CN102769070A - Efficient solar cell manufacturing method - Google Patents

Efficient solar cell manufacturing method Download PDF

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CN102769070A
CN102769070A CN2012102469804A CN201210246980A CN102769070A CN 102769070 A CN102769070 A CN 102769070A CN 2012102469804 A CN2012102469804 A CN 2012102469804A CN 201210246980 A CN201210246980 A CN 201210246980A CN 102769070 A CN102769070 A CN 102769070A
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finished product
semi
nitride film
silicon nitride
solar battery
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CN102769070B (en
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余洋
职森森
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ZHEJIANG BEYONDSUN PV CO Ltd
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ZHEJIANG BEYONDSUN PV CO Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses an efficient solar cell manufacturing method. The method comprises the step of: sequentially performing felting, diffusion, etching, phosphosilicate glass (PSG) removal process, back polishing, plasma enhanced chemical vapor deposition (PECVD), printing of a back electrode and a back field, sintering, phosphor coating, laser doping and electroplating process on a silicon chip to be produced. The efficient solar cell manufacturing method has the advantages that the effective working area of the front surface of a cell piece is improved, the short-circuit current of a cell is improved, and the conversion efficiency of the cell is effectively improved.

Description

A kind of method for manufacturing solar battery efficiently
Technical field
The present invention relates to a kind of method for manufacturing solar battery efficiently, belong to the silicon electron trade.
Background technology
The method of conventional solar cell employing silk screen printing prepares positive electrode and negative electrode at cell cathode and anode printed silver slurry, prepares aluminium back of the body field at galvanic anode printing aluminium paste, and preparation method's simple and reliable process of this conductive electrode is easy to extensive one-tenth and produces.But be limited by the restriction of silk-screen printing technique; The secondary grid line of its front metal is thicker, and its width designs but also must adopt lower emitter side to hinder generally greater than 80 μ m; Its non-grid region side resistance is generally at 50 ~ 70ohm/sq; The secondary grid line design reduction of thicker front metal effective work of battery area, lower emitter side's resistance design has reduced the short circuit current of battery, thereby has restricted the lifting of conversion efficiency of solar cell.
Summary of the invention
The present invention provides a kind of and can effectively promote battery conversion efficiency and the high method for manufacturing solar battery of production efficiency for solving the prior art problem.
Technical scheme of the present invention is: a kind of method for manufacturing solar battery efficiently may further comprise the steps:
A) silicon chip of treating production carries out making herbs into wool, diffusion, etching successively and goes PSG technology, processes semi-finished product one time;
B) placing the alkali lye of heating to carry out polished backside said once half-finished silicon chip handles, processes the secondary semi-finished product;
C) said secondary semi-finished product are carried out pecvd process, process three semi-finished product of one side with silicon nitride film;
The one side of d) not attaching said silicon nitride film at said three semi-finished product is printed back of the body electric field and back electrode through silk-screen printing technique, and sintering, processes semi-finished product four times;
E) evenly apply one deck phosphorus liquid at said four semi-finished product with the one side of said silicon nitride film; Adopt laser on said silicon nitride film, to scan by the figure of technological requirement; Form thin grid fluting, and form the heavy doping emitter, process semi-finished product five times at this thin grid fluting place;
F) said five semi-finished product are put into included HF, NH 3H 2O, PbCl 2Mixed solution in; These five semi-finished product are carried out activation with the one side of said silicon nitride film; Then five semi-finished product after the activation are deposited the thick nickel dam of 0.2 ~ 0.8 μ m through chemically coated nickel method on said heavy doping emitter, sintering after accomplishing is processed semi-finished product six times;
G) on the nickel dam of said six half-finished said heavy doping emitters, deposit the thick copper layer of 20 ~ 40 μ m, on this copper layer, deposit the thick silver layer of 1 ~ 5 μ m then, process battery sheet finished product.
