CN109244149A - PECVD back film layer structure based on PERC single crystal battery and preparation method - Google Patents
PECVD back film layer structure based on PERC single crystal battery and preparation method Download PDFInfo
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- CN109244149A CN109244149A CN201811048223.XA CN201811048223A CN109244149A CN 109244149 A CN109244149 A CN 109244149A CN 201811048223 A CN201811048223 A CN 201811048223A CN 109244149 A CN109244149 A CN 109244149A
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 28
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 28
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 28
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 62
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 10
- 238000002161 passivation Methods 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000002310 reflectometry Methods 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 59
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a PECVD back film layer structure based on a PERC single crystal battery, which comprises a PERC battery, wherein the thickness of a first silicon nitride film is 8 +/-2 nm, and the refractive index is 2.6 +/-0.1; the thickness of the second layer of silicon nitride film is 15 +/-3 nm, and the refractive index is 2.5 +/-0.1; the thickness of the third silicon nitride film is 20 +/-3 nm, and the refractive index is 2.3 +/-0.1; the thickness of the fourth silicon nitride film is 30 +/-5 nm, and the refractive index is 2.2 +/-0.1; the thickness of the fifth layer silicon nitride film is 50 +/-5 nm, and the refractive index is 2.0 +/-0.1. The invention is beneficial to the effects of back contact and surface passivation, improves the open-circuit voltage, forms a gradient mirror surface on the back, increases the internal reflection of long waves, enhances the reflectivity of the back, prolongs the minority carrier lifetime of the battery, increases the short-circuit current, thereby improving the photoelectric conversion efficiency and being very worthy of popularization.
Description
Technical field
The present invention relates to battery coating technique fields, specially a kind of to be based on the back side PERC single crystal battery PECVD film layer knot
Structure and preparation method.
Background technique
With the increasingly depleted of conventional energy resource, in current sustainable energy, solar energy is undoubtedly a kind of most general
All over, most cleaning and most potential alternative energy source, the development and utilization of solar energy seem increasingly important, device of solar generating is also known as
For photovoltaic cell or solar battery, electricity generating principle is the photovoltaic effect based on semiconductor PN, can be by solar energy
It is directly changed into battery.Conventional batteries are limited by material, technique, equipment etc. at present, and improved efficiency is own without too large space, based on too
It is positive can battery cost efficiency, realize cheap internet access, a kind of final real new energy as scale application.
Carrying on the back passivation (PERC) solar battery due to localized contact is overleaf, to have well with other battery-efficient technologies
Compatibility, so PERC battery is a kind of relatively more extensive high performance solar batteries of current application, using and development prospect it is wide
Wealthy, PREC battery core is back side aluminium oxide and the silicon nitride covering in silicon wafer, since deposition of aluminium oxide passivation layer is relatively thin, need
Will deposited silicon nitride is on this film to play a protective role while enhance the reflectivity at the back side, to play passivated surface, improve length
The effect of wave response, so as to improve ISC/UOC, to promote the transfer efficiency of battery.Routine notacoria deposited silicon nitride is equal at present
Mostly single layer membrane process, raising reflectivity amplitude is smaller, and final performance transfer efficiency gain is unobvious.
The content of silicon increases in silicon nitride film layer, and refractive index and extinction coefficient accordingly increase, and silicon nitride is to light therewith
Absorption will enhance, so the film of high refractive index, high extinction coefficient is not suitable as antireflective film, but correspondingly increase silicon
Enhancing trend is presented in content, surface passivation effect, and it is synchronous with high backside reflection that monofilm at this stage is unable to reach surface passivation
High request.
Summary of the invention
The purpose of the present invention is to provide one kind to be based on PERC single crystal battery PECVD back side film layer structure and preparation side
Method, to solve the problems mentioned in the above background technology.
To achieve the above object, the invention provides the following technical scheme:
One kind being based on the back side PERC single crystal battery PECVD film layer structure, including PERC battery, the back side of the PERC battery
It is deposited with pellumina, the pellumina has been sequentially depositing first layer silicon nitride film, second layer nitrogen far from PERC battery side
SiClx film, third layer silicon nitride film, the 4th layer of silicon nitride film and layer 5 silicon nitride film；
The first layer silicon nitride film is 2.6 ± 0.1 with a thickness of 8 ± 2nm, refractive index；
The second layer silicon nitride film is 2.5 ± 0.1 with a thickness of 15 ± 3nm, refractive index；
The third layer silicon nitride film is 2.3 ± 0.1 with a thickness of 20 ± 3nm, refractive index；
The 4th layer of silicon nitride film is 2.2 ± 0.1 with a thickness of 30 ± 5nm, refractive index；
The layer 5 silicon nitride film is 2.0 ± 0.1 with a thickness of 50 ± 5nm, refractive index.
Preferably, the aluminum oxide film thickness is 4.25 ± 0.75nm.
A kind of preparation method, for being based on the back side PERC single crystal battery PECVD film layer structure, comprising the following steps:
A: PECVD or ALD method deposited oxide aluminium film are used in PERC cell backside；
B: being deposited with five layers of back side silicon nitride in one-time continuous deposition process using PECVD on pellumina,
And five layers of silicon nitride film outside-in refractive index are sequentially increased, film layer is thinning.
