CN110957378A - Back film for improving double-sided rate of P-type double-sided battery and preparation method thereof - Google Patents
Back film for improving double-sided rate of P-type double-sided battery and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 93
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 93
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 30
- 239000012528 membrane Substances 0.000 claims abstract description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims description 60
- 230000008021 deposition Effects 0.000 claims description 51
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 10
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 10
- 239000001272 nitrous oxide Substances 0.000 claims description 6
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims 2
- 230000002708 enhancing effect Effects 0.000 claims 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 11
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 11
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 11
- 230000008569 process Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a back membrane structure for improving the double-sided rate of a P-type double-sided battery, which comprises a battery piece, wherein an aluminum oxide membrane, a silicon nitride membrane, a silicon oxynitride membrane and a silicon oxide membrane are sequentially deposited on the back surface of the battery piece, the silicon nitride membrane comprises an upper silicon nitride membrane, a middle silicon nitride membrane and a lower silicon nitride membrane, the thicknesses of the upper silicon nitride membrane, the middle silicon nitride membrane and the lower silicon nitride membrane are gradually increased, the refractive index is gradually reduced, the total thickness of the silicon nitride membranes is 35-55 nanometers, and the total refractive index of the silicon nitride membranes is 2.12-2.20.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a back film for improving the double-sided rate of a P-type double-sided cell and a preparation method thereof.
Background
At present, as environmental problems and energy problems are more and more concerned, the research, development and utilization of solar cells as clean energy have entered a new stage. In order to reduce the cost of crystalline silicon and adapt to the competitive photovoltaic industry, the thickness of a crystalline silicon cell is thinner and thinner, because the crystalline silicon is a gap band material, the light absorption coefficient is small, and the loss caused by transmitted light is increased along with the reduction of the thickness of a silicon wafer, so that today when the crystalline silicon is thinner and thinner, the efficient cell technology based on the thinner crystalline silicon is the research focus of various enterprises and institutions in universities. At present, main research hotspots include HIT batteries, WMT batteries, N-type double-sided batteries, P-type SE PERC batteries, and the like, wherein the P-type SE PERC batteries have become the mainstream battery technology in the market due to relatively mature technology and low mass production difficulty.
The front surface and the back surface of the double-sided SE PERC solar cell can receive light and generate power, 10% -30% of sunlight can be collected by the back surface, the power generation amount of each W component can be increased by 20%, and the power cost per W degree can be reduced by 7% -10%. The double-sided PERC technology has higher compatibility with the existing PERC production line, is suitable for large-scale mass production, and is a hot technology for cost reduction and efficiency improvement in the later PERC era.
Therefore, the improvement of the back film structure and the optimization of the film coating process reduce the reflectivity of the back of the cell, increase the light absorption, improve the back conversion efficiency of the P-type double-sided SE PERC cell and improve the double-sided rate of the P-type double-sided SE PERC cell, and are the key points of attention in the industry at present.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the problem of low reflectivity of the back surface of the battery piece in the prior art.
The technical scheme adopted by the invention for solving the technical problem is as follows:
the utility model provides a promote two-sided rate's of two-sided battery of P type notacoria structure, includes the battery piece, the back of battery piece deposits alumina membrane, silicon nitride film, silicon oxynitride film, silicon oxide film in proper order, its characterized in that:
the silicon nitride films comprise an upper silicon nitride film, a middle silicon nitride film and a lower silicon nitride film, the thickness of the upper silicon nitride film is smaller than that of the middle silicon nitride film, the thickness of the middle silicon nitride film is smaller than that of the lower silicon nitride film, the refractive index of the upper silicon nitride film is larger than that of the middle silicon nitride film, the refractive index of the middle silicon nitride film is larger than that of the lower silicon nitride film, the total thickness of the upper silicon nitride film, the middle silicon nitride film and the lower silicon nitride film is 35-55 nanometers, and the total refractive index is 2.12-2.20;
the thickness of the silicon oxynitride film is 8-18 nanometers, and the refractive index is 1.6-2.0;
the silicon oxide film has a thickness of 11 to 21 nm and a refractive index of 1.4 to 1.6.
Preferably, the aluminum oxide film has a thickness of 8 to 12 nm and a refractive index of 1.55 to 1.65.
Preferably, the total thickness of the aluminum oxide film, the silicon nitride film, the silicon oxynitride film, and the silicon oxide film is 62 to 106 nm, the refractive index is 1.75 to 2.15, and the color of the film is light blue.