The present invention has abandoned the technology that adopts the secondary grid line of silk-screen printing technique manufacture batteries sheet front metal in the original production; But adopt the photoinduction electroplating technology; Make the width of secondary grid line drop to 25 ~ 50 μ m; Reduce secondary grid line area effectively, promoted effective work area of battery front side, improved the conversion efficiency of battery; Increased the cell backside glossing; Increased the reflection of light, helped to improve the utilance of long wavelength light, adopted the battery of polished backside technology to compare with conventional solar cell at inside battery at inside battery; (900-1100nm) falls into the light effect enhancing in long wavelength's scope; And cost is low, and technology is easy, and is easy to operate.Simultaneously, adopt laser ablation and phosphorus etching process, effectively reduce side's resistance of heavily doped emitter, grid region side's resistance 20 ~ 50ohm/sq, non-grid region side hinders 90 ~ 120ohm/sq, has further improved the conversion efficiency of battery.
As preferably, in step a, in the diffusion process, earlier said silicon chip is heated to 810 ~ 830 ℃, adopt POCl3 to spread as diffuse source.
As preferably, in diffusion technology, be 15 ~ 30 minutes the perdurabgility of diffusion.
The present invention adopts shallow junction gently to mix diffusion technology, forms lower surface impurity concentration, effectively reduces the impurity complex centre of battery front side, improves the survival rate of minority carrier, increases the response to shortwave simultaneously, effectively improves the short circuit current of battery.
As preferably, in step b, said alkali lye is the NaOH solution of mass ratio 1 ~ 5%, and the temperature of said heating is 75 ~ 85 ℃, and be 1 ~ 5 minute the perdurabgility of said polishing.The back side smooth that this PROCESS FOR TREATMENT is crossed, the internal light reflection at the back side and long wavelength zone quantum efficiency all increase to some extent.
As preferably, in step c, said pecvd process employing flow-rate ratio is 0.09 ~ 0.15 SiH 4And NH 3The silicon nitride film that to deposit two-layer at least gross thickness be 85 ~ 95nm; Temperature in the said pecvd process process is 430 ~ 470 ℃, and the duration is 10 ~ 15 minutes.The present invention adopts the multilayer filming technology, and the finished product Irev2 that makes is extremely low, and the finished product that Rsh processes than traditional handicraft improves a lot; Fill factor, curve factor FF reaches the traditional handicraft level; Greatly improved the conversion efficiency of silion cell, and technological process need not increase extras, improvement cost is cheap; The resistance of silicon chip side changes small, does not influence the quality of finished product.
As preferably, in steps d, said back of the body electric field is processed through the silk screen printing aluminium paste, and said back electrode is processed through silk screen printing silver slurry.
As preferably, in step e, said phosphorus liquid is the mixed liquor that includes phosphoric acid, alcohol, water and acetone, and wherein, the mass ratio of phosphoric acid is 30 ~ 45%; Said spin coating or the spraying method of being applied to.
As preferably, said laser is that wavelength is the green light pulse laser of 500 ~ 550nm, laser power 2 ~ 10W.
Laser scans silicon chip surface by technological requirement, is destroyed by the silicon nitride film of the silicon chip surface after the laser scanning and matte, and phosphorus liquid and silicon chip produce reaction, form local heavy doping, form heavily doped emitter; Through actual debugging, the laser of this wavelength scans with this power, and the situation of grid line is best, reduces like power, and then grid line is prone to broken string, raises like power, and then grid line is prone to the squamous damage.
As preferably, in step f, said soak time is 25 ~ 40 seconds.
As preferably, in step a, in the diffusion process, earlier said silicon chip is heated to 810 ~ 830 ℃, adopt POCl 3Spread as diffuse source; In diffusion technology, be 15 ~ 30 minutes the perdurabgility of diffusion; In step b, said alkali lye is the NaOH solution of mass ratio 1 ~ 5%, and the temperature of said heating is 75 ~ 85 ℃, and be 1 ~ 5 minute the perdurabgility of said polishing; In step c, said pecvd process employing flow-rate ratio is 0.09 ~ 0.15 SiH 4And NH 3The silicon nitride film that to deposit two-layer at least gross thickness be 85 ~ 95nm; Temperature in the said pecvd process process is 430 ~ 470 ℃, and the duration is 10 ~ 15 minutes; In steps d, said back of the body electric field is processed through the silk screen printing aluminium paste, and said back electrode is processed through silk screen printing silver slurry; In step e, said phosphorus liquid is the mixed liquor that includes phosphoric acid, alcohol, water and acetone, and wherein, the mass ratio of phosphoric acid is 30 ~ 45%; Said spin coating or the spraying method of being applied to; Said laser is that wavelength is the green light pulse laser of 500 ~ 550nm, laser power 5 ~ 6W; In step f, said soak time is 25 ~ 40 seconds;
In sum, the present invention improves the conversion efficiency of battery effectively through improving positive effective work area of battery sheet and the short circuit current that improves battery.
