CN110444633A - A kind of preparation method of monocrystalline PERC solar cell - Google Patents
A kind of preparation method of monocrystalline PERC solar cell Download PDFInfo
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- CN110444633A CN110444633A CN201910706665.7A CN201910706665A CN110444633A CN 110444633 A CN110444633 A CN 110444633A CN 201910706665 A CN201910706665 A CN 201910706665A CN 110444633 A CN110444633 A CN 110444633A
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- solar cell
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- perc solar
- alkali
- monocrystalline perc
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 16
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 16
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 239000003513 alkali Substances 0.000 claims abstract description 23
- 238000005498 polishing Methods 0.000 claims abstract description 16
- 210000002268 wool Anatomy 0.000 claims abstract description 16
- 235000008216 herbs Nutrition 0.000 claims abstract description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 13
- 238000002161 passivation Methods 0.000 claims abstract description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 239000011574 phosphorus Substances 0.000 claims abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 6
- 238000007650 screen-printing Methods 0.000 claims abstract description 5
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000002351 wastewater Substances 0.000 claims description 7
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- 239000005416 organic matter Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000005554 pickling Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 11
- 239000000243 solution Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 239000002253 acid Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to crystal silicon solar energy battery technology of preparing more particularly to a kind of preparation methods of monocrystalline PERC solar cell.It is the following steps are included: S1, alkali polishing；S2, cleaning；S3, deposition backside passivation film；S4, deposition back side silicon nitride；S5, alkali making herbs into wool；S6, phosphorus diffusion；S7, phosphorosilicate glass is removed；S8, deposition front side silicon nitride film；S9, back side fluting；S10, the positive back pastes of silk-screen printing；S11, sintering.Cost is relatively low in this way, effect is preferable and more environmentally friendly.
Description
Technical field
The present invention relates to crystal silicon solar energy battery technology of preparing more particularly to a kind of preparations of monocrystalline PERC solar cell
Method.
Background technique
Localized contact back passivation (PERC:Passivated Emitter and Rear Cell) solar battery is mainly former
Reason is to be covered at the back side of silicon wafer with passivating film (aluminium oxide or silicon oxynitride), to play passivated surface, improves long-wave response
Effect, to promote the transfer efficiency of battery.Passivating film is very thin, it is desirable that silicon chip surface is smooth as far as possible, so production passivating film
It needs to be processed by shot blasting silicon chip back side before, simultaneously because passivating film is non-conductive, also need in manufacturing process with laser pair
Passivating film differential trench open, in order to which aluminum metal is contacted with silicon wafer back surface, collected current.In addition aluminium paste is in high-temperature sintering process
In, the passivation of passivating film can be destroyed, therefore usually to cover silicon nitride film again on passivating film, played a protective role.
The preparation of existing monocrystalline PERC solar cell includes the following steps: Wafer Cleaning, alkali making herbs into wool, phosphorus diffusion, dephosphorization
Silica glass, the polishing of back side acid, deposition backside passivation film, deposition back side silicon nitride, deposition front side silicon nitride film, backside laser are opened
Slot, the positive back pastes of silk-screen printing, sintering.But there are the following problems:
The two-sided participation reaction of silicon wafer wool making, is two-sided making herbs into wool.It needs to remove the flannelette at the back side below while to be polished, increased
The loss of silicon, while two-sided making herbs into wool also results in the waste of solution.
Sour polishing effect is bad, and back side flatness is inadequate, influences the passivation effect of passivating film, reduces battery efficiency.
Acid polishing uses a large amount of nitric acid and hydrofluoric acid, generates a large amount of sour gas and high content acid wastewater, needs spy
Different processing, cost for wastewater treatment is high, and environmental protection pressure is big.
Summary of the invention
The technical problems to be solved by the present invention are: a kind of preparation method of monocrystalline PERC solar cell is provided, using this
Cost is relatively low, effect is preferable and more environmentally friendly for kind method.
The technical scheme adopted by the invention is that: a kind of preparation method of monocrystalline PERC solar cell, it includes following step
It is rapid:
S1, alkali polishing；
S2, cleaning；
S3, deposition backside passivation film；
S4, deposition back side silicon nitride；
S5, alkali making herbs into wool；
S6, phosphorus diffusion；
S7, phosphorosilicate glass is removed；
S8, deposition front side silicon nitride film；
S9, back side fluting；
S10, the positive back pastes of silk-screen printing；
S11, sintering.
Preferably, step S2 cleaning specifically includes the following steps:
S21, alkali cleaning: using KOH and hydrogen peroxide, removes the organic matter on silicon wafer, and the time is 2-3 minutes；
S22, pickling: using remaining metal ion on hydrochloric acid and hydrofluoric acid mixed solution removal silicon wafer, the time is 2-3 minutes；
S23, washing, drying.
