CN209487518U - A kind of backside passivation film for p-type monocrystalline PERC battery - Google Patents
A kind of backside passivation film for p-type monocrystalline PERC battery Download PDFInfo
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Abstract
The utility model belongs to the preparation technical field of monocrystalline PERC battery, and in particular to a kind of backside passivation film for p-type monocrystalline PERC battery.The backside passivation film includes alumina layer, the SiN that PERC cell backside is sequentially depositing from inside to outsidexLayer and SiOXNYLayer.The utility model patent is in original Al2O3/SiNxOn the basis of film plating layer, SiO is increased in outermost layerXNYLayer.Test example test result shows to use original back passivating film Al on p-type monocrystalline PERC battery2O3/SiNx, when with a thickness of 4nm/100nm, battery is 74.1% to the total absorptivity of light；As the backside passivation film Al provided using the utility model embodiment 12O3/SiNx/SiOXNY, battery is 92.8% to the total absorptivity of light；Meanwhile the passivation film can play a protective role, and improve short circuit current, promote battery efficiency.
Description
Technical field
The utility model belongs to monocrystalline PERC battery technology field, and in particular to a kind of for p-type monocrystalline PERC battery
Backside passivation film.
Background technique
Currently, high-efficiency battery technology becomes a main trend.Some researches show that the main efficiency sections of conventional single battery
For 19.8-20%, corresponding component power is 280W, and optical loss accounts for 50% or more of efficiency total losses.In this background,
PERC battery comes into being.PERC technology, i.e. passivation emitter rear-face contact are passivated by being formed in rear surface of solar cell
Layer, can be greatly reduced back surface electricity recombination rate, form good internal optics back reflection mechanism, promote the open circuit electricity of battery
Voc, short circuit current Isc are pressed, to promote the transfer efficiency of battery.
PERC solar battery has simple process, and cost is relatively low, and the advantage high with existing production line for manufacturing battery compatibility
It is a kind of high performance solar batteries newly developed come out, has obtained the extensive concern of industry, is expected to become the following high-efficiency solar
The main flow direction of battery.
The prevailing technology of the p-type monocrystalline PERC cell backside passivation of mass production at present is: first depositing one layer of < with ALD method
The Al of 10nm thickness2O3, the SiN of a layer thickness 70-120nm thickness is then deposited with the method for PECVD againxLayer.But SiNxFilm layer
It is a kind of Coating Materials of high index, refractive index is generally 1.9-2.1.It is a kind of table that silicon nitride, which is used in cell piece front surface,
Existing excellent reflection-reducing material can then cause a part to absorb light but if being used in the cell piece back side due to high index
Loss, to influence the promotion of battery Isc.
Based on the above reasons, in order to improve the transfer efficiency of battery, researcher has carried out various improved trials.Than
As Chinese patent CN106972066A disclose it is a kind of based on ALD technique PERC battery preparation method, this method include 1)
Making herbs into wool；2) it spreads；3) polished backside, etch and go phosphorosilicate glass；4) back side ALD prepares aluminium oxide；5) front PECVD is deposited
SiNx antireflective coating；6) back side PECVD deposits passivating back film layer；7) backside laser local openings；8) silk-screen printing, sintering.
The key point of this method is during step 6) back side PECVD deposition passivating back film layer, first deposits SiONx in silicon chip surface
Redeposition SiNx film after film promotes the transfer efficiency of battery by improving single crystal thin film configuration of surface and around plating color difference.But it presses
The transformation efficiency promotion of battery made from above-mentioned technique is limited, and battery high-temperature still can not be overcome to be sintered (700 degree or more)
The problem of battery efficiency reduces afterwards.
Utility model content
In order to solve the above problem in the prior art, the purpose of utility model of the application is to provide a kind of for p-type
The passivating back film layer of monocrystalline PERC battery, the passivation film can be improved cell piece passivating back, increase internal reflection effect, into
And improve the transformation efficiency of battery.
In order to realize above-mentioned purpose of utility model, one of technical solution of the utility model is: one kind being used for p-type
The backside passivation film of monocrystalline PERC battery comprising alumina layer that PERC cell backside is sequentially depositing from inside to outside, SiNxLayer
And SiOXNYLayer.
Preferably, the thickness < 10nm of the alumina layer.
Preferably, the SiNxLayer with a thickness of 40-75nm；Refractive index is 1.9-2.4.