Embodiment
With embodiment the present invention is described further below.
Embodiment one:
A kind of method for manufacturing solar battery efficiently may further comprise the steps:
A) silicon chip of treating production at first carries out making herbs into wool, is heated to 820 ℃ then, adopts POCl 3Spread as diffuse source, spread and carry out etching after 20 minutes successively and go PSG technology, process semi-finished product one time;
B) said once half-finished silicon chip is placed be heated to 80 ℃, the NaOH solution of mass ratio 3%, continue 3 minutes, carry out polished backside and handle, process the secondary semi-finished product;
C) said secondary semi-finished product are carried out pecvd process, the employing flow-rate ratio is 0.10 SiH 4And NH 3, under 450 ℃ temperature, sustained response 12 minutes deposits three layers of silicon nitride film that gross thickness is 90nm, processes three semi-finished product of one side with silicon nitride film;
The one side of d) not attaching said silicon nitride film at said three semi-finished product is processed back of the body electric field through the silk screen printing aluminium paste, processes back electrode through silk screen printing silver slurry, and in sintering furnace with 700 ℃ temperature sintering, process semi-finished product four times;
E) evenly apply mixed liquor that one deck include phosphoric acid, alcohol, water and acetone with the one side of said silicon nitride film through spin coating or spraying method at said four semi-finished product, wherein the mass ratio of phosphoric acid is 30 ~ 45%; Adopting wavelength then is that the green light pulse laser of 532nm, power 5.5W scans on said silicon nitride film by the figure of technological requirement; Form width 12 μ m; The thin grid fluting of spacing 1.0mm; And in this side of formation, thin grid fluting place resistance is the heavy doping emitter of 40ohm/sq, process semi-finished product five times;
F) said five semi-finished product are put into included HF, NH 3H 2O, PbCl 2Mixed solution in; These five semi-finished product were carried out activation 36 seconds with the one side of said silicon nitride film; Then five semi-finished product after the activation being deposited the thick nickel dam of 0.6 μ m through chemically coated nickel method on said heavy doping emitter, is 370 ℃ and gassy N in temperature 2Sintering furnace in sintering 6 minutes, process semi-finished product six times;
G) the thick copper layer of deposition 34 μ m on the nickel dam of said six half-finished said heavy doping emitters, oxidized in the medium-term and long-term use of air for preventing copper, the thick silver layer of deposition 4 μ m is processed battery sheet finished product on this copper layer.
Embodiment two:
A kind of method for manufacturing solar battery efficiently may further comprise the steps:
A) silicon chip of treating production at first carries out making herbs into wool, is heated to 810 ℃ then, adopts POCl 3Spread as diffuse source, spread and carry out etching after 15 minutes successively and go PSG technology, process semi-finished product one time;
B) said once half-finished silicon chip is placed be heated to 75 ℃, the NaOH solution of mass ratio 1%, continue 1 minute, carry out polished backside and handle, process the secondary semi-finished product;
C) said secondary semi-finished product are carried out pecvd process, the employing flow-rate ratio is 0.09 SiH 4And NH 3, under 430 ℃ temperature, sustained response 10 minutes, the silicon nitride film that to deposit two-layer at least gross thickness be 85nm is processed three semi-finished product of one side with silicon nitride film;
The one side of d) not attaching said silicon nitride film at said three semi-finished product is processed back of the body electric field through the silk screen printing aluminium paste, processes back electrode through silk screen printing silver slurry, and in sintering furnace with 400 ℃ temperature sintering, process semi-finished product four times;
E) evenly apply mixed liquor that one deck include phosphoric acid, alcohol, water and acetone with the one side of said silicon nitride film through spin coating or spraying method at said four semi-finished product, wherein the mass ratio of phosphoric acid is 30%; Adopting wavelength then is that the green light pulse laser of 500nm, power 2W scans on said silicon nitride film by the figure of technological requirement; Form width 10 μ m; The thin grid fluting of spacing 1.0mm, and the heavy doping emitter that hinders 20ohm/sq in this side of formation, thin grid fluting place are processed semi-finished product five times;
F) said five semi-finished product are put into included HF, NH 3H 2O, PbCl 2Mixed solution in; These five semi-finished product were carried out activation 25 seconds with the one side of said silicon nitride film; Then five semi-finished product after the activation are deposited the thick nickel dam of 0.2 μ m through chemically coated nickel method on said heavy doping emitter, at 300 ℃ of temperature and gassy N 2Sintering furnace in sintering 2 minutes, process semi-finished product six times;
G) on the nickel dam of said six half-finished said heavy doping emitters, deposit the thick copper layer of 20 μ m, then battery is applied the electric field of a 0.05A, in electric field, on this copper layer, deposit the thick silver layer of 1 μ m, process battery sheet finished product.
