CN111584666A - Novel P-type crystalline silicon cell structure and preparation process thereof - Google Patents
Novel P-type crystalline silicon cell structure and preparation process thereof Download PDFInfo
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 229910020286 SiOxNy Inorganic materials 0.000 claims abstract description 17
- 229910020776 SixNy Inorganic materials 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229910015845 BBr3 Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract description 7
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract description 7
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the field of production of P-type crystalline silicon batteries. A novel P-type crystalline silicon cell structure comprises a back film layer structure from bottom to top of SixNy/SiOxNy/BSG/P + +, wherein a P-type silicon body is arranged on the film, the thickness of the P + + layer is 100 nm, and the doping concentration of the back surface of the silicon body is 1x 10-19‑5*1019/cm‑3Between BSG film thickness of 3-5nm and doping concentration of 3x1020‑5*1020/cm‑3SiOxNy has a refractive index of 1.7-2.0 and a thickness of 3-5nm, SixNy has a refractive index of 2.1-2.3 and a thickness of 120-150 nm. The invention also relates to a preparation process. The invention provides a high-efficiency battery technical route suitable for a P-type crystalline silicon battery, and compared with the existing PERC battery, the high-efficiency PERC battery has the advantages of high conversion efficiency, low investment cost, short upgrading period and quick response.
Description
Technical Field
The invention relates to the field of production of P-type crystalline silicon batteries.
Background
Currently, the mainstream product of the P-type crystalline silicon battery is a PERC battery, and through the rapid development of nearly 2-3 years, the PERC product is mature and meets the technical bottleneck. In the next generation of high-efficiency batteries, N-type crystalline silicon becomes a focus, but no matter N-type TOPCon or HIT products, the equipment investment is large at present, key materials and equipment cannot be completely produced nationwide, the investment return period is long, and the risk is large.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to find a future high-efficiency battery technology direction which is suitable for a P-type crystalline silicon battery and can replace a PERC battery, the overlapping degree of the future high-efficiency battery technology direction and the current technology is high, the preparation of the whole line process can be completed through simple transformation or upgrading, and the manufacturing cost and the investment risk are reduced.
The technical scheme adopted by the invention is as follows: a novel P-type crystalline silicon cell structure comprises a back film layer structure from bottom to top of SixNy/SiOxNy/BSG/P + +, wherein a P-type silicon body is arranged on the film, the thickness of the P + + layer is 100 nm, and the doping concentration of the back surface of the silicon body is 1x 10-19-5*1019/cm-3Between BSG film thickness of 3-5nm and doping concentration of 3x1020-5*1020/cm-3SiOxNy has a refractive index of 1.7-2.0 and a thickness of 3-5nm, SixNy has a refractive index of 2.1-2.3 and a thickness of 120-150 nm.
A novel P-type crystalline silicon cell structure preparation process is carried out by the following steps
Step one, preparing a back P + + and BSG film layer, adopting a boron diffusion mode, introducing a process gas BBr3, a carrying gas N2 and a reaction gas O2 into a quartz furnace tube, depositing a layer of BSG at a high temperature, then propelling the BSG in the atmosphere of N2 and O2 to form a P + + layer with the back of the silicon wafer, wherein the thickness of the P + + layer is 100-200nm, and the doping concentration of the back surface of the silicon substrate is 1x1019-5*1019/cm-3Between BSG film thickness of 3-5nm and doping concentration of 3x1020-5*1020/cm-3。
And step two, back cleaning. The edge and back BSG are cleaned.
Step three, preparing a back SixNy/SiOxNy film layer, namely depositing SiOxNy in a PECVD mode, wherein an oxygen source is N2O, and meanwhile introducing silane (SiH 4) and NH3 to obtain SiOxNy with the refractive index of 1.7-2.0 and the thickness of 3-5 nm; SixNy deposition, SixNy prepared by SiH4 and NH3, has a refractive index of 2.1-2.3 and a thickness of 120-150 nm.
x and y represent atomic ratios, which refer to taking positive real numbers.
The invention has the beneficial effects that: the invention provides a high-efficiency battery technical route suitable for a P-type crystalline silicon battery, and compared with the existing PERC battery, the high-efficiency PERC battery has the advantages of high conversion efficiency, low investment cost, short upgrading period and quick response.
Drawings
FIG. 1 is a schematic diagram of a backside film structure of a P-type crystalline silicon cell according to the present invention.
