CN105489709A - PERC solar cell and preparation method thereof - Google Patents
PERC solar cell and preparation method thereof Download PDFInfo
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- CN105489709A CN105489709A CN201610038035.3A CN201610038035A CN105489709A CN 105489709 A CN105489709 A CN 105489709A CN 201610038035 A CN201610038035 A CN 201610038035A CN 105489709 A CN105489709 A CN 105489709A
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 77
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 77
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 77
- 238000002360 preparation method Methods 0.000 title claims abstract description 41
- 239000010410 layer Substances 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 238000005498 polishing Methods 0.000 claims abstract description 26
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 15
- 230000003647 oxidation Effects 0.000 claims abstract description 15
- 239000011241 protective layer Substances 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000002002 slurry Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 210000002268 wool Anatomy 0.000 claims description 20
- 235000008216 herbs Nutrition 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 238000005202 decontamination Methods 0.000 claims description 10
- 230000003588 decontaminative effect Effects 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 60
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 4
- 241000084978 Rena Species 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention relates to a PERC solar cell and a preparation method thereof. The preparation method of the PERC solar cell comprises the following steps that double-sided polishing, texturing, diffusion, etching, impurity glass removing and permanganate oxidation are performed on a silicon chip in turn; a passivation layer and a protective layer are deposited on the back surface; an antireflection layer is deposited on the front surface; and the local parts of the back surface are provided with openings, printing of front and back surface metal slurry is performing and sintering is performed so that the PERC solar cell is obtained. Compared with the conventional preparation method of the PERC solar cell, double-sided polishing is performed before texturing of the silicon chip so that subsequent texturing is facilitated by the preparation method of the PERC solar cell; meanwhile, the silicon chip of which impurity glass is removed is oxidized before the passivation layer and the protective layer are deposited on the back surface so that the passivation effect can be realized. Junction area recombination can be reduced, open-circuit voltage can be enhanced and product yield rate can be enhanced. Meanwhile, the preparation method of the PERC solar cell is high in the product yield rate based on the conventional process. Besides, the PERC solar cell is prepared according to the preparation method of the PERC solar cell.
Description
Technical field
The present invention relates to area of solar cell, particularly relate to a kind of PERC solar cell and preparation method thereof.
Background technology
Solar cell, also known as photovoltaic cell, be the semiconductor device that a kind of luminous energy by the sun is converted into electric energy, its electricity generating principle is the photovoltaic effect of based semiconductor PN junction.Because it is Green Product, can not cause environmental pollution, and be renewable resource, so under current energy starved situation, solar cell is a kind of novel energy having broad based growth future.
Localized contact back of the body passivation (PERC) solar cell is a kind of high performance solar batteries newly developed, and its transformation efficiency has exceeded the stabilization efficiency of current 19% along with the continuous progress of technology, obtains the extensive concern of industry.Its core covers at the shady face aluminium oxide of silicon chip or silicon oxide film (5nm ~ 100nm), to play passivated surface, to improve the effect of long-wave response, thus promotes the conversion efficiency of battery.
The preparation method of traditional PERC solar cell mainly comprises the steps: making herbs into wool, diffusion, polished backside, etching and decontamination glass, backside deposition aluminium oxide or silicon oxide film, backside deposition silicon nitride film, front deposited silicon nitride antireflection layer, backside openings, the positive back metal slurry of silk screen printing, sintering.But the product yield of the PERC solar cell adopting above-mentioned preparation method to prepare is lower, causes wastage of material, be unfavorable for application.
Summary of the invention
Based on this, be necessary the lower problem of product yield of the PERC solar cell prepared for the preparation method of traditional PERC solar cell, a kind of preparation method that can improve the PERC solar cell of product yield is provided.
A preparation method for PERC solar cell, comprises the steps:
Carry out twin polishing, making herbs into wool, diffusion, etching and decontamination glass, permanganic acid successively to silicon chip to be oxidized;
Backside deposition passivation layer and protective layer;
Front deposition antireflection layer;
Back side local openings, print positive back metal slurry and sintering, obtain PERC solar cell.
Compared with the preparation method of traditional PERC solar cell, in the preparation method of PERC solar cell of the present invention, before silicon wafer wool making, first carry out twin polishing, be convenient to follow-up making herbs into wool; Meanwhile, before deposit passivation layer and protective layer, the silicon chip after decontamination glass is oxidized overleaf, plays passivation.All can reduce interface compound, improve open circuit voltage, can product yield be improved.