Embodiment three:
A kind of method for manufacturing solar battery efficiently may further comprise the steps:
A) silicon chip of treating production at first carries out making herbs into wool, is heated to 830 ℃ then, adopts POCl 3Spread as diffuse source, spread and carry out etching after 30 minutes successively and go PSG technology, process semi-finished product one time;
B) said once half-finished silicon chip is placed be heated to 85 ℃, the NaOH solution of mass ratio 5%, continue 5 minutes, carry out polished backside and handle, process the secondary semi-finished product;
C) said secondary semi-finished product are carried out pecvd process, the employing flow-rate ratio is 0.15 SiH 4And NH 3, under 470 ℃ temperature, sustained response 15 minutes, the silicon nitride film that to deposit two-layer at least gross thickness be 95nm is processed three semi-finished product of one side with silicon nitride film;
The one side of d) not attaching said silicon nitride film at said three semi-finished product is processed back of the body electric field through the silk screen printing aluminium paste, processes back electrode through silk screen printing silver slurry, and in sintering furnace with 900 ℃ temperature sintering, process semi-finished product four times;
E) evenly apply mixed liquor that one deck include phosphoric acid, alcohol, water and acetone with the one side of said silicon nitride film through spin coating or spraying method at said four semi-finished product, wherein the mass ratio of phosphoric acid is 45%; Adopting wavelength then is that the green light pulse laser of 550nm, power 10W scans on said silicon nitride film by the figure of technological requirement; Form width 15 μ m; The thin grid fluting of spacing 1.0mm; And in this side of formation, thin grid fluting place resistance is the heavy doping emitter of 50ohm/sq, process semi-finished product five times;
F) said five semi-finished product are put into included HF, NH 3H 2O, PbCl 2Mixed solution in; These five semi-finished product were carried out activation 40 seconds with the one side of said silicon nitride film; Then five semi-finished product after the activation being deposited the thick nickel dam of 0.8 μ m through chemically coated nickel method on said heavy doping emitter, is 400 ℃ and gassy N in temperature 2Sintering furnace in sintering 10 minutes, process semi-finished product six times;
G) on the nickel dam of said six half-finished said heavy doping emitters, deposit the thick copper layer of 40 μ m, then battery is applied the electric field of a 0.5A, in electric field, on this copper layer, deposit the thick silver layer of 5 μ m, process battery sheet finished product.
