CN112071919A - Novel P-type crystalline silicon TOPCon battery structure and preparation process thereof - Google Patents
Novel P-type crystalline silicon TOPCon battery structure and preparation process thereof Download PDFInfo
- Publication number
- CN112071919A CN112071919A CN202011015384.6A CN202011015384A CN112071919A CN 112071919 A CN112071919 A CN 112071919A CN 202011015384 A CN202011015384 A CN 202011015384A CN 112071919 A CN112071919 A CN 112071919A
- Authority
- CN
- China
- Prior art keywords
- temperature
- silicon
- novel
- topcon
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052796 boron Inorganic materials 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 14
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical group [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 8
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 235000013842 nitrous oxide Nutrition 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 229910020776 SixNy Inorganic materials 0.000 abstract description 7
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract description 6
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract description 6
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract description 2
- 238000004804 winding Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 16
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910015845 BBr3 Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to the field of solar cell production. A novel P-type crystal silicon TOPCon battery structure is provided, the back of the P-type crystal silicon TOPCon battery is provided with a silicon nitride layer SixNy, a boron-doped silicon oxide layer SiOx (B) and a silicon dioxide layer (SiO)2). The invention also relates to a preparation process of the novel P-type crystalline silicon TOPCon battery structure. The invention not only has high compatibility with the current P-type PERC battery processing technology and small equipment investment, but also solves the problem of boron doping winding degree, and the product yield in the manufacturing process is up to more than 98%.
Description
Technical Field
The invention relates to the field of solar cell production.
Background
At present, the mainstream product of the crystalline silicon battery is the PERC battery, the production process is simple, the manufacturing cost is low, the conversion efficiency of the stacked LDSE battery can reach more than 22.5%, but the subsequent efficiency growth space is limited, and the continuous development of the PERC battery is influenced to a greater extent.
During the SNEC exhibition in 2019, TOPCon batteries were open and have received focus of industry. The TOPCon technology is to prepare an ultra-thin tunneling oxide layer and a highly doped polysilicon thin layer on the back of a battery, and the ultra-thin tunneling oxide layer and the highly doped polysilicon thin layer form a passivation contact structure together. The structure can block minority carrier hole recombination and improve the open-circuit voltage and the short-circuit current of the battery.
In terms of process, the TOPCon technology only needs to add thin film deposition equipment and can be well compatible with the current mass production process. Meanwhile, the TOPCon battery has a space for further improving the conversion efficiency and is expected to become an entry point of the next-generation industrialized N-type high-efficiency battery. According to theoretical calculations, the potential efficiency of a passivated contact solar cell (28.7%) is closest to the theoretical ultimate efficiency of a crystalline silicon solar cell (29.43%).
Similar to the PERC cell, the TOPCon cell also employs a passivated contact structure on the back side, enhancing cell performance. Also in terms of process, TOPCon cells achieve a large increase in efficiency at a small cost. In addition, the future efficiency improvement space of the TOPCon battery is huge, and the TOPCon battery is one of the batteries closest to the theoretical efficiency value of the crystalline silicon battery.
Disclosure of Invention
The invention provides a P-type crystalline silicon TOPCon battery structure and a preparation process thereof, which effectively solve the problem of low conversion efficiency of the conventional P-type PERC battery and have low manufacturing cost and small equipment investment.
The technical scheme adopted by the invention is as follows: a novel P-type crystal silicon TOPCon battery structure is provided, the back of the P-type crystal silicon TOPCon battery is provided with a silicon nitride layer SixNy, a boron-doped silicon oxide layer SiOx (B) and a silicon dioxide layer from bottom to topSilicon layer (SiO)2）。
The silicon nitride layer has a thickness of 70-80nm and a refractive index of 2.1-2.3.
The thickness of the boron-doped silicon oxide layer is 50-100 nm.
The thickness of the silicon dioxide layer is 3-5nm, and the refractive index is 1.5-1.7.
