CN109461777A - A kind of PERC cell backside passivating structure and preparation method thereof - Google Patents
A kind of PERC cell backside passivating structure and preparation method thereof Download PDFInfo
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- CN109461777A CN109461777A CN201811242783.9A CN201811242783A CN109461777A CN 109461777 A CN109461777 A CN 109461777A CN 201811242783 A CN201811242783 A CN 201811242783A CN 109461777 A CN109461777 A CN 109461777A
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- film layer
- passivation film
- oxide
- silicon nitride
- cell backside
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 27
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 27
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 102
- 238000002161 passivation Methods 0.000 claims abstract description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 29
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 230000003647 oxidation Effects 0.000 claims abstract description 6
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 36
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 19
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 239000004411 aluminium Substances 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910017107 AlOx Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a kind of PERC cell backside passivating structures and preparation method thereof.A kind of PERC cell backside passivating structure, including silicon base, it further include the oxide passivated film layer, aluminium oxide passivation film layer and silicon nitride passivation film layer stacked gradually, the oxide passivated film layer is formed in the silicon base, the aluminium oxide passivation film layer is formed in the oxide passivated film layer, and the silicon nitride passivation film layer is formed in the aluminium oxide passivation film layer.The passivation structure on back helps to reduce the silicon substrate surface density of states, has lower internal reflection, and simultaneous oxidation aluminium keeps good passivation effect, promotes battery open circuit voltage and short circuit current, and then promote battery conversion efficiency.
Description
Technical field
The invention belongs to area of solar cell, and in particular to a kind of PERC cell backside passivating structure and its preparation side
Method.
Background technique
Promoting photovoltaic efficiency is the objective that line of solar cells is struggled always in the industry, and battery-end passes through process modification not
Disconnected promotion battery efficiency, p-type PERC monocrystalline silicon battery are one of current most popular monocrystalline high efficiency battery technologies, are passed through
Increase back passivation and laser equipment in conventional producing line and the upgrading of PERC battery can be realized in anti-LID equipment.With it is current
Conventional single manufacture of solar cells line equipment compatibility is high, and equipment cost increases low, the relatively other high-efficiency batteries of process flow
Simply.The most crucial technique of PERC battery is back passivating technique at present, carries on the back passivation effect by being promoted, promotes battery efficiency, mesh
The preceding deposition passivating back film layer structure generally used is aluminium oxide+silicon nitride structure.
PERC battery AlOx/SiNx back passivating technique is mature at present, is difficult on effective percentage by Optimizing Process Parameters
Gain, if not changing film layer structure further promotes passivation effect, the efficiency for improving PERC battery is difficult have breakthrough (to remove
Superimposing technique, such as selective emitter).
Summary of the invention
In view of the above technical problems, the present invention is intended to provide a kind of PERC cell backside passivating structure and preparation method thereof,
The passivation structure on back helps to reduce the silicon substrate surface density of states, has lower internal reflection, and simultaneous oxidation aluminium keeps good
Passivation effect, promote battery open circuit voltage and short circuit current, and then promote battery conversion efficiency.
In order to achieve the above objectives, The technical solution adopted by the invention is as follows:
A kind of PERC cell backside passivating structure, including silicon base further include the oxide passivated film layer stacked gradually, aluminium oxide
Passivation film and silicon nitride passivation film layer, the oxide passivated film layer are formed in the silicon base, the aluminium oxide passivation
Film layer is formed in the oxide passivated film layer, and the silicon nitride passivation film layer is formed in the aluminium oxide passivation film layer.
Further, the oxide passivated film layer with a thickness of 1-2nm, the aluminium oxide passivation film layer with a thickness of
15-25nm, the silicon nitride passivation film layer with a thickness of 110-130nm.
Further, the silicon base is P-type silicon substrate.
Further, the oxide passivated film layer, the aluminium oxide passivation film layer and the silicon nitride passivation film layer point
Not Cai Yong PECVD technique deposit to be formed.
Further, the oxide passivated film layer, the aluminium oxide passivation film layer and the silicon nitride passivation film layer
It deposits and is formed in same cavity.
