CN111129217A - Method for producing a solar cell and solar cell - Google Patents

Method for producing a solar cell and solar cell Download PDF

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CN111129217A
CN111129217A CN201911324546.1A CN201911324546A CN111129217A CN 111129217 A CN111129217 A CN 111129217A CN 201911324546 A CN201911324546 A CN 201911324546A CN 111129217 A CN111129217 A CN 111129217A
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silicon substrate
silicon
oxide layer
porous
solar cell
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CN111129217B (en
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孙越
林纲正
陈刚
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Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
Tianjin Aiko Solar Energy Technology Co Ltd
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Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
Tianjin Aiko Solar Energy Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Methods for fabricating solar cells and solar cells are described herein. The method for manufacturing a solar cell described herein includes: forming a porous silicon oxide layer on a first surface of the doped silicon substrate; forming a first silicon nitride layer on a second surface of the silicon substrate opposite to the first surface; and forming a second silicon nitride layer on the porous silicon oxide layer. Solar cells fabricated using the method are also described. According to the embodiment of the disclosure, the film uniformity of the solar cell can be improved.

Description

Method for producing a solar cell and solar cell
Technical Field
Embodiments of the present disclosure relate generally to the field of solar cell technology, and more particularly, to a solar cell and a method for manufacturing the same capable of improving film layer uniformity.
Background
Crystalline silicon (Si) cells are leading products of solar cells, production costs thereof are increasingly reduced, and production processes thereof are becoming sophisticated. However, as efficiency is about to reach the efficiency bottleneck, it is also one of the potential needs to improve the efficiency of the solar cell and ensure the aesthetic property.
The tubular PECVD (plasma enhanced chemical vapor deposition) process has the defect of film winding and plating, wherein the film winding is deposited at the edge of the front surface when the film is deposited at the back surface. After depositing a silicon nitride film layer on the back surface of a silicon substrate of a solar cell, when depositing a silicon nitride film layer on the front surface of the silicon substrate, the wraparound plating phenomenon may increase the thickness of the silicon nitride film layer deposited on the front surface edge of the silicon substrate, and a whitening phenomenon may occur on the front surface edge of the silicon substrate. When a tubular PECVD process is used to deposit a silicon nitride anti-reflective film on the front surface of a silicon substrate, a small amount of silicon nitride may adhere to the surface of the silicon oxide passivation layer at the edges of the front surface of the silicon substrate and become nucleation centers due to the phenomenon of wrap-around plating. The nucleation center facilitates rapid growth of crystals when the silicon nitride film layer is deposited on the front surface, thereby increasing the thickness of the silicon nitride film layer at the edge of the silicon substrate, and the front surface of the solar cell visually appears in a lighter color. The non-uniform thickness of the silicon nitride anti-reflective film affects the performance of the solar cell, and there is a general demand for a solar cell having uniform color and deep film color at present.
Therefore, it is desired to develop a scheme for improving the uniformity of a film layer of a crystalline silicon solar cell, improving the edge whitening phenomenon of the solar cell and improving the film color uniformity of the solar cell while ensuring the efficiency of the solar cell.
Disclosure of Invention
Generally, embodiments of the present disclosure provide methods for fabricating solar cells and solar cells fabricated thereby.
In a first aspect, a method for manufacturing a solar cell is provided. The method comprises the following steps: forming a porous silicon oxide layer on a first surface of the doped silicon substrate; forming a first silicon nitride layer on a second surface of the silicon substrate opposite to the first surface; and forming a second silicon nitride layer on the porous silicon oxide layer.
In some embodiments, forming the porous silicon oxide layer comprises: forming a porous silica layer having a pore size of between 10nm and 20 nm.
In some embodiments, forming the porous silicon oxide layer comprises: spraying a porous silica slurry on the first surface of the silicon substrate; and annealing the silicon substrate sprayed with the porous silicon oxide slurry to form the porous silicon oxide layer.
In some embodiments, annealing the silicon substrate comprises: placing the silicon substrate in an annealing chamber; raising the temperature of the annealing chamber to a predetermined temperature in an atmosphere of nitrogen gas; and thermally oxidizing the silicon substrate in an atmosphere of nitrogen and oxygen.
In some embodiments, a silicon oxide layer is formed between the first surface of the silicon substrate and the porous silicon oxide layer by thermally oxidizing the silicon substrate.