Wherein in an embodiment, in described permanganic acid oxidation step, the time of oxidation is 5min ~ 30min, and the temperature of oxidation is 50 DEG C ~ 80 DEG C.
Wherein in an embodiment, in described permanganic acid oxidation step, the volume fraction of permanganic acid is 50% ~ 80%.
Wherein in an embodiment, in described double-side polishing step, adopt inorganic alkali solution to carry out twin polishing, single-sided polishing Reducing thickness is 5 μm ~ 15 μm.
Wherein in an embodiment, in described making herbs into wool step, adopt plasma etching matte.
Wherein in an embodiment, in described diffusing step, adopt spin-coating method to spread, diffused sheet resistance is 70ohm/sq ~ 100ohm/sq.
Wherein in an embodiment, described passivation layer is alumina layer or silicon oxide layer, and described protective layer is silicon nitride film, and described antireflection layer is silicon nitride antireflection film.
Wherein in an embodiment, the thickness of described passivation layer is 5nm ~ 40nm.
Wherein in an embodiment, described silicon chip is P type polysilicon.
In addition, also provide a kind of PERC solar cell, described PERC solar cell is prepared from according to the preparation method of above-mentioned PERC solar cell.
Due in above-mentioned preparation method, before silicon wafer wool making, first carry out twin polishing, be convenient to follow-up making herbs into wool; Meanwhile, before deposit passivation layer and protective layer, the silicon chip after decontamination glass is oxidized overleaf, plays passivation.All can reduce interface compound, improve open circuit voltage.Therefore, the product yield of the PERC solar cell prepared by the preparation method of above-mentioned PERC solar cell is high.
Accompanying drawing explanation
Fig. 1 is the electrical property distribution map of the PERC solar cell that embodiment 1 prepares respectively with comparative example 1.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar improvement when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
Unless otherwise defined, all technology used herein and scientific terminology are identical with belonging to the implication that those skilled in the art of the present invention understand usually.The object of term used in the description of the invention herein just in order to describe specific embodiment, is not intended to be restriction the present invention.Term as used herein " and/or " comprise arbitrary and all combinations of one or more relevant Listed Items.
The preparation method of the PERC solar cell of one execution mode, comprises the steps:
Carry out twin polishing, making herbs into wool, diffusion, etching and decontamination glass, permanganic acid successively to silicon chip to be oxidized;
Backside deposition passivation layer and protective layer;
Front deposition antireflection layer;
Back side local openings, print positive back metal slurry and sintering, obtain PERC solar cell.
Wherein, silicon chip is preferably P type polysilicon, and namely the preparation method of PERC solar cell of the present invention is applicable to the solar cell that P type polysilicon chip makes.
In double-side polishing step, inorganic alkali solution is preferably adopted to carry out twin polishing.Such as, adopting sodium hydroxide solution, but be not limited thereto, can also be other inorganic alkali solutions.Single-sided polishing Reducing thickness after polishing is 5 μm ~ 15 μm.The processing time of silicon chip being carried out to twin polishing is 2min ~ 10min.The present invention first carries out twin polishing to silicon chip, is convenient to follow-up making herbs into wool.
In making herbs into wool step, adopt dry etching or wet etching.Dry etching (also claiming plasma etching) is that silicon chip surface is exposed to the plasma produced in air, and plasma by the window outputed in photoresist and silicon chip generation physics or chemical reaction, thus removes the surfacing of exposure.Wet etching is the material adopting liquid chemical reagent chemically to remove silicon chip surface.Preferential employing plasma etching matte in present embodiment.Form nanometer-scale texture at silicon chip surface after etching, light reflection can be reduced.
In diffusing step, preferably adopt spin-coating method to spread, diffused sheet resistance is 70ohm/sq ~ 100ohm/sq.The object of diffusion forms PN junction.
Etching and decontamination glass, impurity glass, also known as PSG, can adopt Rena to go the mode of PSG.
In permanganic acid oxidation step, the volume fraction of permanganic acid solution is 50% ~ 80%.The time of oxidation is 5min ~ 30min, and the temperature of oxidation is 50 DEG C ~ 80 DEG C.Therefore, the present invention does not need the process of high-temperature oxydation, and avoid the destruction of high temperature to PERC solar cell surface, the product yield obtained is high, is conducive to application.Adopt permanganic acid to be oxidized to the silicon chip after decontamination glass, play passivation, interface compound can be reduced, improve open circuit voltage, also can improve product yield.
The backside deposition passivation layer of silicon chip after oxidation and protective layer afterwards.Wherein, passivation layer is preferably alumina layer or silicon oxide layer, and in a preferred embodiment, the thickness of alumina layer or silicon oxide layer is 5nm ~ 40nm.Protective layer is silicon nitride film.
