CN105489709B - PERC solar cells and preparation method thereof - Google Patents
PERC solar cells and preparation method thereof Download PDFInfo
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- CN105489709B CN105489709B CN201610038035.3A CN201610038035A CN105489709B CN 105489709 B CN105489709 B CN 105489709B CN 201610038035 A CN201610038035 A CN 201610038035A CN 105489709 B CN105489709 B CN 105489709B
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 74
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 74
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 74
- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 239000010410 layer Substances 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 238000005498 polishing Methods 0.000 claims abstract description 23
- 210000002268 wool Anatomy 0.000 claims abstract description 23
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 20
- 235000008216 herbs Nutrition 0.000 claims abstract description 18
- 230000003647 oxidation Effects 0.000 claims abstract description 18
- 239000002253 acid Substances 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 13
- 239000011241 protective layer Substances 0.000 claims abstract description 13
- 238000005202 decontamination Methods 0.000 claims abstract description 12
- 230000003588 decontaminative effect Effects 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 11
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000002002 slurry Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 238000007639 printing Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 4
- 210000004027 cell Anatomy 0.000 description 52
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 229920005591 polysilicon Polymers 0.000 description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 4
- 241000084978 Rena Species 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention relates to a kind of PERC solar cells and preparation method thereof.The preparation method of above-mentioned PERC solar cells, includes the following steps：Carry out twin polishing, making herbs into wool, diffusion, etching and decontamination glass, permanganic acid oxidation successively to silicon chip；Backside deposition passivation layer and protective layer；Front deposition antireflection layer；Back side local openings, the positive back metal slurry of printing and sintering, obtain PERC solar cells.Compared with the preparation method of traditional PERC solar cells, the preparation method of PERC solar cells of the invention, first carries out twin polishing, easy to follow-up making herbs into wool before silicon wafer wool making；Meanwhile overleaf the silicon chip after decontamination glass is aoxidized before deposit passivation layer and protective layer, play passivation.It is compound that interface can be reduced, improve open-circuit voltage, it is possible to increase product yield.Meanwhile the present invention is based on common process, product yield is high.In addition, above-mentioned PERC solar cells are prepared according to the preparation method of above-mentioned PERC solar cells.
Description
Technical field
The present invention relates to area of solar cell, more particularly to a kind of PERC solar cells and preparation method thereof.
Background technology
Solar cell, also known as photovoltaic cell, are a kind of semiconductor devices that the luminous energy of the sun is converted into electric energy,
Its electricity generating principle is the photovoltaic effect based on semiconductor PN.Since it is green product, environment will not be caused dirty
Dye, and be renewable resource, so in the case of current energy shortage, solar cell is that one kind has broad based growth future
Novel energy.
Localized contact back of the body passivation (PERC) solar cell is a kind of high performance solar batteries newly developed, its transformation efficiency
Current 19% stabilization efficiency is alreadyd exceed with the continuous progress of technology, has obtained the extensive concern of industry.Its core is
Covered in the shady face aluminium oxide or silicon oxide film (5nm~100nm) of silicon chip, to play passivated surface, improve long wave
The effect of response, so as to lift the transfer efficiency of battery.
The preparation method of traditional PERC solar cells mainly includes the following steps：Making herbs into wool, diffusion, polished backside, quarter
Erosion and decontamination glass, backside deposition aluminium oxide or silicon oxide film, backside deposition silicon nitride film, front deposited silicon nitride subtract
Reflecting layer, backside openings, the positive back metal slurry of silk-screen printing, sintering.However, be prepared using above-mentioned preparation method
The product yield of PERC solar cells is relatively low, causes wastage of material, is unfavorable for applying.
The content of the invention
Based on this, it is necessary to the PERC solar-electricities being prepared for the preparation method of traditional PERC solar cells
A kind of relatively low problem of product yield in pond, there is provided preparation method for the PERC solar cells that can improve product yield.
A kind of preparation method of PERC solar cells, includes the following steps：
Carry out twin polishing, making herbs into wool, diffusion, etching and decontamination glass, permanganic acid oxidation successively to silicon chip；
Backside deposition passivation layer and protective layer；
Front deposition antireflection layer；
Back side local openings, the positive back metal slurry of printing and sintering, obtain PERC solar cells.