In some embodiments, the method further comprises: forming an aluminum oxide layer on the second surface of the silicon substrate after forming the porous silicon oxide layer and before forming the first silicon nitride layer.
In a second aspect, a solar cell is provided. The solar cell includes: a silicon substrate including a PN junction and having a first surface and a second surface opposite to the first surface; a first silicon nitride layer on the second surface of the silicon substrate; a second silicon nitride layer on the first surface of the silicon substrate; and a porous silicon oxide layer between the first surface of the silicon substrate and the second silicon nitride layer.
In some embodiments, the pore size of the porous silica layer is between 10nm and 20 nm.
In some embodiments, the solar cell further comprises: a silicon oxide layer between the first surface of the silicon substrate and the porous silicon oxide layer.
In some embodiments, the solar cell further comprises: an aluminum oxide layer between the second surface of the silicon substrate and the first silicon nitride layer.
According to the embodiment of the disclosure, by depositing the porous silicon oxide layer on the front surface of the silicon substrate, the adverse effect of the silicon nitride film layer coated around the front surface on the thickness and the color of the front surface film layer of the solar cell is effectively improved, so that the edge whitening phenomenon of the solar cell is improved and the film color uniformity of the solar cell is improved while the efficiency of the solar cell is ensured.
This summary is provided to introduce a selection of concepts of the disclosure in a simplified form that are further described below in the detailed description. This summary is not intended to identify key features or essential features of the disclosure, nor is it intended to be used to limit the scope of the disclosure.
Drawings
The above and other objects, features and advantages of the present disclosure will become more apparent by describing in more detail embodiments of the present disclosure with reference to the attached drawings in which:
fig. 1 is a schematic cross-sectional view illustrating a solar cell according to an embodiment of the present disclosure;
fig. 2 is a flow chart illustrating a method for fabricating a solar cell according to an embodiment of the present disclosure;
fig. 3 is a schematic cross-sectional view illustrating a structure obtained in a method for manufacturing a solar cell according to an embodiment of the present disclosure; and
fig. 4 is a flowchart illustrating a method for manufacturing a solar cell according to another embodiment of the present disclosure.
Detailed Description
The principles of the present disclosure will be described below with reference to a number of example embodiments shown in the drawings. While the preferred embodiments of the present disclosure have been illustrated in the accompanying drawings, it is to be understood that these embodiments are described merely for the purpose of enabling those skilled in the art to better understand and to practice the present disclosure, and are not intended to limit the scope of the present disclosure in any way. In addition, the numerical values described in the example embodiments are merely exemplary, and aspects of the embodiments of the present disclosure are not limited to these numerical values and may have other numerical ranges.
Embodiments of the present disclosure provide solutions that can improve film layer uniformity. According to an embodiment of the present disclosure, a porous silicon oxide layer is disposed on a first surface of a silicon substrate. When the silicon nitride layer is deposited on the second surface of the silicon substrate by the PECVD process, even if the wraparound plating of the silicon nitride layer occurs, the plasma wrapped around to the first surface of the silicon substrate diffuses toward a region of lower concentration, i.e., is preferentially deposited in the voids of the porous silicon oxide layer. Therefore, the silicon nitride which is plated around the first surface of the silicon substrate does not affect the uniformity of the film thickness at the first surface. Therefore, after the silicon nitride antireflection layer is deposited on the first surface of the silicon substrate, the thickness of the silicon nitride antireflection layer is more uniform, so that the thickness of the film layer at the first surface is kept uniform. In this way, by maintaining the thickness of the silicon nitride anti-reflective layer uniform, the efficiency of the solar cell is ensured, while the phenomenon of edge whitening of the solar cell is improved and the film color uniformity of the solar cell is improved.
The present disclosure will be described in detail below with reference to various embodiments in conjunction with the accompanying drawings.
Fig. 1 is a schematic cross-sectional view illustrating a solar cell 100 according to an embodiment of the present disclosure. As shown in fig. 1, the solar cell 100 includes a silicon substrate 102, a first silicon nitride layer 106, a porous silicon oxide layer 110, and a second silicon nitride layer 112.
The silicon substrate 102 includes a PN junction, and has a first surface and a second surface opposite to the first surface. In some embodiments, the silicon substrate 102 includes a PN junction formed therein by a diffusion process. In some embodiments, the silicon substrate 102 includes a diffusion region heavily doped by a front side laser process.