Preferably, KOH concentration is 0.4%-0.8%, hydrogen peroxide concentration 2%-3% in step S21；Hydrochloric acid in step S22
Concentration is 4%-7%, hydrofluoric acid concentration 6%-10%
Preferably, alkali polishing uses sodium hydroxide or potassium hydroxide solution, concentration 15%-25%, temperature in the step S1
It is 70-75 DEG C, the time is 4-6 minutes.
Preferably, backside passivation film is aluminum oxide film or aluminium oxide and silicon oxynitride two-layer compound in the step S3
Film.
Preferably, step S3 and step S4 is deposited inside same equipment.
It is handled together preferably, the alkali waste water generated in step S1 is pooled in the alkali waste water of step S5 generation.
Using above method compared with prior art, the invention has the following advantages that alkali polishing step of the invention is placed on
Cleaning silicon chip is played the role of in front first, is conducive to subsequent positive making herbs into wool；Secondly alkali polishing meets backside passivation film to back
The requirement of surface evenness, effect promote battery efficiency significantly better than acid polishing；Then it is directly carried out at back side coating film after alkali polishing
Reason, and back side film is fine and close, can be very good that the back side is protected not influenced by Woolen-making liquid, the so actually single side in making herbs into wool
Making herbs into wool reduces silicon wafer loss, saves making herbs into wool solution；Alkali making herbs into wool step finally can be imported by the alkaline waste water that alkali polishing generates
In the waste water of generation, unified neutralisation treatment, processing mode is simple, and cost is also low.
Alkali polishing and cleaning are carried out using this Parameter Conditions, effect is preferable, ensure that silicon wafer before depositing passivating film
Cleanliness enhances passivating film to the passivation effect of cell backside, improves battery efficiency.
The step of depositing backside passivation film and silicon nitride film in same equipment cavity, eliminating silicon wafer disengaging deposit cavity,
Silicon wafer and extraneous contact are avoided, it is possible to prevente effectively from silicon wafer is contaminated.
Specific embodiment
The present invention is described further below by way of specific embodiment, but the present invention is not limited only in detail below in fact
Apply mode.
A kind of preparation method of monocrystalline PERC solar cell, it the following steps are included:
Alkali polishing: configuration sodium hydroxide or potassium hydroxide solution, concentration 15%-25%, temperature is 70-75 DEG C, by monocrystalline silicon piece
The gaily decorated basket is put into, submergence is polished for 4-6 minutes in the solution；
Cleaning: the silicon wafer after polishing is cleaned using following steps.KOH and hydrogen peroxide are used first, remove the organic matter on silicon wafer,
Time is 2-3 minutes, and wherein KOH concentration is 0.4%-0.8%, hydrogen peroxide concentration 2%-3%；Then mixed using hydrochloric acid and hydrofluoric acid
Remaining metal ion on solution removal silicon wafer is closed, the time is 2-3 minutes, and wherein concentration of hydrochloric acid is 4%-7%, and hydrofluoric acid concentration is
6%-10%；Last silicon wafer needs to clean up and dry into deionized water excessively；
Backside deposition passivating film and silicon nitride film: silicon wafer is put into graphite boat and is put into back passivation depositing device cavity, is joined
Number setting, is sequentially depositing pellumina, silicon oxynitride film, silicon nitride film in silicon chip back side；
Alkali making herbs into wool: being put into making herbs into wool in aqueous slkali for the silicon wafer of back side coating film, and since the back side is not reacted with Woolen-making liquid, this making herbs into wool is single
Wheat flour suede；
Phosphorus diffusion: being spread using tubular type, and by the silicon wafer after making herbs into wool, every two panels is folded to be inserted in quartz boat card slot back-to-back together, into
Row phosphorus diffusion.
Remove phosphorosilicate glass；
Positive silicon nitride film；
The back side carries out laser slotting；
Silk-screen printing upper/lower electrode；
Cofiring forms metal contact.
In addition to above-mentioned the step of being discussed in detail, the technique of remaining step is same as the prior art, so in this application
It is not developed in details.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, it will be understood by those of skill in the art that it still can be right
Technical solution documented by previous embodiment is modified, or is replaced on an equal basis to part of technical characteristic；And these
It modifies or replaces, the essence of corresponding technical solution is not made to be detached from the spirit and model of technical solution of various embodiments of the present invention
It encloses.
Claims (7)
1. a kind of preparation method of monocrystalline PERC solar cell, which is characterized in that it the following steps are included:
S1, alkali polishing；
S2, cleaning；
S3, deposition backside passivation film；
S4, deposition back side silicon nitride；
S5, alkali making herbs into wool；
S6, phosphorus diffusion；
S7, phosphorosilicate glass is removed；
S8, deposition front side silicon nitride film；
S9, back side fluting；
S10, the positive back pastes of silk-screen printing；
S11, sintering.
2. a kind of preparation method of monocrystalline PERC solar cell according to claim 1, it is characterised in that: the step S2
Cleaning specifically includes the following steps:
S21, alkali cleaning: using KOH and hydrogen peroxide, removes the organic matter on silicon wafer, and the time is 2-3 minutes；
S22, pickling: using remaining metal ion on hydrochloric acid and hydrofluoric acid mixed solution removal silicon wafer, the time is 2-3 minutes；
S23, washing, drying.
