CN102064231A - Method for preparing solar cell - Google Patents
Method for preparing solar cell Download PDFInfo
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- CN102064231A CN102064231A CN2009102377016A CN200910237701A CN102064231A CN 102064231 A CN102064231 A CN 102064231A CN 2009102377016 A CN2009102377016 A CN 2009102377016A CN 200910237701 A CN200910237701 A CN 200910237701A CN 102064231 A CN102064231 A CN 102064231A
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Abstract
The invention discloses a method for preparing a solar cell, which comprises the following steps: providing a substrate; putting the substrate in a first-concentration alkali solution so as to respectively form a textured surface on the upper and lower surfaces of the substrate; carrying out doping on the substrate with textured surfaces so as to respectively form a doped layer on the upper and lower surfaces of the substrate; depositing a protective layer on the upper surface of the substrate with the doped layer; immerging the substrate in a second-concentration alkali solution so as to polish the lower surface of the substrate; and carrying out screen printing on the upper and lower surfaces of the polished substrate to form electrodes, thereby forming the solar cell. In the method provided by the invention, the protective layer is deposited on the doped upper surface of the substrate, and the substrate with the protective layer is arranged in the high-concentration alkali solution to be polished so as to obtain the cell plate, of which the upper surface has a textured surface structure and the lower surface is flat and smooth. Thus, the method provided by the invention enhances the light utilization ratio of the cell, has a technological process which is easy to control, and does not have special requirements for the working environment.
Description
Technical field
The present invention relates to solar cell and make the field, particularly relate to a kind of method for preparing solar cell.
Background technology
Along with the minimizing day by day of traditional energy, solar cell more and more is subject to people's attention as a kind of regenerative resource.How improving battery efficiency, reducing the battery cost is the target that people make great efforts always.
At present, aspect the raising battery efficiency, the preparation suede structure is the operation together commonly used in the monocrystaline silicon solar cell preparation, its objective is the reflection loss of minimizing incident light at silicon chip surface, increases the utilance of light.
Because suede structure can make incident light that repeatedly reflection takes place, and reflectivity is reduced to 9.04% by 33% of light face structure, therefore can make reflection loss reduce about 2/3.
Existing making herbs into wool technology comprises: methods such as chemical corrosion method, plasma etching, mechanical V-knife cutting, laser grooving.Though method such as plasma etching, laser grooving can prepare the single face suede structure, because the cost costliness only limits to laboratory stage at present.Though machinery V-knife cutting cost is lower, because it is to utilize V-knife to form groove in the silicon chip surface friction, and silicon chip has hard and crisp characteristics, so this method shaping rate is low, silicon chip is very easily damaged.
So preparation monocrystalline silicon suede structure mainly adopts chemical corrosion method in the industrial production.This method is utilized the anisotropy of monocrystalline silicon piece corrosion, and monocrystalline silicon piece is directly immersed in the described low-concentration alkali liquor.Therefore the aqueous slkali of low concentration has different corrosion rates to crystalline silicon on different crystal orientations, erode away the surface topography of the Pyramid that gathers at silicon chip surface, have cost low, be easy to advantage such as large-scale production.
The preparation flow of monocrystaline silicon solar cell such as Fig. 1-shown in Figure 5: a monocrystalline substrate 10 ' that cleans up (Fig. 1) is provided, it is the aqueous slkali of 1%-2% that substrate 10 ' is placed concentration, at 70-90 ℃ of following corrosion 20-40min, form two suede structures (Fig. 2) in the upper and lower surface of described substrate; Substrate 11 ' the system of mixing is tied (to the common boron-doping element of P type substrate), form doped layer 20 ', doped layer 30 ' (Fig. 3) respectively in substrate 11 ' upper and lower surface; To substrate 11 ' trimming, remove PSG (Phosphosilicate Glass, phosphosilicate glass) and deposition SiN film 40 ' (Fig. 4); The upper and lower surface of substrate 11 ' is carried out screen printing electrode 50 ' and back electrode 60 ' respectively, form monocrystaline silicon solar cell (Fig. 5).
