CN105428450A - Alkaline polishing method during production of passivated emitter rear contact (PERC) crystalline silicon solar cell - Google Patents
Alkaline polishing method during production of passivated emitter rear contact (PERC) crystalline silicon solar cell Download PDFInfo
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- CN105428450A CN105428450A CN201510945459.3A CN201510945459A CN105428450A CN 105428450 A CN105428450 A CN 105428450A CN 201510945459 A CN201510945459 A CN 201510945459A CN 105428450 A CN105428450 A CN 105428450A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000005498 polishing Methods 0.000 title claims abstract description 20
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 22
- 238000007747 plating Methods 0.000 claims abstract description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 15
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000007650 screen-printing Methods 0.000 claims abstract description 8
- 238000005245 sintering Methods 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 28
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 28
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 28
- 239000003513 alkali Substances 0.000 claims description 25
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 235000008216 herbs Nutrition 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 210000002268 wool Anatomy 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 5
- 238000002161 passivation Methods 0.000 abstract description 4
- 238000007517 polishing process Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 2
- 238000005096 rolling process Methods 0.000 abstract 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 24
- 238000005516 engineering process Methods 0.000 description 11
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 229910019213 POCl3 Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention belongs to a manufacturing technique of a solar cell, and relates to an alkaline polishing method during production of a passivated emitter rear contact (PERC) crystalline silicon solar cell. The method comprises the following steps of carrying out conventional processes of etching, diffusion and groove etching on a single-silicon wafer to remove positive-negative (PN) junctions at an edge and a back surface and plating of a silicon nitride film on a front surface by plasma enhanced chemical vapor deposition (PECVD), etching to remove silicon nitride plated on the back surface and at the edge in a rolling way by a belt driving way, and then carrying out polishing processing on the back surface through an alkaline groove; and depositing an aluminum oxide plated thin film on the back surface by an atomic layer, and carrying out conventional processes of laser grooving, metal paste silk-screen printing on the front surface and the back surface and sintering to prepare a PERC battery piece. The alkaline polishing process is integrated into the traditional PERC battery production process, the problems of complicated production process during the current introduction process of alkaline polishing, poor controllability, poor back surface passivation effect caused by plating a film layer on the front surface in a rolling way and the like are solved, so that the production the PERC battery based on alkaline polishing can meet the requirement of yield better.
Description
Technical field
The invention belongs to the manufacturing technology of solar cell, relate to the alkali finishing method in the production of a kind of PERC crystal silicon solar energy battery.
Background technology
Along with improving constantly of crystal-silicon solar cell technology, the volume production conversion efficiency of the single crystal silicon solar cell of traditional structure reaches 19.2%, and polycrystalline silicon solar cell volume production conversion efficiency reaches 17.8%.Traditional structure battery efficiency has not had too large room for promotion, and the lifting of battery efficiency must rely on the crystal-silicon solar cell of new structure to develop.In current existing silicon substrate high-efficiency battery technology, because the technique promoting battery efficiency is moved to cell backside by passivation emitter and back surface battery (PERC battery), therefore the manufacturing process of itself and other high-efficiency battery technology and new raising battery efficiency has extraordinary compatibility.PERC battery can be incorporated in the manufacturing of silicon solar cell with other high efficiency technicals simultaneously.So PERC battery be in current high-efficiency battery most possibly by the technology of commercial introduction, study the large-scale production of its batch production technique to PERC battery have extraordinary directiveness effect.
The production technology of conventional Al2O3PERC battery is making herbs into wool → diffusion → etching → plating Al2O3 → plating back side SiNx → plating front SiNx → lbg or perforate → silk screen printing → sintering → test.PERC battery mainly adopts the ALD method back side to prepare the mode of alundum (Al2O3) film, this just requires that back surface has good planarization, current research mainly concentrates on carries out polishing to the back side, so not only solve the planarization problem of back side coating film, and back side n type diffused layer can be removed, promote the formation of P+ layer, improve minority carrier life time, increase back surface reflectivity.Therefore introduction glossing is incorporated in the existing production technology of PERC battery is a kind of effective means improving PERC battery efficiency further.
Current glossing mainly comprises sour polishing and alkali glossing two kinds, compared to sour polishing, there is higher battery conversion efficiency according to correlative study display alkali glossing, but because alkali polishing preparation section is complicated, poor controllability, adopt sour polishing so now main in the production of existing PERC battery, how realizing simplifying in alkali glossing to existing PERC battery production technology process is the difficult problem faced at present.
Summary of the invention
Technical problem to be solved by this invention is, alkali finishing method in providing a kind of PERC crystal silicon solar energy battery that alkali glossing can be used for existing PERC battery production technology to produce, it can be improved, and production process in current alkali polishing process is complicated, the defect of poor controllability, solves front rete and causes the problems such as back surface passivation poor effect around plating.
