CN111509091B - Battery edge passivation method - Google Patents
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- CN111509091B CN111509091B CN202010382328.XA CN202010382328A CN111509091B CN 111509091 B CN111509091 B CN 111509091B CN 202010382328 A CN202010382328 A CN 202010382328A CN 111509091 B CN111509091 B CN 111509091B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a battery edge passivation method, which comprises the steps of printing slurry to the edge to be passivated in a crystalline silicon battery in a coating mode, and irradiating the edge by adopting ultraviolet light so as to form a layer of silicon oxide passivation film on the edge under the condition of illumination catalytic oxidation; the slurry contains hydrogen peroxide and SiO2Powder; and after silicon oxide passivation films are formed on all edges needing passivation on the crystalline silicon cell, annealing the crystalline silicon cell which is subjected to light catalytic oxidation. Furthermore, the invention also discloses the application of the method. The invention utilizes the photocatalytic oxidation technology to realize edge passivation on the crystalline silicon solar cell, thereby reducing the electrical recombination and electric leakage at the edge of the cell and improving the photoelectric conversion efficiency of the cell.
Description
Technical Field
The invention belongs to the technical field of solar cell preparation, and particularly relates to a method for realizing cell edge passivation.
Background
The single solar cell is required to be made into a module through series connection and parallel connection to be applied to a photovoltaic system. Since the recombination and leakage at the edge of the solar cell are relatively more severe than other regions of the cell, the electrical properties of the single solar cell and the module are affected, and the power generation performance (power generation amount, stability, reliability and the like) of the photovoltaic system is further affected. It is therefore desirable to electrically isolate and passivate the edges of the solar cell to reduce electrical leakage and recombination at the edges of the cell.
At present, in the processing and manufacturing of crystalline silicon solar cells in the industry, the edge isolation of the cells is generally completed by adopting a chemical etching method, a laser etching method or a plasma etching method. The edge isolation is performed by using a chemical etching method (which can be classified into an acid system solution or an alkali system solution), and the chemical etching reaction of the chemical solution on the edge of the cell is not sufficient, so that the edge isolation effect of the cell is also insufficient, and especially, the difficulty of implementing the edge isolation by using the chemical etching method is increased under the condition that the front side and the back side of the solar cell are both provided with doped junctions (for example, an N-type PERT cell, an N-type TOPCon cell, a P-type PERT or PERL cell and the like). The increased amount of chemical etching required to achieve more adequate cell edge isolation by chemical etching increases cell manufacturing costs and reduces the process window for cell fabrication (since chemical solutions can affect the front and back sides of the cell and over etch them). The edge of the battery is isolated by adopting a laser etching method and a plasma etching method, although the edge isolation effect is relatively sufficient, the edge of the battery is greatly damaged due to the etching damage of a laser processing technology to the silicon material or the bombardment damage of the plasma technology to the silicon material, so that the performance of the battery is necessarily reduced to a certain extent while the edge of the battery is isolated; in order to compensate for the reduced cell performance caused by the laser etching method or the plasma etching method, the solar cell needs to be further edge passivated.
Currently, the industry is lacking research and solutions for edge passivation of solar cells. In the prior art, a commonly adopted solar cell edge passivation method is to simultaneously deposit an antireflection film or a passivation film (generally, silicon nitride, silicon oxide, silicon oxynitride or aluminum oxide) on the edge of a cell when the antireflection film or the passivation film (generally, silicon nitride, silicon oxide, silicon oxynitride or aluminum oxide) is deposited on the front side or the back side of the cell by a Plasma Enhanced Chemical Vapor Deposition (PECVD) technology after the cell has completed chemical etching on the edge. This edge passivation method still has a deficiency in the passivation ability of the cell edge electrical recombination because it is difficult to uniformly control the thickness and quality of the film deposited on the cell edge, and thus the passivation effect is greatly reduced. Moreover, if the cell edge isolation is performed by laser or plasma etching (both processes are usually performed after the cell is manufactured and before the cell is tested and sorted), in this case, the passivation film or the anti-reflection film deposited on the edge of the silicon wafer is also etched away in the laser etching or plasma etching process, which results in the lack of passivation film protection on the cell edge. In all of the above cases, electrical recombination and leakage at the cell edge are increased, thereby reducing the electrical performance, stability and reliability of the photovoltaic module and system.