A preparation process of a novel P-type crystalline silicon TOPCon battery structure comprises the following steps
Step one, depositing a silicon dioxide layer by adopting a PECVD (plasma enhanced chemical vapor deposition) mode, wherein an oxygen source is laughing gas, the pressure is 1800-2000mTorr, the temperature is 450-500 ℃, the power is 5000-8000W, the pulse on-off ratio is 1:20, the flow of the laughing gas is 4000-8000sccm, and the time is 50-100 s; (ii) a
Step two, adopting a PECVD mode, the pressure is 1500-2000mTorr, the temperature is 450-500 ℃, the power is 10000-12000W, the pulse on-off ratio is 1:16, and SiH is introduced4Introducing nitrogen at a flow rate of 25slm by adopting a boron diffusion mode, heating to 900 ℃ for 8min, then respectively introducing 25slm nitrogen, 200 plus 400sccm boron tribromide (carried by the nitrogen) and 150 plus 300sccm oxygen, performing variable temperature deposition at 960 ℃ for 5-10min, and then introducing 6-10slm nitrogen and 4-6slm oxygen after the temperature is raised to 960 ℃, and performing high temperature propulsion for 3-5 min; finally, 10slm of nitrogen is introduced, the temperature is reduced and the boat is returned from 960 ℃ to 840 ℃, and the boron concentration in the doped silicon oxide is 3x1021-5x1021/cm-3；
Cleaning the back, cleaning the edge and the part BSG on the back, preparing mixed solution with the volume concentration of 1% by using HF and water with the volume concentration of 49%, and reacting for 0.5 min;
step four, adopting a PECVD mode, depositing at the pressure of 1000-2000mTorr, the temperature of 450-500 ℃, the power of 11000-13000W and the pulse on-off ratio of 1:12, and introducing SiH4/NH3The ratio is 1/10-1/4, and the time is 800-1200 s.
The invention provides a process route for realizing a P-type TOPCon battery, which not only has high compatibility with the current P-type PERC battery processing process and small equipment investment, but also solves the problem of boron doping degree of winding, and the product yield in the manufacturing process is up to more than 98%.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Detailed Description
The invention relates to a novel P-type crystalline silicon TOPCon battery structure, wherein the back film structure is SixNy/SiOx (B)/SiO2 from bottom to top, wherein the SiOx (B) in the middle is a film with a certain boron doping concentration. Wherein the inner layer SiOx/SiO2 is deposited by PECVD equipment, the refractive index of the prepared SiO2 is 1.5-1.7, and the thickness is 3-5 nm; preparing the obtained SiOx, and depositing the SiOx in an SiH-rich 4 atmosphere, wherein the refractive index of the SiOx is 1.5-1.7, and the thickness of the SiOx is 50-100 nm; and the outer layer SixNy is deposited by using PECVD equipment, and the refractive index of the prepared SixNy is 2.1-2.3, and the thickness is 70-80 nm.
The specific preparation process comprises the following steps:
and (5) cleaning and texturing. The texture etching uses alkali texture etching, the etching amount is controlled to be 0.4-0.6g, and the reflectivity is 7% -12%.
And (4) diffusion and junction making.
And etching the back surface. And (3) using alkali etching, wherein the etching amount is controlled to be 0.14-0.17g, and the reflectivity is 35% -45%.
And (4) high-temperature oxidation.
And preparing a front silicon nitride film. The silicon nitride is prepared in a tubular PECVD (plasma enhanced chemical vapor deposition) mode, the refractive index is 2.03-2.10, and the film thickness is 75-80 nm.
Preparation of back SiOx (B)/SiO2 film layer. Using PECVD equipment to deposit SiO2, wherein the pressure is 1800-2000mTorr, the temperature is 450-500 ℃, the power is 5000-8000W, the pulse on-off ratio is 1:20, the flow of the passed N2O is 4000-8000sccm, and the time is 50-100s when SiO2 is deposited; when SiOx is deposited, the pressure is 1500-2000mTorr, the temperature is 450-500 ℃, the power is 10000-12000W, the pulse on-off ratio is 1:16, the introduced SiH4/N2O = 2/1-4/1, and the time is 400-800 s.
