhua District, Wuxi City, Jiangsu Province, 214028 Patentee after: Wuxi Ritong Photovoltaic Technology Co., Ltd. Address before: No. 12 Xinhua Road, National High-tech Industrial Development Zone, Wuxi City, Jiangsu Province, 214028 Patentee before: WUXI DEXIN SOLAR POWER CO., LTD. |
|
| CP03 | Change of name, title or address |