In recent years, it has become popular in the photovoltaic industry to cut the processed and manufactured whole battery into smaller-area cells, and then assemble these small cells into modules in a manner of tiling, lamination or splicing, so as to better utilize the space of each single cell in the module to improve the power generation performance of the module. The cutting process is usually completed by a laser cutting process, the laser processing process can cause damage to the edge of the cut small cell, particularly the damage accompanied with the laser cutting process when a doped junction (PN junction or high-low junction) or a passivated contact structure (TOPCon cell) on the front side and the back side of the cell is exposed, and the surface of the edge of the cut small cell is not protected by any passivation layer, so that the performance of the small cell is more remarkably reduced, and the loss of the electrical performance of the small cell assembled into a component is further increased. Against the background of such trends, there is a need for good edge passivation techniques for edge passivation of such diced cells.
In view of the above, there is a need for a more efficient method of cell edge passivation to reduce the above-mentioned cell performance loss.
Disclosure of Invention
In order to solve the problems, the invention provides a battery edge passivation method, which utilizes a photocatalytic oxidation technology to realize local oxidation of only the edge area of a battery, thereby realizing the edge passivation of the battery.
The specific technical scheme of the invention comprises the following steps:
the first scheme is as follows: a method of cell edge passivation comprising the steps of:
providing a crystalline silicon cell, wherein the crystalline silicon cell at least has one edge to be passivated, and the edge to be passivated has a bare silicon surface;
printing the slurry to the edge needing passivation in the crystalline silicon cell by adopting a coating modeIrradiating the edge with ultraviolet light to form a layer of silicon oxide passivation film on the edge under the condition of photocatalytic oxidation; the slurry contains hydrogen peroxide and SiO2Powder;
repeating the operation on the other edge needing to be passivated until all the edges needing to be passivated on the crystalline silicon cell form a silicon oxide passivation film (called a silicon oxide film for short);
annealing the crystalline silicon cell after the illumination catalytic oxidation is completed so as to improve the compactness of the silicon oxide passivation film;
and after annealing treatment, completing the edge passivation of the crystalline silicon cell.
As a preferable scheme, the preparation method of the slurry comprises the following steps: adding SiO into solution containing 20-60 wt% of hydrogen peroxide2Powder until gel is formed, and finally, the binder is added and uniformly stirred to form slurry.
The method of claim 2, wherein the SiO is2The particle size of the powder is 0.1-1 micron.
As a preferred option, ultraviolet light in the wavelength range of 200-300 nm is generated by an ultraviolet lamp.
As a preferable scheme, the temperature of the annealing treatment is 100-200 ℃, and the time is 1-30 min. More preferably, the temperature range of the annealing treatment is 130-170 ℃, and the time is 5-10 min.
As a preferable scheme, a rapid thermal treatment furnace is adopted to carry out annealing treatment on the crystalline silicon cell after the photocatalytic oxidation by illumination, and the atmosphere of the thermal treatment is nitrogen.
Preferably, the thickness of the silicon oxide passivation film is 5-50 nm. More preferably, the thickness of the silicon oxide passivation film is 10 to 30 nm.
Scheme II: providing an application of the first scheme, and applying the first scheme to the edge passivation of a cut battery; or after the silicon substrate emitter junction is manufactured and before the front antireflection film and the back passivation film are manufactured in the crystalline silicon solar cell manufacturing process.
The third scheme is as follows: and providing a crystalline silicon cell, wherein at least one edge of the crystalline silicon cell is provided with a layer of silicon oxide passivation film, and the silicon oxide passivation film is manufactured by adopting the cell edge passivation method adopted in the first scheme or the preferred scheme thereof.
The invention has the following beneficial effects:
1) the silicon oxide film prepared at the edge of the cell by the method has high compactness and uniform and controllable thickness, so that the edge of the cell can be fully and effectively passivated, the electrical recombination and the electric leakage of the edge of the cell can be reduced, the open-circuit voltage and the short-circuit current of the cell can be improved, and the photoelectric conversion efficiency of the cell can be improved; and local passivation is only carried out on the cell edge through local contact of the paste, so that the oxidation of the front side and the back side of the cell in the edge passivation process is avoided.