Compared with the preparation method of traditional PERC solar cells, the preparation method of PERC solar cells of the invention
In, twin polishing is first carried out before silicon wafer wool making, easy to follow-up making herbs into wool；Meanwhile overleaf deposit passivation layer and protective layer
The silicon chip after decontamination glass is aoxidized before, plays passivation.It is compound that interface can be reduced, improve open circuit electricity
Pressure, it is possible to increase product yield.
In one of the embodiments, in the permanganic acid oxidation step, the time of oxidation is 5min~30min, oxidation
Temperature be 50 DEG C~80 DEG C.
In one of the embodiments, in the permanganic acid oxidation step, the volume fraction of permanganic acid is 50%~80%.
In one of the embodiments, in the double-side polishing step, twin polishing, single side are carried out using inorganic alkali solution
It is 5 μm~15 μm to polish Reducing thickness.
In one of the embodiments, in the making herbs into wool step, using plasma etching matte.
In one of the embodiments, in the diffusing step, it is diffused using spin-coating method, diffused sheet resistance 70ohm/
Sq~100ohm/sq.
In one of the embodiments, the passivation layer is alumina layer or silicon oxide layer, and the protective layer is silicon nitride
Film, the antireflection layer are silicon nitride antireflection film.
In one of the embodiments, the thickness of the passivation layer is 5nm~40nm.
In one of the embodiments, the silicon chip is p-type polysilicon.
In addition, also providing a kind of PERC solar cells, the PERC solar cells are according to above-mentioned PERC solar energy
The preparation method of battery is prepared.
Since in above-mentioned preparation method, twin polishing is first carried out before silicon wafer wool making, easy to follow-up making herbs into wool；Meanwhile
Overleaf the silicon chip after decontamination glass is aoxidized before deposit passivation layer and protective layer, plays passivation.
It is compound that interface can be reduced, improve open-circuit voltage.Therefore, it is prepared by the preparation method of above-mentioned PERC solar cells
The product yield of PERC solar cells is high.
Brief description of the drawings
Fig. 1 is the electrical property distribution map for the PERC solar cells that embodiment 1 is prepared respectively with comparative example 1.
Embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.Many details are elaborated in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case of running counter to intension of the present invention, therefore the present invention is from the limitation of following public specific embodiment.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The normally understood implication of technical staff is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein " and/or " include one or more phases
The arbitrary and all combination of the Listed Items of pass.
The preparation method of the PERC solar cells of one embodiment, includes the following steps：
Carry out twin polishing, making herbs into wool, diffusion, etching and decontamination glass, permanganic acid oxidation successively to silicon chip；
Backside deposition passivation layer and protective layer；
Front deposition antireflection layer；
Back side local openings, the positive back metal slurry of printing and sintering, obtain PERC solar cells.
Wherein, silicon chip is preferably p-type polysilicon, i.e. the preparation method of PERC solar cells of the invention is suitable for p-type
The solar cell that polysilicon chip makes.
In double-side polishing step, it is preferred to use inorganic alkali solution carries out twin polishing.For example, using sodium hydroxide solution,
But not limited to this, can also be other inorganic alkali solutions.Single-sided polishing Reducing thickness after polishing is 5 μm~15 μm.To silicon chip
The processing time for carrying out twin polishing is 2min~10min.The present invention first carries out twin polishing to silicon chip, easy to follow-up making herbs into wool.
In making herbs into wool step, using dry etching or wet etching.Dry etching (also referred to as plasma etching) is handle
Silicon chip surface is exposed to the plasma produced in air, and by the window outputed in photoresist with silicon chip thing occurs for plasma
Reason or chemical reaction, so as to remove exposed surfacing.Wet etching is chemically removed using liquid chemical reagent
The material of silicon chip surface.Preferentially plasma etching matte is used in present embodiment.After etching nanometer is formed in silicon chip surface
Level matte, can reduce light reflection.
In diffusing step, it is preferred to use spin-coating method is diffused, and diffused sheet resistance is 70ohm/sq~100ohm/sq.Diffusion
Purpose be to form PN junction.
Etching and decontamination glass, impurity glass are also known as PSG, can be by the way of Rena removes PSG.
In permanganic acid oxidation step, the volume fraction of permanganic acid solution is 50%~80%.The time of oxidation for 5min~
30min, the temperature of oxidation is 50 DEG C~80 DEG C.Therefore, the process of high-temperature oxydation is not required in the present invention, avoids high temperature to PERC
The destruction of solar cell surface, obtained product yield is high, is conducive to apply.To the silicon chip after decontamination glass using high
Mangaic acid is aoxidized, and plays passivation, and it is compound to reduce interface, is improved open-circuit voltage, can also be improved product yield.