A preparation method of a back film for improving the double-sided rate of a P-type double-sided battery is characterized by comprising the following steps: comprises the following steps;
step one, pretreatment of a battery piece: putting a battery piece into a graphite boat, and feeding the battery piece into a deposition furnace tube, and firstly preparing the aluminum oxide film on the back surface of the battery piece;
step two, preparing a silicon nitride film on the back: depositing the silicon nitride film in a deposition furnace tube, wherein the deposition temperature of the silicon nitride film is 400-500 ℃, the radio frequency power is 10-15 kilowatts, the duty ratio is 1: 10-1: 15, and the furnace tube pressure is 1400-1800 mTorr; the flow ratio of deposition gas silicon hydride to ammonia gas of the upper silicon nitride film (31) is 0.3:1 to 0.25:1, and the deposition time of the upper silicon nitride film is 60 to 100 seconds; the flow ratio of deposition gas silicon tetrahydride to ammonia gas of the middle layer silicon nitride film is 0.20:1 to 0.15:1, and the deposition time of the middle layer silicon nitride film is 70 to 110 seconds; the flow ratio of deposition gas silicon tetrahydride to ammonia gas of the lower silicon nitride film is 0.15:1 to 0.10:1, and the deposition time of the lower silicon nitride film is 80 to 120 seconds;
step three, preparing a silicon oxynitride film on the back: depositing the silicon oxynitride film in a deposition furnace tube, wherein the deposition temperature of the silicon oxynitride film is 400-500 ℃, the radio frequency power is 7-10 kilowatts, the duty ratio is 1: 12-1: 15, the furnace tube pressure is 1000-1400 mTorr, the flow ratio of deposition gas silicon hydride, ammonia gas and nitrous oxide of the silicon oxynitride film is 0.6:1: 1-0.4: 1:1, and the deposition time of the silicon oxynitride film is 70-90 seconds;
step four, preparing a silicon oxide film on the back: and depositing the silicon oxide film in a deposition furnace tube, wherein the deposition temperature of the silicon oxide film is 400-500 ℃, the radio frequency power is 7-10 kilowatts, the duty ratio is 1: 12-1: 15, the furnace tube pressure is 1000-1400 millitorr, the flow ratio of silicon hydride and nitrous oxide in the deposition gas of the silicon oxide film is 0.10: 1-0.08: 1, and the deposition time of the silicon oxide film is 90-110 seconds.
The invention has the beneficial effects that:
according to the preparation method of the back silicon nitride film, the silicon oxynitride film and the silicon oxide film composite film, the silicon nitride film, the silicon oxynitride film and the silicon oxide film composite film structure formed by the preparation method is designed in a matching manner according to the film thickness and the refractive index of each dielectric film, so that the absorption of back sunlight can be well increased, the current of the battery is finally improved, the back conversion efficiency is finally improved, meanwhile, the silicon oxynitride film and the silicon oxide film layer added on the back well block water vapor and metal ions from entering the battery piece to cause efficiency attenuation, and the quality of the product is improved.
According to the invention, the back conversion efficiency of the P-type double-sided SE PERC battery is improved by improving the back film layer structure and optimizing the film coating process, the double-sided rate of the P-type double-sided SE PERC battery is improved from 72.9% to 74.1%, meanwhile, the quality of the battery piece is improved, the benefit and the competitiveness of an enterprise are improved, and the method is very worthy of industrial application.
Drawings
FIG. 1 is a schematic view of a back film structure of a battery cell of the present invention
FIG. 2 is a schematic flow chart of the preparation method of the present invention
In the figure: 1. the solar cell comprises a cell piece, 2. an aluminum oxide film, 3. a silicon nitride film, 31. an upper silicon nitride film, 32. a middle silicon nitride film, 33. a lower silicon nitride film, 4. a silicon oxynitride film and 5. a silicon oxide film.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, and the terms used herein in the specification of the present invention are for the purpose of describing particular embodiments only and are not intended to limit the present invention.