Embodiment three:
A kind of method for manufacturing solar battery efficiently may further comprise the steps:
A) silicon chip of treating production at first carries out making herbs into wool, is heated to 830 ℃ then, adopts POCl 3Spread as diffuse source, spread and carry out etching after 30 minutes successively and go PSG technology, process semi-finished product one time;
B) said once half-finished silicon chip is placed be heated to 85 ℃, the NaOH solution of mass ratio 5%, continue 5 minutes, carry out polished backside and handle, process the secondary semi-finished product;
C) said secondary semi-finished product are carried out pecvd process, the employing flow-rate ratio is 0.15 SiH 4And NH 3, under 470 ℃ temperature, sustained response 15 minutes, the silicon nitride film that to deposit two-layer at least gross thickness be 95nm is processed three semi-finished product of one side with silicon nitride film;
The one side of d) not attaching said silicon nitride film at said three semi-finished product is processed back of the body electric field through the silk screen printing aluminium paste, processes back electrode through silk screen printing silver slurry, and in sintering furnace with 900 ℃ temperature sintering, process semi-finished product four times;
E) evenly apply mixed liquor that one deck include phosphoric acid, alcohol, water and acetone with the one side of said silicon nitride film through spin coating or spraying method at said four semi-finished product, wherein the mass ratio of phosphoric acid is 45%; Adopting wavelength then is that the green light pulse laser of 550nm, power 10W scans on said silicon nitride film by the figure of technological requirement; Form width 15 μ m; The thin grid fluting of spacing 1.0mm; And in this side of formation, thin grid fluting place resistance is the heavy doping emitter of 50ohm/sq, process semi-finished product five times;
F) said five semi-finished product are put into included HF, NH 3H 2O, PbCl 2Mixed solution in; These five semi-finished product were carried out activation 40 seconds with the one side of said silicon nitride film; Then five semi-finished product after the activation being deposited the thick nickel dam of 0.8 μ m through chemically coated nickel method on said heavy doping emitter, is 400 ℃ and gassy N in temperature 2Sintering furnace in sintering 10 minutes, process semi-finished product six times;
G) on the nickel dam of said six half-finished said heavy doping emitters, deposit the thick copper layer of 40 μ m, then battery is applied the electric field of a 0.32A, in electric field, on this copper layer, deposit the thick silver layer of 5 μ m, process battery sheet finished product.

Claims (10)

1. method for manufacturing solar battery efficiently is characterized in that: may further comprise the steps:
A) silicon chip of treating production carries out making herbs into wool, diffusion, etching successively and goes PSG technology, processes semi-finished product one time;
B) placing the alkali lye of heating to carry out polished backside said once half-finished silicon chip handles, processes the secondary semi-finished product;
C) said secondary semi-finished product are carried out pecvd process, process three semi-finished product of one side with silicon nitride film;
The one side of d) not attaching said silicon nitride film at said three semi-finished product is printed back of the body electric field and back electrode through silk-screen printing technique, and sintering, processes semi-finished product four times;
E) evenly apply one deck phosphorus liquid at said four semi-finished product with the one side of said silicon nitride film; Adopt laser on said silicon nitride film, to scan by the figure of technological requirement; Form thin grid fluting, and form the heavy doping emitter, process semi-finished product five times at this thin grid fluting place;
F) said five semi-finished product are put into included HF, NH 3H 2O, PbCl 2Mixed solution in; These five semi-finished product are carried out activation with the one side of said silicon nitride film; Then five semi-finished product after the activation are deposited the thick nickel dam of 0.2 ~ 0.8 μ m through chemically coated nickel method on said heavy doping emitter, sintering after accomplishing is processed semi-finished product six times;
G) on the nickel dam of said six half-finished said heavy doping emitters, deposit the thick copper layer of 20 ~ 40 μ m, on this copper layer, deposit the thick silver layer of 1 ~ 5 μ m then, process battery sheet finished product.
2. according to the said method for manufacturing solar battery of claim 1, it is characterized in that: in step a, in the diffusion process, earlier said silicon chip is heated to 810 ~ 830 ℃, adopts POCl 3Spread as diffuse source.
3. according to the said method for manufacturing solar battery of claim 2, it is characterized in that: in diffusion technology, be 15 ~ 30 minutes the perdurabgility of diffusion.
4. according to the said method for manufacturing solar battery of claim 1, it is characterized in that: in step b, said alkali lye is the NaOH solution of mass ratio 1 ~ 5%, and the temperature of said heating is 75 ~ 85 ℃, and be 1 ~ 5 minute the perdurabgility of said polishing.
5. according to the said method for manufacturing solar battery of claim 1, it is characterized in that: in step c, said pecvd process employing flow-rate ratio is 0.09 ~ 0.15 SiH 4And NH 3The silicon nitride film that to deposit two-layer at least gross thickness be 85 ~ 95nm; Temperature in the said pecvd process process is 430 ~ 470 ℃, and the duration is 10 ~ 15 minutes.