In some embodiments, the first surface of the silicon substrate 102 may be a front surface and the second surface of the silicon substrate 102 may be a back surface. In other embodiments, the first surface of the silicon substrate 102 may be a back surface and the second surface of the silicon substrate 102 is a front surface. In some embodiments, the silicon substrate 102 has a textured surface at the first surface formed by a texturing process. In some embodiments, the silicon substrate 102 further has a textured surface at the second surface.
A first silicon nitride layer 106 is disposed on the second surface of the silicon substrate 102. In some embodiments, the first silicon nitride layer 106 serves as a backside passivation film for the solar cell 100.
The second silicon nitride layer 112 is disposed on the first surface of the silicon substrate 102. In some embodiments, the second silicon nitride layer 112 serves as a front side anti-reflective film of the solar cell 100. In some embodiments, the second silicon nitride layer 112 also serves as a front side passivation film for the solar cell 100.
The porous silicon oxide layer 110 is disposed between the first surface of the silicon substrate 102 and the second silicon nitride layer 112. The porous silicon oxide layer 110 has voids due to porosity. In some embodiments, porous silicon oxide layer 110 serves as a film that deposits a small amount of silicon nitride material in its voids. In some embodiments, the pore size of the porous silica layer 110 may be greater than 10 nm. In some embodiments, the pore size of the porous silica layer 110 may be between 10nm and 20 nm. Of course, other suitable values are possible as long as a small amount of silicon nitride material can be deposited in the voids thereof without affecting the thickness uniformity of the silicon nitride film layer formed thereon.
In some embodiments, when the first silicon nitride layer 106 is deposited on the second surface of the silicon substrate 102 by PECVD, even if the wraparound plating occurs, due to the presence of the porous silicon oxide layer 110 on the first surface of the silicon substrate 102, the plasma wrapped around to the first surface of the silicon substrate 102 spontaneously diffuses toward the voids of the porous silicon oxide layer 110 due to the influence of temperature, thereby preferentially depositing silicon nitride in the voids of the porous silicon oxide layer 110. Therefore, when the second silicon nitride layer 112 is deposited on the first surface of the silicon substrate 102, the thickness of the second silicon nitride layer 112 becomes more uniform. In this way, since the silicon nitride antireflection film has a uniform thickness, the performance of the solar cell can be ensured, while the film color uniformity of the solar cell is improved, and the phenomenon of edge whitening of the solar cell is improved.
In some embodiments, as shown in fig. 1, the solar cell 100 may further include a silicon oxide layer 108. A silicon oxide layer 108 is disposed between the first surface of the silicon substrate 102 and a porous silicon oxide layer 110. The silicon oxide layer 108 is a dense silicon oxide layer formed by thermal oxidation. In some embodiments, the silicon oxide layer 108 serves as a front side passivation film for the solar cell 100.
In some embodiments, the solar cell 100 may further include an aluminum oxide layer 104. The aluminum oxide layer 104 is located between the second surface of the silicon substrate 102 and the first silicon nitride layer 106. In some embodiments, the aluminum oxide layer 104 serves as a backside passivation film for the solar cell 100.
It should be understood that in some embodiments, the solar cell 100 may further include a plurality of electrode layers. The electrode layer is a well-known structure in the field of solar cells, and a detailed description thereof is omitted herein.
Fig. 2 is a flow chart illustrating a method 200 for fabricating a solar cell according to an embodiment of the present disclosure.
At block 202, a porous silicon oxide layer 110 is formed on a first surface of a doped silicon substrate 102. In some embodiments, forming the porous silicon oxide layer 110 includes spraying a porous silicon oxide paste on the first surface of the silicon substrate 102, and annealing the silicon substrate 102 sprayed with the porous silicon oxide paste to form the porous silicon oxide layer 110. In some embodiments, the pore size of the porous silica layer 110 so formed is between 10nm and 20 nm.
In some embodiments, the porous silica slurry consists essentially of porous silica and a solvent, and the pore size of the porous silica slurry is determined by the material parameters of the porous silica slurry. In some embodiments, annealing the silicon substrate 102 sprayed with the porous silicon oxide slurry includes heating the porous silicon oxide slurry to remove the solvent in the porous silicon oxide slurry, thereby forming the porous silicon oxide layer 110 including porous silicon oxide.
