CN101964378A - Method for realizing graded laminated passivation film on back surface of solar cell - Google Patents
Method for realizing graded laminated passivation film on back surface of solar cell Download PDFInfo
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- CN101964378A CN101964378A CN 201010152173 CN201010152173A CN101964378A CN 101964378 A CN101964378 A CN 101964378A CN 201010152173 CN201010152173 CN 201010152173 CN 201010152173 A CN201010152173 A CN 201010152173A CN 101964378 A CN101964378 A CN 101964378A
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- film
- silicon
- silicon chip
- gas
- passivation film
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000002161 passivation Methods 0.000 title claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 239000007789 gas Substances 0.000 claims abstract description 20
- 238000005516 engineering process Methods 0.000 claims abstract description 15
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- 238000003475 lamination Methods 0.000 claims description 13
- 238000005137 deposition process Methods 0.000 claims description 5
- 239000003595 mist Substances 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 abstract description 8
- 230000008021 deposition Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 25
- 230000000694 effects Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to the field of solar cell production method, especially to a method for realizing a laminated passivation film on the back surface of a solar cell. A film is deposited on the backlight surface of a processed solar cell silicon chip according to chemical vapor deposition technology, the mixed gas of SiH4 and N2O is adopted as the gas at the beginning of the deposition, NH3 is gradually added in the process of deposition so that the component of the film is changed from silicon dioxide on the surface of the silicon chip to nitrogen oxide of silicon in the outward direction and then to silicon nitride in the outward direction, and the thickness of the film ranges from 50nm to 300nm. The method has the characteristics of fast deposition speed, high output, being capable of achieving the deposition of a plurality of films at a time, and high tightness of the deposited film. High temperature process is not needed in the technology, the heat budget required is less, and high temperature influence resulted from thermal oxidization is avoided, in addition, such a graded laminated film can effectively reduce interface state caused by the combination of different films, improve thermal stability compared with silicon nitride only, and lessen film stress.
Description
Technical field
The present invention relates to manufacture of solar cells method field, especially realize the method for the gradual lamination passivation film in solar battery back surface.
Background technology
Photovoltaic generation is a very important field during solar energy utilizes, and seeks new technology, new material, new technology, improves battery conversion efficiency, and reducing cost is a current very urgent task.
The conversion efficiency of solar cell is directly related with the photovoltaic electron hole pair of generation, and more electron hole pair means high conversion efficiency, just can be converted into electric energy but have only these to lack when son really is collected.The various defectives of silicon chip and interfacial state all can be very big compound these few sons, reduce final effective conversion efficiency.Can effectively reduce defective and compound trap in the silicon chip by the drawing technology that improves crystal silicon, can improve the life-span of the few son of silicon chip as CZ, FZ etc., realize various body passivation and surface passivation by effective passivating method, improve the capacity gauge of few son, the silicon nitride passivation of rich H is generally adopted in the passivation of front surface, can realize good front surface and good body passivation effect.Present existing back of the body surface passivation method is: 1, aluminium back of the body field passivation, and the method for the practical silk screen printing aluminium back of the body of most at present crystal silicon solar energy batteries field, but its passivation effect is limited; 2, hot growing silicon oxide passivation, the good passivation effect of heat growth silicon dioxide passivation, but it has individual shortcoming, the battery sheet will experience the process of elevated temperature heat growing silicon oxide, this high temperature is usually greater than 800 degree, such high temperature has side effect to the SiNx of front surface, and can reduce the multicrystal life-span, and the process time is also longer; 3, SiNx passivation has good passivation, but this inversion layer can be introduced the field, can form a bypass output current voltage is descended greatly.
Summary of the invention
The technical problem to be solved in the present invention is: for shortcoming and the deficiency that solves above-mentioned existence, provide a kind of method that realizes the gradual lamination passivation film in solar battery back surface, the simple superior performance of the membrane structure of this method.