2) Can be applied to batteries of any size, including whole sheets (generally applied before the front and back antireflection film and passivation film coating processes); small pieces (e.g., half, third, sixth, etc., may be used for bare cut edge passivation) may be used in assembly designs such as shingles, laminations, tiles, and the like. After the battery with fully and effectively passivated edges is packaged into a module, the power generation performance (generated energy, stability, reliability and the like) of the photovoltaic module and the photovoltaic system can be greatly improved due to low edge leakage and low recombination.
3) The thickness of the silicon oxide film growing on the edge can be controlled by controlling parameters such as light source power, illumination time, oxidant concentration content in the slurry, slurry thickness and the like, so as to meet different process requirements and improve the edge passivation effect, or reduce the process time, thereby reducing the production and manufacturing cost.
4) The operation method is simple, and the process is pollution-free.
Drawings
FIG. 1 is a schematic view of the operating principle of photocatalytic oxidation.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following will provide specific embodiments of a method for passivating an edge of a battery according to the present invention with reference to the accompanying drawings. It is to be understood that the disclosed embodiments are merely exemplary of the invention, and not restrictive. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a battery edge passivation method, which is to use a coating method to passivate the edge of a battery containing hydrogen oxide (H)2O2) The slurry is coated on the edge of the battery, and then the edge of the battery is subjected to light treatment with corresponding wavelength, so that the photocatalytic oxidation is realized, and thus, only the edge area of the battery is locally oxidized (namely, the front side and the back side of the battery are not influenced), and further, the good passivation of the edge of the battery is realized. Wherein the oxidant (and the photocatalyst) is a slurry containing hydrogen peroxide, and the corresponding light wavelength range of the photocatalyst is 100-400 nm.
Since each photocatalyst (and in the present method also the oxidizing agent) will gain enough energy to cause excitation in a range of wavelengths of light, there will also be a peak of highest excitation intensity, which corresponds to the optimal excitation wavelength. Therefore, it is necessary to select a light source near its peak wavelength range according to its specific excitation spectrum, thereby obtaining an optimal photocatalytic effect. In addition, the optical properties of each photocatalyst (oxidant) are different, and the selection of the optimal wavelength light source is carried out according to the specific excitation spectrum, and the selection of the light source is only related to the type of the oxidant and is not interfered by other factors such as concentration, formula and the like. In the method of the present invention, the selection of the wavelength of the light source needs to be matched to the particular oxidant species.
In the above scheme, the oxidizing agent (and also the photocatalyst) is hydrogen peroxide, which is present in the form of a slurry. The preparation process comprises the following steps: firstly preparing 20-60 wt% of H2O2100 ml of the solution, then SiO was continuously added to the solution210-20 g of powder (the particle diameter of the powder is 0.1-1 micron) until gel is formed, and finally, 1-3 g of resin (binder) is added and evenly stirred to form slurry. Against peroxygenThe specific property of hydrogen hydride can generate catalytic reaction under the irradiation of ultraviolet rays, the wavelength range can be 200-300 nm, and the light source can be an ultraviolet lamp. After the slurry containing hydrogen peroxide is coated on the edge of the battery, rapid edge oxidation can be realized only by irradiating the area with local ultraviolet light, and the irradiation time is usually between 2 min and 10 min.
In order to form a more dense silicon oxide passivation film, after completion of the above-mentioned photocatalytic oxidation, it is necessary to subject the silicon wafer or the cell to a heat treatment, and here, a rapid thermal processing furnace may be directly used to carry out a heat treatment at a certain temperature and a certain belt speed. The temperature is controlled between 100 ℃ and 200 ℃ (preferably 130 ℃ and 170 ℃), the time is usually 1-30 min (usually 2-10 min), and the thickness of the finally formed silicon oxide film is 5-50 nm (usually 10-30 nm).