In some embodiments, annealing the silicon substrate 102 includes placing the silicon substrate 102 sprayed with the porous silicon oxide slurry in an annealing chamber, raising the temperature of the annealing chamber to a predetermined temperature in an atmosphere of nitrogen, and thermally oxidizing the silicon substrate in an atmosphere of nitrogen and oxygen. In some embodiments, after heating the porous silica slurry in an atmosphere of nitrogen, most of the solvent of the porous silica slurry may be removed, and a small amount of the solvent may remain. By further performing thermal oxidation, it is possible to ensure complete removal of the solvent of the porous silica slurry. In this way, the characteristics of the porous silicon oxide layer 110 can be ensured, thereby improving the reliability of the solar cell.
In some embodiments, optionally at block 204, a silicon oxide layer 108 may be formed between the first surface of the silicon substrate 102 and the porous silicon oxide layer 110.
In some embodiments, block 202 and block 204 may be merged into one block. That is, when the porous silicon oxide layer 110 is formed, the silicon oxide layer 108 is formed. In some embodiments, the silicon oxide layer 108 is formed by annealing the silicon substrate 102 sprayed with the porous silicon oxide slurry. In some embodiments, the silicon oxide layer 108 is formed in block 202 by thermally oxidizing the silicon substrate 102.
In other embodiments, block 202 and block 204 may be divided into two blocks. That is, after forming the porous silicon oxide layer 110 at block 202, the silicon oxide layer 108 is formed between the first surface of the silicon substrate 102 and the porous silicon oxide layer 110 by thermal oxidation at block 204.
In some embodiments, optionally at block 206, an aluminum oxide layer 104 may be formed on the second surface of the silicon substrate 102. In some embodiments, the aluminum oxide layer 104 may serve as a backside passivation film for the solar cell 100.
At block 208, a first silicon nitride layer 106 is formed on the second surface of the silicon substrate 102. In some embodiments, forming the first silicon nitride layer 106 includes depositing a silicon nitride film layer on the second surface of the silicon substrate 102 by PECVD.
When the first silicon nitride layer 106 is deposited on the second surface of the silicon substrate 102 by PECVD, even if the wraparound plating occurs, the plasma wrapped around to the first surface of the silicon substrate 102 spontaneously diffuses toward a region of lower concentration due to the influence of temperature. That is, to the voids of the porous silicon oxide layer 110 formed at block 202, thereby preferentially depositing silicon nitride in the voids of the porous silicon oxide layer 110. In this way, the small amount of silicon nitride deposited in the voids does not act as nucleation centers, thereby ensuring thickness uniformity of the subsequently deposited silicon nitride film layer.
At block 210, a second silicon nitride layer 112 is formed on the porous silicon oxide layer 110. In some embodiments, forming the second silicon nitride layer 112 includes depositing a silicon nitride film layer on the first surface of the silicon substrate 102 on which the porous silicon oxide layer 110 is formed by PECVD. In some embodiments, the second silicon nitride layer 112 serves as a front side anti-reflective film of the solar cell 100.
When the second silicon nitride layer 112 is deposited on the first surface of the silicon substrate 102, the thickness of the second silicon nitride layer 112 becomes more uniform due to the presence of the porous silicon oxide layer 110, as described above. In this way, the silicon nitride antireflection film has a uniform thickness, so that the performance of the solar cell can be ensured, the film color uniformity of the solar cell can be improved, and the phenomenon of edge whitening of the solar cell can be improved.
The silicon oxide layer 108 and the porous silicon oxide layer 110 formed as described above are referred to fig. 3. Fig. 3 is a cross-sectional schematic diagram illustrating a structure resulting in a method 200 according to an embodiment of the present disclosure. As shown in fig. 3, the first surface of the silicon substrate 102 has a textured surface, a silicon oxide layer 108 is formed on the first surface of the silicon substrate 102, and a porous silicon oxide layer 110 is formed on the silicon oxide layer 108.
Due to the porosity of the porous silicon oxide layer 110, oxygen in the oxygen atmosphere may pass through the porous silicon oxide layer 110 and reach the first surface of the silicon substrate 102 to react with silicon. Thus, the silicon oxide layer 108 is formed at the first surface of the silicon substrate 102 by thermal oxidation. The silicon oxide layer 108 is denser than the porous silicon oxide layer 110. In this way, a good quality front side passivation film of the solar cell 100 can be obtained.