Deposit the front deposition antireflection layer of the silicon chip of passivation layer and protective layer afterwards overleaf.Antireflection layer is preferably silicon nitride antireflection film.PECAD deposited silicon nitride antireflection film can be adopted.
Utilize laser to carry out back side local openings, adopt the positive back metal slurry of silk screen printing and sinter afterwards, PERC solar cell can be obtained.
Compared with the preparation method of traditional PERC solar cell, in the preparation method of PERC solar cell of the present invention, before silicon wafer wool making, first carry out twin polishing, be convenient to follow-up making herbs into wool; Meanwhile, before deposit passivation layer and protective layer, the silicon chip after decontamination glass is oxidized overleaf, plays passivation.All can reduce interface compound, improve open circuit voltage, can product yield be improved.
In addition, in the preparation method of PERC solar cell of the present invention, technological process is simple, based on the process equipment of routine, and without any needing the process of high-temperature oxydation, the destruction of high temperature to PERC solar cell surface can be avoided, the product yield obtained is high, is conducive to application.
The present invention also provides a kind of PERC solar cell, and the preparation method according to above-mentioned PERC solar cell is prepared from.Due in above-mentioned preparation method, before silicon wafer wool making, first carry out twin polishing, be convenient to follow-up making herbs into wool; Meanwhile, before deposit passivation layer and protective layer, the silicon chip after decontamination glass is oxidized overleaf, plays passivation.All can reduce interface compound, improve open circuit voltage.Therefore, the product yield of the PERC solar cell prepared by the preparation method of above-mentioned PERC solar cell is high.
Below in conjunction with specific embodiment, the present invention is further detailed.
Embodiment 1
In sodium hydroxide solution, carry out twin polishing to P type polysilicon chip, process 5min, the single-sided polishing Reducing thickness now after polishing is 10 μm;
Plasma etching is adopted to carry out making herbs into wool to the P type polysilicon chip after above-mentioned polishing;
Adopt spin-coating method to spread the P type polysilicon chip after above-mentioned making herbs into wool, diffused sheet resistance is 80ohm/sq;
Rena is carried out to the P type polysilicon chip after above-mentioned diffusion and removes backplane;
Go the P type polysilicon chip after backplane to put into the permanganic acid solution that volume fraction is 70% by above-mentioned, 75 DEG C time, maintain 15min, obtain the P type polysilicon chip after being oxidized;
Back side aluminum oxide layer, the silicon nitride film successively of P type polysilicon chip after oxidation, at front deposited silicon nitride antireflection film, wherein, the thickness of alumina layer is 25nm;
Laser is utilized to carry out back side local openings, adopt the positive back metal slurry of silk screen printing and sinter afterwards.
Comparative example 1
Plasma etching matte is adopted to carry out making herbs into wool to P type polysilicon chip;
Adopt spin-coating method to spread the P type polysilicon chip after above-mentioned making herbs into wool, diffused sheet resistance is 80ohm/sq;
In sodium hydroxide solution, polishing is carried out to P type polysilicon chip, process 5min;
Rena is carried out to the P type polysilicon chip after above-mentioned diffusion and removes backplane;
Back side aluminum oxide layer, the silicon nitride film successively of P type polysilicon chip after oxidation, at front deposited silicon nitride antireflection film;
Laser is utilized to carry out back side local openings, adopt the positive back metal slurry of silk screen printing and sinter afterwards.
The PERC solar cell for preparing of Stochastic choice 200 embodiments 1 and comparative example 1, carries out yields contrast, obtains Fig. 1 respectively.As can be seen from Figure 1, the number of PERC solar cell for preparing of embodiment 1 and comparative example 1 is all normal distribution with the change of battery efficiency.First, when the efficiency of PERC solar cell is less than 19%, along with PERC solar cell efficiency from low to high, the number of PERC solar cell prepared by two kinds of methods is also from less to more.When the efficiency of PERC solar cell reaches 19%, the number of PERC solar cell prepared by two kinds of methods is all maximum.When the efficiency of PERC solar cell is greater than after 19%, the number of PERC solar cell prepared by two kinds of methods reduces all thereupon.
When the efficiency of PERC solar cell equals 19%, the number of the PERC solar cell that embodiment 1 and comparative example 1 prepare is maximum.Now, in 200 PERC solar cells preparing of embodiment 1, qualified number is 120.And qualified number is only 100 in 200 PERC solar cells that comparative example 1 prepares, the number of the PERC solar cell prepared than embodiment 1 is few 20.