Preferably, the SiOXNYLayer with a thickness of 50-150nm；Refractive index is 1.4-1.9.
It is further preferred that the SiOXNYLayer with a thickness of 85-130nm.
Preferably, the SiOXNYX in layer, value range is Y respectively: x=1-2；Y=2-4.
Another technical solution of the utility model is a kind of plated film of backside passivation film for p-type monocrystalline PERC battery
Technique comprising following steps:
One layer of Al is plated at the monocrystalline P-type wafer back side using ALD deposition method first2O3Then film is existed with the method for PECVD again
Silicon chip back side Al2O3SiN is deposited above filmxLayer and SiOXNYLayer.
Preferably, the deposition SiNxLayer and SiOXNYLayer includes the following steps:
1) 50-300s is deposited under the conditions of 400-500 DEG C by silane and ammonia,
2) 100-400s is deposited under the conditions of 400-500 DEG C by silane and ammonia,
3) 50-300s is deposited under the conditions of 400-500 DEG C by silane, ammonia and laughing gas.
It is further preferred that the volume ratio of silane and ammonia is 1:(2-8 in step 1)).
It is further preferred that the volume ratio of silane and ammonia is 1:(5-12 in step 2)).
It is further preferred that the volume ratio of silane in step 3), ammonia, laughing gas is 1:(1-5): (7-15).
One of technical solution of the utility model provides a kind of monocrystalline PERC electricity containing above-mentioned backside passivation film
The preparation process in pond includes the following steps:
Making herbs into wool, diffusion, etching, positive thermal oxide, back side ALD prepare alumina layer, back side PEVCD deposition SiNxLayer and
SiOXNYLayer, front PEVCD deposit SiNxLayer, laser slotting, silk-screen printing.
Preferably, the method for the positive thermal oxide is dry-oxygen oxidation, wet-oxygen oxidation or TCA oxidation.
Compared with prior art, the utility model has the beneficial effects that:
(1) the utility model patent is in original Al2O3/SiNxOn the basis of film plating layer, SiO is increased in outermost layerXNYLayer.
Its major advantage is: SiOXNYRelative to SiNx, it is a kind of compared with low-index material, it, can using in p-type PERC cell backside
To increase light absorbing internal reflection in cell matrix, with SiNxThe lamination of formation can increase the number for absorbing light internal reflection, into
One step improves crystal silicon battery Isc.Test example test result shows to use original back passivating film on p-type monocrystalline PERC battery
Al2O3/SiNx, when with a thickness of 4nm/100nm, battery is 74.1% to the total absorptivity of light；Implement when using the utility model
The backside passivation film Al that example 1 provides2O3/SiNx/SiOXNY, battery is 92.8% to the total absorptivity of light.
(2) passivation film provided by the utility model can also play protection warranty to battery, when 700 DEG C of sintering temperature >
When, in conventional passivation film in battery made from technique, vitreum in aluminium paste can corroding silicon nitride layer, battery efficiency is bright after sintering
It is aobvious to reduce, and the passivation film of the utility model is used, due to the SiO of outer layerXNYLayer can slacken above-mentioned corrosiveness, thus
Antireflective and the passivation effect that ensure that silicon nitride layer, effectively prevent the reduction of short circuit current and battery efficiency, ensure that
The efficiency of battery after high temperature sintering.
(3) method provided by the utility model in p-type PERC cell backside plated film is simple, controllable, utilizes existing life
Production condition, without additionally increasing new equipment；And it is easy to yieldization large-scale production.
Detailed description of the invention
Fig. 1 is the external quantum efficiency test chart of cell piece made from the coating process that is provided using embodiment 1；
Fig. 2 is the structural schematic diagram for the backside passivation film for p-type monocrystalline PERC battery that embodiment 1 provides；
Wherein, 1 is Al2O3Layer, 2 be SiNxLayer, 3 be SiOXNYLayer.
Specific embodiment
To keep the purpose and technical solution of the utility model embodiment clearer, implement below in conjunction with the utility model
Example, is clearly and completely described the technical solution of the utility model.
Embodiment 1
As shown in Fig. 2, a kind of backside passivation film for p-type monocrystalline PERC battery comprising PERC cell backside is by interior
The Al being sequentially depositing outward2O3Layer, SiNxLayer and SiOXNYLayer；
Wherein, Al2O3Layer is with a thickness of 4nm；SiNxLayer is with a thickness of 55nm, refractive index 2.4；SiOXNYLayer with a thickness of 98nm,
Refractive index is 1.7, wherein SiOXNYIn X be 2, Y 2.