Compared with prior art, the beneficial effects of the present invention are:
Back side film layer structure of the invention and preparation method, the reflected light that former and later two surfaces of film layer can be made to generate are mutual
Reflected light is offset in interference, achievees the effect that antireflective, increases the absorption to sunlight, improves photogenerated current density, back side shape
The internal reflection that long wave is increased at the refractive index of gradient difference film layer is collected the minority carrier of battery and is increased, increases short
Road electric current, while it is conducive to passivation and rear-face contact, improves the minority carrier life time and open-circuit voltage of battery, manufactured PERC
The more conventional notacoria technique battery of battery efficiency is high by 0.05% or so, and effect promoting is significant.
Five layers of silicon nitride anti-reflecting film layer of the invention can be preferably passivated by constantly reducing refractive index from inside to outside
Solar cell back surface and reduction back surface reflectivity can preferably integrate anti-reflective effect and the body surface face of silicon nitride film layer
The silicon nitride film of passivation effect, higher bottom refractive index has better body surface passivation effect, can be further improved
The open-circuit voltage of solar cell, five layers of silicon nitride film layer that refractive index gradually decreases can preferably improve solar cell long wavelength part
Reflectivity, improve the short circuit current of solar cell.
The present invention is conducive to rear-face contact and body surface passivation effect, improves open-circuit voltage, while the back side forms gradient mirror
Face increases the internal reflection of long wave, enhances the reflectivity at the back side, improves the minority carrier life time of battery, increases short circuit current, from
And photoelectric conversion efficiency is promoted, highly promote.
Detailed description of the invention
Fig. 1 is the back side film schematic diagram of a layer structure of cell piece of the present invention.
In figure: 1PERC battery, 2 pelluminas, 3 first layer silicon nitride films, 4 second layer silicon nitride films, the nitridation of 5 third layer
Silicon fiml, 6 the 4th layers of silicon nitride film, 7 layer 5 silicon nitride film.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 1, the present invention provides a kind of technical solution:
One kind being based on the back side PERC single crystal battery PECVD film layer structure, including PERC battery 1, and the back side of PERC battery 1 is heavy
Product has pellumina 2, and pellumina 2 is sequentially depositing with a thickness of 4.25 ± 0.75nm, pellumina 2 far from 1 side of PERC battery
There are first layer silicon nitride film 3, second layer silicon nitride film 4, third layer silicon nitride film 5, the 4th layer of silicon nitride film 6 and layer 5 nitrogen
SiClx film 7.
First layer silicon nitride film 3 is 2.6 ± 0.1 with a thickness of 8 ± 2nm, refractive index；
Second layer silicon nitride film 4 is 2.5 ± 0.1 with a thickness of 15 ± 3nm, refractive index；
Third layer silicon nitride film 5 is 2.3 ± 0.1 with a thickness of 20 ± 3nm, refractive index；
4th layer of silicon nitride film 6 is 2.2 ± 0.1 with a thickness of 30 ± 5nm, refractive index；
Layer 5 silicon nitride film 7 is 2.0 ± 0.1 with a thickness of 50 ± 5nm, refractive index.
A kind of preparation method, for being based on the back side PERC single crystal battery PECVD film layer structure, comprising the following steps:
A: PECVD or ALD method deposited oxide aluminium film 2 are used at 1 back side of PERC battery；
B: five layers of back side silicon nitride silicon are deposited in one-time continuous deposition process using PECVD on pellumina 2
Film, and five layers of silicon nitride film outside-in refractive index are sequentially increased, film layer is thinning.
Specific preparation process:
The present embodiment chooses p type single crystal silicon, the technique system of PREC single crystal battery PECVD five layers of silicon nitride film of backside deposition
Standby process:
1, making herbs into wool processing is carried out to monocrystalline silicon piece, forms pyramid flannelette；
2, diffusion is for PN junction；
3, polished backside, etch, remove phosphorosilicate glass；
4, it anneals；
5, back side ALD prepares aluminium oxide, and pellumina 2 is with a thickness of 5nm；
6, back side PECVD deposit five layers of silicon nitride film, the raw material that five layer deposition silicon nitride of the back side uses be NH3 and
SIH4, by adjusting the refractive index that NH3 with SIH4 flowrate proportioning control each layer of five tunics is different in production method；
Five layers of silicon nitride film preparation parameter are as follows:
First layer silicon nitride film 3 with a thickness of 9nm, refractive index 2.6；
Second layer silicon nitride film 4 with a thickness of 15nm, refractive index 2.5；
Third layer silicon nitride film 5 with a thickness of 20nm, refractive index 2.3；
4th layer of silicon nitride film 6 with a thickness of 30nm, refractive index 2.2；
Layer 5 silicon nitride film 7 with a thickness of 50nm, refractive index 2.0；
7, positive film PECVD deposited silicon nitride antireflective coating；
8, backside laser differential trench open；
9, silk-screen printing forms back electrode, back electric field, positive electrode；
10, sintering makes metal and silicon form good Ohmic contact；
11, the electrical property of battery is tested.