Fig. 4 is a flow chart illustrating a method 400 for fabricating a solar cell according to another embodiment of the present disclosure. Method 400 may be implemented as an example of method 200, however method 200 is not limited to this implementation of method 400.
At block 402, the silicon substrate 102 with the PSG etched away is placed in a spray chamber. In some embodiments, the silicon substrate 102 with the PSG (phosphosilicate glass) etched away is placed in a spray chamber of a pyrolytic spray chamber.
In some embodiments, the pyrolysis spray chamber includes a spray chamber for spraying the porous silica slurry and an annealing chamber for preparing the silica layer and the porous silica layer.
It should be appreciated that prior to the process of block 402, the silicon substrate 102 for the solar cell is subjected to related processes known in the art. For example, in some embodiments, the silicon substrate 102 may be subjected to texturing, diffusion, front side laser, and etching processes. Through the texturing process, a textured surface is formed on the surface of the silicon substrate 102. Through the diffusion process, a PN junction is formed in the silicon substrate 102. The surface of the silicon substrate 102 is heavily doped by a front side laser process. The PSG formed on the silicon substrate 102 during the diffusion process is removed by an etching process.
With continued reference to fig. 4, at block 404, a porous silica slurry is sprayed on the front surface of the silicon substrate 102. In some embodiments, the porous silicon oxide slurry is sprayed on the front surface of the silicon substrate 102 through a nozzle in a spray chamber. In some embodiments, the orifice diameter of the nozzle is 0.2 mm. In some embodiments, the concentration of the porous silica slurry is 200 mM. In some embodiments, the porous silica slurry is configured such that the pore size of the resulting porous silica is between 10nm and 20 nm.
In some embodiments, nitrogen gas may be introduced into the spray chamber while spraying the porous silica slurry on the front surface of the silicon substrate 102 to ensure cleanliness of the spray chamber. Spraying the porous silica slurry in a nitrogen atmosphere will prevent the formation of white spots and smudges on the surface of the silicon substrate 102. In some embodiments, the flow rate of nitrogen gas to the spray chamber is 10000sccm and the flow time is 4 minutes.
At block 406, the silicon substrate 102 sprayed with the porous silicon oxide slurry is placed in an annealing chamber. In some embodiments, a large volume of nitrogen gas may be purged into the annealing chamber and the sprayed silicon substrates 102 are placed in a boat and fed into the annealing chamber at block 406. In some embodiments, the flow rate of nitrogen gas introduced into the annealing chamber is 10000sccm, and the introduction time is 10 seconds.
At block 408, the temperature of the annealing chamber is raised to a predetermined temperature in an atmosphere of nitrogen. In some embodiments, the solvent in the porous silica slurry is removed during the temperature increase. In some embodiments, after block 408, most of the solvent in the porous silica slurry is removed.
In some embodiments, the temperature of the annealing chamber is raised to 720 ℃. In some embodiments, after the temperature of the annealing chamber is raised to the predetermined temperature, a small amount of nitrogen and oxygen may be further introduced into the annealing chamber. In some embodiments, the flow rate of nitrogen gas into the annealing chamber is 6000sccm, the flow rate of oxygen gas into the annealing chamber is 200sccm, and the flow time is 15 minutes.
At block 410, a silicon substrate is thermally oxidized in an atmosphere of nitrogen and oxygen. In some embodiments, residual solvent in the porous silica slurry is removed during the thermal oxidation. In some embodiments, after block 410, the solvent in the porous silica slurry is completely removed. In some embodiments, the pore size of the porous silicon oxide layer 110 formed on the silicon substrate after block 410 is between 10nm and 20 nm.
In some embodiments, during the thermal oxidation, the silicon substrate 102 reacts with oxygen to form a silicon oxide layer on the surface of the silicon substrate 102. In some embodiments, the silicon oxide layer 108 is formed between the front surface of the silicon substrate 102 and the porous silicon oxide layer 110. In some embodiments, the annealing temperature for the thermal oxidation is set at 700 ℃ for 15 minutes.
At block 412, the annealed silicon substrate 102 is placed in a PECVD graphite boat and the aluminum oxide layer 104 and the first silicon nitride layer 106 are deposited on the back surface of the silicon substrate 102.