As shown in fig. 2, a method for preparing a back film for improving the double-sided rate of a P-type double-sided battery comprises the following steps;
step one, pretreatment of a battery piece: putting the cell 1 into a graphite boat, and sending the cell into a deposition furnace tube, firstly preparing an aluminum oxide film 2 on the back surface of the cell 1, wherein the deposition temperature is 300 ℃, the thickness of the aluminum oxide film 2 is 10 nanometers, and the refractive index is 1.6;
step two, preparing a silicon nitride film on the back: depositing the silicon nitride film 3 in a deposition furnace tube, wherein the deposition temperature of the silicon nitride film 3 is 430 ℃, the radio frequency power is 14 kilowatts, the duty ratio is 1:14, and the furnace tube pressure is 1500 millitorr; the flow rate of the deposition gas silicon hydride of the upper silicon nitride film 31 is 1000 standard milliliters per minute, the flow rate of ammonia gas is 3500 standard milliliters per minute, and the deposition time of the upper silicon nitride film 31 is 80 seconds; the flow rate of the deposition gas silicon hydride of the middle silicon nitride film 32 is 970 standard milliliters per minute, the flow rate of ammonia gas is 5500 standard milliliters per minute, and the deposition time of the middle silicon nitride film 32 is 90 seconds; the deposition gas for the lower silicon nitride film 33 was set to a flow rate of 870 standard milliliters per minute, the flow rate of ammonia gas was 6800 standard milliliters per minute, and the deposition time for the lower silicon nitride film 33 was 100 seconds; the thickness of the three silicon nitride films is increased in sequence, the refractive index is reduced in sequence, the total thickness of the three silicon nitride films is 47 nanometers, and the refractive index is 2.17.
Step three, preparing a silicon oxynitride film on the back: depositing the silicon oxynitride film 4 in a deposition furnace tube, wherein the deposition temperature of the silicon oxynitride film 4 is 440 ℃, the radio frequency power is 9 kilowatts, the duty ratio is 1:14, the pressure of the furnace tube is 1200 mTorr, the flow rate of deposited gas silicon hydride of the silicon oxynitride film 4 is 500 standard milliliters per minute, the flow rate of ammonia gas is 2500 standard milliliters per minute, the flow rate of nitrous oxide is 2500 standard milliliters per minute, the deposition time of the silicon oxynitride film 4 is 80 seconds, the thickness of the silicon oxynitride film 4 is 14 nanometers, and the refractive index is 1.9;
step four, preparing a silicon oxide film on the back: and depositing the silicon oxide film 5 in a deposition furnace tube, wherein the deposition temperature of the silicon oxide film 5 is 440 ℃, the radio frequency power is 8 kilowatts, the duty ratio is 1:15, the pressure of the furnace tube is 1200 millitorr, the flow rate of deposition gas silicon hydride of the silicon oxide film 5 is 450 standard milliliters per minute, the flow rate of nitrous oxide is 5500 standard milliliters per minute, the deposition time of the silicon oxide film 5 is 100 seconds, the thickness of the silicon oxide film 5 is 16 nanometers, and the refractive index is 1.5.
In this example, the total thickness of the three silicon nitride films, the silicon oxynitride film and the silicon oxide film is 82 nm, and the refractive index is 1.95. During the preparation of the upper, middle and lower silicon nitride films, the flow of the silicon hydride gas is gradually reduced, the flow of the ammonia gas is gradually increased, the refractive indexes of the obtained upper, middle and lower silicon nitride films are also gradually reduced, the refractive index of the composite film layer is gradually reduced from the silicon nitride film to the silicon oxynitride film, namely the refractive index of the second silicon nitride film is smaller than that of the upper silicon nitride film, the refractive index of the lower silicon nitride film is smaller than that of the middle silicon nitride film, the refractive index of the silicon oxynitride film is smaller than that of the lower silicon nitride film, and the refractive index of the silicon oxide film is smaller than that of the silicon oxynitride film.
The back film structure for improving the double-sided rate of the P-type double-sided battery obtained by the method comprises a battery piece 1, wherein an aluminum oxide film 2, a silicon nitride film 3, a silicon oxynitride film 4 and a silicon oxide film 5 are sequentially deposited on the back surface of the battery piece 1, and the silicon nitride film 3 comprises an upper silicon nitride film 31, a middle silicon nitride film 32 and a lower silicon nitride film 33.
The efficiency of a double-sided test of the P-type double-sided SE PERC cell manufactured in the examples was compared with that of a cell manufactured by a conventional production line process (the back film structure was a laminate film of an aluminum oxide layer and a silicon nitride layer), and the results are shown in the following table:
| name (R) | Uoc（V） | Isc（mA） | FF | Front Eta (%) | Back Eta (%) |
| Production line process | 0.6736 | 9.859 | 80.63 | 21.919% | 15.98% |
| The new process of the invention | 0.6750 | 9.862 | 80.64 | 21.971% | 16.29% |
According to the experimental data, the back photoelectric conversion efficiency of the novel process is increased by 0.31% compared with that of the existing production line process, the double-sided rate of the battery is improved from 72.9% to 74.14%, the double-sided rate of the battery is obviously improved, and the novel process is very worthy of industrial application.