And preparing the back interlayer SiOx boron doping. Introducing N2 at a flow rate of 25slm by adopting a boron diffusion mode, heating to 900 ℃, and waiting for 8 min; then respectively introducing 25slm of N2, 200 plus 400sccm of N2-BBr3 (meaning BBr3 flow carried in nitrogen is 200 plus 400 sccm) and 150 plus 300sccm of O2, and carrying out variable temperature deposition from 900 plus 960 ℃ for 8-15 min; then, after the temperature is raised to 960 ℃, introducing 6-10slm of N2 and 4-6slm of O2, and carrying out high-temperature propulsion for 5-10 min; finally, 10slm of N2 is introduced, and the temperature is reduced and the boat is returned from 960-840 ℃.
And (4) back cleaning. The edge and back portions BSG are cleaned. A mixed solution of HF with a stock solution concentration of 49% and H2O with a volume concentration of 1% was prepared, and the reaction time was 0.5 min.
And preparing a back SixNy film layer. By adopting a PECVD mode, the pressure is 1000-2000mTorr, the temperature is 450-500 ℃, the power is 11000-13000W, the pulse on-off ratio is 1:12, the introduced SiH4/NH3 = 1/4-1/10, and the time is 800-1200s when SixNy is deposited.
Screen printing and high-temperature sintering.
Claims (5)
1. A novel P type crystal silicon TOPCon battery structure which characterized in that: the back surface of the P-type crystal silicon TOPCon cell is provided with a silicon nitride layer, a boron-doped silicon oxide layer and a silicon dioxide layer from bottom to top.
2. The novel P-type crystalline silicon TOPCon cell structure as claimed in claim 1, wherein: the silicon nitride layer has a thickness of 70-80nm and a refractive index of 2.1-2.3.
3. The novel P-type crystalline silicon TOPCon cell structure as claimed in claim 2, wherein: the thickness of the boron-doped silicon oxide layer is 50-100 nm.
4. The novel P-type crystalline silicon TOPCon cell structure as claimed in claim 3, wherein: the thickness of the silicon dioxide layer is 3-5nm, and the refractive index is 1.5-1.7.
5. A process for preparing the novel P-type crystalline silicon TOPCon cell structure of claim 1, wherein: the preparation process of the back of the P-type crystal silicon TOPCon battery comprises the following steps
Step one, depositing a silicon dioxide layer by adopting a PECVD (plasma enhanced chemical vapor deposition) mode, wherein an oxygen source is laughing gas, the pressure is 1800-2000mTorr, the temperature is 450-500 ℃, the power is 5000-8000W, the pulse on-off ratio is 1:20, the flow of the laughing gas is 4000-8000sccm, and the time is 50-100 s; (ii) a
Step two, adopting a PECVD mode, the pressure is 1500-2000mTorr, the temperature is 450-500 ℃, the power is 10000-12000W, the pulse on-off ratio is 1:16, and SiH is introduced4The nitrogen O is 2-4, the time is 400-800s, a boron diffusion mode is adopted, firstly nitrogen is introduced at the flow rate of 25slm, the temperature is raised to 900 ℃, the time is waited for 8min, then 25slm of nitrogen, 200-400sccm of boron tribromide and 150-300sccm of oxygen are respectively introduced, the temperature-changing deposition is carried out at the temperature of 900-960 ℃ for 5-10min, then, after the temperature is raised to 960 ℃, 6-10slm of nitrogen and 4-6slm of oxygen are introduced, the high-temperature propulsion is carried out for 3-5 min; finally, 10slm of nitrogen is introduced, the temperature is reduced and the boat is returned from 960 ℃ to 840 ℃, and the boron concentration in the doped silicon oxide is 3x1021-5x1021/cm-3；
Cleaning the back, cleaning the edge and the part BSG on the back, preparing mixed solution with the volume concentration of 1% by using HF and water with the volume concentration of 49%, and reacting for 0.5 min;
step four, adopting a PECVD mode, depositing at the pressure of 1000-2000mTorr, the temperature of 450-500 ℃, the power of 11000-13000W and the pulse on-off ratio of 1:12, and introducing SiH4/NH3The ratio is 1/10-1/4, and the time is 800-1200 s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011015384.6A CN112071919A (en) | 2020-09-24 | 2020-09-24 | Novel P-type crystalline silicon TOPCon battery structure and preparation process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011015384.6A CN112071919A (en) | 2020-09-24 | 2020-09-24 | Novel P-type crystalline silicon TOPCon battery structure and preparation process thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112071919A true CN112071919A (en) | 2020-12-11 |