The battery edge passivation method disclosed by the invention has two specific applications in practical application: if the method is applied to a crystalline silicon solar cell production line for preparing the cell, the cell edge passivation method can be placed before plating an antireflection film and a passivation film on the front side and the back side of the cell so as to realize good passivation on the four edges of the cell; if the method is applied to the condition of cutting the prepared finished battery into small batteries, the edge passivation method can be directly adopted after laser cutting to realize good passivation of the laser cutting edge.
The invention is further illustrated below with reference to specific embodiments and the accompanying drawings.
Example 1 discloses a method for passivating the edge of a battery, which is used in the process of manufacturing the battery, and the step can be considered to be arranged after the emitter junction of a silicon substrate is manufactured and before an antireflection film and a passivation film are manufactured on the front surface and the back surface, so that the other steps in manufacturing the battery are not affected. The method specifically comprises the following steps:
a1: preparing oxidant (photocatalyst), namely slurry containing hydrogen peroxide, wherein the main components are hydrogen peroxide and SiO2Powder and the like. The method comprises the following specific steps: firstly preparing 30 wt% of H2O2100 ml of the solution, then SiO was continuously added to the solution2Powder 15 g(the particle size of the powder is 0.2 micron) until gel is formed, and finally, 2 g of resin (binder) is added and uniformly stirred to form slurry.
A2: after a phosphorus emitter junction (or a boron emitter junction) is manufactured on a silicon substrate, a wet-process edge-removing chemical etching process is adopted to etch phosphorus-silicon glass (or borosilicate glass), an oxide layer and the emitter junction on the edge of a silicon wafer as completely as possible, so that silicon on the edge of the silicon substrate is exposed outside.
It should be noted that, in the present invention, the oxidant needs to react with the exposed silicon on the surface of the crystalline silicon cell, so when the present invention is applied to the semi-finished cell, the phosphorosilicate glass, the borosilicate glass, the oxide layer, etc. on the edge of the semi-finished cell need to be removed first, so that the silicon on the edge of the silicon substrate is exposed. In practice, it can be generally determined whether the phosphorosilicate glass (or borosilicate glass) and the oxide layer on the edge of the silicon wafer are completely removed through the edge dehydration speed, and whether the emitter junction on the edge of the silicon wafer is completely etched is determined by combining the leakage level of the finished solar cell.
A3: the prepared silicon wafer was placed on a coating tape, one side of which was parallel to the contact surface and coated with the slurry, and the thickness of the edge slurry after coating was about 3 nm. After the coating of the edge is finished, the silicon wafer is rotated through an automatic manipulator, the uncoated edge of the silicon wafer is continuously contacted with the coating belt, the operation is repeated until the four edges of the battery are completely coated, the operation is performed with illumination, and hydrogen peroxide in the slurry can perform a rapid oxidation reaction with silicon through photocatalytic oxidation. And then putting the silicon wafer into a rapid thermal treatment furnace for nitrogen annealing treatment, and after annealing, drying the slurry, volatilizing organic components in the slurry, and simultaneously enabling the silicon oxide film to be more compact, wherein the thickness of the finally formed silicon oxide passivation film is about 20 nm. The coating and photocatalytic oxidation process scheme is that the thickness of slurry is 3 nm, the temperature required by the coating environment is as follows: 25 ℃, humidity: 35 percent. H2O2/SiO2Slurry, light source wavelength of 200-300 nm, illumination power of 200W, illumination time: and 5 min. The annealing process scheme is as follows: annealing at 150 deg.CThe fire time was 10 min and the nitrogen flow was 10000 sccm.
And finally, passivating the edge of the silicon wafer. And then, performing subsequent front and back surface passivation and metallization according to a specific battery preparation process flow to finish battery preparation.
By this method, a sufficiently effective edge passivation can be achieved before the front and back side passivation of the semi-finished cell. The method is simple and pollution-free, and the high-quality silicon oxide film with controllable thickness can be prepared by controlling the power of a light source and the illumination time. If the power of the light source is increased or the illumination time is prolonged, a correspondingly thicker silicon oxide film is finally obtained, and generally, the thicker the silicon oxide film is, the better the passivation effect is. And the method does not have any mechanical damage, chemical corrosion and oxidation to the non-edge area of the silicon wafer.
b1: preparing oxidant (photocatalyst), namely slurry containing hydrogen peroxide, wherein the main components are hydrogen peroxide and SiO2Powder and the like. The method comprises the following specific steps: firstly preparing 30 wt% of H2O2100 ml of the solution, then SiO was continuously added to the solution215 g of powder (the particle size of the powder is 0.2 micron) until gel is formed, and finally 2 g of resin (binder) is added and uniformly stirred to form slurry.