The backside deposition passivation layer and protective layer of silicon chip after oxidation afterwards.Wherein, passivation layer is preferably to aoxidize
Aluminium lamination or silicon oxide layer, in a preferred embodiment, the thickness of alumina layer or silicon oxide layer is 5nm~40nm.Protection
Layer is silicon nitride film.
The front that overleaf deposition has the silicon chip of passivation layer and protective layer afterwards deposits antireflection layer.Antireflection layer is preferred
For silicon nitride antireflection film.PECAD deposited silicon nitride antireflection films can be used.
Back side local openings are carried out using laser, using the positive back metal slurry of silk-screen printing and sinter afterwards, you can
To PERC solar cells.
Compared with the preparation method of traditional PERC solar cells, the preparation method of PERC solar cells of the invention
In, twin polishing is first carried out before silicon wafer wool making, easy to follow-up making herbs into wool；Meanwhile overleaf deposit passivation layer and protective layer
The silicon chip after decontamination glass is aoxidized before, plays passivation.It is compound that interface can be reduced, improve open circuit electricity
Pressure, it is possible to increase product yield.
In addition, in the preparation method of the PERC solar cells of the present invention, technological process is simple, can be based on conventional technique
Equipment, and without the process of any required high-temperature oxydation, avoid destruction of the high temperature to PERC solar cell surfaces, obtain
Product yield is high, is conducive to apply.
The present invention also provides a kind of PERC solar cells, are prepared according to the preparation method of above-mentioned PERC solar cells
Form.Since in above-mentioned preparation method, twin polishing is first carried out before silicon wafer wool making, easy to follow-up making herbs into wool；Meanwhile carrying on the back
The silicon chip after decontamination glass is aoxidized before face deposit passivation layer and protective layer, plays passivation.It can drop
Low interface is compound, improves open-circuit voltage.Therefore, the PERC being prepared by the preparation method of above-mentioned PERC solar cells is too
The product yield of positive energy battery is high.
The present invention is further detailed with reference to specific embodiment.
Embodiment 1
Twin polishing is carried out to p-type polysilicon piece in sodium hydroxide solution, handles 5min, the single side after polishing at this time
It is 10 μm to polish Reducing thickness；
Making herbs into wool is carried out to the p-type polysilicon piece after above-mentioned polishing using plasma etching；
The p-type polysilicon piece after above-mentioned making herbs into wool is diffused using spin-coating method, diffused sheet resistance 80ohm/sq；
Rena is carried out to the p-type polysilicon piece after above-mentioned diffusion and removes backplane；
The above-mentioned p-type polysilicon piece gone after backplane is put into the permanganic acid solution that volume fraction is 70%, at 75 DEG C,
Maintain 15min, the p-type polysilicon piece after being aoxidized；
The back side of p-type polysilicon piece after oxidation is sequentially depositing alumina layer, silicon nitride film, in front cvd nitride
Silicon antireflection film, wherein, the thickness of alumina layer is 25nm；
Back side local openings are carried out using laser, using the positive back metal slurry of silk-screen printing and sinter afterwards.
Comparative example 1
Making herbs into wool is carried out to p-type polysilicon piece using plasma etching matte；
The p-type polysilicon piece after above-mentioned making herbs into wool is diffused using spin-coating method, diffused sheet resistance 80ohm/sq；
P-type polysilicon piece is polished in sodium hydroxide solution, handles 5min；
Rena is carried out to the p-type polysilicon piece after above-mentioned diffusion and removes backplane；
The back side of p-type polysilicon piece after oxidation is sequentially depositing alumina layer, silicon nitride film, in front cvd nitride
Silicon antireflection film；
Back side local openings are carried out using laser, using the positive back metal slurry of silk-screen printing and sinter afterwards.
The PERC solar cells that 200 embodiments 1 are prepared with comparative example 1 are randomly choosed respectively, carry out yields
Contrast, obtains Fig. 1.From figure 1 it appears that the number for the PERC solar cells that embodiment 1 is prepared with comparative example 1 is equal
Change with battery efficiency is in normal distribution.First, when the efficiency of PERC solar cells is less than 19%, with the PERC sun
Can battery efficiency from low to high, the number of PERC solar cells prepared by two methods is also from less to more.When the PERC sun
When the efficiency of energy battery reaches 19%, the number of PERC solar cells prepared by two methods is most.When PERC solar energy
The efficiency of battery is more than after 19%, and the number of PERC solar cells prepared by two methods is reduced therewith.