PERC crystal silicon solar energy battery of the present invention produce in alkali finishing method step as follows: after silicon nitride film operation is plated to the PN junction that monocrystalline silicon piece carries out conventional making herbs into wool, diffusion, etching groove remove edge and the back side, front PECVD, utilize belt drive mode to etch and remove back surface and edge around plating silicon nitride, then carry out back surface polishing through alkali groove; Again by after the alumina-plated film of the ald back side, carry out conventional lbg, the positive back metal slurry of silk screen printing, sintering circuit, obtained PERC cell piece.
Etch utilizing belt drive mode and remove back surface and edge in the process of plating silicon nitride, belt speed is 1.8-2.3m/min, and dosing volume ratio is HNO3:HF=10:1-4:1, and etching removes back surface and edge around plating silicon nitride.
Alkali glossing is incorporated in existing PERC battery production technology by the present invention, solve production process in current alkali polishing introducing process complicated, poor controllability and front rete cause the problems such as back surface passivation poor effect around plating, make the PERC battery production based on alkali polishing can adapt to the requirement of volume production preferably.
Embodiment
Below in conjunction with comparative example and embodiment, technical scheme of the present invention and effect are described further.
Comparative example:
Getting 800pcs monocrystalline silicon piece, is the alkali groove of NaOH:Addition=4:1 by dosing volume ratio, making herbs into wool time 1100s, temperature 80 DEG C, and preparation duplicate removal is the matte of 0.4-0.8g; Take POCl3 as phosphorus source, deposition and propelling time are respectively 15min and 13min, and temperature is about 830 DEG C and spreads; The PN junction at edge and the back side is removed through the dosing volume ratio etching groove that is HNO3:HF=10:1; Front PECVD plates silicon nitride film, deposit thickness 70-90nm, and coating temperature is about 450 DEG C; The NaOH alkali groove being 17.6% through volume fraction carries out back surface polishing; By ald (ALD) back side alumina-plated film, deposit thickness is about 10nm; Then PECVD back side plating silicon nitride, deposit thickness 90-110nm; Then through lbg, groove depth is about 100nm; Adopt the positive back metal slurry of four main grid silk screen printings, at sintering peak temperature 780 DEG C, make PERC cell piece; The maximum conversion efficiency of obtained monocrystalline PERC cell piece is 19.7%.
Embodiment one:
Getting 800pcs monocrystalline silicon piece, is the alkali groove of NaOH:Addition=4:1 by dosing volume ratio, making herbs into wool time 1100s, temperature 80 DEG C, and preparation duplicate removal is the matte of 0.4-0.8g; Take POCl3 as phosphorus source, deposition and propelling time are respectively 15min and 13min, and temperature is about 830 DEG C and spreads; The PN junction at edge and the back side is removed through the dosing volume ratio etching groove that is HNO3:HF=10:1; Front PECVD plates silicon nitride film, deposit thickness 70-90nm, and coating temperature is about 450 DEG C; Belt speed is 2.3m/min, and dosing volume ratio is that the NaOH alkali groove that HNO3:HF=10:1 etching removal back surface and edge are 17.6% through volume fraction after plating silicon nitride carries out back surface polishing; By ald (ALD) back side alumina-plated film, deposit thickness is about 10nm; Then PECVD back side plating silicon nitride, deposit thickness 90-110nm; Then through lbg, groove depth is about 100nm; Adopt the positive back metal slurry of four main grid silk screen printings, at sintering peak temperature 780 DEG C, make PERC cell piece; The maximum conversion efficiency of obtained monocrystalline PERC cell piece can reach 20.2%.
Embodiment two:
Getting 800pcs monocrystalline silicon piece, is the alkali groove of NaOH:Addition=4:1 by dosing volume ratio, making herbs into wool time 1100s, temperature 80 DEG C, and preparation duplicate removal is the matte of 0.4-0.8g; Take POCl3 as phosphorus source, deposition and propelling time are respectively 15min and 13min, and temperature is about 830 DEG C and spreads; The PN junction at edge and the back side is removed through the dosing volume ratio etching groove that is HNO3:HF=10:1; Front PECVD plates silicon nitride film, deposit thickness 70-90nm, and coating temperature is about 450 DEG C; Belt speed is 1.8m/min dosing volume ratio is that the NaOH alkali groove that HNO3:HF=10:1 etching removal back surface and edge are 17.6% through volume fraction after plating silicon nitride carries out back surface polishing; By ald (ALD) back side alumina-plated film, deposit thickness is about 10nm; Then PECVD back side plating silicon nitride, deposit thickness 90-110nm; Then through lbg, groove depth is about 100nm; Adopt the positive back metal slurry of four main grid silk screen printings, at sintering peak temperature 780 DEG C, make PERC cell piece; The maximum conversion efficiency of obtained monocrystalline PERC cell piece can reach 20.4%.