But as can be seen from the figure, this method can be corroded simultaneously on the upper and lower surface of silicon chip, causes two suede structures.And the shady face of battery is to wish to obtain smooth planar structure, to strengthen reflection of light, makes the incident light that penetrates silicon chip to reflect back, and obtains once more to absorb.And two suede structures can make in the silicon chip about 2/3 light directly transmit outside the cell body, have reduced battery efficiency.
And, have the battery of two suede structures, behind the slurry that prints electrode,, there is hole between slurry and the silicon chip easily with respect to light face structure, when carrying out the back electrode sintering process, very easily produce " aluminium bubble " phenomenon follow-up, cause electrode loose contact.
Therefore, at the shortcoming of above-mentioned pair of suede structure, in the application for a patent for invention prospectus that on August 8th, 2007, disclosed publication number was CN101015037, put down in writing a kind of solution for preparing the single face matte.Its basic thought is: silicon chip is placed on the roller, when silicon chip moves through corrosive liquid, only the lower surface of silicon chip is immersed in and carries out making herbs into wool in the corrosive liquid and handle, the silicon chip upper surface that does not immerse corrosive liquid still keeps original pattern, finally forms the structure of single face matte.
Because the thickness of silicon chip own has only 200～300 μ m, therefore very high to the requirement of Equipment Control, the control of corrosion liquid level required very accurate, too high/cross low will occur the quarter/part of not carving, therefore the cost that equipment is dropped into is very high.In addition, the operational environment of equipment is also had certain requirement, the small sample perturbations of environment all can produce considerable influence to liquid surface height controlling.
Summary of the invention
The purpose of this invention is to provide a kind of method for preparing solar cell, equipment and operational environment are required too high problem to solve prior art for preparing single face matte solar cell.
The invention provides a kind of method for preparing solar cell, described method comprises:
One substrate is provided;
Described substrate is placed the aqueous slkali of first concentration, form matte with upper and lower surface at described substrate;
The substrate that the forms matte system of mixing is tied, formed doped layer with upper and lower surface at described substrate;
Upper surface deposition protective layer at the described substrate that has doped layer;
Described substrate is immersed in the aqueous slkali of second concentration, polish with lower surface to described substrate;
Upper and lower surface in described polishing back substrate is carried out screen printing electrode, forms solar cell.
Preferably, the material of described protective layer is a silicon nitride.
Concrete, the technology that deposits described silicon nitride can be plasma enhanced chemical vapor deposition or sputter.
Preferably, the target of described sputtering technology employing is high purity silicon nitride ceramic target or high-purity silicon target.
Preferably, described second concentration is 20%-30%.
Preferably, the reaction temperature of described substrate in the second concentration aqueous slkali is 70 ℃-90 ℃.
Preferably, the reaction time of described substrate in the second concentration aqueous slkali is 1-3 minute.
Preferably, the aqueous slkali of described second concentration is NaOH, KOH or its combination.
Preferably, also comprise the reactivity agent in the aqueous slkali of described second concentration.
Concrete, described reactivity agent can be isopropyl alcohol, ethanol or its combination.
The method for preparing solar cell of the present invention, by the substrate top surface deposition protective layer behind the system knot that mixes, and the substrate that will have protective layer places high concentration alkali solution to polish, obtain upper surface and had suede structure, the smooth smooth battery sheet of lower surface, can in the anti-reflection incident light of battery upper surface, strengthen the battery lower surface to reflection of incident light, improved the utilance of battery to light, technical process is easy to control and operational environment do not had specific (special) requirements; By removing the doped layer of substrate lower surface, can reduce the compound of charge carrier and doped layer, improve the photoelectric conversion efficiency of solar cell; After the lower surface of substrate was polished smooth plane, " aluminium bubble " phenomenon of back electrode significantly reduced, and has improved the total quality of solar cell; Protective layer among the present invention can further improve the penetrate rate of incident light at the battery upper surface, and can well merge with existing solar cell preparation technology simultaneously as anti-reflecting layer, need not adjust production line, saves cost.