3. a kind of preparation method of monocrystalline PERC solar cell according to claim 2, it is characterised in that: in step S21
KOH concentration is 0.4%-0.8%, hydrogen peroxide concentration 2%-3%；Concentration of hydrochloric acid is 4%-7%, hydrofluoric acid concentration 6%- in step S22
10%。
4. a kind of preparation method of monocrystalline PERC solar cell according to claim 1, it is characterised in that: the step S1
Middle alkali polishing uses sodium hydroxide or potassium hydroxide solution, concentration 15%-25%, and temperature is 70-75 DEG C, and the time is 4-6 minutes.
5. a kind of preparation method of monocrystalline PERC solar cell according to claim 1, it is characterised in that: the step S3
Middle backside passivation film is aluminum oxide film or aluminium oxide and silicon oxynitride double-layered compound film.
6. a kind of preparation method of monocrystalline PERC solar cell according to claim 1, it is characterised in that: step S3 and step
Rapid S4 is deposited inside same equipment.
7. a kind of preparation method of monocrystalline PERC solar cell according to claim 1, it is characterised in that: produced in step S1
Raw alkali waste water is pooled in the alkali waste water of step S5 generation and handles together.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910706665.7A CN110444633A (en) | 2019-08-01 | 2019-08-01 | A kind of preparation method of monocrystalline PERC solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910706665.7A CN110444633A (en) | 2019-08-01 | 2019-08-01 | A kind of preparation method of monocrystalline PERC solar cell |
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| CN110444633A true CN110444633A (en) | 2019-11-12 |
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| CN201910706665.7A Pending CN110444633A (en) | 2019-08-01 | 2019-08-01 | A kind of preparation method of monocrystalline PERC solar cell |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129221A (en) * | 2019-12-24 | 2020-05-08 | 浙江爱旭太阳能科技有限公司 | Alkaline polishing preparation method of PERC solar cell |
| CN111564531A (en) * | 2020-06-09 | 2020-08-21 | 山西潞安太阳能科技有限责任公司 | Novel preparation process for realizing LDSE (laser direct ion exchanger) by alkali throwing |
| CN113659040A (en) * | 2021-09-08 | 2021-11-16 | 苏州潞能能源科技有限公司 | Process for treating alkali polishing defective piece of PERC solar cell |
| CN116013802A (en) * | 2023-03-24 | 2023-04-25 | 英利能源发展(保定)有限公司 | Method for determining passivation performance of battery alumina, electronic equipment and storage medium |
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| CN105428450A (en) * | 2015-12-16 | 2016-03-23 | 晋能清洁能源科技有限公司 | Alkaline polishing method during production of passivated emitter rear contact (PERC) crystalline silicon solar cell |
| CN105590993A (en) * | 2016-02-29 | 2016-05-18 | 中利腾晖光伏科技有限公司 | Production method of rear surface passivation solar cell |
| CN105845778A (en) * | 2016-05-19 | 2016-08-10 | 晋能清洁能源科技有限公司 | Crystalline silicon PERC cell alkali polishing method not influencing front surface |
| CN108649098A (en) * | 2018-04-19 | 2018-10-12 | 常州捷佳创精密机械有限公司 | A kind of method of silicon chip single side etching polishing |
| CN109461777A (en) * | 2018-10-24 | 2019-03-12 | 苏州腾晖光伏技术有限公司 | A kind of PERC cell backside passivating structure and preparation method thereof |
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2019
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| CN105590993A (en) * | 2016-02-29 | 2016-05-18 | 中利腾晖光伏科技有限公司 | Production method of rear surface passivation solar cell |
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| CN109461777A (en) * | 2018-10-24 | 2019-03-12 | 苏州腾晖光伏技术有限公司 | A kind of PERC cell backside passivating structure and preparation method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129221A (en) * | 2019-12-24 | 2020-05-08 | 浙江爱旭太阳能科技有限公司 | Alkaline polishing preparation method of PERC solar cell |
| CN111564531A (en) * | 2020-06-09 | 2020-08-21 | 山西潞安太阳能科技有限责任公司 | Novel preparation process for realizing LDSE (laser direct ion exchanger) by alkali throwing |
| CN113659040A (en) * | 2021-09-08 | 2021-11-16 | 苏州潞能能源科技有限公司 | Process for treating alkali polishing defective piece of PERC solar cell |
| CN113659040B (en) * | 2021-09-08 | 2023-12-12 | 苏州潞能能源科技有限公司 | PERC solar cell alkaline polishing bad piece treatment process |
| CN116013802A (en) * | 2023-03-24 | 2023-04-25 | 英利能源发展(保定)有限公司 | Method for determining passivation performance of battery alumina, electronic equipment and storage medium |
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