The coating process of the backside passivation film of the p-type monocrystalline PERC battery comprising following steps:
The Al of one layer of 4nm thickness is plated at the monocrystalline P-type wafer back side using ALD deposition method first2O3Film, then again with PECVD's
Method is in silicon chip back side Al2O3SiN is deposited above filmxLayer and SiOXNYLayer,
Wherein, PEVCD method in the back side deposits SiNxLayer and SiOXNYLayer includes the following steps:
1) 170s is deposited under the conditions of 490 DEG C by silane 1000mL and ammonia 4400mL,
2) 275s is deposited under the conditions of 490 DEG C by silane 800mL and ammonia 6200mL,
3) 150s is deposited under the conditions of 490 DEG C by silane 600mL, ammonia 2000mL and laughing gas 5000mL.
It include that the preparation process of the monocrystalline PERC battery of the backside passivation film of the passivation film includes the following steps: to make
Suede, diffusion, etching, positive thermal oxide, back side ALD prepare alumina layer, back side PEVCD deposition SiNxLayer and SiOXNYLayer, front
PEVCD deposits SiNxLayer, laser slotting, silk-screen printing obtain p-type monocrystalline PERC battery.
Show that battery made from the passivating film in the present embodiment is to sunlight by the simulation of PV Lighthouse software
Total absorptivity is 92.8%.
In the case where other conditions are constant, conventional passivation film layer Al2O3/SiNxWhen with a thickness of 4nm/100nm, battery
To the total absorptivity highest of sunlight, only 74.1%.
Using quantum outside the solar battery designed according to latest edition inspection criterion IEC-60904-8 and NREL process of measurement
Efficiency tester carries out external quantum efficiency test (EQE) to battery made from the present embodiment, and testing result is as shown in Figure 1；Wherein,
The test index of instrument are as follows: spectral region: 300-1100nm；System irradiation area: 1mmx1mm；Monochromatic light light intensity: at 530nm
2mW/cm2；Data redundancy :≤1%.
Quantum efficiency of solar battery, to be referred to as solar cell photoelectric transfer efficiency IPCE (Iccident-
Photon-to-electron Conversion Eficiency).Usually two kinds of referred quantum efficiency of solar battery are
Refer to external quantum efficiency (External Quantum Efficiency, EQE) and internal quantum efficiency (Internal Quantum
Efficiency,IQE。
External quantum efficiency (EQE) refers to that the electric charge carrier number of solar battery and outside are incident on solar battery table
The ratio between a certain number of photon numbers in face.
Battery made from the backside passivation film provided by the present embodiment 1 it can be seen from Fig. 1 result is relative to traditional back side
Plated film (1 in Fig. 1), it is higher in the quantum efficiency of medium-long wave band (500-1100nm), illustrate the passivating back in the utility model
Film (2 in Fig. 1) is more advantageous to increase to light absorbing internal reflection, to improve the short circuit current Isc of battery.
Embodiment 2
A kind of backside passivation film for p-type monocrystalline PERC battery, including PERC cell backside successively sink from inside to outside
Long-pending Al2O3Layer, SiNxLayer and SiOXNYLayer；
Wherein, Al2O3Layer is with a thickness of 4nm；SiNxLayer is with a thickness of 55nm, refractive index 2.4；SiOXNYLayer with a thickness of 130nm,
Refractive index is 1.5, wherein SiOXNYIn X be 1, Y 2.
The coating process of the backside passivation film of the p-type monocrystalline PERC battery comprising following steps:
The Al of one layer of 4nm thickness is plated at the monocrystalline P-type wafer back side using ALD deposition method first2O3Film, then again
With the method for PECVD in silicon chip back side Al2O3SiN is deposited above filmxLayer and SiOXNYLayer,
Wherein, PEVCD method in the back side deposits SiNxLayer and SiOXNYLayer includes the following steps:
1) 170s is deposited under the conditions of 490 DEG C by silane 1000mL and ammonia 4400mL,
2) 275s is deposited under the conditions of 490 DEG C by silane 800mL and ammonia 6200mL,
3) 150s is deposited under the conditions of 490 DEG C by silane 600mL, ammonia 600mL and laughing gas 4000mL.
Using the battery preparation method and software simulator test method of same embodiment 1, the passivating film in the present embodiment is made
Battery be 91.5% to the total absorptivity of sunlight.