Description of drawings
Fig. 1～Fig. 5 is the schematic diagram of the method for preparing solar cell of prior art;
Fig. 6 is the schematic flow sheet that the present invention prepares the method for solar cell;
Fig. 7～Figure 12 is the schematic diagram that the present invention prepares the method for solar cell.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the embodiment of the invention is described in further detail below in conjunction with the drawings and specific embodiments.
The inventor is by analyzing existing chemical corrosion method, find if can be after substrate forms two suede structures, the matte of substrate lower surface is removed, also can realize the light in the battery being reflected, improve the utilance of light by the anti-reflection extinction of the suede structure of substrate top surface, light face structure by lower surface.After a large amount of experiments of experience are attempted, formed technical scheme of the present invention.Below in conjunction with accompanying drawing technical scheme of the present invention is described in detail.
The invention provides a kind of method for preparing solar cell, as shown in Figure 6, comprising:
S101 provides a substrate (referring to Fig. 7).
Described substrate 10 needs to carry out clean before use.Backing material can have a variety of selections, for example monocrystalline silicon, polysilicon, amorphous silicon, monocrystalline germanium etc.
S102 places the aqueous slkali of first concentration with described substrate, forms matte (referring to Fig. 8) with the upper and lower surface at described substrate.
Described first concentration is 1%-2%, and the aqueous slkali of described first concentration can be NaOH, KOH or its combination etc.The reaction temperature of substrate 11 in the aqueous slkali of first concentration is preferably 70 ℃-90 ℃, and the reaction time is 20-40min.If the reaction time is too short, can there be incomplete suede structure in some zone on substrate 11 surfaces, if the reaction time is long, suede structure can be by overetch, and these all can influence the translucent effect of battery, reduces the conversion efficiency of solar cell.
S103 ties the substrate that the forms matte system of mixing, and forms doped layer (referring to Fig. 9) with the upper and lower surface at described substrate.
Main system knot mode comprises thermal diffusion, ion injection, extension, laser and high-frequency electrical injection etc.With present conventional thermal diffusion process P elements is example, with liquid POCl
3Be reaction source, diffusion temperature is 900-1000 ℃, and be 30-60min, wherein O diffusion time
2Excessive, chemical equation is as follows:
4POCl
3+3O
2→2P
2O
5+6Cl
2↑，2P
2O
5+5Si→5SiO
2+4P
S104 is at the upper surface deposition protective layer (referring to Figure 10) of the described substrate that has doped layer.
Before substrate 11 deposition protective layers 40, the operation that need carry out trimming, remove PSG substrate 11.
The material of described protective layer 40 is a silicon nitride etc., is preferably silicon nitride, and the thickness of silicon nitride is about 70-90nm.Can adopt PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition) technology or sputtering technology etc. are at the surface deposition silicon nitride of doped layer 20, for sputtering technology, can adopt the high purity silicon nitride ceramic target; Also can adopt high-purity silicon target, in N2 atmosphere, carry out sputter.Described protective layer 40 is used for the process in follow-up high concentration alkali solution polishing, and the matte of protection substrate 11 upper surfaces is not corroded by aqueous slkali.Because protective layer 40 except the corrosion that can resist high concentration alkali solution, can also further improve the ratio that incident light penetrates battery as the anti-reflecting layer of solar cell, and need not adjust the existing processes flow process, save cost.
S105 immerses described substrate in the aqueous slkali of second concentration, polishes (referring to Figure 11) with the lower surface to described substrate.
Described second concentration can be 20%-30%, and the aqueous slkali of second concentration can be NaOH, KOH or its combination etc.Excessive concentration can make protective layer 40 damage can occur, and concentration is crossed the low polishing action that do not have again.Therefore, the aqueous slkali of this concentration range can carry out isotropic etch to substrate 11 in injury protection layer 40 not, thereby reaches the purpose (but not making herbs into wool) to substrate 11 polishings.The upper surface that protective layer 40 can be protected substrate 11 not with the aqueous slkali generation chemical reaction of second concentration; And substrate 11 lower surfaces are not owing to there is the protection of protective layer 40, will in the aqueous slkali of second concentration isotropic etch take place and polished.