Detailed Description
Referring to FIG. 1, a novel P-type crystalline silicon cell structure and process for fabricating the same, wherein the backside film structure is SixNy/SiOxNy/BSG/P + + from bottom to top, wherein BSG/P + + is formed by boron diffusion, the thickness of the P + + layer is 100 nm, the doping concentration near the back surface of the silicon substrate is 1x1019-5x1019/cm-3BSG film thickness of 3-5nm, doping concentration of 3x1020-5x1020/cm-3(ii) a The SixNy/SiOxNy film is deposited by using PECVD equipment, the refractive index of the SiOxNy is 1.7-2.0, the thickness is 3-5nm, the refractive index of the SixNy is 2.1-2.3, the thickness is 120-150nm, and the total thickness of the lamination is 125-155 nm.
The specific preparation process comprises the following steps:
1. and (5) cleaning and texturing. The texture etching uses alkali texture etching, the etching amount is controlled to be 0.4-0.6g, and the reflectivity is 7% -12%.
2. And (4) diffusion and junction making.
3. And (5) etching. And (3) using alkali etching, wherein the etching amount is controlled to be 0.14-0.17g, and the reflectivity is 35% -45%.
4. And (4) high-temperature oxidation.
5. And preparing a front silicon nitride film. The silicon nitride is prepared in a tubular PECVD (plasma enhanced chemical vapor deposition) mode, the refractive index is 2.03-2.10, and the film thickness is 75-80 nm.
6. Preparing a back P + + and BSG film layer. Introducing N2 at a flow rate of 25slm by adopting a boron diffusion mode, heating to 900 ℃, and waiting for 8 min; then respectively introducing 25slm of N2, 200 plus 400sccm of N2-BBr3 and 150 plus 300sccm of O2, and carrying out variable temperature deposition at the temperature of 900 plus 960 ℃ for 8-15 min; then, after the temperature is raised to 960 ℃, introducing 6-10slm of N2 and 4-6slm of O2, and carrying out high-temperature propulsion for 5-10 min; finally, 10slm of N2 is introduced, and the temperature is reduced and the boat is returned from 960-840 ℃.
7. And (4) back cleaning. The edge and back BSG are cleaned. A1 vol% mixed solution of HF, 49% in stock solution concentration, and H2O was prepared, and the reaction time was 1 min.
8. And preparing a back SixNy/SiOxNy film layer. Using PECVD equipment, depositing SiOxNy under the pressure of 1500-; SixNy is deposited under the pressure of 1000-2000mTorr, the temperature of 450-500 ℃, the power of 11000-13000W, the pulse on-off ratio of 1:12, the flowing SiH4/NH3 = 1/4-1/10 and the time of 800-1200 s.
9. And laser grooving on the back.
10. Screen printing and high-temperature sintering.
Claims (2)
1. A new P-type crystal silicon battery structure is characterized in that: the back film layer structure is SixNy/SiOxNy/BSG/P + + from bottom to top, wherein a P-type silicon body is arranged on the film, the thickness of the P + + layer is 100 nm, and the doping concentration of the back surface of the silicon body is 1x1019-5*1019/cm-3Between BSG film thickness of 3-5nm and doping concentration of 3x1020-5*1020/cm-3SiOxNy has a refractive index of 1.7-2.0 and a thickness of 3-5nm, SixNy has a refractive index of 2.1-2.3 and a thickness of 120-150 nm.
2. A new process for manufacturing a P-type crystalline silicon cell structure of claim 1, characterized in that: the preparation process of the back film layer structure is carried out by the following steps
Step one, preparing a back P + + and BSG film layer, adopting a boron diffusion mode, introducing a process gas BBr3, a carrying gas N2 and a reaction gas O2 into a quartz furnace tube, depositing a layer of BSG at a high temperature, then propelling the BSG in the atmosphere of N2 and O2 to form a P + + layer with the back of the silicon wafer, wherein the thickness of the P + + layer is 100-200nm, and the doping concentration of the back surface of the silicon substrate is 1x1019-5*1019/cm-3Between BSG film thickness of 3-5nm and doping concentration of 3x1020-5*1020/cm-3；
Step two, back cleaning, namely cleaning the edge and the back BSG;
step three, preparing a back SixNy/SiOxNy film layer, namely depositing SiOxNy in a PECVD mode, wherein an oxygen source is N2O, and meanwhile introducing silane (SiH 4) and NH3 to obtain SiOxNy with the refractive index of 1.7-2.0 and the thickness of 3-5 nm; SixNy deposition, SixNy prepared by SiH4 and NH3, has a refractive index of 2.1-2.3 and a thickness of 120-150 nm.
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Cited By (2)
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| CN112071959A (en) * | 2020-09-24 | 2020-12-11 | 山西潞安太阳能科技有限责任公司 | Novel P-type crystalline silicon battery back contact passivation preparation process |
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Application publication date: 20200825 |