Embodiment 3
A kind of backside passivation film for p-type monocrystalline PERC battery, including PERC cell backside successively sink from inside to outside
Long-pending Al2O3Layer, SiNxLayer and SiOXNYLayer；
Wherein, Al2O3Layer is with a thickness of 4nm；SiNxLayer is with a thickness of 90nm, refractive index 2.0；SiOXNyLayer with a thickness of 98nm,
Refractive index is 1.7, wherein SiOXNYIn X be 2, Y 2.
The coating process of the backside passivation film of the p-type monocrystalline PERC battery comprising following steps:
The Al of one layer of 4nm thickness is plated at the monocrystalline P-type wafer back side using ALD deposition method first2O3Film, then again with PECVD's
Method is in silicon chip back side Al2O3SiN is deposited above filmxLayer and SiOXNYLayer,
Wherein, PEVCD method in the back side deposits SiNxLayer and SiOXNYLayer includes the following steps:
1) 170s is deposited under the conditions of 490 DEG C by silane 700mL and ammonia 6000mL,
2) 275s is deposited under the conditions of 490 DEG C by silane 1000mL and ammonia 4000mL,
3) 150s is deposited under the conditions of 490 DEG C by silane 600mL, ammonia 500mL and laughing gas 3000mL.
Using the battery preparation method and software simulator test method of same embodiment 1, the passivating film in the present embodiment is made
Battery be 87% to the total absorptivity of sunlight.
Embodiment 4
A kind of backside passivation film for p-type monocrystalline PERC battery, including PERC cell backside successively sink from inside to outside
Long-pending Al2O3Layer, SiNxLayer and SiOXNYLayer；
Wherein, Al2O3Layer is with a thickness of 4nm；SiNxLayer is with a thickness of 90nm, refractive index 2.0；SiOXNYLayer with a thickness of 55nm,
Refractive index is 1.9, wherein SiOXNYIn X be 1, Y 2.
The coating process of the backside passivation film of the p-type monocrystalline PERC battery comprising following steps:
The Al of one layer of 4nm thickness is plated at the monocrystalline P-type wafer back side using ALD deposition method first2O3Film, then again with PECVD's
Method is in silicon chip back side Al2O3SiN is deposited above filmxLayer and SiOXNYLayer,
Wherein, PEVCD method in the back side deposits SiNxLayer and SiOXNYLayer includes the following steps:
1) 170s is deposited under the conditions of 490 DEG C by silane 1000mL and ammonia 4400mL,
2) 275s is deposited under the conditions of 490 DEG C by silane 800mL and ammonia 6200mL,
3) 150s is deposited under the conditions of 490 DEG C by silane 600mL, ammonia 4000mL and laughing gas 1500mL.
Using the battery preparation method and software simulator test method of same embodiment 1, the passivating film in the present embodiment is made
Battery be 86.8% to the total absorptivity of sunlight.
Embodiment 5
A kind of backside passivation film for p-type monocrystalline PERC battery, including PERC cell backside successively sink from inside to outside
Long-pending Al2O3Layer, SiNxLayer and SiOXNYLayer；
Wherein, Al2O3Layer is with a thickness of 4nm；SiNxLayer is with a thickness of 55nm, refractive index 2.4；SiOXNYLayer with a thickness of 98nm,
Refractive index is 1.7, wherein SiOXNYIn X be 2, Y 4.
The coating process of the backside passivation film of the p-type monocrystalline PERC battery comprising following steps:
The Al of one layer of 4nm thickness is plated at the monocrystalline P-type wafer back side using ALD deposition method first2O3Film, then again with PECVD's
Method is in silicon chip back side Al2O3SiN is deposited above filmxLayer and SiOxNYLayer,
Wherein, PEVCD method in the back side deposits SiNxLayer and SiOXNYLayer includes the following steps:
1) 170s is deposited under the conditions of 490 DEG C by silane 1000mL and ammonia 4400mL,
2) 275s is deposited under the conditions of 490 DEG C by silane 800mL and ammonia 6200mL,
3) 150s is deposited under the conditions of 490 DEG C by silane 600mL, ammonia 1000mL and laughing gas 3000mL.
Using the battery preparation method and software simulator test method of same embodiment 1, the passivating film in the present embodiment is made
Battery be 89.2% to the total absorptivity of sunlight.