Photoelectric conversion efficiency comparative experiments:
By conventional photo transfer efficiency test method, to back side PECVD common process battery and new process of the invention
Efficiency test experiment is carried out, the experimental data are shown in the following table shown in 1:
Table 1
| Technique | Uoc(V) | Isc(mA) | FF | Eta (%) |
| It is conventional | 0.6666 | 9.766 | 81.55 | 21.732% |
| New process of the present invention | 0.6684 | 9.770 | 81.46 | 21.771% |
It can be obtained according to upper 1 experimental data of table, the photoelectric conversion efficiency of new process of the present invention is compared to common process, the present invention
New process photoelectric conversion efficiency improves 4mA than common process, short circuit current, opens pressure and improves 1.8mV, battery conversion efficiency improves
0.039%, back passivation effect is obvious, is significantly improved, highly promotes.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (3)
1. one kind is based on the back side PERC single crystal battery PECVD film layer structure, including PERC battery (1), the PERC battery (1)
Backside deposition has pellumina (2), it is characterised in that: the pellumina (2) has been sequentially depositing far from PERC battery (1) side
First layer silicon nitride film (3), second layer silicon nitride film (4), third layer silicon nitride film (5), the 4th layer of silicon nitride film (6) and
Five layers of silicon nitride film (7)；
The first layer silicon nitride film (3) is 2.6 ± 0.1 with a thickness of 8 ± 2nm, refractive index；
The second layer silicon nitride film (4) is 2.5 ± 0.1 with a thickness of 15 ± 3nm, refractive index；
The third layer silicon nitride film (5) is 2.3 ± 0.1 with a thickness of 20 ± 3nm, refractive index；
The 4th layer of silicon nitride film (6) is 2.2 ± 0.1 with a thickness of 30 ± 5nm, refractive index；
The layer 5 silicon nitride film (7) is 2.0 ± 0.1 with a thickness of 50 ± 5nm, refractive index.
2. according to claim 1 a kind of based on the back side PERC single crystal battery PECVD film layer structure, it is characterised in that: institute
Pellumina (2) is stated with a thickness of 4.25 ± 0.75nm.
3. a kind of preparation method, be used to prepare it is described in claim 1 based on the back side PERC single crystal battery PECVD film layer structure,
Characterized by comprising the following steps:
A: PECVD or ALD method deposited oxide aluminium film (2) are used at PERC battery (1) back side；
B: being deposited with five layers of back side silicon nitride in one-time continuous deposition process using PECVD on pellumina (2),
And five layers of silicon nitride film outside-in refractive index are sequentially increased, film layer is thinning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811048223.XA CN109244149A (en) | 2018-09-10 | 2018-09-10 | PECVD back film layer structure based on PERC single crystal battery and preparation method |
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| CN201811048223.XA CN109244149A (en) | 2018-09-10 | 2018-09-10 | PECVD back film layer structure based on PERC single crystal battery and preparation method |
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| CN201811048223.XA Withdrawn CN109244149A (en) | 2018-09-10 | 2018-09-10 | PECVD back film layer structure based on PERC single crystal battery and preparation method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830570A (en) * | 2019-02-22 | 2019-05-31 | 河南林鑫新能源科技有限公司 | A kind of passivation film and preparation method thereof |
| CN110534590A (en) * | 2019-08-16 | 2019-12-03 | 上海交通大学 | A kind of silicon nitride film and preparation method thereof improving solar cell long-wave response |
| CN110943146A (en) * | 2019-12-16 | 2020-03-31 | 通威太阳能（安徽）有限公司 | Film coating method and manufacturing method of PERC solar cell and PERC solar cell |
| US20230071754A1 (en) * | 2021-09-06 | 2023-03-09 | Shanghai Jinko Green Energy Enterprise Management Co., Ltd. | Solar cell, method for manufacturing the same, and photovoltaic module |
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| CN108110066A (en) * | 2018-02-05 | 2018-06-01 | 通威太阳能（安徽）有限公司 | A kind of front film layer structure and preparation method for promoting PERC battery conversion efficiencies |
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| CN106449783A (en) * | 2016-10-28 | 2017-02-22 | 无锡尚德太阳能电力有限公司 | Polycrystalline silicon solar cell efficient multi-layer anti-reflective film and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109830570A (en) * | 2019-02-22 | 2019-05-31 | 河南林鑫新能源科技有限公司 | A kind of passivation film and preparation method thereof |
| CN110534590A (en) * | 2019-08-16 | 2019-12-03 | 上海交通大学 | A kind of silicon nitride film and preparation method thereof improving solar cell long-wave response |
| CN110943146A (en) * | 2019-12-16 | 2020-03-31 | 通威太阳能（安徽）有限公司 | Film coating method and manufacturing method of PERC solar cell and PERC solar cell |
| US20230071754A1 (en) * | 2021-09-06 | 2023-03-09 | Shanghai Jinko Green Energy Enterprise Management Co., Ltd. | Solar cell, method for manufacturing the same, and photovoltaic module |
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