B2: a156 mm-156 mm n-type single crystal silicon cell is selected and laser cut to form a half-chip (also called half-chip). Of course, a third, a fourth, … …, a N-th cut piece, etc. may be used.
B3: placing the prepared cut battery half piece on a coating belt, coating the coating belt with the slurry on the parallel contact surface of the cutting edge, wherein the thickness of the slurry on the edge after coating is about 5 nm; then, the light irradiation is carried out, the hydrogen peroxide in the slurry can carry out the rapid oxidation reaction with the silicon through the photocatalytic oxidation, and then the battery half piece is put into a rapid thermal treatment furnace for the nitrogen annealing treatment. The slurry can be dried by low-temperature nitrogen annealingAnd volatilizing the organic components in the slurry, and simultaneously enabling the silicon oxide film to be more compact, wherein the thickness of the finally formed silicon oxide passivation film is about 25 nm. The coating and photocatalytic oxidation process scheme is that the thickness of slurry is 5 nm, and the temperature is as follows: 25 ℃, humidity: 35% of H2O2/SiO2Slurry, light source wavelength of 200-300 nm, light power of 300W, light time: for 10 min. The annealing process scheme is as follows: the annealing temperature is 150 ℃, the annealing time is 10 min, and the nitrogen flow is 10000 sccm.
To this end, edge passivation of the cut cell is completed. By this method, a sufficiently effective edge passivation of the cut edge can be achieved after the battery has been cut. The method has no pollution in process, and can prepare the high-quality silicon oxide film with controllable thickness by controlling the power of a light source and the illumination time, wherein generally, the thicker the silicon oxide film is, the better the passivation effect is. And does not have any mechanical damage, chemical corrosion and oxidation to the non-edge area of the silicon wafer.
In the steps A3 and B3, the photocatalytic oxidation property of hydrogen peroxide is utilized to effectively increase the oxidation rate of the silicon wafer. Hydrogen peroxide can absorb light with a specific wavelength to obtain enough activation energy, and is directly cracked to generate a large amount of reaction intermediates, and the reaction intermediates are adsorbed on the surface of the silicon wafer to be oxidized when contacting the silicon wafer; the continuous light irradiation can keep the adsorption continuously, and also provides enough reaction activation energy, so that the oxidation reaction of the silicon wafer can be rapidly and effectively carried out. And through setting the light source power, the illumination time, the concentration content of the oxidant in the slurry and the thickness of the slurry, the thickness control of the silicon oxide film can be realized so as to meet different process requirements and improve the edge passivation effect, or reduce the process time (thereby reducing the production and manufacturing cost). The silicon oxide film can be more compact by combining the photocatalytic oxidation in the steps A3 and B3 and then carrying out low-temperature nitrogen annealing, so that a good passivation effect is realized.
The above steps a3 and B3 can be specifically carried out by a coating apparatus, as shown in fig. 1, first coating the four sides of the cell (or only the cut sides of the cut cell) with the aforementioned slurry containing hydrogen peroxide, and then irradiating the edges of the silicon wafer or cell with light by means of a light source installed at an appropriate position in the apparatus, thereby carrying out photocatalytic oxidation. It should be emphasized that the illumination may be performed simultaneously when coating four edges of the silicon wafer or the battery, or may be performed after the four edges (or cutting edges) of the silicon wafer or the battery are all coated, and it is possible to perform the illumination no matter from the design of the process method or the design of the equipment model; wherein simultaneous illumination increases throughput from an industrial manufacturing perspective.
In addition, it should be noted that, the above embodiments all refer to rectangular battery pieces, but in practical application, it may also be square (or rectangular) battery pieces with one or several chamfers, or other irregular pieces, and the shape of the battery pieces does not affect the implementation of the above process, and only in the manufacturing process, each side is sequentially contacted with the solution, and the chamfer at the edge chamfer can be very small in size, so that in practical operation, edge passivation may not be performed on the chamfer.