The technical solution adopted for the present invention to solve the technical problems is: the method that realizes the gradual lamination passivation film in solar battery back surface, carry out deposit film on the surface backlight of silicon chip of solar cell after treatment by the chemical vapor deposition method method, the gas when technology begins to deposit is SiH
4And N
2The mist of O adds NH gradually in deposition process
3Make the component of film become silicon nitride to skin again to the nitrogen oxide that skin becomes silicon by the silicon dioxide of silicon chip surface, on the process silicon chip of making herbs into wool, earlier through after emitter junction diffusion and the edge etching, deposit gradual lamination passivation film at silicon chip surface, carry out follow-up solar battery process at last.
Further, described chemical vapor deposition method method is to deposit at the silicon chip shady face under temperature is 200 °~400 ° condition, does not need the process of high temperature, and required heat budget is few, energy savings.
Described silicon chip is P type or n type single crystal silicon, and the resistivity of silicon chip is 0.2 Ω cm~10 Ω cm, and silicon chip is handled through conventional surface clean and surface structuration earlier.
In order to reach the refractive index of required the best, the gas when the chemical vapor deposition method method begins is SiH
4And N
2The gas that O 1: 10 in proportion~1: 1 advances to mix, in the technology by adding NH gradually
3In the gas that mixes, carry out deposit film by this, make the composition of film by SiO
2Gradual gradually to SiO
yN
z, gradual again to SiN
x
In order to make the speed of deposition fast, effective, the thickness of film is between 50nm~300nm.
The thickness of above-mentioned described film and ratio can realize by regulating sedimentation time and ratio of gas mixture.
In above-mentioned chemical vapor deposition method, the gas when beginning to deposit can also be the mist of silane gas and oxidizing gas, adds oxygen-free nitrogenous gas in deposition process gradually, makes the component layers of film become.
The invention has the beneficial effects as follows, the method for the gradual lamination passivation film in realization solar battery back of the present invention surface, deposition velocity is fast, and the output height can once be realized multiple depositing of thin film, the film density height that deposition is come out.Do not need pyroprocess in the technology, required heat budget is few, has avoided the temperatures involved of thermal oxidation, and the variations in refractive index of gradual film has superior internal reflection rate for the long wave that passes silicon chip.The gradual film of this lamination can reduce the interfacial state of being brought by different film combinations effectively, can effectively reduce coincidence rate more, has more superior passivating back effect.And improved thermal stability compared with simple silicon nitride, reduced membrane stress.
Description of drawings
Fig. 1 is a membrane structure schematic diagram of the present invention.
Embodiment
The present invention is further detailed explanation now.
Realize the method for the gradual lamination passivation film in solar battery back surface, carry out deposit film on the surface backlight of silicon chip of solar cell after treatment by the chemical vapor deposition method method, the gas when technology begins to deposit is SiH
4And N
2The mist of O adds NH gradually in deposition process
3, make the component of film become silicon nitride to skin again to the nitrogen oxide that skin becomes silicon by the silicon dioxide of silicon chip surface.
The chemical vapor deposition method method is to deposit at the silicon chip back side under temperature is 200 °~400 ° condition.Silicon chip is P type or n type single crystal silicon, and the resistivity of silicon chip is 0.2 Ω cm~10 Ω cm.Gas when the chemical vapor deposition method method begins is SiH
4And N
2The gas that O 1: 10 in proportion~1: 1 advances to mix, in the technology by adding NH gradually
3In the gas that mixes.The thickness of film is between 50nm~300nm.
During the invention process, select the p type single crystal silicon sheet, crystal face (100), resistivity is 0.5 Ω cm, through conventional cleaning, surface wool manufacturing then spread then, removes PSG after silicon chip was cut into slices, the edge etching.In the PEVCD technology in the chemical vapor deposition method method of 350 ℃ of low temperature, process frequency is selected 13.56MHZ then, and initial process gas is SiH
4And N
2O mixed by 1: 5, along with the carrying out of PEVCD technology, added NH gradually in mist
3Come deposit film, the composition of film is by SiO in the deposition process
2Change to SiO to skin
yN
z, change to SiN to skin again
x, membrane structure as shown in Figure 1, total film thickness is controlled to be 100nm, and the overall process time is controlled to be 1 minute, makes that the refractive index of film is gradual to 2.8 by 1.5 accordingly from inside to outside.Carry out the technology of follow-up solar cells such as positive backplate then.