Further, the oxide passivated film layer is by N2O and SiH4Reaction is formed.
Further, the oxide passivated film layer is by N2O reacts to be formed with silicon base.
The present invention also adopts the following technical scheme that
A kind of preparation method of PERC cell backside passivating structure as described above, in turn includes the following steps:
N is made using PECVD technique2O and SiH4Reactive deposition forms the oxide passivated film layer；
Trimethyl aluminium and N are made using PECVD technique20 reactive deposition forms the aluminium oxide passivation film layer；
Using PECVD technique NH3With SiH4Reactive deposition forms the silicon nitride passivation film layer.
A kind of preparation method of PERC cell backside passivating structure as described above, in turn includes the following steps:
N is made using PECVD technique2O and silicon base reactive deposition form the oxide passivated film layer；
Trimethyl aluminium and N are made using PECVD technique20 reactive deposition forms the aluminium oxide passivation film layer；
Using PECVD technique NH3With SiH4Reactive deposition forms the silicon nitride passivation film layer.
Further, the oxide passivated film layer, the aluminium oxide passivation film layer and the silicon nitride passivation film layer exist
It deposits and is formed in same cavity.
The present invention uses above scheme, has the advantages that compared with prior art
The present invention is further improved film layer passivation by cvd silicon oxide+aluminium oxide+silicon nitride trilamellar membrane structure on a silicon substrate
Effect, this film layer structure help to reduce the silicon substrate surface density of states, have lower internal reflection, and simultaneous oxidation aluminium keeps good
Passivation effect, promote battery open circuit voltage and short circuit current, and then promote battery conversion efficiency.
Detailed description of the invention
It, below will be to attached drawing needed in embodiment description in order to illustrate more clearly of technical solution of the present invention
It is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, general for this field
For logical technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of schematic diagram of PERC cell backside passivating structure according to the present invention.
Wherein, 1, P-type silicon base；2, oxide passivated film layer；3, aluminium oxide passivation film layer；4, silicon nitride passivation film layer.
Specific embodiment
The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawing, so that advantages and features of the invention energy
It is easier to be understood by the person skilled in the art.It should be noted that the explanation for these embodiments is used to help
Understand the present invention, but and does not constitute a limitation of the invention.In addition, involved in the various embodiments of the present invention described below
And to technical characteristic can be combined with each other as long as they do not conflict with each other.
It is described referring to Fig.1, a kind of PERC cell backside passivating structure, including silicon base 1, it further include the oxidation stacked gradually
Silicon passivation film 2, aluminium oxide passivation film layer 3 and silicon nitride passivation film layer 4.Oxide passivated film layer 2, aluminium oxide passivation film layer 3
And silicon nitride passivation film layer 4 is located at the back side of silicon base 1, forms SiOx+AlOx+SiNx structure, is subsequent rear electrode
Production provides basis.The oxide passivated film layer 2 is formed in the silicon base 1, and the aluminium oxide passivation film layer 3 is formed in
In the oxide passivated film layer 2, the silicon nitride passivation film layer 4 is formed in the aluminium oxide passivation film layer 3.The oxidation
Silicon passivation film 2 with a thickness of 1-2nm, the aluminium oxide passivation film layer 3 with a thickness of 15-25nm, the silicon nitride passive film
Layer 4 with a thickness of 110-130nm.The silicon base 1 is P-type silicon substrate 1.
The oxide passivated film layer 2, the aluminium oxide passivation film layer 3 and the silicon nitride passivation film layer 4 are respectively adopted
PECVD technique deposits to be formed.It can be prepared by indirect PECVD method or direct PECVD method.The oxide passivated film layer
2, the aluminium oxide passivation film layer 3 and the silicon nitride passivation film layer 4 deposit formation in same cavity.In the indirect side PECVD
In method, the oxide passivated film layer 2 is by N2O and SiH4Reaction is formed；In direct PECVD method, the oxide passivated film
Layer 2 is by N2O reacts formation with silicon base 1.