The reaction temperature of substrate 11 in the second concentration aqueous slkali is 70 ℃-90 ℃, and the reaction time is 1-3min (overlong time can cause battery thin excessively), and chemical reaction equation is as follows:
Si+2NaOH+H
2O→Na
2SiO
3+2H
2↑
Thus, the suede structure and doped layer 30 reactions of substrate 11 lower surfaces can be got rid of, obtain the solar battery sheet of lower surface polishing.
Preferably, in the aqueous slkali of second concentration, also include the reactivity agent, be used to regulate the speed of polishing reaction, make that the polishing of substrate 11 is more even.Described reactivity agent can comprise isopropyl alcohol, ethanol or its combination etc.
In the prior art, the doped layer of solar cell lower surface can attract the charge carrier in the substrate, and compound with charge carrier, has reduced the conversion efficiency of solar cell.
The present invention also removes the doped layer of lower surface when removing suede structure, and it is compound to have reduced charge carrier, has improved battery efficiency.
S106 carries out screen printing electrode in the upper and lower surface of described polishing back substrate, forms solar cell (referring to Figure 12).
The method for preparing solar cell of the present invention, by the substrate top surface deposition protective layer behind the system knot that mixes, and the substrate that will have protective layer places high concentration alkali solution to polish, obtain upper surface and had suede structure, the smooth smooth battery sheet of lower surface, can in the anti-reflection incident light of battery upper surface, strengthen the battery lower surface to reflection of incident light, improved the utilance of battery to light, technical process is easy to control and operational environment do not had specific (special) requirements; By removing the doped layer of substrate lower surface, can reduce the compound of charge carrier and doped layer, improve the photoelectric conversion efficiency of solar cell; After the lower surface of substrate was polished smooth plane, " aluminium bubble " phenomenon of back electrode significantly reduced, and has improved the total quality of solar cell; Protective layer among the present invention can further improve the penetrate rate of incident light at the battery upper surface, and can well merge with existing solar cell preparation technology simultaneously as anti-reflecting layer, need not adjust production line, saves cost.
Need to prove, in this article, relational terms such as first and second grades only is used for an entity or operation are made a distinction with another entity or operation, and not necessarily requires or hint and have the relation of any this reality or in proper order between these entities or the operation.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thereby make and comprise that process, method, article or the equipment of a series of key elements not only comprise those key elements, but also comprise other key elements of clearly not listing, or also be included as this process, method, article or equipment intrinsic key element.Do not having under the situation of more restrictions, the key element that limits by statement " comprising ... ", and be not precluded within process, method, article or the equipment that comprises described key element and also have other identical element.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.All any modifications of being done within the spirit and principles in the present invention, be equal to replacement, improvement etc., all be included in protection scope of the present invention.
Claims (10)
1. a method for preparing solar cell is characterized in that, described method comprises:
One substrate is provided;
Described substrate is placed the aqueous slkali of first concentration, form matte with upper and lower surface at described substrate;
The substrate that the forms matte system of mixing is tied, formed doped layer with upper and lower surface at described substrate;
Upper surface deposition protective layer at the described substrate that has doped layer;
Described substrate is immersed in the aqueous slkali of second concentration, polish with lower surface to described substrate;
Upper and lower surface in described polishing back substrate is carried out screen printing electrode, forms solar cell.
2. the method for claim 1 is characterized in that, the material of described protective layer is a silicon nitride.
3. method as claimed in claim 2 is characterized in that, the technology that deposits described silicon nitride is plasma enhanced chemical vapor deposition or sputter.
4. method as claimed in claim 3 is characterized in that, the target that described sputtering technology adopts is high purity silicon nitride ceramic target or high-purity silicon target.
5. the method for claim 1 is characterized in that, described second concentration is 20%-30%.
