CN111564530B - Novel crystalline silicon PERC battery front oxide layer preparation process - Google Patents

Novel crystalline silicon PERC battery front oxide layer preparation process Download PDF

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CN111564530B
CN111564530B CN202010519116.1A CN202010519116A CN111564530B CN 111564530 B CN111564530 B CN 111564530B CN 202010519116 A CN202010519116 A CN 202010519116A CN 111564530 B CN111564530 B CN 111564530B
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preparation process
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oxide layer
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CN111564530A (en
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杨飞飞
李雪方
张波
鲁贵林
赵科魏
郭丽
吕爱武
杜泽霖
李陈阳
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Shanxi Luan Solar Energy Technology Co Ltd
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Abstract

The invention relates to the field of crystalline silicon PERC battery passivation. A novel crystalline silicon PERC cell front oxide layer preparation process is carried out according to the process procedures of cleaning and texturing, diffusion and junction making, back etching, double-sided aluminum oxide preparation, front silicon nitride film preparation, back laser grooving and front and back electrode preparation; in the preparation process of the double-sided aluminum oxide, a silicon wafer is inserted into an aluminum flower basket, TMA and water vapor are circularly introduced, and a layer of 3-5nm aluminum oxide film is respectively prepared on the front surface and the back surface of the silicon wafer; in the preparation process of the front silicon nitride film, a silicon wafer with double-sided alumina is put into a graphite boat, silicon nitride is prepared in a tubular PECVD (plasma enhanced chemical vapor deposition), NH3 and N2 gases are introduced, a radio frequency source is switched on, the front alumina film layer is knocked off by high-energy plasmas, and meanwhile, a silicon oxide layer is formed.