The method provided by the invention can realize fully effective oxidation passivation only at the edge of the cell, and can not oxidize other areas (namely the front side and the back side of the silicon wafer or the cell) except the edge of the cell. The method not only effectively protects the battery edge, but also reduces the electric leakage and the electrical recombination of the area; in addition, in the whole process, because the silicon wafer or the battery is only partially contacted with the chemical liquid level, no mechanical damage and chemical etching can be caused to the non-contact area, and the high-level electrical performance of the battery is also ensured.
The cell edge passivation method provided by the invention is not only suitable for being applied to a whole solar cell; and also suitable for diced solar cells (such as half-piece, third-piece, sixth-piece, etc.), so that the diced cells with better edge passivation performance can be applied to assembly designs such as tiling, lamination, splicing, etc. By the method, the edge leakage and recombination loss of the battery can be effectively reduced, so that the electrical performance, stability and reliability of the battery, the assembly and the system are effectively improved. The whole process is simple and pollution-free, and can be suitable for various crystalline silicon solar cell structures (for implementing edge passivation); the method can also meet different process requirements and improve the edge passivation effect through the design and process optimization of the thickness of the silicon oxide film, or reduce the process time (thereby reducing the production and manufacturing cost).
Finally, it should be noted that while the above describes exemplifying embodiments of the invention with reference to the accompanying drawings, the invention is not limited to the embodiments and applications described above, which are intended to be illustrative and instructive only, and not limiting. Those skilled in the art, having the benefit of this disclosure, may effect numerous modifications thereto without departing from the scope of the invention as defined by the appended claims.
Claims (10)
1. A method of passivating a cell edge, comprising the steps of:
providing a crystalline silicon cell, wherein the crystalline silicon cell at least has one edge to be passivated, and the edge to be passivated has a bare silicon surface;
printing the slurry to the edge to be passivated in the crystalline silicon cell by adopting a coating mode, and irradiating the edge by adopting ultraviolet light so as to form a layer of silicon oxide passivation film on the edge under the condition of photocatalytic oxidation by illumination; the slurry contains hydrogen peroxide and SiO2Powder;
after silicon oxide passivation films are formed on all edges needing to be passivated on the crystalline silicon cell, annealing the crystalline silicon cell which is subjected to light catalytic oxidation;
and after annealing treatment, completing the edge passivation of the crystalline silicon cell.
2. The method of claim 1, wherein the slurry is formulated by: adding SiO into solution containing 20-60 wt% of hydrogen peroxide2Powder until gel is formed, and finally, the binder is added and uniformly stirred to form slurry.
3. The method of claim 1, wherein the ultraviolet light is generated by an ultraviolet lamp in the wavelength range of 200 and 300 nm.
4. The method as claimed in claim 1, wherein the annealing temperature is 100-200 ℃ and the annealing time is 1-30 min.
5. The method as claimed in claim 4, wherein the annealing temperature is 130-170 ℃ and the annealing time is 5-10 min.
6. The method as claimed in claim 1, wherein the crystalline silicon cell subjected to photocatalytic oxidation by light is subjected to annealing treatment using a rapid thermal treatment furnace in an atmosphere of nitrogen gas.
7. The method of claim 1, wherein the silicon oxide passivation film has a thickness of 5 to 50 nm.
8. The method of claim 7, wherein the silicon oxide passivation film has a thickness of 10 nm to 30 nm.
9. The method of any one of claims 1 to 8, applied to edge passivation of cut cells; or after the silicon substrate emitter junction is manufactured and before the front antireflection film and the back passivation film are manufactured in the crystalline silicon solar cell manufacturing process.
10. A crystalline silicon cell having a silicon oxide passivation film on at least one side, the silicon oxide passivation film being formed by the cell edge passivation method as claimed in any one of claims 1 to 8.
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| CN112687763B (en) * | 2020-12-28 | 2022-12-09 | 天合光能股份有限公司 | Preparation method of passivated contact crystalline silicon cell |
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