A kind of preparation method of PERC cell backside passivating structure as described above (i.e. indirect PECVD method), successively wraps
Include following steps:
N is made using PECVD technique2O and SiH4Reactive deposition forms the oxide passivated film layer 2；
Trimethyl aluminium (TMA) and N are made using PECVD technique20 reactive deposition forms the aluminium oxide passivation film layer 3；
Using PECVD technique NH3With SiH4Reactive deposition forms the silicon nitride passivation film layer 4.
A kind of preparation method of PERC cell backside passivating structure as described above (i.e. direct PECVD method), successively wraps
Include following steps:
N is made using PECVD technique2O and 1 reactive deposition of silicon base form the oxide passivated film layer 2；
Trimethyl aluminium (TMA) and N are made using PECVD technique20 reactive deposition forms the aluminium oxide passivation film layer 3；
Using PECVD technique NH3With SiH4Reactive deposition forms the silicon nitride passivation film layer 4.
In above two preparation method, the oxide passivated film layer 2, the aluminium oxide passivation film layer 3 and the nitridation
Silicon passivation film 4 can deposit formation in same cavity.
The present invention is by improving cvd silicon oxide (SiOx)+aluminium oxide (AlOx)+silicon nitride (SiNx) three on a silicon substrate
Film structure, this film layer structure help to reduce the silicon substrate surface density of states, have lower internal reflection, be formed simultaneously good blunt
Change effect, promotes battery open circuit voltage and short circuit current, and then promote battery conversion efficiency.
The above embodiments merely illustrate the technical concept and features of the present invention, is a kind of preferred embodiment, and purpose exists
It cans understand the content of the present invention and implement it accordingly in person skilled in the art, protection of the invention can not be limited with this
Range.Equivalent transformation or modification made by all principles according to the present invention, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of PERC cell backside passivating structure, including silicon base, it is characterised in that: further include that the silica that stacks gradually is blunt
Change film layer, aluminium oxide passivation film layer and silicon nitride passivation film layer, the oxide passivated film layer to be formed in the silicon base, institute
It states aluminium oxide passivation film layer to be formed in the oxide passivated film layer, the silicon nitride passivation film layer is formed in the aluminium oxide
On passivation film.
2. PERC cell backside passivating structure according to claim 1, it is characterised in that: the oxide passivated film layer
With a thickness of 1-2nm, the aluminium oxide passivation film layer with a thickness of 15-25nm, the silicon nitride passivation film layer with a thickness of 110-
130nm。
3. PERC cell backside passivating structure according to claim 1, it is characterised in that: the silicon base is P-type silicon base
Bottom.
4. PERC cell backside passivating structure according to claim 1, it is characterised in that: the oxide passivated film layer,
The aluminium oxide passivation film layer and the silicon nitride passivation film layer are respectively adopted PECVD technique and deposit to be formed.
5. PERC cell backside passivating structure according to claim 4, it is characterised in that: the oxide passivated film layer,
The aluminium oxide passivation film layer and the silicon nitride passivation film layer deposit formation in same cavity.
6. PERC cell backside passivating structure according to claim 4, it is characterised in that: the oxide passivated film layer by
N2O and SiH4Reaction is formed.
7. PERC cell backside according to claim 4 is passivated mechanism, it is characterised in that: the oxide passivated film layer by
N2O reacts to be formed with silicon base.
8. a kind of preparation method of PERC cell backside passivating structure as described in claim 1, which is characterized in that successively include
Following steps:
N is made using PECVD technique2O and SiH4Reactive deposition forms the oxide passivated film layer；
Trimethyl aluminium and N are made using PECVD technique20 reactive deposition forms the aluminium oxide passivation film layer；
Using PECVD technique NH3With SiH4Reactive deposition forms the silicon nitride passivation film layer.
9. a kind of preparation method of PERC cell backside passivating structure as described in claim 1, which is characterized in that successively include
Following steps:
N is made using PECVD technique2O and silicon base reactive deposition form the oxide passivated film layer；
Trimethyl aluminium and N are made using PECVD technique20 reactive deposition forms the aluminium oxide passivation film layer；
Using PECVD technique NH3With SiH4Reactive deposition forms the silicon nitride passivation film layer.