And when the efficiency of PERC solar cell is greater than 19%, as in figure 19.1% and 19.2%, the number of the PERC solar cell that the preparation method that the number of the PERC solar cell that the preparation method of the PERC solar cell of embodiment 1 obtains all is greater than the PERC solar cell of comparative example 1 obtains.
Therefore, test result shows, when the efficiency of PERC solar cell is equal to or greater than 19%, the yields of the PERC solar cell that the yields of the PERC solar cell that the preparation method of the PERC solar cell of embodiment 1 obtains obtains higher than the preparation method of the PERC solar cell of comparative example 1.
Each technical characteristic of the above embodiment can combine arbitrarily, for making description succinct, the all possible combination of each technical characteristic in above-described embodiment is not all described, but, as long as the combination of these technical characteristics does not exist contradiction, be all considered to be the scope that this specification is recorded.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be construed as limiting the scope of the patent.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a preparation method for PERC solar cell, is characterized in that, comprises the steps:
Carry out twin polishing, making herbs into wool, diffusion, etching and decontamination glass, permanganic acid successively to silicon chip to be oxidized;
Backside deposition passivation layer and protective layer;
Front deposition antireflection layer;
Back side local openings, print positive back metal slurry and sintering, obtain PERC solar cell.
2. the preparation method of PERC solar cell according to claim 1, is characterized in that, in described permanganic acid oxidation step, the time of oxidation is 5min ~ 30min, and the temperature of oxidation is 50 DEG C ~ 80 DEG C.
3. the preparation method of PERC solar cell according to claim 1, is characterized in that, in described permanganic acid oxidation step, the volume fraction of permanganic acid is 50% ~ 80%.
4. the preparation method of PERC solar cell according to claim 1, is characterized in that, in described double-side polishing step, adopt inorganic alkali solution to carry out twin polishing, single-sided polishing Reducing thickness is 5 μm ~ 15 μm.
5. the preparation method of PERC solar cell according to claim 1, is characterized in that, in described making herbs into wool step, adopts plasma etching matte.
6. the preparation method of PERC solar cell according to claim 1, is characterized in that, in described diffusing step, adopt spin-coating method to spread, diffused sheet resistance is 70ohm/sq ~ 100ohm/sq.
7. the preparation method of PERC solar cell according to claim 1, is characterized in that, described passivation layer is alumina layer or silicon oxide layer, and described protective layer is silicon nitride film, and described antireflection layer is silicon nitride antireflection film.
8. the preparation method of PERC solar cell according to claim 7, is characterized in that, the thickness of described passivation layer is 5nm ~ 40nm.
9. the preparation method of PERC solar cell according to claim 1, is characterized in that, described silicon chip is P type polysilicon.
10. a PERC solar cell, is characterized in that, the preparation method of the PERC solar cell of described PERC solar cell according to any one of claim 1 ~ 9 is prepared from.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845778A (en) * | 2016-05-19 | 2016-08-10 | 晋能清洁能源科技有限公司 | Crystalline silicon PERC cell alkali polishing method not influencing front surface |
| CN106449870A (en) * | 2016-09-14 | 2017-02-22 | 湖南红太阳光电科技有限公司 | PERC solar cell production line |
| CN107731961A (en) * | 2017-10-23 | 2018-02-23 | 浙江正泰太阳能科技有限公司 | Film plating process, preparation method and the PERC solar cells of PERC solar cells |
| CN108447942A (en) * | 2018-03-09 | 2018-08-24 | 常州时创能源科技有限公司 | The polishing process for etching of the black silicon PERC batteries of polycrystalline |
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| CN105845778A (en) * | 2016-05-19 | 2016-08-10 | 晋能清洁能源科技有限公司 | Crystalline silicon PERC cell alkali polishing method not influencing front surface |
| CN106449870A (en) * | 2016-09-14 | 2017-02-22 | 湖南红太阳光电科技有限公司 | PERC solar cell production line |
| CN107731961A (en) * | 2017-10-23 | 2018-02-23 | 浙江正泰太阳能科技有限公司 | Film plating process, preparation method and the PERC solar cells of PERC solar cells |
| CN107731961B (en) * | 2017-10-23 | 2019-10-01 | 浙江正泰太阳能科技有限公司 | Film plating process, preparation method and the PERC solar battery of PERC solar battery |
| CN108447942A (en) * | 2018-03-09 | 2018-08-24 | 常州时创能源科技有限公司 | The polishing process for etching of the black silicon PERC batteries of polycrystalline |
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