Comparative example 1
A kind of backside passivation film for p-type monocrystalline PERC battery, including PERC cell backside successively sink from inside to outside
Long-pending Al2O3Layer, SiOXNYLayer and SiNxLayer；
Under the conditions of 490 DEG C, first by silane, ammonia and laughing gas deposit SiONx layer, after by silane and ammonia deposition SiNx
Layer, wherein SiONx layers of deposition thickness is 60nm, refractive index 1.8, SiNxThe deposition thickness of layer is 100nm, and refractive index is
2.0；Wherein, SiOXNYIn X be 2, Y 2.
Specific depositing operation are as follows:
1) 150s is deposited under the conditions of 490 DEG C by silane 600mL, ammonia 2000mL and laughing gas 4000mL；
2) 170s is deposited under the conditions of 490 DEG C by silane 1000mL and ammonia 4400mL,
3) 275s is deposited under the conditions of 490 DEG C by silane 800mL and ammonia 3000mL.
Using the battery preparation method and software simulator test method of same embodiment 1, the passivating film in the comparative example is made
Battery be 81.3% to the total absorptivity of sunlight.
Influence into further research backside passivation film provided by the utility model to battery performance, by 30 specification phases
Monocrystalline P-type wafer (being divided into 6 groups, every group 5) with (such as specification is 180 μ m-thicks, 156.75mm × 156.75mm) uses battery
Preparation process prepare alumina layer through making herbs into wool, diffusion, etching, positive thermal oxide, back side ALD, back side PEVCD deposits SiNxLayer
And SiOXNYLayer, front PEVCD deposit SiNxIt is sintered after layer, laser slotting, silk-screen printing in 850 DEG C, realizes metallization；
Wherein back side PEVCD deposits SiNxLayer and SiOXNYLayer is by passivation film structure and plated film disclosed in embodiment 1-5 and comparative example 1
Technique carries out.
The short circuit current and battery efficiency of battery, each group are averaged after test is sintered respectively, statistical result such as the following table 1 institute
Show.Wherein Isc/A is short circuit current；Ncell is cell conversion efficiency.
The short circuit current and cell conversion efficiency test result of battery made from the passivating film provided by the utility model of table 1
| Isc/A | Ncell | |
| Embodiment 1 | 9.873 | 21.86% |
| Embodiment 2 | 9.861 | 21.85% |
| Embodiment 3 | 9.854 | 21.84% |
| Embodiment 4 | 9.850 | 21.83% |
| Embodiment 5 | 9.856 | 21.84% |
| Comparative example 1 | 9.820 | 21.71% |
Battery made from the passivation film provided by the utility model embodiment 1-5 it can be seen from 1 data of table is in high temperature
The short circuit current of battery and cell conversion efficiency are above comparative example after (850 DEG C) sintering, this is because the back of the utility model
SiO in film layerXNYLayer can play a protective role to internal film layer, vitreum when 700 DEG C of sintering temperature >, in aluminium paste
Meeting corroding silicon nitride layer, SiOXNYLayer can slacken this corrosiveness, to ensure that the antireflective and passivation effect of silicon nitride layer
Fruit improves short circuit current, improves battery efficiency.
The above is only the embodiments of the present invention, and the description thereof is more specific and detailed, but can not therefore understand
For a limitation on the scope of the patent of the present invention.It should be pointed out that for those of ordinary skill in the art, not taking off
Under the premise of from the utility model design, various modifications and improvements can be made, these belong to the protection of the utility model
Range.
Claims (2)
1. a kind of backside passivation film for p-type monocrystalline PERC battery, which is characterized in that by PERC cell backside from inside to outside according to
Alumina layer, SiNx layer and the SiO of secondary depositionXNYLayer composition；
The SiNx layer with a thickness of 40-75nm；
The SiOXNYLayer with a thickness of 50-150nm；The SiOXNYX in layer, value range is Y respectively: X=1-2；Y=2-
4。
2. the backside passivation film according to claim 1 for p-type monocrystalline PERC battery, which is characterized in that the SiOXNY
Layer with a thickness of 85-130nm.
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| CN109509796A (en) * | 2018-12-26 | 2019-03-22 | 苏州腾晖光伏技术有限公司 | A kind of backside passivation film and back side coating film technique for p-type monocrystalline PERC battery |
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| CN109509796A (en) * | 2018-12-26 | 2019-03-22 | 苏州腾晖光伏技术有限公司 | A kind of backside passivation film and back side coating film technique for p-type monocrystalline PERC battery |
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