When the efficiency of PERC solar cells is equal to 19%, PERC solar energy that embodiment 1 and comparative example 1 are prepared
The number of battery is most.At this time, qualified number is 120 in 200 PERC solar cells that embodiment 1 is prepared.And
Qualified number is only 100 in 200 PERC solar cells that comparative example 1 is prepared, and is prepared than embodiment 1
The number of PERC solar cells has lacked 20.
And when the efficiency of PERC solar cells is more than 19%, such as in figure 19.1% and 19.2%, the PERC of embodiment 1
The number for the PERC solar cells that the preparation method of solar cell obtains is all higher than the PERC solar cells of comparative example 1
The number for the PERC solar cells that preparation method obtains.
Therefore, test result shows, when the efficiency of PERC solar cells is equal to or more than 19%, embodiment 1
The yields for the PERC solar cells that the preparation method of PERC solar cells obtains is higher than the PERC solar-electricities of comparative example 1
The yields for the PERC solar cells that the preparation method in pond obtains.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the present invention, its description is more specific and detailed, but simultaneously
Cannot therefore it be construed as limiting the scope of the patent.It should be pointed out that come for those of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (8)
1. a kind of preparation method of PERC solar cells, it is characterised in that include the following steps：
Carry out twin polishing, making herbs into wool, diffusion, etching and decontamination glass, permanganic acid oxidation successively to silicon chip；
The back side is sequentially depositing passivation layer and protective layer；
Front deposition antireflection layer；
Back side local openings, the positive back metal slurry of printing and sintering, obtain PERC solar cells；
In the permanganic acid oxidation step, the time of oxidation is 5min~30min, and the temperature of oxidation is 50 DEG C~80 DEG C；Gao Meng
The volume fraction of acid is 50%~80%.
2. the preparation method of PERC solar cells according to claim 1, it is characterised in that the double-side polishing step
In, twin polishing is carried out using inorganic alkali solution, single-sided polishing Reducing thickness is 5 μm~15 μm.
3. the preparation method of PERC solar cells according to claim 1, it is characterised in that in the making herbs into wool step,
Using plasma etching matte.
4. the preparation method of PERC solar cells according to claim 1, it is characterised in that in the diffusing step,
It is diffused using spin-coating method, diffused sheet resistance is 70ohm/sq~100ohm/sq.
5. the preparation method of PERC solar cells according to claim 1, it is characterised in that the passivation layer is oxidation
Aluminium lamination or silicon oxide layer, the protective layer are silicon nitride film, and the antireflection layer is silicon nitride antireflection film.
6. the preparation method of PERC solar cells according to claim 5, it is characterised in that the thickness of the passivation layer
For 5nm~40nm.
7. the preparation method of PERC solar cells according to claim 1, it is characterised in that the silicon chip is more for p-type
Crystal silicon.
8. a kind of PERC solar cells, it is characterised in that the PERC solar cells are according to any in claim 1~7
The preparation method of PERC solar cells described in is prepared.
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| CN105845778A (en) * | 2016-05-19 | 2016-08-10 | 晋能清洁能源科技有限公司 | Crystalline silicon PERC cell alkali polishing method not influencing front surface |
| CN106449870A (en) * | 2016-09-14 | 2017-02-22 | 湖南红太阳光电科技有限公司 | PERC solar cell production line |
| CN107731961B (en) * | 2017-10-23 | 2019-10-01 | 浙江正泰太阳能科技有限公司 | Film plating process, preparation method and the PERC solar battery of PERC solar battery |
| CN108447942B (en) * | 2018-03-09 | 2020-08-21 | 常州时创能源股份有限公司 | Polishing and texturing process of polycrystalline black silicon PERC battery |
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| CN104143590B (en) * | 2014-08-08 | 2017-08-25 | 中国科学院宁波材料技术与工程研究所 | A kind of simple and quick silicon face passivating method |
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| CN103094418A (en) * | 2013-01-24 | 2013-05-08 | 山东力诺太阳能电力股份有限公司 | Solar cell preparation method |
| CN104201150A (en) * | 2014-09-05 | 2014-12-10 | 浙江晶科能源有限公司 | Method for improving PERC (passivated emitter rear contact) battery back slotting contact |
| CN104993019A (en) * | 2015-07-09 | 2015-10-21 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of localized back contact solar cell |
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