Description

Novel crystalline silicon PERC battery front oxide layer preparation process
Technical Field
The invention relates to the field of crystalline silicon PERC battery passivation.
Background
At present, the passivation of the front surface of the PERC cell uses a silicon oxide passivation technology, the back surface uses aluminum oxide as a basic passivation film, in the specific preparation process, the front silicon oxide layer is realized by thermal oxidation, the back aluminum oxide is deposited by ALD and PECVD methods, the preparation of the front silicon oxide layer and the preparation of the back aluminum oxide layer are independently carried out, the equipment cost is high, and in the thermal oxidation process of the front silicon oxide layer, the thermal damage of the silicon substrate caused by high temperature is serious.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to avoid the thermal oxidation process in the preparation process of the front silicon oxide layer and avoid the thermal damage of the silicon substrate caused by the high-temperature process.
The technical scheme adopted by the invention is as follows: a novel crystalline silicon PERC cell front oxide layer preparation process is carried out according to the process procedures of cleaning and texturing, diffusion and junction making, back etching, double-sided aluminum oxide preparation, front silicon nitride film preparation, back laser grooving and front and back electrode preparation; in the preparation process of the double-sided aluminum oxide, a silicon wafer is inserted into an aluminum flower basket, TMA and water vapor are circularly introduced, and a layer of 3-5nm aluminum oxide film is respectively prepared on the front surface and the back surface of the silicon wafer; in the preparation process of the front silicon nitride film, a silicon wafer with double-sided alumina is put into a graphite boat, silicon nitride is prepared in a tubular PECVD (plasma enhanced chemical vapor deposition), NH3 and N2 gases are introduced, a radio frequency source is switched on, the front alumina film layer is knocked off by high-energy plasmas, and meanwhile, a silicon oxide layer is formed.
The specific process of the double-sided alumina preparation process comprises the following steps: preparing a double-sided alumina film layer with the thickness of 3-5nm and the refractive index of 1.6-1.65 by using ALD equipment, wherein TMA and H2O are periodically introduced in the preparation process, the TMA introduction flow rate is 15-20sccm, the reaction time is 2.5-3.5s, and the purging time is 6-8 s; H2O was introduced at a flow rate of 15-20sccm for 32 cycles with a reaction time of 2.5-3.5s and a purge time of 10-15 s.
The specific process of the front silicon nitride film preparation process comprises the following steps: preparing silicon nitride in a tubular PECVD (plasma enhanced chemical vapor deposition), firstly performing pretreatment, and introducing NH3 and N2, wherein the pressure in the tube is 2000-2500mTorr, the temperature is 400-450 ℃, the power is 12000-14000W, the pulse on-off ratio is 1:10, NH3/N2= 1: 1-3: 1, and the time is 180-250 s; then NH3 and SiH4 are introduced, the pressure is 1000-2000mTorr, the temperature is 450-500 ℃, the power is 11000-13000W, the pulse on-off ratio is 1:12, the introduced SiH4/NH3 = 1/4-1/10, and the time is 550-650 s.
The invention has the beneficial effects that: the process technology for preparing the crystalline silicon PERC cell not only reduces the conventional PERC preparation process and the manufacturing cost, but also improves the performance of the crystalline silicon cell. In the preparation process of the aluminum oxide, the chemical passivation effect of the silicon oxide formed on the surface of the silicon substrate is far better than that of the silicon oxide prepared by thermal oxidation. The invention utilizes the characteristics and adopts the process technology for preparing the double-sided aluminum oxide to simultaneously realize the passivation of the SiOx and the AlOx on the front surface and the back surface of the battery through one procedure. The method has the advantages of low cost and simple process, avoids damage of high-temperature thermal oxidation to the silicon wafer, and solves the problem that metal burning-through is difficult in the metallization process of the front surface aluminum oxide. Most importantly, the front oxide layer formed by AlOx preparation has an order of magnitude lower surface defect density than a thermally oxidized silicon oxide layer.
Detailed Description
The front surface of the battery of the embodiment is sequentially provided with a silicon oxide layer, a silicon nitride layer and a positive electrode; the back surface is sequentially provided with an aluminum oxide layer, a silicon nitride layer and a back electrode.
In the invention, silicon oxide on the front surface of the crystalline silicon PERC cell is formed by using positive PECVD ion bombardment after double-sided aluminum oxide deposition. The preparation method comprises the following steps:
cleaning and texturing by adopting the prior process. The texture etching uses alkali texture etching, the etching amount is controlled to be 0.4-0.6g, and the reflectivity is 7% -12%.
And (4) diffusion and junction making by adopting the existing process.
And etching by adopting the existing process. And (3) using alkali etching, wherein the etching amount is controlled to be 0.14-0.17g, and the reflectivity is 35% -45%.
And (3) preparing double-sided alumina. And preparing a double-sided aluminum oxide film layer with the thickness of 3-5nm and the refractive index of 1.6-1.65 by using ALD equipment. In the preparation process, TMA and H2O are periodically introduced, wherein the TMA introduction flow is 15-20sccm, the reaction time is 2.5-3.5s, and the purging time is 6-8 s; H2O was introduced at a flow rate of 15-20sccm for 32 cycles with a reaction time of 2.5-3.5s and a purge time of 10-15 s.
And preparing a front silicon nitride film. Preparing silicon nitride in a tubular PECVD (plasma enhanced chemical vapor deposition), firstly performing pretreatment, and introducing NH3 and N2, wherein the pressure in the tube is 2000-2500mTorr, the temperature is 400-450 ℃, the power is 12000-14000W, the pulse on-off ratio is 1:10, NH3/N2= 1: 1-3: 1, and the time is 180-250 s; then NH3 and SiH4 are introduced, the pressure is 1000-2000mTorr, the temperature is 450-500 ℃, the power is 11000-13000W, the pulse on-off ratio is 1:12, the introduced SiH4/NH3 = 1/4-1/10, and the time is 550-650 s.
The preparation of the back silicon nitride film adopts the prior art.
And (3) laser film opening is carried out on the back surface, and the existing process is adopted.
The front and back electrodes are prepared by the existing process.
The invention provides a novel preparation process of a front oxide layer of a crystalline silicon PERC battery, which is characterized in that an etched silicon wafer is subjected to double-sided alumina preparation, then a front surface alumina layer is removed through pretreatment of positive PECVD (plasma enhanced chemical vapor deposition), and a silicon oxide layer in contact with a silicon substrate is reserved. The preparation process has the advantages of simple process, low cost and excellent battery performance. The front oxidation layer formed by AlOx preparation is higher than the silicon oxide layer grown by thermal oxidation, the surface defect density is lower by one order of magnitude, and the conversion efficiency of the battery is improved by nearly 0.3 percent.

Claims (3)

1. A novel crystalline silicon PERC battery front oxide layer preparation process is characterized in that: the method comprises the following steps of cleaning and texturing, diffusing and knotting, back etching, double-sided aluminum oxide preparation, front silicon nitride film preparation, back laser grooving and front and back electrode preparation; in the preparation process of the double-sided aluminum oxide, a silicon wafer is inserted into an aluminum flower basket, TMA and water vapor are circularly introduced, and a layer of 3-5nm aluminum oxide film is respectively prepared on the front surface and the back surface of the silicon wafer; in the preparation process of the front silicon nitride film, a silicon wafer with double-sided alumina is put into a graphite boat, silicon nitride is prepared in a tubular PECVD (plasma enhanced chemical vapor deposition), NH3 and N2 gases are introduced, a radio frequency source is switched on, the front alumina film layer is knocked off by high-energy plasmas, and meanwhile, a silicon oxide layer is formed.
2. The process of claim 1 for preparing a novel crystalline silicon PERC cell pre-oxide layer, wherein: the specific process of the double-sided alumina preparation process comprises the following steps: preparing a double-sided alumina film layer with the thickness of 3-5nm and the refractive index of 1.6-1.65 by using ALD equipment, wherein TMA and H2O are periodically introduced in the preparation process, the TMA introduction flow rate is 15-20sccm, the reaction time is 2.5-3.5s, and the purging time is 6-8 s; H2O was introduced at a flow rate of 15-20sccm for 32 cycles with a reaction time of 2.5-3.5s and a purge time of 10-15 s.
3. The process of claim 1 for preparing a novel crystalline silicon PERC cell pre-oxide layer, wherein: the specific process of the front silicon nitride film preparation process comprises the following steps: preparing silicon nitride in a tubular PECVD (plasma enhanced chemical vapor deposition), firstly performing pretreatment, and introducing NH3 and N2, wherein the pressure in the tube is 2000-2500mTorr, the temperature is 400-450 ℃, the power is 12000-14000W, the pulse on-off ratio is 1:10, NH3/N2= 1: 1-3: 1, and the time is 180-250 s; then NH3 and SiH4 are introduced, the pressure is 1000-2000mTorr, the temperature is 450-500 ℃, the power is 11000-13000W, the pulse on-off ratio is 1:12, the introduced SiH4/NH3 = 1/4-1/10, and the time is 550-650 s.
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CN112760614B (en) * 2020-12-09 2023-02-28 晋能清洁能源科技股份公司 Method for optimizing uniformity of polycrystalline PECVD (plasma enhanced chemical vapor deposition) coating
CN112838143A (en) * 2020-12-31 2021-05-25 横店集团东磁股份有限公司 Deposition method of aluminum oxide film in PERC battery