Embodiment three:
Getting 800pcs monocrystalline silicon piece, is the alkali groove of NaOH:Addition=4:1 by dosing volume ratio, making herbs into wool time 1100s, temperature 80 DEG C, and preparation duplicate removal is the matte of 0.4-0.8g; Take POCl3 as phosphorus source, deposition and propelling time are respectively 15min and 13min, and temperature is about 830 DEG C and spreads; The PN junction at edge and the back side is removed through the dosing volume ratio etching groove that is HNO3:HF=10:1; Front PECVD plates silicon nitride film, deposit thickness 70-90nm, and coating temperature is about 450 DEG C; Belt speed is 1.8m/min dosing volume ratio is that the NaOH alkali groove that HNO3:HF=4:1 etching removal back surface and edge are 17.6% through volume fraction after plating silicon nitride carries out back surface polishing; By ald (ALD) back side alumina-plated film, deposit thickness is about 10nm; Then PECVD back side plating silicon nitride, deposit thickness 90-110nm; Then through lbg, groove depth is about 100nm; Adopt the positive back metal slurry of four main grid silk screen printings, at sintering peak temperature 780 DEG C, make PERC cell piece; The maximum conversion efficiency of obtained monocrystalline PERC cell piece can reach 20.5%.
Can be found out by the test result of above comparative example and embodiment: the transformation efficiency of the cell piece adopting the inventive method to obtain can reach the requirement of volume production, transformation efficiency the best that embodiment three shows can reach 20.5%, 0.8% is improve, this is because can have a great impact the polishing effect of back surface around plating compared to the comparative example do not removed around plating silicon nitride; Embodiment one, two also has corresponding raising compared with comparative example, by analysis this with around plate partly remove completeness, polishing uniformity have direct relation, lower belt speed, to improve HF proportion be the effective way addressed this problem, but also need to consider and balance between output.
Claims (2)
1. the alkali finishing method in a PERC crystal silicon solar energy battery production, it is characterized in that: after silicon nitride film operation is plated to the PN junction that monocrystalline silicon piece carries out conventional making herbs into wool, diffusion, etching groove remove edge and the back side, front PECVD, utilize belt drive mode to etch and remove back surface and edge around plating silicon nitride, then carry out back surface polishing through alkali groove; Again by after the alumina-plated film of the ald back side, carry out conventional lbg, the positive back metal slurry of silk screen printing, sintering circuit, obtained PERC cell piece.
2. the alkali finishing method in PERC crystal silicon solar energy battery production according to claim 1, it is characterized in that: etch utilizing belt drive mode and remove back surface and edge in the process of plating silicon nitride, belt speed is 1.8-2.3m/min, dosing volume ratio is HNO3:HF=10:1-4:1, and etching removal back surface and edge are around plating silicon nitride.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106328765A (en) * | 2016-08-31 | 2017-01-11 | 晋能清洁能源科技有限公司 | Preparation method and preparation technology of efficient PERC crystalline silicon solar cell |
| CN107910398A (en) * | 2017-10-12 | 2018-04-13 | 东方环晟光伏（江苏）有限公司 | The production method of p-type PERC double-side solar cells |
| CN109887841A (en) * | 2019-01-21 | 2019-06-14 | 苏州爱康光电科技有限公司 | A kind of PERC cell backside polishing process |
| CN110444633A (en) * | 2019-08-01 | 2019-11-12 | 宁波尤利卡太阳能科技发展有限公司 | A kind of preparation method of monocrystalline PERC solar cell |
| CN111129217A (en) * | 2019-12-20 | 2020-05-08 | 浙江爱旭太阳能科技有限公司 | Method for producing a solar cell and solar cell |
| CN115132876A (en) * | 2021-03-22 | 2022-09-30 | 黄河水电西宁太阳能电力有限公司 | Efficient PERC battery preparation process based on SE back alkali polishing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106328765A (en) * | 2016-08-31 | 2017-01-11 | 晋能清洁能源科技有限公司 | Preparation method and preparation technology of efficient PERC crystalline silicon solar cell |
| CN107910398A (en) * | 2017-10-12 | 2018-04-13 | 东方环晟光伏（江苏）有限公司 | The production method of p-type PERC double-side solar cells |
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| CN110444633A (en) * | 2019-08-01 | 2019-11-12 | 宁波尤利卡太阳能科技发展有限公司 | A kind of preparation method of monocrystalline PERC solar cell |
| CN111129217A (en) * | 2019-12-20 | 2020-05-08 | 浙江爱旭太阳能科技有限公司 | Method for producing a solar cell and solar cell |
| CN111129217B (en) * | 2019-12-20 | 2021-05-18 | 浙江爱旭太阳能科技有限公司 | Method for producing a solar cell and solar cell |
| CN115132876A (en) * | 2021-03-22 | 2022-09-30 | 黄河水电西宁太阳能电力有限公司 | Efficient PERC battery preparation process based on SE back alkali polishing |
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