With above-mentioned foundation desirable embodiment of the present invention is enlightenment, and by above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this invention technological thought.The technical scope of this invention is not limited to the content on the specification, must determine its technical scope according to the claim scope.
Claims (5)
1. method that realizes the gradual lamination passivation film in solar battery back surface, it is characterized in that: carry out deposit film on the surface backlight of silicon chip of solar cell after treatment by the chemical vapor deposition method method, the gas when beginning to deposit is SiH
4And N
2The mist of O adds NH gradually in deposition process
3, make the component of film become silicon nitride to skin again to the nitrogen oxide that skin becomes silicon by the silicon dioxide of silicon chip surface.
2. the method for the gradual lamination passivation film in realization solar battery back according to claim 1 surface is characterized in that: described chemical vapor deposition method method is to deposit at the silicon chip shady face under temperature is 200 °~400 ° condition.
3. the method for the gradual lamination passivation film in realization solar battery back according to claim 1 surface, it is characterized in that: described silicon chip is P type or n type single crystal silicon, the resistivity of silicon chip is 0.2 Ω cm~10 Ω cm.
4. according to the method for the gradual lamination passivation film of claim 1 or 3 described realization solar battery back surfaces, it is characterized in that: the gas when described chemical vapor deposition method method begins is SiH
4And N
2The gas that O advanced to mix in 1: 10 in proportion~1: 1 adds NH gradually in the technology
3In the gas that mixes.
5. the method for the gradual lamination passivation film in realization solar battery back according to claim 1 surface, it is characterized in that: the thickness of described film is between 50nm~300nm.
Priority Applications (2)
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---|---|---|---|
CN 201010152173 CN101964378A (en) | 2010-04-20 | 2010-04-20 | Method for realizing graded laminated passivation film on back surface of solar cell |
PCT/CN2010/078484 WO2011131000A1 (en) | 2010-04-20 | 2010-11-06 | Method for achieving graded lamination passivation thin film on backplane of solar battery |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010152173 CN101964378A (en) | 2010-04-20 | 2010-04-20 | Method for realizing graded laminated passivation film on back surface of solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101964378A true CN101964378A (en) | 2011-02-02 |
Family
ID=43517191
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CN 201010152173 Pending CN101964378A (en) | 2010-04-20 | 2010-04-20 | Method for realizing graded laminated passivation film on back surface of solar cell |
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WO (1) | WO2011131000A1 (en) |
Cited By (9)
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CN102339871A (en) * | 2011-07-30 | 2012-02-01 | 常州天合光能有限公司 | Positive dielectric film of sandwich structure suitable for RIE (reactive ion etching) texture and manufacturing method thereof |
CN103311372A (en) * | 2013-06-18 | 2013-09-18 | 常州时创能源科技有限公司 | Crystalline silicon oxidation treatment apparatus for passivation of solar cells |
CN105047544A (en) * | 2015-07-10 | 2015-11-11 | 苏州工业园区纳米产业技术研究院有限公司 | Preparation method of low-stress variation PECVD silicon dioxide film |
CN106169510A (en) * | 2016-09-29 | 2016-11-30 | 无锡尚德太阳能电力有限公司 | Solar battery back passivation film structure and preparation method |
CN111509081A (en) * | 2020-03-20 | 2020-08-07 | 中国科学院宁波材料技术与工程研究所 | Preparation method of ultrathin oxygen-containing nitrogen-silicon film and application of ultrathin oxygen-containing nitrogen-silicon film in passivation of contact battery |
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US10991838B1 (en) | 2020-05-29 | 2021-04-27 | Jinko Green Energy (Shanghai) Management Co., LTD | Photovoltaic module, solar cell, and manufacturing method therefor |
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Application publication date: 20110202 |