In some embodiments, the deposition process parameters of aluminum oxide layer 104 are: deposition power 4200W, deposition pressure 1500mTor, deposition duty cycle 2:100ms, laughing gas (N)2O) flow rate of 3000sccm, Al (CH)3)3Flow rate 81000sccm, deposition time 80 seconds. In some embodiments, the deposition process parameters of the first silicon nitride layer 106 are: deposition power 14220W, deposition pressure 1500mTor, deposition duty cycle 5:70ms, N2O flow 3000sccm, SiH4Flow 1000sccm, deposition time 180 seconds.
At block 414, a second silicon nitride layer 112 is deposited on the front surface of the silicon substrate 102. In some embodiments, the silicon substrate 102 is placed in a PECVD graphite boat and a silicon nitride antireflective film is deposited on the front surface of the silicon substrate 102. In some embodiments, the deposition process parameters of the second silicon nitride layer 112 are: the deposition temperature is 450 ℃, the deposition power is 10800W, the deposition pressure is 1500mTor, the deposition duty ratio is 2:30ms, NH3Flow 6800sccm, SiH4Flow 1000sccm, deposition time 220 seconds.
It should be appreciated that after block 414, the silicon substrate 102 for the solar cell is subjected to related processes known in the art. In some embodiments, the silicon substrate 102 may be further processed by backside laser, silver back electrode printing, aluminum back metal layer printing, positive electrode printing, etc., and a detailed description thereof is omitted here.
According to an embodiment of the present disclosure, a porous silicon oxide layer is deposited on the front surface of a silicon substrate before a back side silicon nitride layer is deposited on the back surface of the silicon substrate. Therefore, a small amount of silicon nitride around the front surface of the silicon substrate is deposited in the voids of the porous silicon oxide layer when depositing the back silicon nitride layer to avoid the small amount of silicon nitride from becoming nucleation centers. In this way, the thickness uniformity of the front anti-reflective film deposited subsequently is ensured, thereby improving the edge whitening phenomenon of the solar cell and improving the film color uniformity of the solar cell while ensuring the efficiency of the solar cell.
The above description is merely an alternative embodiment of the present disclosure and is not intended to limit the present disclosure. Various alternatives, modifications, and variations can be devised by those skilled in the art without departing from the spirit and principles of the disclosure. The present disclosure is intended to embrace all such alternatives, modifications and variances which fall within the scope of the appended claims.

Claims (10)

1. A method for fabricating a solar cell, comprising:
forming a porous silicon oxide layer on a first surface of the doped silicon substrate;
forming a first silicon nitride layer on a second surface of the silicon substrate opposite to the first surface; and
and forming a second silicon nitride layer on the porous silicon oxide layer.
2. The method of claim 1, wherein forming the porous silicon oxide layer comprises: forming a porous silica layer having a pore size of between 10nm and 20 nm.
3. The method of claim 1, wherein forming the porous silicon oxide layer comprises:
spraying a porous silica slurry on the first surface of the silicon substrate; and
and annealing the silicon substrate sprayed with the porous silicon oxide slurry to form the porous silicon oxide layer.
4. The method of claim 3, wherein annealing the silicon substrate comprises:
placing the silicon substrate in an annealing chamber;
raising the temperature of the annealing chamber to a predetermined temperature in an atmosphere of nitrogen gas; and
the silicon substrate is thermally oxidized in an atmosphere of nitrogen and oxygen.
5. The method of claim 4, wherein a silicon oxide layer is formed between the first surface of the silicon substrate and the porous silicon oxide layer by thermally oxidizing the silicon substrate.
6. The method of claim 1, further comprising:
forming an aluminum oxide layer on the second surface of the silicon substrate after forming the porous silicon oxide layer and before forming the first silicon nitride layer.
7. A solar cell, comprising:
a silicon substrate including a PN junction and having a first surface and a second surface opposite to the first surface;
a first silicon nitride layer on the second surface of the silicon substrate;
a second silicon nitride layer on the first surface of the silicon substrate; and
a porous silicon oxide layer between the first surface of the silicon substrate and the second silicon nitride layer.
8. The solar cell of claim 7, wherein the pore size of the porous silica layer is between 10nm and 20 nm.
9. The solar cell of claim 7, further comprising:
a silicon oxide layer between the first surface of the silicon substrate and the porous silicon oxide layer.
10. The solar cell of claim 7, further comprising:
an aluminum oxide layer between the second surface of the silicon substrate and the first silicon nitride layer.
CN201911324546.1A 2019-12-20 2019-12-20 Method for producing a solar cell and solar cell Active CN111129217B (en)

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