6. method as claimed in claim 5 is characterized in that, the reaction temperature of described substrate in the second concentration aqueous slkali is 70 ℃-90 ℃.
7. method as claimed in claim 5 is characterized in that, the reaction time of described substrate in the second concentration aqueous slkali is 1-3 minute.
8. the method for claim 1 is characterized in that, the aqueous slkali of described second concentration is NaOH, KOH or its combination.
9. as each described method of claim 1-8, it is characterized in that, also comprise the reactivity agent in the aqueous slkali of described second concentration.
10. method as claimed in claim 9 is characterized in that, described reactivity agent is isopropyl alcohol, ethanol or its combination.
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| CN2009102377016A CN102064231A (en) | 2009-11-16 | 2009-11-16 | Method for preparing solar cell |
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| CN2009102377016A CN102064231A (en) | 2009-11-16 | 2009-11-16 | Method for preparing solar cell |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428450A (en) * | 2015-12-16 | 2016-03-23 | 晋能清洁能源科技有限公司 | Alkaline polishing method during production of passivated emitter rear contact (PERC) crystalline silicon solar cell |
| CN106486566A (en) * | 2016-10-27 | 2017-03-08 | 太极能源科技（昆山）有限公司 | A kind of preparation method of solar battery sheet |
| CN109887841A (en) * | 2019-01-21 | 2019-06-14 | 苏州爱康光电科技有限公司 | A kind of PERC cell backside polishing process |
| CN115241300A (en) * | 2021-04-22 | 2022-10-25 | 苏州阿特斯阳光电力科技有限公司 | Solar cell and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3968000B2 (en) * | 2002-11-26 | 2007-08-29 | 京セラ株式会社 | Method for forming solar cell element |
| CN101150148A (en) * | 2007-11-02 | 2008-03-26 | 宁波杉杉尤利卡太阳能科技发展有限公司 | Novel aluminum emitter junction N type single crystal silicon solar battery |
| CN101414646A (en) * | 2007-10-17 | 2009-04-22 | 倪党生 | A kind of new technique for manufacturing thin-film solar cell |
| CN101499501A (en) * | 2009-03-02 | 2009-08-05 | 苏州阿特斯阳光电力科技有限公司 | Phosphorus diffusion method for fabricating gallium doped monocrystaline silicon solar cell |
-
2009
- 2009-11-16 CN CN2009102377016A patent/CN102064231A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3968000B2 (en) * | 2002-11-26 | 2007-08-29 | 京セラ株式会社 | Method for forming solar cell element |
| CN101414646A (en) * | 2007-10-17 | 2009-04-22 | 倪党生 | A kind of new technique for manufacturing thin-film solar cell |
| CN101150148A (en) * | 2007-11-02 | 2008-03-26 | 宁波杉杉尤利卡太阳能科技发展有限公司 | Novel aluminum emitter junction N type single crystal silicon solar battery |
| CN101499501A (en) * | 2009-03-02 | 2009-08-05 | 苏州阿特斯阳光电力科技有限公司 | Phosphorus diffusion method for fabricating gallium doped monocrystaline silicon solar cell |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428450A (en) * | 2015-12-16 | 2016-03-23 | 晋能清洁能源科技有限公司 | Alkaline polishing method during production of passivated emitter rear contact (PERC) crystalline silicon solar cell |
| CN106486566A (en) * | 2016-10-27 | 2017-03-08 | 太极能源科技（昆山）有限公司 | A kind of preparation method of solar battery sheet |
| CN109887841A (en) * | 2019-01-21 | 2019-06-14 | 苏州爱康光电科技有限公司 | A kind of PERC cell backside polishing process |
| CN115241300A (en) * | 2021-04-22 | 2022-10-25 | 苏州阿特斯阳光电力科技有限公司 | Solar cell and preparation method thereof |
| CN115241300B (en) * | 2021-04-22 | 2023-11-17 | 苏州阿特斯阳光电力科技有限公司 | Solar cell and preparation method thereof |
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Application publication date: 20110518 |