Family
ID=73683547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011015384.6A Pending CN112071919A (en) | 2020-09-24 | 2020-09-24 | Novel P-type crystalline silicon TOPCon battery structure and preparation process thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112071919A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115377252A (en) * | 2022-10-24 | 2022-11-22 | 英利能源发展(天津)有限公司 | Method for inhibiting polycrystalline silicon surface explosion film growth by PECVD method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786476A (en) * | 2018-12-27 | 2019-05-21 | 中国科学院宁波材料技术与工程研究所 | It a kind of passivation contact structures and its is applied in silicon solar cell |
| CN110140223A (en) * | 2016-12-12 | 2019-08-16 | 洛桑联邦理工学院 | Silicon heterogenous solar battery and manufacturing method |
| CN110311011A (en) * | 2019-05-17 | 2019-10-08 | 上海神舟新能源发展有限公司 | The production method of solar cell |
-
2020
- 2020-09-24 CN CN202011015384.6A patent/CN112071919A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110140223A (en) * | 2016-12-12 | 2019-08-16 | 洛桑联邦理工学院 | Silicon heterogenous solar battery and manufacturing method |
| CN109786476A (en) * | 2018-12-27 | 2019-05-21 | 中国科学院宁波材料技术与工程研究所 | It a kind of passivation contact structures and its is applied in silicon solar cell |
| CN110311011A (en) * | 2019-05-17 | 2019-10-08 | 上海神舟新能源发展有限公司 | The production method of solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115377252A (en) * | 2022-10-24 | 2022-11-22 | 英利能源发展(天津)有限公司 | Method for inhibiting polycrystalline silicon surface explosion film growth by PECVD method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP4027395A1 (en) | Efficient back passivation crystalline silicon solar cell and manufacturing method therefor | |
| AU2022331906A1 (en) | TOPCon cell, method for manufacturing the same, and electrical device | |
| CN111192935B (en) | Back passivation structure of tubular PERC solar cell and preparation method thereof | |
| CN109461777A (en) | A kind of PERC cell backside passivating structure and preparation method thereof | |
| CN209592050U (en) | A kind of solar cell with passivation layer structure | |
| WO2023202079A1 (en) | Preparation method for solar cell and solar cell | |
| CN111584667A (en) | Novel N-type crystalline silicon TOPCon battery structure and preparation process thereof | |
| CN113097346A (en) | Laminated film passivation structure suitable for back of silicon battery | |
| WO2024066884A1 (en) | Solar cell and manufacturing method therefor | |
| CN115863480A (en) | Preparation method of N-type TOPCon solar cell with multiple doped elements on back surface | |
| CN115084285A (en) | Low-composite tunneling oxidation passivation layer structure and application | |
| CN117199186B (en) | Manufacturing method of N-TOPCon battery | |
| CN112071919A (en) | Novel P-type crystalline silicon TOPCon battery structure and preparation process thereof | |
| CN111584666A (en) | Novel P-type crystalline silicon cell structure and preparation process thereof | |
| CN102969367A (en) | P-type silicon back passive film of crystalline silicon solar cell and preparation method thereof | |
| CN105161547A (en) | Stack film for back passivated solar cell and manufacturing method of stack film and back passivated solar cell | |
| CN218160392U (en) | Solar cell | |
| CN102738248B (en) | Optoelectronic device and method for manufacturing thereof | |
| CN114597267B (en) | TOPCon battery and preparation method thereof | |
| CN114583016A (en) | TOPCon battery and preparation method thereof | |
| CN115548135A (en) | Novel TOPCon solar cell and manufacturing method thereof | |
| CN112447863B (en) | Solar cell and preparation method thereof | |
| CN111584668A (en) | Novel P-type crystalline silicon cell structure and preparation process thereof | |
| CN115132854B (en) | Antireflection film of PERC crystalline silicon solar cell, preparation method and application | |
| CN116913984B (en) | Dielectric layer, preparation method, solar cell and photovoltaic module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201211 |