6. according to the said method for manufacturing solar battery of claim 1, it is characterized in that: in steps d, said back of the body electric field is processed through the silk screen printing aluminium paste, and said back electrode is processed through silk screen printing silver slurry.
7. according to the said method for manufacturing solar battery of claim 1, it is characterized in that: in step e, said phosphorus liquid is the mixed liquor that includes phosphoric acid, alcohol, water and acetone, and wherein, the mass ratio of phosphoric acid is 30 ~ 45%; Said spin coating or the spraying method of being applied to.
8. according to the said method for manufacturing solar battery of claim 7, it is characterized in that: said laser is that wavelength is the green light pulse laser of 500 ~ 550nm, laser power 2 ~ 10W.
9. according to the said method for manufacturing solar battery of claim 1, it is characterized in that: in step f, said soak time is 25 ~ 40 seconds.
10. according to the said method for manufacturing solar battery of claim 1, it is characterized in that: in step a, in the diffusion process, earlier said silicon chip is heated to 810 ~ 830 ℃, adopts POCl 3Spread as diffuse source; In diffusion technology, be 15 ~ 30 minutes the perdurabgility of diffusion; In step b, said alkali lye is the NaOH solution of mass ratio 1 ~ 5%, and the temperature of said heating is 75 ~ 85 ℃, and be 1 ~ 5 minute the perdurabgility of said polishing; In step c, said pecvd process employing flow-rate ratio is 0.09 ~ 0.15 SiH 4And NH 3The silicon nitride film that to deposit two-layer at least gross thickness be 85 ~ 95nm; Temperature in the said pecvd process process is 430 ~ 470 ℃, and the duration is 10 ~ 15 minutes; In steps d, said back of the body electric field is processed through the silk screen printing aluminium paste, and said back electrode is processed through silk screen printing silver slurry; In step e, said phosphorus liquid is the mixed liquor that includes phosphoric acid, alcohol, water and acetone, and wherein, the mass ratio of phosphoric acid is 30 ~ 45%; Said spin coating or the spraying method of being applied to; Said laser is that wavelength is the green light pulse laser of 500 ~ 550nm, laser power 5 ~ 6W; In step f, said soak time is 25 ~ 40 seconds; In step g, in the process of deposition silver layer, to accomplishing six semi-finished product behind deposited copper electric field that to apply an electric current be 0.05 ~ 0.5A.
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CN109449248A (en) * 2018-09-17 2019-03-08 浙江爱旭太阳能科技有限公司 A kind of preparation method of high efficiency SE-PERC solar battery
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CN103078002A (en) * 2012-12-28 2013-05-01 苏州阿特斯阳光电力科技有限公司 Manufacturing method for low-surface concentration shallow diffused junction solar battery
CN103078002B (en) * 2012-12-28 2016-01-27 苏州阿特斯阳光电力科技有限公司 A kind of preparation method of low surface concentration shallow diffused junction solar cell
CN103199158A (en) * 2013-04-24 2013-07-10 海南英利新能源有限公司 Photovoltaic solar battery piece and etching method of photovoltaic solar battery piece
CN103199158B (en) * 2013-04-24 2016-08-24 海南英利新能源有限公司 Photovoltaic solar cell sheet and lithographic method thereof
CN103258867A (en) * 2013-04-28 2013-08-21 宁波日地太阳能电力有限公司 Front electrode of silicon solar cell and preparation method thereof
CN103258867B (en) * 2013-04-28 2016-04-13 宁波日地太阳能电力有限公司 Front electrode of a kind of silicon solar cell and preparation method thereof
CN103390694A (en) * 2013-08-09 2013-11-13 泰州德通电气有限公司 Technology capable of improving tension of main grid of photoinductive electroplating battery
CN109449248A (en) * 2018-09-17 2019-03-08 浙江爱旭太阳能科技有限公司 A kind of preparation method of high efficiency SE-PERC solar battery
CN114420795A (en) * 2022-02-11 2022-04-29 安徽华晟新能源科技有限公司 Preparation method of electrode and preparation method of solar cell
CN114420796A (en) * 2022-02-11 2022-04-29 安徽华晟新能源科技有限公司 Preparation method of electrode and preparation method of solar cell

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