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2484801A1 (en) * 2011-02-07 2012-08-08 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of deposition of Al2O3/SiO2 stacks, from TMA or TEA and silicon precursors
CN105185851A (en) * 2015-09-06 2015-12-23 浙江晶科能源有限公司 Back passivation solar cell and preparation method thereof
CN106409989A (en) * 2016-12-16 2017-02-15 中利腾晖光伏科技有限公司 N-type double-faced solar cell and preparation method thereof
CN106601588A (en) * 2016-12-06 2017-04-26 湖南红太阳光电科技有限公司 Manufacturing method of silicon oxide passivation layer
CN107887453A (en) * 2017-10-10 2018-04-06 横店集团东磁股份有限公司 A kind of two-sided aluminum oxide p-type PERC solar cells and preparation method
CN109244184A (en) * 2018-09-12 2019-01-18 江苏顺风新能源科技有限公司 A kind of PERC double-side cell of two-sided aluminium oxide structure and preparation method thereof
CN109994553A (en) * 2019-04-30 2019-07-09 通威太阳能（成都）有限公司 Three layers of dielectric passivation film PERC solar cell of one kind and manufacture craft
CN110061101A (en) * 2019-05-13 2019-07-26 山西潞安太阳能科技有限责任公司 A kind of new and effective battery back passivation technology
CN110459615A (en) * 2019-08-19 2019-11-15 通威太阳能（成都）有限公司 A kind of composite dielectric passivation layer structure solar cell and its preparation process
CN110828607A (en) * 2019-08-27 2020-02-21 横店集团东磁股份有限公司 Preparation method of high-conversion-efficiency SE-PERC solar cell
CN110931601A (en) * 2019-11-27 2020-03-27 通威太阳能（安徽）有限公司 Method for improving PID (proportion integration differentiation) resistance of crystalline silicon solar cell

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2484801A1 (en) * 2011-02-07 2012-08-08 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of deposition of Al2O3/SiO2 stacks, from TMA or TEA and silicon precursors
CN105185851A (en) * 2015-09-06 2015-12-23 浙江晶科能源有限公司 Back passivation solar cell and preparation method thereof
CN106601588A (en) * 2016-12-06 2017-04-26 湖南红太阳光电科技有限公司 Manufacturing method of silicon oxide passivation layer
CN106409989A (en) * 2016-12-16 2017-02-15 中利腾晖光伏科技有限公司 N-type double-faced solar cell and preparation method thereof
CN107887453A (en) * 2017-10-10 2018-04-06 横店集团东磁股份有限公司 A kind of two-sided aluminum oxide p-type PERC solar cells and preparation method
CN109244184A (en) * 2018-09-12 2019-01-18 江苏顺风新能源科技有限公司 A kind of PERC double-side cell of two-sided aluminium oxide structure and preparation method thereof
CN109994553A (en) * 2019-04-30 2019-07-09 通威太阳能（成都）有限公司 Three layers of dielectric passivation film PERC solar cell of one kind and manufacture craft
CN110061101A (en) * 2019-05-13 2019-07-26 山西潞安太阳能科技有限责任公司 A kind of new and effective battery back passivation technology
CN110459615A (en) * 2019-08-19 2019-11-15 通威太阳能（成都）有限公司 A kind of composite dielectric passivation layer structure solar cell and its preparation process
CN110828607A (en) * 2019-08-27 2020-02-21 横店集团东磁股份有限公司 Preparation method of high-conversion-efficiency SE-PERC solar cell
CN110931601A (en) * 2019-11-27 2020-03-27 通威太阳能（安徽）有限公司 Method for improving PID (proportion integration differentiation) resistance of crystalline silicon solar cell

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