10. preparation method according to claim 8 or claim 9, it is characterised in that: the oxide passivated film layer, the oxidation
Aluminum passivation film layer and the silicon nitride passivation film layer deposit formation in same cavity.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811242783.9A CN109461777A (en) | 2018-10-24 | 2018-10-24 | A kind of PERC cell backside passivating structure and preparation method thereof |
| PCT/CN2019/091037 WO2020082756A1 (en) | 2018-10-24 | 2019-06-13 | Perc battery back passivation structure and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811242783.9A CN109461777A (en) | 2018-10-24 | 2018-10-24 | A kind of PERC cell backside passivating structure and preparation method thereof |
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| CN109461777A true CN109461777A (en) | 2019-03-12 |
Family
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| CN201811242783.9A Pending CN109461777A (en) | 2018-10-24 | 2018-10-24 | A kind of PERC cell backside passivating structure and preparation method thereof |
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| WO (1) | WO2020082756A1 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110021673A (en) * | 2019-04-18 | 2019-07-16 | 苏州腾晖光伏技术有限公司 | A kind of double-sided solar battery and preparation method thereof |
| CN110112243A (en) * | 2019-06-02 | 2019-08-09 | 苏州腾晖光伏技术有限公司 | Passivation structure on back of solar battery and preparation method thereof |
| CN110112242A (en) * | 2019-05-10 | 2019-08-09 | 苏州腾晖光伏技术有限公司 | A kind of solar battery and a kind of preparation method of solar battery |
| CN110444633A (en) * | 2019-08-01 | 2019-11-12 | 宁波尤利卡太阳能科技发展有限公司 | A kind of preparation method of monocrystalline PERC solar cell |
| CN110699674A (en) * | 2019-10-10 | 2020-01-17 | 湖南红太阳光电科技有限公司 | Method for depositing aluminum oxide by low-frequency PECVD |
| WO2020082756A1 (en) * | 2018-10-24 | 2020-04-30 | 苏州腾晖光伏技术有限公司 | Perc battery back passivation structure and preparation method therefor |
| WO2021036264A1 (en) * | 2019-08-29 | 2021-03-04 | 苏州腾晖光伏技术有限公司 | Anti-reflection film structure and perc cell |
| CN113257927A (en) * | 2021-05-18 | 2021-08-13 | 横店集团东磁股份有限公司 | PERC battery back passivation structure, PERC battery and preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2020082756A1 (en) * | 2018-10-24 | 2020-04-30 | 苏州腾晖光伏技术有限公司 | Perc battery back passivation structure and preparation method therefor |
| CN110021673A (en) * | 2019-04-18 | 2019-07-16 | 苏州腾晖光伏技术有限公司 | A kind of double-sided solar battery and preparation method thereof |
| CN110112242A (en) * | 2019-05-10 | 2019-08-09 | 苏州腾晖光伏技术有限公司 | A kind of solar battery and a kind of preparation method of solar battery |
| CN110112243A (en) * | 2019-06-02 | 2019-08-09 | 苏州腾晖光伏技术有限公司 | Passivation structure on back of solar battery and preparation method thereof |
| CN110444633A (en) * | 2019-08-01 | 2019-11-12 | 宁波尤利卡太阳能科技发展有限公司 | A kind of preparation method of monocrystalline PERC solar cell |
| WO2021036264A1 (en) * | 2019-08-29 | 2021-03-04 | 苏州腾晖光伏技术有限公司 | Anti-reflection film structure and perc cell |
| CN110699674A (en) * | 2019-10-10 | 2020-01-17 | 湖南红太阳光电科技有限公司 | Method for depositing aluminum oxide by low-frequency PECVD |
| CN110699674B (en) * | 2019-10-10 | 2021-12-24 | 湖南红太阳光电科技有限公司 | Method for depositing aluminum oxide by low-frequency PECVD |
| CN113257927A (en) * | 2021-05-18 | 2021-08-13 | 横店集团东磁股份有限公司 | PERC battery back passivation structure, PERC battery and preparation method |
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| WO2020082756A1 (en) | 2020-04-30 |
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Application publication date: 20190312 |