It will be obvious to those skilled in the art that the present invention may be varied in many ways, and that such variations are not to be regarded as a departure from the scope of the invention. All such modifications as would be obvious to one skilled in the art are intended to be included within the scope of this claim.
Claims (4)
1. The utility model provides a promote two-sided rate's of two-sided battery of P type notacoria structure, includes battery piece (1), the back of battery piece deposits in proper order has aluminium oxide membrane (2), silicon nitride film (3), silicon oxynitride film (4), silicon oxide film (5), its characterized in that:
the silicon nitride film (3) comprises an upper silicon nitride film (31), a middle silicon nitride film (32) and a lower silicon nitride film (33), the thickness of the upper silicon nitride film (31) is smaller than that of the middle silicon nitride film (32), the thickness of the middle silicon nitride film (32) is smaller than that of the lower silicon nitride film (33), the refractive index of the upper silicon nitride film (31) is larger than that of the middle silicon nitride film (32), the refractive index of the middle silicon nitride film (32) is larger than that of the lower silicon nitride film (33), the total film thickness of the silicon nitride film (3) is 35-55 nanometers, and the total refractive index of the silicon nitride film (3) is 2.12-2.20;
the thickness of the silicon oxynitride film (4) is 8-18 nanometers, and the refractive index is 1.6-2.0;
the silicon oxide film (5) has a thickness of 11 to 21 nm and a refractive index of 1.4 to 1.6.
2. The backsheet construction for enhancing the double-sided rate of a P-type bi-planar battery as claimed in claim 1, wherein: the thickness of the aluminum oxide film (2) is 8-12 nanometers, and the refractive index is 1.55-1.65.
3. The backsheet construction for enhancing the double-sided rate of a P-type bi-planar battery as claimed in claim 1, wherein: the total thickness of the aluminum oxide film (2), the silicon nitride film (3), the silicon oxynitride film (4) and the silicon oxide film (5) is 62 to 106 nanometers, the refractive index is 1.75 to 2.15, and the color of the film is light blue.
4. A method for preparing the double-sided rate improving back film of the P-type double-sided battery as claimed in any one of claims 1 to 3, wherein the method comprises the following steps: comprises the following steps;
step one, pretreatment of a battery piece: putting the battery piece (1) into a graphite boat, and feeding the graphite boat into a deposition furnace tube, and firstly preparing the aluminum oxide film (2) on the back surface of the battery piece (1);
step two, preparing a silicon nitride film on the back: depositing the silicon nitride film (3) in a deposition furnace tube, wherein the deposition temperature of the silicon nitride film (3) is 400-500 ℃, the radio frequency power is 10-15 kilowatts, the duty ratio is 1: 10-1: 15, and the furnace tube pressure is 1400-1800 mTorr; the flow ratio of deposition gas silicon tetrahydride to ammonia gas of the upper silicon nitride film (31) is 0.3:1 to 0.25:1, and the deposition time of the upper silicon nitride film (31) is 60 to 100 seconds; the flow ratio of deposition gas silicon tetrahydride to ammonia gas of the middle silicon nitride film (32) is 0.20:1 to 0.15:1, and the deposition time of the middle silicon nitride film (32) is 70 to 110 seconds; the flow ratio of the deposition gas silicon hydride to ammonia gas of the lower silicon nitride film (33) is 0.15:1 to 0.10:1, and the deposition time of the lower silicon nitride film (33) is 80 to 120 seconds;
step three, preparing a silicon oxynitride film on the back: depositing the silicon oxynitride film (4) in a deposition furnace tube, wherein the deposition temperature of the silicon oxynitride film (4) is 400-500 ℃, the radio frequency power is 7-10 kilowatts, the duty ratio is 1: 12-1: 15, the furnace tube pressure is 1000-1400 mTorr, the flow ratio of silicon tetrahydride, ammonia gas and nitrous oxide in the deposition gas of the silicon oxynitride film (4) is 0.6:1: 1-0.4: 1:1, and the deposition time of the silicon oxynitride film (4) is 70-90 seconds;
step four, preparing a silicon oxide film on the back: and depositing the silicon oxide film (5) in a deposition furnace tube, wherein the deposition temperature of the silicon oxide film (5) is 400-500 ℃, the radio frequency power is 7-10 kilowatts, the duty ratio is 1: 12-1: 15, the furnace tube pressure is 1000-1400 mTorr, the flow ratio of silicon hydride in the deposition gas of the silicon oxide film (5) to nitrous oxide is 0.10: 1-0.08: 1, and the deposition time of the silicon oxide film (5) is 90-110 seconds.
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